CN106340574B - GaAs base LED chip and preparation method with roughening current extending - Google Patents
GaAs base LED chip and preparation method with roughening current extending Download PDFInfo
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- CN106340574B CN106340574B CN201610949920.7A CN201610949920A CN106340574B CN 106340574 B CN106340574 B CN 106340574B CN 201610949920 A CN201610949920 A CN 201610949920A CN 106340574 B CN106340574 B CN 106340574B
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- 238000007788 roughening Methods 0.000 title claims abstract description 59
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 54
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000010408 film Substances 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 8
- 239000003292 glue Substances 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 2
- 238000000605 extraction Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 9
- 239000010931 gold Substances 0.000 description 7
- 230000005611 electricity Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000006424 Flood reaction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- -1 not mercurous Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
A kind of GaAs base LED chip and preparation method thereof with roughening current extending, the GaAs base LED chip includes N electrode, GaAs substrate and epitaxial layer, it is provided with current extending on epitaxial layer, p-electrode is provided on current extending, the current extending of p-electrode periphery is roughening current extending；Preparation step includes: (1) grown epitaxial layer on gaas substrates；(2) negative photoresist is applied in epi-layer surface, is roughened figure by being lithographically derived negative photoresist；(3) current extending is grown on entire negative photoresist surface；(4) by removing negative photoresist, roughening current extending is obtained；(5) negative photoresist electrode pattern is prepared on roughening current extending；(6) p-electrode is prepared on negative photoresist electrode pattern；(7) to GaAs substrate thinning and growth N electrode.Unstability caused by being directly roughened the invention avoids the epitaxial layer in the prior art to GaAs base LED chip, improves light extraction efficiency.
Description
Technical field
The present invention relates to a kind of GaAs base LED (light emitting diode) chips and preparation method thereof, belong to photoelectron technology neck
Domain.
Background technique
Illumination new light sources of the LED as 21 century, under same brightness, semiconductor lamp power consumption is only the l/ of ordinary incandescent lamp
10, and the service life can extend 100 times.LED component is cold light source, and light efficiency is high, and operating voltage is low, and power consumption is small, small in size, can
Planar package is easy to develop light and thin type product, and the firm in structure and service life is very long, the harmful substances such as not mercurous, lead of light source itself, nothing
Infrared and ultraviolet pollution will not be generated in production and use to extraneous pollution.Therefore, semiconductor lamp have energy-saving and environmental protection,
The features such as service life is long, as transistor substitutes electron tube, semiconductor lamp substitutes traditional incandescent lamp and fluorescent lamp, also will be
Trend of the times.No matter from the angle saved electric energy, reduce greenhouse gas emission, or from the angle to reduce environmental pollution, LED makees
All there is the very high potential of substitution conventional illumination sources for novel illumination light source.
The fifties in last century is that many of representative well-known grind in IBM Thomas J.Watson Research Center
Under the effort for studying carefully mechanism, emerge rapidly by III-V race's semiconductor of representative of GaAs in semiconductor light emitting field.Later with gold
The appearance of organic chemical vapor deposition (MOCVD) technology of category, so that the growth of the III-V race semiconductor of high quality breaches skill
The semiconductor light emitting diode device of art barrier, various wavelength floods the market in succession.Due to semiconductor light-emitting-diode relative to
Current luminescent device has the speciality such as high-efficient, service life long, anti-strength impact, is worldwide counted as photograph of new generation
Funerary objects part.But since the refractive index of III-V race semiconductor is generally higher (GaP:3.2), this results in the light emitting region of LED to send out
Light out is limited by interface total reflection phenomenon when being emitted in air through chip surface, and only extremely least a portion of light can be emitted
To device exterior (GaP is about 2.4%).Interface total reflection phenomenon causes the external quantum efficiency of LED low, is to restrict LED substitution
The main reason for existing illuminating device.
How GaAs base LED chip increases light extraction efficiency as main R&D direction at this stage, if by extension
Layer is roughened, general to be realized by chemical attack, and chemical attack has that etch pattern is unstable, produces lower meeting in batches
Generate fluctuation；If using ICP etch rule constrained devices, how can effectively improving extraction efficiency and can not influence electrode and
Epitaxial layer becomes the Main way studied at this stage.
" the AlGaInP base LED of GaP roughing in surface and its manufacturer disclosed in Chinese patent literature CN 105428485A
Method " it is directly to immerse epitaxial wafer in coarsening solution, make exposed p-type GaP Window layer roughing in surface, reaches wet etching roughening
The effect of p-type GaP window layer surface；Ito film is deposited as current extending.The method is mainly thick to carrying out on epitaxial layer
Change, for the more demanding of epitaxial growth and epi-layer surface, is not easy large-scale production.
Major part GaAs base LED chip is roughened to epitaxial layer at this stage, and epitaxial layer roughening is more demanding and not
Easily form preferable shooting angle.
Summary of the invention
For the problem to be improved of light extraction efficiency existing for existing GaAs base LED chip, the present invention provides a kind of light out
High-efficient has the GaAs base LED chip of roughening current extending, while providing a kind of preparation of above-mentioned GaAs base LED chip
Method, the preparation method simple flow largely promote current expansion and light efficiency.
The GaAs base LED chip with roughening current extending of the invention, using following technical scheme:
The GaAs base LED chip, including N electrode, GaAs substrate and epitaxial layer, N electrode, GaAs substrate and epitaxial layer are under
It is supreme to set gradually, it is provided with current extending on epitaxial layer, p-electrode, the electric current of p-electrode periphery are provided on current extending
Extension layer is roughening current extending.
Above-mentioned GaAs base LED chip below p-electrode by being arranged the current extending not being roughened, and to p-electrode periphery
Current extending roughening, extend electric current preferably by current extending below p-electrode, by p-electrode periphery electric current
The roughening of extension layer changes the shooting angle of light, improves light extraction efficiency, improves the quality of GaAs based light-emitting diode.
The preparation method of the above-mentioned GaAs base LED chip with roughening current extending, comprising the following steps:
(1) grown epitaxial layer on gaas substrates；
(2) negative photoresist is applied in epi-layer surface, the region for the p-electrode of being prepared is reserved on negative photoresist,
Remaining region is roughened figure by being lithographically derived negative photoresist；
(3) (including the region for being roughened with not being roughened), surface growth is electric on the entire negative photoresist that step (2) is applied
Flow extension layer；
(4) by removing negative photoresist, roughening current extending is obtained in negative photoresist roughening graphics field, at it
Its region is not roughened current extending, and is annealed to roughening current extending；
(5) negative photoresist electrode pattern is prepared (because negative photoresist characteristic is by electrode on roughening current extending
The removal of region negative photoresist, thus negative photo glue pattern is prepared on roughening current extending and final electrode is prepared on not
Above the current extending of roughening)；
(6) p-electrode is prepared on negative photoresist electrode pattern；
(7) to GaAs substrate thinning and growth N electrode.
Negative photoresist applies with a thickness of 2-3 μm in the step (2).
The step (3) is to deposit one layer on negative photoresist roughening patterned surface under the conditions of 100-150 DEG C of temperature
ITO (tin indium oxide, transparent conductive material) film forms current extending.The ito thin film with a thickness of 0.1-0.25 μm.
Annealing in the step (4) is carried out at 380-450 DEG C.
The step (5) is to coat the negative photoresist with a thickness of 3-4 μm in roughening current expansion layer surface, passes through photoetching
Obtain electrode pattern, electrode pattern just be not roughened current extending and be overlapped.
Preparing p-electrode in the step (6) on negative photo glue pattern, specific step is as follows:
1. plating a layer thickness in negative photo glue pattern upper surface is 0.05-0.1 μm of Cr film and 1.5-2.5 μm of Au
Film；
2. by outside p-electrode Cr film and Au film stripping fall, obtain p-electrode.
In the step (7), to GaAs substrate thinning and growth N electrode specific step is as follows:
1. to GaAs substrate thinning to a thickness of 150-220 μm；
2. 0.3-0.5 μm of growth thickness of GaAs substrate back of the Au film after being thinned is as N electrode.
The present invention is avoided in the prior art by setting roughening current extending to the epitaxial layer of GaAs base LED chip
Unstability caused by being directly roughened, and the roughening current expansion layer pattern prepared in such a way that negtive photoresist is removed is more steady
It is fixed, light extraction efficiency is improved, avoids and corrosive liquid in electrode process is prepared to roughening current extending using conventional corrosion method
Corrosion and to roughening face ring, the method that electrode is prepared by negative photoresist removing, avoid to roughening current extending
Damage and electrode pattern be easier to bonding wire.
It is roughened current extending preparation process in the present invention and uses negative photoresist, is shelled using the simplest negative photoresist
From method, using negative photoresist improve roughening figure stabilization, obtain preferably being roughened current extending.And it can pass through
Conventional equipment and conventional method are realized, can be realized by conventional negtive photoresist removing twice, simple flow is suitble to large-scale production.
Detailed description of the invention
Fig. 1 is the structural schematic diagram in the present invention with the GaAs base LED chip of roughening current extending.
Fig. 2 is the cross-sectional view of GaAs base LED chip made from preparation method step (2) in the present invention.
Fig. 3 is the cross-sectional view of GaAs base LED chip made from preparation method step (4) in the present invention.
Fig. 4 is the cross-sectional view of GaAs base LED chip made from preparation method step (5) in the present invention.
Fig. 5 is the cross-sectional view of GaAs base LED chip made from preparation method step (6) in the present invention.
In figure: 1, N electrode, 2, GaAs substrate, 3, epitaxial layer, 4, negative photoresist roughening figure, 5, roughening current expansion
Layer, 6, be not roughened current extending, 7, negative photoresist, 8, P electrode.
Specific embodiment
Of the invention has the GaAs base LED chip of roughening current extending, as shown in Figure 1, being followed successively by N electricity from lower to upper
Pole 1, GaAs substrate 2, epitaxial layer 3 and current extending are provided with p-electrode 7 on current extending, in addition to the electricity of 7 lower section of p-electrode
The current expansion layer region of 7 periphery of p-electrode is roughening current extending 5, that is, current extending other than stream extension layer region
It is not only roughening structure below p-electrode 7, rest part is all roughening.
It is not roughened region (not being roughened current extending 6) in current extending 5 to be overlapped with P electrode 7, in this way in p-electrode 7
Lower section passes through the current extending that is not roughened and preferably extends electric current, by current extending outside P electrode other areas
Domain carries out the shooting angle that roughening changes light, improves light extraction efficiency, improves the quality of GaAs based light-emitting diode.
The preparation method of above-mentioned GaAs base LED chip, including step in detail below.
(1) in 2 growing epitaxial layers 3 of GaAs substrate.
(2) negative photoresist with a thickness of 2-3 μm is coated in the epi-layer surface of step (1) preparation, in negative photoresist
On reserve the region of the p-electrode of being prepared, remaining region obtains negative photoresist by conventional lithographic and is roughened figure 4；Such as Fig. 2
It is shown.
(3) under the conditions of 100-150 DEG C of temperature, on the entire negative photoresist that step (2) is applied (including roughening with not
The region of roughening) ito thin film that a layer thickness is 0.1-0.25 μm is deposited, form current extending.
(4) roughening current extending is obtained by routine negtive photoresist stripping means, and at 380-450 DEG C, annealed, made
It is standby to go out to be roughened current extending 5, and the current extending in reserved area is not roughened, not to be roughened current extending 6, such as
Shown in Fig. 3.
(5) negative photoresist with a thickness of 3-4 μm is applied in the current expansion layer surface of step (4) preparation, passes through conventional light
Obtain negative photoresist electrode pattern quarter, electrode pattern just with the area coincidence that is not roughened current extending 6；As shown in Figure 4；
(6) it is prepared in step (5) and prepares p-electrode on negative photoresist electrode pattern, the specific steps are as follows:
A, the Cr film that a layer thickness is 0.05-0.1 μm and 1.5-2.5 μm are plated in negative photoresist electrode pattern upper surface
Au film；
B, by the method routinely removed by outside p-electrode Cr film and Au film stripping fall, obtain p-electrode 7.As shown in Figure 5
(7) conventional thinned and growth N electrode is carried out to GaAs substrate, the specific steps are as follows:
A, it carries out routine to GaAs substrate 2 to be thinned, with a thickness of 150-220 μm after being thinned；
B, the GaAs substrate back after being thinned grows 0.3-0.5 μm of Au film as N electrode 1.
In the present invention, roughening 5 preparation process of current extending is used the simplest method and is adopted using negative photoresist
The stabilization of roughening figure is improved using negative photoresist with the method preparation that conventional negative photoresist is removed, is obtained preferably
It is roughened current extending.
One layer of ito thin film is deposited on 3 surface of epitaxial layer, this ito thin film covers entire chip surface and removes P electrode position
Outer other regions have carried out roughening treatment, and electric current can preferably expand to entire chip and be made by the roughening to ito thin film
It obtains luminous energy and obtains better shooting angle；Ito thin film is formd with GaAs base light emitting diode chip epitaxial layer by annealing
Good Ohmic contact greatly reduces the voltage of chip.
The present invention has by growth not to be roughened current extending below one layer of roughening current extending and P electrode, in p electricity
Electric current is preferably extended by current extending below pole, by the roughening to current extending, changes the shooting angle of light,
Light extraction efficiency is improved, the quality of GaAs based light-emitting diode is improved.
Claims (8)
1. a kind of preparation method of the GaAs base LED chip with roughening current extending, characterized in that the following steps are included:
(1) grown epitaxial layer on gaas substrates；
(2) negative photoresist is applied in epi-layer surface, the region for the p-electrode of being prepared is reserved on negative photoresist, remaining
Region is roughened figure by being lithographically derived negative photoresist；
(3) current extending is grown in the entire negative photoresist upper surface that step (2) is applied；
(4) by removing negative photoresist, roughening current extending is obtained in negative photoresist roughening graphics field, in other areas
Domain is not roughened current extending, and is annealed to roughening current extending；
(5) negative photoresist electrode pattern is prepared on roughening current extending；
(6) p-electrode is prepared on negative photoresist electrode pattern；
(7) to GaAs substrate thinning and growth N electrode.
2. having the preparation method of the GaAs base LED chip of roughening current extending according to claim 1, characterized in that
Negative photoresist applies with a thickness of 2-3 μm in the step (2).
3. having the preparation method of the GaAs base LED chip of roughening current extending according to claim 1, characterized in that
The step (3) is to deposit one layer of ito thin film on negative photoresist roughening patterned surface under the conditions of 100-150 DEG C of temperature,
Form current extending.
4. having the preparation method of the GaAs base LED chip of roughening current extending according to claim 3, characterized in that
The ito thin film with a thickness of 0.1-0.25 μm.
5. having the preparation method of the GaAs base LED chip of roughening current extending according to claim 1, characterized in that
Annealing in the step (4) is carried out at 380-450 DEG C.
6. having the preparation method of the GaAs base LED chip of roughening current extending according to claim 1, characterized in that
The step (5) is to coat the negative photoresist with a thickness of 3-4 μm in roughening current expansion layer surface, by being lithographically derived electrode
Figure, electrode pattern just be not roughened current extending and be overlapped.
7. having the preparation method of the GaAs base LED chip of roughening current extending according to claim 1, characterized in that
Preparing p-electrode in the step (6) on negative photo glue pattern, specific step is as follows:
1. plating a layer thickness in negative photo glue pattern upper surface is 0.05-0.1 μm of Cr film and 1.5-2.5 μm of Au film；
2. by outside p-electrode Cr film and Au film stripping fall, obtain p-electrode.
8. having the preparation method of the GaAs base LED chip of roughening current extending according to claim 1, characterized in that
In the step (7), to GaAs substrate thinning and growth N electrode specific step is as follows:
1. to GaAs substrate thinning to a thickness of 150-220 μm；
2. 0.3-0.5 μm of growth thickness of GaAs substrate back of the Au film after being thinned is as N electrode.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610949920.7A CN106340574B (en) | 2016-11-02 | 2016-11-02 | GaAs base LED chip and preparation method with roughening current extending |
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| CN108538998B (en) * | 2018-03-30 | 2021-02-23 | 扬州乾照光电有限公司 | LED chip and manufacturing method thereof |
| CN111487845A (en) * | 2019-01-29 | 2020-08-04 | 山东浪潮华光光电子股份有限公司 | Method for manufacturing L ED die electrode mask pattern capable of being directly stripped |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428485A (en) * | 2015-12-21 | 2016-03-23 | 扬州乾照光电有限公司 | GaP surface roughened AlGaInP-based LED and manufacturing method therefor |
| CN105702820A (en) * | 2016-04-08 | 2016-06-22 | 扬州乾照光电有限公司 | Reversed-polarity AlGaInP-based LED coated with ITO on surface and manufacturing method thereof |
| CN206163513U (en) * | 2016-11-02 | 2017-05-10 | 山东浪潮华光光电子股份有限公司 | GaAs base LED chip with alligatoring electric current extension layer |
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2016
- 2016-11-02 CN CN201610949920.7A patent/CN106340574B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428485A (en) * | 2015-12-21 | 2016-03-23 | 扬州乾照光电有限公司 | GaP surface roughened AlGaInP-based LED and manufacturing method therefor |
| CN105702820A (en) * | 2016-04-08 | 2016-06-22 | 扬州乾照光电有限公司 | Reversed-polarity AlGaInP-based LED coated with ITO on surface and manufacturing method thereof |
| CN206163513U (en) * | 2016-11-02 | 2017-05-10 | 山东浪潮华光光电子股份有限公司 | GaAs base LED chip with alligatoring electric current extension layer |
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