KR102407329B1 - Light source module and lighting apparatus - Google Patents

Abstract

A light source module according to an embodiment includes: a light emitting device including a light emitting chip and a phosphor layer on a surface of the light emitting chip; a circuit board having a first region under the light emitting chip and a concave portion around the first region; a reflector disposed on the concave portion along the periphery of the first region; and an optical lens disposed on the phosphor layer, wherein the optical lens includes an incident surface disposed on the phosphor layer and an exit surface for emitting light incident to the incident surface, and an inner portion of the reflector is the The optical lens is disposed to overlap in the vertical direction on the incident surface.

Description

Light source module and lighting device having same {LIGHT SOURCE MODULE AND LIGHTING APPARATUS}

The embodiment relates to a light source module and a lighting device having the same.

A light emitting device, for example, a light emitting diode (Light Emitting Device) is a type of semiconductor device that converts electrical energy into light, and has been spotlighted as a next-generation light source by replacing conventional fluorescent lamps and incandescent lamps.

Since light emitting diodes generate light using semiconductor elements, they consume very low power compared to incandescent lamps that generate light by heating tungsten, or fluorescent lamps that generate light by colliding ultraviolet rays generated through high-pressure discharge on phosphors. .

In addition, since the light emitting diode generates light by using the potential gap of the semiconductor device, it has a longer lifespan, faster response characteristics, and environment-friendly characteristics compared to a conventional light source.

Accordingly, many studies are being conducted to replace the existing light source with light emitting diodes, and light emitting diodes are increasingly used as light sources for lighting devices such as various lamps, liquid crystal displays, electric signs, and street lights used indoors and outdoors. have.

The embodiment provides a light source module having novel optical properties.

The embodiment provides a light source module including an optical lens on a light emitting element, and a reflector in a concave portion of a circuit board facing the incident surface of the optical lens.

The embodiment provides a light source module having a reflector that reflects light emitted through a side surface of a light emitting device to an optical lens in a concave portion lower than the upper surface of the circuit board.

The embodiment provides a light source module in which the surface of the reflector facing the incident surface of the optical lens has a concave-convex pattern.

The embodiment may improve the electrical reliability of the light source module and the light unit having the same.

A light source module according to an embodiment includes: a light emitting device including a light emitting chip and a phosphor layer on a surface of the light emitting chip; a circuit board having a first region under the light emitting chip and a concave portion around the first region; a reflector disposed on the concave portion along the periphery of the first region; and an optical lens disposed on the phosphor layer, wherein the optical lens includes an incident surface disposed on the phosphor layer and an exit surface for emitting light incident to the incident surface, and an inner portion of the reflector is the The optical lens is disposed to overlap in the vertical direction on the incident surface.

A lighting device according to an embodiment includes the light source module.

The embodiment may reduce the amount of side light loss of the light emitting device.

The embodiment may improve the light efficiency of the light source module.

In the embodiment, by arranging the concave-convex pattern around the light emitting device of the circuit board, light efficiency may be improved through total reflection or diffuse reflection with respect to side light of the light emitting device.

The embodiment may improve the reliability of a light source module and a lighting device having the same.

1 is a plan view showing a light source module according to a first embodiment.
FIG. 2 is a cross-sectional view on the AA side of the light source module of FIG. 1 .
3 is a plan view of the circuit board of FIG. 1 .
4 is a plan view of an optical lens and a light emitting device in FIG. 1 .
FIG. 5 is a bottom view of FIG. 4 .
FIG. 6 is a view showing an optical path of the light source module of FIG. 2 .
FIG. 7 is another example of a reflector on the circuit board of FIG. 3 .
8 is a plan view illustrating a light source module according to a second embodiment.
9 is a plan view of an optical lens and a light emitting device in FIG. 8 .
FIG. 10 is a bottom view of FIG. 9 .
11 is a view showing a first modified example of the reflector of the light source module according to the embodiment.
12 is a view showing a second modified example of the reflector of the light source module according to the embodiment.
13 is a view showing a third modified example of the reflector of the light source module according to the embodiment.
14 is a view showing a fourth modified example of the reflector of the light source module according to the embodiment.
15 is an exploded perspective view of an optical module according to an embodiment.
16 is a diagram illustrating a light source module according to a third embodiment.
17 is a view illustrating a lighting device in which an optical sheet is disposed on the light source module of FIG. 16 .
18 is a diagram illustrating a light emitting chip according to an embodiment.
19 is a diagram illustrating another example of a light emitting chip according to an embodiment.

Hereinafter, the embodiments will be clearly revealed through the accompanying drawings and description of the embodiments. In the description of the embodiments, each layer (film), region, pattern or structure is “on” or “under/under” the substrate, each layer (film), region, pad or pattern. In the case of being described as being “formed on”, “on” and “under/under” refer to both “directly” or “indirectly” formed through another layer. include In addition, the criteria for the upper / upper or lower / lower of each layer will be described with reference to the drawings. Also, like reference numerals denote like elements throughout the description of the drawings.

Hereinafter, a light source module according to an embodiment will be described with reference to the accompanying drawings.

1 is a plan view showing a light source module according to a first embodiment, FIG. 2 is a cross-sectional view on the A-A side of the light source module of FIG. 1, FIG. 3 is a plan view of the circuit board of FIG. 1, and FIG. 4 is an optical lens in FIG. and a plan view of the light emitting device, FIG. 5 is a bottom view of FIG. 4 , and FIG. 6 is a view showing a light path of the light source module of FIG. 2 .

1 to 6 , the light source module 100 includes a circuit board 110 , a light emitting device 150 disposed in a first region 112 on the circuit board 110 , and a light emitting device 150 on the light emitting device 150 . It includes an optical lens 190 disposed on the , a concave portion 113 around the light emitting element 150 , and a reflector 121 on the concave portion 113 .

The light emitting device 150 includes a light emitting chip 151 disposed in the first region 112 of the circuit board 110 and a phosphor layer 153 disposed on the light emitting chip 151 .

The circuit board 110 may include a resin-based printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, and an FR-4 board. The circuit board 110 may include a printed circuit board having a metal layer therein.

The circuit board 110 may include a plurality of pads 115 and 117 , and the plurality of pads 115 and 117 are disposed on the circuit board 110 , supply power to the light emitting chip 151 , and emit the light. The heat generated from the chip 151 is dissipated.

The plurality of pads 115 and 117 may be electrically connected to the light emitting chip 151 by a wiring layer in the circuit board 110 . The pads 115 and 117 may be defined as first and second pads 115 and 117 , and include titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), and tantalum (Ta). ), platinum (Pt), tin (Sn), silver (Ag), and phosphorus (P) may be formed of at least one or a selective alloy thereof, and may be formed as a single layer or multiple layers.

The circuit board 110 includes, for example, a body made of a conductive material. The body of the conductive material may include a silicon material, and may include n-type impurities or p-type impurities therein. When the circuit board 110 is made of a conductive material, an insulating layer may be further disposed on the surface, but the present invention is not limited thereto.

1 to 3 , the circuit board 110 includes a first region 112 in which the light emitting device 150 is disposed and a concave portion 113 around the first region 112 . The reflector 121 may be disposed in the concave portion 113 and may be disposed lower than the upper surface 111 of the circuit board 110 .

The first region 112 may be disposed to be lower than the upper surface 111 of the circuit board 110 . When the top surface of the first region 112 is disposed lower than the top surface 111 of the circuit board 110 , the top surface height of the light emitting device 150 disposed on the first region 112 is also lowered. , it is possible to reduce side light loss of the light emitting device 150 .

The upper surface of the first region 112 may be lower than the upper surface 111 of the circuit board 110 and higher than the bottom of the concave portion 113 . Accordingly, the side surface of the light emitting device 150 disposed on the first region 112 may face the outer side wall of the concave portion 113 , thereby reducing side light loss of the light emitting device 150 . have.

A bottom of the concave portion 113 may be depressed lower than an upper surface of the first region 112 . The bottom of the concave portion 113 may be formed of a flat surface or a rough surface. A depth T3 of the concave portion 113 may be 2 μm or more, for example, 3 μm or more from the first region 112 . When the depth of the concave portion 113 is less than 2 μm, the light reflection effect by the reflector 121 may be insignificant.

Since the bottom of the concave portion 113 is disposed lower than the upper surface of the first region 112 , when the reflector 121 is disposed on the concave portion 113 , incident light may be effectively reflected. .

The concave portion 113 may be disposed along the circumference of the light emitting device 150 , that is, the circumference of the first region 112 . 3 , the top view shape of the first region 112 may be a polygonal shape, and the outer shape of the concave portion 113 may be a circular shape.

Among the surfaces of the concave portion 113 , an inner portion may overlap the incident surface 191 of the optical lens 190 in a vertical direction, and an outer portion may be an edge of the incident surface 191 of the optical lens 190 . ) can be arranged further outside.

A bottom width D4 of the concave portion 113 may be wider than a width D5 of a region of the incident surface 191 of the optical lens 190 that does not contact the phosphor layer 153 .

The first region 112 of the circuit board 110 may have a width D3 that is narrower than the width D2 of the phosphor layer 153, and may have an area equal to or greater than an area of the lower surface of the light emitting device 150. have. When the width D3 of the first region 112 is greater than or equal to the width of the phosphor layer 153 , the light emitting device 150 having the phosphor layer 153 may be effectively fixed.

Here, the lower surface of the phosphor layer 153 may be spaced apart from the surface of the first region 112 . In this case, the bonding member 119 may be disposed between the light emitting chip 151 and the pads 115 and 117 of the first region 112 , so that the lower surface of the phosphor layer 153 is the first region 112 . may be spaced apart from the surface.

The width D1 of the concave portion 113 may be greater than 100% of the width D2 of the incident surface 191 of the optical lens 190, for example, in the range of 103% to 107%. When the width D1 of the concave portion 113 is 100% or less than the width D2 of the incident surface 191 of the optical lens 190, the effect of improving the light efficiency through the reflector 121 is insignificant. When the width D1 of the concave portion 113 exceeds the above range compared to the width D2 of the incident surface 191 of the optical lens 190, there is a problem in that loss or interference light is increased. can be

The inner portion of the reflector 121 is a region adjacent to the first region 112 , and overlaps the incident surface 191 of the optical lens 190 in a vertical direction, and the outer region is an incident surface of the optical lens 190 . It may not overlap in the direction perpendicular to the surface.

The reflector 121 disposed in the concave portion 113 may be formed of a material different from that of the circuit board 110 . The reflector 121 may be formed of a reflective material made of a resin material, and as another example, a reflective material made of a non-metal or metallic material, or a reflective material made of a conductive or insulating material. The reflector 121 may include, for example, a metal oxide such as TiO ₂ , SiO ₂ , Al ₂ O ₃ . The metal oxide may be added into a resin material such as silicone or epoxy.

The reflector 121 may be disposed lower than a top surface of the light emitting chip 151 . The surface A1 of the reflector 121 includes a concave-convex pattern, and the light incident through the side surface of the light emitting element 150 or the incident surface 191 of the optical lens 190 is transmitted to the optical lens 190 . is reflected back in the direction of the incident plane of

The concave-convex pattern of the surface A1 of the reflector 121 may have a structure in which concave and convex patterns are alternately arranged. A plurality of the iron patterns may be arranged at regular or irregular intervals as shown in FIGS. 1 and 3 . The side cross-sectional shape of the iron pattern may be a polygonal pyramid shape, a polygonal pyramid-to-corner shape, a conical shape, or a cone-to-cone shape, but is not limited thereto. The lower width of the iron pattern may be different from the height of the iron pattern, for example, the height of the iron pattern may be greater than the lower width of the iron pattern. Accordingly, the density of the iron pattern may be increased, and light reflection efficiency may be increased by the height of the iron pattern. The iron pattern of the reflector 121 may be provided as a surface inclined with respect to the side surface of the light emitting device 150 .

In the concave-convex pattern of the reflector 121 , the height of the convex pattern may be 7 µm or less, for example, 3 µm to 5 µm, and when the height of the convex pattern exceeds the above range, Since it may protrude higher than the position, improvement in light efficiency may be insignificant, and when it is less than the above range, a rate at which the reflected light is re-incident to the incident surface 191 of the optical lens 190 may be reduced.

The surface A1 of the reflector 121 may be disposed lower than the position of the active layer in the light emitting chip 151 to reflect light leaking laterally through the active layer as much as possible. Accordingly, the iron pattern may reflect the light emitted through the side surface of the light emitting device 150 in the direction of the incident surface of the optical lens 190 . Accordingly, the light efficiency of the light source module 100 may be improved.

2 , an adhesive layer 131 may be disposed between the reflector 121 and the bottom of the concave portion 113 , and the adhesive layer 131 may be an adhesive made of a resin material such as silicone or epoxy. The adhesive layer 131 may attach the reflector 121 to the concave portion 113 . The lower surface of the reflector 121 may be a flat surface or a rough surface, but is not limited thereto.

A region between the reflector 121 and the incident surface 191 of the optical lens 190 may be an air gap region, but is not limited thereto.

The light emitting chip 151 may be bonded to the first and second pads 115 and 117 disposed in the first region 112 of the circuit board 110 by a bonding member 119 . Since the light emitting chip 151 is disposed on the circuit board 110 in a flip chip method, most of the light emitted from the light emitting chip 151 is emitted in an upward direction.

The light emitting chip 151 emits ultraviolet, blue, green, or red light. A phosphor layer 153 may be disposed on the surface of the light emitting chip 151 . The phosphor layer 153 may be disposed on top and side surfaces of the light emitting chip 151 . Accordingly, some light emitted through the top and side surfaces of the light emitting chip 151 may be wavelength-converted by the phosphor layer 153 . The light emitting device 150 may emit red, green, blue, or white light, but is not limited thereto.

In the phosphor layer 153, a phosphor is added in a light-transmitting resin material. The light-transmitting resin material may include a material such as silicone or epoxy, and the phosphor may be selectively formed from among YAG, TAG, Silicate, Nitride, and Oxy-nitride-based materials. The phosphor may include at least one of a red phosphor, a yellow phosphor, and a green phosphor, or different kinds of phosphors.

The phosphor layer 153 may include different phosphor layers. In the different phosphor layers, a first layer is any one of red, yellow, and green phosphor layers, and a second layer is formed on the first layer. and may be formed of a phosphor layer different from that of the first layer.

The optical lens 190 controls the directivity of the light emitted from the light emitting chip 151 . The optical lens 190 may adjust the light directing characteristic by the emitting surface 193 opposite to the incident surface 191 .

The incident surface 191 of the optical lens 190 is disposed on the light emitting device 150 , for example, the phosphor layer 153 to receive light emitted from the light emitting device 150 and the reflector 121 . do. The incident surface 191 may be formed as a rough surface for incident efficiency, but is not limited thereto.

The distance T1 between the horizontal straight line of the incident surface 191 of the optical lens 190 and the upper surface 111 of the circuit board 110 may be smaller than the thickness T3 of the light emitting device 150 . . This may prevent the incident surface 191 of the optical lens 190 from being spaced apart from each other by the thickness T3 or more of the light emitting device 150 by the first region 112 .

The incident surface 191 of the optical lens 190 is disposed adjacent to the upper surface 111 of the circuit board 110 rather than the first region 112 , and the upper surface 111 of the circuit board 110 and the Light lost through the area between the incident surfaces 191 of the optical lens 190 may be reduced.

The emitting surface 193 of the optical lens 190 has a hemispherical shape and refracts incident light. The center region of the emission surface 193 may include a convex spherical surface or a concave spherical surface, but is not limited thereto.

4 and 5 , the top view shape of the light emitting chip 151 may be a polygonal shape, for example, a square shape, and the outer shape of the phosphor layer 153 may be a polygonal shape, for example, a square shape. The optical lens The top view (top view) shape and the bottom view (bottom view) shape of 190 may be a circular shape.

The incident surface 191 of the optical lens 190 has an area larger than the upper surface area of the phosphor layer 153, so that light leaked through the upper surface and side surfaces of the phosphor layer 153 can be received as much as possible. .

The light emitting chip 151 may have first and second lead electrodes 211 and 213 disposed thereunder, and may be bonded to the first and second pads 115 and 117 of the circuit board 110 in a flip-chip manner.

As shown in FIG. 6 , the light emitted to the side of the light emitting device 150 is reflected by the surface A1 of the reflector 121 , that is, the surface of the concave-convex pattern to be incident on the incident surface of the optical lens 190 . have. Accordingly, the light efficiency of the light source module may be improved.

7 is another example of the shape of the reflector 121 according to the embodiment. Referring to FIG. 7 , the convex and convex pattern of the reflector 121A may be arranged in a ring shape around the light emitting device 150 . The iron pattern may be arranged in a concentric circle shape with respect to the center of the light emitting device 150 , thereby improving light reflection efficiency by the reflector 121A. The ring shape may be a continuously connected ring shape or a discontinuous ring shape, but is not limited thereto.

8 is a view showing a light source module according to a second embodiment, and FIGS. 9 and 10 are plan and bottom views of the optical lens and the light emitting device of FIG. 8 . In the description of the second embodiment, the same parts as in the first embodiment will be referred to the description of the first embodiment.

8 to 10 , the light source module includes a circuit board 110 , a light emitting device 150 disposed on the first region 112 on the circuit board 110 , and a light emitting device disposed on the light emitting device 150 . It includes an optical lens 190 , a concave portion 113 disposed lower than the first region 112 around the light emitting device 150 , and a reflector 121A on the concave portion 113 .

The light emitting device 150 includes a light emitting chip 151A disposed in the first region 112 of the circuit board 110 and a phosphor layer 153A disposed on the light emitting chip 151A.

The circuit board 110 may include a bonding part 118 in an area adjacent to the first area 112 . The bonding part 118 may be disposed under the concave part 113 and the incident surface 191 of the optical lens 190 . The bonding part 118 may be connected to the light emitting chip 151 of the light emitting device 150 by a wire 118A. The light emitting chip 151 may have a vertical chip structure in which two electrodes are disposed on opposite sides of each other. In the vertical chip, a lower portion of the light emitting chip 151 is bonded to the first region 112 , and the An upper portion of the light emitting chip 151 may be connected to the bonding portion 118 with a wire 118A.

The iron pattern of the reflector 121 may have a ring shape on the concave part 113 and may be arranged in a concentric circle shape. As another example, a plurality of iron patterns may be densely arranged in the reflector 121 , but the present disclosure is not limited thereto.

9 , the incident surface 191 of the light source lens 190 and the outer shape of the phosphor layer 153 may have a circular shape, and the light emitting chip 151 may have a polygonal shape. Since the phosphor layer 153 is disposed in a circular shape, the side thickness of the phosphor layer 153 may be increased toward the center of each side of the light emitting chip 151 .

10 , a conductive support member 56 is disposed below the light emitting device 150 , that is, under the light emitting chip 151 , and may be electrically connected to the first region 112 of the circuit board 110 . . Since the light emitting chip 151 is provided with the conductive support member 56, heat dissipation efficiency can be improved.

11 to 14 are views showing modified examples of the reflector according to the embodiment.

Referring to FIG. 11 , on the surface B1 of the reflector 121B, the convex and convex patterns may be arranged to have different heights. The reflector 121B may gradually increase in thickness as it moves away from the light emitting device 150 . The height of the iron pattern of the reflector 121B may gradually increase as the distance from the light emitting device 150 increases. The reflector 121B may effectively reflect the light emitted to the side surface of the light emitting device 150 by the iron patterns having different heights to the incident surface of the optical lens 190 .

The height of the iron pattern on the outer side of the reflector 121B may protrude higher than the upper surface of the first region 112 , but the present invention is not limited thereto.

Referring to FIG. 12 , the surface C1 of the reflector 121C may include a curved surface. The surface C1 may include a curved surface having a plurality of inflection points, and the curvature of the curved surface may gradually decrease as the distance from the light emitting device 150 increases. Accordingly, the light emitted through the side surface of the light emitting device 150 may be reflected to the incident surface of the optical lens 190 . A fine concavo-convex pattern C2 is formed on the surface of the reflector 121 to effectively reflect light.

The reflector 121C may have a smaller thickness in a region adjacent to the first region 112 and may gradually increase in thickness as it moves away from the first region 112 . The outer portion of the reflector 121C may protrude at the same height as the top surface of the circuit board 110 , thereby reducing light loss due to the outer wall of the concave portion 113 .

Referring to FIG. 13 , the surface D1 of the reflector 121D may include an inclined surface. The reflector 121D may gradually increase in thickness as it moves away from the light emitting device 150 . A concave-convex pattern D2 is formed on the inclined surface D1 of the reflector 121D to reflect the light emitted from the side surface of the light emitting device 150 in the direction of the incident surface of the optical lens 190 .

The outer portion of the reflector 121D may have the same thickness as the top surface of the circuit board 110 , but is not limited thereto.

Referring to FIG. 14 , the reflector 121E may include an inclined inner region E1 and an outer region E2 having an uneven pattern. The inner region E1 provides an inclined surface with respect to the side surface of the light emitting element 150 to reflect the light emitted through the side surface of the light emitting element 150 in the direction of the incident surface of the optical lens 190 can give The outer region E2 of the reflector 121E may be formed in a concave-convex pattern to re-reflect light leaked through the incident surface 191 of the optical lens 190 . The upper surface height of the outer region E2 may be the same height as the upper surface height of the circuit board 110 or may be disposed closer to the incident surface 191 of the optical lens 190 to reduce side light loss.

15 is a view for explaining a process of assembling a light source module according to an embodiment.

15 , the first region 112 on the circuit board 110 is formed to have a predetermined depth D5 from the upper surface 111 , and a recess 113 is formed around the first region 112 . formed, and the reflector 121 is adhered to the concave portion 113 with an adhesive layer. The light emitting chip 151 of the light emitting device 150 is bonded to the pads 115 and 117 on the first region 112 using a bonding member. Here, the optical lens 190 may be adhered after disposing the light emitting device 150 on the circuit board 110 , and may be adhered before disposing the light emitting device 150 on the circuit board 110 , , but is not limited thereto.

Referring to FIG. 16 , a plurality of first regions 112 are disposed on the circuit board 110 , and a light emitting device 150 is disposed on the first region 112 , respectively. The distance F1 between the light emitting devices 150 may vary depending on the optical characteristics and optical efficiency of the optical lens 190 and may be arranged at intervals to minimize optical interference between adjacent light emitting devices 150 .

The concave portion 113 is disposed on the periphery of the light emitting device 150 , and the reflector 121 is disposed within the recess 113 to transmit the light emitted to the side surface of the light emitting device 150 to the optical lens 190 . ) can be reflected in the direction of the incident surface. By reflecting the side leakage light of the light emitting device 150 by the reflector 121 , light interference between adjacent light emitting devices 150 may be reduced.

Referring to FIG. 17 , in the lighting device, an optical sheet 141 may be disposed on the light source module 100 including the plurality of light emitting devices 150 . The optical sheet 141 may provide the light emitted through the optical lens 190 of the light source module as a surface light source to the display panel.

The optical sheet 141 may include at least one of a light guide plate, a prism sheet, and a diffusion sheet, but is not limited thereto.

By disposing a reflector 121 in the concave portion 113 on the circuit board 110 to reflect the light emitted from the side surface of the light emitting device 150 in the direction of the optical sheet, between adjacent light emitting devices 150 . It can reduce optical interference. In addition, as the efficiency of the light emitted from the optical lens 190 is improved, the distance between the circuit board 110 and the optical sheet 141 may be reduced, and the thickness of the backlight unit may be reduced.

18 is a diagram illustrating an example of a light emitting chip according to an embodiment. The light emitting chip of FIG. 18 may be the light emitting chip applied to the first embodiment, but is not limited thereto.

Referring to FIG. 18 , the light emitting chip 151 includes a light emitting structure 225 and a plurality of electrodes 21 and 23 . The light emitting structure 225 may be formed of a compound semiconductor layer of a group II to group VI element, for example, a compound semiconductor layer of a group III-V element or a compound semiconductor layer of a group II-VI element. The plurality of electrodes 21 and 23 are selectively connected to the semiconductor layer of the light emitting structure 225 and supply power.

The light emitting chip may include a substrate 221 . The substrate 221 is disposed on the light emitting structure 225 . The substrate 221 may be, for example, a light-transmitting, insulating substrate, or a conductive substrate. The substrate 221 may include, for example, at least one of sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, and Ga ₂ O ₃ . A plurality of convex portions (not shown) may be formed on at least one or both of the top surface and the bottom surface of the substrate 221 to improve light extraction efficiency. A side cross-sectional shape of each convex portion may include at least one of a hemispherical shape, a semi-elliptical shape, and a polygonal shape. The substrate 221 may be removed, but is not limited thereto.

The light emitting chip 151 may include at least one of a buffer layer (not shown) and an undoped semiconductor layer (not shown) between the substrate 221 and the light emitting structure 225 . The buffer layer is a layer for alleviating a difference in lattice constant between the substrate 221 and the semiconductor layer, and may be selectively formed from group II to group VI compound semiconductors. An undoped group III-V compound semiconductor layer may be further formed under the buffer layer, but is not limited thereto. The substrate 221 may be removed. When the substrate 221 is removed, the phosphor layer 61 may be in contact with an upper surface of the first conductive semiconductor layer 222 or an upper surface of another semiconductor layer.

The light emitting structure 225 may be disposed under the substrate 221 , and includes a first conductivity type semiconductor layer 222 , an active layer 223 , and a second conductivity type semiconductor layer 224 . Another semiconductor layer may be further disposed on at least one above and below each of the layers 222 , 223 , and 224 , but the present disclosure is not limited thereto.

The first conductivity type semiconductor layer 222 is disposed under the substrate 221 , and may be implemented as a semiconductor doped with a first conductivity type dopant, for example, an n-type semiconductor layer. The first conductivity type semiconductor layer 222 includes a compositional formula of In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). The first conductive semiconductor layer 222 may be selected from a group III-V element compound semiconductor, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. . The first conductivity-type dopant is an n-type dopant, and includes dopants such as Si, Ge, Sn, Se, and Te.

The active layer 223 is disposed under the first conductivity type semiconductor layer 222 and selectively includes a single quantum well, a multiple quantum well (MQW), a quantum wire structure, or a quantum dot structure. and includes the cycle of the well layer and the barrier layer. The period of the well layer/barrier layer is, for example, InGaN/GaN, GaN/AlGaN, AlGaN/AlGaN, InGaN/AlGaN, InGaN/InGaN, AlGaAs/GaA, InGaAs/GaAs, InGaP/GaP, AlInGaP/InGaP, InP/GaAs contains at least one of the pairs of

The second conductive semiconductor layer 224 is disposed under the active layer 223 . The second conductivity type semiconductor layer 224 is a semiconductor doped with a second conductivity type dopant, for example, In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1, 0≤x+y≤ 1) contains the composition formula. The second conductive semiconductor layer 224 may be formed of at least one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. The second conductivity-type semiconductor layer 224 is a p-type semiconductor layer, and the first conductivity-type dopant is a p-type dopant and may include Mg, Zn, Ca, Sr, and Ba.

As another example of the light emitting structure 225 , the first conductivity-type semiconductor layer 222 may be implemented as a p-type semiconductor layer, and the second conductivity-type semiconductor layer 224 may be implemented as an n-type semiconductor layer. A third conductivity type semiconductor layer having a polarity opposite to that of the second conductivity type semiconductor layer may be formed under the second conductivity type semiconductor layer 224 . In addition, the light emitting structure 225 may be implemented as any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.

The first and second electrodes 21 and 23 are disposed on the lower portion of the light emitting chip 151 . The first electrode 21 is electrically connected to the first conductive semiconductor layer 222 , and the second electrode 23 is electrically connected to the second conductive semiconductor layer 224 . The first and second electrodes 21 and 23 may have a polygonal or circular bottom shape.

The light emitting chip 151 includes first and second electrode layers 241,242 , a third electrode layer 243 , and insulating layers 231,233 . Each of the first and second electrode layers 241,242 may be formed as a single layer or multiple layers, and may function as a current diffusion layer. The first and second electrode layers 241,242 may include a first electrode layer 241 disposed under the light emitting structure 225; and a second electrode layer 242 disposed under the first electrode layer 241 . The first electrode layer 241 diffuses the current, and the second electrode layer 241 reflects the incident light.

The first and second electrode layers 241,242 may be formed of different materials. The first electrode layer 241 may be formed of a light-transmitting material, for example, a metal oxide or a metal nitride.

The first electrode layer 241 is, for example, indium tin oxide (ITO), ITO nitride (ITON), indium zinc oxide (IZO), IZO nitride (IZON), indium zinc tin oxide (IZTO), or indium aluminum zinc oxide (IAZO). , indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), and gallium zinc oxide (GZO).

The second electrode layer 242 may be in contact with a lower surface of the first electrode layer 241 and function as a reflective electrode layer. The second electrode layer 242 includes a metal, for example, Ag, Au, or Al. The second electrode layer 242 may partially contact the lower surface of the light emitting structure 225 when a portion of the first electrode layer 241 is removed.

As another example, the structure of the first and second electrode layers 241,242 may be stacked in an omni directional reflector layer (ODR) structure. The non-directional reflective structure may be formed of a stacked structure of a first electrode layer 241 having a low refractive index and a second electrode layer 242 made of a highly reflective metal material in contact with the first electrode layer 241 . The electrode layers 241,242 may have, for example, a stacked structure of ITO/Ag. The omnidirectional reflection angle at the interface between the first electrode layer 241 and the second electrode layer 242 may be improved.

As another example, the second electrode layer 242 may be removed, and may be formed of a reflective layer of a different material. The reflective layer may be formed of a distributed bragg reflector (DBR) structure, wherein the distributed Bragg reflector structure includes a structure in which two dielectric layers having different refractive indices are alternately disposed, for example, a SiO ₂ layer , Si ₃ N ₄ layer, TiO ₂ layer, Al ₂ O ₃ layer, and may include a different one of the MgO layer, respectively. As another example, the electrode layers 241,242 may include both a distributed Bragg reflective structure and a non-directional reflective structure, and in this case, a light emitting chip having a light reflectance of 98% or more may be provided. The light emitting chip mounted in the flip method emits light reflected from the second electrode layer 242 through the substrate 221 , so that most of the light may be emitted in the vertical direction.

The light emitted to the side surface of the light emitting chip 151 may be reflected to the light emission area by the reflective member according to the embodiment.

The third electrode layer 243 is disposed under the second electrode layer 242 and is electrically insulated from the first and second electrode layers 241,242 . The third electrode layer 243 may be formed of a metal, for example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), or tin (Sn). ), silver (Ag), and phosphorus (P). A first electrode 21 and a second electrode 23 are disposed under the third electrode layer 243 .

The insulating layer 231,233 blocks unnecessary contact between the layers of the first and second electrode layers 241,242 , the third electrode layer 243 , the first and second electrodes 21 and 23 , and the light emitting structure 225 . . The insulating layers 231,233 include first and second insulating layers 231,233. The first insulating layer 231 is disposed between the third electrode layer 243 and the second electrode layer 242 . The second insulating layer 233 is disposed between the third electrode layer 243 and the first and second electrodes 21 and 23 .

The third electrode layer 243 is connected to the first conductive semiconductor layer 222 . The connection part 244 of the third electrode layer 243 protrudes into a via structure through the lower portions of the first and second electrode layers 241 and 242 and the light emitting structure 225 and is in contact with the first conductive semiconductor layer 222 . do. The connection part 244 may be disposed in plurality. A portion 232 of the first insulating layer 231 extends around the connecting portion 244 of the third electrode layer 243 to include a third electrode layer 243, the first and second electrode layers 241,242, An electrical connection between the second conductive semiconductor layer 224 and the active layer 223 is cut off. An insulating layer may be disposed on a side surface of the light emitting structure 225 to protect the side surface, but is not limited thereto.

The second electrode 23 is disposed under the second insulating layer 233 and makes contact with at least one of the first and second electrode layers 241 and 242 through an open region of the second insulating layer 233 . or connected The first electrode 21 is disposed under the second insulating layer 233 and is connected to the third electrode layer 243 through an open region of the second insulating layer 233 . Accordingly, the protrusion 248 of the second electrode 23 is electrically connected to the second conductive semiconductor layer 224 through the first and second electrode layers 241,242, and the protrusion 246 of the first electrode 21 ) is electrically connected to the first conductivity type semiconductor layer 222 through the third electrode layer 243 .

19 is another example of a light emitting chip according to an embodiment. The light emitting chip of FIG. 19 may be the light emitting chip applied to the second embodiment, but is not limited thereto.

Referring to FIG. 19 , the light emitting chip 151A includes a light emitting structure 10 having a plurality of semiconductor layers 11 , 12 , and 13 , a first electrode layer 20 under the light emitting structure 10 , and the first electrode layer A second electrode layer 50 under (20), an insulating layer 41 between the first and second electrode layers 20 and 50, and a pad 25 may be included.

The light emitting structure 10 may include a first semiconductor layer 11 , an active layer 12 , and a second semiconductor layer 13 . The active layer 12 may be disposed between the first semiconductor layer 11 and the second semiconductor layer 13 . The active layer 12 may be disposed under the first semiconductor layer 11 , and the second semiconductor layer 13 may be disposed under the active layer 12 .

For example, the first semiconductor layer 11 includes an n-type semiconductor layer to which a first conductivity-type dopant, for example, an n-type dopant is added, and the second semiconductor layer 13 includes a second conductivity-type dopant, for example, p It may include a p-type semiconductor layer to which a type dopant is added. Alternatively, the first semiconductor layer 11 may be formed of a p-type semiconductor layer, and the second semiconductor layer 13 may be formed of an n-type semiconductor layer.

The upper surface of the first semiconductor layer 11 may be formed of a rough uneven portion 11A, and the uneven surface 11A may improve light extraction efficiency. A side cross-section of the concave-convex surface 11A may have a polygonal shape or a hemispherical shape.

The first electrode layer 20 is disposed between the light emitting structure 10 and the second electrode layer 50 , is electrically connected to the second semiconductor layer 13 of the light emitting structure 10 , and the second electrode layer (50) and electrically insulated. The first electrode layer 20 includes a first contact layer 15, a reflective layer 17 and a capping layer 19, and the first contact layer 15 includes the reflective layer 17 and a second semiconductor layer ( 13), and the reflective layer 17 is disposed between the first contact layer 15 and the capping layer 19 . The first contact layer 15 , the reflective layer 17 , and the capping layer 19 may be formed of different conductive materials, but are not limited thereto.

The first contact layer 15 may be in contact with the second semiconductor layer 13 , and for example, an ohmic contact may be formed with the second semiconductor layer 13 . The first contact layer 15 may be formed of, for example, a conductive oxide film, a conductive nitride, or a metal. The first contact layer 15 is, for example, ITO (Indium Tin Oxide), ITON (ITO Nitride), IZO (Indium Zinc Oxide), IZON (IZO Nitride), AZO (Aluminum Zinc Oxide), AGZO (Aluminum Gallium Zinc Oxide) ), IZTO(Indium Zinc Tin Oxide), IAZO(Indium Aluminum Zinc Oxide), IGZO(Indium Gallium Zinc Oxide), IGTO(Indium Gallium Tin Oxide), ATO(Antimony Tin Oxide), GZO(Gallium Zinc Oxide), GZO(Gallium Zinc Oxide) IZO Nitride), ZnO, IrOx, RuOx, NiO, Pt, Ag, may be formed of at least one of Ti.

The reflective layer 17 may be electrically connected to the first contact layer 15 and the capping layer 19 . The reflective layer 17 may serve to increase the amount of light extracted to the outside by reflecting the light incident from the light emitting structure 10 .

The reflective layer 17 may be formed of a metal having a light reflectance of 70% or more. For example, the reflective layer 17 may be formed of a metal or alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf. In addition, the reflective layer 17 and the metal or alloy and ITO (Indium-Tin-Oxide), IZO (Indium-Zinc-Oxide), IZTO (Indium-Zinc-Tin-Oxide), IAZO (Indium-Aluminum-Zinc-) Oxide), IGZO (Indium-Gallium-Zinc-Oxide), IGTO (Indium-Gallium-Tin-Oxide), AZO (Aluminum-Zinc-Oxide), ATO (Antimony-Tin-Oxide), etc. It may be formed in multiple layers. For example, in an embodiment, the reflective layer 17 may include at least one of Ag, Al, an Ag-Pd-Cu alloy, or an Ag-Cu alloy. For example, the reflective layer 17 may be formed of an Ag layer and a Ni layer alternately, and may include Ni/Ag/Ni, a Ti layer, or a Pt layer. As another example, the first contact layer 15 may be formed under the reflective layer 17 , and at least a portion may pass through the reflective layer 17 to contact the second semiconductor layer 13 . As another example, the reflective layer 17 may be disposed under the first contact layer 15 , and a portion may pass through the first contact layer 15 to contact the second semiconductor layer 13 . .

The light emitting chip according to the embodiment may include a capping layer 19 disposed under the reflective layer 17 . The capping layer 19 is in contact with the lower surface of the reflective layer 17 , and the contact part 34 is coupled to the pad 25 , and functions as a wiring layer that transmits power supplied from the pad 25 . The capping layer 19 may be formed of a metal, for example, may include at least one of Au, Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo materials.

The contact portion 34 of the capping layer 19 is disposed in an area that does not vertically overlap the light emitting structure 10 and vertically overlaps the pad 25 . The contact portion 34 of the capping layer 19 is disposed in a region that does not vertically overlap the first contact layer 15 and the reflective layer 17 . The contact portion 34 of the capping layer 19 may be disposed at a lower position than the light emitting structure 10 and may be in direct contact with the pad 25 .

The pad 25 may be formed of a single layer or multiple layers, and the single layer may be made of Au, and in the case of a multilayer, it may include at least two of Ti, Ag, Cu, and Au. Here, in the case of a multi-layer structure, it may be a Ti/Ag/Cu/Au stacked structure or a Ti/Cu/Au stacked structure. At least one of the reflective layer 17 and the first contact layer 15 may be in direct contact with the pad 25 , but is not limited thereto.

The pad 25 may be disposed in the area A1 between the outer sidewall of the first electrode layer 20 and the light emitting structure 10 . The protective layer 30 and the light-transmitting layer 45 may contact the periphery of the pad 25 .

The protective layer 30 is disposed on the lower surface of the light emitting structure 10 , and may be in contact with the lower surface of the second semiconductor layer 13 and the first contact layer 15 , and may be in contact with the reflective layer 17 . can be

An inner portion of the protective layer 30 that vertically overlaps with the light emitting structure 10 may be disposed to vertically overlap with the region of the protrusion 16 . The outer portion of the protective layer 30 extends over the contact portion 34 of the capping layer 19 and is disposed to vertically overlap the contact portion 34 . The outer portion of the protective layer 30 may be in contact with the pad 25 , for example, may be disposed on a peripheral surface of the pad 25 .

The inner portion of the protective layer 30 is disposed between the light emitting structure 10 and the first electrode layer 20 , and the outer portion is disposed between the light transmitting layer 45 and the contact portion 34 of the capping layer 19 . can be The outer portion of the protective layer 30 may extend to an area outside the sidewall of the light emitting structure 10 to prevent moisture from penetrating.

The protective layer 30 may be defined as a channel layer, a low refractive material, or an isolation layer. The protective layer 30 may be implemented with an insulating material, for example, it may be implemented with an oxide or nitride. For example, the protective layer 30 is at least one from the group consisting of SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, and the like. may be selected and formed. The protective layer 30 may be formed of a transparent material.

The light emitting chip according to the embodiment may include an insulating layer 41 electrically insulating the first electrode layer 20 and the second electrode layer 50 . The insulating layer 41 may be disposed between the first electrode layer 20 and the second electrode layer 50 . An upper portion of the insulating layer 41 may be in contact with the passivation layer 30 . The insulating layer 41 may be formed of, for example, oxide or nitride. For example, the insulating layer 41 is at least one from the group consisting of SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, and the like. may be selected and formed.

The insulating layer 41 may be formed to a thickness of, for example, 100 nm to 2000 nm. When the thickness of the insulating layer 41 is formed to be less than 100 nm, a problem may occur in insulating properties, and when the thickness of the insulating layer 41 is formed to exceed 2000 nm, cracks may occur in a post-processing step have. The insulating layer 41 is in contact with the lower surface of the first electrode layer 20 and the upper surface of the second electrode layer 50 , and includes the protective layer 30 , the capping layer 19 , the contact layer 15 , and the reflective layer. (17) It may be formed to be thicker than each thickness.

The second electrode layer 50 includes a diffusion barrier layer 52 disposed under the insulating layer 41 , a bonding layer 54 disposed under the diffusion barrier layer 52 , and a bonding layer 54 disposed below the diffusion barrier layer 52 . It may include a conductive support member 56 , and may be electrically connected to the first semiconductor layer 11 . In addition, the second electrode layer 50 selectively includes one or two of the diffusion barrier layer 52 , the bonding layer 54 , and the conductive support member 56 , and the diffusion barrier layer 52 or At least one of the bonding layers 54 may not be formed.

The diffusion barrier layer 52 may include at least one of Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo materials. The diffusion barrier layer 52 may function as a diffusion barrier layer between the insulating layer 41 and the bonding layer 54 . The diffusion barrier layer 52 may be electrically connected to the bonding layer 54 and the conductive support member 56 , and may be electrically connected to the first semiconductor layer 11 .

The diffusion barrier layer 52 may function to prevent the material included in the bonding layer 54 from being diffused in the direction of the reflective layer 17 in the process in which the bonding layer 54 is provided. The diffusion barrier layer 52 may prevent a material such as tin (Sn) included in the bonding layer 54 from affecting the reflective layer 17 .

The bonding layer 54 includes a barrier metal or a bonding metal, for example, at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, or Ta. may include The conductive support member 56 may support the light emitting structure 10 according to an embodiment and perform a heat dissipation function. The bonding layer 54 may include a seed layer.

The conductive support member 56 is a metal or carrier substrate, for example, Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu-W or a semiconductor substrate implanted with impurities (eg, Si, Ge) , GaN, GaAs, ZnO, SiC, SiGe, etc.) may be formed of at least one. The conductive support member 56 is a layer for supporting the light emitting device 100 , and the thickness thereof is 80% or more of the thickness of the second electrode layer 50 , and may be formed to be 30 μm or more.

Meanwhile, the second contact layer 33 is disposed inside the first semiconductor layer 11 and is in contact with the first semiconductor layer 11 . The upper surface of the second contact layer 33 may be disposed above the lower surface of the first semiconductor layer 11 , and electrically connected to the first semiconductor layer 11 , and the active layer 12 and the second semiconductor layer It is insulated from the layer 13 .

The second contact layer 33 may be electrically connected to the second electrode layer 50 . The second contact layer 33 may be disposed through the first electrode layer 20 , the active layer 12 , and the second semiconductor layer 15 . The second contact layer 33 is disposed in a recess 2 disposed in the light emitting structure 10 , and is disposed in the active layer 12 , the second semiconductor layer 15 , and the protective layer 30 . insulated by A plurality of the second contact layers 33 may be disposed to be spaced apart from each other.

The second contact layer 33 may be connected to the protrusion 51 of the second electrode layer 50 , and the protrusion 51 may protrude from the diffusion barrier layer 52 . The protrusion 51 may penetrate through the hole 41A disposed in the insulating layer 41 and the protective layer 30 , and may be insulated from the first electrode layer 20 .

The second contact layer 33 may include, for example, at least one of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au, and Mo. As another example, the protrusion 501 may include at least one of a material constituting the diffusion barrier layer 52 and the bonding layer 54 , but is not limited thereto. For example, the protrusion 51 may include, for example, at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, or Ta.

The pad 25 is electrically connected to the first electrode layer 20 and may be exposed in the area A1 outside the sidewall of the light emitting structure 10 . One or a plurality of the pads 25 may be disposed. The pad 25 may include, for example, at least one of Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo materials.

The light-transmitting layer 45 may protect the surface of the light-emitting structure 10 , insulate between the pad 91 and the light-emitting structure 10 , and may come into contact with the peripheral portion of the protective layer 30 . have. The light-transmitting layer 45 has a lower refractive index than a material of the semiconductor layer constituting the light-emitting structure 10 , and may improve light extraction efficiency. The light-transmitting layer 45 may be formed of, for example, oxide or nitride. For example, the light-transmitting layer 45 is at least one from the group consisting of SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, and the like. may be selected and formed. Meanwhile, the light-transmitting layer 45 may be omitted depending on the design. According to an embodiment, the light emitting structure 10 may be driven by the first electrode layer 20 and the second electrode layer 50 .

The light source module of the embodiment(s) disclosed above may be provided in a lighting system such as a light unit. The light source module may include at least one of a light guide plate, a diffusion sheet, and a prism sheet in the light emission area. The lighting system may be a lighting lamp, a traffic light, a vehicle headlamp, or an electric sign.

Features, structures, effects, etc. described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, features, structures, effects, etc. illustrated in each embodiment can be combined or modified for other embodiments by those of ordinary skill in the art to which the embodiments belong. Accordingly, the contents related to such combinations and modifications should be interpreted as being included in the scope of the present invention.

In addition, although the embodiment has been described above, it is only an example and does not limit the present invention, and those of ordinary skill in the art to which the present invention pertains are exemplified above in a range that does not depart from the essential characteristics of the present embodiment. It can be seen that various modifications and applications that have not been made are possible. For example, each component specifically shown in the embodiment can be implemented by modification. And differences related to such modifications and applications should be construed as being included in the scope of the present invention defined in the appended claims.

110: circuit board
113: recess
121,121A,121B,121C,121D,121E: Reflector
115: first pad
117: second pad
131: adhesive layer
141: optical sheet
150: light emitting element
151: light emitting chip
153: phosphor layer
190: optical lens

Claims (13)

a light emitting device comprising a light emitting chip and a phosphor layer on a surface of the light emitting chip;
a circuit board having a first region under the light emitting chip and a concave portion around the first region;
a reflector disposed on the concave portion along the periphery of the first region of the circuit board; and
An optical lens disposed on the phosphor layer,
The optical lens includes an incident surface disposed on the phosphor layer and the concave portion, and an exit surface for emitting light incident to the incident surface,
The upper surface area of the phosphor layer is larger than the upper surface area of the light emitting chip,
The lower surface area of the incident surface of the optical lens is larger than the upper surface area of the phosphor layer,
The inner portion of the reflector is disposed to overlap in the vertical direction to the incident surface of the optical lens,
The surface of the reflector is disposed lower than the position of the active layer in the light emitting chip. According to claim 1,
an adhesive layer between the reflector and the bottom of the recess;
The concave portion comprises a continuously connected ring shape,
The reflector is a light source module having a surface uneven pattern. 3. The method of claim 2,
The reflector has a gradually thicker thickness as it goes away from the light emitting device,
The depth of the concave portion is thicker than the inner thickness of the light source module of the reflector. 3. The method of claim 2,
The reflector is a light source module having a pattern having a concentric circle shape around the light emitting element. 5. The method according to any one of claims 1 to 4,
The outer region of the concave portion is disposed outside the incident surface of the optical lens,
The outer shape of the concave portion has the same shape as the outer shape of the incident surface of the optical lens,
The first region of the circuit board is lower than the top surface of the circuit board and is located higher than the bottom of the concave part,
The phosphor layer is disposed on the upper surface and the side surface of the light emitting chip,
The width of the phosphor layer is smaller than the width of the incident surface of the optical lens module. delete delete delete delete delete delete delete delete

Images