CN214313229U - Flip LED chip - Google Patents
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- CN214313229U CN214313229U CN202120117251.3U CN202120117251U CN214313229U CN 214313229 U CN214313229 U CN 214313229U CN 202120117251 U CN202120117251 U CN 202120117251U CN 214313229 U CN214313229 U CN 214313229U
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Abstract
The utility model provides a flip-chip LED chip, include: growing a substrate; a semiconductor multilayer structure having a light-emitting region and an electrode region formed on the surface thereof; an n electrode penetrating and connected to the n-type semiconductor layer is arranged on the surface of the electrode area; the surface of the light emitting region is provided with: the reflecting structure comprises a dielectric reflecting layer and a metal reflecting layer, wherein the dielectric reflecting layer comprises a first through hole filled with a conductive material, and transparent conducting layers are arranged between contact surfaces of the dielectric material and the conductive material in the dielectric reflecting layer, between contact surfaces of the dielectric material and the metal reflecting layer and between contact surfaces of the dielectric reflecting layer and the semiconductor multilayer structure; the insulating layer is arranged on the surface of the reflecting structure and the side wall of the light-emitting region structure; and the p electrode is electrically connected to the reflecting structure through the second through hole of the insulating layer in a conducting manner. The problem that the current cannot flow through a contact area of the dielectric material is solved while the problem of adhesion among the metal reflecting layer, the dielectric reflecting layer and the luminescent material is solved.
Description
Technical Field
The utility model belongs to the technical field of the semiconductor technology and specifically relates to a flip-chip LED chip.
Background
The p and n electrodes of the transparent substrate GaN-based LED chip are generally positioned on the same side of the chip, and are also called horizontal structure chips. The p-electrode is formed by a transparent conductive layer and a metal wire which are positioned above the p-type semiconductor; the n-electrode is made of a metal wire over the n-type semiconductor (part of the p-type semiconductor is etched away to expose the n-type semiconductor). The light emitting proportion of the chip with the horizontal structure is related to the area and the thickness of the chip. Since the light emitted from the upper surface is emitted through the transparent conductive layer, and the light transmittance and the thickness of the transparent conductive layer are inversely proportional and the current spreading capability and the thickness of the transparent conductive layer are directly proportional, the light transmittance and the current spreading capability of the transparent conductive layer are a pair of spears, and the requirements of the light transmittance and the current spreading of the chip cannot be met simultaneously. This contradiction is not obvious in the case of small and medium power chips, but is a limitation for large-size, high-power chips, and flip chips have been proposed. The light-emitting of the flip chip is composed of the surface of a transparent substrate and the light-emitting of four sides, and a transparent conducting layer is replaced by a metal reflector (generally Ag), so that the flip chip has the advantages of good current diffusion, quick heat dissipation, large-current driving and the like, and is widely applied to the fields of mobile phone flashlights, general illumination, automobile illumination and the like.
Although the metal mirror has a high reflectivity, it is generally required to insert a layer of metal Ni between the metal mirror and p-type GaN because its adhesion to GaN is not good. Although this can solve the problem of adhesion to some extent, it can also affect the reflectivity of the metal reflector, thereby reducing the light extraction efficiency of the LED. In response to this problem, it has been proposed to introduce a layer of dielectric material SiO between the metal mirror and the semiconductor light-emitting material2And in the dielectric material SiO2The mode of the middle opening hole realizes the conductive connection between the metal reflector and the semiconductor luminescent material. In the reflective structure, SiO is used as a dielectric material2Has a refractive index smaller than that of the semiconductor light-emitting material and a thickness larger than the light-emitting wavelength, thereby forming SiO (silicon dioxide) dielectric material2The interface between the semiconductor light emitting material and the substrate forms total reflection, the reflection rate of photons with incidence angle larger than the total reflection angle is 100%, and the dielectric material SiO has improved reflection rate2The larger the surface area ratio of (a), the higher the reflectance of the total reflection mirror.
However, the metal reflector and the semiconductor luminescent material/dielectric material SiO still exist in the reflecting structure2The adhesion between the two layers is poor. In addition, for GaN-based LED materials, the p-type GaN is generally no more than 200nm thick with a low hole concentration, and the current hardly diffuses laterally in the p-type GaN, so in this reflective structure, the region far from the n-electrode and the dielectric material SiO are present2The contact area current can not flow through, the dielectric material SiO2The existence of (2) would rather waste the light emitting area of the semiconductor.
SUMMERY OF THE UTILITY MODEL
In order to overcome the above not enough, the utility model provides a flip-chip LED chip effectively solves the technical problem that dielectric material contact area electric current can't flow through in the current gaN base film type structure LED chip.
The utility model provides a technical scheme does:
a flip-chip LED chip comprising:
growing a substrate;
the semiconductor multilayer structure is arranged on the surface of the growth substrate and comprises an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer which are sequentially stacked, and a light emitting region and an electrode region are formed on the surface of the semiconductor multilayer structure; wherein the content of the first and second substances,
an n electrode penetrating and connected to the n-type semiconductor layer is arranged on the surface of the electrode area;
the surface of the light emitting area is provided with:
the reflecting structure is arranged on the surface of the semiconductor multilayer structure and comprises a dielectric reflecting layer which is arranged on the surface of the semiconductor multilayer structure and is formed by dielectric materials and a metal reflecting layer which is arranged on the surface of the dielectric reflecting layer, the dielectric reflecting layer comprises a first through hole filled with conductive materials, and transparent conductive layers are arranged between contact surfaces of the dielectric materials and the conductive materials in the dielectric reflecting layer, between contact surfaces of the dielectric materials and the metal reflecting layer and between contact surfaces of the dielectric reflecting layer and the semiconductor multilayer structure;
the insulating layer is arranged on the surface of the reflecting structure and the side wall of the light-emitting region structure, and a second through hole communicated with the reflecting structure is arranged in the insulating layer;
a p-electrode conductively connected to the reflective structure through the second via hole of the insulating layer;
the flip-chip LED chip further comprises: the passivation layer is connected and arranged on the surfaces of the n electrode and the p electrode, and an n electrode bonding pad connected with the surface of the passivation layer and connected to the n electrode through a third through hole formed in the passivation layer and a p electrode bonding pad connected to the p electrode are formed.
The utility model provides an among the flip-chip LED chip, set up in reflection configuration outside metal reflecting layer and dielectric reflecting layer, between dielectric material and conducting material's the contact surface in dielectric reflecting layer, set up the transparent conducting layer of different thickness between the contact surface of dielectric material and metal reflecting layer and between dielectric reflecting layer and semiconductor multilayer structure's the contact surface, with this under the prerequisite that does not influence reflection configuration reflectivity, solve metal reflecting layer, when the adhesion problem between dielectric reflecting layer and the luminescent material, solve the problem that dielectric material contact area electric current can't flow through, make the flip-chip LED chip medium current diffusion that obtains more even of preparation, higher light extraction efficiency has.
Drawings
FIG. 1 is a top view of one embodiment of a flip-chip LED chip;
fig. 2 is a cross-sectional side view of the flip-chip LED chip a-a of fig. 1.
Reference numerals:
10-a growth substrate, 20-a semiconductor multilayer structure, 21-a light emitting region, 22-an electrode region, 31-a dielectric reflective layer, 32-a metal reflective layer, 33-a first via hole, 34-a transparent conductive layer; 40-insulating layer, 41-second via, 50-p electrode, 60-n electrode, 70-passivation layer, 71-third via, 80-p electrode pad, 90-n electrode pad.
Detailed Description
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following description will explain specific embodiments of the present invention with reference to the accompanying drawings. It is obvious that the drawings in the following description are only examples of the invention, and that for a person skilled in the art, other drawings and embodiments can be obtained from these drawings without inventive effort.
Fig. 1 and fig. 2 are schematic structural diagrams of an embodiment of a flip LED chip provided by the present invention, wherein fig. 1 is a top view, and fig. 2 is a sectional side view of the flip LED chip a-a in fig. 1. As can be seen from the figure, the flip LED chip includes: a growth substrate 10; a semiconductor multilayer structure 20 disposed on the surface of the growth substrate 10, including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer stacked in this order, and including a light emitting region 21 and an electrode region 22 on the surface; wherein, the surface of the electrode region 22 is provided with an n electrode 60 which is connected to the n-type semiconductor layer in a penetrating way; the surface of the light emitting region is provided with: the reflecting structure is arranged on the surface of the semiconductor multilayer structure 20 and comprises a dielectric reflecting layer 31 which is arranged on the surface of the semiconductor multilayer structure 20 and is formed by dielectric materials and a metal reflecting layer 32 which is arranged on the surface of the dielectric reflecting layer 31, wherein the dielectric reflecting layer 31 comprises a first through hole 33 filled with conductive materials, and transparent conductive layers 34 are arranged between contact surfaces of the dielectric materials and the conductive materials in the dielectric reflecting layer 31, between contact surfaces of the dielectric materials and the metal reflecting layer 32 and between the dielectric reflecting layer 31 and the contact surfaces of the semiconductor multilayer structure 20; an insulating layer 40 disposed on the surface of the reflective structure and on the sidewall of the light-emitting region 21, wherein the insulating layer 40 is provided with a second via 41 communicated to the reflective structure; and a p-electrode 50 connected to the reflective structure through the second via hole 41 of the insulating layer 40. The flip-chip LED chip further comprises: a passivation layer 70 connecting the n-electrode 60 and the p-electrode 50, and an n-electrode pad 90 formed on the surface of the passivation layer 70 and connected to the n-electrode 60 through a third via hole opened in the passivation layer 70, and a p-electrode pad 80 connected to the p-electrode 50.
In this embodiment, the growth substrate 10 may be a transparent substrate such as sapphire or silicon carbide, and the insulating layer 40 and the passivation layer 70 are made of SiO2Layers, SiON layers, SiN layers, etc. The reflective structure is composed of a metal reflective layer 32 and a dielectric reflective layer 31, the metal reflective layer 32 is formed of a conductive metal having a high reflectivity, such as Ag, Al, etc., and has a thickness of
The dielectric reflective layer 31 is formed on the surface of the metal reflective layer 32 with a thickness of
The material can be SiO2SiN and Al2O3And conductive first through holes 33 filled with a conductive material therein are regularly opened in the dielectric reflective layer 31. Here, the conductive material filled in the first via hole 33 may be arbitrarily selected according to actual requirements as long as the requirement of conductivity is satisfied. In addition, the number of the first through holes 33 in the dielectric reflective layer 31, the form of opening the first through holes 33, the size of the first through holes 33, and the like are not limited to a specific theory, and in theory, as shown in fig. 1, the first through holes 33 are uniformly provided on the dielectric reflective layer. The smaller the number and the size of the first through holes are, the stronger the reflection capability of the dielectric reflection layer is, but the conductivity of the chip is affected by the too small number of the first through holes, so that the conductivity is improved while the reflectivity is ensured according to proper setting of actual conditions.
In another embodiment, the conductive material filled in the first via 33 of the dielectric reflective layer 31 is the same as the material of the metal reflective layer 32, so that the conductive material filled in the first via 33 can reflect the light emitted from the semiconductor multilayer structure 20 except for connecting the metal reflective layer 32 and the semiconductor multilayer structure 20, thereby further improving the reflectivity of the reflective structure.
The transparent conductive layer 34 is disposed between the contact surfaces of the dielectric material and the conductive material in the dielectric reflective layer 31, between the contact surfaces of the dielectric material and the metal reflective layer 32, and between the contact surfaces of the dielectric reflective layer 31 and the semiconductor multilayer structure 20, to help current diffusion and enhance adhesion between the metal reflective layer 32 and the dielectric material. The thickness of the transparent conductive layer 34 disposed between the dielectric reflective layer 31 and the contact surface of the semiconductor multilayer structure 20 is defined so as not to affect chip light extraction
Between the contact surfaces of the dielectric material and the conductive material in the dielectric reflective layer 31,The thickness of the transparent conductive layer 34 disposed between the dielectric material and the contact surface of the metal reflective layer 32 is
The material of the transparent conductive layer 34 can be selected according to practical applications, as long as the material can meet the requirement of forming ohmic contact with a luminescent material and simultaneously does not affect the light emission of the chip, for example, an ITO transparent conductive layer is used.
In the preparation process, after a semiconductor multilayer structure 20 (an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer) is grown on the surface of a growth substrate 10 (such as sapphire and the like), the electrode region 22 is etched to form an n-electrode hole; then, a layer with the thickness of
The transparent conductive layer 34; then depositing a layer with a thickness of
May extend to the n-electrode hole sidewall and is opened according to a rule (first via 33); then depositing a layer with the thickness of
The transparent conductive layer 34; finally, the conductive material and the metal reflection layer 32 in the first through hole 33 are deposited (when the conductive material and the metal reflection layer 32 in the first through hole 33 are different, the conductive material in the first through hole 33 is deposited first, then the metal reflection layer 32 is deposited, when the conductive material and the metal reflection layer 32 in the first through hole 33 are the same, the metal reflection layer 32 is deposited directly on the surface of the dielectric material with the first through hole 33 formed, the preparation of the reflection structure is completed, then, the insulating layer 40 is deposited on the surface of the reflection structure and the structural side wall (the side wall of the n-electrode hole) of the light-emitting region 21, the second through hole 41 is formed on the formed insulating layer 40, then, the p-electrode 50 is formed on the second through hole 41, the n-electrode 60 is formed in the n-electrode hole, then, the passivation layer is deposited on the surface of the chip structure, and a part of the p-electrode 60 and the p-electrode 50 are selectedAnd a third through hole 71 is formed at the corresponding position, so that an n electrode pad 90 and a p electrode pad 80 are formed, and the preparation of the flip LED chip is completed.
It should be noted that the above embodiments can be freely combined as necessary. The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (6)
1. A flip LED chip, comprising:
growing a substrate;
the semiconductor multilayer structure is arranged on the surface of the growth substrate and comprises an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer which are sequentially stacked, and a light emitting region and an electrode region are formed on the surface of the semiconductor multilayer structure; wherein the content of the first and second substances,
an n electrode penetrating and connected to the n-type semiconductor layer is arranged on the surface of the electrode area;
the surface of the light emitting area is provided with:
the reflecting structure is arranged on the surface of the semiconductor multilayer structure and comprises a dielectric reflecting layer which is arranged on the surface of the semiconductor multilayer structure and is formed by dielectric materials and a metal reflecting layer which is arranged on the surface of the dielectric reflecting layer, the dielectric reflecting layer comprises a first through hole filled with conductive materials, and transparent conductive layers are arranged between contact surfaces of the dielectric materials and the conductive materials in the dielectric reflecting layer, between contact surfaces of the dielectric materials and the metal reflecting layer and between contact surfaces of the dielectric reflecting layer and the semiconductor multilayer structure;
the insulating layer is arranged on the surface of the reflecting structure and the side wall of the light-emitting region structure, and a second through hole communicated with the reflecting structure is arranged in the insulating layer;
a p-electrode conductively connected to the reflective structure through the second via hole of the insulating layer;
the flip-chip LED chip further comprises: the passivation layer is connected and arranged on the surfaces of the n electrode and the p electrode, and an n electrode bonding pad connected with the surface of the passivation layer and connected to the n electrode through a third through hole formed in the passivation layer and a p electrode bonding pad connected to the p electrode are formed.
2. The flip LED chip of claim 1, wherein the transparent conductive layer disposed between the dielectric reflective layer and the contact surface of the semiconductor multilayer structure has a thickness of
3. The flip LED chip of claim 1, wherein the transparent conductive layer disposed between the contact surfaces of the dielectric material and the conductive material in the dielectric reflective layer and between the contact surfaces of the dielectric material and the metal reflective layer has a thickness of
4. The flip LED chip of claim 1, 2 or 3, wherein the dielectric reflective layer has a thickness of
5. The flip LED chip of claim 1, 2 or 3, wherein the metal reflective layer is an Ag reflective layer or an Al reflective layer with a thickness of
6. The flip LED chip of claim 1, 2 or 3, wherein the conductive material filled in the first via in the dielectric reflective layer is the same as the material of the metallic reflective layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120117251.3U CN214313229U (en) | 2021-01-15 | 2021-01-15 | Flip LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120117251.3U CN214313229U (en) | 2021-01-15 | 2021-01-15 | Flip LED chip |
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| Publication Number | Publication Date |
|---|---|
| CN214313229U true CN214313229U (en) | 2021-09-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120117251.3U Active CN214313229U (en) | 2021-01-15 | 2021-01-15 | Flip LED chip |
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| CN (1) | CN214313229U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116487502A (en) * | 2023-06-25 | 2023-07-25 | 晶能光电股份有限公司 | Flip LED chip and preparation method thereof |
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- 2021-01-15 CN CN202120117251.3U patent/CN214313229U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116487502A (en) * | 2023-06-25 | 2023-07-25 | 晶能光电股份有限公司 | Flip LED chip and preparation method thereof |
| CN116487502B (en) * | 2023-06-25 | 2023-09-12 | 晶能光电股份有限公司 | Flip LED chip and preparation method thereof |
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Address after: 330096 No. 699, Aixi Hubei Road, Nanchang High-tech Development Zone, Jiangxi Province Patentee after: Jingneng optoelectronics Co.,Ltd. Address before: 330096 No. 699, Aixi Hubei Road, Nanchang High-tech Development Zone, Jiangxi Province Patentee before: LATTICE POWER (JIANGXI) Corp. |