CN208284493U - A kind of light-emitting diode chip for backlight unit with improvement electrode electromigration ability - Google Patents
A kind of light-emitting diode chip for backlight unit with improvement electrode electromigration ability Download PDFInfo
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- CN208284493U CN208284493U CN201820612660.9U CN201820612660U CN208284493U CN 208284493 U CN208284493 U CN 208284493U CN 201820612660 U CN201820612660 U CN 201820612660U CN 208284493 U CN208284493 U CN 208284493U
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Abstract
The utility model discloses a kind of with the light-emitting diode chip for backlight unit for improving electrode electromigration ability, comprising: light emitting epitaxial layer；It is set to the light-emitting surface side of light emitting epitaxial layer and is located at the P-type electrode of p type island region, and be set to the light-emitting surface side of light emitting epitaxial layer and be located at the N-type electrode of N-type region；The first adhesion layer of the side of P-type electrode is covered, and covers the second adhesion layer of the side of N-type electrode；Cover the passivation layer of the side of the light-emitting surface side exposed surface of light emitting epitaxial layer, the side of the first adhesion layer and the second adhesion layer.Technical solution provided by the utility model reduces the area that P-type electrode and N-type electrode are contacted with external environment, improves the ELECTROMIGRATION PHENOMENON of the electrode of light-emitting diode chip for backlight unit, improve the service life of light-emitting diode chip for backlight unit；It will be adhered fixed between electrode and passivation layer respectively by the first adhesion layer and the second adhesion layer, improve the adhesive capacity between electrode and passivation layer, reduce the probability that passivation layer self-electrode side falls off.
Description
Technical field
The utility model relates to LED technology fields, more specifically, are related to a kind of electric with electrode is improved
The light-emitting diode chip for backlight unit of transfer ability.
Background technique
Light emitting diode (English is Light Emitting Diode, abbreviation LED) is one kind of semiconductor diode, it
Luminous energy can be converted electrical energy into, the visible light of various colorss and the infrared and ultraviolet black light such as yellow, green, blue are issued.With little Bai
Vehement light bulb and neon lamp are compared, its low, high reliablity, service life length and conveniently adjusted light emission luminance etc. with operating voltage and electric current
Advantage.
The bluish-green LED chip of small size used in existing aobvious screen mould group mainly includes substrate, N-type semiconductor, active
Area, P-type semiconductor, transparency conducting layer, passivation layer, P-type electrode and N-type electrode.When in use due to aobvious screen mould group, in mould group
LED chip can be chronically under the conditions of reverse blas (usually -5V).The metal layer of composition P-type electrode and N-type electrode is easy inverse
It is hydrolyzed and is precipitated by the steam in air under bias, so that ELECTROMIGRATION PHENOMENON occurs for the electrode of LED chip, so that keeping electrode de-
It falls, dead lamp situation is caused to occur.
Utility model content
In view of this, the present invention provides it is a kind of with improve electrode electromigration ability light-emitting diode chip for backlight unit,
The covering of the side of P-type electrode and N-type electrode is protected by the way that the first adhesion layer, the second adhesion layer and passivation layer are corresponding, is subtracted
The area that small P-type electrode and N-type electrode are contacted with external environment, and then the electromigration for improving the electrode of light-emitting diode chip for backlight unit is existing
As improving the service life of light-emitting diode chip for backlight unit；In addition, by the first adhesion layer and the second adhesion layer respectively by electrode and blunt
Change and be adhered fixed between layer, improve the adhesive capacity between electrode and passivation layer, reduces what passivation layer self-electrode side fell off
Probability.
To achieve the above object, the technical scheme that the utility model is provided is as follows:
A kind of light-emitting diode chip for backlight unit with improvement electrode electromigration ability, comprising:
Light emitting epitaxial layer, the light-emitting surface of the light emitting epitaxial layer include p type island region and N-type region；
It is set to the light-emitting surface side of the light emitting epitaxial layer and is located at the P-type electrode of the p type island region, and be set to institute
It states the light-emitting surface side of light emitting epitaxial layer and is located at the N-type electrode of the N-type region；
The first adhesion layer of the side of the P-type electrode is covered, and covers the second adherency of the side of the N-type electrode
Layer；
And cover the light-emitting surface side exposed surface of the light emitting epitaxial layer, the side of first adhesion layer and described
The passivation layer of the side of second adhesion layer.
Optionally, first adhesion layer and/or second adhesion layer are metal adhesion layers or TiN layer.
Optionally, the metal adhesion layers are Ti layers or Al layers.
Optionally, the thickness range of first adhesion layer and second adhesion layer is 5 angstroms -500 angstroms, including endpoint
Value.
Optionally, the side of first adhesion layer and second adhesion layer is roughening face.
Optionally, the passivation layer is SiO2Passivation layer, SiN passivation layer or Al2O3Passivation layer.
Optionally, the thickness range of the passivation layer is 500 angstroms -5000 angstroms, including endpoint value.
Optionally, the light emitting epitaxial layer includes:
Substrate；
N type semiconductor layer positioned at the one side of substrate surface；
Deviate from the active layer of the one side of substrate positioned at the n type semiconductor layer, the n type semiconductor layer deviates from the lining
Bottom side divides two parts and respectively corresponds the p type island region and the N-type region, and the active layer corresponds to the p type island region；
Deviate from the p type semiconductor layer of the one side of substrate positioned at the active layer；
And deviate from the transparency conducting layer of the one side of substrate positioned at the p type semiconductor layer, the transparency conducting layer tool
There is a hollowed out area, and the P-type electrode is contacted through the hollowed out area with the p type semiconductor layer.
Optionally, the P-type electrode and the N-type electrode include:
Metal contact layer；
And deviate from the bonding wire layer of the light emitting epitaxial layer side positioned at the metal contact layer.
Optionally, the bonding wire layer includes the one or more of following wherein metal layer: Ti layers, Pt layers, Ni layers, Al layers,
Au layers, and the bonding wire layer and external environment contact layer are Au layers.
Compared to the prior art, technical solution provided by the utility model has at least the following advantages:
The utility model provides a kind of with the light-emitting diode chip for backlight unit for improving electrode electromigration ability, comprising: shines
Epitaxial layer, the light-emitting surface of the light emitting epitaxial layer include p type island region and N-type region；It is set to the light-emitting surface one of the light emitting epitaxial layer
Side and the P-type electrode for being located at the p type island region, and be set to the light-emitting surface side of the light emitting epitaxial layer and be located at the N-type
The N-type electrode in area；Cover the first adhesion layer of the side of the P-type electrode, and the covering N-type electrode side it is second viscous
Attached layer；And cover the side and described second of the light-emitting surface side exposed surface of the light emitting epitaxial layer, first adhesion layer
The passivation layer of the side of adhesion layer.
As shown in the above, technical solution provided by the utility model passes through the first adhesion layer, the second adhesion layer and blunt
Change corresponding covers the side of P-type electrode and N-type electrode of layer to protect, reduces P-type electrode and N-type electrode connects with external environment
The area of touching, and then improve the ELECTROMIGRATION PHENOMENON of the electrode of light-emitting diode chip for backlight unit, that improves light-emitting diode chip for backlight unit uses the longevity
Life；In addition, will be adhered fixed between electrode and passivation layer respectively by the first adhesion layer and the second adhesion layer, improve electrode with
Adhesive capacity between passivation layer reduces the probability that passivation layer self-electrode side falls off.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is the embodiments of the present invention, for those of ordinary skill in the art, without creative efforts, also
Other attached drawings can be obtained according to the attached drawing of offer.
Fig. 1 is a kind of structural schematic diagram of light-emitting diode chip for backlight unit provided by the embodiments of the present application；
Fig. 2 is the structural schematic diagram of another light-emitting diode chip for backlight unit provided by the embodiments of the present application；
Fig. 3 is the structural schematic diagram of another light-emitting diode chip for backlight unit provided by the embodiments of the present application；
Fig. 4 a- Fig. 4 h is a kind of manufacturing process corresponding construction signal of light-emitting diode chip for backlight unit provided by the embodiments of the present application
Figure.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
Every other embodiment obtained, fall within the protection scope of the utility model.
As described in background, the bluish-green LED chip of small size used in existing aobvious screen mould group mainly includes lining
Bottom, N-type semiconductor, active area, P-type semiconductor, transparency conducting layer, passivation layer, P-type electrode and N-type electrode.Due to aobvious screen mould group
When in use, the LED chip in mould group can be chronically under the conditions of reverse blas (usually -5V).Form P-type electrode and N-type electricity
The metal layer of pole is easy to be precipitated under reverse blas by the steam hydrolysis in air, so that the electrode of LED chip occurs electromigration and shows
As causing dead lamp situation to occur so that making electrode delamination.
Based on this, the embodiment of the present application provides a kind of light-emitting diode chip for backlight unit with improvement electrode electromigration ability,
The covering of the side of P-type electrode and N-type electrode is protected by the way that the first adhesion layer, the second adhesion layer and passivation layer are corresponding, is subtracted
The area that small P-type electrode and N-type electrode are contacted with external environment, and then the electromigration for improving the electrode of light-emitting diode chip for backlight unit is existing
As improving the service life of light-emitting diode chip for backlight unit；In addition, by the first adhesion layer and the second adhesion layer respectively by electrode and blunt
Change and be adhered fixed between layer, improve the adhesive capacity between electrode and passivation layer, reduces what passivation layer self-electrode side fell off
Probability.To achieve the above object, technical solution provided by the embodiments of the present application is as follows, specifically combines Fig. 1 to Fig. 4 h to the application
The technical solution that embodiment provides is described in detail.
Refering to what is shown in Fig. 1, to be provided by the embodiments of the present application a kind of with the light-emitting diodes for improving electrode electromigration ability
The structural schematic diagram of tube chip, wherein light-emitting diode chip for backlight unit includes:
Light emitting epitaxial layer 100, the light-emitting surface of the light emitting epitaxial layer include p type island region and N-type region；
It is set to the light-emitting surface side of the light emitting epitaxial layer 100 and is located at the P-type electrode 210 of the p type island region, and set
It is placed in the light-emitting surface side of the light emitting epitaxial layer 100 and is located at the N-type electrode 220 of the N-type region；
The first adhesion layer 310 of the side of the P-type electrode 210 is covered, and cover the side of the N-type electrode 220
Second adhesion layer 320；
And cover the side of the light-emitting surface side exposed surface of the light emitting epitaxial layer 100, first adhesion layer 310
With the passivation layer 400 of the side of second adhesion layer 320.
First adhesion layer provided by the embodiments of the present application at least needs to cover the side of P-type electrode, and further, first is viscous
Attached layer can also be covered to P-type electrode away from one side surface of light emitting epitaxial layer, so that the first adhesion layer coats P-type electrode, into
One step reduces P-type electrode bare area and there is the first adhesion layer a hollow out P-type electrode is had away from light emitting epitaxial layer side
There is partial denudation region；Likewise, the second adhesion layer provided by the embodiments of the present application at least needs to cover the side of N-type electrode,
Further, the second adhesion layer can also be covered to N-type electrode away from one side surface of light emitting epitaxial layer, so that the second adhesion layer
N-type electrode is coated, further decreases N-type electrode bare area, and there is the second adhesion layer a hollow out to make N-type electrode away from hair
Light epitaxial layer side has partial denudation region, is not particularly limited to this application, needs to be carried out according to practical application specific
Design.
According to above content, when the first adhesion layer coats P-type electrode and the second adhesion layer cladding N-type electrode, passivation layer
Equally adhesion layer can be completely covered away from one side surface of electrode as the area of adhesion layer increases, this application is not done and is had
Body limitation, needs specifically to be designed according to practical application.
It should be noted that the light-emitting surface side exposed surface of passivation layer covering light emitting epitaxial layer provided by the embodiments of the present application
Specifically: all exposed surfaces of the light-emitting surface side of light emitting epitaxial layer in addition to P-type electrode and N-type electrode occupied area are covered, such as
Light-emitting surface side has groove, then passivation layer covers the groove etc..
Technical solution provided by the embodiments of the present application, it is corresponding by p-type by the first adhesion layer, the second adhesion layer and passivation layer
The covering of the side of electrode and N-type electrode is protected, and reduces the area that P-type electrode and N-type electrode are contacted with external environment, in turn
The ELECTROMIGRATION PHENOMENON for improving the electrode of light-emitting diode chip for backlight unit, improves the service life of light-emitting diode chip for backlight unit；In addition, the application
The adhesion layer and electrode and passivation layer that embodiment provides all have good adhesive attraction, by the first adhesion layer by P-type electrode
It is adhered fixed, and will be adhered fixed between N-type electrode and passivation layer by the second adhesion layer, and then improve electrode with passivation layer
Adhesive capacity between passivation layer reduces the probability that passivation layer self-electrode side falls off.
A kind of structure of light emitting epitaxial layer provided by the embodiments of the present application is specifically described with reference to the accompanying drawing, is referred to
Shown in Fig. 2, for the structural schematic diagram of another light-emitting diode chip for backlight unit provided by the embodiments of the present application, wherein the application is implemented
Example provide the light emitting epitaxial layer 100 include:
Substrate 110；
N type semiconductor layer 120 positioned at 110 1 side surface of substrate；
Deviate from the active layer 130 of 110 side of substrate, the n type semiconductor layer positioned at the n type semiconductor layer 120
120, which divide two parts away from 110 side of substrate, respectively corresponds the p type island region and the N-type region, and the active layer 130 is right
Answer the p type island region；
Deviate from the p type semiconductor layer 140 of 110 side of substrate positioned at the active layer 130；
And deviate from the transparency conducting layer 150 of 110 side of substrate positioned at the p type semiconductor layer 140, it is described
Bright conductive layer 150 has a hollowed out area, and the P-type electrode 210 is through the hollowed out area and the p type semiconductor layer
140 contacts, wherein N-type electrode 220 is contacted with n type semiconductor layer 120 in the part of N-type region.
Transparency conducting layer provided by the embodiments of the present application is provided with a hollowed out area, partly leads so that P-type electrode is contacted to p-type
Body layer can further increase the engagement capacity of P-type electrode contact and p type semiconductor layer, improve the hair of light-emitting diode chip for backlight unit
Optical property.
Further, electrode provided by the embodiments of the present application can be double-layer structure, and setting one forms good with semiconductor layer
The contact layer of good Ohmic contact and one improves the bonding wire layer of subsequent packaging effect, and then improves the performance of light-emitting diode chip for backlight unit.
It is the structural schematic diagram of another light-emitting diode chip for backlight unit of the application, wherein the embodiment of the present application mentions with specific reference to shown in Fig. 3
The light emitting epitaxial layer 100 of the light-emitting diode chip for backlight unit of confession, the first adhesion layer 310, the second adhesion layer 320 and passivation layer 400 with
The corresponding construction that above-mentioned any one embodiment provides is identical, wherein
The P-type electrode 210 and the N-type electrode 220 provided by the embodiments of the present application include:
Metal contact layer 10；
And deviate from the bonding wire layer 20 of 100 side of light emitting epitaxial layer positioned at the metal contact layer 10.
Light-emitting diode chip for backlight unit provided by the embodiments of the present application, metal contact layer mainly make electrode and semiconductor layer shape
At good Ohmic contact, i.e. the metal contact layer of P-type electrode to be formed between P-type electrode and p type semiconductor layer good
Ohmic contact, the metal layer of N-type electrode to form good Ohmic contact between N-type electrode and n type semiconductor layer.And
The setting of bonding wire layer can guarantee that soldering reliability improves in subsequent encapsulation process.
The manufacturing process of light-emitting diode chip for backlight unit provided by the embodiments of the present application is described in detail with reference to the accompanying drawing,
Wherein, shown in Fig. 3 for light-emitting diode chip for backlight unit, a kind of hair provided by the embodiments of the present application for being provided in conjunction with Fig. 4 a- Fig. 4 h
The manufacturing process corresponding construction schematic diagram of luminous diode chip is illustrated.
With reference to shown in Fig. 4 a, a substrate 110 is provided.
Substrate provided by the embodiments of the present application can be for Sapphire Substrate, SiC substrate, Si substrate etc., not to this application
Do concrete restriction.
With reference to shown in Fig. 4 b, n type semiconductor layer 120 is grown on 110 side aufwuchsplate of substrate.
N type semiconductor layer provided by the embodiments of the present application is specifically as follows N-type GaN layer or n type semiconductor layer is other
Material semiconductor layer does not make specifically this application.Wherein, n type semiconductor layer is divided into two parts according to p type island region and N-type region,
It is subsequent can prepare finish p type semiconductor layer after, performed etching along N-type region and finally n type semiconductor layer made to correspond to N-type region
Partial denudation.
With reference to shown in Fig. 4 c, active layer 130 is grown away from 110 1 side surface of substrate in n type semiconductor layer 120.
Light-emitting diode chip for backlight unit provided by the embodiments of the present application can be the bluish-green LED chip of small size, not to this application
Do concrete restriction.In addition, the embodiment of the present application is for the p type island region of LED chip and the difference, same to the shape of LED chip of N-type region
Sample is not specifically limited.
With reference to shown in Fig. 4 d, deviate from 110 1 side surface growing P-type semiconductor layer 140 of substrate in active layer 130.
P type semiconductor layer provided by the embodiments of the present application is specifically as follows p-type GaN layer or p type semiconductor layer is other
Material semiconductor layer does not make specifically this application.It wherein, can be according to p type island region and N-type after preparation finishes p type semiconductor layer
The criteria for classifying in area performs etching the partial denudation for finally n type semiconductor layer being made to correspond to N-type region along N-type region, wherein being etched to
The depth of n type semiconductor layer is not particularly limited.
With reference to shown in Fig. 4 e, transparency conducting layer 150 is formed away from 110 1 side surface of substrate in p type semiconductor layer 140,
In, a hollowed out area is formed on transparency conducting layer 150.
Transparency conducting layer provided by the embodiments of the present application can be transparent for transparent conductive layer, IZO transparency conducting layer, AZO
Conductive layer, NiAu transparency conducting layer etc., are not particularly limited this application.And it provided by the embodiments of the present application transparent leads
The thickness range of electric layer can be 300 angstroms -3000 angstroms, including endpoint value.
With reference to shown in Fig. 4 f, P-type electrode 210, and P-type electrode are formed away from 110 side of substrate in transparency conducting layer 150
210 are contacted by the hollowed out area of transparency conducting layer 150 with p type semiconductor layer 150, and, in pair of n type semiconductor layer 120
Answer the N-type electrode 220 that formation is contacted with n type semiconductor layer 120 at N-type region.
P-type electrode and N-type electrode provided by the embodiments of the present application are duallayered electrode structure, wherein are connect with semiconductor layer
Touching is metal contact layer, and metal contact layer provided by the embodiments of the present application can be Cr layers, Ni layers etc., and metal contact layer
Thickness range can be 5 angstroms -500 angstroms, including endpoint value.
And the bonding wire layer provided by the embodiments of the present application includes the one or more of following wherein metal layer: Ti layers,
Pt layers, Ni layers, Al layers, Au layers, and the bonding wire layer and external environment contact layer are Au layers, i.e., no matter the metal that bonding wire layer includes
Layer is multilayer or single layer, and the metal layer that outermost layer is contacted with external environment is necessarily Au layers, improves light-emitting diode chip for backlight unit
Energy.The thickness range of bonding wire layer provided by the embodiments of the present application can be 5000 angstroms -30000 angstroms, including endpoint value.
With reference to shown in Fig. 4 g, the first adhesion layer 310 is formed in the side of P-type electrode 210, and in the side of N-type electrode 220
Form the second adhesion layer 320.
First adhesion layer provided by the embodiments of the present application and/or second adhesion layer are metal adhesion layers or TiN
Layer.Wherein, the metal adhesion layers provided by the embodiments of the present application can be Ti layers or Al layers.
And the thickness range of first adhesion layer provided by the embodiments of the present application and second adhesion layer be 5 angstroms-
500 angstroms, including endpoint value.
Further, in order to improve adhesiving effect, first adhesion layer provided by the embodiments of the present application and described second
The side of adhesion layer can be roughening face.
With reference to shown in Fig. 4 h, forms a passivation layer 400 and cover the light-emitting surface side exposed surface of light emitting epitaxial layer 100, first
The side of the side of adhesion layer 310 and the second adhesion layer 320.
Passivation layer covering transparency conducting layer provided by the embodiments of the present application is viscous away from the exposed surface of one side of substrate, covering first
The side of attached layer, covering n type semiconductor layer are led at the exposed surface of one side of substrate, covering n type semiconductor layer etching to transparent
The extended surface in electric layer region and the side for covering the second adhesion layer.
In one embodiment of the application, the passivation layer provided by the present application is SiO2Passivation layer, SiN passivation layer or Al2O3
Passivation layer.Wherein, the adhesion layer of material Ti, Al or TiN and material are SiO2, SiN or Al2O3Passivation layer have it is good
Adhesion property, and, the adhesion layer of material Ti, Al or TiN and material be electrode provided by the above embodiment it is same have it is good
Good adhesion property, and then reduce passivation layer self-electrode side and fall off, guarantee the better guard electrode of passivation layer, and prevent electrode
There is ELECTROMIGRATION PHENOMENON.
The thickness range of the passivation layer provided by the embodiments of the present application is 500 angstroms -5000 angstroms, including endpoint value.
The embodiment of the present application provides a kind of with the light-emitting diode chip for backlight unit for improving electrode electromigration ability, comprising: hair
Light epitaxial layer, the light-emitting surface of the light emitting epitaxial layer include p type island region and N-type region；It is set to the light-emitting surface of the light emitting epitaxial layer
Side and the P-type electrode for being located at the p type island region, and be set to the light-emitting surface side of the light emitting epitaxial layer and be located at the N
The N-type electrode in type area；Cover the first adhesion layer of the side of the P-type electrode, and the covering N-type electrode side second
Adhesion layer；And cover the light-emitting surface side exposed surface of the light emitting epitaxial layer, the side of first adhesion layer and described
The passivation layer of the side of two adhesion layers.
As shown in the above, technical solution provided by the embodiments of the present application, by the first adhesion layer, the second adhesion layer and
Passivation layer is corresponding to protect the covering of the side of P-type electrode and N-type electrode, reduces P-type electrode and N-type electrode and external environment
The area of contact, and then improve the ELECTROMIGRATION PHENOMENON of the electrode of light-emitting diode chip for backlight unit, improve the use of light-emitting diode chip for backlight unit
Service life；In addition, will be adhered fixed between electrode and passivation layer respectively by the first adhesion layer and the second adhesion layer, electrode is improved
Adhesive capacity between passivation layer reduces the probability that passivation layer self-electrode side falls off.
The foregoing description of the disclosed embodiments can be realized professional and technical personnel in the field or using originally practical new
Type.Various modifications to these embodiments will be readily apparent to those skilled in the art, and determine herein
The General Principle of justice can be realized in other embodiments without departing from the spirit or scope of the present utility model.Cause
This, the present invention will not be limited to the embodiments shown herein, and is to fit to and principles disclosed herein
The widest scope consistent with features of novelty.
Claims (10)
1. a kind of with the light-emitting diode chip for backlight unit for improving electrode electromigration ability characterized by comprising
Light emitting epitaxial layer, the light-emitting surface of the light emitting epitaxial layer include p type island region and N-type region；
It is set to the light-emitting surface side of the light emitting epitaxial layer and is located at the P-type electrode of the p type island region, and be set to the hair
The light-emitting surface side of light epitaxial layer and the N-type electrode for being located at the N-type region；
The first adhesion layer of the side of the P-type electrode is covered, and covers the second adhesion layer of the side of the N-type electrode；
And cover the side and described second of the light-emitting surface side exposed surface of the light emitting epitaxial layer, first adhesion layer
The passivation layer of the side of adhesion layer.
2. according to claim 1 have the light-emitting diode chip for backlight unit for improving electrode electromigration ability, which is characterized in that institute
It states the first adhesion layer and/or second adhesion layer is metal adhesion layers or TiN layer.
3. according to claim 2 have the light-emitting diode chip for backlight unit for improving electrode electromigration ability, which is characterized in that institute
Stating metal adhesion layers is Ti layers or Al layers.
4. according to claim 1 have the light-emitting diode chip for backlight unit for improving electrode electromigration ability, which is characterized in that institute
The thickness range for stating the first adhesion layer and second adhesion layer is 5 angstroms -500 angstroms, including endpoint value.
5. according to claim 1 have the light-emitting diode chip for backlight unit for improving electrode electromigration ability, which is characterized in that institute
The side for stating the first adhesion layer and second adhesion layer is roughening face.
6. according to claim 1 have the light-emitting diode chip for backlight unit for improving electrode electromigration ability, which is characterized in that institute
Stating passivation layer is SiO2Passivation layer, SiN passivation layer or Al2O3Passivation layer.
7. according to claim 1 have the light-emitting diode chip for backlight unit for improving electrode electromigration ability, which is characterized in that institute
The thickness range for stating passivation layer is 500 angstroms -5000 angstroms, including endpoint value.
8. according to claim 1 have the light-emitting diode chip for backlight unit for improving electrode electromigration ability, which is characterized in that institute
Stating light emitting epitaxial layer includes:
Substrate；
N type semiconductor layer positioned at the one side of substrate surface；
Deviate from the active layer of the one side of substrate positioned at the n type semiconductor layer, the n type semiconductor layer deviates from the substrate one
Side divides two parts and respectively corresponds the p type island region and the N-type region, and the active layer corresponds to the p type island region；
Deviate from the p type semiconductor layer of the one side of substrate positioned at the active layer；
And deviating from the transparency conducting layer of the one side of substrate positioned at the p type semiconductor layer, the transparency conducting layer has one
Hollowed out area, and the P-type electrode is contacted through the hollowed out area with the p type semiconductor layer.
9. according to claim 1 have the light-emitting diode chip for backlight unit for improving electrode electromigration ability, which is characterized in that institute
It states P-type electrode and the N-type electrode includes:
Metal contact layer；
And deviate from the bonding wire layer of the light emitting epitaxial layer side positioned at the metal contact layer.
10. according to claim 9 have the light-emitting diode chip for backlight unit for improving electrode electromigration ability, which is characterized in that
The bonding wire layer includes the one or more of following wherein metal layer: Ti layers, Pt layers, Ni layers, Al layers, Au layers, and the bonding wire
Layer is Au layers with external environment contact layer.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111896856A (en) * | 2020-08-12 | 2020-11-06 | 江西乾照光电有限公司 | System and method for testing electrical performance of chip |
| CN113078247A (en) * | 2021-03-26 | 2021-07-06 | 厦门乾照光电股份有限公司 | Light-emitting diode |
| CN113903841A (en) * | 2021-09-09 | 2022-01-07 | 泉州三安半导体科技有限公司 | Flip-chip light emitting diode |
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2018
- 2018-04-26 CN CN201820612660.9U patent/CN208284493U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111896856A (en) * | 2020-08-12 | 2020-11-06 | 江西乾照光电有限公司 | System and method for testing electrical performance of chip |
| CN113078247A (en) * | 2021-03-26 | 2021-07-06 | 厦门乾照光电股份有限公司 | Light-emitting diode |
| CN113078247B (en) * | 2021-03-26 | 2022-08-09 | 厦门乾照光电股份有限公司 | Light-emitting diode |
| CN113903841A (en) * | 2021-09-09 | 2022-01-07 | 泉州三安半导体科技有限公司 | Flip-chip light emitting diode |
| CN113903841B (en) * | 2021-09-09 | 2023-09-08 | 泉州三安半导体科技有限公司 | Flip-chip light emitting diode |
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