KR20120014972A - Light emitting device, method for fabricating the light emitting device, light emitting device package and lighting system - Google Patents

Abstract

PURPOSE: A light emitting device, a manufacturing method thereof, a light emitting device package, and a lighting system are provided to improve the luminous efficiency of a light emitting device by reducing a current collected between an electrode and a supporting substrate. CONSTITUTION: A light emitting structure layer(135) includes a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer. An electrode(115) is formed on the light emitting structure layer. A passivation layer(180) is arranged on a side and protective layer(140) of the light emitting structure layer. The protective layer forms a space part(141) while being separated from the light emitting structure layer. The passivation layer tightly seals the space part.

Description

LIGHT EMITTING DEVICE, METHOD FOR FABRICATING THE LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM}

The present invention relates to a light emitting device, a light emitting device manufacturing method, a light emitting device package and an illumination system.

Light emitting diodes (LEDs) are a type of semiconductor device that converts electrical energy into light. Light emitting diodes have the advantages of low power consumption, semi-permanent life, fast response speed, safety and environmental friendliness compared to conventional light sources such as fluorescent and incandescent lamps. Accordingly, many researches are being conducted to replace existing light sources with light emitting diodes, and the use of light emitting diodes is increasing as a light source for lighting devices such as various lamps, liquid crystal displays, electronic displays, and street lamps that are used indoors and outdoors.

The embodiment provides a light emitting device having a new structure, a light emitting device manufacturing method, a light emitting device package, and an illumination system.

The embodiment provides a light emitting device, a light emitting device manufacturing method and a light emitting device package and lighting system with improved electrical stability.

The light emitting device according to the embodiment includes a conductive support substrate; A protective layer disposed in at least a peripheral region on the conductive support substrate; A light emitting structure layer including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on the conductive support substrate and the protective layer; An electrode on the light emitting structure layer; And a passivation layer disposed on at least a side of the light emitting structure layer and on the passivation layer, wherein the passivation layer forms a space portion at least partially spaced from the light emitting structure layer, and the passivation layer seals the space portion. do.

The embodiment can provide a light emitting device having a new structure, a light emitting device manufacturing method, a light emitting device package, and an illumination system.

The embodiment can provide a light emitting device, a light emitting device manufacturing method, a light emitting device package, and an illumination system having improved electrical stability.

1 illustrates a light emitting element according to an embodiment.
2 to 12 illustrate a method of manufacturing a light emitting device according to an embodiment.
13 is a view for explaining a light emitting element according to the second embodiment.
14 is a view for explaining a light emitting element according to the third embodiment;
Fig. 15 is a diagram explaining a light emitting element according to the fourth embodiment.
16 is a cross-sectional view of a light emitting device package including a light emitting device according to the embodiment.
17 illustrates a backlight unit using a light emitting device package according to an embodiment.
18 is a perspective view of a lighting unit using a light emitting device package according to the embodiments.

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure is formed "on" or "under" a substrate, each layer The terms " on "and " under " encompass both being formed" directly "or" indirectly " In addition, the criteria for the top or bottom of each layer will be described with reference to the drawings.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.

Hereinafter, a light emitting device, a light emitting device manufacturing method, and a light emitting device package according to embodiments will be described with reference to the accompanying drawings.

1 is a view for explaining a light emitting device according to the first embodiment.

Referring to FIG. 1, the light emitting device 100 according to the first embodiment includes a conductive support substrate 175, a bonding layer 170 on the conductive support substrate 175, and a bonding layer 170. A reflective layer 160, an ohmic contact layer 150 on the reflective layer 160, a protective layer 140 on the bonding layer 170, the ohmic contact layer 150, and the protective layer 140. ) Is disposed on the light emitting structure layer 135 to generate light, the passivation layer 180 to protect the light emitting structure layer 135, the current blocking on the reflective layer 160 and the light emitting structure layer 135 A layer 145 and an electrode 115 on the light emitting structure layer 135.

The conductive support substrate 175 may support the light emitting structure layer 135 and provide power to the light emitting structure layer 135 together with the electrode 115. The conductive support substrate 175 may include, for example, copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), tungsten (W), aluminum (Al), and copper-tungsten (Cu-W). And a carrier wafer (eg, Si, Ge, GaAs, GaN, ZnO, SiC, SiGe, etc.).

The thickness of the conductive support substrate 175 may vary depending on the design of the light emitting device 100, but may have, for example, a thickness of 50 μm to 300 μm.

The bonding layer 170 may be formed on the conductive support substrate 175. The bonding layer 170 is a bonding layer, and is formed under the protective layer 140. In the first embodiment, the bonding layer 170 is illustrated in contact with the lower surface of the protective layer 140.

The bonding layer 170 may include a barrier metal or a bonding metal, and may include, for example, at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Nb, Bi, Cu, Ag, or Ta. Can be.

The reflective layer 160 may be formed on the bonding layer 170. The reflective layer 160 may reflect light incident from the light emitting structure layer 135 to improve light extraction efficiency. In the first embodiment, the protective layer 140 is formed on the entire upper surface of the bonding layer 170, and the reflective layer 160 is disposed on the protective layer 140.

The reflective layer 160 may be formed of, for example, a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf. In addition, the reflective layer 160 may be formed in a multilayer using the metal or alloy and a light-transmitting conductive material such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, and the like, for example, IZO / Ni, AZO. / Ag, IZO / Ag / Ni, AZO / Ag / Ni and the like can be laminated.

In the first embodiment, the upper surface of the reflective layer 160 is illustrated in contact with the ohmic contact layer 150, but the reflective layer 160 is the protective layer 140, the current blocking layer 145, or light emission. It may be in contact with the structural layer 135.

The ohmic contact layer 150 may be formed on the reflective layer 160. The ohmic contact layer 150 is in ohmic contact with the second conductive semiconductor layer 130 so that power is smoothly supplied to the light emitting structure layer 135, and ITO, IZO, IZTO, IAZO, IGZO, IGTO, At least one of AZO and ATO.

That is, the ohmic contact layer 150 may selectively use a translucent conductive layer and a metal, and may include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), and indium aluminum zinc oxide (AZO). ), Indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni, Ag It may be implemented in a single layer or multiple layers using one or more of, Ni / IrO x / Au, and Ni / IrO x / Au / ITO.

In the first embodiment, the ohmic contact layer 150 contacts the bottom and side surfaces of the current blocking layer 145. However, the ohmic contact layer 150 is spaced apart from the current blocking layer 145. It may be disposed or only contact the side of the current blocking layer 145.

The current blocking layer (CBL) 145 may be formed between the ohmic contact layer 150 and the second conductive semiconductor layer 130. An upper surface of the current blocking layer 145 may contact the second conductive semiconductor layer 130, and a lower surface and a side surface of the current blocking layer 145 may contact the ohmic contact layer 150.

The current blocking layer 145 may be formed such that at least a portion of the current blocking layer 145 overlaps with the electrode 115 in the vertical direction, thereby concentrating the current at the shortest distance between the electrode 115 and the conductive support substrate 175. The light emitting efficiency of the light emitting device 100 may be improved by alleviating the phenomenon.

The current blocking layer 145 is a material having lower electrical conductivity than the reflective layer 160 or the ohmic contact layer 150, a material forming Schottky contact with the semiconductor layer 130 of the second conductivity type, or an electrical It may be formed using an insulating material, for example, ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, ZnO, SiO ₂ , SiO _x , SiO _x N _y , At least one of Si ₃ N ₄ , Al ₂ O _{3 ,} TiO _x , Ti, Al, or Cr.

The protective layer 140 may be formed in a peripheral area of the upper surface of the bonding layer 170. That is, the protective layer 140 may be formed in the peripheral region between the light emitting structure layer 135 and the bonding layer 170, and is formed of an electrically conductive material. A portion of the passivation layer 140 overlaps the light emitting structure layer 135 in a vertical direction. In the first embodiment, the protective layer 140 is formed on the entire upper surface of the bonding layer 170, but is not limited thereto.

The protective layer 140 is insulated by the etching process to separate the light emitting structure layer 145 into unit chips in a chip separation process. Debris is generated in the bonding layer 170 so that the fragment is between the second conductive semiconductor layer 130 and the active layer 120 or between the active layer 120 and the first conductive semiconductor layer 110. Attached to prevent electrical shorts. The protective layer 140 is formed of a material that is not broken or fragments during the isolation etching. For example, the protective layer 140 may be formed of a material including at least one of Ti, Ni, Pt, Pd, Rh, Ir, or W.

In the first embodiment, a space 141 is formed between the passivation layer 140 and the light emitting structure layer 135. The space 141 may be an empty space in which a semiconductor material, an insulating material, a metal, and the like are not filled. The space 141 may be enclosed by the protective layer 140, the light emitting structure layer 135, and the passivation layer 180.

The space portion 141 may be formed to a height of 1nm-10㎛. That is, the distance between the light emitting structure layer 135 and the protective layer 140 may be 1nm-10㎛.

In the first embodiment, a portion of the protective layer 140 remains between the space part 141 and the ohmic contact layer 150 such that the protective layer 140 contacts the light emitting structure layer 135. It is.

The light emitting structure layer 135 may be formed on the ohmic contact layer 150, the space part 141, and the protective layer 140.

Sides of the light emitting structure layer 135 may be formed with an inclined surface in an isolation etching process divided into unit chips, and a portion of the inclined surface may be formed with the protective layer 140 and / or the space part 141. Overlap in the vertical direction.

A portion of the upper surface of the protective layer 140 may be exposed by the isolation etching. Accordingly, the protective layer 140 overlaps the light emitting structure layer 135 with some regions in the vertical direction and does not overlap the light emitting structure layer 135 with the remaining regions in the vertical direction.

The light emitting structure layer 135 may include a compound semiconductor layer of a plurality of group III-V elements, and may include, for example, a first conductive semiconductor layer 110 and a first conductive semiconductor layer ( The active layer 120 may be formed under the active layer 120, and the semiconductor layer 130 of the second conductivity type may be included under the active layer 120.

The first conductivity type semiconductor layer 110 is a compound semiconductor of a group III-V element doped with a first conductivity type dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs , GaP, GaAs, GaAsP, AlGaInP and the like. When the first conductivity type semiconductor layer 110 is an N type semiconductor layer, the first conductivity type dopant includes an N type dopant such as Si, Ge, Sn, Se, Te, or the like. The first conductive semiconductor layer 110 may be formed as a single layer or a multilayer, but is not limited thereto.

The active layer 120 is formed under the first conductive semiconductor layer 110, and may include any one of a single quantum well structure, a multi-quantum well structure (MQW), a quantum dot structure, and a quantum line structure. The active layer 120 may be formed of a well layer and a barrier layer, for example, an InGaN well layer / GaN barrier layer or an InGaN well layer / AlGaN barrier layer, using a compound semiconductor material of a group III-V element.

A clad layer may be formed between the active layer 120 and the first conductive semiconductor layer 110 or between the active layer 120 and the second conductive semiconductor layer 130. It may be formed of an AlGaN-based semiconductor.

The second conductive semiconductor layer 130 is formed under the active layer 120 and is a compound semiconductor of a group III-V element doped with a second conductive dopant, eg, GaN, AlN, AlGaN, InGaN. , InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like. When the second conductive semiconductor layer 130 is a P-type semiconductor layer, the second conductive dopant includes a P-type dopant such as Mg and Zn. The second conductive semiconductor layer 130 may be formed as a single layer or a multilayer, but is not limited thereto.

The light emitting structure layer 135 may include an N-type semiconductor layer or a P-type semiconductor layer under the second conductive semiconductor layer 130. For example, the light emitting structure layer 135 may include at least one of an N-P junction, a P-N junction, an N-P-N junction, or a P-N-P junction structure.

The electrode 115 is formed on the light emitting structure layer 135. The electrode 115 may include a pad portion to which wire bonding is performed and an electrode portion extending from the pad portion. The electrode part may be branched in a predetermined pattern shape and may be formed in various shapes.

A roughness pattern 112 may be formed on the top surface of the first conductive semiconductor layer 110 for light extraction efficiency. Accordingly, a roughness pattern may be formed on the upper surface of the electrode 115, but the present invention is not limited thereto.

The passivation layer 180 may be formed on at least a side of the light emitting structure layer 135. In the exemplary embodiment, the passivation layer 180 is formed on the top surface of the first conductive semiconductor layer 110 and the top surface of the protective layer 140 as well as the side surface of the light emitting structure layer 135. It does not limit to this.

The passivation layer 180 may be formed to electrically protect the light emitting structure layer 135.

In the first embodiment, a part of the passivation layer 180 seals the space part 141. For example, the space part 141 may be disposed in a quadrangular shape spaced apart from the side surface along the side surface of the light emitting device 100 at the periphery of the light emitting device 100, the passivation layer 180 is The peripheral portion of the light emitting device 100 is disposed along one side of the space portion 141 along the side of the light emitting device 100.

Accordingly, a portion of the passivation layer 180 may be disposed on the same horizontal plane as at least one of the ohmic contact layer 150 and the current blocking layer 145.

In the light emitting device 100 according to the first embodiment, the space part 141 is formed under the lower circumferential region of the light emitting structure layer 135. Since the space 141 has an electrically insulating property, current does not flow in a portion where the space 141 is disposed.

When the space part 141 is not formed, the protective layer 140 comes into contact with the lower circumferential region of the light emitting structure layer 135, and since the protective layer 140 has electrical conductivity, the light emitting structure layer A phenomenon in which current flows in a lower circumferential region of 135 may occur. Accordingly, the electrical stability of the light emitting device 100 may be impaired, and the light efficiency of the light emitting device 100 may be reduced.

On the other hand, the light emitting device 100 according to the first embodiment can prevent the current from being concentrated in the peripheral region of the light emitting structure layer 135, and thus has an advantage of excellent electrical stability and light efficiency.

13 is a view for explaining a light emitting device according to the second embodiment.

In the description of the light emitting device 100 illustrated in FIG. 13, a description overlapping with the description of the light emitting device 100 described above will be omitted.

Referring to FIG. 13, unlike the light emitting device according to the first embodiment, the light emitting device 100 according to the second embodiment may have the protective layer 140 formed only in the peripheral area on the bonding layer 170. In this case, the bonding layer 170 may be in contact with the reflective layer 160 and the protective layer 140.

Since the protective layer 140 is formed only in the circumferential region on the bonding layer 170, the material of the protective layer 140 may be freely selected because there is little restriction on the electrical characteristics or the bonding characteristics of the protective layer 140. .

14 is a view for explaining a light emitting device according to the third embodiment.

In the description of the light emitting device 100 illustrated in FIG. 14, a description overlapping with the description of the light emitting device 100 described above will be omitted.

Referring to FIG. 14, in the light emitting device according to the first exemplary embodiment, a part of the protective layer 140 remains between the space part 141 and the ohmic contact layer 150, so that the protective layer 140 may be formed. Although contact with the light emitting structure layer 135 is illustrated, in the light emitting device according to the third embodiment, the protective layer 140 between the space part 141 and the ohmic contact layer 150 is removed.

As a result, the protective layer 140 and the light emitting structure layer 135 may be completely spaced apart from each other. In this case, the space part 141 may include the protective layer 140, the ohmic contact layer 150, and the light emitting structure layer. 135, and may be enclosed by the passivation layer 180.

15 is a view for explaining a light emitting device according to the fourth embodiment.

In the description of the light emitting device 100 illustrated in FIG. 15, a description overlapping with the description of the light emitting device 100 described above will be omitted.

Referring to FIG. 15, a current blocking layer 145 is not formed under the light emitting structure layer 135, and a portion of the protective layer 140 contacts the light emitting structure layer 135. The protective layer 140 may have a lower electrical conductivity than the ohmic contact layer 150, so that the contact portion between the protective layer 140 and the light emitting structure layer 135 is the current blocking layer 145. It can also function as Therefore, at least a portion of the contact portion of the passivation layer 140 and the light emitting structure layer 135 may overlap the electrode 115 in the vertical direction.

Hereinafter, a method of manufacturing the light emitting device according to the first embodiment will be described in detail. However, the content overlapping with the above description will be omitted or briefly described.

2 to 12 illustrate a method of manufacturing the light emitting device according to the first embodiment.

Referring to FIG. 2, the light emitting structure layer 135 is formed on the growth substrate 101. The growth substrate 101 may be formed of, for example, at least one of sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge, but is not limited thereto.

The light emitting structure layer 135 may be formed by growing the first conductive semiconductor layer 110, the active layer 120, and the second conductive semiconductor layer 130 on the growth substrate 101. .

The light emitting structure layer 135 may include, for example, Metal Organic Chemical Vapor Deposition (MOCVD), Chemical Vapor Deposition (CVD), Plasma-Enhanced Chemical Vapor Deposition (PECVD), Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), and the like may be formed using, but are not limited thereto.

Meanwhile, a buffer layer (not shown) and / or an undoped nitride layer (not shown) may be formed between the light emitting structure layer 135 and the growth substrate 101 to mitigate lattice mismatch due to a lattice constant difference. .

Referring to FIG. 3, the current blocking layer 145 may be formed on the second conductive semiconductor layer 130. The current blocking layer 145 may be formed using a mask pattern.

4 and 5, the ohmic contact layer 150 is formed on the second conductive semiconductor layer 130 and the current blocking layer 145, and the ohmic contact layer 150 is formed on the ohmic contact layer 150. The reflective layer 160 may be formed.

The ohmic contact layer 150 and the reflective layer 160 may be formed by, for example, any one of electron beam (E-beam) deposition, sputtering, and plasma enhanced chemical vapor deposition (PECVD). .

However, according to the fourth embodiment illustrated in FIG. 15, the process of forming the current blocking layer 145 may be omitted, and the ohmic contact layer 150 and the reflective layer 160 may be illustrated in FIG. 15. It can be formed as.

Referring to FIG. 6, the passivation layer 140 is formed on the light emitting structure layer 135 and the reflective layer 160.

However, according to the second embodiment illustrated in FIG. 13, the protective layer 140 may be formed only around the unit chip region on the light emitting structure layer 135.

Referring to FIG. 7, the conductive support substrate 175 is prepared, and the structure shown in FIG. 6 and the conductive support substrate 175 are bonded to each other through the bonding layer 170.

The conductive support substrate 175 is attached by the bonding layer 170. Although the embodiment is illustrated that the conductive support substrate 175 is bonded by the bonding layer 170, the conductive support substrate 175 may be formed by a plating method or a deposition method.

Referring to FIG. 8, the growth substrate 101 is removed from the light emitting structure layer 135. In FIG. 8, the structure illustrated in FIG. 7 is shown upside down.

The growth substrate 101 may be removed by a laser lift off method or a chemical lift off method.

9 and 10, the light emitting structure layer 135 is isolated by a plurality of light emitting structure layers 135 by isolation etching according to a unit chip region. For example, the isolation etching may be performed by a dry etching method such as inductively coupled plasma (ICP).

In addition, wet etching is performed on the protective layer 140 to form a space 141 in which the protective layer 140 is partially removed.

However, according to the third exemplary embodiment illustrated in FIG. 14, the protective layer 140 may be removed to expose the ohmic contact layer 150. In this case, the light emitting structure layer 135 and the protective layer ( 140 may be spaced apart with the space 141 therebetween.

Referring to FIG. 11, a passivation layer 180 is formed on the passivation layer 140 and the light emitting structure layer 135, and the passivation layer is exposed to expose the top surface of the first conductive semiconductor layer 110. Optionally remove 180. In this case, the passivation layer 180 may partially fill the space 141 and the space 141 may be sealed by the passivation layer 180.

A roughness pattern 112 is formed on the top surface of the first conductive semiconductor layer 110 to improve light extraction efficiency, and an electrode 115 is formed on the roughness pattern 112. The roughness pattern 112 may be formed by a wet etching process or a dry etching process.

On the other hand, after forming the roughness pattern 112 for improving the light extraction efficiency on the first conductive semiconductor layer 110, it is also possible to form the passivation layer 180.

In addition, when the structure is separated into a unit chip region through a chip separation process, a plurality of light emitting devices 100 as illustrated in FIG. 12 may be manufactured.

The chip separation process includes, for example, a breaking process of separating a chip by applying a physical force using a blade, a laser scrubbing process of separating a chip by irradiating a laser to a chip boundary, and a wet or dry etching process. It may include an etching process, but is not limited thereto.

16 is a cross-sectional view of a light emitting device package including a light emitting device according to embodiments.

Referring to FIG. 16, the light emitting device package 200 according to the embodiment may include a body 20, a first electrode layer 31 and a second electrode layer 32 installed on the body 20, and the body 20. And a light emitting device 100 according to embodiments installed in the first electrode layer 31 and the second electrode layer 32, and a molding member 40 surrounding the light emitting device 100. do.

The body 20 may include a silicon material, a synthetic resin material, or a metal material, and may have a cavity having a side surface formed with an inclined surface.

The first electrode layer 31 and the second electrode layer 32 are electrically separated from each other, and provide power to the light emitting device 100. In addition, the first electrode layer 31 and the second electrode layer 32 may increase light efficiency by reflecting the light generated from the light emitting device 100, and externally generate heat generated from the light emitting device 100. May also act as a drain.

The light emitting device 100 may be installed on the body 20 or on the first electrode layer 31 or the second electrode layer 32.

The light emitting device 100 may be electrically connected to the first electrode layer 31 and the second electrode layer 32 by any one of a wire method, a flip chip method, or a die bonding method. In the exemplary embodiment, the light emitting device 100 is electrically connected to the first electrode layer 31 through the wire 50 and directly connected to the second electrode layer 32.

The molding member 40 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 40 may include a phosphor to change the wavelength of the light emitted from the light emitting device 100.

A plurality of light emitting device packages 200 according to an embodiment are arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, a fluorescent sheet, or the like, which is an optical member, is disposed on a path of light emitted from the light emitting device package 200. Can be. The light emitting device package 200, the substrate, and the optical member may function as a backlight unit or as a lighting unit. For example, the lighting system may include a backlight unit, a lighting unit, an indicator device, a lamp, and a street lamp. .

17 illustrates a backlight unit using a light emitting device package according to an embodiment. However, the backlight unit 1100 of FIG. 17 is an example of an illumination system, but is not limited thereto.

Referring to FIG. 17, the backlight unit 1100 may include a bottom frame 1140, an optical guide member 1120 disposed in the bottom frame 1140, and at least one side or lower surface of the optical guide member 1120. It may include a light emitting module 1110 disposed in. In addition, a reflective sheet 1130 may be disposed under the light guide member 1120.

The bottom frame 1140 may be formed by forming a box having an upper surface open to accommodate the light guide member 1120, the light emitting module 1110, and the reflective sheet 1130. Or it may be formed of a resin material but is not limited thereto.

The light emitting module 1110 may include a substrate 300 and a light emitting device package 200 according to a plurality of embodiments mounted on the substrate 300. The plurality of light emitting device packages 200 may provide light to the light guide member 1120.

As shown, the light emitting module 1110 may be disposed on at least one of the inner surfaces of the bottom frame 1140, thereby providing light toward at least one side of the light guide member 1120. can do.

However, the light emitting module 1110 may be disposed under the bottom frame 1140 to provide light toward the bottom surface of the light guide member 1120, which is according to the design of the backlight unit 1100. Since various modifications are possible, the present invention is not limited thereto.

The light guide member 1120 may be disposed in the bottom frame 1140. The light guide member 1120 may guide the light provided from the light emitting module 1110 to a display panel by surface light source.

The light guide member 1120 may be, for example, a light guide panel (LGP). The light guide plate may be formed of, for example, one of an acrylic resin series such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), COC, and polyethylene naphthalate (PEN) resin.

The optical sheet 1150 may be disposed above the light guide member 1120.

The optical sheet 1150 may include at least one of, for example, a diffusion sheet, a light collecting sheet, a luminance rising sheet, or a fluorescent sheet. For example, the optical sheet 1150 may be formed by stacking the diffusion sheet, the light collecting sheet, the luminance increasing sheet, and the fluorescent sheet. In this case, the diffusion sheet 1150 may evenly diffuse the light emitted from the light emitting module 1110, and the diffused light may be focused onto a display panel (not shown) by the light collecting sheet. In this case, the light emitted from the light collecting sheet is randomly polarized light, and the luminance increasing sheet may increase the degree of polarization of the light emitted from the light collecting sheet. The light collecting sheet may be, for example, a horizontal or / and vertical prism sheet. In addition, the luminance increase sheet may be, for example, a roughness enhancement film. In addition, the fluorescent sheet may be a translucent plate or film containing a phosphor.

The reflective sheet 1130 may be disposed under the light guide member 1120. The reflective sheet 1130 may reflect light emitted through the bottom surface of the light guide member 1120 toward the exit surface of the light guide member 1120.

The reflective sheet 1130 may be formed of a resin material having good reflectance, for example, PET, PC, PVC resin, etc., but is not limited thereto.

18 is a perspective view of a lighting unit using a light emitting device package according to the embodiments. However, the lighting unit 1200 of FIG. 18 is an example of a lighting system, but is not limited thereto.

Referring to FIG. 18, the lighting unit 1200 is installed in the case body 1210, the light emitting module 1230 installed in the case body 1210, and the case body 1210, and provides power from an external power source. It may include a receiving connection terminal 1220.

The case body 1210 is preferably formed of a material having good heat dissipation characteristics, for example, may be formed of a metal material or a resin material.

The light emitting module 1230 may include a substrate 300 and a light emitting device package 200 according to at least one embodiment mounted on the substrate 300.

The substrate 300 may have a circuit pattern printed on an insulator, and for example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, and the like. It may include.

In addition, the substrate 300 may be formed of a material that reflects light efficiently, or the surface may be formed of a color that reflects light efficiently, for example, white, silver, or the like.

The light emitting device package 200 according to the at least one embodiment may be mounted on the substrate 300. Each of the light emitting device packages 200 may include at least one light emitting diode (LED). The light emitting diodes may include colored light emitting diodes emitting red, green, blue, or white colored light, and UV light emitting diodes emitting ultraviolet (UV) light.

The light emitting module 1230 may be arranged to have a combination of various light emitting diodes in order to obtain color and brightness. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI). In addition, a fluorescent sheet may be further disposed on a path of the light emitted from the light emitting module 1230, and the fluorescent sheet changes the wavelength of light emitted from the light emitting module 1230. For example, when the light emitted from the light emitting module 1230 has a blue wavelength band, the fluorescent sheet may include a yellow phosphor, and the light emitted from the light emitting module 1230 finally passes white light through the fluorescent sheet. Will be shown.

The connection terminal 1220 may be electrically connected to the light emitting module 1230 to supply power. According to FIG. 18, the connection terminal 1220 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1220 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

In the lighting system as described above, at least one of a light guide member, a diffusion sheet, a light collecting sheet, a luminance rising sheet, and a fluorescent sheet may be disposed on a propagation path of light emitted from the light emitting module to obtain a desired optical effect.

As described above, the lighting system according to the embodiments has the advantage of excellent light efficiency and high electrical stability by including the light emitting device package according to the embodiments.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

In addition, the above description has been made with reference to the embodiment, which is merely an example, and is not intended to limit the present invention. Those skilled in the art to which the present invention pertains will be illustrated as above without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

Claims (7)

Conductive support substrate;
A protective layer disposed in at least a peripheral region on the conductive support substrate;
A light emitting structure layer including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on the conductive support substrate and the protective layer;
An electrode on the light emitting structure layer; And
A passivation layer disposed on at least a side of the light emitting structure layer and on the protective layer,
The passivation layer is at least partially spaced apart from the light emitting structure layer to form a space portion, and the passivation layer to seal the space portion. The method of claim 1,
The space portion is a light emitting device formed to a height of 1nm-10㎛. The method of claim 1,
The protective layer includes at least one material of Ti, Ni, Pt, Pd, Rh, Ir, or W. The method of claim 1,
The protective layer is disposed on the entire area of the conductive support substrate. The method of claim 1,
The passivation layer is a light emitting device in contact with the light emitting structure layer. The method of claim 1,
And a bonding layer between the conductive support substrate and the light emitting structure layer, a reflective layer on the bonding layer, an ohmic contact layer on the reflective layer, and a current blocking layer on the ohmic contact layer, wherein the current blocking layer is the electrode. And at least a portion of which overlaps in the vertical direction. The method of claim 1,
A bonding layer between the conductive support substrate and the light emitting structure layer, a reflective layer on the bonding layer, and an ohmic contact layer on the reflective layer,
And the protective layer contacts the light emitting structure layer at a portion where at least a portion of the protective layer overlaps with the electrode in a vertical direction.

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