CN106784218B - A kind of LED chip and preparation method thereof - Google Patents
A kind of LED chip and preparation method thereof Download PDFInfo
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- CN106784218B CN106784218B CN201611148825.3A CN201611148825A CN106784218B CN 106784218 B CN106784218 B CN 106784218B CN 201611148825 A CN201611148825 A CN 201611148825A CN 106784218 B CN106784218 B CN 106784218B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
Abstract
The invention discloses a kind of LED chips and preparation method thereof, belong to technical field of semiconductors.The LED chip includes substrate, and stack gradually n-type nitride semiconductor layer on substrate, luminescent layer, p-type nitride semiconductor layer, current barrier layer, transparency conducting layer, p-type nitride semiconductor layer is equipped with the groove for extending to n-type nitride semiconductor layer, n-type nitride semiconductor layer, the side wall of groove, transparency conducting layer is equipped with passivation layer, passivation layer on transparency conducting layer is equipped with the first through hole for extending to p-type nitride semiconductor layer, p-type electrode is arranged in first through hole, passivation layer in n-type nitride semiconductor layer is equipped with the second through-hole for extending to n-type nitride semiconductor layer, n-type electrode is arranged in the second through-hole, current barrier layer is equipped with several third through-holes for extending to p-type nitride semiconductor layer.The light issued below current barrier layer of the present invention can be projected by third through-hole, improve out light and brightness.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of LED chip and preparation method thereof.
Background technique
Light emitting diode (English: Light Emitting Diode, referred to as: LED) small with energy consumption, pollution-free, high brightness,
The advantages such as long-life become focus concerned by people, are applied to illumination, the fields such as backlight, screen are shown, automobile, medical treatment.
White light LEDs are usually obtained by GaN base LED chip excitated fluorescent powder, and wherein GaN base LED chip mainly uses following
Step is realized: successively growing n-type nitride semiconductor layer, active layer, p-type nitride semiconductor layer on a sapphire substrate；Benefit
The groove for extending to n-type nitride semiconductor layer is formed on p-type nitride semiconductor layer with photoetching technique；Utilize photoetching technique
Current barrier layer is formed on p-type nitride semiconductor layer；Using photoetching technique in current barrier layer and p-type nitride-based semiconductor
Transparency conducting layer is formed on layer；P-type electrode is formed on p-type nitride semiconductor layer using photoetching technique, in N-shaped nitride half
N-type electrode is formed in conductor layer；Using photoetching technique in n-type nitride semiconductor layer, transparency conducting layer and recess sidewall
Form passivation layer.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
Current barrier layer is generally arranged at the region that p-type electrode is corresponded on p-type nitride semiconductor layer, avoids electric current direct
Transparency conducting layer longitudinal direction implanted with p-type nitride semiconductor layer from p-type electrode corresponding region, drives electric current extending transversely, expands
Light emitting region promotes the brightness and luminous efficiency of LED chip.The light issued below current barrier layer simultaneously can be by current blocking
Layer absorbs, and influences LED chip brightness and luminous efficiency.
Summary of the invention
In order to solve problems in the prior art, the embodiment of the invention provides a kind of LED chips and preparation method thereof.It is described
Technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of LED chip, the LED chip includes substrate and stacks gradually
N-type nitride semiconductor layer over the substrate, luminescent layer, p-type nitride semiconductor layer, current barrier layer, electrically conducting transparent
Layer, the p-type nitride semiconductor layer are equipped with the groove for extending to the n-type nitride semiconductor layer, the N-shaped nitride
Semiconductor layer, the side wall of the groove, the transparency conducting layer are equipped with passivation layer, on the passivation layer on the transparency conducting layer
Equipped with the first through hole for extending to the p-type nitride semiconductor layer, p-type electrode is arranged in the first through hole, the N-shaped
Passivation layer on nitride semiconductor layer is equipped with the second through-hole for extending to the n-type nitride semiconductor layer, and n-type electrode is set
It sets in second through-hole, the current barrier layer is equipped with several thirds for extending to the p-type nitride semiconductor layer
Through-hole.
Optionally, the third through-hole is cylinder.
Preferably, the cross section of the cylinder is any one of circle, triangle, rectangular, hexagon.
It is highly preferred that the longest distance on the cross section of the cylinder between two o'clock is 1~5 μm.
Optionally, the current barrier layer is using one of following material or a variety of formation: silica, titanium dioxide
Titanium, silicon nitride.
On the other hand, the embodiment of the invention provides a kind of production method of LED chip, the production method includes:
Successively epitaxial growth n-type nitride semiconductor layer, luminescent layer, p-type nitride semiconductor layer on substrate；
The groove extended in the n-type nitride semiconductor layer is opened up on the p-type nitride semiconductor layer；
Current barrier layer is formed on the p-type nitride semiconductor layer, is equipped in the current barrier layer and is extended to institute
State the through-hole of p-type gallium nitride semiconductor layers；
Transparency conducting layer, the electrically conducting transparent are formed on the current barrier layer and the p-type nitride semiconductor layer
The through-hole being connected to the through-hole in the p-type gallium nitride semiconductor layers is equipped in layer；
Passivation layer is formed on the n-type nitride semiconductor layer, the side wall of the groove, the transparency conducting layer, institute
State the through-hole for being equipped in the passivation layer on transparency conducting layer and being connected to the through-hole in the transparency conducting layer, the transparency conducting layer
On passivation layer in through-hole, the through-hole in the transparency conducting layer, through-hole in the current barrier layer form first through hole,
Passivation layer in the n-type nitride semiconductor layer is equipped with the second through-hole for extending to the n-type nitride semiconductor layer；
P-type electrode is set in the first through hole, n-type electrode is set in second through-hole；
Several third through-holes for extending to the p-type nitride semiconductor layer are additionally provided on the current barrier layer.
Optionally, the third through-hole is cylinder.
Preferably, the cross section of the cylinder is any one of circle, triangle, rectangular, hexagon.
It is highly preferred that the longest distance on the cross section of the cylinder between two o'clock is 1~5 μm.
Optionally, the current barrier layer is using one of following material or a variety of formation: silica, titanium dioxide
Titanium, silicon nitride.
Technical solution provided in an embodiment of the present invention has the benefit that
Electric current is avoided directly longitudinally to inject p from the transparency conducting layer of p-type electrode corresponding region by the way that current barrier layer is arranged
Type nitride semiconductor layer drives electric current extending transversely, expands light emitting region, while current barrier layer is equipped with several extend to
The third through-hole of p-type nitride semiconductor layer, the light that current barrier layer lower section issues can be projected by third through-hole, be improved
The light extraction efficiency of LED chip, increases the light emission luminance of LED chip.And production method is simple, does not need additionally to increase system
Make step, cost of implementation is low.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram for LED chip that the embodiment of the present invention one provides；
Fig. 2 is the sectional view in Fig. 1 at A-A；
Fig. 3 is a kind of flow diagram of the production method of LED chip provided by Embodiment 2 of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
The embodiment of the invention provides a kind of LED chips, and referring to Fig. 1 and Fig. 2, which includes substrate 1 and successively layer
The n-type nitride semiconductor layer 2 that is stacked on substrate 1, p-type nitride semiconductor layer 4, current barrier layer 5, transparent is led at luminescent layer 3
Electric layer 6, p-type nitride semiconductor layer 4 are equipped with the groove for extending to n-type nitride semiconductor layer 2, N-shaped nitride-based semiconductor
Layer 2, the side wall of groove, transparency conducting layer 6 are equipped with passivation layer 7, and the passivation layer 7 on transparency conducting layer 6, which is equipped with, extends to p-type
The passivation in first through hole, in n-type nitride semiconductor layer 2 is arranged in the first through hole of nitride semiconductor layer 4, p-type electrode 8
Layer 7 is equipped with the second through-hole for extending to n-type nitride semiconductor layer 2, and n-type electrode 9 is arranged in the second through-hole.
In the present embodiment, as shown in Fig. 2, current barrier layer 5 extends to p-type nitride semiconductor layer 4 equipped with several
Third through-hole 50.
Optionally, third through-hole can be cylinder.
Preferably, the cross section of cylinder can be any one of circle, triangle, rectangular, hexagon.
It is highly preferred that the longest distance on the cross section of cylinder between two o'clock can be 1~5 μm.
Optionally, current barrier layer can be using one of following material or a variety of formation: silica, titanium dioxide
Titanium, silicon nitride.
Specifically, substrate can be Sapphire Substrate, can also be with nitride-based semiconductor, such as SiN, GaN；N-shaped nitride half
Conductor layer can be the GaN layer of n-type doping；Luminescent layer may include that alternately stacked InGaN quantum well layer and GaN quantum are built
Layer；P-type nitride semiconductor layer can be the GaN layer of p-type doping；Transparency conducting layer can be indium tin oxide layer；Passivation layer can
Think silicon dioxide layer or silicon nitride layer；P-type electrode may include the Ni layer stacked gradually, Al layers, Cr layers, Ni layers, Au layers,
N-type electrode may include the Ni layer stacked gradually, Al layers, Cr layers, Ni layers, Au layers.
The embodiment of the present invention avoids electrically conducting transparent of the electric current directly from p-type electrode corresponding region by the way that current barrier layer is arranged
The longitudinal implanted with p-type nitride semiconductor layer of layer, drives electric current extending transversely, expands light emitting region, while setting on current barrier layer
There are several third through-holes for extending to p-type nitride semiconductor layer, the light issued below current barrier layer can pass through third
Through-hole projects, and improves the light extraction efficiency of LED chip, increases the light emission luminance of LED chip.And production method is simple, no
It needs additionally to increase making step, cost of implementation is low.
Embodiment two
The embodiment of the invention provides a kind of production methods of LED chip, and referring to Fig. 3, which includes:
Step 201: successively epitaxial growth n-type nitride semiconductor layer, luminescent layer, p-type nitride-based semiconductor on substrate
Layer.
Specifically, substrate can be Sapphire Substrate, can also be with nitride-based semiconductor, such as SiN, GaN；N-shaped nitride half
Conductor layer can be the GaN layer of n-type doping；Luminescent layer may include that alternately stacked InGaN quantum well layer and GaN quantum are built
Layer；P-type nitride semiconductor layer can be the GaN layer of p-type doping.
Step 202: the groove for extending to n-type nitride semiconductor layer is opened up on p-type nitride semiconductor layer.
Step 203: forming current barrier layer on p-type nitride semiconductor layer, be equipped in current barrier layer and extend to p-type
The through-hole of gallium nitride semiconductor layers and several third through-holes for extending to p-type nitride semiconductor layer.
Optionally, third through-hole can be cylinder.
Preferably, the cross section of cylinder can be any one of circle, triangle, rectangular, hexagon.
It is highly preferred that the longest distance on the cross section of cylinder between two o'clock can be 1~5 μm.
Optionally, current barrier layer can be using one of following material or a variety of formation: silica, titanium dioxide
Titanium, silicon nitride.
Step 204: transparency conducting layer is formed on current barrier layer and p-type nitride semiconductor layer, in transparency conducting layer
Equipped with the through-hole being connected to the through-hole in p-type gallium nitride semiconductor layers.
Specifically, transparency conducting layer can be indium tin oxide layer.
Step 205: passivation layer is formed on n-type nitride semiconductor layer, the side wall of groove, transparency conducting layer, it is transparent to lead
The through-hole being connected to the through-hole in transparency conducting layer is equipped in passivation layer in electric layer, it is logical in the passivation layer on transparency conducting layer
Through-hole in through-hole, current barrier layer in hole, transparency conducting layer forms first through hole, blunt in n-type nitride semiconductor layer
Change layer and is equipped with the second through-hole for extending to n-type nitride semiconductor layer.
Specifically, passivation layer can be silicon dioxide layer or silicon nitride layer.
Step 206: p-type electrode being set in first through hole, n-type electrode is set in the second through-hole.
Specifically, p-type electrode may include the Ni layer stacked gradually, Al layers, Cr layers, Ni layers, Au layers, and n-type electrode can be with
Including Ni layer, Al layers, Cr layers, Ni layers, Au layers stacked gradually.
The embodiment of the present invention avoids electrically conducting transparent of the electric current directly from p-type electrode corresponding region by the way that current barrier layer is arranged
The longitudinal implanted with p-type nitride semiconductor layer of layer, drives electric current extending transversely, expands light emitting region, while setting on current barrier layer
There are several third through-holes for extending to p-type nitride semiconductor layer, the light issued below current barrier layer can pass through third
Through-hole projects, and improves the light extraction efficiency of LED chip, increases the light emission luminance of LED chip.And production method is simple, no
It needs additionally to increase making step, cost of implementation is low.
Embodiment three
The embodiment of the invention provides a kind of production methods of LED chip, are the tools for the production method that embodiment two provides
Body realizes that the production method includes:
Step 301: using Metalorganic Chemical Vapor Deposition successively epitaxial growth N-shaped nitride-based semiconductor on substrate
Layer, luminescent layer, p-type nitride semiconductor layer form epitaxial wafer.
Step 302: cleaning epitaxial wafer is opened on p-type nitride semiconductor layer using photoetching technique and dry etching technology
If extending to the groove of n-type nitride semiconductor layer.
Step 303: using chemical vapour deposition technique in extension on piece cvd silicon dioxide film, and in positive photoresist
Protection under wet etching formed and be covered with the current barrier layer of third through-hole, remove positive photoresist, the cross section of third through-hole
For 2 μm of circle of diameter.
Step 304: flashing to indium tin oxide films, and the wet etching under the protection of positive photoresist using high energy particle
Transparency conducting layer is formed, positive photoresist is removed.
Step 305: using chemical vapour deposition technique cvd silicon dioxide film, and wet under the protection of negative photoresist
Method corrodes to form passivation layer.
Step 306: flashing to metal film using high energy particle, removing negative photoresist forms p-type electrode and n-type electrode.
Example IV
The embodiment of the invention provides a kind of production methods of LED chip, are the tools for the production method that embodiment two provides
Body realizes that the production method includes:
Step 401: using Metalorganic Chemical Vapor Deposition successively epitaxial growth N-shaped nitride-based semiconductor on substrate
Layer, luminescent layer, p-type nitride semiconductor layer form epitaxial wafer.
Step 402: cleaning epitaxial wafer is opened on p-type nitride semiconductor layer using photoetching technique and dry etching technology
If extending to the groove of n-type nitride semiconductor layer.
Step 403: using chemical vapour deposition technique in extension on piece cvd silicon dioxide film, and in positive photoresist
Protection under wet etching formed and be covered with the current barrier layer of third through-hole, remove positive photoresist, the cross section of third through-hole
For hexagon.
Step 404: flashing to indium tin oxide films, and the wet etching under the protection of positive photoresist using high energy particle
Transparency conducting layer is formed, positive photoresist is removed.
Step 405: flashing to metal film using high energy particle, and wet etching forms p under the protection of positive photoresist
Type electrode and n-type electrode.
Step 406: using chemical vapour deposition technique cvd nitride silicon thin film, and the dry method under the protection of positive photoresist
Corrosion forms passivation layer.
The serial number of the above embodiments of the invention is only for description, does not represent the advantages or disadvantages of the embodiments.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of LED chip, the LED chip includes that substrate and the N-shaped nitride stacked gradually over the substrate are partly led
Body layer, luminescent layer, p-type nitride semiconductor layer, current barrier layer, transparency conducting layer are set on the p-type nitride semiconductor layer
There is a groove for extending to the n-type nitride semiconductor layer, the side wall, described of the n-type nitride semiconductor layer, the groove
Transparency conducting layer is equipped with passivation layer, and the passivation layer on the transparency conducting layer, which is equipped with, to be extended to the p-type nitride and partly lead
The first through hole of body layer, p-type electrode is arranged in the first through hole, on the passivation layer in the n-type nitride semiconductor layer
Equipped with the second through-hole for extending to the n-type nitride semiconductor layer, n-type electrode is arranged in second through-hole, feature
It is, the current barrier layer is equipped with several third through-holes for extending to the p-type nitride semiconductor layer, and the third is logical
The base surface area in hole is not overlapped with the base surface area of the first through hole；The current barrier layer is in U-shape on setting surface, institute
The shape of the shape and the current barrier layer of stating p-type electrode matches, and the p-type electrode is on the current barrier layer
The inside for the figure that the outer profile that orthographic projection is located at the current barrier layer is surrounded, the n-type electrode are on setting surface
Bar shaped, the bar shaped are located between the both ends of the U-shaped.
2. LED chip according to claim 1, which is characterized in that the third through-hole is cylinder.
3. LED chip according to claim 2, which is characterized in that the cross section of the cylinder is circle, triangle, side
Any one of shape, hexagon.
4. LED chip according to claim 3, which is characterized in that the longest on the cross section of the cylinder between two o'clock
Distance is 1~5 μm.
5. LED chip according to any one of claims 1 to 4, which is characterized in that the current barrier layer uses following material
One of material or a variety of formation: silica, titanium dioxide, silicon nitride.
6. a kind of production method of LED chip, the production method include:
Successively epitaxial growth n-type nitride semiconductor layer, luminescent layer, p-type nitride semiconductor layer on substrate；
The groove extended in the n-type nitride semiconductor layer is opened up on the p-type nitride semiconductor layer；
Current barrier layer is formed on the p-type nitride semiconductor layer, is equipped in the current barrier layer and is extended to the p-type
The through-hole of nitride semiconductor layer；
Transparency conducting layer is formed on the current barrier layer and the p-type nitride semiconductor layer, in the transparency conducting layer
Equipped with the through-hole being connected to the through-hole in the p-type nitride semiconductor layer；
Passivation layer is formed on the n-type nitride semiconductor layer, the side wall of the groove, the transparency conducting layer, it is described
The through-hole being connected to the through-hole in the transparency conducting layer is equipped in passivation layer on bright conductive layer, on the transparency conducting layer
Through-hole in passivation layer, the through-hole in the transparency conducting layer, the through-hole in the current barrier layer form first through hole, described
Passivation layer in n-type nitride semiconductor layer is equipped with the second through-hole for extending to the n-type nitride semiconductor layer；
P-type electrode is set in the first through hole, n-type electrode is set in second through-hole；
It is characterized in that, it is logical to be additionally provided with several thirds for extending to the p-type nitride semiconductor layer on the current barrier layer
Hole, the base surface area of the third through-hole are not overlapped with the base surface area of the first through hole；The current barrier layer is being arranged
It is in U-shape on surface, the shape of the p-type electrode and the shape of the current barrier layer match, and the p-type electrode is described
The inside for the figure that the outer profile that orthographic projection on current barrier layer is located at the current barrier layer is surrounded, the n-type electrode
It is in bar shaped on setting surface, the bar shaped is located between the both ends of the U-shaped.
7. production method according to claim 6, which is characterized in that the third through-hole is cylinder.
8. production method according to claim 7, which is characterized in that the cross section of the cylinder is circle, triangle, side
Any one of shape, hexagon.
9. production method according to claim 8, which is characterized in that the longest on the cross section of the cylinder between two o'clock
Distance is 1~5 μm.
10. according to the described in any item production methods of claim 6~9, which is characterized in that the current barrier layer is using following
One of material or a variety of formation: silica, titanium dioxide, silicon nitride.
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| CN107331749B (en) * | 2017-05-27 | 2019-06-11 | 华灿光电（浙江）有限公司 | A kind of preparation method of light-emitting diode chip for backlight unit |
| CN108133999B (en) * | 2017-12-22 | 2019-09-27 | 湘能华磊光电股份有限公司 | A kind of LED chip structure and preparation method thereof |
| CN110165025A (en) * | 2019-03-29 | 2019-08-23 | 华灿光电(苏州）有限公司 | Light-emitting diode chip for backlight unit, light emitting diode and preparation method thereof |
| WO2021077338A1 (en) * | 2019-10-23 | 2021-04-29 | 安徽三安光电有限公司 | Light-emitting diode and manufacturing method therefor |
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