KR20190038105A - Light emitting device package and method of manufacturing the same - Google Patents

Abstract

The present invention provides a light emitting device package with increased light extraction efficiency. According to an embodiment of the present invention, the light emitting device package comprises: a light emitting device arranged on a lower surface of a light emitting structure and including a first electrode pad and a second electrode pad; and a wavelength conversion layer arranged on an upper surface and a lateral surface of the light emitting device. The first electrode pad and the second electrode pad are extended in a lower part of the wavelength conversion layer and the wavelength conversion layer includes an inorganic material and a wavelength conversion particle diffused to the inorganic material.

Description

[0001] LIGHT EMITTING DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME [0002]

Embodiments relate to a light emitting device package and a manufacturing method thereof.

Light emitting diodes (LEDs) are compound semiconductor devices that convert electrical energy into light energy. By controlling the composition ratio of compound semiconductors, various colors can be realized.

The nitride semiconductor light emitting device has advantages of low power consumption, semi-permanent lifetime, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps. Accordingly, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, a white light emitting diode lighting device capable of replacing a fluorescent lamp or an incandescent lamp, And traffic lights.

Chip Scale Package (CSP) packages can be fabricated by applying a phosphor layer directly to the flip chip. At this time, most packages are produced by dispersing phosphors in organic materials such as silicon. However, in the case of a high output package used in a vehicle, there is a problem that cracks are generated in the organic phosphor layer due to high light energy.

In addition, when a flip chip is used as a light source of a chip scale package, there is a problem that color conversion of the light emitted to the side or bottom of the flip chip is relatively difficult.

Embodiments provide a light emitting device package with improved light extraction efficiency.

Embodiments provide a light emitting device package with improved heat emission efficiency.

A light emitting device package according to an embodiment of the present invention includes: a light emitting device including a first electrode pad and a second electrode pad disposed on a lower surface of a light emitting structure; And a wavelength conversion layer disposed on an upper surface and a side surface of the light emitting element, wherein the first electrode pad and the second electrode pad extend to a lower portion of the wavelength conversion layer, the wavelength conversion layer includes an inorganic material, And the wavelength conversion particle is dispersed in the wavelength conversion particle.

The inorganic material may include glass.

The wavelength conversion layer may include a recess in which the light emitting device is disposed.

And an adhesive layer disposed between the light emitting device and the wavelength conversion layer.

And a reflective layer disposed between the first and second electrode pads and a lower portion of the wavelength conversion layer.

The reflective layer may extend between the first and second electrode pads and the light emitting structure, and the first electrode pad and the second electrode pad may be electrically connected to the light emitting structure through the reflective layer.

And a light-transmitting substrate disposed on the light-emitting structure.

The light emitting structure includes a first conductive semiconductor layer electrically connected to the first electrode pad, a second conductive semiconductor layer electrically connected to the second electrode pad, and a second conductive semiconductor layer electrically connected to the first conductive semiconductor layer, Type semiconductor layer.

The wavelength conversion layer may include a first irregular pattern disposed on at least a part of the outer surface.

And the wavelength conversion layer may include a second concavo-convex pattern disposed on at least a part of the inner surface of the recess.

A method of fabricating a light emitting device package according to an embodiment of the present invention includes: fabricating a wavelength conversion layer; Forming a plurality of recesses on one surface of the wavelength conversion layer, and disposing a light emitting structure on each of the plurality of recesses; Forming an electrode pad on one surface of the light emitting structure; And separating the plurality of light emitting device packages by separating the wavelength conversion layer. The step of forming the electrode pad may extend the electrode pad from one surface of the light emitting structure to one surface of the wavelength conversion layer have.

In the step of separating the package, the electrode pad formed on one surface of the wavelength conversion layer may be cut together.

The wavelength conversion layer includes an inorganic material and a wavelength conversion particle dispersed in the inorganic material, and the inorganic material may include glass.

The wavelength conversion layer may be formed by compressing a plurality of sub-layers.

According to the embodiment, the light extraction efficiency of the light emitting device package can be improved.

In addition, the heat generated in the light emitting structure can be rapidly emitted.

The various and advantageous advantages and effects of the present invention are not limited to the above description, and can be more easily understood in the course of describing a specific embodiment of the present invention.

1 is a cross-sectional view of a light emitting device package according to a first embodiment of the present invention,
Fig. 2 is a bottom view of Fig. 1,
3 is a view showing a reflective layer disposed on a side surface of the light emitting device package,
FIG. 4 is a view showing the light emitting device of FIG. 1,
5 is a cross-sectional view of a light emitting device package according to a second embodiment of the present invention,
Fig. 6 is a bottom view of Fig. 5,
7 is a cross-sectional view of a light emitting device package according to a third embodiment of the present invention,
8 is a cross-sectional view of a light emitting device package according to a fourth embodiment of the present invention,
9 is a cross-sectional view of a light emitting device package according to a fifth embodiment of the present invention,
Fig. 10 is a plan view of Fig. 9,
11A to 11D are cross-sectional views illustrating steps of fabricating a light emitting device package according to an embodiment of the present invention,
FIG. 12 is a view showing a method of manufacturing the wavelength conversion layer of FIG. 11A,
13 is a view illustrating a lamp for a vehicle according to an embodiment of the present invention.

The embodiments may be modified in other forms or various embodiments may be combined with each other, and the scope of the present invention is not limited to each embodiment described below.

Although not described in the context of another embodiment, unless otherwise described or contradicted by the description in another embodiment, the description in relation to another embodiment may be understood.

For example, if the features of configuration A are described in a particular embodiment, and the features of configuration B are described in another embodiment, even if the embodiment in which configuration A and configuration B are combined is not explicitly described, It is to be understood that they fall within the scope of the present invention.

In the description of the embodiments, in the case where one element is described as being formed "on or under" another element, the upper (upper) or lower (lower) or under are all such that two elements are in direct contact with each other or one or more other elements are indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention.

FIG. 1 is a cross-sectional view of a light emitting device package according to a first embodiment of the present invention, FIG. 2 is a bottom view of FIG. 1, FIG. 3 is a view in which a reflective layer is disposed on a side surface of the light emitting device package, FIG.

1 and 2, the light emitting device package 10 according to the embodiment includes a first electrode pad 170 and a second electrode pad 180 disposed on a lower surface 151 of the light emitting structure 150 A wavelength conversion layer 300 disposed on the upper surface and side surfaces of the light emitting device 100 and an adhesive layer 210 disposed between the light emitting device 100 and the wavelength conversion layer 300 .

The light emitting device package 10 may be a chip scale package (CSP). The chip scale package can be defined as a package made by placing a wavelength conversion layer directly on a chip without a separate package body.

The light emitting device 100 can emit light in the ultraviolet wavelength range or light in the blue wavelength range. The light emitting device 100 may be a flip chip having a first electrode pad 170 and a second electrode pad 180 disposed on a lower surface 151 thereof.

The wavelength conversion layer 300 may be made of an inorganic material. Illustratively, the wavelength conversion layer 300 may include a glass material. In general, automotive lamps can use high power packages. Such a high power package can emit high light energy by applying a high current. Therefore, organic matter such as silicon can crack due to high light energy. However, since the wavelength conversion layer 300 according to the embodiment is manufactured by sintering an inorganic material such as glass powder, the wavelength conversion layer 300 can withstand a higher light energy than an organic material.

The wavelength conversion particles (not shown) dispersed in the wavelength conversion layer 300 can absorb light emitted from the light emitting device 100 and convert the light into various colors (e.g., white light). For example, the wavelength converting particles may include at least one of a phosphor and a quantum dot (QD).

The phosphor may include any one of a YAG-based, TAG-based, silicate-based, sulfide-based, or nitrate-based fluorescent material, but the type of the fluorescent material is not particularly limited. When the light emitting device 100 is an ultraviolet LED, a blue phosphor, a green phosphor, and a red phosphor may be selected as the phosphor. When the light emitting device 100 is a blue LED, a green phosphor and a red phosphor may be selected as the phosphor, or a yellow phosphor (YAG) may be selected.

The wavelength conversion layer 300 may cover the upper surface and the side surface of the light emitting device 100. Accordingly, the wavelength conversion layer 300 can effectively change not only the light emitted to the upper surface of the light emitting device 100 but also the wavelength of the light emitted to the side surface of the light emitting device 100. 3, when the reflective layer 220 is disposed on the side surface, there is a problem that light emitted to the side surface of the light emitting device 100 is re-incident into the light emitting device 100 and absorbed by the reflective layer 220. Therefore, there is a problem that the light extraction efficiency is lowered.

1, the wavelength conversion layer 300 according to the embodiment includes an upper layer 310 disposed on the upper surface of the light emitting device 100 and a side wall 320 disposed on a side surface of the light emitting device 100 can do. The upper layer 210 and the sidewalls 320 may form a recess 301 formed in the lower surface of the wavelength conversion layer 300. The thickness d1 of the upper layer may be about 2 탆 to 300 탆. The thickness d2 of the side wall may be 0.3 to 1.3 times the thickness d1 of the upper layer.

The light emitting device 100 may be inserted into the recess 301. At this time, the adhesive layer 210 may be applied to the interior of the recess 301 to fix the light emitting device 100 to the recess 301. The kind of the adhesive layer 210 is not particularly limited. Illustratively, the adhesive layer 210 may be formed of a transparent material such as silicon or epoxy. According to the embodiment, since the wavelength conversion layer 300 is manufactured by sintering the glass powder, the light emitting device 100 can be inserted into the recess 301 after the recess 301 is formed first. The thickness of the adhesive layer 210 may be 2 탆 to 30 탆, but is not limited thereto.

4, the light emitting device 100 includes a light emitting structure 150 disposed under the light emitter plate 110, first and second electrode pads 170 and 170 disposed on the lower surface of the light emitting structure 150, 180).

The light emitter plate 110 includes a conductive substrate or an insulating substrate. The light emitter plate 110 may be a material or carrier wafer suitable for semiconductor material growth. The light emitter plate 110 may be formed of a material selected from sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge. The light emitter plate 110 may be removed as needed.

A buffer layer (not shown) may be further provided between the first conductivity type semiconductor layer 120 and the emitter plate 110. The buffer layer may mitigate lattice mismatch between the light emitting structure 150 and the emitter plate 110 provided on the light emitter plate 110.

The buffer layer may be a combination of Group III and Group V elements or may include any one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. The buffer layer may be doped with a dopant, but is not limited thereto.

The buffer layer can be grown as a single crystal on the light emitter plate 110, and the buffer layer grown with a single crystal can improve the crystallinity of the first conductivity type semiconductor layer 120.

The light emitting structure 150 may include a first conductive semiconductor layer 120, an active layer 130, and a second conductive semiconductor layer 140. In general, the light emitting structure 150 may be cut together with the light emitter plate 110 to be separated into a plurality of light emitting structures.

The first conductive semiconductor layer 120 may be formed of a compound semiconductor such as a Group III-V or a Group II-VI compound. The first conductive semiconductor layer 120 may be doped with a first dopant. The first conductivity type semiconductor layer 120 may be a semiconductor material having a composition formula of In _{x 1} A _{l y1} Ga _{1 -x1- y1} N (0 _{? X1 ? 1} , 0 _{? Y1? 1} , 0? X1 + y1? For example, GaN, AlGaN, InGaN, InAlGaN, and the like. The first dopant may be an n-type dopant such as Si, Ge, Sn, Se, or Te. When the first dopant is an n-type dopant, the first conductivity type semiconductor layer 120 doped with the first dopant may be an n-type semiconductor layer.

The active layer 130 is a layer where electrons (or holes) injected through the first conductive type semiconductor layer 120 and holes (or electrons) injected through the second conductive type semiconductor layer 140 meet. As the electrons and the holes recombine, the active layer 130 transitions to a low energy level and can generate light having a wavelength corresponding thereto.

The active layer 130 may have any one of a single well structure, a multiple well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, Is not limited thereto.

The second conductivity type semiconductor layer 140 may be formed on the active layer 130 and may be formed of a compound semiconductor such as a group III-V or II-VI group. In the second conductivity type semiconductor layer 140, The dopant can be doped. The second conductive semiconductor layer 140 may be formed of a semiconductor material having a composition formula of In _{x 5} Al _{y 2} Ga _{1 -x 5 -y2} N ( _{0 ? X5? 1, 0? Y2? 1} , 0? X5 + _y2? , AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second conductivity type semiconductor layer 140 doped with the second dopant may be a p-type semiconductor layer.

An electron blocking layer (EBL) may be disposed between the active layer 130 and the second conductive semiconductor layer 140. The electron blocking layer interrupts the flow of electrons supplied from the first conductivity type semiconductor layer 120 to the second conductivity type semiconductor layer 140 to increase the probability of recombination of electrons and holes in the active layer 130 . The energy band gap of the electron blocking layer may be greater than the energy band gap of the active layer 130 and / or the second conductivity type semiconductor layer 140.

The electron blocking layer may be formed of a semiconductor material having a composition formula of In _{x 1} Al _{y 1} Ga _{1 -x 1 -y 1} N (0? _{X 1 ? 1} , 0? _{Y 1 ? 1} , 0? _{X 1 + y 1 ? 1} ), for example, AlGaN, InGaN, InAlGaN, and the like, but is not limited thereto.

The light emitting structure 150 includes a through hole H1 formed in the direction of the first conductivity type semiconductor layer 120 in the second conductivity type semiconductor layer 140. [ The insulating layer 160 may be disposed on the side surface of the light emitting structure 150 and in the through hole H1. At this time, the insulating layer 160 may expose one surface of the second conductivity type semiconductor layer 140.

The first electrode pad 170 may be electrically connected to the first conductive semiconductor layer 120. Specifically, the first electrode pad 170 may be electrically connected to the first conductivity type semiconductor layer 120 through the through hole H1.

The second electrode pad 180 may be electrically connected to the second conductive semiconductor layer 140. Specifically, the second electrode pad 180 may be electrically connected to the second conductive semiconductor layer 140 through the insulating layer 160.

The first electrode pad 170 and the second electrode pad 180 may be disposed on the lower surface of the light emitting structure 150, that is, on one surface of the second conductive semiconductor layer 140. The first electrode pad 170 and the second electrode pad 180 may be formed of one selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO zinc oxide, indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni / IrOx / IrOx / Au / ITO, and the material is not limited thereto.

The first electrode pad 170 and the second electrode pad 180 may be formed of a material selected from the group consisting of In, Co, Si, Ge, Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Ti, Ag, Cr, Mo, Nb, Al, Ni, Cu, and WTi.

5 is a cross-sectional view of a light emitting device package according to a second embodiment of the present invention, and FIG. 6 is a bottom view of FIG.

5 and 6, in the light emitting device package 10 according to the embodiment, the first and second electrode pads 170 and 180 of the light emitting device 100 are connected to the lower surface 321 of the wavelength conversion layer 300, / RTI > Here, the lower surface 321 of the wavelength conversion layer may be the lower surface of the side wall 320 of the wavelength conversion layer. That is, the lower surface 321 of the wavelength conversion layer may be a surface on which the recess is formed.

As described above, the first electrode pad 170 and the second electrode pad 180 of the light emitting device 100 may be formed of In, Co, Si, Ge, Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rh, Ir, W, Ti, Ag, Cr, Mo, Nb, Al, Ni, Cu and WTi. Accordingly, the first electrode pad 170 and the second electrode pad 180 may function as a reflection layer by themselves.

A reflective layer 410 is disposed between the first and second electrode pads 170 and 180 and the light emitting structure 150 and between the first and second electrode pads 170 and 180 and the wavelength conversion layer 300 . The reflective layer 410 may be formed of any one of various reflective metals (Al, Ag, etc.).

The reflective layer 410 may be disposed on the lower surface 321 of the wavelength conversion layer 300 to reflect light upward. Therefore, the light extraction efficiency can be improved.

In addition, since the reflective layer 410, the first electrode pad 170, and the second electrode pad 180 are made of metal, a heat releasing path can be formed. As shown in FIG. 6, since the area of the electrode pad according to the embodiment increases to the region of the wavelength conversion layer 300, heat emission efficiency can be improved. In addition, since the areas of the first electrode pad 170 and the second electrode pad 180 are increased, it is possible to stably support the circuit board on mounting.

However, the present invention is not limited to this, and the first electrode pad 170 and the second electrode pad 180 may each be formed of a plurality of layers, and a part of the plurality of layers may be a reflective layer. For example, the first electrode pad 170 and the second electrode pad 180 may be formed of a multi-layered structure of Cr / Al / Ni / Au, respectively, and the Al layer may function as a reflective layer.

7 is a cross-sectional view of a light emitting device package according to a third embodiment of the present invention.

7, the light emitting device package 10 according to the embodiment may include a second reflective layer 420 disposed on a lower surface 151 of the light emitting structure 150 and a lower surface 321 of the wavelength conversion layer 300 have. The second reflective layer 420 may be formed of any one of an Omni Directional Reflector (ODR) structure, a distributed Bragg reflector (DBR) structure, and other nonconductive reflective layers.

The dispersed Bragg reflection structure includes a structure in which two dielectric layers having different refractive indices are alternately arranged. For example, any one of SiO ₂ , Si ₃ N ₄ , TiO ₂ , Al ₂ O ₃ , and MgO is referred to as . As another example, the second reflective layer 420 may be a structure in which reflective particles are dispersed in a substrate. The base material may be at least one of an epoxy resin, a silicone resin, a polyimide resin, a urea resin, and an acrylic resin. As an example, the polymer resin may be a silicone resin. Reflective particles may include particles such as TiO ₂ or SiO _2.

The first electrode pad 170 and the second electrode pad 180 may be electrically connected to the light emitting structure 150 through the second reflective layer 420. The first electrode pad 170 may be electrically connected to the first conductive semiconductor layer 120 of the light emitting structure 150 through the first hole 421 of the second reflective layer 420, The pad 180 may be electrically connected to the second conductive semiconductor layer 140 of the light emitting structure 150 through the first hole 421 of the second reflective layer 420.

8 is a cross-sectional view of a light emitting device package according to a fourth embodiment of the present invention.

Referring to FIG. 8, the third reflective layer 430 may be disposed on the lower surface of the wavelength conversion layer 300. The material of the third reflective layer 430 is not particularly limited. The third reflective layer 430 may be a conductive material or a non-conductive material such as DBR. Illustratively, the third reflective layer 430 may have a structure in which reflective particles are dispersed in a substrate. The base material may be at least one of an epoxy resin, a silicone resin, a polyimide resin, a urea resin, and an acrylic resin. As an example, the polymer resin may be a silicone resin. Reflective particles may include particles such as TiO ₂ or SiO _2.

The third reflective layer 430 may be disposed to surround the first electrode pad 170 and the second electrode pad 180. The third reflective layer 430 may be disposed on the lower surface 321 of the wavelength conversion layer 300 to reflect light upward to improve light extraction efficiency. Further, the first electrode pad 170 and the second electrode pad 180 are disposed outside the first electrode pad 170 and the second electrode pad 180, so that the first electrode pad 170 and the second electrode pad 180 can be stably supported when the circuit board is mounted.

FIG. 9 is a cross-sectional view of a light emitting device package according to a fifth embodiment of the present invention, and FIG. 10 is a plan view of FIG.

Referring to FIG. 9, first concave-convex patterns S11 and S12 may be formed on the outer surface of the wavelength conversion layer 300. FIG. According to such a concavo-convex pattern, light extraction efficiency can be improved. Although the concavo-convex pattern is shown on both the top and side surfaces of the wavelength conversion layer 300, the present invention is not limited thereto. The first concavo-convex pattern S11 may be formed only on the upper surface of the wavelength conversion layer 300, and the first concavo-convex pattern S12 may be formed only on the side surface of the wavelength conversion layer 300. [

The second concavo-convex pattern S21 may also be formed in the recess 301 of the wavelength conversion layer 300. [ The first irregular patterns S11 and S12 and the second irregular pattern S21 may be formed by the same method, but are not limited thereto. For example, both the outer surface and the inner surface of the wavelength conversion layer 300 may be surface-treated by sand blasting, but the surface roughness may be formed by different surface treatment methods. Referring to FIG. 10, the first concavo-convex pattern S11 formed on the top surface of the wavelength conversion layer 300 and the first concavo-convex pattern S12 formed on the side surface may have different periods and sizes.

FIGS. 11A to 11D are views showing steps of fabricating a light emitting device package according to an embodiment of the present invention, and FIG. 12 is a view illustrating a method of manufacturing the wavelength conversion layer of FIG. 11A.

Referring to FIG. 11A, the wavelength conversion layer 300 can be manufactured by mixing a glass powder and a phosphor and then sintering the mixture. The sintering temperature may be, but is not limited to, the temperature at which the glass begins to deform (e.g., softening point).

Thereafter, a plurality of recesses 301 can be formed in the wavelength conversion layer 300. The recess 301 may have an appropriate shape and size depending on the size of the light emitting device 100. The method of forming the recesses 301 is not particularly limited. Illustratively, the recesses 301 can be both dry etched or wet etched.

Referring to FIG. 11B, the adhesive layer 210 may be applied to the plurality of recesses 301, and the light emitting device 100 may be fixed inside the recess 301. The adhesive layer 210 is not particularly limited as long as it can adhere the light emitting device 100. Illustratively, the adhesive layer 210 may be formed of a transparent material such as silicon or epoxy.

At this time, the light emitting device 100 may be fixed to the recess 301 in a state where all the electrodes are manufactured (the structure of FIG. 1), but it is not necessarily limited thereto. The light emitting device 100 may be disposed on the recess 301 in a state where the through hole H1 is formed in the light emitting structure 150 and the insulating layer 160 is formed, that is, before the electrode pad is formed.

Referring to FIG. 11C, the electrode pad layer P1 may be formed on one surface 321 of the light emitting structure 150 and the wavelength conversion layer 300 as a whole. That is, the electrode pad layer P1 may extend to one surface P1 of the wavelength conversion layer 300. [

The electrode pad layer P1 may be electrically connected to the first conductivity type semiconductor layer 120 and the second conductivity type semiconductor layer 140 through the through hole H1 of the light emitting structure 150. [

At this time, a reflective layer (not shown) may be formed before the electrode pad layer P1 is formed. However, when the reflective layer is non-conductive such as a DBR, holes can be formed so that the electrode pad layer P1 passes through the reflective layer. And then cut along the cutting line CL1.

Referring to FIG. 11D, the plurality of light emitting device packages 10 may be separated by separating the wavelength conversion layer 300. At this time, the electrode pad layer formed on one surface of the wavelength conversion layer 300 may also be cut. The electrode pad layer may be cut along the wavelength conversion layer 300 to form the first electrode pad 170 and the second electrode pad 180. Accordingly, in the completed package, the first electrode pad 170 and the second electrode pad 180 may be extended on the lower surface of the wavelength conversion layer 300.

Referring to FIG. 12, the wavelength conversion layer 300 may be formed by compressing and sintering a plurality of sheets 300a, 300b, 300c, and 300d. In this process, the interface between the sheet and the sheet disappears and one wavelength conversion layer 300 can be formed. At this time, some of the plurality of sheets 300c and 300d may form recesses 301 by previously forming holes. However, the present invention is not limited to this, and a recess may be separately formed after stacking a plurality of sheets without a hole.

13, the vehicle lamp according to the embodiment may include a bracket 20, a light emitting device package 10 disposed on the bracket 20, and a lens 20 covering the light emitting device package 10 have. Such a vehicle lamp can be applied to various vehicle lamps such as a STOP lamp, a fog light (DRL), a turn signal lamp, and a rear lamp. Particularly, even when applied to a high output lamp to which a high current is applied, the occurrence of cracks can be improved.

However, the present invention is not limited thereto. The light emitting device package of the embodiment may further include an optical member such as a light guide plate, a prism sheet, and a diffusion sheet, and may function as a backlight unit. Further, the light emitting device package of the embodiment can be applied to a display device, a lighting device, and a pointing device.

At this time, the display device may include a bottom cover, a reflector, a light emitting module, a light guide plate, an optical sheet, a display panel, an image signal output circuit, and a color filter. The bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit.

It will be apparent to those skilled in the art that various changes, substitutions, and alterations can be made hereto without departing from the spirit and scope of the invention as defined in the appended claims. Will be apparent to those of ordinary skill in the art.

Claims (15)

A light emitting element including a first electrode pad and a second electrode pad disposed on a lower surface of the light emitting structure; And
And a wavelength conversion layer disposed on an upper surface and a side surface of the light emitting element,
Wherein the first electrode pad and the second electrode pad extend to a lower portion of the wavelength conversion layer,
Wherein the wavelength conversion layer comprises an inorganic material and the wavelength conversion particles dispersed in the inorganic material.
The method according to claim 1,
Wherein the inorganic material comprises glass.
The method according to claim 1,
Wherein the wavelength conversion layer includes a recess in which the light emitting element is disposed.
The method according to claim 1,
And an adhesive layer disposed between the light emitting element and the wavelength conversion layer.
The method according to claim 1,
And a reflective layer disposed between the first and second electrode pads and a lower portion of the wavelength conversion layer.
6. The method of claim 5,
The reflective layer extends between the first and second electrode pads and the light emitting structure,
Wherein the first electrode pad and the second electrode pad are electrically connected to the light emitting structure through the reflective layer.
The method according to claim 1,
And a light-transmitting substrate disposed on the light-emitting structure.
8. The method of claim 7,
The light-
A first conductive semiconductor layer electrically connected to the first electrode pad,
A second conductive semiconductor layer electrically connected to the second electrode pad,
And an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer.
The method of claim 3,
Wherein the wavelength conversion layer includes a first concavo-convex pattern disposed on at least a part of the outer side surface.
10. The method of claim 9,
And the wavelength conversion layer includes a second concavo-convex pattern disposed in at least a part of an inner surface of the recess.
Brackets;
A light emitting device package according to any one of claims 1 to 10 arranged on the bracket; And
And a lens covering the light emitting device package.
Fabricating a wavelength conversion layer;
Forming a plurality of recesses on one surface of the wavelength conversion layer, and disposing a light emitting structure on each of the plurality of recesses;
Forming an electrode pad on one surface of the light emitting structure; And
And separating the plurality of light emitting device packages by separating the wavelength conversion layer,
Wherein the step of forming the electrode pad extends the electrode pad from one surface of the light emitting structure to one surface of the wavelength conversion layer.
13. The method of claim 12,
Wherein the step of separating the package comprises cutting the electrode pads formed on one surface of the wavelength conversion layer together.
13. The method of claim 12,
Wherein the wavelength conversion layer comprises an inorganic material and a wavelength conversion particle dispersed in the inorganic material,
Wherein the inorganic material comprises glass.
13. The method of claim 12,
Wherein the wavelength conversion layer comprises:
A method of manufacturing a light emitting device package, the method comprising: compressing a plurality of sublayers;

Images