CN109873065B - Semiconductor light-emitting element - Google Patents
Semiconductor light-emitting element Download PDFInfo
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- CN109873065B CN109873065B CN201910209946.1A CN201910209946A CN109873065B CN 109873065 B CN109873065 B CN 109873065B CN 201910209946 A CN201910209946 A CN 201910209946A CN 109873065 B CN109873065 B CN 109873065B
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Abstract
A semiconductor light-emitting element comprises a semiconductor light-emitting sequence, wherein the semiconductor light-emitting sequence comprises a first conductivity type semiconductor layer, a second conductivity type semiconductor layer and a light-emitting layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer from bottom to top; a dielectric layer is arranged below the first conductive type semiconductor layer, and the dielectric layer is provided with a plurality of through openings; a metal layer is arranged below the dielectric layer and is electrically connected with the first conductive type semiconductor layer through a plurality of through openings of the dielectric layer; a front electrode having a pad on the second type conductivity semiconductor layer and electrically connected thereto; an opposite electrode electrically connected to the metal layer; the method is characterized in that: and the metal block is positioned between the dielectric layer below the front electrode pad and the semiconductor light-emitting sequence, the Mohs hardness of the metal block is greater than or equal to 6, and the plurality of through openings are not overlapped with the metal block in the thickness direction. The dielectric layer can be effectively prevented from falling off during routing through the metal block below the front electrode bonding pad.
Description
Technical Field
The present disclosure relates to semiconductor light emitting devices, and more particularly, to a semiconductor light emitting device with wire bonding electrodes.
Background
A light emitting diode is a semiconductor device that converts electrical energy into light. Compared to fluorescent and incandescent bulbs, LEDs have advantages such as low power consumption, semi-permanent life cycle, fast response time, safety, and environmental protection. LEDs are increasingly used as light sources for lighting devices such as various lamps and streetlights, lighting units of liquid crystal display devices, and other indoor and outdoor applications.
Existing light emitting diodes include a horizontal type and a vertical type. The vertical type light emitting diode is obtained by a process of transferring a semiconductor light emitting sequence onto another substrate such as a silicon, silicon carbide or metal substrate and removing an original epitaxial growth substrate, and can effectively improve the technical problems of light absorption, current crowding or poor heat dissipation caused by a support substrate compared with the horizontal type. The substrate transfer is generally a bonding process, and the bonding is mainly metal-metal high-temperature high-pressure bonding, i.e. a metal bonding layer is formed between one side of the semiconductor light-emitting sequence and the substrate. The other side of the semiconductor sequence provides a light-emitting side, the light-emitting side is provided with a wire electrode for supplying current to be injected or discharged, and the substrate below the semiconductor sequence supplies current to be discharged or flowed, so that the light-emitting diode with current vertically passing through the semiconductor light-emitting sequence is formed.
In order to improve the light extraction efficiency, a metal reflection layer or a combination of the metal reflection layer and a dielectric layer is often designed on one side of the metal bonding layer to form an ODR reflection structure, so that the light extraction from one side of the metal bonding layer is reflected to the light extraction side, thereby improving the light extraction efficiency.
However, in the case of using a dielectric layer, the dielectric layer under the light exit-side wiring electrode may easily come off due to the external force of the wiring.
Disclosure of Invention
The invention provides a semiconductor light-emitting element for preventing dielectric layer from falling off, which comprises:
the semiconductor light-emitting sequence comprises a first conductivity type semiconductor layer, a second conductivity type semiconductor layer and a light-emitting layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer from bottom to top;
a dielectric layer is arranged below the first conductive type semiconductor layer, and the dielectric layer is provided with a plurality of through openings;
a metal layer is arranged below the dielectric layer and is electrically connected with the first conductive type semiconductor layer through a plurality of through openings of the dielectric layer;
a front electrode having a pad on the second type conductivity semiconductor layer and electrically connected thereto;
an opposite electrode electrically connected to the metal layer;
the method is characterized in that: and the metal block is positioned between the dielectric layer below the front electrode pad and the semiconductor light-emitting sequence, the Mohs hardness of the metal block is greater than or equal to 6, and the plurality of through openings are not overlapped with the metal block in the thickness direction.
The semiconductor light-emitting sequence is a semiconductor light-emitting sequence obtained by MOCVD or other growth modes, the semiconductor light-emitting sequence is a semiconductor material capable of providing conventional radiation such as ultraviolet, blue light, green, yellow, red, infrared light and the like, specifically can be a material of 200-950 nm, such as common nitride, specifically such as a gallium nitride-based semiconductor light-emitting sequence, the gallium nitride-based semiconductor light-emitting sequence is commonly doped with elements such as aluminum, indium and the like, and mainly provides radiation of 200-550 nm wave bands; or a common AlGaInP-based or AlGaAs-based semiconductor light-emitting sequence which mainly provides radiation of a wave band of 550-950 nm; the semiconductor light-emitting sequence mainly comprises a first conductivity type semiconductor layer, a light-emitting layer and a second conductivity type semiconductor layer; wherein the first type and the second type mean different conductivity types, which may be achieved by N-type doping or P-type doping, respectively.
The dielectric layer may be an insulating dielectric material such as a nitride or oxide or fluoride. The dielectric layer is more preferably a light transmissive insulating dielectric material having a light transmittance of at least 50%. The dielectric layer is preferably a single layer of material or at least two layers.
The metal layer can be a single layer or at least two layers according to different functions, more preferably at least two functional layers, wherein at least one layer can be defined as a metal bonding layer according to the function; the metal bonding layer is a bonding metal material used when bonding the semiconductor light emitting sequence to the supporting substrate, and the bonding metal layer can be a multilayer material or a combination of multilayer materials. The metal layer also comprises a reflecting layer with a reflecting function, and the reflecting layer is positioned between the bonding metal layer and the semiconductor light-emitting sequence.
The dielectric layer may also have a plurality of openings extending through the thickness direction. The metal layer is in electrical contact with the first conductive type semiconductor layer of the semiconductor light emitting sequence through the opening of the dielectric layer.
One side of the second type conductivity semiconductor layer of the semiconductor light-emitting sequence is a light-emitting side. The light-emitting side is provided with a front electrode, preferably, the front electrode at least comprises a bonding pad, and the bonding pad is used for externally injecting current to one side of the second type conductive semiconductor layer or flowing out of one side of the second type conductive semiconductor layer and used for external routing.
The front electrode can be used for a bonding pad electrode of an external routing, and can also preferably comprise an extension part, wherein the extension part is preferably in a strip shape, and at least two extension parts are provided; the extending portion is formed as a light exit side and extends from around the pad electrode at the light exit side, and the current flowing in the second type conductivity semiconductor layer side by the extending portion can be spread uniformly as much as possible in the lateral direction.
More preferably, a metal block is arranged between the dielectric layer part below the pad electrode and the semiconductor light-emitting sequence. One side of the metal block is contacted with the semiconductor light-emitting sequence, the other side is contacted with the dielectric layer, and the side wall in the thickness direction is surrounded by the dielectric layer.
More preferably, the metal block has a mohs hardness of at least 6. More preferably, the mohs hardness is 7 or more. A metal block of high hardness is formed under the land portion to provide a supporting function. When the bonding pad part of the front electrode is wire-bonded, the wire bonding force can be blocked, the dielectric layer below the front electrode is effectively prevented from falling off under the action of the wire bonding force, a hole is avoided, the product quality is improved, the metal block has good adhesion on one side of the semiconductor light-emitting sequence, and the metal block cannot fall off during wire bonding.
More preferably, the metal block is located only below the pad portion. The metal block is titanium, chromium, vanadium, manganese or an alloy comprising at least one of the metals.
More preferably, the area of the metal block under the front electrode pad is at least 1/2 of the pad area.
More preferably, the area of the metal block under the front electrode pad is at most equal to the area of the pad.
More preferably, the metal block under the front electrode does not diffuse with the semiconductor light emitting sequence.
More preferably, the thickness of the metal block is 20-80 nm, the metal block with higher thickness causes a larger height difference of a chip structure, a fault occurs during bonding, and the lower thickness causes an unobvious improvement effect of the bonding wire.
More preferably, the shape of the metal block is consistent with that of the pad electrode, or the metal block can be formed to be thicker at the middle part and thinner at the edge layer on the surface perpendicular to the thickness according to the distribution of the external wire bonding force.
The metal block may also comprise other metal layers, in particular other metal layers such as metals which may have a high reflectivity, such as aluminum, silver or an aluminum alloy or a silver alloy; the shape may be a block, dot or cluster, and the thickness is 5 to 80nm, more preferably 20 to 50 nm. The high-reflectivity metal is formed between the metal block with high Mohs hardness and the semiconductor light-emitting sequence.
More preferably, the opposite electrode is electrically connected to the first conductivity type semiconductor layer and located on the same side of the semiconductor light emitting sequence as the front electrode, and the substrate is an insulating substrate.
More preferably, the metal block comprises at least one of titanium, chromium, vanadium, manganese or an alloy of one of the materials.
More preferably, a substrate is disposed below the metal layer, the substrate is a conductive substrate, and the substrate is disposed between the opposite electrode and the metal layer.
Or, a substrate is arranged below the metal layer, the substrate is an insulating substrate, and the opposite electrode and the front electrode are positioned on the same side of the semiconductor light-emitting sequence.
The substrate can be an electric conduction substrate, a non-electric conduction substrate, a light transmission substrate or a heat radiation substrate, the electric conduction substrate is silicon, silicon carbide or a metal substrate, and the metal substrate is preferably a copper, tungsten or molybdenum substrate; the non-conductive substrate may be an aluminum nitride, sapphire substrate, or the like; the heat dissipating substrate is a ceramic substrate having a high heat dissipating efficiency, such as aluminum nitride.
More preferably, the semiconductor light emitting sequence comprises at least two semiconductor light emitting sequences, and the at least two semiconductor light emitting sequences are supported by the same supporting substrate. The sidewalls of the semiconductor light emitting sequence are separated and the bottom is connected to the supporting substrate through a metal layer.
Drawings
Fig. 1 to 8 are schematic structural views of a semiconductor light emitting device according to a first embodiment.
Fig. 9 is a schematic structural view of a semiconductor light emitting element according to a second embodiment.
Fig. 10 is a schematic structural view of a semiconductor light emitting element according to a third embodiment.
Fig. 11 is a schematic structural view of a semiconductor light emitting element according to a fourth embodiment.
Fig. 12 is a schematic diagram of a package structure according to a fifth embodiment.
Detailed Description
The structure of the semiconductor light emitting element of the present invention will be described in detail with reference to the schematic drawings, and before further describing the present invention, it will be understood that the present invention is not limited to the specific embodiments described below, since modifications can be made to the specific embodiments. It is also to be understood that the embodiments are presented by way of illustration, not limitation, since the scope of the invention is defined by the appended claims. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art.
Example one
Fig. 1 is a schematic diagram of a semiconductor light emitting element according to an embodiment. The semiconductor light emitting element of the present embodiment includes: the light emitting diode comprises a supporting substrate 101, wherein one side of the supporting substrate 101 comprises a metal layer, a dielectric layer 104 and a semiconductor light emitting sequence which are sequentially stacked from bottom to top, the semiconductor light emitting sequence comprises a first conductivity type semiconductor layer 105, a light emitting layer 106 and a second conductivity type semiconductor layer 107 from bottom to top, and a front electrode 110 is positioned on the upper portion of the second conductivity type semiconductor layer 107 and is electrically connected with the second conductivity type semiconductor layer 107.
The supporting substrate 101 may be a conductive, non-conductive, transparent or heat-dissipating substrate, the conductive substrate is silicon, silicon carbide or a metal substrate, and the metal substrate is preferably a copper, tungsten or molybdenum substrate; the non-conductive substrate may be an aluminum nitride, sapphire substrate, or the like; the heat dissipating substrate is a ceramic substrate having a high heat dissipating efficiency, such as aluminum nitride. The support substrate 101 may have a thickness of about 50 μm to about 300 μm.
The metal layer may be a single layer or at least two layers according to the functional division, more preferably at least two functional layers, wherein at least one layer may be defined as a metal bonding layer 102 according to the function; the metal bonding layer 102 is a bonding metal material used when the semiconductor light emitting sequence side is adhered to the supporting substrate 101, such as metal of gold, tin, titanium, nickel, platinum, etc., and the bonding metal layer itself may be a multi-layer material combination. The metal layer may further include a reflective layer 103 on the upper side of the metal bonding layer 102 and closer to the semiconductor light emitting sequence, and the reflective layer 103 may be formed of a metal or an alloy containing at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf. The reflective layer 103 is capable of reflecting light rays radiated from the semiconductor light emitting sequence toward the side of the supporting substrate 101 back to the semiconductor light emitting sequence and radiated out from the light outgoing side. A metal barrier layer (not shown in the figure) may be further included between the reflective layer 103 and the metal bonding layer 102, the metal barrier layer is used to prevent the metal of the reflective layer from diffusing to one side of the metal bonding layer to affect the bonding process, and the material of the metal barrier layer may be a barrier metal material such as titanium, platinum, chromium, and the like.
The dielectric layer 105 has openings in a plurality of regions. The openings 1051 are uniformly or non-uniformly distributed on one side of the semiconductor light emitting sequence. Such as opening 1051 in the dielectric layer 105 circled in fig. 1. The dielectric layer 105 is formed of an insulating material having a conductivity smaller than that of the reflective layer 103 or the ohmic contact layer 104, a material having a low conductivity, or a material schottky-contacting the first conductive type semiconductor layer. For example, the dielectric layer 105 may be composed of at least one of fluoride, nitride, or oxide, such as ZnO, SiO2、SiOx、SiOxNy、Si3N4、Al2O3TiOx, MgF, or GaF, etc. The dielectric layer is formed by combining at least one layer or a plurality of layers of dielectric materials with different refractive indexes, the dielectric layer is more preferably a light-transmitting dielectric layer, and at least 50% of light can pass through the dielectric layer. More preferably, the refractive index of the dielectric layer is lower than that of the semiconductor light emitting sequence.
The ohmic contact layer 104 may be included between the metal reflective layer 103 and the dielectric layer 105, and the ohmic contact layer 104 forms a plurality of regions to make ohmic contact with the first conductive type semiconductor layer 106 by filling at least a plurality of openings of the dielectric layer 105 to uniformly transfer power from the metal layer (including the metal reflective layer 103 and the bonding layer 102) to the semiconductor light emitting sequence, so that the ohmic contact layer 104 does not contact the first conductive type semiconductor layer 106 side in a full surface form. The ohmic contact layer 104 may be formed of a transparent conductive layer such as at least one of ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, and ATO. The ohmic contact layer 104 may alternatively use a light transmitting conductive layer and a metal. The metal is preferably an alloy material, such as gold zinc, gold germanium nickel, or gold beryllium, and the ohmic contact layer 104 may have a single-layer or multi-layer structure.
The semiconductor light-emitting sequence is mainly made of a III-V compound material and comprises a first conductivity type semiconductor layer 106, a light-emitting layer 107 and a second conductivity type semiconductor layer 108; where the first type and the second type mean different conductivity types, the different conductivity types may be realized by n-type doping or P-type doping, respectively, to realize a material layer providing at least electrons or holes, respectively, the n-type semiconductor layer may be doped with an n-type dopant such as Si, Ge, or Sn. The P-type semiconductor layer may be doped with a P-type dopant such as Mg, Zn, Ca, Sr, or Ba. The first conductive type semiconductor layer 106, the light emitting layer 107, and the second conductive type semiconductor layer 108 may be made of materials such as aluminum gallium indium nitride, gallium nitride, aluminum indium phosphide, aluminum gallium indium phosphide, gallium arsenide, or aluminum gallium arsenide; the first conductive type semiconductor layer 106 or the second conductive type semiconductor layer 108 includes a capping layer for supplying electrons or holes therein, and may include other layer materials such as a current spreading layer, a window layer, an ohmic contact layer, etc., which are differently arranged in multiple layers according to a doping concentration or a composition content. The light emitting layer is a region for providing light radiation by recombination of electrons and holes, different materials are selected according to different light emitting wavelengths, and the light emitting layer 107 can be a periodic structure of a single quantum well or a multiple quantum well. The light emitting layer can provide conventional radiation such as ultraviolet, blue light, green, yellow, red, infrared light and the like, specifically can be radiation wave bands of 200-950 nm, such as common nitrides, such as gallium nitride base, can be doped with elements such as aluminum, indium and the like, and mainly provides radiation of 200-550 nm wave bands; or a common AlGaInP-based or AlGaAs-based light-emitting layer, providing radiation in the wavelength band of 550-950 nm.
The front electrode 109 is arranged on the light exit side of the semiconductor light emission sequence. The front electrode 109 mainly includes a pad portion where wire bonding is performed, and the pad portion is mainly used for external wire bonding in front electrode packaging. The bonding pad of the front electrode can be designed into different shapes according to the actual routing requirement, such as a cylinder or a square or other polygons. As a more preferable embodiment, as shown in fig. 2, the front electrode may further include an extension 1091 extending from the pad, the extension 1091 may be formed in a predetermined pattern shape, and the extension may have various shapes, specifically, a stripe shape.
The portion of the dielectric layer 105 directly below the front-side electrode pad has no opening, i.e., the ohmic contact layer 104 does not form an ohmic contact directly below the front-side electrode pad. The dielectric layer 105 has a metal block 110 between a portion directly under the front electrode pad and the semiconductor light emitting sequence. The metal block is contacted with the semiconductor light emitting sequence on one side and the dielectric layer on the other side and the side wall in the thickness direction is surrounded by the dielectric layer 105 to ensure that no current passes on the side of the metal block.
Based on the metal block 110 is formed below the pad part, when the pad part of the front electrode is wire-bonded, the functions of supporting and dispersing can be formed, the dielectric layer below the metal block can be effectively prevented from falling off under the action of the wire-bonding force, the generation of pits is avoided, and the reliability of the product is improved. The metal block has a Mohs hardness of at least 6 for supporting. More preferably 7 or more, and still more preferably, the metal block 110 is made of at least one material selected from titanium, chromium, vanadium, and manganese, or an alloy thereof. The higher the hardness is, the stronger the supporting effect is, and the electrical insulation layer below the front electrode pad part can be effectively prevented from falling off during external routing. The metal block is a single block.
More preferably, the thickness of the metal block 110 is 20-80 nm, and if the thickness exceeds the thickness, a chip structure has a larger height difference, a fault occurs during bonding, and if the thickness is less than the thickness, the improvement effect of the bonding wire is not obvious. The area of the metal block 110 is at least 1/2 of the pad area and at most equal to the pad area. Higher coverage area will result in light absorption effect and lower light extraction efficiency.
More preferably, the metal block 110 under the front electrode does not diffuse into the semiconductor light emitting sequence. The diffusion is that in the process of manufacturing a chip, the diffusion between the metal block 110 and the semiconductor light-emitting sequence cannot be caused by the high-temperature process of manufacturing a metal electrode or bonding metal or evaporating a metal reflecting layer and the like, and finally, the metal of the metal block cannot be diffused into the semiconductor light-emitting sequence.
More preferably, the shape of the metal block 110 is the same as that of the front electrode pad, and may be a cylinder or a square column, and the thickness of the metal block 110 is uniform, or according to the distribution of the external routing force, the metal block 110 may be formed with a thick middle portion and a thin edge portion.
The semiconductor light emitting element further comprises a counter electrode 100, wherein the counter electrode 100 is formed on the back side of the supporting substrate 101 in a full-surface manner in the present embodiment, the supporting substrate is a conductive supporting substrate, and the front electrode 109 and the counter electrode 100 are formed on both sides of the supporting substrate, so that current vertically flows through the semiconductor light emitting sequence and uniform current density is provided.
The front electrode 109 and the counter electrode 100 are preferably made of a metallic material. The front electrode, at least the pad portion and the extension portion, may further include a metal material enabling a good ohmic contact with the semiconductor light emitting sequence.
A roughness pattern for improving light extraction efficiency may be disposed on the top surface of the second-type conductivity semiconductor layer 108.
A passivation layer (not shown in the figures) may be disposed on at least one side surface of the semiconductor light emitting sequence. Also, the passivation layer may be disposed on the top surface of the second type conductivity semiconductor layer, but is not limited thereto. The passivation layer may be configured to electrically protect the semiconductor light emitting sequence.
Hereinafter, a method of manufacturing the light emitting device will be described in detail. The repeated explanation from the foregoing embodiment will be omitted.
Fig. 3 to 8 are views illustrating a manufacturing process of a light emitting device according to an embodiment.
As shown in fig. 3, a semiconductor light emitting sequence is prepared. A semiconductor light emitting sequence is formed on a growth substrate 201. The growth substrate 101 may be made of sapphire (Al)2O3) SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge and Ga2O3But is not limited thereto. The semiconductor light emitting sequence includes the second conductive type semiconductor layer 108, the light emitting layer 107 and the first conductive type semiconductor layer 106. In order to ensure epitaxial growth quality, a buffer layer is formed on the growth substrate, or in order to remove the growth substrate later, an etching stop layer and the like can be formed on the growth substrate.
As shown in fig. 3, a metal block 110 is fabricated. A photoresist pattern is formed to expose a designated region of one side of the first conductive type semiconductor layer of the semiconductor light emitting sequence, and the metal block 110 is formed through an electroplating or evaporation process. The photoresist pattern is removed. This example is a chrome block with a thickness of 40 nm.
As shown in fig. 4 to 5, a dielectric layer 105, an ohmic contact layer 104, and a reflective layer 103 are formed. The dielectric layer, the ohmic contact layer, and the reflective layer may be formed using one of evaporation, an electron beam deposition process, a sputtering process, and a plasma enhanced chemical vapor deposition process.
As shown in fig. 6, a conductive support substrate 101 is prepared. The conductive support substrate 101 is adhered to the surface of the semiconductor light emitting sequence of the structure shown in fig. 5 using the metal bonding layer 102 as a medium. Although the conductive support substrate is coupled through the bonding layer using a bonding process in the current embodiment, the conductive support substrate may be formed using a plating or deposition process.
The growth substrate 201 is removed. Fig. 7 shows a structure in which the structure of fig. 6 is turned upside down and the growth substrate is removed, and the growth substrate can be removed by different methods such as grinding, wet etching or laser lift-off according to different materials.
And forming a front electrode on the light-emitting side of the semiconductor light-emitting sequence, and forming a rough pattern on the light-emitting side of the semiconductor light-emitting sequence through a wet etching process or a dry etching process. The back electrode 100 is formed on the back surface side of the supporting substrate 101.
A plurality of light emitting devices can be manufactured by separating the structure into unit chip regions through a chip separation process and forming a passivation layer at least on a sidewall and a light emitting side of the semiconductor light emitting sequence.
Example two
As shown in fig. 9, other metal layers 111 may be included between the metal block 110 and the semiconductor light emitting sequence, and particularly, the other metal layers 111 may be made of a metal with high reflectivity, such as aluminum, silver, or an aluminum alloy or a silver alloy; the shape may be a block, dot or cluster, and the thickness is 5 to 80nm, more preferably 5 to 50nm, or 5 to 20 nm. The high-reflectivity metal forms a reflecting surface, so that the absorptivity of the high-hardness metal block can be effectively reduced, and the material of the high-reflectivity metal is different from that of the metal block. The coverage of the other metal layers 111 does not exceed the coverage of the metal blocks. The further metal layer 111 is insulated and isolated by a dielectric layer, and no current flows through the further metal layer 111.
EXAMPLE III
As shown in fig. 10, different from the first embodiment, the supporting substrate 101 is an insulating supporting substrate, such as aluminum nitride or sapphire, and the opposite electrode 100 and the front electrode 109 are located on the same side of the substrate for horizontal wire bonding. The opposite electrode 100 is formed on the bonding metal layer 102, specifically, a portion of the bonding metal layer 102 is exposed at a side facing the light emitting side in the horizontal direction for forming the opposite electrode 100, and the exposed bonding metal layer 102 may include a metal material with high conductivity, such as gold, aluminum, chromium, or nickel, in order to connect the power of the first conductive type semiconductor layer 106 to the opposite electrode 100 and form a good ohmic contact.
Example four
As shown in fig. 11, different from the first embodiment, the semiconductor light emitting sequences have at least two and are located on the same side of the same supporting substrate 101, the semiconductor light emitting sequences are separated by a trench between sidewalls of each other, the sidewall and the bottom of the trench may have an insulating layer, specifically, the bottom of the trench may be a dielectric layer 105, and the bottom of the semiconductor light emitting sequences is connected to the supporting substrate 101 through a common reflective layer 103 and a common bonding layer 102, thereby forming vertical light emitting semiconductor devices electrically connected in parallel.
EXAMPLE five
This embodiment provides a package structure including the semiconductor light emitting devices according to the first to fourth embodiments of the present invention, and a longitudinal cross-sectional view thereof is shown in fig. 12. The semiconductor light emitting element package structure according to the embodiment includes: a package body 10, first and second electrode layers 20 and 30, the first and second electrode layers 20 and 30 being disposed on the package body 10; a semiconductor light emitting element 40, the semiconductor light emitting element 40 being disposed on the package body 30 and electrically connected to the first and second electrode layers 20 and 30; and an encapsulation resin 60, the encapsulation resin 60 surrounding and covering the semiconductor light emitting element 40, the first and second electrode layers 20 and 30.
The package body 10 may be selectively formed of at least one or a combination of a silicon material, a synthetic resin material, or a metal material. The package body 10 may have a cavity having a bottom with a first electrode layer, a second electrode layer, and a bottom for mounting a semiconductor light emitting element, the cavity having inclined side surfaces.
The first and second electrode layers 20 and 30 are electrically separated from each other and supply power to the semiconductor light emitting element. Also, the first and second electrode layers 20 and 30 may reflect light generated in the semiconductor light emitting element to improve light efficiency. In addition, the first and second electrode layers 20 and 30 may release heat generated at the semiconductor light emitting element 40 to the outside.
The substrate, the electrode included in the semiconductor light emitting element 40 may be disposed on the package body 10 or the first or second electrode layers 20 and 30. Fig. 11 shows mounting of the semiconductor light emitting element described in fig. 1.
The semiconductor light emitting element may be electrically connected to the first and second electrode layers 20 and 30 using one of a wiring method, a flip chip method, and a die bonding method. In the current embodiment, the semiconductor light emitting element 40 is electrically connected to the first electrode layer 20 through an external wire bonding formation wiring 50. Also, the semiconductor light emitting element 40 directly contacts the second electrode layer 30 and is electrically connected to the second electrode layer 30.
The encapsulation resin 60 may surround the semiconductor light emitting element 40 to protect the semiconductor light emitting element 40. Also, a phosphor may be included in the encapsulation resin 60 to change the wavelength of light emitted from the light emitting device 100.
A plurality of semiconductor light emitting element package structures according to the embodiment may be arranged on a substrate, and optical members such as a light guide plate, a prism sheet, a diffusion sheet, and a fluorescent sheet may be disposed on a path of light emitted from the light emitting device package. The light emitting device package, the substrate, and the optical member may be used as a backlight unit or a lighting unit. For example, the lighting system may include a backlight unit, a lighting unit, an indicator unit, a lamp, a street lamp, and the like.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (16)
1. A semiconductor light-emitting element comprises a semiconductor light-emitting sequence, wherein the semiconductor light-emitting sequence comprises a first conductivity type semiconductor layer, a second conductivity type semiconductor layer and a light-emitting layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer from bottom to top;
a dielectric layer is arranged below the first conductive type semiconductor layer, and the dielectric layer is provided with a plurality of through openings;
a metal layer is arranged below the dielectric layer and is electrically connected with the first conductive type semiconductor layer through a plurality of through openings of the dielectric layer;
the front electrode is provided with a bonding pad, is positioned on the upper part of the second type conductivity semiconductor layer and is electrically connected with the second type conductivity semiconductor layer;
an opposite electrode electrically connected to the metal layer;
the method is characterized in that: and a metal block located between the dielectric layer and the semiconductor light emitting sequence under the front electrode pad, wherein the Mohs hardness of the metal block is greater than or equal to 6, the plurality of through openings are not overlapped with the metal block in the thickness direction, one side of the metal block is contacted with the semiconductor light emitting sequence, and the other side of the metal block is contacted with the dielectric layer.
2. A semiconductor light emitting element according to claim 1, wherein: the front electrode comprises a bonding pad and an extension part, the extension part is strip-shaped, and the metal block is only positioned below the bonding pad.
3. A semiconductor light emitting element according to claim 1, wherein: the area of the metal block under the front electrode pad is at least 1/2 of the area of the pad.
4. A semiconductor light emitting element according to claim 1, wherein: the area of the metal block below the front electrode bonding pad is at most equal to the area of the bonding pad.
5. A semiconductor light emitting element according to claim 1, wherein: the metal block below the front electrode bonding pad is not diffused with the semiconductor light-emitting sequence.
6. A semiconductor light emitting element according to claim 1, wherein: the thickness of the metal block is 20nm-80 nm.
7. A semiconductor light emitting element according to claim 1, wherein: the dielectric layer is at least one layer and is made of at least one material of nitride, oxide or fluoride.
8. A semiconductor light emitting element according to claim 1, wherein: the metal layer is at least two layers and comprises a metal reflecting layer and a metal bonding layer.
9. A semiconductor light emitting element according to claim 1, wherein: the semiconductor light-emitting sequence comprises nitride or aluminum gallium indium phosphide or aluminum gallium arsenic compound.
10. A semiconductor light emitting element according to claim 1, wherein: the metal layer is provided with a substrate below, the substrate is a conductive substrate, and the substrate is positioned between the opposite electrode and the metal layer.
11. A semiconductor light emitting element according to claim 1, wherein: the metal layer is provided with a substrate below, the substrate is an insulating substrate, and the opposite electrode and the front electrode are positioned on the same side of the substrate.
12. A semiconductor light emitting element according to claim 1, wherein: the metal block is titanium, chromium, vanadium, manganese or an alloy comprising at least one of the metals.
13. A semiconductor light emitting element according to claim 1, wherein: the side surface of the metal block is covered by a dielectric layer.
14. A semiconductor light emitting element according to claim 1, wherein: the semiconductor light-emitting sequences are at least two, and the at least two semiconductor light-emitting sequences are supported by the same supporting substrate on the same side.
15. A semiconductor light emitting element according to claim 1, wherein: the metal layer forms ohmic contact with the first conductive type semiconductor layer through the ohmic contact layer.
16. A semiconductor light emitting element according to claim 15, wherein: the ohmic contact layer is made of transparent conductive material or metal alloy.
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| CN201910209946.1A CN109873065B (en) | 2019-03-19 | 2019-03-19 | Semiconductor light-emitting element |
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| CN201910209946.1A CN109873065B (en) | 2019-03-19 | 2019-03-19 | Semiconductor light-emitting element |
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| CN109873065B true CN109873065B (en) | 2020-06-23 |
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