CN109524514A - A kind of flip LED chips and preparation method thereof with Ag reflection layer structure - Google Patents
A kind of flip LED chips and preparation method thereof with Ag reflection layer structure Download PDFInfo
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- CN109524514A CN109524514A CN201811406669.5A CN201811406669A CN109524514A CN 109524514 A CN109524514 A CN 109524514A CN 201811406669 A CN201811406669 A CN 201811406669A CN 109524514 A CN109524514 A CN 109524514A
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- 238000002360 preparation method Methods 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000002161 passivation Methods 0.000 claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 229910052709 silver Inorganic materials 0.000 claims abstract description 17
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- 238000002310 reflectometry Methods 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 149
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 239000002131 composite material Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The present invention relates to chip manufacturing technical fields, specifically disclose a kind of flip LED chips with Ag reflection layer structure, wherein, the flip LED chips with Ag reflection layer structure include: substrate, light emitting epitaxial layer is set on the substrate, transparency conducting layer is arranged away from the surface of the substrate in the light emitting epitaxial layer, the reflecting layer Ag is arranged away from the surface of the light emitting epitaxial layer in the transparency conducting layer, passivation layer is arranged away from the surface of the transparency conducting layer in the reflecting layer Ag, the reflecting layer Ag includes setting gradually Ti from the light emitting epitaxial layer to the passivation layer direction, Ag, Ti, Al and Ti.The invention also discloses a kind of production methods of flip LED chips with Ag reflection layer structure.Flip LED chips provided by the invention with Ag reflection layer structure not only reflectivity with higher, but also there is preferable adhesiveness and stability.
Description
Technical field
The present invention relates to chip manufacturing technical field more particularly to a kind of flip LED chips with Ag reflection layer structure
And a kind of production method of the flip LED chips with Ag reflection layer structure.
Background technique
With the development of LED industry, packed LED chip technology is increasingly mature, and skill upgrading difficulty is increasing.Upside-down mounting core
Piece is because advantages, the market demands such as its luminous efficiency high heat dispersion is good are gradually promoted.Ag metal is because have preferable reflection
Rate is used as flip-chip reflecting layer, but poor because of the contact of Ag and the ITO of bottom electrically conducting transparent, and in chip manufacturing mistake
It is easy to overflow in journey that chip is caused to leak electricity, it is therefore desirable to form good Ohmic contact, higher reflectivity with suitable technique
And to guarantee stability in use.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art, provide a kind of with the reflecting layer Ag knot
The flip LED chips of structure and a kind of production method of the flip LED chips with Ag reflection layer structure, to solve in the prior art
The problem of.
As the first aspect of the invention, a kind of flip LED chips with Ag reflection layer structure are provided, wherein institute
Stating the flip LED chips with Ag reflection layer structure includes: substrate, and light emitting epitaxial layer is arranged on the substrate, described luminous outer
Prolong layer away from the surface of substrate setting transparency conducting layer, the transparency conducting layer is set away from the surface of the light emitting epitaxial layer
Set the reflecting layer Ag, passivation layer is arranged away from the surface of the transparency conducting layer in the reflecting layer Ag, the reflecting layer Ag include from
The light emitting epitaxial layer to the passivation layer direction sets gradually Ti, Ag, Ti, Al and Ti.
Preferably, the light emitting epitaxial layer include N-GAN layers, quantum well layer and P-GAN layers, described N-GAN layers with it is described
Substrate connection, the quantum well layer are arranged described between N-GAN layers and P-GAN layer, described P-GAN layers and the electrically conducting transparent
Layer connection.
Preferably, the flip LED chips with Ag reflection layer structure include N pad electrode and P pad electrode, described
One end of N pad electrode and one end of P pad electrode are arranged at the surface that the passivation layer deviates from the reflecting layer Ag, described
The other end of N pad electrode is connect through the passivation layer with described N-GAN layers, and the other end of the P pad electrode runs through institute
Passivation layer is stated to connect with the reflecting layer Ag.
Preferably, the substrate includes Sapphire Substrate.
Preferably, the passivation layer includes SiO2Passivation layer.
Preferably, the transparency conducting layer includes ITO conductive layer.
As the second aspect of the invention, a kind of production side of flip LED chips with Ag reflection layer structure is provided
Method, wherein the production method of the flip LED chips with Ag reflection layer structure includes:
Substrate is provided, grows light emitting epitaxial layer over the substrate；
Transparency conducting layer is made on the light emitting epitaxial layer；
Make Ti, Ag, Ti, Al and Ti successively on the transparency conducting layer to form the reflecting layer Ag；
Passivation layer is made on the reflecting layer Ag；
N pad electrode and P pad electrode are made on the passivation layer.
Preferably, the substrate includes Sapphire Substrate.
Preferably, the light emitting epitaxial layer of growth over the substrate includes:
N-GAN layers are successively grown over the substrate, quantum well layer and P-GAN layers to be to form the light emitting epitaxial layer.
Preferably, described to make Ti, Ag, Ti, Al and Ti successively on the transparency conducting layer to form the reflecting layer Ag packet
It includes and Ti, Ag, Ti, Al and Ti is deposited successively on the transparency conducting layer to form the reflecting layer Ag.
Flip LED chips provided by the invention with Ag reflection layer structure, by the way that Ag reflection layer structure to be set to
The such composite construction of Ti, Ag, Ti, Al and Ti, not only reflectivity with higher, but also there is preferable adhesiveness and steady
It is qualitative.
Detailed description of the invention
The drawings are intended to provide a further understanding of the invention, and constitutes part of specification, with following tool
Body embodiment is used to explain the present invention together, but is not construed as limiting the invention.In the accompanying drawings:
Fig. 1 is the structural schematic diagram of the flip LED chips provided by the invention with Ag reflection layer structure.
Fig. 2 is the schematic diagram of Ag reflection layer structure provided by the invention.
Fig. 3 is the flow chart of the production method of the flip LED chips provided by the invention with Ag reflection layer structure.
Specific embodiment
Below in conjunction with attached drawing, detailed description of the preferred embodiments.It should be understood that this place is retouched
The specific embodiment stated is merely to illustrate and explain the present invention, and is not intended to restrict the invention.
As the first aspect of the invention, a kind of flip LED chips with Ag reflection layer structure are provided, wherein such as
Shown in Fig. 1 and Fig. 2, the flip LED chips with Ag reflection layer structure include: substrate 110, are arranged on the substrate 110
Light emitting epitaxial layer 120, transparency conducting layer 130 is arranged away from the surface of the substrate 110 in the light emitting epitaxial layer 120, described
The reflecting layer Ag 140 is arranged away from the surface of the light emitting epitaxial layer 120 in bright conductive layer 130, and the reflecting layer Ag 140 is away from described
The surface of transparency conducting layer 130 is arranged passivation layer 150, and the reflecting layer Ag 140 includes from the light emitting epitaxial layer 120 to described
150 direction of passivation layer sets gradually Ti, Ag, Ti, Al and Ti.
Flip LED chips provided by the invention with Ag reflection layer structure, by the way that Ag reflection layer structure to be set to
The such composite construction of Ti, Ag, Ti, Al and Ti, not only reflectivity with higher, but also there is preferable adhesiveness and steady
It is qualitative.
It should be noted that the first layer of the reflecting layer the Ag setting is Ti, which is very thin metal layer, and effect is to increase
Adhesiveness between strong basis plate and reflecting layer metal need to control the thickness of this layer of metal, too thick if too thin will affect adhesiveness
Reflectivity can be reduced；The second layer of setting is Ag, this layer is the primary structure in reflecting layer, and Ag metal has preferable reflecting properties；
The third layer of setting is Ti, this layer can enhance the adhesiveness between the second layer in the reflecting layer Ag and the 4th layer；The 4th be arranged
Layer prevents the diffusion of Ag its purpose is to wrap Ag for Al, increases the stability in reflecting layer.The sputter of Al is divided into two
Step carries out, and the first step is with low-power (such as 40 watts) progress, to guarantee covering property, second step with high power (such as 600 watts) into
Row, to reach enough thickness.The layer 5 of setting is Ti, this layer increases protective layer on the surface of Al, prevent in subsequent work
It is damaged by corrosion in skill.
It should be noted that one layer of SiO can be after finishing reflection layer structure2As passivation layer, because in catoptric arrangement
In contain metal Al, SiO2It is graphical when use dry etching, prevent medical fluid when wet etching from reacting with Al, cause to be bubbled,
Metal is caused to fall off.
Specifically, as shown in Figure 1, the light emitting epitaxial layer includes N-GAN layer 121, quantum well layer 122 and P-GAN layers
123, the N-GAN layer 121 is connect with the substrate 110, and the quantum well layer 122 is arranged in the N-GAN layer 121 and P-
Between GAN layer 123, the P-GAN layer 123 is connect with the transparency conducting layer 130.
Specifically, the flip LED chips with Ag reflection layer structure include N pad electrode 161 and P pad electrode
162, one end of the N pad electrode 161 and one end of P pad electrode 162 are arranged at the passivation layer 150 away from the Ag
The other end on the surface in reflecting layer 140, the N pad electrode 161 connects through the passivation layer 150 with the N-GAN layer 121
It connects, the other end of the P pad electrode 162 is connect through the passivation layer 150 with the reflecting layer Ag 140.
Preferably, the substrate includes Sapphire Substrate.
Preferably, the passivation layer includes SiO2Passivation layer.
Preferably, the transparency conducting layer includes ITO conductive layer.
As the second aspect of the invention, a kind of production side of flip LED chips with Ag reflection layer structure is provided
Method, wherein as shown in figure 3, the production method of the flip LED chips with Ag reflection layer structure includes:
S110, substrate is provided, grows light emitting epitaxial layer over the substrate；
S120, transparency conducting layer is made on the light emitting epitaxial layer；
S130, Ti, Ag, Ti, Al and Ti are made successively on the transparency conducting layer to form the reflecting layer Ag；
S140, passivation layer is made on the reflecting layer Ag；
S150, N pad electrode and P pad electrode are made on the passivation layer.
The production method of flip LED chips provided by the invention with Ag reflection layer structure, by tying the reflecting layer Ag
Structure is set to the such composite construction of Ti, Ag, Ti, Al and Ti, not only reflectivity with higher, but also has preferable viscous
Attached property and stability.
Preferably, the substrate includes Sapphire Substrate.
Specifically, the light emitting epitaxial layer of growth over the substrate includes:
N-GAN layers are successively grown over the substrate, quantum well layer and P-GAN layers to be to form the light emitting epitaxial layer.
Specifically, described to make Ti, Ag, Ti, Al and Ti successively on the transparency conducting layer to form the reflecting layer Ag packet
It includes and Ti, Ag, Ti, Al and Ti is deposited successively on the transparency conducting layer to form the reflecting layer Ag.
The production method of the flip LED chips provided by the invention with Ag reflection layer structure is carried out specifically below
It is bright.
GaN epitaxial layer is grown on a sapphire substrate；N-GaN is exposed using ICP technique；Grow transparency conducting layer；It steams
Plate the area N electrode；Successively five layers of metal Ti, Ag, Ti, Al and Ti in the reflecting layer sputter Ag；Grow SiO2Passivation layer, and it is dry with ICP
Method carves figure；Pad electrode is deposited.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of flip LED chips with Ag reflection layer structure, which is characterized in that the upside-down mounting with Ag reflection layer structure
LED chip includes: substrate, and light emitting epitaxial layer is arranged on the substrate, and the light emitting epitaxial layer is set away from the surface of the substrate
Transparency conducting layer is set, the reflecting layer Ag, the reflecting layer Ag is arranged away from the surface of the light emitting epitaxial layer in the transparency conducting layer
Passivation layer is set away from the surface of the transparency conducting layer, the reflecting layer Ag includes from the light emitting epitaxial layer to the passivation
Layer direction sets gradually Ti, Ag, Ti, Al and Ti.
2. the flip LED chips according to claim 1 with Ag reflection layer structure, which is characterized in that described luminous outer
Prolong layer include N-GAN layers, quantum well layer and P-GAN layers, described N-GAN layers connect with the substrate, the quantum well layer setting
Described between N-GAN layers and P-GAN layer, described P-GAN layers connect with the transparency conducting layer.
3. the flip LED chips according to claim 2 with Ag reflection layer structure, which is characterized in that described to have Ag
The flip LED chips of reflection layer structure include N pad electrode and P pad electrode, and one end of the N pad electrode and P pad are electric
One end of pole is arranged at the surface that the passivation layer deviates from the reflecting layer Ag, and the other end of the N pad electrode runs through institute
It states passivation layer to connect with described N-GAN layers, the other end of the P pad electrode connects through the passivation layer and the reflecting layer Ag
It connects.
4. the flip LED chips according to claim 1 with Ag reflection layer structure, which is characterized in that the substrate packet
Include Sapphire Substrate.
5. the flip LED chips according to claim 1 with Ag reflection layer structure, which is characterized in that the passivation layer
Including SiO2Passivation layer.
6. the flip LED chips according to claim 1 with Ag reflection layer structure, which is characterized in that described transparent to lead
Electric layer includes ITO conductive layer.
7. a kind of production method of the flip LED chips with Ag reflection layer structure, which is characterized in that described to have the reflecting layer Ag
The production method of the flip LED chips of structure includes:
Substrate is provided, grows light emitting epitaxial layer over the substrate；
Transparency conducting layer is made on the light emitting epitaxial layer；
Make Ti, Ag, Ti, Al and Ti successively on the transparency conducting layer to form the reflecting layer Ag；
Passivation layer is made on the reflecting layer Ag；
N pad electrode and P pad electrode are made on the passivation layer.
8. the production method of the flip LED chips according to claim 7 with Ag reflection layer structure, which is characterized in that
The substrate includes Sapphire Substrate.
9. the production method of the flip LED chips according to claim 8 with Ag reflection layer structure, which is characterized in that
It is described over the substrate growth light emitting epitaxial layer include:
N-GAN layers are successively grown over the substrate, quantum well layer and P-GAN layers to be to form the light emitting epitaxial layer.
10. the production method of the flip LED chips according to claim 7 with Ag reflection layer structure, which is characterized in that
It is described successively to make Ti, Ag, Ti, Al and Ti on the transparency conducting layer and be included in the electrically conducting transparent to form the reflecting layer Ag
Ti, Ag, Ti, Al and Ti are deposited on layer successively to form the reflecting layer Ag.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811406669.5A CN109524514A (en) | 2018-11-23 | 2018-11-23 | A kind of flip LED chips and preparation method thereof with Ag reflection layer structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811406669.5A CN109524514A (en) | 2018-11-23 | 2018-11-23 | A kind of flip LED chips and preparation method thereof with Ag reflection layer structure |
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| CN109524514A true CN109524514A (en) | 2019-03-26 |
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| CN201811406669.5A Pending CN109524514A (en) | 2018-11-23 | 2018-11-23 | A kind of flip LED chips and preparation method thereof with Ag reflection layer structure |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110034220A (en) * | 2019-04-16 | 2019-07-19 | 佛山市国星半导体技术有限公司 | A kind of flip LED chips and preparation method thereof |
| CN110600592A (en) * | 2019-10-11 | 2019-12-20 | 佛山市国星半导体技术有限公司 | Flip LED chip and manufacturing method thereof |
| CN110828629A (en) * | 2019-10-22 | 2020-02-21 | 佛山市国星半导体技术有限公司 | Flip LED chip and manufacturing method thereof |
| CN112271241A (en) * | 2020-10-30 | 2021-01-26 | 华引芯（武汉）科技有限公司 | Manufacturing process of high-power LED chip and LED chip |
| CN113990995A (en) * | 2021-12-27 | 2022-01-28 | 南昌凯捷半导体科技有限公司 | Mini/micro LED with Ag reflector and manufacturing method thereof |
| CN116960253A (en) * | 2023-09-19 | 2023-10-27 | 江西兆驰半导体有限公司 | Flip light-emitting diode chip and preparation method thereof |
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| CN103456859A (en) * | 2013-09-05 | 2013-12-18 | 深圳市智讯达光电科技有限公司 | Reflecting layer structure of LED flip chip and LED flip chip |
| CN104037277A (en) * | 2014-06-26 | 2014-09-10 | 圆融光电科技有限公司 | LED flip chip manufacturing method and LED flip chip |
| CN104681687A (en) * | 2013-12-03 | 2015-06-03 | 上海蓝光科技有限公司 | Reflecting layer structure of light-emitting diode |
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2018
- 2018-11-23 CN CN201811406669.5A patent/CN109524514A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103456859A (en) * | 2013-09-05 | 2013-12-18 | 深圳市智讯达光电科技有限公司 | Reflecting layer structure of LED flip chip and LED flip chip |
| CN104681687A (en) * | 2013-12-03 | 2015-06-03 | 上海蓝光科技有限公司 | Reflecting layer structure of light-emitting diode |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110034220A (en) * | 2019-04-16 | 2019-07-19 | 佛山市国星半导体技术有限公司 | A kind of flip LED chips and preparation method thereof |
| CN110600592A (en) * | 2019-10-11 | 2019-12-20 | 佛山市国星半导体技术有限公司 | Flip LED chip and manufacturing method thereof |
| CN110828629A (en) * | 2019-10-22 | 2020-02-21 | 佛山市国星半导体技术有限公司 | Flip LED chip and manufacturing method thereof |
| CN110828629B (en) * | 2019-10-22 | 2024-02-20 | 佛山市国星半导体技术有限公司 | Flip LED chip and manufacturing method thereof |
| CN112271241A (en) * | 2020-10-30 | 2021-01-26 | 华引芯（武汉）科技有限公司 | Manufacturing process of high-power LED chip and LED chip |
| CN113990995A (en) * | 2021-12-27 | 2022-01-28 | 南昌凯捷半导体科技有限公司 | Mini/micro LED with Ag reflector and manufacturing method thereof |
| CN116960253A (en) * | 2023-09-19 | 2023-10-27 | 江西兆驰半导体有限公司 | Flip light-emitting diode chip and preparation method thereof |
| CN116960253B (en) * | 2023-09-19 | 2023-12-19 | 江西兆驰半导体有限公司 | Flip light-emitting diode chip and preparation method thereof |
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Application publication date: 20190326 |
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