KR102405589B1 - Semiconductor device - Google Patents

Abstract

A semiconductor device according to the present invention includes a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; and a reflective layer disposed around the semiconductor structure. and, wherein the semiconductor structure includes a first region that is a region from which light is emitted to the outside of the semiconductor device and a second region that is a region that emits light from the semiconductor structure, wherein the first region and the second region have different areas. can have
Through the semiconductor device according to the present invention, it is possible to realize high luminance through a lower driving current.

Description

semiconductor device

The present invention relates to a semiconductor device.

The Group 3-5 or Group 2-6 compound semiconductor has many advantages, such as having a wide and easily adjustable bandgap energy, so it is a cooling component that constitutes a transmission module of an optical communication means and a backlight of an LCD (Liquid Crystal Display) display device. It is being applied to light emitting diode backlights that replace CCFL (Cold Cathcode Fluorescence Lamp), white light emitting diode lighting devices that can replace fluorescent or incandescent bulbs, automobile headlights, and traffic lights.

Recently, a semiconductor device is applied as a high-brightness light source, and for this purpose, a high voltage power is applied to drive the semiconductor device.

In order to secure the reliability of the semiconductor device at high current density, the development of the semiconductor device is continuously being made.

An object of the present invention is to provide a semiconductor device that realizes high luminance with a low driving current.

A semiconductor device according to the present invention includes: a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; and a reflective layer disposed around the semiconductor structure. wherein the semiconductor structure includes a first region that is a region from which light is emitted to the outside of the semiconductor device and a second region that is a region that emits light from the semiconductor structure, wherein the first region has an area smaller than that of the second region. can

Also, an area ratio of the first region to the second region may be 0.4 or more and 0.6 or less.

Also, an area ratio of the first region to the second region may be adjusted by disposing the reflective layer.

Also, an area of the first region may be 40% or more to 60% or less of the second region.

In addition, the area of the reflective layer is 40% or more to 60% or less of the area of the second region.

In addition, the reflective layer may have a thickness of 0.1 μm or more to 5 μm or less.

In addition, the reflective layer may be disposed on four surfaces of the semiconductor structure.

A semiconductor device according to the present invention includes: a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a wavelength conversion layer disposed on the semiconductor structure; and a reflective layer disposed on the periphery of the wavelength conversion layer, wherein the semiconductor structure includes a first region emitting light to the outside, a region emitting light from the semiconductor structure includes a second region, and the first region includes a first region It has an area smaller than two regions, and the light excited by the wavelength conversion layer may be emitted through the first region.

Also, the wavelength conversion layer may have the same area as a top surface of the semiconductor structure and be disposed on the semiconductor structure.

In addition, the wavelength conversion layer may include a wavelength conversion material, and the wavelength conversion material may be a phosphor.

In addition, the reflective layer may be disposed on four surfaces of the wavelength conversion layer.

High brightness can be realized with low driving current through the semiconductor device according to the present invention.

In addition, it is possible to prevent damage to the semiconductor device by reducing the current density in the semiconductor device.

In addition, it is possible to improve the light extraction efficiency of the semiconductor device.

1 is a top view of a semiconductor device according to a first embodiment.
2 is a cross-sectional view of the semiconductor device according to the first embodiment.
3 shows the path of light emitted from the side of the semiconductor structure.
4 is a top plan view of a semiconductor device according to a second embodiment.
5 is a cross-sectional view of a semiconductor device according to a second embodiment.
6 is a graph showing the current density according to the area of the second region;
7 is a graph showing the luminous flux and luminance according to the area ratio (first region/second region).

The above-described object and technical configuration of the present invention and details regarding the operational effects thereof will be more clearly understood by the following detailed description.

In the description of the present invention, each layer (film), region, pattern or structure is referred to as “on” or “under/under” the substrate, each layer (film), region, pad or pattern. The description of “disposed to” includes both those that are disposed directly or through another layer. The standards for the upper/above or lower/lower layers of each layer will be described with reference to the drawings.

The present embodiments may be modified in other forms or various embodiments may be combined with each other, and the scope of the present invention is not modified to each embodiment described below.

Even if a matter described in a specific embodiment is not described in another embodiment, it may be understood as a related description in another embodiment unless a description contradicts or contradicts the matter in the other embodiment.

Terms such as first, second, etc. used below are merely identification symbols for distinguishing the same or corresponding components, and the same or corresponding components are not limited by terms such as first and second.

The singular expression includes the plural expression unless the context clearly dictates otherwise. Terms such as “comprises” or “have” are intended to designate that a feature, number, step, action, component, part, or combination thereof described in the specification exists, and includes one or more other features or numbers, It is to be construed that one or more other features or numbers, steps, operations, components, parts, or combinations thereof may be added to indicate that there is a step, action, component, part, or combination thereof. can

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

1 is a top view of the semiconductor device according to the first embodiment, and FIG. 2 is a cross-sectional view of the semiconductor device according to the first embodiment taken along the A-A' direction of FIG. 1 .

As shown in FIG. 2 , the semiconductor device according to the first embodiment includes a first conductive semiconductor layer 112 , a second conductive semiconductor layer 116 , the first conductive semiconductor layer 112 and the first conductive semiconductor layer 112 . A semiconductor structure 110 including an active layer 114 disposed between two conductive semiconductor layers 116 , a substrate 150 , a first conductive layer 144 , a second conductive layer 142 , and a through electrode 146 . ), an insulating layer 170 and a reflective layer 120 may be included.

The semiconductor device according to the first embodiment is described based on a vertical semiconductor device, but is not limited thereto, and may be a horizontal type semiconductor device other than a vertical type.

)의 조성식을 갖는 반도체를 포함하며 GaN, AlGaN, InGaN, InAlGaN 중 적어도 하나를 포함할 수 있으나 이에 한정되지는 않는다.The first conductive semiconductor layer 112 may be implemented with a compound semiconductor such as Group III-5, Group II-6, etc., for example, Inx1Aly1Ga1-x1-y1N (

), and may include at least one of GaN, AlGaN, InGaN, and InAlGaN, but is not limited thereto.

The first conductive semiconductor layer 112 may be doped with a first dopant. When the first conductivity-type semiconductor layer 112 is an n-type semiconductor, the first conductivity-type dopant is an n-type dopant and may include at least one of Si, Ge, Sn, and Te, but is not limited thereto.

The first conductive semiconductor layer 112 may be formed of a single layer or a multilayer, but is not limited thereto.

A reflective layer 120 may be disposed on the first conductive semiconductor layer 112 .

Although not shown, the light extraction efficiency may be improved by forming irregularities on the surface of the first conductive semiconductor layer 112 .

In the active layer 114 , electrons (or holes) injected through the first conductivity type semiconductor layer 112 and holes (or electrons) injected through the second conductivity type semiconductor layer 116 meet, thereby forming the active layer 114 . A layer that emits light due to a difference in the band gap of energy bands according to constituent materials, and may be disposed between the first conductive semiconductor layer 112 and the second conductive semiconductor layer 116 .

The active layer 114 may include any one of a single quantum well, a multiple quantum well (MQW), a quantum wire structure, or a quantum dot structure, but is not limited thereto.

The active layer 114 is formed of a compound semiconductor material of a group 3-5 element to form a well layer and a barrier layer, for example, AlGaN/AlGaN, InGaN/GaN, InGaN/InGaN, AlGaN/GaN, InAlGaN/GaN, GaAs (InGaAs). It may be formed in a pair structure including at least one of /AlGaAs and GaP(InGaP)/AlGaP, but is not limited thereto.

The second conductive semiconductor layer 116 includes a compound semiconductor such as Group III-5, Group II-6, for example, a semiconductor having a composition formula of Inx5A1yGa-x5-y2N(), and includes A1InN, A1GaAs, GaP, It may include at least one of GaAs, GaAsP, and A1GaInP, but is not limited thereto.

The second conductive semiconductor layer 116 may be doped with a second dopant. When the second conductivity-type semiconductor layer 116 is a p-type semiconductor, the second conductivity-type dopant is a p-type dopant and may include, but is not limited to, Ng, Wn, Ca, Sr, C, and Ba.

In the first embodiment, it is assumed that the first conductive semiconductor layer 112 is an n-type semiconductor layer and the second conductive semiconductor layer 116 is a p-type semiconductor layer, but the present invention is not limited thereto. The semiconductor layer 112 may be a p-type semiconductor layer, and the second conductive semiconductor layer 116 may be formed of an n-type semiconductor layer.

Although not shown, an electron blocking layer (EBL) may be disposed between the active layer 114 and the second conductive semiconductor layer 116 . The electron blocking layer (EBL) blocks the flow of electrons (or holes) supplied from the first conductive semiconductor layer 112 to the second conductive semiconductor layer 116 , and thus electrons and holes in the active layer 114 . The luminous efficiency can be improved by increasing the probability of this recombination. The energy band gap of the electron blocking layer may be larger than that of the active layer 114 or the second conductive semiconductor layer 116 .

)의 조성식을 갖는 반도체물질, AlGaN, InGaN, InA1GaN 등에서 적어도 하나를 포함할 수 있으나 이에 한정되지는 않는다.The electron blocking layer (EBL) is Inx1A1y1Ga1-x1-y1N (

) may include at least one of a semiconductor material having a composition formula of AlGaN, InGaN, InA1GaN, and the like, but is not limited thereto.

The electron blocking layer (EBL) may have a superlattice structure. In the superlattice, A1GaN doped with a second conductivity type dopant may be disposed, and GaN having a different composition ratio of aluminum is formed as a layer. A plurality may be alternately disposed with each other, but is not limited thereto.

A passivation layer 160 may be disposed on a sidewall of the semiconductor structure 110 . Since the active layer 114 exposed to the outside can act as a current leakage path during light emission of the semiconductor device, this problem can be prevented by disposing the passivation layer 160 on the sidewall of the semiconductor structure 110 .

The passivation layer 160 may be disposed on the edge of the second conductive layer 142 disposed outside the sidewall of the semiconductor structure 110 and the edge of the second conductive semiconductor layer 116 .

,

,

,TiO2,AlN 등에서 적어도 하나를 포함할 수 있으나 이에 한정되지는 않는다. 상기 페시베이션층(160)은 설계에 따라 생략될 수 있다.The passivation layer 160 may be made of an insulating material, and the insulating material may be made of a non-conductive oxide or nitride. The passivation layer 160 is

,

,

, TiO 2 , AlN, etc. may include at least one, but is not limited thereto. The passivation layer 160 may be omitted depending on the design.

A second conductive layer 142 may be disposed on the second conductive semiconductor layer 116 . The second conductive layer 142 is disposed in surface contact with the second conductive semiconductor layer 116 , but may not exist in the region where the through electrode 146 is disposed.

The edge of the second conductive layer 142 may be disposed to extend further outward than the edge of the second conductive semiconductor layer 116 .

The second conductive layer 142 may be made of a conductive material, and may have a single-layer or multi-layer structure including Ag, Al, Ti, Cr, Ni, Cu and Au.

The first conductive layer 144 may be disposed on the second conductive layer 142 , and the insulating layer 170 may be disposed between the second conductive layer 142 and the first conductive layer 144 . have.

The insulating layer 170 is disposed between the first conductive layer 144 and the second conductive layer 142 and on the sidewall of the through electrode 146, and the first conductive layer ( 144 may be electrically insulated from the second conductive layer 142 , the second conductive semiconductor layer 116 , and the active layer 114 .

The first conductive layer 144 may be made of a conductive material, and may include at least one of Ag, Al, Ti, Cr, Ni, Cu, and Au as a single layer or multiple layers.

The first conductive layer 144 and the second conductive layer 142 may be made of different materials, but are not limited thereto.

A plurality of through electrodes 146 may be disposed on the first conductive layer 144 , and the through electrodes 146 include an insulating layer 170 , a second conductive layer 142 , and a second conductive semiconductor layer. A portion of the first conductive semiconductor layer 112 may be exposed through 116 and the active layer 114 .

The through electrode 146 may be electrically connected to the first conductive semiconductor layer 112, and may have an n-pole or a p-pole depending on whether the first conductive semiconductor layer 112 is an n-type semiconductor or a p-type semiconductor. .

The through electrode 146 may be disposed on the unevenness formed on the upper surface of the first conductive semiconductor layer 112 depending on the shape of the semiconductor device, such as a horizontal type, but is not limited thereto.

The shape of the cross section of each through electrode 146 may be circular or polygonal, but is not limited thereto.

The insulating layer 17 is disposed around the through electrode 146 to electrically insulate the through electrode 146 from the second conductive layer 142 , the second conductive semiconductor layer 116 and the active layer 114 . can

The substrate 150 may be an insulating or conductive substrate, and may include at least one of sapphire, SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but is not limited thereto. The substrate 150 may be a material suitable for semiconductor material growth or a carrier wafer.

Although not shown, a buffer layer may be disposed between the substrate 150 and the semiconductor structure 110 .

A reflective layer 120 may be disposed on the semiconductor structure 110 , and the reflective layer 120 may surround the semiconductor structure 110 and be disposed on four surfaces.

The reflective layer 120 may increase the amount of light extracted to the outside by reflecting the light incident from the semiconductor structure 110 , and may prevent light loss from the side of the semiconductor structure 110 .

3 shows the path of light emitted from the side of the semiconductor structure 110, by disposing the reflective layer 120, the light emitted from the side of the semiconductor structure 110 is reflected by the reflective layer 120, and the light extraction efficiency of the semiconductor device It can be seen that this is improved.

The reflective layer 120 may be formed of a non-light-transmitting material and a highly reflective material. For example, the highly reflective material may be a metal, for example composed of a metal or alloy including one or more of Ag, Ni, Al, Pd, Ir, Mg, Zn, Pt, Cu, Au, Hf, etc. Alternatively, SiO2 or TiO2 may be stacked to form a multi-layered structure.

The thickness d of the reflective layer 120 may be 0.5 μm or more and 5 μm or less. When the thickness d of the reflective layer 120 is 0.5 μm or more, the light emitted from the semiconductor structure 110 is reflected and the luminous flux is improved, so that the luminous flux characteristic can be secured and the reflective layer ( 120) may have a thickness d of 5 μm or less.

Since the region where the reflective layer 120 is disposed does not emit light, the area of the first region 30 of the semiconductor device can be adjusted by selecting the area of the reflective layer 120 .

The first region 30 means a region emitting light to the outside of the semiconductor device, and the second region 20 means a region emitting light from the semiconductor structure 110 . Since the second region 20 and the first region 30 have different areas, the effect of high luminance and luminous flux improvement can be obtained.

As the reflective layer 120 is disposed, the area of the first region 30 may be smaller than that of the second region 20 .

Regarding the area of the first region 30 according to the above-described area of the reflective layer 120, the area of the second region 20, and the area ratio of the first region 30 to the second region 20, the second implementation After describing an example, it will be described in detail.

4 is a top view of the semiconductor device according to the second embodiment, and FIG. 5 is a cross-sectional view of the semiconductor device according to the second embodiment taken along the line I-I′ of FIG. 4 .

As shown in FIG. 5 , the semiconductor device according to the second embodiment includes a first conductive semiconductor layer 112 , a second conductive semiconductor layer 116 , the first conductive semiconductor layer 1120 , and the first conductive semiconductor layer 112 . A semiconductor structure 110 including an active layer 114 disposed between two conductive semiconductor layers 114 , a substrate 150 , a first conductive layer 144 , a second conductive layer 142 , and a through electrode 142 . ), an insulating layer 170 , a reflective layer 120 , and a wavelength conversion layer 180 .

Configurations except for the wavelength conversion layer 180 are the same as the configuration of the semiconductor device according to the first embodiment, and thus a detailed description thereof will be omitted.

The wavelength conversion layer 180 may have the same area as one surface of the semiconductor structure 100 and be disposed on the semiconductor structure 100 .

The wavelength conversion layer 180 surrounds the circumference of the semiconductor structure 110 and may be disposed on four surfaces.

The wavelength conversion layer 180 may excite the light emitted from the semiconductor structure 110 to convert it into light having a different wavelength.

The wavelength conversion layer 180 may be made of a polymer resin containing a wavelength conversion material. The polymer resin may include at least one of a permeable epoxy resin, a silicone resin, a polyimide resin, a urea resin, and an acrylic resin, but is not limited thereto.

In addition, the wavelength conversion material included in the wavelength conversion layer 180 may be distributed over the entire area of the wavelength conversion layer 180 , and may be deposited and disposed on one side of the wavelength conversion layer 180 . However, the present invention is not limited thereto.

The wavelength conversion material may be a phosphor. The wavelength conversion material may include at least one of a sulfide-based compound, an oxide-based compound, and/or a nitride-based compound. However, the present invention is not limited thereto, and various colors may be selected in order to realize a color desired by the user.

The reflective layer 120 may be disposed on four surfaces along the upper periphery of the wavelength conversion layer 180 , and the wavelength conversion layer 180 is higher than the reflection layer 120 is disposed on the semiconductor structure 110 . It can be efficient in terms of process yield to be disposed on.

In addition, when the reflective layer 120 is disposed on the wavelength conversion layer 180 , the region emitting light from the semiconductor structure 110 includes a second region 20 , and the first region and the second region Light excited by the wavelength conversion layer 180 may have different areas and may be emitted through the first region 30 .

In general, a high driving current is required to implement a high-brightness semiconductor device, and accordingly, the current density applied to the semiconductor device increases. When the applied current density of the semiconductor device is increased, the semiconductor device is damaged and reliability is deteriorated.

When the size of the semiconductor device is increased to prevent damage to the semiconductor device, a low driving current is applied to the semiconductor device, thereby reducing the current density applied to the semiconductor device, but high luminance cannot be realized. In the semiconductor device according to the present invention, since the first region 30 and the second region 20 have different areas, a high-brightness semiconductor device can be realized with a low driving current.

In order to realize high luminance, the areas of the first region 30 and the second region 20 of the semiconductor device may be selected through the following steps.

The step of selecting the area of the first region 30 and the second region 20 for realizing the high-brightness semiconductor device includes the steps of checking the driving current of the semiconductor device, checking the current density of the semiconductor device, and the current density. The method may include selecting the area of the second region in consideration of , and selecting the area of the first region 30 in consideration of luminance and luminous flux.

In the step of checking the driving current of the semiconductor device, the designer checks the driving current of the semiconductor device before designing the semiconductor device.

In the step of ascertaining the current density of the semiconductor device, it is possible to determine the current density that can be sustained according to the size of the semiconductor device. The current density can be confirmed through various data.

For example, Table 1 shows data on the current density of a semiconductor device having a driving current of 3.5A and an area of the first region 30 and the second region 20 of 1:1. The step of selecting the first region 30 and the second region 20 will be described based on Table 1, but is not limited thereto, and various data other than Table 1 may be used.

First area and second area size (mm) Area of the second region (mm2) Current density (A/cm2) width Vertical 0.71 0.71 0.50 700 0.77 0.77 0.60 583 0.84 0.84 0.70 500 0.89 0.89 0.80 438 0.95 0.95 0.90 389 1.00 1.00 1.00 350 1.12 1.12 1.25 280 1.22 1.22 1.50 233 1.32 1.32 1.75 200 1.41 1.41 2.00 175 1.50 1.50 2.25 156 1.58 1.58 2.50 140 1.66 1.66 2.75 127 1.73 1.73 3.00 117 1.80 1.80 3.25 108 1.87 1.87 3.50 100 1.94 1.94 3.75 93 2.00 2.00 4.00 88

Through Table 1, the size of the semiconductor device is proportional to the area of the second region 20, and the current density value according to the size of the semiconductor device can be confirmed.

In addition, as the area of the second region 20 increases, it can be confirmed that the current density decreases and the area of the second region 20 according to the current density.

6 is a graph showing the current density according to the area of the second region 20, and it can be seen that the current density decreases as the area of the second region 20 increases.

In the step of selecting the area of the second area 20 , the area of the second area 20 may be selected based on Table 1 above.

For example, in the case of a vehicle high-brightness semiconductor device, a driving current of 3A or more is applied and the current density is 330A/cm2 or more. can Accordingly, the area of the second region 30 may be selected with reference to the data shown in Table 1 according to the application field of the semiconductor device.

Since the selected second region 20 was selected based on data in which the area of the second region 20 compared to the first region 30 is 1:1, in order to reduce the current density, the second region 20 ) is increased, the first region 30 may also be increased.

The luminance is the luminous flux compared to the luminous area, so that the luminous area is reduced and the luminous flux is increased to realize high luminance. When the second region 20 is increased, the luminous flux may be increased, but the area may also be increased, so it may be difficult to secure high luminance.

The semiconductor device according to the embodiment secures the luminous flux through the selected second region 20 and selects the first region 30 having a smaller area than the second region 20 to reduce the emission area to realize high luminance can

Accordingly, the first region 30 in consideration of luminance may be selected based on the area ratio of the first region 30 to the second region 20 .

In the step of selecting the area of the first area 30 , the second area with reference to Table 2 and FIG. 4 is based on the area of the second area 20 selected in the step of selecting the area of the second area 20 . The area of the first region 30 may be selected based on the ratio of the area of the first region 30 to (20).

Area ratio (first area/second area) Luminous flux (%) Luminance (%) 1.00 100 100 0.96 102 107 0.91 104 114 0.87 104 121 0.82 105 127 0.78 104 134 0.73 103 141 0.69 102 148 0.64 99 154 0.60 96 161 0.56 93 167 0.51 89 174 0.47 84 180 0.42 79 186 0.38 72 192 0.33 66 197 0.29 58 202 0.24 50 206 0.20 42 209 0.16 33 210 0.11 23 205 0.07 12 187 0.02 One 51

For convenience, an area ratio of the first region 30 to the second region 20 is described as an area ratio.

Table 2 is a table showing the luminous flux and luminance according to the area ratio, and FIG. 4 is a graph showing the luminous flux and the luminance according to the area ratio based on Table 2.

As shown in FIG. 7 , when the area ratio is 1, based on the luminous flux and luminance of 100%, as the area ratio increases, it can be confirmed that the luminance continues to increase in proportion to the area ratio and then decreases. .

The above-described luminous flux and luminance are important factors in semiconductor devices, and in particular, when designing a vehicle headlamp optical, the luminous flux is the wide width, and the luminance is the long-distance design factor. In order to secure wide width and long-distance visibility, an appropriate range for both factors may be selected by the designer.

In order to secure the wide width and long-distance visibility described above, the luminous flux may be 75% or more to 96% or less, and the luminance may be 160% or more to 190% or less, and the luminous flux and luminance may have values within the range. The area ratio may be 0.4 or more and 0.6 or less.

Compared to the selected area of the second area 20 , the area of the first area 30 may be selected within the area ratio range.

The area ratio may be 0.4 or more and 0.6 or less.

When the area ratio is 0.4 or more, high luminance and luminous flux characteristics can be secured, and when the area ratio is 0.6 or more, the luminance decreases in inverse proportion to the area ratio. have.

The area of the reflective layer 120 may be 40% or more to 60% or less of the area of the second region 20 to implement the area ratio.

When the area ratio is 0.4 or more, the area of the reflective layer 120 compared to the area of the second region 20 selected to implement the area ratio may be 40% or more.

When the area ratio is 0.6 or less, the area of the reflective layer 120 compared to the area of the second region 20 selected to implement the area ratio may be 60% or less.

After implementing the semiconductor structure 110 according to the area of the second region 20 selected through the above-described steps, the first region 30 selected according to the area ratio can be realized by disposing the reflective layer 120 . have.

The semiconductor device package may mount at least one or a plurality of semiconductor devices, but is not limited thereto.

A plurality of semiconductor device packages may be arrayed on a substrate, and optical members such as a light guide plate, a prism sheet, a diffusion sheet, etc. may be disposed on a light path of the semiconductor device package to function as a backlight unit.

In addition, the semiconductor device package of the present invention can be applied to a display device, a lighting device, and an indicator device.

In this case, the display device may include a bottom cover, a reflector, a light emitting module, a light guide plate, an optical sheet, a display panel, an image signal output circuit, and a color filter. The bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit.

*The reflector is disposed on the bottom cover, and the light emitting module emits light. The light guide plate is disposed in front of the reflection plate to guide light emitted from the light emitting module forward, and the optical sheet is disposed in front of the light guide plate including a prism sheet. A display panel is disposed in front of the optical sheet, an image signal output circuit supplies an image signal to the display panel, and a color filter is disposed in front of the display panel.

In addition, the lighting device includes a light source module including a substrate and the semiconductor device package of the present invention, a heat dissipating unit for dissipating heat from the light source module, and a power supply unit for processing or converting an electrical signal received from the outside and providing it to the light source module can In addition, the lighting device may include a lamp, a head lamp, or a street lamp. In addition, the camera flash of the mobile terminal may include a light source module including the semiconductor device package of the present invention.

Although the present invention has been described as above, those of ordinary skill in the art to which the present invention pertains will recognize that the present invention may be implemented in other forms while maintaining the technical spirit and essential features of the present invention .

Although the scope of the present invention will be defined by the claims. It should be construed as being included in the scope of the present invention, as well as all changes or modifications derived from configurations that are directly derived from the claims described in the claims.

110: semiconductor structure
112: first conductive semiconductor layer
114: active layer
116: second conductive semiconductor layer
120: reflective layer
142: second conductive layer
144: first conductive layer
146: through electrode
150: substrate
160: passivation layer
170: insulating layer
180: wavelength conversion layer

Claims (12)

a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer;
a reflective layer disposed around the upper surface of the first conductive type semiconductor layer of the semiconductor structure;
a wavelength conversion layer disposed between the semiconductor structure and the reflective layer;
a passivation layer disposed on a sidewall of the semiconductor structure and surrounding at least a portion of a side surface of the wavelength conversion layer;
a second conductive layer disposed under the second conductive type semiconductor layer of the semiconductor structure;
a first conductive layer disposed under the second conductive layer;
an insulating layer disposed between the second conductive layer and the first conductive layer; and
It is disposed on the first conductive layer and passes through the insulating layer, the second conductive layer, the second conductive semiconductor layer and the active layer to electrically connect the first conductive layer and the first conductive semiconductor layer. a plurality of through-electrodes to
The semiconductor structure includes a first region in which light is emitted to the outside of the semiconductor device and a second region in which light is emitted from the semiconductor structure,
The first region has a smaller area than the second region,
An area ratio of the first region to the second region is 0.4 to 0.6 or less,
The thickness of the reflective layer is 0.5um or more to 5um or less, a semiconductor device.
delete delete delete delete delete delete According to claim 1,
A semiconductor device in which light emitted from the semiconductor structure is excited by the wavelength conversion layer and emitted through the first region.
delete 9. The method of claim 8,
The wavelength conversion layer includes a wavelength conversion material, and the wavelength conversion material is a phosphor.
According to claim 1,
The reflective layer is a semiconductor device disposed on four surfaces of the semiconductor structure.
9. The method of claim 8,
The reflective layer is a semiconductor device disposed on four surfaces on the wavelength conversion layer.

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