CN106206901A - LED chip and manufacture method thereof - Google Patents
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- CN106206901A CN106206901A CN201610785105.1A CN201610785105A CN106206901A CN 106206901 A CN106206901 A CN 106206901A CN 201610785105 A CN201610785105 A CN 201610785105A CN 106206901 A CN106206901 A CN 106206901A
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- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 230000005611 electricity Effects 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 3
- 238000009826 distribution Methods 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 157
- 229910002601 GaN Inorganic materials 0.000 description 15
- 241000208340 Araliaceae Species 0.000 description 9
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 9
- 235000003140 Panax quinquefolius Nutrition 0.000 description 9
- 235000008434 ginseng Nutrition 0.000 description 9
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention provides a kind of LED chip and manufacture method thereof, described LED chip includes substrate, the n type semiconductor layer being positioned on substrate, luminescent layer, p type semiconductor layer, and the N electrode that is electrically connected with n type semiconductor layer and p type semiconductor layer and P electrode, N-type table top that described LED chip includes being etched to n type semiconductor layer and some N-type electrode grooves, the sidewall of N-type electrode groove and p type semiconductor layer are arranged over the insulating medium layer across N-type electrode groove, it is formed on described insulating medium layer and connects the first transparency conducting layer being electrically connected with n type semiconductor layer bottom N slot electrode, described N-type table top is provided with the first N electrode, the first transparency conducting layer in N-type electrode groove is provided with the second N electrode, first N electrode and the second N electrode are electrically connected with by the first transparency conducting layer.In LED chip of the present invention, electric current distribution is uniform, improves the luminescent properties of LED chip, and increase effectively the area of active layer, improves the luminous efficiency of chip.
Description
Technical field
The present invention relates to semiconductor chip field, particularly relate to a kind of LED chip and manufacture method thereof.
Background technology
Light emitting diode (Light-Emitting Diode, LED) is a kind of semiconductor electronic component that can be luminous.This
Electronic component occurred as far back as 1962, can only send the HONGGUANG of low luminosity in early days, develop other monochromatic versions afterwards, time
The light that can send to today is throughout visible ray, infrared ray and ultraviolet, and luminosity also brings up to suitable luminosity.Owing to it has
Energy-saving and environmental protection, safety, life-span length, low-power consumption, low grade fever, high brightness, light modulation waterproof, miniature, shockproof, easy, light beam are concentrated, are safeguarded
The feature such as easy, can be widely applied to various instruction, show, decorate, the field such as backlight, general lighting.
The structure of conventional LED chip mainly has: transversary and vertical stratification, wherein two electricity of light emitting diode (LED) chip with vertical structure
Pole is respectively in the both sides up and down of LED, and P electrode is in the p-type gallium nitride side of LED epitaxial layer, and N electrode is at the n of LED chip epitaxial layer
Type gallium nitride side so that electric current flows vertically through LED epitaxial layer, the only one of which electrode shading of chip light-emitting face.Transversary
Two electrodes of LED chip are in the same side of LED chip, and P electrode is in the p-type gallium nitride region of LED epitaxial layer, and N electrode is distributed
In the N-shaped gallium nitride region exposed by etching, the P in LED chip and N electrode distribution Unequal distance, cause N-shaped gallium nitride and p
CURRENT DISTRIBUTION in type gallium nitride layer is uneven, thus affects luminous efficiency.
It addition, shown in ginseng Fig. 1, tradition transversing gear LED chip, N electrode divides 81 ', the 82 ' cloth n being exposed by etching
Type GaN region, because epitaxial layer needs etch areas relatively big (whole n-type region), because of P electrode 91 ', 92 ' and N electrode 81 ', 82 '
All being distributed in the exiting surface of LED chip, decline hence in so that go out light effective area, therefore light extraction efficiency is low.
Summary of the invention
It is an object of the invention to provide a kind of LED chip and manufacture method thereof, it can increase the light-emitting area of chip,
Improve luminous efficiency.
To achieve these goals, the technical scheme that the embodiment of the present invention provides is as follows:
A kind of LED chip, described LED chip includes substrate, the n type semiconductor layer that is positioned on substrate, luminescent layer, P-type semiconductor
Layer, and the N electrode that is electrically connected with n type semiconductor layer and p type semiconductor layer and P electrode, described LED chip includes carving
Losing the N-type table top to n type semiconductor layer and some N-type electrode grooves, sidewall and the p type semiconductor layer of N-type electrode groove are arranged over
It is formed with bottom connection N slot electrode on the insulating medium layer of N-type electrode groove, described insulating medium layer and N-type semiconductor
The first transparency conducting layer that layer is electrically connected with, described N-type table top is provided with the first N electrode, and first in N-type electrode groove transparent is led
Electric layer is provided with the second N electrode, the first N electrode and the second N electrode and is electrically connected with by the first transparency conducting layer.
As a further improvement on the present invention, on described p type semiconductor layer, region outside insulating medium layer is provided with
Second transparency conducting layer, described P electrode is positioned on the second transparency conducting layer, by the second transparency conducting layer and p type semiconductor layer
It is electrically connected with.
As a further improvement on the present invention, described N electrode is distributed around P electrode.
As a further improvement on the present invention, described P electrode includes the first P electrode and from the first P electrode horizontal expansion
Second P electrode.
As a further improvement on the present invention, described first N electrode and the second N electrode may be contained within the side of LED chip
Part.
As a further improvement on the present invention, described first N electrode and the second N electrode are equidistantly uniformly arranged with P electrode.
As a further improvement on the present invention, the circular in cross-section of described N-type electrode groove, rectangle, regular polygon or not
Regular shape.
Correspondingly, the manufacture method of a kind of LED chip, it is characterised in that described manufacture method includes:
There is provided a substrate, epitaxial growth n type semiconductor layer, luminescent layer, p type semiconductor layer successively on substrate；
Etching epitaxial layer, to n type semiconductor layer, forms N-type table top and some N-type electrode grooves；
Insulating medium layer is prepared above the sidewall and p type semiconductor layer of N-type electrode groove；
Insulating medium layer prepared the first transparency conducting layer, the first transparency conducting layer cover bottom N slot electrode and with N-type half
Conductor layer is electrically connected with, and on p type semiconductor layer, the second transparency conducting layer is prepared in the region outside insulating medium layer；
N-type table top is prepared the first N electrode, the first transparency conducting layer in N-type electrode groove prepares the second N electrode,
P electrode is prepared on second transparency conducting layer.
As a further improvement on the present invention, the circular in cross-section of described N-type electrode groove, rectangle, regular polygon or not
Regular shape.
Compared with prior art, the invention have the advantages that
N electrode is distributed around P electrode, and electrode structure is symmetrical, when LED chip applies voltage, between N electrode and P electrode
Current direction disperses, it is to avoid in prior art, between electrode, current direction is excessively concentrated, and causes the electricity being injected with in active layer
The situation that current density distributional difference is big, the electric current distribution of active layer is uniform, improves the luminescent properties of LED chip；
Chip bonding point is reasonably distributed, and upside-down mounting eutectic can be used to weld, improve chip reliability；
N electrode region has only etched away N-type table top and N-type electrode slot part, and the active layer in remaining N electrode region still retains, and has
Effect increases the area of active layer, substantially increases the luminous efficiency of chip.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
In having technology to describe, the required accompanying drawing used is briefly described, it should be apparent that, the accompanying drawing in describing below is only this
Some embodiments described in invention, for those of ordinary skill in the art, on the premise of not paying creative work,
Other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the planar structure schematic diagram of LED chip in prior art；
Fig. 2 a, 2b are respectively sectional structure and the plane structural representation of LED chip in first embodiment of the invention；
Fig. 3 a ~ 3e is the preparation method process sequence diagram of LED chip in second embodiment of the invention.
Detailed description of the invention
For the technical scheme making those skilled in the art be more fully understood that in the present invention, real below in conjunction with the present invention
Execute the accompanying drawing in example, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described enforcement
Example is only a part of embodiment of the present invention rather than whole embodiments.Based on the embodiment in the present invention, this area is common
The every other embodiment that technical staff is obtained under not making creative work premise, all should belong to present invention protection
Scope.
The invention discloses a kind of LED chip, it includes substrate, the n type semiconductor layer that is positioned on substrate, luminescent layer, p-type
Semiconductor layer, and the N electrode that is electrically connected with n type semiconductor layer and p type semiconductor layer and P electrode, LED chip includes
It is etched to the N-type table top of n type semiconductor layer and some N-type electrode grooves, sets above the sidewall of N-type electrode groove and p type semiconductor layer
There is the insulating medium layer across N-type electrode groove, insulating medium layer is formed bottom connection N slot electrode and n type semiconductor layer
The first transparency conducting layer being electrically connected with, N-type table top is provided with the first N electrode, on the first transparency conducting layer in N-type electrode groove
It is provided with the second N electrode, the first N electrode and the second N electrode to be electrically connected with by the first transparency conducting layer.
It addition, the region outside insulating medium layer is provided with the second transparency conducting layer, P electrode position on p type semiconductor layer
On the second transparency conducting layer, it is electrically connected with p type semiconductor layer by the second transparency conducting layer.
Correspondingly, the invention also discloses the manufacture method of a kind of LED chip, including:
There is provided a substrate, epitaxial growth n type semiconductor layer, luminescent layer, p type semiconductor layer successively on substrate；
Etching epitaxial layer, to n type semiconductor layer, forms N-type table top and some N-type electrode grooves；
Insulating medium layer is prepared above the sidewall and p type semiconductor layer of N-type electrode groove；
Insulating medium layer prepared the first transparency conducting layer, the first transparency conducting layer cover bottom N slot electrode and with N-type half
Conductor layer is electrically connected with, and on p type semiconductor layer, the second transparency conducting layer is prepared in the region outside insulating medium layer；
N-type table top is prepared the first N electrode, the first transparency conducting layer in N-type electrode groove prepares the second N electrode,
P electrode is prepared on second transparency conducting layer.
Below in conjunction with detailed description of the invention, the invention will be further described.
Shown in ginseng Fig. 2 a, 2b, the LED chip in first embodiment of the invention includes the most successively:
Substrate 10, substrate can be sapphire, Si, SiC, GaN, ZnO etc.；
N type semiconductor layer 20, n type semiconductor layer can be N-type GaN etc.；
Luminescent layer 30, luminescent layer can be GaN, InGaN or InGaN/GaN multiple quantum well active layer etc.；
P type semiconductor layer 40, p type semiconductor layer can be p-type GaN etc.；
P electrode 90 and N electrode 80, P electrode 90 is electrically connected with p type semiconductor layer 40, N electrode 80 and n type semiconductor layer 20 electricity
Property connect.
Wherein, on n type semiconductor layer 20, etching is formed with N-type table top 21, goes back shape on the periphery of the epitaxial layer of LED chip
Becoming to have some N-type electrode grooves 50 being etched to n type semiconductor layer, N electrode region includes N-type mesa region and from N-type table top edge
The region extending and covering N slot electrode 50 around LED chip.
Insulating medium layer 60 is at least located at above the sidewall of N-type electrode groove 50 and p type semiconductor layer 40 across N-type electricity
The region of pole groove 50, as shown in Figure 2 b, region in addition to the bottom of N-type table top 21 and N-type electrode groove 50, the N electrode region is equal
Being provided with insulating medium layer 60, the material of insulating medium layer is selected from SiO2、Si3N4, one or more in SiON etc., this embodiment party
Formula illustrates as a example by one layer of insulating medium layer, multilayer insulation Jie can also be formed by multiple deposition in other embodiments
Matter layer, to improve insulating properties.
First transparency conducting layer 71 is located at above insulating medium layer 60 and the bottom of N-type electrode groove 50, and first transparent leads
Electric layer 71 only with N-type electrode groove 50 bottom n type semiconductor layer 20 be electrically connected with, to turn on each N-type electrode groove 50.
Second transparency conducting layer 72 is positioned at the region above p type semiconductor layer 40 outside insulating medium layer 60, and second is transparent
Conductive layer 72 is the most separately positioned at p type semiconductor layer 40 with the first transparency conducting layer 71.
The first transparency conducting layer and the second transparency conducting layer in present embodiment are transparent conductive layer, real at other
Executing can also be for ZITO, ZIO, GIO, ZTO, FTO, AZO, GZO, In in mode4Sn3O12, the transparency conducting layer such as NiAu.First is saturating
Bright conductive layer and the second transparency conducting layer can be single-layer and transparent conductive layer, it is also possible to for the combination of multi-layer transparent conductive layer.
P electrode 90 is positioned on the second transparency conducting layer 72, and it includes the first P electrode 91 and laterally prolongs from the first P electrode 91
The second P electrode 20 stretched, the first P electrode 91 and the second P electrode 92 are respectively by the second transparency conducting layer 72 and p type semiconductor layer
40 are electrically connected with.
N electrode 80 includes the first N electrode 81 being located on N-type table top 21 and is positioned at bottom N-type electrode groove 50 and with
The second N electrode 82 that one transparency conducting layer 71 is electrically connected with.First N electrode 81 is positioned on N-type table top 21 directly and N-type semiconductor
Layer 20 is electrically connected with, and the second N electrode 82 is positioned at N-type electrode groove 50, and by the first electrically conducting transparent bottom N slot electrode 50
Layer 71 is electrically connected with n type semiconductor layer 20.It addition, the second adjacent N electrode with, between the second N electrode and the first N electrode logical
Cross the first transparency conducting layer 71 to be electrically connected with each other.
(it is electric that a NID places on the 2nd N for P electrode in present embodiment (the first P electrode and the second P electrode) and N electrode
Pole) the combination of one or more that is selected from Ti, Cr, Au, Ni, Al of material.
Shown in ginseng Fig. 2 b, the N electrode 80 in present embodiment is distributed around P electrode 90, wherein, and the first N electrode 81 and the
Two N electrode 82 may be contained within the lateral section of LED chip, and the first N electrode 81 is positioned at the side of LED chip, and the second N electrode 82 exists
The both sides of the first N electrode 81 are uniformly distributed along the periphery of LED chip.P electrode includes the first P electrode 91 and lengthwise open of circle
The second P electrode 92, the first N electrode 81 and the second N electrode 82 are equidistantly uniformly arranged with P electrode 90.
N electrode in present embodiment is distributed around P electrode, when this LED chip applies voltage, between N electrode and P electrode
Current direction dispersion, it is to avoid in prior art, between electrode, current direction is excessively concentrated, and causes being injected with in active layer
The situation that electric current distribution difference is big, the electric current distribution of active layer is uniform, improves the luminescent properties of LED chip.
It addition, N electrode region has only etched away N-type table top and N-type electrode slot part, the active layer in remaining N electrode region
Still retain, increase effectively the area of active layer, substantially increase the luminous efficiency of chip.
It should be appreciated that in present embodiment, the circular in cross-section of N-type electrode groove is arranged, in other embodiments
The cross section of N-type electrode groove can also be rectangle, regular polygon or irregularly shaped etc., illustrates the most one by one
Bright.
Ginseng Fig. 3 a ~ 3e also combines shown in Fig. 2 b, and in second embodiment of the invention, the manufacture method of LED chip, specifically wraps
Include following steps:
Shown in ginseng Fig. 3 a, it is provided that a substrate 10, the most successively epitaxial growth n type semiconductor layer 20, luminescent layer 30, p-type
Semiconductor layer 40, it is preferable that in present embodiment, substrate 10 is Sapphire Substrate, n type semiconductor layer 20 is N-type GaN, luminescent layer
30 is InGaN/GaN multiple quantum well active layer, and p type semiconductor layer 40 is p-type GaN；
Shown in ginseng Fig. 3 b, etching epitaxial layer, to n type semiconductor layer, forms N-type table top 21 and some N-type electrode grooves 50；
Shown in ginseng Fig. 3 c, above the sidewall and p type semiconductor layer of N-type electrode groove 50, prepare insulating medium layer 60, dielectric
Layer is selected from SiO2、Si3N4, one or more in SiON etc.；
Shown in ginseng Fig. 3 d, preparing the first transparency conducting layer 71 on insulating medium layer 60, the first transparency conducting layer 71 covers N electricity
It is electrically connected with bottom pole groove 50 and with n type semiconductor layer 20, region system outside insulating medium layer 60 on p type semiconductor layer 40
Standby second transparency conducting layer 72, the first transparency conducting layer and the second transparency conducting layer are ITO, ZITO, ZIO, GIO, ZTO, FTO,
AZO、GZO、In4Sn3O12, NiAu etc.；
Ginseng Fig. 3 e also combines shown in Fig. 2 b, prepares the first N electrode 81 on N-type table top 21, and first in N-type electrode groove 50 is saturating
Prepare the second N electrode 82 on bright conductive layer 71, the second transparency conducting layer 72 prepared the first P electrode 91 and the second P electrode 92,
P electrode and one or more in Ti, Cr, Au, Ni, Al of N electrode material.
Compared with prior art, the method have the advantages that
N electrode is distributed around P electrode, and electrode structure is symmetrical, when LED chip applies voltage, between N electrode and P electrode
Current direction disperses, it is to avoid in prior art, between electrode, current direction is excessively concentrated, and causes the electricity being injected with in active layer
The situation that current density distributional difference is big, the electric current distribution of active layer is uniform, improves the luminescent properties of LED chip；
Chip bonding point is reasonably distributed, and upside-down mounting eutectic can be used to weld, improve chip reliability；
N electrode region has only etched away N-type table top and N-type electrode slot part, and the active layer in remaining N electrode region still retains, and has
Effect increases the area of active layer, substantially increases the luminous efficiency of chip.
It is obvious to a person skilled in the art that the invention is not restricted to the details of above-mentioned one exemplary embodiment, Er Qie
In the case of the spirit or essential attributes of the present invention, it is possible to realize the present invention in other specific forms.Therefore, no matter
From the point of view of which point, all should regard embodiment as exemplary, and be nonrestrictive, the scope of the present invention is by appended power
Profit requires rather than described above limits, it is intended that all by fall in the implication of equivalency and scope of claim
Change is included in the present invention.Should not be considered as limiting involved claim by any reference in claim.
Although moreover, it will be appreciated that this specification is been described by according to embodiment, but the most each embodiment only wraps
Containing an independent technical scheme, this narrating mode of description is only that for clarity sake those skilled in the art should
Description can also be formed those skilled in the art through appropriately combined as an entirety, the technical scheme in each embodiment
May be appreciated other embodiments.
Claims (9)
1. a LED chip, described LED chip includes substrate, and the n type semiconductor layer that is positioned on substrate, luminescent layer, p-type are partly led
Body layer, and the N electrode that is electrically connected with n type semiconductor layer and p type semiconductor layer and P electrode, it is characterised in that described
N-type table top that LED chip includes being etched to n type semiconductor layer and some N-type electrode grooves, sidewall and the p-type of N-type electrode groove are partly led
Body layer is arranged over the insulating medium layer across N-type electrode groove, described insulating medium layer is formed bottom connection N slot electrode
The first transparency conducting layer being electrically connected with n type semiconductor layer, described N-type table top is provided with the first N electrode, in N-type electrode groove
The first transparency conducting layer be provided with the second N electrode, the first N electrode and the second N electrode and electrically connected by the first transparency conducting layer
Connect.
LED chip the most according to claim 1, it is characterised in that on described p type semiconductor layer outside insulating medium layer
Region be provided with the second transparency conducting layer, described P electrode is positioned on the second transparency conducting layer, by the second transparency conducting layer with
P type semiconductor layer is electrically connected with.
LED chip the most according to claim 1, it is characterised in that described N electrode is distributed around P electrode.
LED chip the most according to claim 3, it is characterised in that described P electrode includes the first P electrode and from a P electricity
Second P electrode of pole horizontal expansion.
LED chip the most according to claim 3, it is characterised in that described first N electrode and the second N electrode may be contained within
The lateral section of LED chip.
LED chip the most according to claim 5, it is characterised in that described first N electrode and the second N electrode and P electrode etc.
Away from being uniformly arranged.
LED chip the most according to claim 1, it is characterised in that the circular in cross-section of described N-type electrode groove, rectangle,
Regular polygon or irregularly shaped.
8. the manufacture method of the LED chip according to any one of a claim 1 ~ 7, it is characterised in that described manufacture method
Including:
There is provided a substrate, epitaxial growth n type semiconductor layer, luminescent layer, p type semiconductor layer successively on substrate；
Etching epitaxial layer, to n type semiconductor layer, forms N-type table top and some N-type electrode grooves；
Insulating medium layer is prepared above the sidewall and p type semiconductor layer of N-type electrode groove；
Insulating medium layer prepared the first transparency conducting layer, the first transparency conducting layer cover bottom N slot electrode and with N-type half
Conductor layer is electrically connected with, and on p type semiconductor layer, the second transparency conducting layer is prepared in the region outside insulating medium layer；
N-type table top is prepared the first N electrode, the first transparency conducting layer in N-type electrode groove prepares the second N electrode,
P electrode is prepared on second transparency conducting layer.
The manufacture method of LED chip the most according to claim 8, it is characterised in that the cross section of described N-type electrode groove in
Circle, rectangle, regular polygon or irregularly shaped.
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| CN201610785105.1A CN106206901A (en) | 2016-08-31 | 2016-08-31 | LED chip and manufacture method thereof |
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| CN201610785105.1A CN106206901A (en) | 2016-08-31 | 2016-08-31 | LED chip and manufacture method thereof |
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Cited By (5)
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| CN108429583A (en) * | 2018-05-25 | 2018-08-21 | 南京艾凯特光电科技有限公司 | visible light wireless duplex communication device |
| CN110062962A (en) * | 2016-12-07 | 2019-07-26 | 日机装株式会社 | Optical semiconductor device |
| CN111192945A (en) * | 2020-02-19 | 2020-05-22 | 佛山市国星半导体技术有限公司 | Ultraviolet LED chip and manufacturing method thereof |
| CN112635633A (en) * | 2020-12-31 | 2021-04-09 | 深圳第三代半导体研究院 | Light emitting diode and method for manufacturing the same |
| CN112635632A (en) * | 2020-12-31 | 2021-04-09 | 深圳第三代半导体研究院 | Light emitting diode and method for manufacturing the same |
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| CN112635633A (en) * | 2020-12-31 | 2021-04-09 | 深圳第三代半导体研究院 | Light emitting diode and method for manufacturing the same |
| CN112635632A (en) * | 2020-12-31 | 2021-04-09 | 深圳第三代半导体研究院 | Light emitting diode and method for manufacturing the same |
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