KR102425318B1 - Light emitting device and light emitting device including the same - Google Patents

Abstract

In the embodiment, a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a second conductive layer disposed under the second conductivity-type semiconductor layer, and an insulating layer interposed therebetween A first conductive layer disposed under the conductive layer, through electrodes formed from the first conductive layer through the second conductive layer, the second conductive type semiconductor layer, and the active layer, and formed up to a part of the first conductive type semiconductor layer and a reflective metal disposed between the insulating layer and the active layer and a step portion providing a space for accommodating a portion of the reflective metal.

Description

A light emitting device and a light emitting device package including the same

The embodiment relates to a light emitting device.

Group 3-5 compound semiconductors, such as GaN and AlGaN, are widely used in optoelectronics and electronic devices due to their many advantages, such as wide and easily tunable band gap energy.

In particular, light emitting devices such as light emitting diodes or laser diodes using group 3-5 or group 2-6 compound semiconductor materials of semiconductors have developed thin film growth technology and device materials such as red, green, blue, and ultraviolet light. Various colors can be realized, and efficient white light can be realized by using fluorescent materials or combining colors. It has the advantage of being friendly.

Accordingly, a light emitting diode backlight that replaces a Cold Cathode Fluorescence Lamp (CCFL) constituting a transmission module of an optical communication means, a backlight of a Liquid Crystal Display (LCD) display device, and white light emission that can replace a fluorescent lamp or incandescent light bulb Applications are expanding to diode lighting devices, automobile headlights and traffic lights.

In the light emitting device, a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer is formed, and a first electrode and a second electrode are formed on the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively. this is placed The light emitting device emits light having an energy determined by an energy band unique to a material constituting the active layer when electrons injected through the first conductivity type semiconductor layer and holes injected through the second conductivity type semiconductor layer meet each other. The light emitted from the active layer may vary depending on the composition of the material constituting the active layer, and may be blue light, ultraviolet (UV) light, or deep ultraviolet (Deep UV) light.

1 is a view showing a conventional light emitting device.

The vertical light emitting device shown in FIG. 1 includes a light emitting structure 120 including a first conductivity type semiconductor layer 122 , an active layer 124 and a second conductivity type semiconductor layer 126 on a second electrode 136 . is disposed, and a first electrode 132 is disposed on the first conductivity type semiconductor layer 122 .

The first conductivity-type semiconductor layer 122 may be provided as an n-type semiconductor layer, and the second conductivity-type semiconductor layer 126 may be provided as a p-type semiconductor layer.

If light of an ultraviolet wavelength band is emitted from the active layer 124 and each of the first conductivity type semiconductor layer 122 and the second conductivity type semiconductor layer 126 is formed of GaN, the light is emitted from the first conductivity type semiconductor layer ( 122) and the second conductivity type semiconductor layer 126, there is a problem in that light extraction efficiency is deteriorated.

In addition, in order to solve this problem, a reflective metal (not shown) may be introduced into the lower portion of the active layer 124 , and the introduced reflective metal penetrates to the mesa region of the active layer 124 and the reliability of the light emitting device is lowered. There was a problem.

In addition, the length of penetration of the reflective metal introduced into the lower portion of the active layer 124 is increased due to moisture and heat generated as the light emitting device emits light, so that the introduced reflective metal penetrates to the mesa region of the active layer 124, so that the reliability of the light emitting device There was a problem with this degradation.

Conversely, when the position of the reflective metal introduced under the active layer is spaced apart from the mesa region by a predetermined distance or more to solve the above-mentioned problem, the area of the reflective surface formed by the reflective metal is reduced, thereby reducing the light extraction efficiency. there was

The light emitting device of the embodiment prevents light emitted from the active layer from being absorbed by the first conductivity type semiconductor layer and the second conductivity type semiconductor layer to provide a light emitting device in which light extraction efficiency is not deteriorated. .

In addition, an object of the present invention is to provide a light emitting device that prevents a problem that the introduced reflective metal penetrates to the mesa region of the active layer and deteriorates the reliability of the light emitting device.

In addition, the length of penetration of the reflective metal introduced into the lower portion of the active layer 124 is increased due to moisture and heat generated as the light emitting device emits light, so that the introduced reflective metal penetrates to the mesa region of the active layer 124, so that the reliability of the light emitting device It is an object to be solved to provide a light emitting device that prevents this degradation problem.

Providing a light emitting device that prevents the problem of reducing light extraction efficiency by reducing the area of the reflective surface formed by the reflective metal when the position of the reflective metal introduced under the active layer is spaced apart from the mesa region by a predetermined distance or more Make it the problem you want to solve.

In order to solve the above-described problem, the light emitting device of the embodiment includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, and a second conductive layer disposed under the second conductivity type semiconductor layer , a first conductive layer disposed under the second conductive layer with an insulating layer interposed therebetween, passing through the second conductive layer, the second conductive type semiconductor layer, and the active layer from the first conductive layer, and the first conductive layer A means for solving the problem to provide a light emitting device including through electrodes formed up to a part of a semiconductor layer, a reflective metal disposed between the insulating layer and the active layer, and a step portion providing a space for accommodating a portion of the reflective metal. do it with

In addition, as a means of solving the problem, the step portion provides a light emitting device disposed on the second conductive layer.

In addition, as a means of solving the problem, the step portion provides a light emitting device formed by mesa-etching the second conductive layer.

In addition, as a means for solving the problem, the step portion provides a light emitting device including a concave portion provided concavely with respect to a bottom surface of the reflective metal and a protrusion protruding from one surface of the concave portion.

In addition, a means for solving the problem is to provide a light emitting device in which the upper surface of the concave portion has a planar shape.

In addition, as a means for solving the problem, the upper surface of the concave portion is to provide a light emitting device having a curved shape concave toward the active layer.

In addition, the lower surface of the protrusion is to provide a light emitting device having a planar shape as a means of solving the problem.

In addition, the lower surface of the protrusion is to provide a light emitting device having a convex curved surface shape toward the reflective metal as a means of solving the problem.

In addition, the height of the step portion is to provide a light emitting device less than 2um from the reflective metal as a means of solving the problem.

In addition, a conductive substrate having a groove and at least a portion of the conductive substrate is inserted into the groove of any one of claims 1 to 9, comprising the light emitting device of any one of claims 1 to 9, wherein at least a part of the side surface and the bottom surface of the light emitting device To provide a light emitting device package coupled to the conductive substrate is a solution to the problem.

The light emitting device of the embodiment prevents light emitted from the active layer from being absorbed by the first conductivity type semiconductor layer and the second conductivity type semiconductor layer to provide a light emitting device that does not deteriorate light extraction efficiency.

In addition, it is an effect of the present invention to provide a light emitting device that prevents a problem that the introduced reflective metal penetrates to the mesa region of the active layer and the reliability of the light emitting device is deteriorated.

In addition, the length of penetration of the reflective metal introduced into the lower portion of the active layer 124 is increased due to moisture and heat generated as the light emitting device emits light, so that the introduced reflective metal penetrates to the mesa region of the active layer 124, so that the reliability of the light emitting device It is an effect of the present invention to provide a light emitting device that prevents this deterioration problem.

Providing a light emitting device that prevents the problem of reducing light extraction efficiency by reducing the area of the reflective surface formed by the reflective metal when the position of the reflective metal introduced under the active layer is spaced apart from the mesa region by a predetermined distance or more to the effect of the invention.

1 is a view showing a conventional light emitting device,
2 is a view showing an embodiment of a light emitting device,
3 is a view showing another embodiment of the light emitting device,
Figure 4 is a view showing in detail another embodiment of the X portion of the light emitting structure of Figure 3,
5a and 5b are top views of the light emitting device of FIGS. 2 and 3,
6 is a view showing an embodiment of a light emitting device package.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention that can specifically realize the above objects will be described with reference to the accompanying drawings.

In the description of the embodiment according to the present invention, in the case where it is described as being formed on "on or under" of each element, on (above) or below (on) or under) includes both elements in which two elements are in direct contact with each other or one or more other elements are disposed between the two elements indirectly. In addition, when expressed as "up (up) or down (on or under)", it may include the meaning of not only the upward direction but also the downward direction based on one element.

The light emitting device according to the embodiments is a vertical light emitting device, wherein the first electrode for supplying a current to the first conductive semiconductor layer is disposed under the light emitting structure to reduce the amount of reflection of light emitted to the upper portion of the light emitting structure, The first electrode may pass through the second conductivity-type semiconductor layer and the active layer to be electrically connected to the first conductivity-type semiconductor layer.

2 is a view showing a first embodiment of a light emitting device.

In the light emitting device 200a according to the present embodiment, the second conductive layer 236 is disposed under the light emitting structure 220 , and the insulating layer 285 and the first conductive layer 232 are disposed under the second electrode. The through electrode 233 extending from the first conductive layer 232 may be in electrical contact with the second conductive semiconductor layer 222 in the light emitting structure 220 . In addition, in the edge region of the second conductive layer 236 , the second electrodes 236a and 236b may be disposed to correspond to the edge of the light emitting structure 220 .

The light emitting structure 220 includes a first conductivity type semiconductor layer 222 , an active layer 224 , and a second conductivity type semiconductor layer 226 .

The first conductivity type semiconductor layer 222 may be implemented with a group III-V or group II-VI compound semiconductor, and may be doped with a first conductivity type dopant. The first conductivity type semiconductor layer 222 has a composition formula of Al _x In _y Ga _(1-xy) N (0≤≤x≤≤1, 0≤≤y≤≤1, 0≤≤x+y≤≤1) A semiconductor material having a, AlGaN, GaN, InAlGaN, AlGaAs, GaP, GaAs, may be formed of any one or more of GaAsP, AlGaInP.

When the first conductivity-type semiconductor layer 222 is an n-type semiconductor layer, the first conductivity-type dopant may include an n-type dopant such as Si, Ge, Sn, Se, Te, or the like. The first conductivity type semiconductor layer 222 may be formed as a single layer or a multilayer, but is not limited thereto.

The active layer 224 is disposed between the first conductivity type semiconductor layer 222 and the second conductivity type semiconductor layer 226 , and has a single well structure, a multiple well structure, a single quantum well structure, and a multiple quantum well. It may include any one of a (MQW: Multi Quantum Well) structure, a quantum dot structure, or a quantum wire structure.

The active layer 224 uses a III-V group element compound semiconductor material to form a well layer and a barrier layer, for example, AlGaN/AlGaN, InGaN/GaN, InGaN/InGaN, AlGaN/GaN, InAlGaN/GaN, GaAs (InGaAs). /AlGaAs, GaP (InGaP) / may be formed of any one or more pair structure of AlGaP, but is not limited thereto. In this case, the well layer may be formed of a material having an energy band gap smaller than that of the barrier layer.

The second conductivity type semiconductor layer 226 may be formed of a semiconductor compound. The second conductivity type semiconductor layer 226 may be implemented with a group III-V or group II-VI compound semiconductor, and may be doped with a second conductivity type dopant. The second conductivity type semiconductor layer 226 is, for example, In _x Al _y Ga ₁ -x- _y N ( _{0≤≤x≤≤1} , 0≤≤y≤≤1, 0≤≤x+y≤≤1) It may be formed of any one or more of a semiconductor material having a composition formula of AlGaN, GaNAlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP.

When the second conductivity-type semiconductor layer 226 is a p-type semiconductor layer, the second conductivity-type dopant may be a p-type dopant such as Mg, Zn, Ca, Sr, or Ba. The second conductivity type semiconductor layer 226 may be formed as a single layer or a multilayer, but is not limited thereto.

Although not shown, an electron blocking layer may be disposed between the active layer 224 and the second conductivity type semiconductor layer 226 . The electron blocking layer may have a superlattice structure. In the superlattice, for example, AlGaN doped with a second conductivity type dopant may be disposed, and GaN having a different composition ratio of aluminum is formed as a layer. A plurality may be alternately disposed with each other.

The surface of the first conductivity-type semiconductor layer 222 may be uneven as shown to improve light extraction efficiency.

A second conductive layer 236 may be disposed under the second conductivity-type semiconductor layer 226 . The second conductive layer 236 may be disposed to be in surface contact with the second conductive semiconductor layer 226 , but not in the region where the through electrode 233 is formed. In addition, the edge of the second conductive layer 236 may be disposed more outside than the edge of the second conductive type semiconductor layer 226 . In order to secure a region where the second electrode pads 236a and 236b are disposed it is for

The second electrode 236 may be made of a conductive material, specifically, a metal, and more specifically, silver (Ag), aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni). ), copper (Cu), and gold (Au) including at least one may be formed in a single-layer or multi-layer structure.

A passivation layer 280 may be formed around the light emitting structure 220 . The passivation layer 280 may be formed of an insulating material, and the insulating material may be formed of a non-conductive oxide or nitride. As an example, the passivation layer 280 may include a silicon oxide (SiO ₂ ) layer, an oxynitride layer, and an aluminum oxide layer.

The passivation layer 280 may be disposed on the periphery of the light emitting structure 200 and also on the edge of the second conductive layer 236 disposed outside the edge of the second conductive semiconductor layer 226 described above. have. The passivation layer 280 disposed on the edge of the second conductive layer 236 may be open in the region where the second electrode pads 236a and 236b are formed.

A first conductive layer 232 may be disposed under the second conductive layer 236 with an insulating layer 285 interposed therebetween, and the first conductive layer 232 may be made of a conductive material, in detail It may be made of a metal, and more specifically, including at least one of silver (Ag), aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (Au). It may be formed in a single-layer or multi-layer structure.

A plurality of through electrodes 233 are disposed extending upward from the first electrode 232 . The through electrodes 233 include an insulating layer 285 , a second electrode 236 , and a second conductivity type semiconductor layer 226 . It penetrates through the active layer 234 and extends to a portion of the first conductivity type semiconductor layer 222 , so that the upper surface of the through electrode 233 may make surface contact with the first conductivity type semiconductor layer 222 .

A cross section of each through electrode 233 may be circular or polygonal. The above-described insulating layer 285 is disposed to extend around the through electrode 233 , and forms the through electrode 233 with the second conductive layer 226 , the second conductivity type semiconductor layer 226 , and the active layer 224 . can be electrically insulated.

An ohmic layer 240 may be disposed under the first conductive layer 232 .

The ohmic layer 240 may be about 200 angstroms thick. The ohmic layer 240 includes indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and indium gallium tin oxide (IGTO). ), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-GaZnO), IGZO (In-GaZnO), ZnO, IrOx, RuOx, NiO , RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, Au, It may be formed by including at least one of Hf, but is not limited to these materials.

A reflective layer 250 that may act as a reflective electrode may be disposed under the ohmic layer. The reflective layer 250 is made of tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), silver (Ag), nickel (Ni), platinum (Pt), rhodium (Rh), or Al or Ag. It may be formed of a metal layer including an alloy containing Pt or Rh. Aluminum, silver, or the like can effectively reflect the light propagating in the lower direction of FIG. 2 in the active layer 224 to greatly improve the light extraction efficiency of the semiconductor device.

The width of the reflective layer 250 may be narrower than the width of the ohmic layer 240 , and the channel layer 260 may be disposed under the reflective layer 250 . The width of the channel layer 260 may be greater than the width of the reflective layer 250 to surround the reflective layer 250 . The channel layer 260 may be made of a conductive material, for example, gold (Au) or tin (Sn).

The conductive support substrate 270 may be formed of a conductive material such as a metal or a semiconductor material. A metal having excellent electrical conductivity or thermal conductivity may be used, and heat generated during operation of a semiconductor device should be sufficiently dissipated, so it may be formed of a material (eg, metal, etc.) having high thermal conductivity. For example, it may be made of a material selected from the group consisting of molybdenum (Mo), silicon (Si), tungsten (W), copper (Cu) and aluminum (Al) or an alloy thereof, and also gold (Au). ), copper alloy (Cu Alloy), nickel (Ni), copper-tungsten (Cu-W), carrier wafer (eg GaN, Si, Ge, GaAs, ZnO, SiGe, SiC, SiGe, Ga ₂ O ₃ , etc.) and the like may optionally be included.

The support substrate 270 does not cause warpage to the entire nitride semiconductor, and 50 to 200 in order to have a degree of mechanical strength to be well separated into separate chips through a scribing process and a breaking process. It can be made to a thickness of micrometers.

Although not shown, the bonding layer 236, the channel layer 260 and the conductive support substrate 270 are bonded to each other, and gold (Au), tin (Sn), indium (In), aluminum (Al), silicon (Si) is used. , silver (Ag), nickel (Ni) and copper (Cu) may be formed of a material selected from the group consisting of, or an alloy thereof.

In the light emitting device 200a according to the present embodiment, a current is uniformly supplied from the first conductive layer 236 to the entire region of the first conductive semiconductor layer 222 through the through electrode 233, and the second electrode 236 ) and the current may be uniformly supplied to the entire region of the second conductivity type semiconductor layer 226 in surface contact. In addition, electrode pads 236a and 236b are disposed on the second conductive layer 236 around the light emitting structure 220 , so that a current can be uniformly supplied to the entire area of the second conductive layer 236 . Accordingly, the frequency in which electrons injected through the first conductivity type semiconductor layer 222 and holes injected through the second conductivity type semiconductor layer 226 combine in the active layer 224 increases, and The amount of emitted light may increase.

3 is a view showing another embodiment of a light emitting device.

Referring to FIG. 3 , in the light emitting device of the embodiment, a through electrode 233 provided to protrude upward by a predetermined height, is disposed on an outer circumferential surface of the through electrode 233 to separate the through electrode 233 from the second conductive layer 236 . The insulating layer 285 to insulate and a reflective metal 285A disposed on one surface of the insulating layer 285 to reflect light emitted from the active layer 224 may be included.

In general, the light emitting device is manufactured to be stacked in the reverse order to the structure shown in FIG. 3 .

More specifically, in the light emitting device of the embodiment, the first conductive layer 232 is disposed at the bottom, the second conductive layer 236 is stacked on the first conductive layer 232 , and the second conductive layer 236 is stacked on top of the first conductive layer 232 . ), the second conductivity type semiconductor layer 226 , the active layer 224 , and the first conductivity type semiconductor layer 222 are sequentially stacked on top of each other.

However, the light emitting device of the embodiment may be manufactured so that each semiconductor layer is stacked in a reverse order to the above-described order, mesa-etched, and then reversely reversed and combined with a substrate (not shown).

The light emitting device of the embodiment may be manufactured by penetrating the reflective metal 285A between the insulating layer 285 and the active layer 224 after the active layer 224 is mesa-etched.

Because the reflective metal 285A is disposed under the active layer 224 for emitting ultraviolet light, the light emitted from the active layer 224 is prevented from being absorbed by the semiconductor layer stacked inside the light emitting device, thereby increasing the light extraction efficiency. It works.

FIG. 4 is a view showing in detail another embodiment of a portion X of the light emitting structure of FIG. 3 .

Referring to FIG. 4 , a portion X on which the reflective metal 285A disposed in FIG. 3 is disposed may include at least one or more step portions 2851 and 2853 .

This increases the movement path of the penetrating reflective metal 285A due to including the plurality of step portions 2851 and 2853 to prevent the intrusion into the mesa region of the active layer 224, thereby improving the reliability of the light emitting device. there is

In more detail, the step portions 2851 and 2853 are concave portions 2851 and concave portions provided so that one surface becomes a first height D1 toward the top with respect to the bottom surface of the reflection rapid 285A. A protrusion 2853 provided to protrude from one surface of the 2851 by a second height D2 may be included.

The first height D1 is preferably provided to be less than 2um, and the second height D2 is preferably provided to be smaller than the first height D1.

This is because if the first height D1 is provided in excess of 2 μm, the active layer 224 may be invaded and the reliability of the light emitting device may be deteriorated.

When the second height D2 is greater than the first height D1, the reflective metal 285A penetrating between the insulating layer 285 and the active layer 224 is prevented from moving to the next step portions 2851 and 2853. This is because it is difficult to achieve the effect of improving the reliability of the light emitting device by increasing the movement path of the penetrating reflective metal 285A.

The concave portion 2851 may be provided to have a first width W1.

In addition, at least one concave portion 2851 may be provided, and may include both the concave portion 2851 having the first width W1 and the concave portion 2851 having the second width W2 .

The first width W1 and the second width W2 may be the same as each other.

In addition, the first width W1 and the second width W2 may be provided to be different from each other, the first width W1 may be provided longer than the second width W2, and on the contrary, the first width W1 is It may be provided shorter than the second width W2.

However, the above-described concave portion 2851 and the protrusion 2853 show an embodiment, and the user may change the shape and size of the concave portion 2851 and the protrusion 2853 as needed, which is the embodiment of the present invention. It does not limit the scope of rights.

For example, one surface of the concave portion 2851 in the embodiment is illustrated in a planar shape, but one surface of the concave portion 2851 may be provided as a curved surface concave toward the top.

Because one surface of the concave portion 2851 is provided with a curved surface concave toward the top, it provides a space that can accommodate a larger amount of the reflective metal 285A, thereby increasing the movement path of the reflective metal 285A longer. can have an effect.

In addition, although one surface of the protrusion 2853 in the embodiment is illustrated in a planar shape, one surface of the protrusion 2853 may be provided as a curved surface convex toward the bottom.

Because one surface of the protrusion 2853 is provided with a convex curved surface toward the bottom, the edge is removed and the movement path of the penetrating reflective metal 285A is increased, while at the same time, the penetration rate is increased to shorten the manufacturing time. there is

5A and 5B are top views of the light emitting device of FIGS. 2 and 3 .

In FIG. 5A , through electrodes 233 are disposed under the first conductivity type semiconductor layer 222 , and an insulating layer 285 is disposed around each of the through electrodes 233 . The through electrode 233 and the insulating layer 285 are disposed under the first conductivity type semiconductor layer 222 and may not be seen in the top view, but are illustrated for convenience of understanding.

The second electrodes 236a and 236b are disposed outside the passivation layer 280 . The second electrode 236b disposed in the 'D' region is larger than the second electrode 236a disposed in other regions having different widths, and may be a region to which a wire is to be bonded.

In the top view shown in FIG. 5B , a recess is disposed in a region 'B' of the surface of the second conductivity type semiconductor layer 222 , and the above-described recess may be disposed between the through electrodes 233 .

In the light emitting devices 200a and 200b according to the above-described embodiments, the through electrode 233 connected from the first conductive layer 232 to the first conductive type semiconductor layer 222 is evenly disposed over the entire region, so that the first conductivity Electric current is uniformly supplied to the entire region of the semiconductor layer 222 , and thus electrons and holes are smoothly combined in the entire region of the light emitting structure 220 , thereby improving luminous efficiency.

6 is a view showing an embodiment of a light emitting device package.

In the light emitting device package according to the present embodiment, a groove may be formed in the conductive substrate 300 , and the light emitting device 200b according to the above-described embodiments may be disposed in the above-described groove. At least a portion of a side surface and a bottom surface of the light emitting device 200b may be coupled to the conductive substrate 300 , and may be coupled to each other using solder 310 or the like.

A dielectric layer 320 is disposed on the upper surface of the conductive substrate 300 , and a pad 330 for bonding is disposed on the dielectric layer 320 , so that one electrode and a wire 340 of the light emitting device 200b are formed. can be bonded. In addition, the other electrode of the light emitting device 200b may be coupled to the conductive substrate 300 and electrically connected thereto.

The molding part 350 is formed around the light emitting device 200b, and the molding part 350 can protect the light emitting device 200b and change the path of light emitted from the light emitting device 350. As shown in FIG.

One or a plurality of light emitting devices may be mounted in the above-described light emitting device package, but the present invention is not limited thereto.

Hereinafter, as an embodiment of the lighting system in which the above-described light emitting device package is disposed, an image display device and a lighting device will be described.

A plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and optical members such as a light guide plate, a prism sheet, a diffusion sheet, and a fluorescent sheet may be disposed on a path of light emitted from the light emitting device package. Such a light emitting device package, a substrate, and an optical member may function as a backlight unit or function as a lighting unit, for example, the lighting unit may include automotive lighting, outdoor lighting, a backlight unit of a display panel, indicating devices such as indicator lights or traffic lights, lamps , may include street lights.

A plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and optical members such as a light guide plate, a prism sheet, a diffusion sheet, etc. may be disposed on a light path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member may function as a backlight unit.

In addition, it may be implemented as a display device, an indicator device, and a lighting device including the light emitting device package according to the embodiment.

Here, the display device includes a bottom cover, a reflecting plate disposed on the bottom cover, a light emitting module emitting light, a light guide plate disposed in front of the reflecting plate and guiding light emitted from the light emitting module in front of the light guide plate An optical sheet including prism sheets disposed thereon, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying an image signal to the display panel, and a color filter disposed in front of the display panel may include Here, the bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit.

In addition, the lighting device includes a light source module including a substrate and a light emitting device package according to an embodiment, a heat sink for dissipating heat of the light source module, and a power supply unit that processes or converts an electrical signal provided from the outside and provides it to the light source module may include For example, the lighting device may include a lamp, a head lamp, or a street lamp.

The head lamp is a light emitting module including light emitting device packages disposed on a substrate, a reflector that reflects light emitted from the light emitting module in a predetermined direction, for example, forward, and a lens that refracts light reflected by the reflector forward. , and a shade that blocks or reflects a portion of light reflected by the reflector and directed to the lens to form a light distribution pattern desired by the designer.

In the above, the embodiment has been mainly described, but this is only an example and does not limit the present invention, and those of ordinary skill in the art to which the present invention pertains are not exemplified above in a range that does not depart from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiment may be implemented by modification. And the differences related to these modifications and applications should be construed as being included in the scope of the present invention defined in the appended claims.

100, 200a, 200b: light emitting device 120, 220: light emitting structure
122, 222: first conductivity type semiconductor layer 124, 224: active layer
126, 226: second conductivity type semiconductor layer 132: first electrode
136: second pole 232: first conductive layer
233: through electrode 236: second conductive layer
236a, 236b: second electrode 240: ohmic layer
250: reflective layer 260: channel
270: conductive support substrate 280: passivation layer
285: insulating layer 300: conductive substrate
310: solder 320: dielectric layer
330: pad 340: wire
350: molding unit

Claims (10)

a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer;
a second conductive layer disposed under the second conductive type semiconductor layer;
a first conductive layer disposed under the second conductive layer with an insulating layer interposed therebetween;
through electrodes passing through the second conductive layer, the second conductive semiconductor layer, and the active layer from the first conductive layer, and formed up to a portion of the first conductive semiconductor layer; and
a reflective metal disposed on one side of the insulating layer; and
and a step portion providing a space for accommodating a portion of the reflective metal,
The step portion is disposed on the second conductive layer,
The step portion,
a concave portion provided to be concave with respect to the bottom surface of the reflective metal; and
A light emitting device comprising a; a protrusion protruding from one surface of the concave portion. delete delete delete The method of claim 1,
The upper surface of the concave portion is a flat light emitting device. The method of claim 1,
The upper surface of the concave portion is a light emitting device having a curved shape concave toward the active layer. The method of claim 1,
The lower surface of the protrusion is a flat light emitting device. The method of claim 1,
The lower surface of the protrusion is a light emitting device having a convex curved surface toward the reflective metal. According to claim 1,
The height of the step portion is less than 2um from the reflective metal light emitting device. a conductive substrate with grooves formed thereon; and
It comprises the light emitting device of any one of claims 1, 5 to 9, wherein at least a portion is inserted into the groove of the conductive substrate and disposed,
A light emitting device package in which at least a portion of a side surface and a bottom surface of the light emitting device are coupled to the conductive substrate.

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