CN110176470A - A kind of high-voltage LED and preparation method thereof - Google Patents
A kind of high-voltage LED and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000004065 semiconductor Substances 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 7
- 238000001459 lithography Methods 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000005275 alloying Methods 0.000 claims description 2
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 claims 1
- 238000000605 extraction Methods 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 4
- 239000007769 metal material Substances 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000009738 saturating Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- General Physics & Mathematics (AREA)
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Abstract
The invention discloses a kind of high-voltage LEDs and preparation method thereof, in the structure of high-voltage LED, it include transparent insulating layer, the part of transparent current extending and transparency conducting layer between adjacent light emitting structure, since transparent insulating layer, the part of transparent current extending and transparency conducting layer are light-permeable structure, and then the side lighting area of light emitting structure is increased, improve the light extraction efficiency of high-voltage LED；And transparency conducting layer provided by the invention is in contact with transparent current extending, and transparency conducting layer is metal material, and then can reduce the resistance of transparent current extending, improves current expansion effect, further increases the light extraction efficiency of high-voltage LED.
Description
Technical field
The present invention relates to technical field of semiconductor device, more specifically, be related to a kind of high-voltage LED and its
Production method.
Background technique
Light emitting diode (Light Emitting Diode, LED) is a kind of semi-conductor electricity for converting electrical energy into luminous energy
Sub- device.When the current flows, electronics and hole are compound in it and issue light.LED is new as a kind of efficient, environmental protection, green
Type solid-state lighting light source has many advantages, such as low-voltage, low-power consumption, small in size, light-weight, long service life, high reliability, just
In being widely used in each field；Such as traffic lights, automobile interior exterior lamp, landscape light in city, cell phone back light source, display screen
Etc., especially in lighting area, high-power chip is the following LED development trend.
In field of semiconductor illumination, the peripheral circuit how to break through the prior art and be further simplified light emitting diode is set
Meter, simplify manufacture craft, be those skilled in the art's technical problem urgently to be solved, then high-voltage LED meet the tendency of and
It is raw.The advantage of high-voltage LED is can be so that the periphery circuit design of encapsulation making chip by manufacture craft
When complete, achieve the purpose that peripheral circuits design and simplify manufacture craft.But existing high-voltage LED go out
Light efficiency is lower.
Summary of the invention
In view of this, effectively solving the prior art the present invention provides a kind of high-voltage LED and preparation method thereof
Present in technical problem, improve the light extraction efficiency of high-voltage LED.
To achieve the above object, technical solution provided by the invention is as follows:
A kind of high-voltage LED, comprising:
Epitaxial structure, the substrate and epitaxial wafer that the epitaxial structure is sequentially overlapped, the epitaxial wafer include from the substrate
Act the first kind semiconductor layer, active layer and Second Type semiconductor layer for being sequentially overlapped growth；Wherein, the epitaxial wafer segmentation
For the first light emitting structure to N light emitting structure, and the exposed first kind semiconductor layer is formed on each light emitting structure
Stepped region, wherein the stepped region of the i-th light emitting structure is located at i-th light emitting structure towards i+1 light emitting structure side, and
The stepped region of the i+1 light emitting structure is located at the i+1 light emitting structure away from i-th light emitting structure side, and N is not small
In 2 integer, i is less than the positive integer of N；
Interface channel positioned at the i+1 light emitting structure towards i-th light emitting structure side is covered with transparent insulation
Layer；
It is formed with transparency conducting layer positioned at the surface of the insulative transparent layer, the transparency conducting layer includes at least one layer of saturating
Bright metallic sub-layer, and described transparency conducting layer one end extends and contacts at the stepped region of i-th light emitting structure and the other end prolongs
It stretches and is contacted with the Second Type semiconductor layer of the i+1 light emitting structure；
Second Type semiconductor layer positioned at the light emitting structure is formed with transparent current expansion away from the one side of substrate
Layer, and transparent current extending accordingly at the i+1 light emitting structure, also extend over the i+1 light emitting structure direction
The surface of the side edge transparency conducting layer of i-th light emitting structure；
Transparent current extending is formed with first away from the one side of substrate accordingly at first light emitting structure
Electrode, and second electrode is formed on the stepped region of the N light emitting structure.
Optionally, the transparent metal sublayer is nickel layer or layer gold.
Optionally, the transparency conducting layer includes the first transparent metal sublayer being sequentially overlapped and the second transparent metal
Layer, wherein the first transparent metal sublayer is the nickel layer, and the second transparent metal sublayer is the layer gold.
Optionally, the transparency conducting layer includes multiple transparent metal sublayers, wherein is closed between adjacent transparent metallic sub-layer
Aurification.
Optionally, the thickness range of the transparent metal sublayer is 5nm-20nm, including endpoint value.
Optionally, the transparent current extending is indium tin oxide layer.
Optionally, the transparent insulating layer is silicon dioxide layer.
Optionally, the first kind semiconductor layer is n type semiconductor layer and the Second Type semiconductor layer is p-type
Semiconductor layer.
Correspondingly, the present invention also provides a kind of production methods of high-voltage LED, comprising:
An epitaxial structure, the substrate and epitaxial wafer that the epitaxial structure is sequentially overlapped are provided, the epitaxial wafer includes from institute
It states substrate and acts the first kind semiconductor layer, active layer and Second Type semiconductor layer for being sequentially overlapped growth；
The epitaxial wafer is divided into the first light emitting structure to N light emitting structure, and is formed on each light emitting structure naked
Reveal the stepped region of the first kind semiconductor layer, wherein the stepped region of the i-th light emitting structure is located at i-th light emitting structure court
To i+1 light emitting structure side, and the stepped region of the i+1 light emitting structure is located at the i+1 light emitting structure away from described
I-th light emitting structure side, N are the integer not less than 2, and i is less than the positive integer of N；
Interface channel in the i+1 light emitting structure towards i-th light emitting structure side covers transparent insulating layer；
Transparency conducting layer is formed on the surface of the insulative transparent layer, the transparency conducting layer includes at least one layer of transparent gold
Belong to sublayer, and described transparency conducting layer one end extend with contacted at the stepped region of i-th light emitting structure and the other end extend and
The Second Type semiconductor layer of the i+1 light emitting structure contacts；
Transparent current extending is formed away from the one side of substrate in the Second Type semiconductor layer of the light emitting structure, and
Transparent current extending accordingly at the i+1 light emitting structure, also extends over the i+1 light emitting structure towards described
The surface of the side edge transparency conducting layer of i light emitting structure；
Transparent current extending deviates from one side of substrate formation first electrode accordingly at first light emitting structure,
And second electrode is formed on the stepped region of the N light emitting structure.
Optionally, the epitaxial wafer is divided into the first light emitting structure to N light emitting structure are as follows:
The epitaxial wafer is divided into the first light emitting structure to N light emitting structure by lithography and etching technique.
Compared to the prior art, technical solution provided by the invention has at least the following advantages:
The present invention provides a kind of high-voltage LEDs and preparation method thereof, in the structure of high-voltage LED,
It include transparent insulating layer, the part of transparent current extending and transparency conducting layer between adjacent light emitting structure, due to transparent exhausted
Edge layer, the part of transparent current extending and transparency conducting layer are light-permeable structure, and then increase the side of light emitting structure
Lighting area improves the light extraction efficiency of high-voltage LED；And transparency conducting layer provided by the invention and transparent electric current
Extension layer is in contact, and transparency conducting layer is metal material, and then can reduce the resistance of transparent current extending, improves electric current
Effect is extended, the light extraction efficiency of high-voltage LED is further increased.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of structural schematic diagram of high-voltage LED provided by the embodiments of the present application；
Fig. 2 is a kind of flow chart of the production method of high-voltage LED provided by the embodiments of the present application；
Fig. 3 to Fig. 8 be Fig. 2 in each step to structural schematic diagram.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
As described in background, in field of semiconductor illumination, how to break through the prior art and be further simplified luminous two
The periphery circuit design of pole pipe simplifies manufacture craft, is those skilled in the art's technical problem urgently to be solved, then high pressure
Optical diode comes into being.The advantage of high-voltage LED is can be so that the peripheral circuit encapsulated by manufacture craft
Design is completed when making chip, is achieved the purpose that peripheral circuits design and is simplified manufacture craft.But existing high pressure
The light extraction efficiency of light emitting diode is lower.
Based on this, the embodiment of the present application provides a kind of high-voltage LED and preparation method thereof, effectively solves existing
Technical problem present in technology improves the light extraction efficiency of high-voltage LED.To achieve the above object, the application is implemented
The technical solution that example provides is as follows, specifically Fig. 1 to Fig. 8 is combined to carry out detailed retouch to technical solution provided by the embodiments of the present application
It states.
Refering to what is shown in Fig. 1, being a kind of structural schematic diagram of high-voltage LED provided by the embodiments of the present application, wherein
High-voltage LED includes:
Epitaxial structure, the substrate 100 and epitaxial wafer that the epitaxial structure is sequentially overlapped, the epitaxial wafer include from the lining
Act the first kind semiconductor layer 210, active layer 220 and Second Type semiconductor layer 230 for being sequentially overlapped growth in bottom；Wherein, institute
It states epitaxial wafer and is divided into the first light emitting structure to N light emitting structure, and be formed with exposed described first on each light emitting structure
The stepped region 211 of type semiconductor layer 210, wherein the stepped region 211 of the i-th light emitting structure is located at the i-th light emitting structure direction
I+1 light emitting structure side, and the stepped region of the i+1 light emitting structure is located at the i+1 light emitting structure away from described i-th
Light emitting structure side, N are the integer not less than 2, and i is less than the positive integer of N；
Interface channel positioned at the i+1 light emitting structure towards i-th light emitting structure side is covered with transparent insulation
Layer 300；
It is formed with transparency conducting layer 400 positioned at the surface of the insulative transparent layer 300, the transparency conducting layer 400 includes
At least one layer of transparent metal sublayer, and described transparency conducting layer one end extends and connects at the stepped region 211 of i-th light emitting structure
Touching and other end extension are contacted with the Second Type semiconductor layer 230 of the i+1 light emitting structure；
Second Type semiconductor layer 230 positioned at the light emitting structure is formed with transparent electricity away from 100 side of substrate
Extension layer 500, and transparent current extending 500 accordingly at the i+1 light emitting structure are flowed, the i+1 is also extended over
Light emitting structure towards i-th light emitting structure side edge transparency conducting layer 400 surface；
Transparent current extending 500 away from the one side of substrate is formed with the accordingly at first light emitting structure
One electrode 610, and second electrode 620 is formed on the stepped region 211 of the N light emitting structure.
As shown in the above, technical solution provided by the embodiments of the present application, in the structure of high-voltage LED, phase
It include transparent insulating layer, the part of transparent current extending and transparency conducting layer between adjacent light emitting structure, due to transparent insulation
Layer, the part of transparent current extending and transparency conducting layer are light-permeable structure, and then the side for increasing light emitting structure goes out
Light area improves the light extraction efficiency of high-voltage LED；And transparency conducting layer provided by the embodiments of the present application with it is transparent
Current extending is in contact, and transparency conducting layer is metal material, and then can reduce the resistance of transparent current extending, improves
Current expansion effect further increases the light extraction efficiency of high-voltage LED.
Refering to what is shown in Fig. 2, be a kind of flow chart of the production method of high-voltage LED provided by the embodiments of the present application,
Wherein, the production method of high-voltage LED provided by the embodiments of the present application, comprising:
S1, an epitaxial structure, the substrate and epitaxial wafer that the epitaxial structure is sequentially overlapped are provided, the epitaxial wafer includes certainly
The substrate acts the first kind semiconductor layer, active layer and Second Type semiconductor layer for being sequentially overlapped growth；
S2, the epitaxial wafer is divided into the first light emitting structure to N light emitting structure, and is formed on each light emitting structure
The stepped region of the exposed first kind semiconductor layer, wherein the stepped region of the i-th light emitting structure is located at i-th light emitting structure
Towards i+1 light emitting structure side, and the stepped region of the i+1 light emitting structure is located at the i+1 light emitting structure away from institute
The i-th light emitting structure side is stated, N is the integer not less than 2, and i is less than the positive integer of N；
S3, the interface channel in the i+1 light emitting structure towards i-th light emitting structure side cover transparent insulation
Layer；
S4, transparency conducting layer is formed on the surface of the insulative transparent layer, the transparency conducting layer includes at least one layer of saturating
Bright metallic sub-layer, and described transparency conducting layer one end extends and contacts at the stepped region of i-th light emitting structure and the other end prolongs
It stretches and is contacted with the Second Type semiconductor layer of the i+1 light emitting structure；
S5, transparent current expansion is formed away from the one side of substrate in the Second Type semiconductor layer of the light emitting structure
Layer, and transparent current extending accordingly at the i+1 light emitting structure, also extend over the i+1 light emitting structure direction
The surface of the side edge transparency conducting layer of i-th light emitting structure；
S6, transparent current extending is electric away from one side of substrate formation first accordingly at first light emitting structure
Pole, and second electrode is formed on the stepped region of the N light emitting structure.
The embodiment of the present application is mentioned below with reference to each step of the production method of high-voltage LED corresponding specific structure
The technical solution of confession is described in more detail.Wherein, Fig. 3 to Fig. 8 is each corresponding structural schematic diagram of step in Fig. 2, is needed
Illustrate, is illustrated so that N is 3 as an example below the application.
As shown in figure 3, corresponding step S1, provides an epitaxial structure, the substrate 100 that the epitaxial structure is sequentially overlapped and outer
Prolong piece 200, the epitaxial wafer 200 includes the first kind semiconductor layer 210 for being sequentially overlapped growth from the substrate 100, has
Active layer 220 and Second Type semiconductor layer 230.
In one embodiment of the application, the substrate provided by the present application can be Sapphire Substrate, not to this application
Do concrete restriction.
And the first kind semiconductor layer provided by the embodiments of the present application can be n type semiconductor layer and described the
Two type semiconductor layers are p type semiconductor layer.Wherein, first kind semiconductor layer and Second Type provided by the embodiments of the present application
The material of semiconductor layer all can be GaN.
As shown in figure 4, corresponding step S2, is divided into the first light emitting structure to N light emitting structure for the epitaxial wafer 200
(the first light emitting structure S1 to third light emitting structure S3) in as shown, and the exposed first kind is formed on each light emitting structure
The stepped region 211 of type semiconductor layer 210, wherein the stepped region 211 of the i-th light emitting structure is located at i-th light emitting structure towards the
I+1 light emitting structure side, and 211 domain of stepped region of the i+1 light emitting structure is located at the i+1 light emitting structure away from described
I-th light emitting structure side, N are the integer not less than 2, and i is less than the positive integer of N.
Specifically, by taking the second light emitting structure S2 and third light emitting structure S3 as an example, the second light emitting structure and third light-emitting junction
Structure is respectively formed on the stepped region 211 of exposed first kind semiconductor layer 210, wherein the stepped region 211 of the second light emitting structure S2
It is located at third towards the third side light emitting structure S3 and the stepped region 211 of third light emitting structure S3 positioned at the second light emitting structure S2
Light emitting structure S3 deviates from the second side light emitting structure S2.
In one embodiment of the application, the epitaxial wafer is divided into the first light emitting structure to N light emitting structure by the application
It can be with are as follows: the epitaxial wafer is divided into N light emitting structure by the first light emitting structure by lithography and etching technique.Wherein, have
Epitaxial wafer can be divided into the first light emitting structure to N light emitting structure for Twi-lithography and etching technics by body, that is, pass through first
Secondary lithography and etching technique forms the isolated groove of exposed first kind semiconductor layer；Then, second is carried out to the isolated groove
Isolated groove is formed the slot segmentation of exposed substrate by secondary lithography and etching technique, and epitaxial wafer is divided into the first light emitting structure extremely
N light emitting structure, and the part of remaining exposed first kind semiconductor layer is stepped region at isolated groove.
Optionally, etched portions use dry etch process, tool in lithography and etching technique provided by the embodiments of the present application
Body can be plasma etch process.
As shown in figure 5, corresponding step S3, in the i+1 light emitting structure towards the connection of i-th light emitting structure side
Channel covers transparent insulation 300.
In one embodiment of the application, the transparent insulating layer provided by the present application is silicon dioxide layer, wherein by saturating
Bright insulating layer covers interface channel, and then avoids the occurrence of drain conditions.
As shown in fig. 6, corresponding step S4, forms transparency conducting layer 400 on the surface of the insulative transparent layer 300, it is described
Transparency conducting layer 400 includes at least one layer of transparent metal sublayer, and 400 one end of the transparency conducting layer extends and i-th hair
Contact and the other end extend at the stepped region 211 of photo structure connects with the Second Type semiconductor layer 230 of the i+1 light emitting structure
Touching.
In one embodiment of the application, the transparent metal sublayer provided by the present application is nickel layer or layer gold.
Optionally, the transparency conducting layer provided by the embodiments of the present application includes the first transparent metal sublayer being sequentially overlapped
With the second transparent metal sublayer, wherein the first transparent metal sublayer is the nickel layer, and the second transparent metal sublayer is
The layer gold.Layer gold is formed due to being initially formed after nickel layer, guarantees that the adhesiveness of transparency conducting layer and contact structures is stronger.
Further, the transparency conducting layer provided by the embodiments of the present application includes multiple transparent metal sublayers, wherein phase
Alloying between adjacent transparent metal sublayer.
In one embodiment of the application, the thickness range of the transparent metal sublayer provided by the present application is 5nm-20nm,
Including endpoint value.
As shown in fig. 7, corresponding step S5, deviates from the substrate in the Second Type semiconductor layer 230 of the light emitting structure
100 sides form transparent current extending 500, and transparent current extending 500 accordingly at the i+1 light emitting structure, also
Extend over the i+1 light emitting structure towards i-th light emitting structure side edge transparency conducting layer 400 surface；
In one embodiment of the application, the transparent current extending provided by the present application is indium tin oxide layer.
As shown in figure 8, corresponding step S6, corresponding transparent current extending 500 is carried on the back at the first light emitting structure S1
First electrode 610, and the step in the N light emitting structure (such as third light emitting structure S3) are formed from 100 side of substrate
Second electrode 620 is formed in area 211.
The embodiment of the present application provides a kind of high-voltage LED and preparation method thereof, in the knot of high-voltage LED
It include transparent insulating layer, the part of transparent current extending and transparency conducting layer between adjacent light emitting structure, due to saturating in structure
Bright insulating layer, the part of transparent current extending and transparency conducting layer are light-permeable structure, and then increase light emitting structure
Side lighting area improves the light extraction efficiency of high-voltage LED；And transparency conducting layer provided by the embodiments of the present application
It is in contact with transparent current extending, and transparency conducting layer is metal material, and then can reduce the electricity of transparent current extending
Resistance improves current expansion effect, further increases the light extraction efficiency of high-voltage LED.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (10)
1. a kind of high-voltage LED characterized by comprising
Epitaxial structure, the substrate and epitaxial wafer that the epitaxial structure is sequentially overlapped, the epitaxial wafer include from the substrate according to
First kind semiconductor layer, active layer and the Second Type semiconductor layer of secondary superposition growth；Wherein, the epitaxial wafer is divided into
One light emitting structure is to N light emitting structure, and is formed on each light emitting structure the platform of the exposed first kind semiconductor layer
Rank area, wherein the stepped region of the i-th light emitting structure is located at i-th light emitting structure towards i+1 light emitting structure side, and described
The stepped region of i+1 light emitting structure is located at the i+1 light emitting structure away from i-th light emitting structure side, and N is not less than 2
Integer, i be less than N positive integer；
Interface channel positioned at the i+1 light emitting structure towards i-th light emitting structure side is covered with transparent insulating layer；
It is formed with transparency conducting layer positioned at the surface of the insulative transparent layer, the transparency conducting layer includes at least one layer of transparent gold
Belong to sublayer, and described transparency conducting layer one end extend with contacted at the stepped region of i-th light emitting structure and the other end extend and
The Second Type semiconductor layer of the i+1 light emitting structure contacts；
Second Type semiconductor layer positioned at the light emitting structure is formed with transparent current extending away from the one side of substrate, and
Transparent current extending accordingly at the i+1 light emitting structure, also extends over the i+1 light emitting structure towards described
The surface of the side edge transparency conducting layer of i light emitting structure；
Transparent current extending is formed with first electrode away from the one side of substrate accordingly at first light emitting structure,
And second electrode is formed on the stepped region of the N light emitting structure.
2. high-voltage LED according to claim 1, which is characterized in that the transparent metal sublayer is nickel layer or gold
Layer.
3. high-voltage LED according to claim 2, which is characterized in that the transparency conducting layer includes being sequentially overlapped
The first transparent metal sublayer and the second transparent metal sublayer, wherein the first transparent metal sublayer be the nickel layer, it is described
Second transparent metal sublayer is the layer gold.
4. high-voltage LED according to claim 1, which is characterized in that the transparency conducting layer includes multiple transparent
Metallic sub-layer, wherein alloying between adjacent transparent metallic sub-layer.
5. high-voltage LED according to claim 1, which is characterized in that the thickness range of the transparent metal sublayer
For 5nm-20nm, including endpoint value.
6. high-voltage LED according to claim 1, which is characterized in that the transparent current extending is indium oxide
Tin layers.
7. high-voltage LED according to claim 1, which is characterized in that the transparent insulating layer is silica
Layer.
8. high-voltage LED according to claim 1, which is characterized in that the first kind semiconductor layer is N-type
Semiconductor layer and the Second Type semiconductor layer are p type semiconductor layer.
9. a kind of production method of high-voltage LED characterized by comprising
An epitaxial structure, the substrate and epitaxial wafer that the epitaxial structure is sequentially overlapped are provided, the epitaxial wafer includes from the lining
Act the first kind semiconductor layer, active layer and Second Type semiconductor layer for being sequentially overlapped growth in bottom；
The epitaxial wafer is divided into the first light emitting structure to N light emitting structure, and forms exposed institute on each light emitting structure
State the stepped region of first kind semiconductor layer, wherein the stepped region of the i-th light emitting structure is located at i-th light emitting structure towards i-th
+ 1 light emitting structure side, and the stepped region of the i+1 light emitting structure is located at the i+1 light emitting structure away from i-th hair
Photo structure side, N are the integer not less than 2, and i is less than the positive integer of N；
Interface channel in the i+1 light emitting structure towards i-th light emitting structure side covers transparent insulating layer；
Transparency conducting layer is formed on the surface of the insulative transparent layer, the transparency conducting layer includes at least one layer of transparent metal
Layer, and described transparency conducting layer one end extend with contacted at the stepped region of i-th light emitting structure and the other end extension with it is described
The Second Type semiconductor layer of i+1 light emitting structure contacts；
Transparent current extending is formed away from the one side of substrate in the Second Type semiconductor layer of the light emitting structure, and described
Transparent current extending accordingly at i+1 light emitting structure also extends over the i+1 light emitting structure towards i-th hair
The surface of the side edge transparency conducting layer of photo structure；
At first light emitting structure accordingly transparent current extending away from the one side of substrate formed first electrode, and
Second electrode is formed on the stepped region of the N light emitting structure.
10. the production method of high-voltage LED according to claim 9, which is characterized in that by the epitaxial wafer point
The first light emitting structure is segmented into N light emitting structure are as follows:
The epitaxial wafer is divided into the first light emitting structure to N light emitting structure by lithography and etching technique.
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| CN111725251A (en) * | 2020-07-04 | 2020-09-29 | 厦门友来微电子有限公司 | High-resolution full-color micro LED display |
| CN112164742A (en) * | 2020-09-21 | 2021-01-01 | 厦门三安光电有限公司 | Light-emitting diode |
| CN116864598A (en) * | 2023-07-20 | 2023-10-10 | 深圳市思坦科技有限公司 | Light-emitting chip, preparation method and display device |
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