KR102131309B1 - Phosphor and light emitting device package including the same - Google Patents

Abstract

Examples include a silicate-based first phosphor that emits light in the yellow wavelength range; A nitride-based second phosphor that emits light in the green wavelength region; And a third phosphor of a night light series emitting light in a red wavelength region, and a half width of light emitted by the first to third phosphors is 110 nanometers or more.

Description

Phosphor and light emitting device package including the same{PHOSPHOR AND LIGHT EMITTING DEVICE PACKAGE INCLUDING THE SAME}

The embodiment relates to a phosphor and a light emitting device package including the same.

Light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) using semiconductors of Groups 3-5 or 2-6 compound semiconductor materials are red, due to the development of thin film growth technology and device materials. Various colors such as green, blue, white, and ultraviolet light can be realized, and efficient white light can be realized by using fluorescent materials or combining colors, and low power consumption and semi-permanent life compared to conventional light sources such as fluorescent and incandescent lamps , Fast response speed, safety, and environmental friendliness.

Therefore, the light emitting diode can replace a light emitting diode backlight, a fluorescent lamp or an incandescent light bulb that replaces the Cold Cathode Fluorescence Lamp (CCFL) constituting the backlight of a transmission module of an optical communication means, a liquid crystal display (LCD) display device. Applications are expanding to white light emitting diode lighting devices, automotive headlights and traffic lights.

A light emitting device is formed on a substrate made of sapphire or the like, a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer is formed. The 1st electrode and the 2nd electrode are arrange|positioned.

The light emitting device emits light having energy determined by an energy band unique to a material forming an active layer when electrons injected through the first conductivity type semiconductor layer and holes injected through the second conductivity type semiconductor layer meet each other. The light emitted from the active layer may vary depending on the composition of the material constituting the active layer, and may be blue light, ultraviolet light (UV), or deep UV light.

In the light emitting device package, a cerium-doped YAG phosphor doped with cerium is disposed to excite the phosphor by blue light emitted from the light emitting device to generate yellow light. In addition, yellow light may be combined with blue light to form white light.

As an alternative to the yttrium aluminum garnet phosphor described above, attempts have been made to use a silicate phosphor or a nitride phosphor.

However, when only a silicate phosphor is used, a problem of thermal stability may occur. When the light emitting device package is used for a long time, the silicate phosphor is deteriorated by heat emitted from the light emitting diode, and thus the luminance tends to decrease gradually.

And, when using only a nitride phosphor, there is a problem that the light intensity is lower than that of the YAG phosphor.

The deterioration of the phosphor and the decrease in luminance may lead to a decrease in luminance and color mismatch in a backlight unit or the like in which a light emitting device package is used.

The embodiment is intended to provide a phosphor having excellent color reproducibility and low luminance degradation due to heat.

Examples include a silicate-based first phosphor that emits light in the yellow wavelength range; A nitride-based second phosphor that emits light in the green wavelength region; And a third phosphor of a night light series emitting light in a red wavelength region, and a half width of light emitted by the first to third phosphors is 110 nanometers or more.

The weight ratio of the first phosphor is 60% to 75%, the weight ratio of the second phosphor is 20% to 35%, and the weight ratio of the third phosphor may be 2% to 3%.

The first phosphor may include (Ba, Sr) ₂ SiO ₄ :Eu.

The second phosphor may include La ₃ Si ₆ N ₁₁ :Ce.

The third phosphor may include (Sr, Ca)AlSiN ₃ :Eu.

The light emitted from the first phosphor, the second phosphor, and the third phosphor forms white light, and the chromaticity coordinates of the green light constituting the white light may be CIEx: 0.296~0.316 and CIEy: 0.606~0.626.

The chromaticity coordinates of red light constituting white light may be CIEx: 0.624 to 0.644, and CIEy: 0.322 to 0.342.

The light emitted from the first phosphor, the second phosphor, and the third phosphor forms white light, and the chromaticity coordinates of the blue light constituting the white light may be CIEx: 0.142 to 0.162, and CIEy: 0.044 to 0.064.

Other embodiments include a first electrode and a second electrode that are electrically separated from each other; At least one light emitting device that is electrically connected to the first electrode and the second electrode and emits light in a first wavelength region; And a silicate-based first phosphor that is excited by light in the blue wavelength region emitted from the light emitting device to emit light in the second wavelength region and emits light in the yellow wavelength region, and emits light in the green wavelength region. A second phosphor of the nitride series, and a third phosphor of the nightlight series emitting light in the red wavelength region, the half-width of the light emitted from the first phosphor to the third phosphor is 110 nanometers or more phosphors Provides a light emitting device package.

The above-described light emitting device package may implement white light from a light emitting device that emits light in the blue region by using a silicate-based yellow phosphor and a nitride-based green phosphor/red phosphor, and has high thermal stability without deteriorating light intensity. Can have In addition, the half-width of the light emitted from the phosphor is 110 nanometers or more, and emits light in all areas of visible light, thereby providing excellent color.

1A and 1B are views showing one embodiment of a light emitting device,
2 is a view showing a first embodiment of a light emitting device package in which a light emitting device is disposed,
3A and 3B are diagrams showing the emission spectrum of the conventional light emitting device package and the emission spectrum of the light emitting device package according to the embodiment of FIG. 2, respectively.
4 is a view comparing the CIE color coordinate system with NTSC coordinates and the sRGB color coordinate system.
5 is a view showing a second embodiment of the light emitting device package in which the light emitting device is disposed,
6 is a view showing a third embodiment of a light emitting device package in which light emitting devices are disposed,
7 is a view illustrating a fourth embodiment of a light emitting device package in which light emitting devices are disposed,
8 is a view showing a fifth embodiment of a light emitting device package in which light emitting devices are disposed,
9 is a view showing an embodiment of an image display device in which a light emitting element is disposed,
10 is a view showing an embodiment of a lighting device in which a light emitting element is disposed.

Hereinafter, preferred embodiments of the present invention capable of specifically realizing the above object will be described with reference to the accompanying drawings.

In the description of the embodiment according to the present invention, when described as being formed on "on (up) or down (down)" (on or under) of each element, the top (top) or bottom (bottom) (on or under) includes both two elements directly contacting each other or one or more other elements formed indirectly between the two elements. Also, when expressed as “on (up) or down (on or under)”, it may include the meaning of the downward direction as well as the upward direction based on one element.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity. Also, the size of each component does not entirely reflect the actual size.

1A is a view showing an embodiment of a light emitting device.

The light emitting structure 120 includes a first conductivity type semiconductor layer 122, an active layer 124, and a second conductivity type semiconductor layer 126.

The first conductivity-type semiconductor layer 122 may be formed of a compound semiconductor such as a III-V group or a II-VI group, and the first conductivity-type dopant may be doped. The first conductive semiconductor layer 122 is a semiconductor material having a composition formula of Al _x In _y Ga _(1-xy) N (0≤x≤1, 0≤y≤1, 0≤x+y≤1), AlGaN , GaN, InAlGaN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP.

When the first conductivity-type semiconductor layer 122 is an n-type semiconductor layer, the first conductivity-type dopant may include an n-type dopant such as Si, Ge, Sn, Se, or Te. The first conductivity-type semiconductor layer 122 may be formed as a single layer or multiple layers, but is not limited thereto.

The active layer 124 is disposed between the first conductivity type semiconductor layer 122 and the second conductivity type semiconductor layer 126, and has a single well structure, a double well structure, a single quantum well structure, and a multiple quantum well. (MQW: Multi Quantum Well) structure, a quantum dot structure or a quantum wire structure.

The active layer 124 is a well layer and a barrier layer using a compound semiconductor material of a group III-V element, for example, AlGaN/AlGaN, InGaN/GaN, InGaN/InGaN, AlGaN/GaN, InAlGaN/GaN, GaAs (InGaAs) It may be formed of any one or more pair structure of /AlGaAs, GaP (InGaP) / AlGaP, but is not limited thereto. The well layer may be formed of a material having an energy band gap smaller than the energy band gap of the barrier layer.

The second conductivity-type semiconductor layer 126 may be formed of a semiconductor compound. The second conductivity type semiconductor layer 126 may be formed of a compound semiconductor such as a III-V group or a II-VI group, and a second conductivity type dopant may be doped. The second conductive semiconductor layer 126 is, for example, a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) , AlGaN, GaN AlInN, AlGaAs, GaP, GaAs, GaAsP, may be formed of any one or more of AlGaInP, for example, the second conductive semiconductor layer 126 may be made of Al _x Ga _(1-x) N have.

When the second conductivity-type semiconductor layer 126 is a p-type semiconductor layer, the second conductivity-type dopant may be a p-type dopant such as Mg, Zn, Ca, Sr or Ba. The second conductivity-type semiconductor layer 126 may be formed as a single layer or multiple layers, but is not limited thereto.

The surface of the first conductivity type semiconductor layer 122 may be patterned to improve light extraction efficiency, and the first electrode 180 is disposed on the surface of the first conductivity type semiconductor layer 122. The surface of the first conductivity type semiconductor layer 122 on which the one electrode 180 is disposed may not form a pattern. The first electrode 180 may be formed of a single layer or a multi-layer structure including at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (Au). have.

A passivation layer 190 may be formed around the light emitting structure 120. The passivation layer 190 may be made of an insulating material, and the insulating material may be made of a non-conductive oxide or nitride. As an example, the passivation layer 190 may be formed of a silicon oxide (SiO ₂ ) layer, an oxide nitride layer, or an aluminum oxide layer.

The second electrode should be disposed under the light emitting structure 120, and the ohmic layer 140 and the reflective layer 150 may act as the second electrode. GaN is disposed under the second conductivity type semiconductor layer 126 to smoothly supply current or holes to the second conductivity type semiconductor layer 126.

The ohmic layer 140 may be about 200 Angstroms thick. The ohmic layer 140 includes indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZAO), indium gallium zinc oxide (IGZO), and indium gallium tin oxide (IGTO). ), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx , NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, It may be formed of at least one of Au, Hf, and is not limited to such a material.

The reflective layer 150 includes molybdenum (Mo), aluminum (Al), silver (Ag), nickel (Ni), platinum (Pt), rhodium (Rh), or an alloy containing Al, Ag, Pt, or Rh It may be made of a metal layer. Aluminum or silver may effectively reflect light generated from the active layer 124 to greatly improve the light extraction efficiency of the semiconductor device, and molybdenum may be advantageous for plating growth of the protrusions described later.

The support substrate 170 may be formed of a conductive material such as a metal or semiconductor material. A metal having excellent electrical conductivity or thermal conductivity can be used, and since it must be capable of sufficiently dissipating heat generated during operation of a semiconductor device, it can be formed of a material having high thermal conductivity (ex. metal, etc.). For example, it may be made of a material selected from the group consisting of molybdenum (Mo), silicon (Si), tungsten (W), copper (Cu) and aluminum (Al) or alloys thereof, and also gold (Au) ), copper alloy (Cu Alloy), nickel (Ni), copper-tungsten (Cu-W), carrier wafer (e.g. GaN, Si, Ge, GaAs, ZnO, SiGe, SiC, SiGe, Ga ₂ O _3, etc.) And the like.

The support substrate 170 is 50 to 200 in order to have a mechanical strength sufficient to separate well into separate chips through a scribing process and a breaking process without bringing warpage to the entire nitride semiconductor. It can be made to the thickness of a micrometer.

The bonding layer 160 combines the reflective layer 150 and the support substrate 170, gold (Au), tin (Sn), indium (In), aluminum (Al), silicon (Si), silver (Ag), It may be formed of a material selected from the group consisting of nickel (Ni) and copper (Cu) or an alloy thereof.

1B is a view showing another embodiment of a light emitting device.

In the light emitting device 200 according to the present embodiment, the buffer layer 215 and the light emitting structure 220 are disposed on the substrate 210.

The substrate 210 may be formed of a material suitable for semiconductor material growth or a carrier wafer, may be formed of a material having excellent thermal conductivity, and may include a conductive substrate or an insulating substrate. For example, at least one of sapphire (Al ₂ O ₃ ), SiO ₂ , SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, and Ga ₂ 0 ₃ may be used.

When the substrate 210 is formed of sapphire or the like and the light emitting structure 220 including GaN or AlGaN is disposed on the substrate 210, lattice mismatch between GaN or AlGaN and sapphire is very large. The difference in coefficient of thermal expansion between them is also very large, resulting in dislocation, melt-back, crack, pit, poor surface morphology, etc., which deteriorate crystallinity. Therefore, the buffer layer 215 may be formed of AlN or the like.

Although not illustrated, an undoped GaN layer or an AlGaN layer is disposed between the buffer layer 215 and the light emitting structure 220 to prevent the above-described potential and the like from being transferred into the light emitting structure 220.

The light emitting structure 220 includes a first conductivity type semiconductor layer 222, an active layer 224, and a second conductivity type semiconductor layer 226, and the specific configuration or composition is the same as the embodiment illustrated in FIG. 1A. Do.

When the light emitting structure 220 is made of GaN or the like and emits visible light in the blue region, a transparent conductive layer 230 is disposed on the light emitting structure 220 to form a second conductive semiconductor layer from the second electrode 285 ( 226), it is possible to supply a current evenly over a large area.

When the substrate 210 is an insulating substrate, mesa etching is performed from the transparent conductive layer 230 to a part of the first conductive semiconductor layer 222 to supply current to the first conductive semiconductor layer 222, so that the first conductive A portion of the type semiconductor layer 222 may be exposed.

The first electrode 280 may be disposed on the exposed first conductivity type semiconductor layer 222, and the second electrode 285 may be disposed on the transparent conductive layer 230.

2 is a view showing a first embodiment of a light emitting device package including a light emitting device.

The light emitting device package 300 according to the embodiment is installed in the body 310 having a cavity, the first lead frame 321 and the second lead frame 322 installed in the body 310, and the body 310 The first lead frame 321 and the second lead frame 322 are electrically connected to the light emitting device 100 according to the above-described embodiments and a molding part 340 formed in the cavity.

The body 310 may be formed of a silicon material, a synthetic resin material, or a metal material. When the body 310 is made of a conductive material such as a metal material, although not shown, an insulating layer is coated on the surface of the body 310 to prevent electrical shorts between the first and second lead frames 321 and 322. Can.

The first lead frame 321 and the second lead frame 322 are electrically separated from each other, and supplies current to the light emitting device 100. In addition, the first lead frame 321 and the second lead frame 322 may reflect light generated from the light emitting device 100 to increase light efficiency, and heat generated from the light emitting device 100 It can also be discharged to the outside.

The light emitting device 100 may be installed on the body 310 or may be installed on the first lead frame 321 or the second lead frame 322, and in addition to the vertical light emitting device shown in FIG. 1A, FIG. 1B The horizontal type light emitting device shown in FIG.

In this embodiment, the first lead frame 321 and the light emitting device 100 are directly energized, and the second lead frame 322 and the light emitting device 100 are connected through a wire 330. The light emitting device 100 may be connected to the lead frames 321 and 322 by a flip chip method or a die bonding method in addition to the wire bonding method.

The molding unit 340 may surround and protect the light emitting device 100. In addition, a phosphor 350 is included on the molding part 340 to change the wavelength of light emitted from the light emitting device 100.

Light in the first wavelength region emitted from the light emitting device 100 is excited by the phosphor 350 to be converted into light in the second wavelength region, while the light in the second wavelength region passes through a lens (not shown). The optical path can be changed.

The phosphor 350 may include a first phosphor that emits light in the yellow wavelength region, a second phosphor that emits light in the green wavelength region, and a third phosphor that emits light in the red wavelength region. Specifically, the first phosphor may be a silicate-based phosphor, the second phosphor and the third phosphor may be nitride-based phosphors, and more specifically, the first phosphor includes (Ba, Sr) ₂ SiO ₄ :Eu. The second phosphor may include La ₃ Si ₆ N ₁₁ :Ce, and the third phosphor may include (Sr, Ca)AlSiN ₃ :Eu.

When excited by light in the blue wavelength region, the light emitted from the first phosphor exhibits a peak wavelength from 553 nanometers to 558 nanometers, the lowest of which is 553 nanometers and the highest of 558 nanometers are ± 1 nanometer, respectively. It may have an error, and the full width at half maximum of light emitted from the first phosphor represents 86 to 88 nanometers, and the half-width may have an error of ± 1 nanometer.

The light emitted from the second phosphor has a peak wavelength at 535 nanometers and the half-width is 107 nanometers, and the light emitted from the third phosphor has a peak wavelength at 625 nanometers and the half-width may be 81 nanometers.

When the wavelength of the emitted light is plotted with the horizontal axis as the length of the wavelength and the vertical axis as the intensity, the half width is parabolic and horizontal when the horizontal line is displayed at a portion corresponding to half (50%) of the peak value of the wavelength in light in the corresponding wavelength range. It means the length of the two points where this meets.

3A is a view showing an emission spectrum of a conventional light emitting device package, and FIG. 3B is a view showing an emission spectrum of a light emitting device package according to the embodiment of FIG. 2.

3A and 3B, the spectrum of blue light emitted from the light emitting device shows one peak in the region near 450 nanometers, and the light emitted by the excitation of the phosphor shows a peak in the longer wavelength region than blue light. The light emitting device package shown in FIG. 3A uses only a silicate phosphor, and a half width (W ₁ ) of light emitted from the phosphor is about 96 nanometers.

The light emitting device package illustrated in FIG. 3B includes the above-described three phosphors, and the half-width (W ₂ ) of a spectrum in which light emitted from the first phosphor to the third phosphor is mixed may be 110 nanometers or more, in detail Is greater than the half-width of each light emitted from the first phosphor to the third phosphor about 115 nanometers, and the phosphor shown in FIG. 3B than the half-width (W ₁ ) of light emitted from a single silicate-based phosphor shown in FIG. 3A. The half-width (W ₂ ) of the light emitted from is wide.

Table 1 below shows the chromaticity coordinates of the conventional Itron aluminum garnet-based phosphor and the phosphor according to the present embodiment.

YAG Silicate NTSC (%) 68.97 64.92 sRGB(%) 94.05 88.80 Rx 0.646 0.641 Ry 0.333 0.338 Gx 0.314 0.331 Gy 0.584 0.572 Bx 0.152 0.151 By 0.049 0.046 Luminance (cd) 2.98 2.96

The silicate phosphor of Table 1 can be excited by a light emitting device that emits light in the wavelength region of 153 nanometers, and the YAG phosphor can be excited by a light emitting device that emits light in the wavelength region of 149 nanometers. The YAG phosphor of Table 1 has a peak wavelength at 548 nanometers and a half width of 123 nanometers, and the silicate phosphor has a peak wavelength at 561 nanometers and a wavelength of 96 nanometers.

In this embodiment, a yellow color phosphor of a silicate series, a green phosphor of a nitride series, and a red phosphor may be mixed to represent chromaticity coordinates most similar to those of the conventional YAG phosphor.

That is, the volume ratio occupied by the phosphor in the total volume of the cavity is 11%, (Ba, Sr) ₂ SiO ₄ :Eu as the yellow phosphor, La ₃ Si ₆ N ₁₁ :Ce as the green phosphor, and (SrCa) as the red phosphor (SrCa). When AlSiN ₃ :Eu is used in a weight ratio of 68 to 30 to 2, respectively, it shows chromaticity coordinates similar to YAG phosphors.

4 is a view comparing the CIE color coordinate system with NTSC coordinates and the sRGB color coordinate system,

The CIE 1931 color coordinate system represents the area ratio of a triangle composed of three RGB points compared to the area of a triangle formed by NTSC coordinates, and the higher the value, the clearer the color is reproduced. sRGB is a proposed standard for the purpose of unification of a notation method for colors of various display devices.

In the sRGB color coordinate system, the chromaticity coordinates of red, green, and blue are (0.64, 0.33) and (0.30, 0.60) and (0.15, 0.06), respectively, and in this embodiment, the chromaticity coordinates of red, green, and blue are The chromaticity coordinates of the YAG phosphors (0.637, 0.331), (0.308, 0.619) and (0.153, 0.054) are similar to (0.634, 0.332), (306, 0.616) and (0.152, 0.054), respectively. Can.

In addition, in the sRGB color coordinate system, an allowable tolerance range for the red, green, and blue chromaticity coordinate systems described above is ±3/100. In this embodiment, the red, green, and blue chromaticity coordinates are all in the above-described error range. Is satisfied.

When the weight ratio of the yellow phosphor to the green phosphor and the red phosphor is outside the above-described range, chromaticity coordinates of each light in white light may be deteriorated.

In particular, the above-described phosphor may be filled in a volume of 10.5% to 11.5% of the volume of the cavity of the light emitting device package. If the volume of the phosphor is too small compared to the volume of the cavity, the phosphor caused by light emitted from the light emitting device The excitation of may not be sufficient, and if the volume ratio of the phosphor is too large, the absorption of blue light may be too large, so realization of white light may be difficult.

The weight ratio of the second phosphor may be 0.3 to 0.6 times the weight ratio of the first phosphor, the sum of the weights of the first phosphor and the second phosphor may be 95% or more of the total phosphor weight, and the weight of the third phosphor may be total It may be less than 5% of the weight of the phosphor, the sum of the weight of the first phosphor and the second phosphor and the third phosphor may be equal to the weight of the total phosphor.

The first phosphor, the second phosphor, and the third phosphor may be mixed in a weight ratio of 60% to 75%, 20% to 35%, and 2% to 3%, respectively, in the total phosphor, and more specifically, the first phosphor And the second phosphor and the third phosphor may be mixed in a weight ratio of 65 to 33 to 2 or a weight ratio of 70 to 27 to 3, wherein a half width of light emitted from the phosphor is 110 nanometers or more.

If there are too many first phosphors, the spectrum of light emitted from the light emitting element may be biased in the yellow direction, and if there are too many second phosphors, the spectrum of light emitted from the light emitting element may be biased in the green direction, and if there are too many third phosphors The spectrum of light emitted from the light emitting device may be biased in the red direction, and if each phosphor is included too little, the spectrum of light may be different because more phosphors are included.

In this case, the chromaticity coordinates of green light may be CIEx: 0.296 to 0.316, CIEy: 0.606 to 0.626, and the chromaticity coordinates of red light may be CIEx: 0.624 to 0.644, and CIEy: 0.322 to 0.342, and chromaticity coordinates of blue light. Is CIEx: 0.142 to 0.162, and CIEy: 0.044 to 0.0649.

The above-described light emitting device package may implement white light from a light emitting device that emits light in the blue region by using a silicate-based yellow phosphor, a nitride-based green phosphor, and a red phosphor, and has high thermal stability without deteriorating light intensity. Can have

5 is a view showing a second embodiment of a light emitting device package in which a light emitting device is disposed.

The light emitting device package 400 according to the embodiment includes a substrate 410, a first lead frame 421 and a second lead frame 422 disposed on the substrate, and the first lead frame 421. It comprises a light emitting device 100 is fixed through the conductive adhesive layer 440.

The substrate 410 may be made of a ceramic material having excellent thermal conductivity, and may be, for example, a square-shaped sapphire (Al ₂ O ₃ ), and the first lead frame 421 and the second lead frame 422 may be conductive, such as copper. It may be made of a material and may be disposed by plating gold (Au), for example. The first lead frame 421 and the second lead frame 422 may reflect light emitted from the light emitting device 100.

The light emitting device 100 may be provided with a light emitting diode or the like, and may be electrically connected to the second lead frame 422 through a wire 460. The wire 460 may be made of a conductive material, and may be made of gold (Au) having a diameter of about 0.8 to 1.6 millimeters. If the wire 460 is too thin, it may be cut by an external force, and if it is too thick, the material cost may decrease and light emitted from the light emitting device 100 may be an obstacle to progress. In this embodiment, a vertical type light emitting device is disposed, but a horizontal type light emitting device or a flip chip type light emitting device may be arranged.

The phosphor layer 470 is disposed on the light emitting device 100 in a conformal coating method to be disposed at a constant thickness, and the molding unit 480 is disposed around the light emitting device 100 and the like. The molding unit 480 may be formed in a dome type, or may be arranged in a different shape to control the light emission angle of the light emitting device package 400.

The molding unit 480 surrounds and protects the light emitting device 450 and can function as a lens by changing the path of light emitted from the light emitting device 100, and the phosphor layer 470 is emitted from the light emitting device 100. Light in the first wavelength region is converted into light in the second wavelength region.

Three pads 431, 432, and 435 are disposed on the rear surface of the substrate 410, which is made of a material having excellent thermal conductivity and is disposed under the substrate 410 to fix the light emitting device package 400 to a housing or the like. It can act as a path to dissipate heat.

The first and second lead frames 421 and 422 and the three pads 431, 432, and 435 may function as electrodes. The first lead frame 421 and the second lead frame 422 may be disposed on the substrate 410 to function as an upper electrode, and the first pad 431 and the second pad 432 may be the substrate 410 It may be disposed on the lower portion to act as a lower electrode, and the upper electrode and the lower electrode may be connected through via holes 421a and 422a described later.

That is, the first lead frames 421 and 422 form an upper electrode, and the first pad 431 and the second pad 432 form a lower electrode, and a conductive material is filled in the via holes 421a and 422a. A through electrode can be formed, and the above-described upper electrode, lower electrode, and through electrode can be referred to as first and second electrode parts.

In the light emitting device package according to the present embodiment, the phosphor 470 emits light in the first wavelength and yellow phosphor in the green wavelength region and in the first phosphor that emits light in the yellow wavelength region as described above. It may include a third phosphor to emit.

Specifically, the first phosphor may be a silicate-based phosphor, the second phosphor and the third phosphor may be nitride-based phosphors, and more specifically, the first phosphor includes (Ba, Sr) ₂ SiO ₄ :Eu. The second phosphor may include La ₃ Si ₆ N ₁₁ :Ce, and the third phosphor may include (Sr, Ca)AlSiN ₃ :Eu.

Therefore, the light emitting device package according to the present embodiment can implement white light from a light emitting device that emits light in the blue region by using a silicate-based yellow phosphor, a nitride-based green phosphor, and a red phosphor, and light intensity is not lowered. It can have high thermal stability.

6 is a view showing a third embodiment of a light emitting device package in which a light emitting device is disposed.

The light emitting device package 500 according to the embodiment is a flip chip type light emitting device package, the body 510 including a cavity, and the first lead frames 521 and second installed on the body 510. The lead frame 522 and the light emitting device 200 according to the above-described embodiments installed on the body 510 and electrically connected to the first lead frame 521 and the second lead frame 522, And a molding part 550 formed in the cavity.

The body 510 may be formed of a silicon material, a synthetic resin material, or a metal material. When the body 510 is made of a conductive material such as a metal material, although not shown, an insulating layer is coated on the surface of the body 510 to prevent electrical shorts between the first and second lead frames 521 and 522. Can.

The first lead frame 521 and the second lead frame 522 are electrically separated from each other, and supplies current to the light emitting device 200. Further, the first lead frame 521 and the second lead frame 522 may reflect light generated from the light emitting device 200 to increase light efficiency, and heat generated from the light emitting device 200 may be externally applied. It can also be discharged.

The light emitting device 200 may be electrically connected to the first lead frame 521 and the second lead frame 522 by a ball-shaped solder 540.

The molding unit 550 may surround and protect the light emitting device 200. In addition, on the molding part 550, the phosphor 560 is conformally coated in a separate layer from the molding part 550. In this structure, the phosphor 560 is distributed, and the wavelength of light emitted from the light emitting device 200 can be converted in all regions where light from the light emitting device package 500 is emitted.

Light in the first wavelength region emitted from the light emitting device 200 is excited by the phosphor 560 to be converted into light in the second wavelength region, while the light in the second wavelength region passes through a lens (not shown) The optical path can be changed.

The above-described light emitting device package 500 may implement white light from a light emitting device that emits light in the blue region by using a silicate-based yellow phosphor, a nitride-based green phosphor, and a red phosphor, and the thermal intensity is not degraded and high thermal It can have stability.

7 is a view illustrating a fourth embodiment of a light emitting device package in which light emitting devices are disposed. In this embodiment, a COB (Chip on Board) type light emitting device package is illustrated.

The light emitting device package 600 according to the present embodiment includes a base metal 610, an insulating layer 615, first and second lead frames 621 and 622, and a dam 645. The light emitting device 200 is fixed through the solder 640 on the base metal 610, and the light emitting device 200 may be electrically connected to the first and second lead frames 621 and 622 through a wire 630. have.

The first and second lead frames 621 and 622 are insulated from the base metal 610 through the insulating layer 615, and the molding unit 680 surrounding the light emitting device 200 may include a phosphor. The dam 645 may fix the edge of the molding part 680 on the first and second lead frames 621 and 622. The phosphor may be included in the molding part 680 or may be disposed on the light emitting device 200 by conformal coating.

The above-described light emitting device package 600 may implement white light from a light emitting device that emits light in the blue region using a yellow phosphor of a sillikety series, a green phosphor of a nitride series, and a red phosphor, and light intensity is not deteriorated. It can have high thermal stability.

8 is a view illustrating a fifth embodiment of a light emitting device package in which light emitting devices are disposed. In the light emitting device package according to the present embodiment, light emitting devices are illustrated in two reflective cups, respectively.

The light emitting device package 700 includes a body 710, a first reflective cup 722, a second reflective cup 724, a connecting portion 726, light emitting devices 200a, 200b, a Zener diode 750, And wires 751 to 759.

The body 710 is at least one of a resin material such as polyphthalamide (PPA), silicone (Si), metal material, photo sensitive glass (PSG), sapphire (Al ₂ O ₃ ), and printed circuit board (PCB). Can be formed. Preferably, the body 710 may be made of a resin material such as polyphthalamide (PPA).

The body 710 may be formed of a conductive material. When the body 710 is a material having electrical conductivity, an insulating film (not shown) is formed on the surface of the body 710 so that the body 710 has a first reflective cup 722, a second reflective cup 724, and a connecting portion It can be configured to prevent electrical short (726).

The shape of the upper surface 706 of the body 710 as viewed from above may have various shapes such as a triangle, a square, a polygon, and a circular shape according to the use and design of the light emitting device package 700.

When the light emitting device package 700 according to the present embodiment can be used for an edge type backlight unit (BLU), and when applied to a portable flashlight or household lighting, the body 710 is a portable flashlight or household It can be changed to a size and shape that is easy to embed in the lighting.

The body 710 has a cavity (705, hereinafter referred to as "body cavity") composed of a side 702 and a bottom 703 with an open top.

The body cavity 705 may be formed in a cup shape, a concave container shape, or the like, and the side 702 of the body cavity 705 may be perpendicular to or inclined with respect to the floor 703.

The shape of the body cavity 705 as viewed from above may be circular, elliptical, or polygonal (eg, square). The edge of the body cavity 705 may be curved. The shape of the body cavity 705 as viewed from above may be an octagonal shape as a whole, and the side surface 702 of the body cavity 705 may be divided into eight faces, and the area of the first faces is the second face. It can be smaller than the area. Here, the first surfaces are side surfaces of the body cavity 705 facing each corner of the body 710, and the second surface may be a surface between the first surfaces.

The first reflective cup 722 and the second reflective cup 724 may be disposed spaced apart from each other in the body 710 under the bottom 703 of the body cavity 705. The first reflective cup 722 may have a structure in which an upper portion recessed from the bottom surface of the body cavity 705 is opened.

For example, the bottom 703 of the body cavity 705 may have a first cavity 762 with an open top and side and bottom, and the first reflective cup 722 to be disposed within the first cavity 762 Can.

The second reflective cup 724 may have a structure in which an upper portion recessed from the bottom surface of the body cavity 705 is opened apart from the first cavity 762. For example, the bottom 703 of the body cavity 705 may have a second cavity 764 having an open top and side surfaces and a bottom, and the second reflective cup 724 is disposed in the second cavity 764 Can be. At this time, the second cavity 764 may be spaced apart from the first cavity 762.

A portion of the bottom 703 of the body cavity 705 is positioned between the first reflection cup 722 and the second reflection cup 724, and the first reflection cup 722 and the first reflection cup 722 are formed by a portion of the bottom 703. 2 The reflective cups 724 may be spaced apart and isolated.

The shapes of the first cavity 762 and the second cavity 764 viewed from above may be formed in a cup shape, a concave container shape, etc., and each side surface may be vertical or inclined with respect to each floor.

At least a portion of each of the first reflective cup 722 and the second reflective cup 724 may penetrate the body 710 and be exposed outside the body 710. Since at least a portion of the first reflective cup 722 and the second reflective cup 724 is exposed outside the body 710, the body generates heat generated from the first light emitting device 200a and the second light emitting device 200b. 710) It is possible to improve the efficiency of emitting to the outside.

For example, one end 742 of the first reflective cup 722 may be exposed through the first side of the body 710. In addition, one end 744 of the second reflective cup 724 may be exposed through the second side of the body 710. Here, the second side may be a side facing the first side.

The first reflective cup 722 and the second reflective cup 724 may be made of a metal material, for example, silver, gold, or copper, and may be a plated metal material. The first reflective cup 722 and the second reflective cup 724 are made of the same material as the body 710 and may be integral with the body 710. Alternatively, the first reflective cup 722 and the second reflective cup 724 are different materials from the body 710 and may not be integral with the body 710. The first reflective cup 722 and the second reflective cup 724 may be symmetrical to each other in shape and size based on the connection portion 726. The connection portion 726 is formed to be spaced apart from the first reflective cup 722 and the second reflective cup 724 inside the body 710 below the bottom surface of the body cavity 705, respectively. The connection portion 726 may be made of a conductive material capable of passing electricity.

As illustrated, the connection part 726 may be disposed between the first reflective cup 722 and the second reflective cup 724. For example, the connection portion 726 may be disposed inside the bottom of the body cavity 705 adjacent to the third side of the body cavity 705 between the first reflective cup 722 and the second reflective cup 724.

At least a portion of the connection portion 726 may be exposed through the body 710. For example, one end of the connection portion 726 may be exposed through the third side of the body cavity 705. Here, the third side of the body 710 is one side perpendicular to the first side and the second side of the body 710.

The Zener diode 750 is disposed on one of the first reflective cup 722 and the second reflective cup 724 to improve the withstand voltage of the light emitting device package 700. The Zener diode 750 may be mounted on the upper surface 722-1 of the second reflective cup 724.

Phosphors may be respectively filled in the first reflective cup 722 and the second reflective cup 724, respectively, when light of the same wavelength range is emitted from the first light emitting device 200a and the second light emitting device 200b. Phosphors of the same composition may be filled in the 1st reflective cup 722 and the 2nd reflective cup 724, and the phosphors may be disposed on the respective light emitting devices 200a and 200b by conformal coating.

The above-described light emitting device package 700 may implement white light from a light emitting device that emits light in the blue region by using a silicate-based yellow phosphor, a nitride-based green phosphor, and a red phosphor, and the thermal intensity is not reduced and high thermal It can have stability.

A plurality of light emitting device packages according to an embodiment are arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, and the like, which are optical members, may be disposed on an optical path of the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a light unit. Another embodiment may be implemented as a display device, an indication device, a lighting system including the semiconductor light emitting device or the light emitting device package described in the above-described embodiments, for example, the lighting system may include a lamp, a street light .

Hereinafter, a backlight unit and a lighting device will be described as an embodiment of the lighting system in which the above-described light emitting device or light emitting device package is disposed.

9 is a view showing an embodiment of an image display device including a light emitting device package.

As illustrated, the image display device 900 according to the present embodiment is a light source module, a reflector 920 on the bottom cover 910, and light disposed in front of the reflector 920 and emitted from the light source module The light guide plate 940 for guiding the front of the image display device, the first prism sheet 950 and the second prism sheet 960 disposed in front of the light guide plate 940, and the second prism sheet 960 It comprises a panel 970 disposed in front and a color filter 980 disposed in front of the panel 970.

The light source module includes a light emitting device package 935 on the circuit board 930. Here, the circuit board 930 may be a PCB or the like, the light emitting device package 935 is as described above.

In addition to the edge type backlight unit illustrated in FIG. 9, the image display device may be a direct type backlight unit.

The light emitting device package used in the above-described image display device may implement white light from a light emitting device that emits light in the blue region using a silicate-based yellow phosphor, a nitride-based green phosphor, and a red phosphor, and the light intensity is lowered. And can have high thermal stability.

10 is a view showing an embodiment of a lighting device including a light emitting device package.

The lighting device according to the present embodiment may include a cover 1100, a light source module 1200, a heat radiator 1400, a power supply unit 1600, an inner case 1700, and a socket 1800. In addition, the lighting device according to the embodiment may further include any one or more of the member 1300 and the holder 1500, the light source module 1200 may include a light emitting device package according to the above-described embodiments. .

The cover 1100 has a shape of a bulb or a hemisphere, is hollow, and may be provided in an open shape. The cover 1100 may be optically coupled to the light source module 1200. For example, the cover 1100 may diffuse, scatter, or excite light provided from the light source module 1200. The cover 1100 may be a kind of optical member. The cover 1100 may be combined with the heat sink 1400. The cover 1100 may have a coupling portion coupled to the heat radiator 1400.

A milky white coating may be coated on the inner surface of the cover 1100. The milky white paint may include a diffusion material that diffuses light. The surface roughness of the inner surface of the cover 1100 may be greater than the surface roughness of the outer surface of the cover 1100. This is for light from the light source module 1200 to be sufficiently scattered and diffused to be emitted to the outside.

The material of the cover 1100 may be glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate has excellent light resistance, heat resistance, and strength. The cover 1100 may be transparent so that the light source module 1200 is visible from the outside, and may be opaque. The cover 1100 may be formed through blow molding.

The light source module 1200 may be disposed on one surface of the heat radiator 1400. Thus, heat from the light source module 1200 is conducted to the heat sink 1400. The light source module 1200 may include a light emitting device package 1210, a connection plate 1230, and a connector 1250.

The phosphor may be disposed on at least one side of the cover 1100 by a coating method or the like, or may be disposed in the light emitting device package 1210 in the light source module 1200.

The member 1300 is disposed on the upper surface of the heat sink 1400, and has a plurality of light emitting device packages 1210 and guide grooves 1310 into which the connector 1250 is inserted. The guide groove 1310 corresponds to the substrate and connector 1250 of the light emitting device package 1210.

The surface of the member 1300 may be coated or coated with a light reflective material. For example, the surface of the member 1300 may be coated or coated with a white paint. The member 1300 reflects light that is reflected on the inner surface of the cover 1100 and returns to the direction of the light source module 1200 again in the direction of the cover 1100. Therefore, it is possible to improve the light efficiency of the lighting device according to the embodiment.

The member 1300 may be made of an insulating material, for example. The connection plate 1230 of the light source module 1200 may include an electrically conductive material. Therefore, electrical contact may be made between the heat sink 1400 and the connection plate 1230. The member 1300 may be formed of an insulating material to block electrical shorts between the connection plate 1230 and the heat sink 1400. The heat radiator 1400 receives heat from the light source module 1200 and heat from the power supply unit 1600 to radiate heat.

The holder 1500 closes the storage groove 1719 of the insulating portion 1710 of the inner case 1700. Therefore, the power supply unit 1600 accommodated in the insulating portion 1710 of the inner case 1700 is sealed. The holder 1500 has a guide projection 1510. The guide protrusion 1510 has a hole through which the protrusion 1610 of the power supply unit 1600 passes.

The power supply unit 1600 processes or converts an electrical signal provided from the outside and provides it to the light source module 1200. The power supply unit 1600 is accommodated in the storage groove 1719 of the inner case 1700 and is sealed inside the inner case 1700 by the holder 1500. The power supply unit 1600 may include a protrusion 1610, a guide 1630, a base 1650, and an extension 1670.

The guide portion 1630 has a shape protruding from the side of the base 1650 to the outside. The guide part 1630 may be inserted into the holder 1500. A plurality of parts may be disposed on one surface of the base 1650. The plurality of components include, for example, a DC converter that converts AC power provided from an external power source into DC power, a driving chip that controls the driving of the light source module 1200, and ESD for protecting the light source module 1200. (ElectroStatic discharge) may include a protection element, but is not limited thereto.

The extension 1670 has a shape protruding from the other side of the base 1650 to the outside. The extension portion 1670 is inserted into the connection portion 1750 of the inner case 1700 and receives an electrical signal from the outside. For example, the extension portion 1670 may be provided equal to or smaller than the width of the connection portion 1750 of the inner case 1700. Each end of the "+ wire" and the "- wire" is electrically connected to the extension portion 1670, and the other end of the "+ wire" and "- wire" can be electrically connected to the socket 1800. .

The inner case 1700 may include a molding part together with the power supply part 1600. The molding part is a part in which the molding liquid is hardened, so that the power supply unit 1600 can be fixed inside the inner case 1700.

The light emitting device package used in the lighting device can implement white light from a light emitting device that emits light in the blue region by using a silicate-based yellow phosphor, a nitride-based green phosphor, and a red phosphor, and light intensity is not reduced. It may have high thermal stability, and the half-width of light emitted by the excitation of the first to third phosphors is 110 nanometers or more.

The embodiments have been mainly described above, but this is merely an example and does not limit the present invention, and those of ordinary skill in the art to which the present invention pertains are not exemplified above in the range that does not depart from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be implemented by modification. And differences related to these modifications and applications should be construed as being included in the scope of the invention defined in the appended claims.

100, 200: light emitting element 120, 220: light emitting structure
300, 400, 500, 600, 700: Light emitting device package
900: video display device

Claims (13)

A silicate-based first phosphor that emits light in a first wavelength region;
A nitride-based second phosphor that emits light in the second wavelength region; And
It includes a third phosphor of the night light series that emits light in the third wavelength region,
The half-width of the light emitted by the first to third phosphors is 110 nanometers or more,
The silicate-based first phosphor is a yellow phosphor having a (Ba, Sr) ₂ SiO ₄ :Eu composition,
The nitride-based second phosphor is a green phosphor having a La ₃ Si ₆ N ₁₁ :Ce composition,
The nitride-based third phosphor is a red phosphor having a (Sr, Ca)AlSiN ₃ :Eu composition,
The first phosphor, the second phosphor, and the third phosphor were each synthesized at 68:30:30:2% by weight. delete delete delete delete According to claim 1,
The light emitted from the first phosphor, the second phosphor, and the third phosphor forms white light, and the chromaticity coordinates of green light constituting the white light are CIEx: 0.296 to 0.316, and CIEy: 0.606 to 0.626. According to claim 1,
The light emitted from the first phosphor, the second phosphor, and the third phosphor forms white light, and the chromaticity coordinates of the red light constituting the white light are CIEx: 0.624 to 0.644, and CIEy: 0.322 to 0.342. According to claim 1,
The light emitted from the first phosphor, the second phosphor, and the third phosphor forms white light, and the chromaticity coordinates of the blue light constituting the white light are CIEx: 0.142 to 0.162, and CIEy: 0.044 to 0.064. A first electrode and a second electrode electrically separated from each other;
At least one light emitting element that is electrically connected to the first electrode and the second electrode and emits light in a first wavelength region; And
It is excited by light in the blue wavelength region emitted from the light emitting device to emit light in the second wavelength region and emits light in the silicate-based first phosphor and the second wavelength region to emit light in the first wavelength region. And a nitride-based second phosphor, and a nightlight-based third phosphor that emits light in a third wavelength region.
The half-width of light emitted from the first to third phosphors includes phosphors of 110 nanometers or more,
The silicate-based first phosphor is a yellow phosphor having a (Ba, Sr) ₂ SiO ₄ :Eu composition,
The nitride-based second phosphor is a green phosphor having a La ₃ Si ₆ N ₁₁ :Ce composition,
The nitride-based third phosphor is a red phosphor having a (Sr, Ca)AlSiN ₃ :Eu composition,
The first phosphor, the second phosphor, and the third phosphor are each a light emitting device package synthesized to 68:30:2% by weight. delete delete delete delete

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