CN106784218A - LED chip and manufacturing method thereof - Google Patents
LED chip and manufacturing method thereof Download PDFInfo
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- CN106784218A CN106784218A CN201611148825.3A CN201611148825A CN106784218A CN 106784218 A CN106784218 A CN 106784218A CN 201611148825 A CN201611148825 A CN 201611148825A CN 106784218 A CN106784218 A CN 106784218A
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- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 claims abstract description 99
- 150000004767 nitrides Chemical class 0.000 claims abstract description 98
- 238000002161 passivation Methods 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 230000004888 barrier function Effects 0.000 claims description 41
- 238000002360 preparation method Methods 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 229910002601 GaN Inorganic materials 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 4
- 239000004408 titanium dioxide Substances 0.000 claims 2
- 230000000903 blocking effect Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 239000010408 film Substances 0.000 description 7
- 238000001259 photo etching Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- HGWOWDFNMKCVLG-UHFFFAOYSA-N [O--].[O--].[Ti+4].[Ti+4] Chemical compound [O--].[O--].[Ti+4].[Ti+4] HGWOWDFNMKCVLG-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses an LED chip and a manufacturing method thereof, and belongs to the technical field of semiconductors. The LED chip comprises a substrate, an n-type nitride semiconductor layer, a light emitting layer, a p-type nitride semiconductor layer, a current blocking layer and a transparent conducting layer, wherein the n-type nitride semiconductor layer, the light emitting layer, the p-type nitride semiconductor layer, the current blocking layer and the transparent conducting layer are sequentially stacked on the substrate, a groove extending to the n-type nitride semiconductor layer is formed in the p-type nitride semiconductor layer, the side wall of the groove and the transparent conducting layer are provided with passivation layers, a first through hole extending to the p-type nitride semiconductor layer is formed in the passivation layer on the transparent conducting layer, a p-type electrode is arranged in the first through hole, a second through hole extending to the n-type nitride semiconductor layer is formed in the passivation layer on the n-type nitride. The light emitted below the current blocking layer can be emitted through the third through hole, so that the light emitting and brightness are improved.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of LED chip and preparation method thereof.
Background technology
Light emitting diode (English：Light Emitting Diode, referred to as：LED) so that energy consumption is small, pollution-free, high brightness,
The advantages such as long-life, as focus of concern, are applied to the fields such as illumination, backlight, screen display, automobile, medical treatment.
White light LEDs are generally obtained by GaN base LED chip excitated fluorescent powder, and wherein GaN base LED chip is mainly using following
Step is realized：Growing n-type nitride semiconductor layer, active layer, p-type nitride semiconductor layer successively on a sapphire substrate；Profit
The groove for extending to n-type nitride semiconductor layer is formed on p-type nitride semiconductor layer with photoetching technique；Using photoetching technique
Current barrier layer is formed on p-type nitride semiconductor layer；Using photoetching technique in current barrier layer and p-type nitride-based semiconductor
Transparency conducting layer is formed on layer；P-type electrode is formed on p-type nitride semiconductor layer using photoetching technique, in N-shaped nitride half
N-type electrode is formed in conductor layer；Using photoetching technique in n-type nitride semiconductor layer, transparency conducting layer and recess sidewall
Form passivation layer.
Realize it is of the invention during, inventor find prior art at least there is problems with：
Current barrier layer is generally arranged at the region of correspondence p-type electrode on p-type nitride semiconductor layer, it is to avoid electric current is direct
From the transparency conducting layer of p-type electrode corresponding region longitudinal direction implanted with p-type nitride semiconductor layer, it is extending transversely to order about electric current, expands
Light-emitting zone, lifts brightness and the luminous efficiency of LED chip.The light that current barrier layer lower section sends simultaneously can be by current blocking
Layer absorbs, and influences LED chip brightness and luminous efficiency.
The content of the invention
In order to solve problem of the prior art, a kind of LED chip and preparation method thereof is the embodiment of the invention provides.It is described
Technical scheme is as follows：
On the one hand, a kind of LED chip is the embodiment of the invention provides, the LED chip includes substrate and stacks gradually
N-type nitride semiconductor layer over the substrate, luminescent layer, p-type nitride semiconductor layer, current barrier layer, electrically conducting transparent
Layer, the p-type nitride semiconductor layer is provided with the groove for extending to the n-type nitride semiconductor layer, the N-shaped nitride
Semiconductor layer, the side wall of the groove, the transparency conducting layer are provided with passivation layer, on the passivation layer on the transparency conducting layer
The first through hole for extending to the p-type nitride semiconductor layer is provided with, p-type electrode is arranged in the first through hole, the N-shaped
Passivation layer on nitride semiconductor layer is provided with the second through hole for extending to the n-type nitride semiconductor layer, and n-type electrode sets
Put in second through hole, the current barrier layer is provided with and some extends to the 3rd of the p-type nitride semiconductor layer
Through hole.
Alternatively, the third through-hole is cylinder.
Preferably, the cross section of the cylinder is any one in circle, triangle, square, hexagon.
It is highly preferred that the longest distance on the cross section of the cylinder between 2 points is 1~5 μm.
Alternatively, the current barrier layer is using one or more formation in following material：Silica, titanium dioxide
Titanium, silicon nitride.
On the other hand, a kind of preparation method of LED chip is the embodiment of the invention provides, the preparation method includes：
Epitaxial growth n-type nitride semiconductor layer, luminescent layer, p-type nitride semiconductor layer successively on substrate；
The groove extended in the n-type nitride semiconductor layer is opened up on the p-type nitride semiconductor layer；
Current barrier layer is formed on the p-type nitride semiconductor layer, is provided with the current barrier layer and is extended to institute
State the through hole of p-type gallium nitride semiconductor layers；
Transparency conducting layer, the electrically conducting transparent are formed on the current barrier layer and the p-type nitride semiconductor layer
The through hole connected with the through hole in the p-type gallium nitride semiconductor layers is provided with layer；
Passivation layer is formed on the n-type nitride semiconductor layer, the side wall of the groove, the transparency conducting layer, institute
State the through hole for being provided with the passivation layer on transparency conducting layer and being connected with the through hole in the transparency conducting layer, the transparency conducting layer
On passivation layer in through hole, the through hole in the transparency conducting layer, in the current barrier layer through hole composition first through hole,
Passivation layer in the n-type nitride semiconductor layer is provided with the second through hole for extending to the n-type nitride semiconductor layer；
P-type electrode is set in the first through hole, n-type electrode is set in second through hole；
Some third through-holes for extending to the p-type nitride semiconductor layer are additionally provided with the current barrier layer.
Alternatively, the third through-hole is cylinder.
Preferably, the cross section of the cylinder is any one in circle, triangle, square, hexagon.
It is highly preferred that the longest distance on the cross section of the cylinder between 2 points is 1~5 μm.
Alternatively, the current barrier layer is using one or more formation in following material：Silica, titanium dioxide
Titanium, silicon nitride.
The beneficial effect that technical scheme provided in an embodiment of the present invention is brought is：
Electric current is avoided directly longitudinally to inject p from the transparency conducting layer of p-type electrode corresponding region by setting current barrier layer
Type nitride semiconductor layer, it is extending transversely to order about electric current, expands light-emitting zone, while current barrier layer is provided with some extending to
The third through-hole of p-type nitride semiconductor layer, the light that current barrier layer lower section sends can be projected by third through-hole, be improved
The light extraction efficiency of LED chip, increased the luminosity of LED chip.And preparation method is simple, it is not necessary to extra to increase system
Make step, cost of implementation is low.
Brief description of the drawings
Technical scheme in order to illustrate more clearly the embodiments of the present invention, below will be to that will make needed for embodiment description
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for
For those of ordinary skill in the art, on the premise of not paying creative work, other can also be obtained according to these accompanying drawings
Accompanying drawing.
Fig. 1 is a kind of structural representation of LED chip that the embodiment of the present invention one is provided；
Fig. 2 is the profile at A-A in Fig. 1；
Fig. 3 is a kind of schematic flow sheet of the preparation method of LED chip that the embodiment of the present invention two is provided.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
A kind of LED chip is the embodiment of the invention provides, referring to Fig. 1 and Fig. 2, the LED includes substrate 1 and successively layer
Folded n-type nitride semiconductor layer 2 on substrate 1, luminescent layer 3, p-type nitride semiconductor layer 4, current barrier layer 5, transparent lead
Electric layer 6, p-type nitride semiconductor layer 4 is provided with the groove for extending to n-type nitride semiconductor layer 2, N-shaped nitride-based semiconductor
Layer 2, the side wall of groove, transparency conducting layer 6 are provided with passivation layer 7, and the passivation layer 7 on transparency conducting layer 6 is provided with and extends to p-type
The first through hole of nitride semiconductor layer 4, p-type electrode 8 is arranged in first through hole, the passivation in n-type nitride semiconductor layer 2
Layer 7 is provided with the second through hole for extending to n-type nitride semiconductor layer 2, and n-type electrode 9 is arranged in the second through hole.
In the present embodiment, as shown in Fig. 2 current barrier layer 5 is provided with and some extends to p-type nitride semiconductor layer 4
Third through-hole 50.
Alternatively, third through-hole can be cylinder.
Preferably, the cross section of cylinder can be any one in circle, triangle, square, hexagon.
It is highly preferred that the longest distance on the cross section of cylinder between 2 points can be 1~5 μm.
Alternatively, current barrier layer can be using one or more formation in following material：Silica, titanium dioxide
Titanium, silicon nitride.
Specifically, substrate can be Sapphire Substrate, it is also possible to nitride-based semiconductor, such as SiN, GaN；N-shaped nitride half
Conductor layer can be the GaN layer of N-shaped doping；Luminescent layer can include that alternately laminated InGaN quantum well layers and GaN quantum are built
Layer；P-type nitride semiconductor layer can be the GaN layer of p-type doping；Transparency conducting layer can be indium tin oxide layer；Passivation layer can
Think silicon dioxide layer or silicon nitride layer；P-type electrode can include Ni layers, Al layers, Cr layers, Ni layers, Au layers stacked gradually,
N-type electrode can include Ni layers, Al layers, Cr layers, Ni layers, Au layers stacked gradually.
The embodiment of the present invention avoids electric current directly from the electrically conducting transparent of p-type electrode corresponding region by setting current barrier layer
The longitudinal implanted with p-type nitride semiconductor layer of layer, it is extending transversely to order about electric current, expands light-emitting zone, while being set on current barrier layer
There are some third through-holes for extending to p-type nitride semiconductor layer, the light that current barrier layer lower section sends can be by the 3rd
Through hole is projected, and improves the light extraction efficiency of LED chip, increased the luminosity of LED chip.And preparation method is simple, no
Extra increase making step is needed, cost of implementation is low.
Embodiment two
A kind of preparation method of LED chip is the embodiment of the invention provides, referring to Fig. 3, the preparation method includes：
Step 201：Epitaxial growth n-type nitride semiconductor layer, luminescent layer, p-type nitride-based semiconductor successively on substrate
Layer.
Specifically, substrate can be Sapphire Substrate, it is also possible to nitride-based semiconductor, such as SiN, GaN；N-shaped nitride half
Conductor layer can be the GaN layer of N-shaped doping；Luminescent layer can include that alternately laminated InGaN quantum well layers and GaN quantum are built
Layer；P-type nitride semiconductor layer can be the GaN layer of p-type doping.
Step 202：The groove for extending to n-type nitride semiconductor layer is opened up on p-type nitride semiconductor layer.
Step 203：Current barrier layer is formed on p-type nitride semiconductor layer, is provided with current barrier layer and is extended to p-type
The through hole of gallium nitride semiconductor layers and some third through-holes for extending to p-type nitride semiconductor layer.
Alternatively, third through-hole can be cylinder.
Preferably, the cross section of cylinder can be any one in circle, triangle, square, hexagon.
It is highly preferred that the longest distance on the cross section of cylinder between 2 points can be 1~5 μm.
Alternatively, current barrier layer can be using one or more formation in following material：Silica, titanium dioxide
Titanium, silicon nitride.
Step 204：Transparency conducting layer is formed on current barrier layer and p-type nitride semiconductor layer, in transparency conducting layer
It is provided with the through hole connected with the through hole in p-type gallium nitride semiconductor layers.
Specifically, transparency conducting layer can be indium tin oxide layer.
Step 205：Passivation layer is formed on n-type nitride semiconductor layer, the side wall of groove, transparency conducting layer, it is transparent to lead
The through hole connected with the through hole in transparency conducting layer is provided with passivation layer in electric layer, it is logical in the passivation layer on transparency conducting layer
Through hole composition first through hole in through hole, current barrier layer in hole, transparency conducting layer is blunt in n-type nitride semiconductor layer
Change layer and be provided with the second through hole for extending to n-type nitride semiconductor layer.
Specifically, passivation layer can be silicon dioxide layer or silicon nitride layer.
Step 206：P-type electrode is set in first through hole, n-type electrode is set in the second through hole.
Specifically, p-type electrode can include stack gradually Ni layers, Al layers, Cr layers, Ni layers, Au layers, and n-type electrode can be with
Including Ni layers, Al layers, Cr layers, Ni layers, Au layers stacked gradually.
The embodiment of the present invention avoids electric current directly from the electrically conducting transparent of p-type electrode corresponding region by setting current barrier layer
The longitudinal implanted with p-type nitride semiconductor layer of layer, it is extending transversely to order about electric current, expands light-emitting zone, while being set on current barrier layer
There are some third through-holes for extending to p-type nitride semiconductor layer, the light that current barrier layer lower section sends can be by the 3rd
Through hole is projected, and improves the light extraction efficiency of LED chip, increased the luminosity of LED chip.And preparation method is simple, no
Extra increase making step is needed, cost of implementation is low.
Embodiment three
A kind of preparation method of LED chip is the embodiment of the invention provides, is the tool of the preparation method that embodiment two is provided
Body realizes that the preparation method includes：
Step 301：Using Metalorganic Chemical Vapor Deposition on substrate epitaxial growth N-shaped nitride-based semiconductor successively
Layer, luminescent layer, p-type nitride semiconductor layer, form epitaxial wafer.
Step 302：Cleaning epitaxial wafer, is opened using photoetching technique and dry etching technology on p-type nitride semiconductor layer
If extending to the groove of n-type nitride semiconductor layer.
Step 303：Using chemical vapour deposition technique on epitaxial wafer cvd silicon dioxide film, and in positive photoresist
Protection under wet etching formed and be covered with the current barrier layer of third through-hole, remove positive photoresist, the cross section of third through-hole
It is 2 μm of circle of diameter.
Step 304：Indium tin oxide films, and the wet etching under the protection of positive photoresist are flashed to using high energy particle
Transparency conducting layer is formed, positive photoresist is removed.
Step 305：It is using chemical vapour deposition technique cvd silicon dioxide film and wet under the protection of negative photoresist
Method corrodes to form passivation layer.
Step 306：Metal film is flashed to using high energy particle, negative photoresist is peeled off and is formed p-type electrode and n-type electrode.
Example IV
A kind of preparation method of LED chip is the embodiment of the invention provides, is the tool of the preparation method that embodiment two is provided
Body realizes that the preparation method includes：
Step 401：Using Metalorganic Chemical Vapor Deposition on substrate epitaxial growth N-shaped nitride-based semiconductor successively
Layer, luminescent layer, p-type nitride semiconductor layer, form epitaxial wafer.
Step 402：Cleaning epitaxial wafer, is opened using photoetching technique and dry etching technology on p-type nitride semiconductor layer
If extending to the groove of n-type nitride semiconductor layer.
Step 403：Using chemical vapour deposition technique on epitaxial wafer cvd silicon dioxide film, and in positive photoresist
Protection under wet etching formed and be covered with the current barrier layer of third through-hole, remove positive photoresist, the cross section of third through-hole
It is hexagon.
Step 404：Indium tin oxide films, and the wet etching under the protection of positive photoresist are flashed to using high energy particle
Transparency conducting layer is formed, positive photoresist is removed.
Step 405：Metal film is flashed to using high energy particle, and wet etching forms p under the protection of positive photoresist
Type electrode and n-type electrode.
Step 406：Using chemical vapour deposition technique cvd nitride silicon thin film, and the dry method under the protection of positive photoresist
Corrosion forms passivation layer.
The embodiments of the present invention are for illustration only, and the quality of embodiment is not represented.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all it is of the invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc. should be included within the scope of the present invention.
Claims (10)
1. a kind of LED chip, the LED chip includes that substrate and the N-shaped nitride for stacking gradually over the substrate are partly led
Body layer, luminescent layer, p-type nitride semiconductor layer, current barrier layer, transparency conducting layer, set on the p-type nitride semiconductor layer
There is a groove for extending to the n-type nitride semiconductor layer, it is the n-type nitride semiconductor layer, the side wall of the groove, described
Transparency conducting layer is provided with passivation layer, and the passivation layer on the transparency conducting layer is provided with and extends to the p-type nitride and partly lead
The first through hole of body layer, p-type electrode is arranged in the first through hole, on the passivation layer in the n-type nitride semiconductor layer
The second through hole for extending to the n-type nitride semiconductor layer is provided with, n-type electrode is arranged in second through hole, its feature
It is that the current barrier layer is provided with some third through-holes for extending to the p-type nitride semiconductor layer.
2. LED chip according to claim 1, it is characterised in that the third through-hole is cylinder.
3. LED chip according to claim 2, it is characterised in that the cross section of the cylinder is circle, triangle, side
Any one in shape, hexagon.
4. LED chip according to claim 3, it is characterised in that most long between 2 points on the cross section of the cylinder
Distance is 1~5 μm.
5. the LED chip according to any one of Claims 1 to 4, it is characterised in that the current barrier layer uses following material
One or more formation in material：Silica, titanium dioxide, silicon nitride.
6. a kind of preparation method of LED chip, the preparation method includes：
Epitaxial growth n-type nitride semiconductor layer, luminescent layer, p-type nitride semiconductor layer successively on substrate；
The groove extended in the n-type nitride semiconductor layer is opened up on the p-type nitride semiconductor layer；
Current barrier layer is formed on the p-type nitride semiconductor layer, is provided with the current barrier layer and is extended to the p-type
The through hole of gallium nitride semiconductor layers；
Transparency conducting layer is formed on the current barrier layer and the p-type nitride semiconductor layer, in the transparency conducting layer
It is provided with the through hole connected with the through hole in the p-type gallium nitride semiconductor layers；
Passivation layer is formed on the n-type nitride semiconductor layer, the side wall of the groove, the transparency conducting layer, it is described
The through hole connected with the through hole in the transparency conducting layer is provided with passivation layer on bright conductive layer, on the transparency conducting layer
The through hole in through hole, the transparency conducting layer in passivation layer, the composition first through hole of the through hole in the current barrier layer, it is described
Passivation layer in n-type nitride semiconductor layer is provided with the second through hole for extending to the n-type nitride semiconductor layer；
P-type electrode is set in the first through hole, n-type electrode is set in second through hole；
Characterized in that, being additionally provided with some threeways for extending to the p-type nitride semiconductor layer on the current barrier layer
Hole.
7. preparation method according to claim 6, it is characterised in that the third through-hole is cylinder.
8. preparation method according to claim 7, it is characterised in that the cross section of the cylinder is circle, triangle, side
Any one in shape, hexagon.
9. preparation method according to claim 8, it is characterised in that most long between 2 points on the cross section of the cylinder
Distance is 1~5 μm.
10. the preparation method according to any one of claim 6~9, it is characterised in that the current barrier layer is using following
One or more formation in material：Silica, titanium dioxide, silicon nitride.
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| CN110165025A (en) * | 2019-03-29 | 2019-08-23 | 华灿光电(苏州）有限公司 | Light-emitting diode chip for backlight unit, light emitting diode and preparation method thereof |
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| CN107331749B (en) * | 2017-05-27 | 2019-06-11 | 华灿光电（浙江）有限公司 | Preparation method of light emitting diode chip |
| CN108133999A (en) * | 2017-12-22 | 2018-06-08 | 湘能华磊光电股份有限公司 | A kind of LED chip structure and preparation method thereof |
| CN110165025A (en) * | 2019-03-29 | 2019-08-23 | 华灿光电(苏州）有限公司 | Light-emitting diode chip for backlight unit, light emitting diode and preparation method thereof |
| CN112385052A (en) * | 2019-10-23 | 2021-02-19 | 安徽三安光电有限公司 | Light emitting diode and manufacturing method thereof |
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| CN106784218B (en) | 2019-10-29 |
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