CN110828629A - Flip LED chip and manufacturing method thereof - Google Patents
Flip LED chip and manufacturing method thereof Download PDFInfo
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- CN110828629A CN110828629A CN201911003236.XA CN201911003236A CN110828629A CN 110828629 A CN110828629 A CN 110828629A CN 201911003236 A CN201911003236 A CN 201911003236A CN 110828629 A CN110828629 A CN 110828629A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000002161 passivation Methods 0.000 claims abstract description 88
- 239000000758 substrate Substances 0.000 claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000003466 welding Methods 0.000 claims abstract description 25
- 230000004888 barrier function Effects 0.000 claims abstract description 24
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 14
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 14
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 14
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 14
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 14
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 14
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 23
- 238000007788 roughening Methods 0.000 claims description 14
- 229910052594 sapphire Inorganic materials 0.000 claims description 14
- 239000010980 sapphire Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000001312 dry etching Methods 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 238000000149 argon plasma sintering Methods 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 7
- 230000031700 light absorption Effects 0.000 abstract description 4
- 230000006872 improvement Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
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- 238000005530 etching Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
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- 235000009537 plain noodles Nutrition 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Abstract
The invention discloses a flip LED chip and a manufacturing method thereof, wherein the chip comprises an epitaxial layer, a transparent conducting layer, a reflecting layer, a barrier layer, a first passivation layer, a passivation supporting layer, a connecting electrode and a welding electrode, wherein the passivation supporting layer is combined on the connecting electrode and the first passivation layer, and the welding electrode is combined on the passivation supporting layer and is in conductive connection with the connecting electrode; the passivation supporting layer is made of SiO2、Al2O3And SiNxThe thickness of the passivation supporting layer is 120-170 mu m, and the passivation supporting layer is used for supporting a chip and playing an insulating role; and light emitted by the epitaxial layer is directly emitted from the back surface of the epitaxial layer after being reflected by the reflecting layer. The flip LED chip reduces the light absorption influence of a large amount of bulk materials such as the substrate, the AlN layer, the buffer layer and the like, and light rays directly pass through the back of the epitaxial layerThe surface is emergent, and the light-emitting efficiency can be improved by more than 3%.
Description
Technical Field
The invention relates to the technical field of light emitting diodes, in particular to a flip LED chip and a manufacturing method thereof.
Background
The flip LED chip is a new type LED in recent years, has the main functions of no packaging process, greatly saves the production efficiency, can be applied to large current and can realize an ultra-micro mini type LED.
Referring to fig. 1, a conventional flip LED chip includes an AlN layer 11, a buffer layer 12, an epitaxial layer 20, a transparent conductive layer 30, a reflective layer 40, a barrier layer 50, a passivation layer 60, a first electrode 71 and a second electrode 72, which are sequentially disposed on a substrate 10, where a light emitting surface of the conventional flip LED chip is a substrate side, an existing substrate is generally a sapphire substrate, the epitaxial layer is made of a gallium nitride material, and in order to reduce lattice mismatch between the sapphire substrate and the epitaxial layer, structures such as the AlN layer and the buffer layer need to be formed on the sapphire substrate before the epitaxial layer is formed, which are collectively referred to as bulk materials, and these bulk materials can absorb light emitted from the epitaxial layer, thereby reducing light emitting efficiency of the chip.
In addition, current LED backlight display forms by many flip-chip LED chips concatenation, because flip-chip LED chip's play plain noodles concentrates on substrate one side outgoing, should flip-chip LED chip, backlight display if want the light-emitting even, the distance between the adjacent LED chip will be enough little, and this just needs a large amount of flip-chip LED chips to assemble, and is with higher costs.
Disclosure of Invention
The invention aims to solve the technical problem of providing a flip LED chip and a manufacturing method thereof, and the flip LED chip has high light emitting efficiency.
In order to solve the above technical problem, the present invention provides a flip LED chip, including: the epitaxial layer, the transparent conducting layer, the reflecting layer, the barrier layer, the first passivation layer, the passivation supporting layer, the connecting electrode and the welding electrode, wherein the transparent conducting layer is combined on the front surface of the epitaxial layer, the reflecting layer is combined on the transparent conducting layer, the barrier layer is combined on the reflecting layer, the first passivation layer is combined on the barrier layer, the connecting electrode is combined on the first passivation layer and is in conductive connection with the epitaxial layer, the passivation supporting layer is combined on the connecting electrode and the first passivation layer, and the welding electrode is combined on the passivation supporting layer and is in conductive connection with the connecting electrode;
the passivation supporting layer is made of SiO2、Al2O3And SiNxThe thickness of the passivation supporting layer is 120-170 mu m, and the passivation supporting layer is used for supporting a chip and playing an insulating role;
and light emitted by the epitaxial layer is directly emitted from the back surface of the epitaxial layer after being reflected by the reflecting layer.
As an improvement of the above scheme, the epitaxial layer includes a first semiconductor layer, an active layer and a second semiconductor layer, the transparent conductive layer is disposed between the second semiconductor layer and the reflective layer, and light emitted from the active layer exits from the back surface of the first semiconductor layer;
the back surface of the first semiconductor layer is provided with a roughening structure, wherein the roughening depth is 0.8-1.2 microns.
As an improvement of the above scheme, the connection electrode includes a first connection electrode and a second connection electrode, wherein the first connection electrode penetrates through the first passivation layer, the barrier layer, the metal reflective layer and the transparent conductive layer and is connected to the first semiconductor layer; the second connecting electrode penetrates through the first passivation layer and the barrier layer and is connected with the metal reflecting layer.
As an improvement of the above scheme, the first passivation layer is made of SiO2、Al2O3And SiNxOne or more of them, and the thickness is 6000-10000 angstrom.
As an improvement of the scheme, the reflecting layer is made of Ag or Al, and the thickness of the reflecting layer is 1000-3000 angstroms;
the reflecting layer is provided with a graphical structure and used for adjusting the light emitting angle and the light emitting shape of the chip.
Correspondingly, the invention also provides a manufacturing method of the flip LED chip, which comprises the following steps:
sequentially forming an AlN layer, a buffer layer, an epitaxial layer, a reflecting layer, a barrier layer, a first passivation layer and a connecting electrode on a sapphire substrate, wherein the connecting electrode is in conductive connection with the epitaxial layer;
forming a passivation support layer on the connection electrode and the first passivation layerThe support layer is made of SiO2、Al2O3And SiNxThe thickness of the passivation supporting layer is 120-170 mu m, and the passivation supporting layer is used for supporting a chip and playing an insulating role;
forming a welding electrode on the passivation supporting layer, wherein the welding electrode is electrically connected with the connecting electrode;
removing the sapphire substrate, the AlN layer and the buffer layer to expose the epitaxial layer;
light emitted from the chip exits from the exposed side of the epitaxial layer.
As an improvement of the above scheme, the method further comprises the following steps:
and roughening the exposed epitaxial layer to form a roughened structure, wherein the roughening depth is 0.8-1.2 mu m.
As an improvement of the scheme, the sapphire substrate is removed by adopting a stripping method, wherein the stripping method comprises laser sintering, dry etching and grinding;
removing the AlN layer and the buffer layer by adopting a dry etching method;
and coarsening the epitaxial layer by adopting a dry etching method, an alkaline wet etching method or an acid wet etching method.
As an improvement of the scheme, the reflecting layer is made of Ag or Al, and the thickness of the reflecting layer is 1000-3000 angstroms.
As an improvement of the above scheme, the first passivation layer is made of SiO2、Al2O3And SiNxOne or more of them, and the thickness is 6000-10000 angstrom.
The implementation of the invention has the following beneficial effects:
the passivation supporting layer of the invention is made of SiO2、Al2O3And SiNxThe thickness of the passivation supporting layer is 120-170 mu m, the passivation supporting layer is used for supporting a chip and plays an insulating role, and light emitted by the epitaxial layer is directly emitted from the back of the epitaxial layer after being reflected by the reflecting layer.
Compared with the traditional flip LED chip, the flip LED chip reduces the light absorption influence of a large amount of bulk materials such as the substrate, the AlN layer and the buffer layer, light rays are directly emitted from the back of the epitaxial layer, and the light emitting efficiency can be improved by more than 3%.
After the substrate is removed, the thickness of the passivation supporting layer is 120-170 mu m, so that the passivation supporting layer can be used as a supporting base plate of a chip, a new substrate does not need to be bonded again, a grinding and thinning process is not needed, the production efficiency is effectively improved, and the cost is saved. In addition, the passivation supporting layer can also play an insulating role, and effectively prevents the chip from electric leakage.
According to the chip, the light-emitting surface is the back surface of the first semiconductor layer, so that the light-emitting efficiency can be improved, and the light-emitting angle of the chip can be changed by roughening the back surface of the first semiconductor layer, so that different application requirements of the chip can be met.
Drawings
FIG. 1 is a schematic diagram of a conventional flip-chip LED chip;
FIG. 2 is a schematic diagram of a flip-chip LED chip according to the present invention;
FIG. 3a is a schematic diagram of the present invention after forming a first bonding layer on a sapphire substrate;
FIG. 3b is a schematic diagram of the present invention forming a second bonding layer on a transfer substrate;
FIG. 3c is a schematic illustration of a transfer substrate of the present invention bonded to a transparent conductive layer;
fig. 3d is a schematic diagram of the present invention after removing the sapphire substrate, AlN layer, and buffer layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings.
Referring to fig. 2, the present invention provides a flip LED chip including an epitaxial layer 20, a transparent conductive layer 30, a reflective layer 40, a barrier layer 50, a first passivation layer 60, a passivation support layer 70, a connection electrode and a bonding electrode, wherein the transparent conductive layer 30 is bonded to a front surface of the epitaxial layer 20, the reflective layer 40 is bonded to the transparent conductive layer 30, the barrier layer 50 is bonded to the reflective layer 40, the first passivation layer 30 is bonded to the barrier layer 50, the connection electrode is bonded to the first passivation layer 60 and is electrically connected to the epitaxial layer 20, the passivation support layer 70 is bonded to the connection electrode and the first passivation layer 60, and the bonding electrode is bonded to the passivation support layer 70 and is electrically connected to the connection electrode.
The passivating support layer 70 of the present invention is formed of SiO2、Al2O3And SiNxThe thickness of the passivation support layer 70 is 120-170 μm, the passivation support layer is used for supporting a chip and plays an insulating role, wherein light emitted by the epitaxial layer 20 is directly emitted from the back surface of the epitaxial layer 20 after being reflected by the reflection layer.
Compared with the traditional flip LED chip, the flip LED chip reduces the light absorption influence of a large amount of bulk materials such as the substrate, the AlN layer and the buffer layer, light rays are directly emitted from the back of the epitaxial layer 20, and the light emitting efficiency can be improved by more than 3%.
After the substrate is removed, the thickness of the passivation supporting layer 70 is 120-170 μm, so that the passivation supporting layer can be used as a supporting substrate of a chip, a new substrate does not need to be bonded again, a grinding and thinning process does not need to be carried out, the production efficiency is effectively improved, and the cost is saved. In addition, the passivation supporting layer 70 of the present invention can also play an insulating role, so as to effectively prevent the chip from leaking electricity.
Specifically, the epitaxial layer 20 of the present invention includes a first semiconductor layer 21, an active layer 22 and a second semiconductor layer 23, the transparent conductive layer 30 is disposed between the second semiconductor layer 23 and the reflective layer, and the light emitted from the chip exits from the first semiconductor layer 21 side.
In order to further improve the light extraction efficiency of the chip, the back surface of the first semiconductor layer 21 is provided with a roughening structure, wherein the roughening depth is 0.8-1.2 μm. If the etching depth is too deep, the photoelectric performance of the chip is affected; if the etching depth is too shallow, the roughening effect is not obvious.
In the chip, the light-emitting surface is the back surface of the first semiconductor layer 21, so that the light-emitting efficiency can be improved and the light-emitting angle of the chip can be changed by roughening the back surface of the first semiconductor layer 21, so as to meet different application requirements of the chip.
In order to improve the reflection efficiency, the reflection layer 40 is made of Ag or Al and has a thickness of 1000-3000 angstroms. The barrier layer serves as a metal diffusion for the reflective layer 40 and serves as a protection.
Furthermore, the reflective layer 40 of the present invention has a patterned structure, so as to effectively and controllably adjust the light-emitting angle and the light-emitting shape of the flip chip, and in backlight application, the present invention can significantly reduce the usage amount of the LED chip, increase the uniformity of backlight, and reduce the thickness of the liquid crystal display device.
The connection electrodes include a first connection electrode 81 and a second connection electrode 82, wherein the first connection electrode 81 penetrates through the first passivation layer 60, the barrier layer, the metal reflective layer 40 and the transparent conductive layer 30 and is connected to the first semiconductor layer 21; the second connection electrode 82 penetrates the first passivation layer 60 and the barrier layer 50 and is connected to the metal reflective layer 40.
The welding electrodes include a first welding electrode 91 and a second welding electrode 92, wherein the first welding electrode 91 is combined with the first connection electrode 81, and the second welding electrode 92 is combined with the second connection electrode 82.
The first passivation layer 60 of the present invention is used to insulate the first connection electrode 81 and the second connection electrode 82, and preferably, the first passivation layer 60 is made of SiO2、Al2O3Or SiNx with a thickness of 6000-10000 angstroms.
Correspondingly, the invention also provides a manufacturing method of the flip LED chip, which comprises the following steps:
referring to fig. 3a, an AlN layer 11, a buffer layer 12, an epitaxial layer 20, a reflective layer 40, a barrier layer, a first passivation layer 60, and a connection electrode, which is electrically conductively connected to the epitaxial layer 20, are sequentially formed on a sapphire substrate 10.
Specifically, the epitaxial layer 20 of the present invention includes a first semiconductor layer 21, an active layer 22 and a second semiconductor layer 23, the transparent conductive layer 30 is disposed between the second semiconductor layer 23 and the reflective layer 40, and the light emitted from the chip exits from the first semiconductor layer 21 side.
The connection electrodes include a first connection electrode 81 and a second connection electrode 82, wherein the first connection electrode 81 penetrates through the first passivation layer 60, the barrier layer, the metal reflective layer 40 and the transparent conductive layer 30, and is connected to the first semiconductor layer 21; the second connection electrode 82 penetrates the first passivation layer 60 and the barrier layer and is connected to the metal reflective layer 40.
In order to improve the reflection efficiency, the reflection layer 40 is made of Ag or Al and has a thickness of 1000-3000 angstroms. The barrier layer serves as a metal diffusion for the reflective layer 40 and serves as a protection.
Furthermore, the reflective layer 40 of the present invention has a patterned structure, so as to effectively and controllably adjust the light-emitting angle and the light-emitting shape of the flip chip, and in backlight application, the present invention can significantly reduce the usage amount of the LED chip, increase the uniformity of backlight, and reduce the thickness of the liquid crystal display device.
The first passivation layer 60 of the present invention is used to insulate the first connection electrode 81 and the second connection electrode 82, and preferably, the first passivation layer 60 is made of SiO2、Al2O3Or SiNx with a thickness of 6000-10000 angstroms.
Referring to fig. 3b, a passivation support layer 70 is formed on the connection electrode and the first passivation layer 60, the passivation support layer 70 being made of SiO2、Al2O3And SiNxThe thickness of the passivation support layer 70 is 120-170 mu m, and the passivation support layer 70 is used for supporting a chip and playing an insulation role.
Referring to fig. 3c, a welding electrode is formed on the passivation support layer 70, the welding electrode being electrically connected to the connection electrode.
Specifically, the passivation support layer 70 is etched to expose the connection electrode, and then a welding electrode is formed on the passivation support layer 70.
The welding electrodes include a first welding electrode 91 and a second welding electrode 92, wherein the first welding electrode 91 is coupled to the first connection electrode 81, and the second welding electrode 92 is coupled to the second connection electrode 82.
The passivating support layer 70 of the present invention serves to isolate the first welding electrode 91 from the second welding electrode 92.
Referring to fig. 3d, the sapphire substrate 10, the AlN layer 11, and the buffer layer 12 are removed to expose the first semiconductor layer 21. Specifically, the sapphire substrate is removed by adopting a stripping method, wherein the stripping method comprises laser sintering, dry etching and grinding; removing the AlN layer and the buffer layer by adopting a dry etching method;
compared with the traditional flip LED chip, the flip LED chip reduces the light absorption influence of a large amount of bulk materials such as the substrate, the AlN layer and the buffer layer, light rays are directly emitted from the back surface of the first semiconductor layer 21, and the light emitting efficiency can be improved by more than 3%.
After the substrate is removed, the thickness of the passivation supporting layer 70 is 120-170 μm, so that the passivation supporting layer can be used as a supporting substrate of a chip, a new substrate does not need to be bonded again, a grinding and thinning process does not need to be carried out, the production efficiency is effectively improved, and the cost is saved. In addition, the passivation supporting layer 70 of the present invention can also play an insulating role, so as to effectively prevent the chip from leaking electricity.
Referring to fig. 2, in order to further improve the light-emitting efficiency of the chip, the exposed first semiconductor layer 21 is roughened by a dry etching method, an alkaline wet etching method or an acidic wet etching method to form a roughened structure, so that the light-emitting efficiency can be improved, and the light-emitting angle of the chip can be changed to meet different application requirements of the chip.
Preferably, the roughening depth of the first semiconductor layer 21 is 0.8 to 1.2 μm.
While the invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not to be limited to the disclosed embodiment, but on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.
Claims (10)
1. A flip LED chip, comprising: the epitaxial layer, the transparent conducting layer, the reflecting layer, the barrier layer, the first passivation layer, the passivation supporting layer, the connecting electrode and the welding electrode, wherein the transparent conducting layer is combined on the front surface of the epitaxial layer, the reflecting layer is combined on the transparent conducting layer, the barrier layer is combined on the reflecting layer, the first passivation layer is combined on the barrier layer, the connecting electrode is combined on the first passivation layer and is in conductive connection with the epitaxial layer, the passivation supporting layer is combined on the connecting electrode and the first passivation layer, and the welding electrode is combined on the passivation supporting layer and is in conductive connection with the connecting electrode;
the passivation supporting layer is made of SiO2、Al2O3And SiNxThe thickness of the passivation supporting layer is 120-170 mu m, and the passivation supporting layer is used for supporting a chip and playing an insulating role;
and light emitted by the epitaxial layer is directly emitted from the back surface of the epitaxial layer after being reflected by the reflecting layer.
2. The flip LED chip of claim 1, wherein the epitaxial layer comprises a first semiconductor layer, an active layer, and a second semiconductor layer, the transparent conductive layer is disposed between the second semiconductor layer and the reflective layer, and light from the active layer exits the back side of the first semiconductor layer;
the back surface of the first semiconductor layer is provided with a roughening structure, wherein the roughening depth is 0.8-1.2 microns.
3. The flip LED chip of claim 2, wherein the connection electrodes comprise a first connection electrode and a second connection electrode, wherein the first connection electrode penetrates the first passivation layer, the barrier layer, the metal reflective layer, and the transparent conductive layer, and is connected to the first semiconductor layer; the second connecting electrode penetrates through the first passivation layer and the barrier layer and is connected with the metal reflecting layer.
4. The flip LED chip of claim 3, wherein the first passivation layer is formed of SiO2、Al2O3And SiNxOne or more of them, and the thickness is 6000-10000 angstrom.
5. The flip LED chip of claim 1, wherein the reflective layer is made of Ag or Al and has a thickness of 1000 to 3000 angstroms;
the reflecting layer is provided with a graphical structure and used for adjusting the light emitting angle and the light emitting shape of the chip.
6. The method for manufacturing the flip LED chip according to any one of claims 1 to 5, comprising:
sequentially forming an AlN layer, a buffer layer, an epitaxial layer, a reflecting layer, a barrier layer, a first passivation layer and a connecting electrode on a sapphire substrate, wherein the connecting electrode is in conductive connection with the epitaxial layer;
forming a passivation support layer on the connection electrode and the first passivation layer, the passivation support layer being made of SiO2、Al2O3And SiNxThe thickness of the passivation supporting layer is 120-170 mu m, and the passivation supporting layer is used for supporting a chip and playing an insulating role;
forming a welding electrode on the passivation supporting layer, wherein the welding electrode is electrically connected with the connecting electrode;
removing the sapphire substrate, the AlN layer and the buffer layer to expose the epitaxial layer;
light emitted from the chip exits from the exposed side of the epitaxial layer.
7. The method of fabricating a flip LED chip of claim 6, further comprising the steps of:
and roughening the exposed epitaxial layer to form a roughened structure, wherein the roughening depth is 0.8-1.2 mu m.
8. The method of claim 6, wherein the sapphire substrate is removed by lift-off, the lift-off comprising laser sintering, dry etching and grinding;
removing the AlN layer and the buffer layer by adopting a dry etching method;
and coarsening the epitaxial layer by adopting a dry etching method, an alkaline wet etching method or an acid wet etching method.
9. The method of claim 6, wherein the reflective layer is made of Ag or Al and has a thickness of 1000-3000 angstroms.
10. The method of fabricating the flip LED chip of claim 9, wherein the first passivation layer is formed of SiO2、Al2O3And SiNxOne or more of them, and the thickness is 6000-10000 angstrom.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112968104A (en) * | 2020-11-05 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Light-emitting chip, manufacturing method thereof and display back plate |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040169181A1 (en) * | 2002-06-26 | 2004-09-02 | Yoo Myung Cheol | Thin film light emitting diode |
| CN109524514A (en) * | 2018-11-23 | 2019-03-26 | 江苏新广联半导体有限公司 | A kind of flip LED chips and preparation method thereof with Ag reflection layer structure |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040169181A1 (en) * | 2002-06-26 | 2004-09-02 | Yoo Myung Cheol | Thin film light emitting diode |
| CN109524514A (en) * | 2018-11-23 | 2019-03-26 | 江苏新广联半导体有限公司 | A kind of flip LED chips and preparation method thereof with Ag reflection layer structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112968104A (en) * | 2020-11-05 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Light-emitting chip, manufacturing method thereof and display back plate |
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