CN104241508A - White LED chip and manufacturing method - Google Patents
White LED chip and manufacturing method Download PDFInfo
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- CN104241508A CN104241508A CN201410488055.1A CN201410488055A CN104241508A CN 104241508 A CN104241508 A CN 104241508A CN 201410488055 A CN201410488055 A CN 201410488055A CN 104241508 A CN104241508 A CN 104241508A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Abstract
The invention relates to a white LED chip and a manufacturing method. The chip comprises LED crystal grain units distributed in an array mode, the first crystal grain unit and the last crystal grain unit are provided with bonding pads, the space between every two adjacent crystal grain units is filled with insulating materials, electrode bridge connection is conducted on every two adjacent crystal grain units, and the surface, except for the bonding pads, of the whole LED chip is coated with fluorescent glue. The manufacturing method comprises the following steps that (1) a GaN buffer layer and an epitaxial layer grow on a sapphire substrate in sequence; (2) the epitaxial layer is etched until the sapphire substrate, so array distribution of the LED crystal grain units is achieved; (3) an electrode mesa is manufactured on each crystal grain unit; (4) every two adjacent crystal grain units are electrically separated; (5) every two adjacent crystal grain units are electrically connected in series; (6) the bonding pads are manufactured; (7) the surface except for the bonding pads is coated. The luminous efficiency of the chip is increased at least by more than 5%, the manufacturing cost is reduced, refracted light is emitted, and low current and high voltage chip-level LED white light can be obtained directly.
Description
Technical field
The present invention relates to a kind of white light LEDs (Light Emitting Diode, light-emitting diode) chip and preparation method, belong to photoelectron technical field.
Background technology
Along with the fast development of LED application market, the requirement of luminance raising is improved constantly, in order to constantly research and development have the LED chip of more high power, more specular removal, in order to solve the crowding phenomenon of big current, insider turns to the research of small area analysis high voltage LED chip gradually.This kind of LED chip surface is general in array multiple independently LED micromeritics arranged evenly, is in series after being divided into multiple unit by chip area.Its characteristic is, wafer can determine its element number and size according to the demand of different input voltage.Its exclusive small area analysis, many LED grain better can carry out current expansion, make emergent light have higher extraction efficiency.White light LEDs is prepared on this LED chip basis and becomes a kind of new approaches, the acquisition of this novel white-light LED chip is also for the development of illumination market opens a new road.
Chinese patent literature CN103367610A disclosed " a kind of high voltage LED chip and preparation method thereof ", described chip comprises substrate, the resilient coating that substrate is formed successively, N-shaped nitride layer, luminescent layer and p-type nitride layer, described p-type nitride layer is etched with multiple groove, the degree of depth is to N-shaped nitride layer, the subregion of bottom portion of groove is etched with groove again to form spaced crystallite, and the degree of depth is to substrate.The sidewall of groove and adjacent crystallite is provided with passivation layer, and the p-type nitride layer of crystallite is formed with current-diffusion layer; Passivation layer is coated with the conductive layer with adjacent crystallite current-diffusion layer bottom connecting groove, on current-diffusion layer and between adjacent crystallite, is coated with phosphor powder layer.Current-diffusion layer and conductive layer is prepared respectively twice before and after in the method; to realize the electric connection between adjacent crystallite; add processing step; phosphor powder layer also required to increase one deck tackifier at chip surface before formation simultaneously; phosphor powder layer forms layer protective layer after being formed again; add the coating substance number of plies of chip surface, introduce unnecessary light outgoing loss.
CN103236474A disclosed " manufacture method of any cutting type high-voltage LED device ", first by forming the luminescence chip unit of multiple repetition to semiconductor extension structure surface graphics, be etched to substrate surface and form isolation channel, by each luminescence chip subelement isolation; Then form insulating medium layer, then evaporation metal at the sidewall of each luminescence chip subelement, and graphically form p and n-electrode and interconnection line, interconnection line is by luminescence chip subelement electrical interconnection; Finally between luminescence chip subelement, form scribing groove, along scribing groove, substrate and semiconductor extension structure are divided into multiple chip unit, each chip unit comprises the luminescence chip subelement of varying number, is connected between the luminescence chip subelement in chip unit by interconnection line.But the insulating medium layer that the luminous subelement sidewall in the method after isolation is formed; on insulating medium layer, evaporation metal forms interconnection line again; can not play a protective role to not carrying out the luminous subelement sidewall that dielectric covers, being easy to after evaporation metal cause the adverse effects such as leak electricity short-circuit.
In sum, according to existing open source literature, high-voltage chip technology improves the luminous efficiency of LED chip, but existing so-called high pressure white light LEDs is still that the mode adopting high voltage LED chip to add fluorescent powder packaging obtains, or there is the problems such as processing step is complicated with being electrically connected in isolation between die unit.
Summary of the invention
The deficiency that the mode adopting high voltage LED chip to add fluorescent powder packaging for existing white light LEDs exists, the invention provides a kind of White-light LED chip that effectively can improve luminous efficiency, obtain small area analysis high voltage LED white light, a kind of preparation method of said chip is provided simultaneously.This chip solves the problems such as inconsistent, the fluorescent material precipitation of bright dipping that encapsulation process introduces.
White-light LED chip of the present invention, by the following technical solutions:
This White-light LED chip, comprise the LED grain unit in array distribution, between neighboring die unit, isolated groove is set, first die unit and the last die unit arrange bonding welding pad, insulating material is filled with in the isolated groove of neighboring die unit, carry out electrode bridge joint between neighboring die unit, the part outside bonding welding pad is coated with fluorescent glue.
Described insulating material is SiO
2or SiNx (nitride of Si, x is mark or natural number).
Described electrode bridge joint covers layer of transparent conductive oxide between the N electrode table top on the die unit that the P electrode table top of a die unit is adjacent with this die unit (TCO, Transparent Conducting Oxide, as TiO
2, ZnO, ITO, SnO
2in one or more), be electrically connected in series to realize neighboring die unit.
The preparation method of above-mentioned White-light LED chip, comprises the steps:
(1) growing GaN resilient coating and epitaxial loayer successively on a sapphire substrate, epitaxial loayer comprises n-GaN layer, multiple quantum well light emitting layer and p-GaN layer from top to bottom successively;
(2) etch epitaxial loayer to Sapphire Substrate, make epitaxial loayer to be formed the crisscross isolated groove being deep to Sapphire Substrate, realizing LED grain unit is array distribution; Isolated groove is less than the width at multiple quantum well light emitting layer and p-GaN layer at the width of resilient coating and n-GaN layer, and n-GaN layer forms a platform for the preparation of N electrode table top;
(3) on each die unit, prepare P electrode table top and N electrode table top, P electrode table top is prepared in p-GaN layer, and N electrode table top is prepared on n-GaN layer;
(4) the part deposit layer of transparent electrically non-conductive material in the p-GaN layer of the part in isolated groove except N electrode table top and each die unit except P electrode table top, electrically cuts off between neighboring die unit;
Transparent electrically non-conductive material is SiO
2or SiN
x(nitride of Si, x is mark or natural number); The thickness of transparent electrically non-conductive material is 1200-1500 dust.
(5) on the P electrode table top of first die unit and between the N electrode table top of neighboring die unit and P electrode table top, prepare layer of transparent electric conducting material, adjacent die unit is electrically connected in series;
The thickness of transparent conductive material is 2200-3000 dust.
(6) metal material of respectively evaporation a layer thickness 1-2 μm on the P electrode table top of first die unit and on the N electrode table top of the last die unit, as the bonding welding pad of chip package bonding wire;
Metal material is Au or Al of thickness 1-2 μm.
(7) at the whole chip upper surface coating fluorescent glue except the bonding welding pad on first die unit and the last die unit; the surface of part outside coated bonding welding pad; playing passivation layer protection does not on the one hand cause electric leakage bad by outside contamination, can directly prepare chip-scale white light LEDs on the other hand.
The present invention passes through between the LED grain unit in array distribution, fill transparent electrically non-conductive material, for die unit is isolated, and then by using TCO material to be connected in series, effective increase chip surface light-emitting area, finally at chip surface coating fluorescent glue, coating chip is part except bonding welding pad.Compare the mode adopting the opaque electric conducting material of metal to connect die unit, the present invention adopts transparent conductive material to do the mode of electrode bridge joint, chip light emitting efficiency can be made at least to improve more than 5%, and reduce cost of manufacture; The layer of transparent electrically non-conductive material of deposit of the present invention in addition, cover all sidewalls between adjacent two die unit, only exposed last die unit N-type GaN layer certain limit on the surface, for covering transparent conductive material, neighboring die unit is electrically connected, better can carry out sidewall protection to die unit, prevent electric leakage; Last chip surface directly applies fluorescent glue; play passivation layer protection on the one hand not by the effect that outside contamination causes electric leakage bad; reduce one deck passivation layer mask simultaneously and increase refraction bright dipping, importantly directly can prepare chip-scale small area analysis high voltage LED white light.
Accompanying drawing explanation
Fig. 1 is the chip structure schematic diagram after preparing electrode table top in the present invention.
Fig. 2 is the structural representation in the present invention after deposit layer of transparent electrically non-conductive material.
Fig. 3 is the structural representation after covering one deck TCO material in the present invention.
Fig. 4 is the schematic diagram of bonding keyboard after evaporation metal materials A u or Al in the present invention.
Fig. 5 is the structural representation in the present invention after surface-coated fluorescent glue.
In figure, 1, Sapphire Substrate, 2, resilient coating, 3, n-GaN layer, 4, multiple quantum well light emitting layer, 5, p-GaN layer, 6, transparent electrically non-conductive material, 7, transparent conductive material, 8, metal electrode, 9, fluorescent glue.
Embodiment
White-light LED chip of the present invention, comprise the LED grain unit in array distribution, between neighboring die unit, isolated groove is set, first die unit and the last die unit arrange bonding welding pad, insulating material is filled with in the isolated groove of neighboring die unit, carry out electrode bridge joint between neighboring die unit, the part outside bonding welding pad is coated with fluorescent glue.
Above-mentioned White-light LED chip, forms the isolated groove with certain depth by etching epitaxial loayer between die unit, first fills certain thickness SiO in isolated groove to substrate
2or SiNx (nitride of Si, x is mark or natural number) transparent electrically non-conductive material, for die unit is carried out electrical isolation, then between neighboring die unit, carry out N electrode and P electrode bridge joint; The mode of described electrode bridge joint is by growth one deck TCO (Transparent Conducting Oxide, transparent conductive oxide) material, cover on groove between die unit and the contiguous N electrode table top of neighboring die unit and P electrode table top, realize neighboring die unit serial connection; Then evaporation metal electrode on P, N bonding welding pad of chip; Finally in die unit and isolated groove, apply fluorescent glue, coating chip is part except bonding welding pad, obtains a kind of novel white-light LED chip.
The concrete preparation method of above-mentioned White-light LED chip, comprises the steps:
(1) growing GaN resilient coating 2 and epitaxial loayer successively in Sapphire Substrate 1, epitaxial loayer comprises n-GaN layer 3, multiple quantum well light emitting layer 4 and p-GaN layer 5 from top to bottom successively.
(2) (dry etching or wet etching) epitaxial loayer is etched, be deep to the upper surface of Sapphire Substrate 1, form isolated groove, be divided into single led die unit, make all LED grain unit by required array distribution (can see Fig. 1).Isolated groove is widened in n-GaN layer more than 3 position (multiple quantum well light emitting layer 4 and p-GaN layer 5), make isolated groove be less than the width at multiple quantum well light emitting layer 4 and p-GaN layer 5 at the width of resilient coating 2 and n-GaN layer 3, on n-GaN layer, form a platform for the preparation of N electrode table top like this.
(3) on each die unit, prepare P electrode table top and N electrode table top, P electrode table top is prepared in p-GaN layer 5, and N electrode table top is prepared on n-GaN layer 3.
After step (2) and step (3), chip sides structure as shown in Figure 1.
(4) as shown in Figure 2, carrying out insulation filling, is the SiO of 1200-1500 dust by the mode of evaporation or chemical deposition part deposit a layer thickness in the p-GaN layer 5 of the part (comprising bottom surface and side) in isolated groove except the N electrode table top of each die unit and each die unit except P electrode table top
2or SiN
xtransparent electrically non-conductive material 6, electrically cuts off between neighboring die unit.(gap in Fig. 2 in the transparent electrically non-conductive material of indication 6) do not have transparent electrically non-conductive material, to conduct electricity downwards for P electrode table top on each die unit and N electrode table top.By the mode of exposure corrosion, the P of each die unit, N electrode table top are reserved.
(5) N electrode and P electrode bridge joint as shown in Figure 3, is carried out.Specifically on the P electrode table top of first die unit (die unit of the leftmost side is as first die unit in Fig. 2) and between the N electrode table top of neighboring die unit and P electrode table top (between the N electrode table top of a die unit and the P electrode table top of another its adjacent die unit) is by sputter or the mode of electron beam evaporation prepares layer of transparent electric conducting material 7, adjacent die unit is electrically connected in series, and the N electrode table top of the P electrode table top of first die unit and the last die unit is not connected in series with other electrode.The thickness of transparent conductive material (TCO material) 7 is 2200-3000 dust, can be TiO
2, ZnO, ITO, SnO
2in one or more.
(6) as shown in Figure 4, (certain area coverage on P electrode table top is P type bonding region in P type bonding region on the P electrode table top of first die unit, this region is used for the encapsulation bonding wire of later electrode evaporation and later application) and metal material Au or Al of a layer thickness 1-2 μm, N-type bonding region (the whole N electrode table top of this die unit and N-type bonding region) upper difference evaporation (electron beam evaporation) of most end die unit, as the bonding welding pad 8 (bonding welding pad of most end die unit does not draw) of chip package bonding wire.
(7) as shown in Figure 5; directly fluorescent glue is applied at the whole chip upper surface except the bonding welding pad on first die unit and most end die unit; the surface of coated part except bonding welding pad; playing passivation layer protection does not on the one hand cause electric leakage bad by outside contamination, can directly prepare chip-scale white light LEDs on the other hand.
Claims (7)
1. a White-light LED chip, it is characterized in that, comprise the LED grain unit in array distribution, between neighboring die unit, isolated groove is set, first die unit and the last die unit arrange bonding welding pad, be filled with insulating material in the isolated groove of neighboring die unit, carry out electrode bridge joint between neighboring die unit, the part outside bonding welding pad is coated with fluorescent glue.
2. White-light LED chip according to claim 1, is characterized in that, described insulating material is SiO
2or SiNx, x are mark or natural number.
3. White-light LED chip according to claim 1, it is characterized in that, described electrode bridge joint covers layer of transparent conductive oxide between the N electrode table top on the die unit that the P electrode table top of a die unit is adjacent with this die unit, is electrically connected in series to realize neighboring die unit.
4. a preparation method for White-light LED chip described in claim 1, is characterized in that, comprises the steps:
(1) growing GaN resilient coating and epitaxial loayer successively on a sapphire substrate, epitaxial loayer comprises n-GaN layer, multiple quantum well light emitting layer and p-GaN layer from top to bottom successively;
(2) etch epitaxial loayer to Sapphire Substrate, make epitaxial loayer to be formed the crisscross isolated groove being deep to Sapphire Substrate, realizing LED grain unit is array distribution; Isolated groove is less than the width at multiple quantum well light emitting layer and p-GaN layer at the width of resilient coating and n-GaN layer, and n-GaN layer forms a platform for the preparation of N electrode table top;
(3) on each die unit, prepare P electrode table top and N electrode table top, P electrode table top is prepared in p-GaN layer, and N electrode table top is prepared on n-GaN layer;
(4) the part deposit layer of transparent electrically non-conductive material in the p-GaN layer of the part in isolated groove except N electrode table top and each die unit except P electrode table top, electrically cuts off between neighboring die unit;
(5) on the P electrode table top of first die unit and between the N electrode table top of neighboring die unit and P electrode table top, prepare layer of transparent electric conducting material, adjacent die unit is electrically connected in series;
(6) metal material of respectively evaporation a layer thickness 1-2 μm on the P electrode table top of first die unit and on the N electrode table top of the last die unit, as the bonding welding pad of chip package bonding wire;
(7) at the whole chip upper surface coating fluorescent glue except the bonding welding pad on first die unit and the last die unit; the surface of part outside coated bonding welding pad; playing passivation layer protection does not on the one hand cause electric leakage bad by outside contamination, can directly prepare chip-scale white light LEDs on the other hand.
5. the preparation method of White-light LED chip according to claim 4, it is characterized in that, in described step (4), the thickness of transparent electrically non-conductive material is 1200-1500 dust.
6. the preparation method of White-light LED chip according to claim 4, is characterized in that, in described step (5), the thickness of transparent conductive material is 2200-3000 dust.
7. the preparation method of White-light LED chip according to claim 4, is characterized in that, in described step (6), metal material is Au or Al of thickness 1-2 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410488055.1A CN104241508A (en) | 2014-09-22 | 2014-09-22 | White LED chip and manufacturing method |
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|---|---|---|---|
| CN201410488055.1A CN104241508A (en) | 2014-09-22 | 2014-09-22 | White LED chip and manufacturing method |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107909931A (en) * | 2017-12-29 | 2018-04-13 | 西安智盛锐芯半导体科技有限公司 | Virtual LED display module and 6 times of frequency displaying methods based on three vitta shape LED chips |
| CN107946423A (en) * | 2017-12-20 | 2018-04-20 | 西安智盛锐芯半导体科技有限公司 | Tetra- color LED chips of RGBW based on GaN material and preparation method thereof |
| CN108230926A (en) * | 2017-12-29 | 2018-06-29 | 西安智盛锐芯半导体科技有限公司 | Virtual LED display module and 4 times of frequency displaying methods based on four color LED chips |
| CN108230927A (en) * | 2017-12-29 | 2018-06-29 | 西安智盛锐芯半导体科技有限公司 | Virtual LED display module and 3 times of frequency displaying methods based on three vitta shape LED chips |
| CN108564890A (en) * | 2017-12-29 | 2018-09-21 | 西安智盛锐芯半导体科技有限公司 | Virtual LED display module based on three vitta shape LED chips and 6 times of frequency displaying methods |
| CN108987557A (en) * | 2018-07-04 | 2018-12-11 | 佛山市国星半导体技术有限公司 | A kind of flip LED chips and preparation method thereof, LED component |
| CN109560100A (en) * | 2018-11-23 | 2019-04-02 | 江苏新广联半导体有限公司 | A kind of formal dress GaN base LED micro-display device and preparation method thereof |
| CN109643643A (en) * | 2018-11-30 | 2019-04-16 | 长江存储科技有限责任公司 | Bond memory part and its manufacturing method |
| CN110085620A (en) * | 2019-04-30 | 2019-08-02 | 湘能华磊光电股份有限公司 | A kind of microarray integrated LED chip and preparation method thereof |
| CN110176470A (en) * | 2019-05-30 | 2019-08-27 | 厦门乾照光电股份有限公司 | A kind of high-voltage LED and preparation method thereof |
| CN112802953A (en) * | 2020-12-28 | 2021-05-14 | 厦门三安光电有限公司 | Light-emitting diode and preparation method thereof |
-
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- 2014-09-22 CN CN201410488055.1A patent/CN104241508A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107946423A (en) * | 2017-12-20 | 2018-04-20 | 西安智盛锐芯半导体科技有限公司 | Tetra- color LED chips of RGBW based on GaN material and preparation method thereof |
| CN107909931A (en) * | 2017-12-29 | 2018-04-13 | 西安智盛锐芯半导体科技有限公司 | Virtual LED display module and 6 times of frequency displaying methods based on three vitta shape LED chips |
| CN108230926A (en) * | 2017-12-29 | 2018-06-29 | 西安智盛锐芯半导体科技有限公司 | Virtual LED display module and 4 times of frequency displaying methods based on four color LED chips |
| CN108230927A (en) * | 2017-12-29 | 2018-06-29 | 西安智盛锐芯半导体科技有限公司 | Virtual LED display module and 3 times of frequency displaying methods based on three vitta shape LED chips |
| CN108564890A (en) * | 2017-12-29 | 2018-09-21 | 西安智盛锐芯半导体科技有限公司 | Virtual LED display module based on three vitta shape LED chips and 6 times of frequency displaying methods |
| CN108987557A (en) * | 2018-07-04 | 2018-12-11 | 佛山市国星半导体技术有限公司 | A kind of flip LED chips and preparation method thereof, LED component |
| CN109560100A (en) * | 2018-11-23 | 2019-04-02 | 江苏新广联半导体有限公司 | A kind of formal dress GaN base LED micro-display device and preparation method thereof |
| CN109643643A (en) * | 2018-11-30 | 2019-04-16 | 长江存储科技有限责任公司 | Bond memory part and its manufacturing method |
| US11114453B2 (en) | 2018-11-30 | 2021-09-07 | Yangtze Memory Technologies Co., Ltd. | Bonded memory device and fabrication methods thereof |
| CN110085620A (en) * | 2019-04-30 | 2019-08-02 | 湘能华磊光电股份有限公司 | A kind of microarray integrated LED chip and preparation method thereof |
| CN110085620B (en) * | 2019-04-30 | 2022-02-15 | 湘能华磊光电股份有限公司 | Micro-array integrated LED chip and preparation method thereof |
| CN110176470A (en) * | 2019-05-30 | 2019-08-27 | 厦门乾照光电股份有限公司 | A kind of high-voltage LED and preparation method thereof |
| CN112802953A (en) * | 2020-12-28 | 2021-05-14 | 厦门三安光电有限公司 | Light-emitting diode and preparation method thereof |
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Application publication date: 20141224 |