CN208240713U - A kind of LED chip with transparency conducting layer composite membrane group - Google Patents
A kind of LED chip with transparency conducting layer composite membrane group Download PDFInfo
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- CN208240713U CN208240713U CN201820806163.2U CN201820806163U CN208240713U CN 208240713 U CN208240713 U CN 208240713U CN 201820806163 U CN201820806163 U CN 201820806163U CN 208240713 U CN208240713 U CN 208240713U
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Abstract
The utility model provides a kind of LED chip with transparency conducting layer composite membrane group, it include: substrate and the epitaxial structure positioned at one side of substrate surface, at least one layer of transparency conducting layer composite membrane group, first electrode and second electrode, epitaxial structure include the first semiconductor layer, mqw light emitting layer and the second semiconductor layer for being set in turn in substrate surface；Transparency conducting layer composite membrane group includes transparency conducting layer and the metal layer positioned at a transparency conducting layer at least side surface, the resistivity of metal layer is less than the resistivity of transparency conducting layer, therefore, the resistivity of entire transparency conducting layer, the efficiency extending transversely so as to increase electric current, the voltage for reducing LED chip can be reduced, and then it can be on the basis of guaranteeing voltage requirements, the thickness for further decreasing transparency conducting layer improves the brightness of LED chip.
Description
Technical field
The utility model relates to technical field of semiconductors, have transparency conducting layer composite membrane more specifically to one kind
The LED chip of group.
Background technique
Group Ⅲ-Ⅴ compound semiconductor material is current main-stream for making LED(Light Emitting Diode,
Light emitting diode) chip semiconductor material, wherein the most universal with gallium nitride-based material and AlGaInP sill.
The current expansion performance of traditional p-type group Ⅲ-Ⅴ compound semiconductor material is poor, in order to allow current to enough uniformly
Injection luminescent layer, it is common practice in p-type group Ⅲ-Ⅴ compound semiconductor material layer add layer of transparent conductive layer.
Wherein, common transparency conducting layer includes tin indium oxide, cadmium tin, indium oxide and zinc oxide etc., wherein tin indium oxide
(Indium Tin Oxide, ITO) is a kind of most widely used electrically conducting transparent layer material.
But since the thickness of transparency conducting layer is to the voltage of LED chip and being affected for brightness, such as transparency conducting layer
Thicker obtainable voltage is lower, but too thick transparency conducting layer can absorb part light again, influence the light extraction efficiency of LED chip,
It therefore, is all to be preferably minimized the thickness of transparency conducting layer on the basis of guaranteeing voltage requirements in the prior art, it is saturating to reduce
The extinction degree of bright conductive layer.
Utility model content
In view of this, the present invention provides a kind of LED chips with transparency conducting layer composite membrane group, with further
Reduce the voltage of LED chip.
To achieve the above object, the utility model provides the following technical solutions:
A kind of LED chip with transparency conducting layer composite membrane group, comprising:
Substrate and the epitaxial structure positioned at the one side of substrate surface, at least one layer of transparency conducting layer composite membrane group, first
Electrode and second electrode, the epitaxial structure include at least the first semiconductor layer, the quantum for being set in turn in the substrate surface
Trap luminescent layer and the second semiconductor layer；
The first electrode is located at the platform for exposing first semiconductor layer, and is electrically connected with first semiconductor layer
It connects；The second electrode is located at the transparency conducting layer composite membrane group surface, and by the transparency conducting layer composite membrane group with
The second semiconductor layer electrical connection；
The transparency conducting layer composite membrane group include transparency conducting layer and be located at a transparency conducting layer at least side surface
Metal layer, the resistivity of the metal layer is less than the resistivity of the transparency conducting layer.
Preferably, the transparency conducting layer composite membrane group include transparency conducting layer and be located at transparency conducting layer side table
The metal layer in face.
Preferably, the transparency conducting layer is located at the surface of second semiconductor layer, and the metal layer is located at described
The surface of bright conductive layer.
Preferably, the metal layer is located at the surface of second semiconductor layer, and the transparency conducting layer is located at the gold
Belong to the surface of layer.
Preferably, the transparency conducting layer composite membrane group include transparency conducting layer and be located at transparency conducting layer two sides table
The metal layer in face, wherein first layer metal layer is located at the surface of second semiconductor layer, and the transparency conducting layer is located at described
The surface of first layer metal layer, second layer metal layer are located at the surface of the transparency conducting layer.
Preferably, the transparency conducting layer is ITO, FTO, ATO, AZO or GZO film layer.
Preferably, the material of the metal layer is the alloy of Al, Zn, Ag or in which at least two kinds materials.
Preferably, the metal layer with a thickness of 5 ~ 50.
Compared with prior art, technical solution provided by the utility model has the advantage that
LED chip provided by the utility model with transparency conducting layer composite membrane group, including substrate and be located at described
The epitaxial structure on one side of substrate surface, at least one layer of transparency conducting layer composite membrane group, first electrode and second electrode, electrically conducting transparent
Layer composite membrane group includes transparency conducting layer and the metal layer positioned at a transparency conducting layer at least side surface again, due to the electricity of metal layer
Resistance rate is less than the resistivity of transparency conducting layer, therefore, can reduce the resistivity of entire transparency conducting layer, so as to increasing electricity
The efficiency extending transversely of stream, the voltage for reducing LED chip, and then can be further decreased on the basis of guaranteeing voltage requirements
The thickness of transparency conducting layer, the extinction degree for reducing transparency conducting layer, improve the brightness of LED chip.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is the embodiments of the present invention, for those of ordinary skill in the art, without creative efforts, also
Other attached drawings can be obtained according to the attached drawing of offer.
Fig. 1 is a kind of structural schematic diagram of LED chip provided by the embodiment of the utility model；
Fig. 2 is the structural schematic diagram of another LED chip provided by the embodiment of the utility model；
Fig. 3 is the structural schematic diagram of another LED chip provided by the embodiment of the utility model；
Fig. 4 is the structural schematic diagram of another LED chip provided by the embodiment of the utility model.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
Every other embodiment obtained, fall within the protection scope of the utility model.
The utility model embodiment provides a kind of LED chip with transparency conducting layer composite membrane group, as shown in Figure 1,
Include:
Substrate 1 and the epitaxial structure 2 positioned at 1 one side surface of substrate, at least one layer of transparency conducting layer composite membrane group 3, first
Electrode 4 and second electrode 5, the epitaxial structure 2 include at least the first semiconductor layer 20, the quantum for being set in turn in 1 surface of substrate
Trap luminescent layer 21 and the second semiconductor layer 22.
Wherein, second electrode 5 is located at the surface of transparency conducting layer composite membrane group 3, also, second electrode 5 is led by transparent
Electric layer composite membrane group 3 is electrically connected with the second semiconductor layer 22.First electrode 4 is located at the platform for exposing the first semiconductor layer 20,
And it is electrically connected with the first semiconductor layer 20.Transparency conducting layer composite membrane group 3 is including transparency conducting layer 30 and is located at transparency conducting layer
The metal layer 31 of a 30 at least side surfaces, the resistivity of metal layer 31 are less than the resistivity of transparency conducting layer 30.
Since the resistivity of metal layer 31 is less than the resistivity of transparency conducting layer 30, entirely transparent lead can be reduced
The resistivity of electric layer the efficiency extending transversely so as to increase electric current, reduces the voltage of LED chip, and then can guarantee
On the basis of voltage requirements, further decreases the thickness of transparency conducting layer 30, reduces the extinction degree of transparency conducting layer 30, improve
The brightness of LED chip.
In the present embodiment, the first semiconductor layer 20 is n type gallium nitride layer, and the second semiconductor layer 22 is p-type gallium nitride layer.It needs
It is noted that buffer layer 6 can also be initially formed before depositing the first semiconductor layer 20 on substrate 1.It is led forming the second half
After body layer 22, the second semiconductor layer 22 and mqw light emitting layer 21 can be performed etching, formation exposes the first semiconductor
It is multiple to form transparency conducting layer in the second semiconductor layer 22 and 20 surface of the first semiconductor layer exposed later for the platform of layer 20
Close film group 3 merges transparency conducting layer 30 and metal layer 31 preferably, and keep transparency conducting layer compound after annealing process
Film group 3 and the second semiconductor layer 22 or the first semiconductor layer 20 exposed form good Ohmic contact, later, etch away sudden and violent
The transparency conducting layer composite membrane group 3 on 20 surface of the first semiconductor layer exposed, only retains the transparent of 22 surface of the second semiconductor layer
Conductive layer composite membrane group 3, and second electrode 5 is formed in the transparency conducting layer composite membrane group 3 on 22 surface of the second semiconductor layer,
20 surface of the first semiconductor layer exposed forms first electrode 4.
In one embodiment of the utility model, transparency conducting layer composite membrane group 3 includes transparency conducting layer 30 and is located at
The metal layer 31 of 30 1 side surface of transparency conducting layer.As shown in Figure 1, transparency conducting layer 30 is located at the table of the second semiconductor layer 22
Face, metal layer 31 are located at the surface of transparency conducting layer 30.Certainly, the utility model is not limited to that, in other embodiments,
As shown in Fig. 2, metal layer 31 can be located at the surface of the second semiconductor layer 22, transparency conducting layer 30 can be located at metal layer 31
Surface.
In another embodiment of the utility model, transparency conducting layer composite membrane group 3 can also include transparency conducting layer
30 and positioned at 30 both side surface of transparency conducting layer metal layer 31, as shown in figure 3, first layer metal layer 31 is located at the second semiconductor
The surface of layer 22, transparency conducting layer 30 are located at the surface of first layer metal layer 31, and second layer metal layer 31 is located at transparency conducting layer
30 surface.
In another embodiment of the utility model, LED chip can also include multi-layer transparent conductive layer composite membrane group
3, as shown in figure 4, be only illustrated so that LED chip includes two layers of 32 layers of transparency conducting layer composite membrane group as an example in the present embodiment,
In addition, only including transparency conducting layer 30 and metal positioned at 30 1 side surface of transparency conducting layer with transparency conducting layer composite membrane group 3
It is illustrated, is not limited to that for layer 31.
Transparency conducting layer 30 in the present embodiment is ITO(In2O3:SnO2), FTO(SnO2:F), ATO(SnO2:Sb),
AZO(ZnO:Al) or GZO(ZnO:Ga) film layer.The material of metal layer 31 is the conjunction of Al, Zn, Ag or in which at least two kinds materials
Gold, for example, the alloy of Al and Zn, or, the alloy etc. of Zn and Ag.Further, in this embodiment metal layer 31 with a thickness of 5 ~
50Å。
Since the thickness of metal layer 31 is far smaller than the thickness of transparency conducting layer 30, it will not be to transparency conducting layer 30
Thickness have an impact, the ohm contact performance of transparency conducting layer 30 and the second semiconductor layer 22 can be promoted instead, so that identical
Under thickness, the voltage of LED chip is less than the voltage of LED chip in the prior art in the present embodiment.Based on this, when in embodiment
The transparency conducting layer when voltage of LED chip is identical as the voltage of LED chip in the prior art, in the present embodiment in LED chip
The thickness of composite membrane group 3 is less than the thickness of transparency conducting layer in LED chip in the prior art.
LED chip provided by the utility model with transparency conducting layer composite membrane group, including substrate and be located at described
The epitaxial structure on one side of substrate surface, at least one layer of transparency conducting layer composite membrane group, first electrode and second electrode, electrically conducting transparent
Layer composite membrane group includes transparency conducting layer and the metal layer positioned at a transparency conducting layer at least side surface again, due to the electricity of metal layer
Resistance rate is less than the resistivity of transparency conducting layer, therefore, can reduce the resistivity of entire transparency conducting layer, so as to increasing electricity
The efficiency extending transversely of stream, the voltage for reducing LED chip, and then can be further decreased on the basis of guaranteeing voltage requirements
The thickness of transparency conducting layer, the extinction degree for reducing transparency conducting layer, improve the brightness of LED chip.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.To the upper of the disclosed embodiments
It states bright, can be realized professional and technical personnel in the field or using the utility model.Various modifications to these embodiments pair
It will be apparent for those skilled in the art, the general principles defined herein can not depart from this reality
In the case where with novel spirit or scope, realize in other embodiments.Therefore, the utility model is not intended to be limited to this
These embodiments shown in text, and it is to fit to the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. a kind of LED chip with transparency conducting layer composite membrane group characterized by comprising
Substrate and the epitaxial structure positioned at the one side of substrate surface, at least one layer of transparency conducting layer composite membrane group, first electrode
And second electrode, the epitaxial structure include at least the first semiconductor layer for being set in turn in the substrate surface, Quantum Well hair
Photosphere and the second semiconductor layer；
The first electrode is located at the platform for exposing first semiconductor layer, and is electrically connected with first semiconductor layer；
The second electrode is located at the transparency conducting layer composite membrane group surface, and by the transparency conducting layer composite membrane group with it is described
The electrical connection of second semiconductor layer；
The transparency conducting layer composite membrane group includes transparency conducting layer and the gold positioned at a transparency conducting layer at least side surface
Belong to layer, the resistivity of the metal layer is less than the resistivity of the transparency conducting layer.
2. LED chip according to claim 1, which is characterized in that the transparency conducting layer composite membrane group includes transparent leads
Electric layer and metal layer positioned at one side surface of transparency conducting layer.
3. LED chip according to claim 2, which is characterized in that the transparency conducting layer is located at second semiconductor
The surface of layer, the metal layer are located at the surface of the transparency conducting layer.
4. LED chip according to claim 2, which is characterized in that the metal layer is located at second semiconductor layer
Surface, the transparency conducting layer are located at the surface of the metal layer.
5. LED chip according to claim 1, which is characterized in that the transparency conducting layer composite membrane group includes transparent leads
Electric layer and metal layer positioned at the transparency conducting layer both side surface, wherein first layer metal layer is located at second semiconductor
The surface of layer, the transparency conducting layer are located at the surface of the first layer metal layer, and second layer metal layer transparent is led positioned at described
The surface of electric layer.
6. described in any item LED chips according to claim 1 ~ 5, which is characterized in that the transparency conducting layer be ITO, FTO,
ATO, AZO or GZO film layer.
7. LED chip according to claim 6, which is characterized in that the material of the metal layer be Al, Zn, Ag or in which
The alloy of at least two kinds materials.
8. LED chip according to claim 7, which is characterized in that the metal layer with a thickness of 5 ~ 50.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820806163.2U CN208240713U (en) | 2018-05-28 | 2018-05-28 | A kind of LED chip with transparency conducting layer composite membrane group |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820806163.2U CN208240713U (en) | 2018-05-28 | 2018-05-28 | A kind of LED chip with transparency conducting layer composite membrane group |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108470809A (en) * | 2018-05-28 | 2018-08-31 | 江西乾照光电有限公司 | LED chip and preparation method thereof with transparency conducting layer composite membrane group |
| CN110176470A (en) * | 2019-05-30 | 2019-08-27 | 厦门乾照光电股份有限公司 | A kind of high-voltage LED and preparation method thereof |
-
2018
- 2018-05-28 CN CN201820806163.2U patent/CN208240713U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108470809A (en) * | 2018-05-28 | 2018-08-31 | 江西乾照光电有限公司 | LED chip and preparation method thereof with transparency conducting layer composite membrane group |
| CN110176470A (en) * | 2019-05-30 | 2019-08-27 | 厦门乾照光电股份有限公司 | A kind of high-voltage LED and preparation method thereof |
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