CN210182405U - Flip LED chip and LED - Google Patents
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- CN210182405U CN210182405U CN201921198676.0U CN201921198676U CN210182405U CN 210182405 U CN210182405 U CN 210182405U CN 201921198676 U CN201921198676 U CN 201921198676U CN 210182405 U CN210182405 U CN 210182405U
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Abstract
The utility model provides a flip-chip LED chip and emitting diode, this flip-chip LED chip form at the insulating refraction layer of first transparent conducting layer top and form the metal reflection stratum in insulating refraction layer top including forming the first transparent conducting layer on second semiconductor layer. Due to the difference of the high refractive index and the low refractive index of the insulating refraction layer and the metal reflection layer, the first transparent conducting layer, the insulating refraction layer and the metal reflection layer form a total reflection structure, and the light emitting efficiency of the LED chip is enhanced. The first through hole and the second through hole are formed in the insulating refraction layer, the metal reflection layer is formed in the first through hole and the second through hole and is connected with the first transparent conducting layer and the second semiconductor layer respectively, and therefore the adhesion force between the metal reflection layer and the insulating refraction layer is improved, and the problem that the LED chip is peeled due to poor adhesion force between the metal reflection layer and the insulating refraction layer is avoided.
Description
Technical Field
The utility model relates to a semiconductor lighting technology field, concretely relates to flip-chip LED chip and emitting diode.
Background
A Light Emitting Diode (LED) is a semiconductor device that emits light by using energy released during carrier recombination, and particularly, a flip-chip LED chip thereof has the advantages of no wire bonding, high light efficiency, good heat dissipation, and the like, and is widely focused and developed as a future development trend.
At present, flip chips mainly use Ag or DBR as the reflective layer (Mirror). Such a reflective layer structure has a series of problems, for example, the upper limit of the reflectivity of Ag is about 95%, which is difficult to further improve, and further difficult to improve the light extraction efficiency of the chip; the DBR has a certain directivity in reflection, and as an insulating layer, the DBR has an unsatisfactory electric and heat conduction effect and is not favorable for heat dissipation of the chip.
SUMMERY OF THE UTILITY MODEL
Aiming at the defects of the reflecting structure of the flip LED chip in the prior art, the utility model provides a flip LED chip and a light emitting diode, wherein an insulating refraction layer and a metal reflecting layer are sequentially formed above a transparent conducting layer, thereby improving the reflecting effect of the whole structure through the difference of high and low refractive indexes; in addition, a first through hole and a second through hole are formed in the insulating refraction layer, and the metal reflection layer is formed in the insulating refraction layer and the first through hole and the second through hole, so that the metal reflection layer can be connected with the insulating refraction layer and simultaneously connected with the first transparent conducting layer and the second semiconductor layer through the first through hole and the second through hole respectively, and a series of problems caused by the fact that the emission metal layer is not adhered to the insulating refraction layer are solved.
According to the utility model discloses an aspect, the utility model provides a flip-chip LED chip, include:
a light emitting structure epitaxial layer, the light emitting structure epitaxial layer comprising: the light-emitting structure comprises a first semiconductor layer, an active layer formed on the first semiconductor layer, and a second semiconductor layer which is formed above the active layer and has the opposite conductivity type to that of the first semiconductor layer, wherein a first semiconductor groove is formed in the epitaxial layer of the light-emitting structure, and the bottom of the first semiconductor groove is positioned in the first semiconductor layer;
a first transparent conductive layer formed over the second semiconductor layer;
an insulating refractive layer formed over the transparent conductive layer, the insulating refractive layer covering the first transparent conductive layer, the second semiconductor layer around the first transparent conductive layer, and the first semiconductor layer at the bottom of the first semiconductor trench;
a metal reflective layer formed over the insulating refractive layer, the metal reflective layer covering the insulating refractive layer.
Optionally, a first through hole and a second through hole are formed in the insulating refraction layer, the first through hole is formed above the first transparent conductive layer, and the second through hole is formed above the second semiconductor layer.
Optionally, the metal reflective layer is formed in the first via and the second via and is connected to the first transparent conductive layer through the first via and is connected to the second semiconductor layer through the second via.
Optionally, the first through hole enables the surrounding insulating refraction layer and the first transparent conductive layer at the bottom of the first through hole to form a concave structure, and the adjacent second through hole enables the surrounding insulating refraction layer and the second semiconductor layer below the insulating refraction layer to form a convex structure.
Optionally, a second transparent conductive layer is further provided between the insulating refraction layer and the metal reflection layer.
According to the utility model discloses a second aspect, the utility model provides a flip-chip LED chip, include:
a light emitting structure epitaxial layer, the light emitting structure epitaxial layer comprising: the light-emitting structure comprises a first semiconductor layer, an active layer formed on the first semiconductor layer, and a second semiconductor layer which is formed above the active layer and has the opposite conductivity type to that of the first semiconductor layer, wherein a first semiconductor groove is formed in the epitaxial layer of the light-emitting structure, and the bottom of the first semiconductor groove is positioned in the first semiconductor layer;
the insulating refraction layer is formed on the surface of the epitaxial layer of the light-emitting structure and the side wall of the first semiconductor groove and is used for insulating refraction;
a second transparent conductive layer formed over the insulating and refractive layer, the second transparent conductive layer being electrically connected to the second semiconductor layer;
a metal reflective layer formed over the second transparent conductive layer, the metal reflective layer covering the second transparent conductive layer.
Optionally, a first through hole and a second through hole are formed in the insulating refraction layer, and the second transparent conductive layer is formed in the first through hole and the second through hole to be electrically connected to the second semiconductor layer.
Optionally, the first through hole enables the surrounding insulating refraction layer and the second semiconductor layer at the bottom of the first through hole to form a concave structure, and the adjacent second through hole enables the surrounding insulating refraction layer and the second semiconductor layer below the insulating refraction layer to form a convex structure.
Optionally, an area of the insulating and refracting layer remaining between adjacent second through holes is less than an area of the insulating and refracting layer remaining around the first through hole.
Optionally, the first and second through holes form a through hole having an opening size larger than a bottom size.
Optionally, the second through holes are distributed at the edge of the LED chip and around the first semiconductor trench, and the first through holes are distributed in the rest of the LED chip.
Optionally, the sum of the areas of the cross sections of the second through holes accounts for 1% to 10% of the area of the cross section of the LED chip.
The number of the convex structures is less than that of the first through holes.
According to the utility model discloses a third aspect, the utility model provides a light emitting diode, light emitting diode includes the base plate, welds LED chip and cover on the base plate the LED chip is connected encapsulation colloid on the base plate, the LED chip includes the utility model discloses first aspect and second aspect flip-chip LED chip, flip-chip LED chip have weld extremely first and second electrode structure on the base plate.
As described above, the utility model discloses a flip-chip LED chip and emitting diode have following technological effect:
the utility model discloses a flip-chip LED chip is formed with transparent conducting layer above the second semiconductor of light-emitting structure epitaxial layer, and transparent conducting layer top forms insulating refraction layer and metal reflection stratum in proper order, and transparent conducting layer, insulating refraction layer and metal reflection stratum form omnidirectional reflection structure, through the difference of the high low refractive index of insulating refraction layer and metal reflection stratum, improve whole reflection structure's reflectivity, and then improve the light-emitting efficiency of LED chip.
The first through hole and the second through hole are formed in the insulating refraction layer, the first through hole and the second through hole can form through holes with different apertures and different shapes, the metal reflection layer is in contact with the first transparent conducting layer (namely the ohmic contact layer of the second semiconductor layer) and the second semiconductor layer through the first through hole and the second through hole, therefore, the conductivity of the metal reflection layer and the second semiconductor layer cannot be influenced, the metal reflection layer is connected with the transparent conducting layer and the second semiconductor layer, the problem that the adhesion force of the metal reflection layer and the adhesion force of the insulating refraction layer are poor is solved, and the peeling phenomenon in the later stage of an LED chip is avoided. Or the bottom deposition second transparent conducting layer of first through-hole and second through-hole in insulating refraction layer and the insulating refraction layer, then deposit the metal reflecting layer in second transparent conducting layer top, avoid metal reflecting layer and insulating refraction layer direct contact from this, can not influence the electric connection of metal reflecting layer and first transparent conducting layer again simultaneously, can improve the poor problem of metal reflecting layer and insulating refraction layer adhesion equally, and then avoid the LED chip peeling phenomenon to appear in the later stage.
The light emitting diode comprises the LED chip, and therefore the beneficial technical effects are also achieved.
Drawings
The features and advantages of the invention will be more clearly understood by reference to the accompanying drawings, which are schematic and should not be understood as imposing any limitation on the invention, in which:
fig. 1 shows a schematic structural diagram of a flip-chip LED chip according to an embodiment of the present invention.
Fig. 2 is a schematic structural view illustrating the formation of a first via hole and a second via hole in the insulating and refractive layer shown in fig. 1.
Fig. 3 is an enlarged view of the structure of the first via hole shown in fig. 2.
Fig. 4 is an enlarged view of the structure of the second via hole shown in fig. 2.
Fig. 5 is a schematic distribution diagram of the first through holes and the second through holes on the LED chip.
Fig. 6 is a schematic distribution diagram of the first through holes and the second through holes on the LED chip in a preferred embodiment of the first embodiment.
Fig. 7 is a schematic structural diagram of a flip LED chip according to an embodiment of the present invention.
Fig. 8 is a schematic structural diagram of a flip-chip LED chip according to a third embodiment of the present invention.
Fig. 9 is a schematic structural diagram of a light emitting diode according to a fourth embodiment.
Fig. 10 is a schematic structural diagram of a light emitting diode according to a fifth embodiment.
Fig. 11 is a schematic structural diagram of a light emitting diode according to a sixth embodiment.
Reference numerals
100 substrate
100-1 light emitting structure epitaxial layer
101 first semiconductor layer
102 active layer
103 second semiconductor layer
1031 first transparent conductive layer
1032 second transparent conductive layer
104 insulating and refracting layer
1041 first via hole
1042 second through hole
105 metal reflective layer
106 first semiconductor trench
107 cutting groove
108 first electrode
109 second electrode
200 substrate
201 conductive line
2021 first bonding pad
2022 second bonding pad
203 packaging colloid
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention.
In the following embodiments of the present invention, words indicating orientation, such as "upper", "lower", "left", "right", "horizontal", "vertical", etc., are referred to only for better understanding of the present invention by those skilled in the art, and should not be construed as limiting the present invention.
Example one
As shown in fig. 1, in the present embodiment, a light emitting structure epitaxial layer 100-1 is formed over a substrate 100, and the light emitting structure epitaxial layer 100-1 includes a first semiconductor layer 101, an active layer 102 formed over the first semiconductor layer 101, and a second semiconductor layer 103 formed over the active layer 102, which are sequentially formed over the substrate 100. In this embodiment, the substrate 100 may be a sapphire or GaN-based substrate, the first semiconductor layer 101 is an N-type semiconductor layer, and the second semiconductor layer 103 is a P-type semiconductor layer. The reverse is also true, i.e., the first semiconductor layer 101 is a P-type semiconductor layer and the second semiconductor layer 103 is an N-type semiconductor layer. A first semiconductor groove 106 is formed in the light emitting structure epitaxial layer 100-1, and the bottom of the first semiconductor groove 106 is located in the first semiconductor layer 101. In a preferred embodiment of the present embodiment, a cutting groove 107 is further formed between two adjacent first semiconductor grooves 106, and the cutting groove 107 is used for cutting the chip at a later stage.
As also shown in fig. 1, the second semiconductor layer 103 is formed with a first transparent conductive layer 1031, in a preferred embodiment of the present embodiment, the first transparent conductive layer 1031 is preferably ITO (Indium tin oxide), and the first transparent conductive layer 1031 is used as an ohmic contact layer of the second semiconductor layer 103 after being annealed. For example, the ITO first transparent conductive layer 1031 may be subjected to a rapid annealing process at 700 ℃ or lower to form an ohmic contact layer, as is well known in the art.
Over the first transparent conductive layer 1031, an insulating and refractive layer 104 is formed, which may be SiO2Or MgF2Or Al2O3Or SiON, etc., in the preferred embodiment of the present embodiment, the insulating refractive layer 104 is SiO2Layer, and the SiO above the first transparent conductive layer 10312The thickness of the layer is lambda/(4 n), where lambda is the wavelength of the incident light and n is SiO2Is used as a refractive index of (1). For example, in a blue LED chip, since the thickness of the blue wavelength light ranges from 500nm to 650nm, SiO2Has a refractive index of 1.46, in this case SiO2The thickness of the layer is about 85nm to 110 nm.
Referring to fig. 2 to 4, in the preferred embodiment of the present embodiment, the insulating and refractive layer 104 has a first via 1041 and a second via 1042 formed therein in different patterns. The first via 1041 and the second via 1042 may be formed by a method commonly used in the art. For example, a patterned mask is first formed over the insulating and refractive layer, and then the insulating and refractive layer 104 is etched using the patterned mask as a mask to form the first via 1041 and the second via 1042. As shown in fig. 5, the first via hole 1041 is formed in the insulation refractive layer 104 above the first transparent conductive layer 1031, and the second via hole 1042 is formed around the first semiconductor trench 106 and the dicing trench 107, and may also be formed at an edge portion of the chip, so that the bottom of the first via hole is above the first transparent conductive layer 1031, and the bottom of the second via hole 1042 is above the second semiconductor layer 103. As can also be seen from fig. 5, in the preferred embodiment of the present embodiment, the number of the second through holes 1042 is less than that of the first through holes 1041, and the number of the second through holes distributed around the first semiconductor trench is less than that of the second through holes distributed at the edge of the LED chip. In a preferred embodiment of the present embodiment, the sum of the areas of the cross sections of the second through holes accounts for 1% to 10% of the area of the cross section of the LED chip, and more preferably ranges from 3% to 8%. As shown in fig. 3, the opening size of the first through hole 1041 is greater than or equal to the bottom size, and most of the insulating refractive layer 104 around the first through hole 1041 is reserved to increase the reflection of the incident light. In a preferred embodiment, as shown in fig. 3, the first through hole 1041 allows the insulating and refractive layer 104 around it and the first transparent conductive layer 1031 at the bottom thereof to form a structure similar to a "concave" shape, which facilitates the deposition of the subsequent metal reflective layer.
As shown in fig. 4, the opening size of the second through holes 1042 is greater than or equal to the bottom size thereof, and the area of the insulating and refractive layer 104 remaining between the adjacent second through holes 1042 is smaller than the area of the insulating and refractive layer 104 remaining around the first through holes. In a preferred embodiment, as shown in fig. 4, the insulating refractive layer 104 around the second through hole 1042 and the second semiconductor layer 103 at the bottom thereof form a structure similar to a "convex" shape, which is also beneficial for the deposition of the subsequent metal reflective layer, and accordingly, the contact area of the metal reflective layer and the second semiconductor layer can be increased, and the adhesion can be increased.
In another preferred embodiment of the present invention, as shown in fig. 6, the second through holes 1042 are also distributed around the first semiconductor trenches 106 and the dicing trenches 107, and the edge portions of the chip, the insulating and refractive layer 104 around the second through holes 1042 and the second semiconductor layer 103 at the bottom thereof also form a structure similar to a "convex" shape. And in the preferred embodiment, the number of the "convex" type structures is less than the number of the first through holes.
In this embodiment, the insulating and refractive layer is formed on the bottom and the sidewall of the first semiconductor trench 106, and the second via 1042 is also formed in the insulating and refractive layer 104 at the bottom of the first semiconductor trench 106.
In this embodiment, as shown in fig. 1, the flip LED chip further includes a metal reflective layer 105, and the metal reflective layer, the insulating refraction layer, and the first transparent conductive layer form a total reflection structure odr (omni directional reflector), so as to improve the reflectivity of incident light emitted from the active layer, and thus improve the light-emitting efficiency of the LED chip.
As also shown in fig. 1, the metal reflective layer 105 is formed over the insulating refractive layer 104 and in the first via hole 1041 and the second via hole 1042, whereby the metal reflective layer 105 is in contact with the insulating refractive layer 104, the second semiconductor layer 103 and the first transparent conductive layer 1031, respectively. The structure enables the metal reflecting layer to be in contact with the insulating refraction layer and simultaneously be in contact with the first transparent conducting layer and the second semiconductor layer through the first through hole and the second through hole respectively, so that the problem that the adhesive force of the metal reflecting layer and the insulating refraction layer is poor is solved, the phenomenon of peeling of the LED chip due to poor adhesive force in the later period is avoided, and the service life of the LED chip is prolonged.
Example two
The present embodiment also provides a flip LED chip, and the same parts as those in the first embodiment are not described again, except that:
as shown in fig. 7, a second transparent conductive layer 1032 is further provided between the insulating refractive layer 104 and the metal reflective layer 105 of the flip LED chip of the present embodiment. Meanwhile, the second transparent conductive layer 1032 is also formed at the bottom of the first via 1041 and the second via 1042. The second transparent conductive layer 1032 may be the same material as the first transparent conductive layer 1031, for example, ITO.
The second transparent conductive layer 1032 allows the metal reflective layer 105 not to contact the insulating refractive layer 104 but to be formed over the second transparent conductive layer, thereby not only solving the problem of poor adhesion between the metal reflective layer and the insulating refractive layer, but also not affecting the conductivity between the metal reflective layer and the second semiconductor layer.
The first transparent conducting layer, the insulating refraction layer, the second transparent conducting layer and the metal reflection layer also form a total reflection structure, so that the reflectivity of incident light emitted by the active layer is improved, and the light-emitting rate of the LED chip is improved.
EXAMPLE III
The present embodiment also provides a flip-chip LED chip,
as shown in fig. 8, the LED chip of the present embodiment also includes a light emitting structure epitaxial layer 100-1, which is the same as the first embodiment, and is not repeated herein, but is different from the first embodiment in that:
in the flip-chip LED chip of the present embodiment, the insulating and refractive layer 104 is formed on the surface of the light emitting structure epitaxial layer 100-1 and the sidewall of the first semiconductor trench 106, i.e. the insulating and refractive layer 104 is directly formed above the second semiconductor layer 103 and above the first semiconductor layer 102 at the bottom of the first semiconductor trench 106. As in the first embodiment, SiO can also be selected for the insulating and refractive layer 1042Or MgF2Or Al2O3Or SiON and the like.
A second transparent conductive layer 1032 is formed over the insulating and refractive layer, and the second transparent conductive layer is electrically connected to the second semiconductor layer. In a preferred embodiment of the present embodiment, the second transparent conductive layer 1032 is preferably ITO (Indium tin oxide), and the second transparent conductive layer 1031 is used as an ohmic contact layer of the second semiconductor layer 103 after being annealed. For example, the second transparent conductive layer 1032 of ITO may be subjected to a rapid annealing process at 700 deg.c or lower to form an ohmic contact layer, as is well known in the art.
A metal reflective layer 105 is formed over the second transparent conductive layer, covering the second transparent conductive layer.
In the LED of the present embodiment, the metal reflective layer 105 and the second transparent conductive layer 1032 can form a total reflection structure odr (total reflection) as well as the insulating refractive layer 104, so as to improve the reflectivity of incident light emitted from the active layer, thereby improving the light-emitting efficiency of the LED chip.
In addition, the insulating and refractive layer 104 of the present embodiment is also formed with the first through hole 1041 and the second through hole 1042 shown in fig. 3 and 4, and the second transparent conductive layer 1032 is formed in the first through hole and the second through hole, thereby achieving electrical connection with the second semiconductor layer 103. In the present embodiment, the second through holes 1042 are also distributed around the first semiconductor trench 106 and over the second semiconductor layer around the dicing trench 107 and the edge portion of the LED chip, and the first through holes 1041 are formed in the rest of the LED chip (see also fig. 5 and 6). The rest of the arrangement of the first through hole and the second through hole is the same as that of the first through hole and the second through hole in the first embodiment, and details are not repeated here.
Through setting up above-mentioned first through-hole and second through-hole, be favorable to the deposit of follow-up second transparent conducting layer, the insulating refraction layer that forms above the second semiconductor layer is covered and surrounds by second transparent conducting layer, and the metal refraction layer is formed above second transparent conducting layer, not be connected with insulating refraction layer direct contact. The adhesion between the second transparent conducting layer and the second semiconductor layer increases the adhesion of the whole structure, so that the influence of poor adhesion between the insulating refraction layer and the second semiconductor layer can be weakened, the phenomenon of peeling of the LED chip due to poor adhesion in the later period is avoided, and the service life of the LED chip is prolonged.
Example four
The present embodiment provides a light emitting diode, as shown in fig. 9, the light emitting diode includes a substrate 200, an LED chip soldered on the substrate 200, and an encapsulant 203 covering the LED chip and connected to the substrate 200.
In a preferred embodiment of the present invention, the LED chip includes a flip-chip LED chip according to the first embodiment of the present invention, and details thereof are not described herein.
As shown in fig. 9, a conductive line 201, and a first land 2021 and a first land 2022 are provided on a substrate 200. The LED chip includes a first electrode 108 and a second electrode 109, and the first electrode 108 and the second electrode 109 are soldered to the first and second soldering regions 2021 and 2022, respectively, thereby soldering the LED chip to the substrate 200.
EXAMPLE five
The present embodiment also provides a light emitting diode, as shown in fig. 10, which includes a substrate 200, an LED chip soldered on the substrate 200, and an encapsulant 203 covering the LED chip and connected to the substrate 200.
The same parts as those in the third embodiment are not repeated, but the LED chip in this embodiment includes the flip LED chip provided in the second embodiment, and thus detailed description thereof is omitted.
EXAMPLE six
The present embodiment also provides a light emitting diode, as shown in fig. 11, which includes a substrate 200, an LED chip soldered on the substrate 200, and an encapsulant 203 covering the LED chip and connected to the substrate 200.
The same parts as those in the fourth and fifth embodiments are not repeated, but the LED chip in this embodiment includes the flip LED chip provided in the third embodiment, and thus detailed description thereof is omitted.
As described above, the utility model discloses a flip-chip LED chip and emitting diode have following technological effect:
the utility model discloses a flip-chip LED chip is formed with transparent conducting layer above the second semiconductor of light-emitting structure epitaxial layer, and transparent conducting layer top forms insulating refraction layer and metal reflection stratum in proper order, and transparent conducting layer, insulating refraction layer and metal reflection stratum form omnidirectional reflection structure, through the difference of the high low refractive index of insulating refraction layer and metal reflection stratum, improve whole reflection structure's reflectivity, and then improve the light-emitting efficiency of LED chip.
The first through hole and the second through hole are formed in the insulating refraction layer, the first through hole and the second through hole can form through holes with different apertures and different shapes, the metal reflection layer is in contact with the first transparent conducting layer (namely the ohmic contact layer of the second semiconductor layer) and the second semiconductor layer through the first through hole and the second through hole, therefore, the conductivity of the metal reflection layer and the second semiconductor layer cannot be influenced, the metal reflection layer is connected with the transparent conducting layer and the second semiconductor layer, the problem that the adhesion force of the metal reflection layer and the adhesion force of the insulating refraction layer are poor is solved, and the peeling phenomenon in the later stage of an LED chip is avoided. Or the bottom deposition second transparent conducting layer of first through-hole and second through-hole in insulating refraction layer and the insulating refraction layer, then deposit the metal reflecting layer in second transparent conducting layer top, avoid metal reflecting layer and insulating refraction layer direct contact from this, can not influence the electric connection of metal reflecting layer and first transparent conducting layer again simultaneously, can improve the poor problem of metal reflecting layer and insulating refraction layer adhesion equally, and then avoid the LED chip peeling phenomenon to appear in the later stage.
Or the utility model discloses a LED chip can be in the insulating refraction layer of the direct deposit of second semiconductor layer top, and insulating refraction layer top deposits second transparent conducting layer and metal reflecting layer in proper order, forms first through-hole and second through-hole in the insulating refraction layer equally, and the transparent conducting layer of second forms in first through-hole and second through-hole, realizes being connected with the second semiconductor layer. From this for insulating refraction layer is covered and surrounds by the transparent conducting layer of second, can avoid metal reflecting layer and insulating refraction layer direct contact equally, can not influence the electric connection of metal reflecting layer and first transparent conducting layer again simultaneously, can improve the poor problem of metal reflecting layer and insulating refraction layer adhesion equally, and then avoids LED chip later stage to appear skinning phenomenon.
The light emitting diode comprises the LED chip, and therefore the beneficial technical effects are also achieved.
The above-described embodiments are merely illustrative of the principles of the present invention and its efficacy, rather than limiting the same, and various modifications and variations can be made by those skilled in the art without departing from the spirit and scope of the invention, such modifications and variations all falling within the scope of the appended claims.
Claims (16)
1. A flip LED chip, comprising:
a light emitting structure epitaxial layer, the light emitting structure epitaxial layer comprising: the light-emitting structure comprises a first semiconductor layer, an active layer formed on the first semiconductor layer, and a second semiconductor layer which is formed above the active layer and has the opposite conductivity type to that of the first semiconductor layer, wherein a first semiconductor groove is formed in the epitaxial layer of the light-emitting structure, and the bottom of the first semiconductor groove is positioned in the first semiconductor layer;
a first transparent conductive layer formed over the second semiconductor layer;
an insulating refractive layer formed over the first transparent conductive layer, the insulating refractive layer covering the first transparent conductive layer, the second semiconductor layer around the first transparent conductive layer, and the first semiconductor layer at the bottom of the first semiconductor trench;
a metal reflective layer formed over the insulating refractive layer, the metal reflective layer covering the insulating refractive layer.
2. The flip LED chip of claim 1, wherein the insulating refractive layer has a first via formed therein over the first transparent conductive layer and a second via formed therein over the second semiconductor layer.
3. The flip LED chip of claim 2, wherein the metal reflective layer is formed in the first via and the second via and is connected to the first transparent conductive layer through the first via and is connected to the second semiconductor layer through the second via.
4. The flip LED chip of claim 2, wherein the first via hole has the surrounding insulating and refractive layer form a "concave" structure with the first transparent conductive layer at the bottom of the first via hole, and the adjacent second via hole has the surrounding insulating and refractive layer form a "convex" structure with the second semiconductor layer under the insulating and refractive layer.
5. The flip LED chip of any one of claims 1-4, further comprising a second transparent conductive layer between the insulating refractive layer and the metallic reflective layer.
6. A flip LED chip, comprising:
a light emitting structure epitaxial layer, the light emitting structure epitaxial layer comprising: the light-emitting structure comprises a first semiconductor layer, an active layer formed on the first semiconductor layer, and a second semiconductor layer which is formed above the active layer and has the opposite conductivity type to that of the first semiconductor layer, wherein a first semiconductor groove is formed in the epitaxial layer of the light-emitting structure, and the bottom of the first semiconductor groove is positioned in the first semiconductor layer;
the insulating refraction layer is formed on the surface of the epitaxial layer of the light-emitting structure and the side wall of the first semiconductor groove and is used for insulating refraction;
a second transparent conductive layer formed over the insulating and refractive layer, the second transparent conductive layer being electrically connected to the second semiconductor layer;
a metal reflective layer formed over the second transparent conductive layer, the metal reflective layer covering the second transparent conductive layer.
7. The flip LED chip of claim 6, wherein the insulating refractive layer has a first via and a second via formed therein, and the second transparent conductive layer is formed in the first via and the second via to be electrically connected to the second semiconductor layer.
8. The flip LED chip of claim 7, wherein the first via hole has the surrounding insulating and refractive layer forming a "concave" structure with the second semiconductor layer at the bottom of the first via hole, and the adjacent second via hole has the surrounding insulating and refractive layer forming a "convex" structure with the second semiconductor layer under the insulating and refractive layer.
9. The flip LED chip of claim 2 or 7, wherein an area of the insulating refractive layer remaining between adjacent second vias is less than an area of the insulating refractive layer remaining around the first via.
10. The flip LED chip of claim 9, wherein the first and second vias form vias having an opening size greater than or equal to a bottom size.
11. The flip LED chip of claim 2 or 7, wherein the second vias are distributed around the edge of the LED chip and the first semiconductor trench, and the first vias are distributed in the rest of the LED chip.
12. The flip LED chip of claim 11, wherein the sum of the areas of the cross-sections of the second vias accounts for 1% to 10% of the cross-sectional area of the LED chip.
13. The flip LED chip of claim 11, wherein the number of second vias is less than the number of first vias.
14. The flip LED chip of claim 11, wherein the number of second vias distributed around the first semiconductor trench is less than the number of second vias distributed at the edge of the LED chip.
15. The flip LED chip of claim 4 or 8, wherein the number of "bump" type structures is less than the number of first vias.
16. A light emitting diode comprising a substrate, an LED chip soldered on the substrate, and an encapsulant covering the LED chip and attached to the substrate, wherein the LED chip is a flip-chip LED chip according to any one of claims 1-15, the flip-chip LED chip having first and second electrode structures soldered on the substrate.
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| CN201921198676.0U CN210182405U (en) | 2019-07-29 | 2019-07-29 | Flip LED chip and LED |
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| CN201921198676.0U CN210182405U (en) | 2019-07-29 | 2019-07-29 | Flip LED chip and LED |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111446341A (en) * | 2020-03-27 | 2020-07-24 | 华灿光电（浙江）有限公司 | Flip light-emitting diode chip and manufacturing method thereof |
| CN113644180A (en) * | 2021-08-05 | 2021-11-12 | 厦门士兰明镓化合物半导体有限公司 | Flip LED chip and preparation method thereof |
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2019
- 2019-07-29 CN CN201921198676.0U patent/CN210182405U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111446341A (en) * | 2020-03-27 | 2020-07-24 | 华灿光电（浙江）有限公司 | Flip light-emitting diode chip and manufacturing method thereof |
| CN111446341B (en) * | 2020-03-27 | 2021-08-06 | 华灿光电（浙江）有限公司 | Flip light-emitting diode chip and manufacturing method thereof |
| WO2021190540A1 (en) * | 2020-03-27 | 2021-09-30 | 华灿光电（浙江）有限公司 | Flip light emitting diode chip and manufacturing method therefor |
| CN113644180A (en) * | 2021-08-05 | 2021-11-12 | 厦门士兰明镓化合物半导体有限公司 | Flip LED chip and preparation method thereof |
| CN113644180B (en) * | 2021-08-05 | 2023-01-06 | 厦门士兰明镓化合物半导体有限公司 | Flip LED chip and preparation method thereof |
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