CN101286542A - LED apparatus - Google Patents
LED apparatus Download PDFInfo
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- CN101286542A CN101286542A CNA2007100917468A CN200710091746A CN101286542A CN 101286542 A CN101286542 A CN 101286542A CN A2007100917468 A CNA2007100917468 A CN A2007100917468A CN 200710091746 A CN200710091746 A CN 200710091746A CN 101286542 A CN101286542 A CN 101286542A
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- emitting diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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Abstract
The invention discloses a light emitting diode (LED) device which includes a heat-dissipating baseplate, a sandwich structure, an epitaxial lamination, a first contact electrode and a second contact electrode, wherein, the sandwich structure includes a reflecting layer, a patterning insulated heat conducting layer and a transparent conducting layer, and the patterning insulated heat conducting layer is arranged between the reflecting layer and the transparent conducting layer. The sandwich structure is positioned between the heat-dissipating baseplate and the epitaxial lamination so as to lead current to be centralized to flow to the reflecting layer or the transparent conducing layer and then be diffused evenly by the transparent conducting layer. The epitaxial lamination includes a first semiconductor layer, a luminous layer and a second semiconductor layer, wherein, the first contact electrode is electrically connected with the first semiconductor layer, while the second contact electrode is electrically connected with the second semiconductor layer.
Description
Technical field
The present invention relates to a kind of electro photo-luminescent apparatus, particularly a kind of light-emitting diode assembly.
Background technology
(Light Emitting Diode LED) is a kind of cold light light-emitting component to light-emitting diode, and it utilizes the energy that the electron hole combination is discharged in the semi-conducting material, disengages with the form of light.According to the difference of materials used, it can send the monochromatic light of different wave length.Mainly can divide into two kinds of visible light emitting diode and invisible light (infrared ray) light-emitting diodes, because light-emitting diode is compared to the luminous form of conventional bulb, have advantages such as power saving, shatter-proof and flash speed are fast, therefore become critical elements indispensable in the daily life.
Please refer to Fig. 1, a kind of known luminescence diode element 10 comprises epitaxial substrate 100, first semiconductor layer 101, luminescent layer 102 and second semiconductor layer 103.Wherein, first semiconductor layer 101, luminescent layer 102 and second semiconductor layer 103 are grown up in regular turn on epitaxial substrate 100, and form first contact electrode 11 and be linked to first semiconductor layer, 101, the second contact electrodes 12 and be linked to second semiconductor layer 103.With first semiconductor layer 101 is the n type semiconductor layer, second semiconductor layer 103 is the example explanation for the p type semiconductor layer, when producing electric current when respectively these semiconductor layers 101,103 being imposed voltage, combine and luminous by the electron hole in n type semiconductor layer and the p type semiconductor layer, reached the purpose that converts electrical energy into luminous energy in luminescent layer 102.
In order to reach better heat radiating effect and light extraction efficiency, generally light-emitting diode 10 is packaged on the heat-radiating substrate in flip-chip (flip chip) mode, and form the reflector between heat-radiating substrate and light-emitting diode 10, solve the not good problem of known epitaxial substrate thermal diffusivity by heat-radiating substrate, and make to concentrate in the same direction by the light that reflective layer reflects luminescent layer 102 is sent and penetrate, known light is covered by contact electrode 11,12 and light sends towards extension substrate 100 and solve, the phenomenon of the light losing that causes.
In addition, as shown in Figure 2, the side that known a kind of upside-down mounting chip light-emitting diode assembly 2 also is disclosed in second semiconductor layer 203 is formed with a plurality of projections 204 that are provided with separately, be formed with printing opacity insulating barrier 205 in twos between the projection 204, and reflector 206 is formed on the printing opacity insulating barrier 205 and second semiconductor layer 203, by making current concentration every being provided with between the printing opacity insulating barrier 205, to improve photoelectric conversion efficiency.Yet, because the material multiselect in reflector 206 is from metal material, itself and second semiconductor layer 203 be formed to connect the phenomenon that face exists high Schottky barrier (Schotty barrier), cause resistance value too high and make electric current be difficult for evenly diffusion, promptly cause the electric current embolism in the face place of connecing, and then the operating voltage of light-emitting diode assembly 2 is risen, and with the heat energy that is brought accumulation, also cause more serious heat dissipation problem because of no path can conduct to the external world.
In view of this, how to provide the light-emitting diode assembly that a kind of electric current diffusion is even, thermal conductivity is good and photoelectric conversion efficiency is high, real is one of important topic now.
Summary of the invention
Because above-mentioned problem, purpose of the present invention is for providing the light-emitting diode assembly that a kind of electric current diffusion is even, thermal conductivity is good and photoelectric conversion efficiency is high.
Edge is for reaching above-mentioned purpose, to comprise heat-radiating substrate, sandwich structure, extension lamination, first contact electrode and second contact electrode according to a kind of light-emitting diode assembly of the present invention.Wherein, sandwich structure comprises reflector, patterning insulating heat-conductive layer and transparency conducting layer, and patterning insulating heat-conductive layer is between reflector and transparency conducting layer.Sandwich structure can make past reflector of current concentration or transparency conducting layer flow between heat-radiating substrate and extension lamination, evenly spreads by transparency conducting layer again.Extension lamination comprises first semiconductor layer, luminescent layer and second semiconductor layer, and first contact electrode and first semiconductor layer electrically connect, and second contact electrode and second semiconductor layer electrically connect.
From the above, because of between extension lamination and heat-radiating substrate, forming the sandwich structure that contains transparency conducting layer, patterning insulating heat-conductive layer and reflector according to a kind of light-emitting diode assembly of the present invention, electric current is concentrated penetrated, and via the distribution of transparency conducting layer uniform current.In addition, provide good Ohmic to contact by transparency conducting layer with the face that connects of extension lamination, and effectively avoid the phenomenon of current known embolism.And utilize the high-termal conductivity matter of patterning insulating heat-conductive layer, the path that provides heat energy to disperse is compared to the efficient of dispersing of known more effective raising light-emitting diode assembly heat energy.
Description of drawings
Fig. 1 is a kind of schematic diagram of known luminescence diode element.
Fig. 2 is a kind of schematic diagram of known upside-down mounting chip light-emitting diode assembly.
Fig. 3 to Fig. 6 is the schematic diagram according to a kind of light-emitting diode assembly of the preferred embodiment of the present invention.
Fig. 7 to Figure 10 is the schematic diagram according to the another kind of light-emitting diode assembly of the preferred embodiment of the present invention.
Description of reference numerals
10: light-emitting diode 100: epitaxial substrate
11: the first contact electrodes of 103: the second semiconductor layers
12: the second contact electrodes
2,3,4,5,6: light-emitting diode assembly
205: printing opacity insulating barrier 206: reflector
30: 301: the first semiconductor layers of extension lamination
302: luminescent layer
303,303a, 303b: second semiconductor layer
31: heat-radiating substrate
32,32a, 32b, 32c, 32d: reflector
33,33a, 33b, 33c, 33d: patterning insulating heat-conductive layer
34,34a, 34b, 34c, 34d: transparency conducting layer
35,45,55: the first contact electrodes
36,46,56: the second contact electrodes
37: barrier layer 38: adhered layer
Embodiment
Hereinafter with reference to relevant indicators, a kind of light-emitting diode assembly according to the preferred embodiment of the present invention is described.
Please refer to shown in Figure 3ly, comprise heat-radiating substrate 31, sandwich structure S, extension lamination 30, first contact electrode 35 and second contact electrode 36 according to a kind of light-emitting diode assembly 3 of the preferred embodiment of the present invention.
Heat-radiating substrate 31 is for having the permanent substrate of high heat conduction number, and according to the difference of material, heat-radiating substrate 31 can be metal material heat-radiating substrate, composite material heat-radiating substrate or insulating material heat-radiating substrate, in the present embodiment, the material of heat-radiating substrate 31 can be selected from the group that aluminium, copper, aluminum bronze oxide, silicon, GaAs, gallium phosphide, carborundum, boron nitride, aluminium nitride, pottery and combination thereof are constituted.
Sandwich structure S comprises reflector 32, patterning insulating heat-conductive layer 33 and transparency conducting layer 34, and patterning insulating heat-conductive layer 33 is between reflector 32 and transparency conducting layer 34.In the present embodiment, the material in reflector 32 is for example platinum (Pt), gold (Au), silver (Ag), palladium (Pd), aluminium (Al), titanium (Ti), iridium (Ir) or a rhodium (Rh) of metal.
Patterning insulating heat-conductive layer 33 is arranged on the reflector 32, and it has the patterned layer of a plurality of projections, and these projections are provided with separately, and patterning insulating heat-conductive layer 33 in twos between the projection every equating or unequal.Because the energy gap of aluminium nitride (AlN) is about 6.2 electron-volts (eV), so when under the UV light situation of (its wavelength is about 360nm), aluminium nitride (AlN) has light-permeable.So in the present embodiment, patterning insulating heat-conductive layer 33 is for printing opacity and have high-termal conductivity, and its material also can be selected aluminium nitride (AlN) for use except that can be carborundum (SiC).
Do explanation with shown in Figure 3, transparency conducting layer 34 is arranged on patterning insulating heat-conductive layer 33 and the reflector 32, and second semiconductor layer 303 contacts (Ohmiccontact) with the face that the connects formation ohmic properties in reflector 32, reduces contact resistance value thus.In the present embodiment, the material of transparency conducting layer 34 can be relevant transparent conductive material such as nickel (Ni), gold (Au) or indium tin oxide (ITO).
Shown in Figure 3ly do explanation, extension lamination 30 is arranged on the transparency conducting layer 34, and extension lamination 30 comprises first semiconductor layer 301, luminescent layer 302 and second semiconductor layer 303 in regular turn, and is formed in regular turn on the transparency conducting layer 34 with the order of second semiconductor layer 303, luminescent layer 302 and first semiconductor layer 301.In the present embodiment, first semiconductor layer 301 can be the n type semiconductor layer, and second semiconductor layer 303 can be the p type semiconductor layer.So this only is an illustrative, and certainly, first semiconductor layer 301 and second semiconductor layer 303 are the application of n type semiconductor layer and p type semiconductor layer, can be exchanged according to actual demand.
In addition, according to actual demand, as shown in Figure 4, also can make second contact electrode 36 be formed on the transparency conducting layer 34 that is exposed by etching second semiconductor layer 303 to expose the transparency conducting layer 34 of part.Yet, different according to the position of first contact electrode and second contact electrode setting, as shown in Figure 5, first contact electrode 45 also can be arranged at the relative two sides of heat-radiating substrate 31 with second contact electrode 46 and be vertical LED device 4.At this, first contact electrode 45 is formed on first semiconductor layer 301, and second contact electrode 46 then is formed at a side of heat-radiating substrate 31.
Again, as shown in Figure 6, it utilizes the flip-chip mode to link first contact electrode 55 and second contact electrode 56 extension lamination 30 and is upside-down mounting chip light-emitting diode assembly 5.At this, first contact electrode 55 and second contact electrode 56 are positioned on the heat-radiating substrate 31, electrically connect with first semiconductor layer 301 and second semiconductor layer 303 by weld pad P (pad) respectively again.
When utilizing first contact electrode 35,45,55 and second contact electrode 36,46,56 respectively first semiconductor layer 301 and second semiconductor layer 303 to be imposed voltage and producing electric current, patterning insulating heat-conductive layer 33 can force current concentration to flow toward transparency conducting layer 34, and reach the effect of even diffusion by transparency conducting layer 34, make the electronics and the hole of first semiconductor layer 301 and second semiconductor layer 303 combination take place, finally transfer generation light in conjunction with the energy that is discharged by the electron hole in luminescent layer 302.
In addition, patterning insulating heat-conductive layer 33 can provide the good path of thermal energy conduction to heat-radiating substrate 31 by the high-termal conductivity speciality that it had, and can effectively reduce the operating temperature of light-emitting diode assembly 3,4,5.
Moreover to shown in Figure 6, the light-emitting diode assembly 3,4,5 of present embodiment preferably also can comprise barrier layer 37 as Fig. 3, and barrier layer 37 is arranged between heat-radiating substrate 31 and the reflector 32, diffuses in the reflector 32 in order to intercept other metal ions.In the present embodiment, the material of barrier layer 37 is selected from nickel, titanium, platinum, palladium, iridium, rhodium, chromium and group that combination constituted thereof.
Again, the light-emitting diode assembly 3,4,5 of present embodiment also comprises adhered layer 38, be arranged between reflector 32 and the heat-radiating substrate 31, particularly be arranged between barrier layer 37 and the heat-radiating substrate 31, adhered layer 38 is in order to link extension lamination 30 and heat-radiating substrate 31, and its material for example is silver paste, tin cream or tin silver paste etc.Earlier adhered layer 38 is formed at a side of barrier layer 37, again adhered layer 38 and barrier layer 37 and heat-radiating substrate 31 is connected.
Please refer to Fig. 7, it is another kind of light-emitting diode assembly 6.Different with previous embodiment be in, reflector 32a has convex-concave surface, patterning insulating heat-conductive layer 33a then riddles on the depression or sidewall of reflector 32a, transparency conducting layer 34a is coated on patterning insulating heat-conductive layer 33a and the reflector 32a, to reach the electric current purpose good and that opto-electronic conversion is high that evenly spreads, dispels the heat equally.
Also can be full of on the convex-concave surface in reflector, and transparency conducting layer is coated on patterning insulating heat-conductive layer and the reflector by patterning insulating heat-conductive layer and transparency conducting layer again.Shown in Fig. 8-1, patterning insulating heat-conductive layer 33b is positioned at the recess of the convex-concave surface of reflector 32b, and transparency conducting layer 34b is coated on patterning insulating heat-conductive layer 33b and the reflector 32b.Perhaps, shown in Fig. 8-2, patterning insulating heat-conductive layer 33b is positioned at the protruding place of the convex-concave surface of reflector 32b, and transparency conducting layer 34b is coated on patterning insulating heat-conductive layer 33b and the reflector 32b.
In addition, also can be full of on the convex-concave surface in reflector by patterning insulating heat-conductive layer, transparency conducting layer and second semiconductor layer, as shown in Figure 9, in the protruding place of the convex-concave surface of reflector 32c, also can be full of by patterning insulating heat-conductive layer 33c, transparency conducting layer 34c and the second semiconductor layer 303a, wherein transparency conducting layer 34c is coated on patterning insulating heat-conductive layer 33c and the reflector 32c.At this, can utilize the etching second semiconductor layer 303a and reach.Yet, be not limited only to this, also can be further by the etching luminescent layer and first semiconductor layer, and the reflector is riddled on the convex-concave surface of patterning insulating heat-conductive layer, transparency conducting layer, second semiconductor layer, luminescent layer and first semiconductor layer.
Moreover, as shown in figure 10, patterning insulating heat-conductive layer 33d also can be arranged on the recess of convex-concave surface of reflector 32d, is coated on patterning insulating heat-conductive layer 33d and the reflector 32d by transparency conducting layer 34d again, at this, it also can be reached by the second semiconductor layer 303b of etching part.
Hold, above-mentioned have reflector, patterning insulating heat-conductive layer and the formed sandwich structure of transparency conducting layer and also can be applied to positive formula light-emitting diode assembly, vertical LED device or upside-down mounting chip light-emitting diode assembly respectively.
In sum, because of between extension lamination and heat-radiating substrate, forming the sandwich structure that contains transparency conducting layer, patterning insulating heat-conductive layer and reflector according to a kind of light-emitting diode assembly of the present invention, electric current is concentrated penetrated, and via the distribution of transparency conducting layer uniform current.In addition, provide good Ohmic to contact by transparency conducting layer with the face that connects of extension lamination, and effectively avoid the phenomenon of current known embolism.And utilize the high-termal conductivity matter of patterning insulating heat-conductive layer, the path that provides heat energy to disperse is compared to the efficient of dispersing of known more effective raising light-emitting diode assembly heat energy.
The above only is an illustrative, but not is restricted person.Anyly do not break away from spirit of the present invention and category, and, all should be contained in the scope of claim its equivalent modifications of carrying out or change.
Claims (18)
1, a kind of light-emitting diode assembly comprises:
Heat-radiating substrate;
Sandwich structure comprises reflector, patterning insulating heat-conductive layer and transparency conducting layer, and this patterning insulating heat-conductive layer is between this reflector and this transparency conducting layer;
Extension lamination comprises first semiconductor layer, luminescent layer and second semiconductor layer;
First contact electrode electrically connects with this first semiconductor layer; And
Second contact electrode electrically connects with this second semiconductor layer;
Wherein this sandwich structure can make past this reflector of current concentration or this transparency conducting layer flow between this heat-radiating substrate and this extension lamination, evenly spreads by this transparency conducting layer again.
2, light-emitting diode assembly as claimed in claim 1, wherein this reflector has convex-concave surface.
3, light-emitting diode assembly as claimed in claim 2, wherein this patterning insulating heat-conductive layer is arranged on this protuberance in this reflector.
4, light-emitting diode assembly as claimed in claim 2, wherein this patterning insulating heat-conductive layer riddles on the depression or sidewall in this reflector.
5, light-emitting diode assembly as claimed in claim 2, wherein this patterning insulating heat-conductive layer and this transparency conducting layer riddle on the convex-concave surface in this reflector.
6, light-emitting diode assembly as claimed in claim 2, wherein this patterning insulating heat-conductive layer, this transparency conducting layer and this second semiconductor layer riddle the depression in this reflector.
7, light-emitting diode assembly as claimed in claim 2, wherein this patterning insulating heat-conductive layer, this transparency conducting layer, this second semiconductor layer, this luminescent layer and this first semiconductor layer riddle on the convex-concave surface in this reflector.
8, light-emitting diode assembly as claimed in claim 1, wherein this patterning insulating heat-conductive layer has a plurality of projections, and these projections are provided with separately.
9, light-emitting diode assembly as claimed in claim 1, wherein the material of this patterning insulating heat-conductive layer is aluminium nitride or carborundum.
10, light-emitting diode assembly as claimed in claim 1, wherein the material in this reflector is selected from platinum, gold, silver, palladium, aluminium, titanium, iridium, rhodium and group that combination constituted thereof.
11, light-emitting diode assembly as claimed in claim 1, wherein the material of this transparency conducting layer is selected from nickel, gold, indium tin oxide and group that combination constituted thereof.
12, light-emitting diode assembly as claimed in claim 1, wherein this heat-radiating substrate is metal material heat-radiating substrate, composite material heat-radiating substrate or insulating material heat-radiating substrate, perhaps, the material of this heat-radiating substrate is selected from the group that aluminium, copper, aluminum bronze oxide, silicon, GaAs, gallium phosphide, carborundum, boron nitride, aluminium nitride, pottery and combination thereof are constituted.
13, light-emitting diode assembly as claimed in claim 1 also comprises barrier layer, be arranged between this heat-radiating substrate and this sandwich structure, and the material of this barrier layer is selected from nickel, titanium, platinum, palladium, iridium, rhodium, chromium and group that combination constituted thereof.
14, light-emitting diode assembly as claimed in claim 1 also comprises adhered layer, is arranged between this heat-radiating substrate and this sandwich structure.
15, light-emitting diode assembly as claimed in claim 14, wherein the material of this adhered layer is silver paste, tin cream or tin silver paste.
16, light-emitting diode assembly as claimed in claim 14, wherein the material of this adhered layer comprises leaded and lead-free adhesive material.
17, light-emitting diode assembly as claimed in claim 1 is applied to the vertical LED device, and wherein this first contact electrode and this second contact electrode are arranged at the relative two sides of this heat-radiating substrate.
18, light-emitting diode assembly as claimed in claim 1 is applied to positive formula light-emitting diode assembly or upside-down mounting chip light-emitting diode assembly, and wherein this first contact electrode and this second contact electrode are arranged at the side of this heat-radiating substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100917468A CN101286542A (en) | 2007-04-09 | 2007-04-09 | LED apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100917468A CN101286542A (en) | 2007-04-09 | 2007-04-09 | LED apparatus |
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| Publication Number | Publication Date |
|---|---|
| CN101286542A true CN101286542A (en) | 2008-10-15 |
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|---|---|---|---|
| CNA2007100917468A Pending CN101286542A (en) | 2007-04-09 | 2007-04-09 | LED apparatus |
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| CN (1) | CN101286542A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102024893A (en) * | 2010-05-29 | 2011-04-20 | 比亚迪股份有限公司 | Substrate and preparation method thereof, and LED chip with vertical structure and preparation method thereof |
| CN102237473A (en) * | 2010-05-07 | 2011-11-09 | 展晶科技(深圳)有限公司 | Light emitting diode and manufacturing method thereof |
| WO2011147290A1 (en) * | 2010-05-28 | 2011-12-01 | 方方 | Light emitting diode with thermoradiation heat-dissipation layers |
| CN102299235A (en) * | 2011-06-13 | 2011-12-28 | 协鑫光电科技（张家港）有限公司 | LED (light-emitting diode) with high luminous efficiency |
| CN102760802A (en) * | 2011-04-29 | 2012-10-31 | 清华大学 | Led |
| CN105633068A (en) * | 2015-12-31 | 2016-06-01 | 深圳市瑞丰光电子股份有限公司 | Dual-purpose LED device for communication and illumination |
| CN108780828A (en) * | 2016-01-05 | 2018-11-09 | Lg伊诺特有限公司 | Semiconductor devices |
| CN109873065A (en) * | 2019-03-19 | 2019-06-11 | 泉州三安半导体科技有限公司 | A kind of semiconductor light-emitting elements |
| CN110896088A (en) * | 2018-09-13 | 2020-03-20 | 上海微电子装备（集团）股份有限公司 | Display panel, display device and display panel manufacturing method |
-
2007
- 2007-04-09 CN CNA2007100917468A patent/CN101286542A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102237473A (en) * | 2010-05-07 | 2011-11-09 | 展晶科技(深圳)有限公司 | Light emitting diode and manufacturing method thereof |
| WO2011147290A1 (en) * | 2010-05-28 | 2011-12-01 | 方方 | Light emitting diode with thermoradiation heat-dissipation layers |
| CN102024893A (en) * | 2010-05-29 | 2011-04-20 | 比亚迪股份有限公司 | Substrate and preparation method thereof, and LED chip with vertical structure and preparation method thereof |
| CN102024893B (en) * | 2010-05-29 | 2012-03-07 | 比亚迪股份有限公司 | Substrate, and LED chip with vertical structure and preparation method thereof |
| US9231157B2 (en) | 2011-04-29 | 2016-01-05 | Tsinghua University | Light emitting diode |
| CN102760802A (en) * | 2011-04-29 | 2012-10-31 | 清华大学 | Led |
| CN102760802B (en) * | 2011-04-29 | 2015-03-11 | 清华大学 | Led |
| CN102299235A (en) * | 2011-06-13 | 2011-12-28 | 协鑫光电科技（张家港）有限公司 | LED (light-emitting diode) with high luminous efficiency |
| CN105633068A (en) * | 2015-12-31 | 2016-06-01 | 深圳市瑞丰光电子股份有限公司 | Dual-purpose LED device for communication and illumination |
| CN105633068B (en) * | 2015-12-31 | 2018-11-02 | 深圳市瑞丰光电子股份有限公司 | It is logical to shine dual-purpose LED component |
| CN108780828A (en) * | 2016-01-05 | 2018-11-09 | Lg伊诺特有限公司 | Semiconductor devices |
| CN108780828B (en) * | 2016-01-05 | 2022-02-11 | 苏州乐琻半导体有限公司 | Semiconductor device with a plurality of transistors |
| US11355672B2 (en) | 2016-01-05 | 2022-06-07 | Suzhou Lekin Semiconductor Co., Ltd. | Semiconductor device |
| CN110896088A (en) * | 2018-09-13 | 2020-03-20 | 上海微电子装备（集团）股份有限公司 | Display panel, display device and display panel manufacturing method |
| CN109873065A (en) * | 2019-03-19 | 2019-06-11 | 泉州三安半导体科技有限公司 | A kind of semiconductor light-emitting elements |
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Open date: 20081015 |