KR20180010770A - Light emitting device, method of manufacturing the same and lighting apparatus - Google Patents

Abstract

Embodiments relate to a light emitting device, a manufacturing method thereof, a light emitting device package, and a lighting device. According to an embodiment of the present invention, the light emitting device can comprise: a first conductive first semiconductor layer (112); a first conductive first GaN layer (115) having a first thickness (T1) on the first conductive first semiconductor layer (112); an active layer (114) on the first conductive first GaN layer (115); a second conductive second GaN layer (118) having a second thickness (T2) on the active layer (114); a second conductive second AlInGaN layer (119) on the second conductive second GaN layer (118); and a second conductive second semiconductor layer (116) on the second conductive second AlInGaN layer (119). According to the present invention, it is possible to alleviate or eliminate a droop phenomenon.

Description

TECHNICAL FIELD [0001] The present invention relates to a light emitting device, a method of manufacturing the light emitting device,

Embodiments relate to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting device.

Semiconductor devices including compounds such as GaN and AlGaN have many merits such as wide and easy bandgap energy, and can be used variously as light emitting devices, light receiving devices, and various diodes.

Particularly, a light emitting device such as a light emitting diode or a laser diode using a semiconductor material of Group 3-5 or 2-6 group semiconductors can be applied to various devices such as a red, Blue, and ultraviolet rays. By using fluorescent materials or combining colors, it is possible to realize a white light beam with high efficiency. Also, compared to conventional light sources such as fluorescent lamps and incandescent lamps, low power consumption, Speed, safety, and environmental friendliness.

In addition, when a light-receiving element such as a photodetector or a solar cell is manufactured using a semiconductor material of Group 3-5 or Group 2-6 compound semiconductor, development of a device material absorbs light of various wavelength regions to generate a photocurrent , It is possible to use light in various wavelength ranges from the gamma ray to the radio wave region. It also has advantages of fast response speed, safety, environmental friendliness and easy control of device materials, so it can be easily used for power control or microwave circuit or communication module.

Accordingly, the semiconductor device can be replaced with a transmission module of an optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, White light emitting diodes (LEDs), automotive headlights, traffic lights, and gas and fire sensors. In addition, semiconductor devices can be applied to high frequency application circuits, other power control devices, and communication modules.

For example, a light emitting device (Light Emitting Device), which is one of semiconductor devices, is a device in which a group III-V element or a group II-VI element in the periodic table is combined with a pn junction diode in which electric energy is converted into light energy And various colors can be realized by controlling the composition ratio of the compound semiconductor.

However, in the case of a light emitting device using a nitride, many carriers (carriers) are injected at high current injection due to the uneven symmetry of injection efficiency and concentration of electrons and holes (for example, Are not recombined with each other and overflow, resulting in a decrease in luminous efficiency such as an efficiency droop.

In the prior art, Mg-doped p-type AlGaN electron blocking layer (EBL) is usually used in order to suppress such an efficiency deterioration. However, when it is used thickly or in order to increase the suppression power, The efficiency of hole injection is adversely affected and there is a problem that the operation voltage and the light output are lowered.

Also, as described above, in the conventional art, the nitride semiconductor usually includes many defects because it uses a different substrate, and due to the strong internal electric field, low mobility of holes and low concentration, a droop phenomenon necessarily occurs .

However, in the light emitting device, the current density used differs depending on the model group of the applied product, and optimization of droop characteristics is required according to the characteristics of the applied product.

However, there is no technical solution to efficiently control the droop characteristics of the product with low current density such as mobile phone and the product with high current density such as BLU.

One of the problems of the embodiment is to provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting device capable of mitigating or eliminating a droop phenomenon.

One of the solutions to the problems of the embodiment is to provide a light emitting device capable of efficiently controlling the droop type in the growth of the light emitting device so as to be suitable for the model of the low current density application product or the model of the high current density application product, A device package and a lighting device.

The object of the present invention is not limited to the contents described in this item, but an objective technical problem to be solved based on the contents of the entire description of the invention can be described.

A light emitting device according to an embodiment includes a first conductive type first semiconductor layer 112; A first conductive type first GaN layer 115 of a first thickness T1 on the first conductive type first semiconductor layer 112; An active layer 114 on the first conductive type first GaN layer 115; A second conductive type second GaN layer 118 having a second thickness T2 on the active layer 114; A second conductive AlInGaN-based semiconductor layer 119 on the second conductive type second GaN layer 118; And a second conductive type second semiconductor layer (116) on the second conductive type second AlInGaN-based semiconductor layer (119).

The method of manufacturing a light emitting device according to an embodiment of the present invention includes forming a first conductive type first GaN layer 115 having a first thickness T1 on a first conductive type first semiconductor layer 112; Forming an active layer (114) on the first conductive type first GaN layer (115); Forming a second conductive type second GaN layer (118) having a second thickness (T2) on the active layer (114); Forming a second conductive type second AlInGaN-based semiconductor layer (119) on the second conductive type second GaN layer (118); And a second conductive type second semiconductor layer (116) on the second conductive type second AlInGaN-based semiconductor layer (119).

The lighting apparatus according to the embodiment may include a light emitting unit having the light emitting element.

Embodiments can provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting device capable of mitigating or eliminating a droop phenomenon.

Embodiments relate to a light emitting device capable of efficiently controlling a droop shape in a light emitting device growth to a model of a low current density application product or a model of a high current density application product, a method of manufacturing a light emitting device, a light emitting device package, Can be provided.

The technical effect of the embodiment is not limited to the contents described in this item, but the technical effect can be described based on the contents of the entire description of the invention.

1 is a planar projection view of a light emitting device according to an embodiment.
2 is a cross-sectional view of a light emitting device according to an embodiment.
3 is a partially enlarged cross-sectional view of a light emitting device according to an embodiment.
4 is a partial bandgap diagram of a light emitting device according to an embodiment.
5 is an efficiency droop control data in a light emitting device according to an embodiment.
6 to 16 are process sectional views of a method of manufacturing a light emitting device according to an embodiment.
17 is a cross-sectional view of a light emitting device package according to an embodiment.
18 is a perspective view of a lighting device according to an embodiment.

In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under" the substrate, each layer Quot; on "and" under "are intended to include both" directly "or" indirectly " do. In addition, the criteria for the top, bottom, or bottom of each layer will be described with reference to drawings, but the embodiment is not limited thereto.

For example, the light emitting device of the embodiment can be applied to a horizontal light emitting device, a vertical light emitting device, a via hole type vertical light emitting device, and the like.

Specifically, the horizontal light emitting element is a light emitting element in which the electrode layer is arranged in one direction of the epi layer, and the vertical light emitting element is a light emitting element in which the electrode layer is arranged in both directions of the epi layer.

The via hole type light emitting device is a light emitting device in which a first electrode layer is disposed on the upper side of the epi layer and a second electrode layer disposed on the lower side of the epi layer is connected to the epi layer through a via hole formed in the epi layer.

The following description of the via hole type vertical light emitting device will be described with reference to the drawings, but the embodiment is not limited thereto.

(Example)

1 is a plan view of a light emitting device 100 according to an embodiment, and FIG. 2 is an enlarged cross-sectional view of a first embodiment taken along the line A-A 'in FIG. The configurations shown in FIG. 1 are also shown in FIG. 2, and will be described with reference to FIG.

Referring to FIG. 2, the light emitting device 100 includes a light emitting structure layer 110, a first electrode layer 150, a second electrode layer 130, a contact layer 160, an insulating layer 140, A passivation layer 170, a pad electrode 180, and a lower electrode 159.

For example, the light emitting device 100 according to the embodiment includes a first conductive type first semiconductor layer 112, a second conductive type second semiconductor layer 112 disposed under the first conductive type first semiconductor layer 112, And a light emitting structure layer 110 including an active layer 114 disposed between the first conductive type first semiconductor layer 112 and the second conductive type second semiconductor layer 116, .

The second conductive type second semiconductor layer 116 is formed on the bottom surface of the second conductive type second semiconductor layer 116 and the active layer 114, A plurality of holes H for exposing a part of the first conductive type semiconductor layer 112 and a plurality of holes H for exposing a part of the first conductive type semiconductor layer 116, A first electrode layer 150 disposed on the lower side of the contact layer 160 and electrically connected to the second conductive type second semiconductor layer 116, And a second electrode layer 130 electrically connected to the second electrode layer 130.

The second electrode layer 130 may include a second contact electrode 132, a first reflective layer 134, and a capping layer 136. The second electrode layer 130 may include a second electrode layer 130, And the supplied power can be supplied to the second semiconductor layer 116 of the second conductivity type.

The contact layer 160 may extend from the plurality of holes H through the active layer 114 to expose a portion of the first conductive type first semiconductor layer 112 to form a first electrode layer 150 ) Direction.

The upper surface of the contact layer 160 is disposed higher than the active layer 114 and the lower surface of the contact layer 160 is disposed lower than the second conductive type second semiconductor layer 116 . The contact layer 160 may be formed of a conductive metal material or a semiconductor material.

The first electrode layer 150 may include a diffusion barrier layer 154 disposed on a side surface of the contact layer 160 and a bonding layer 156 disposed under the diffusion barrier layer 154 and under the bonding layer 156. And may include a deployed support member 158.

The diffusion barrier layer 154 may be in contact with a side surface of the contact layer 160 and the contact layer 156 may contact the contact layer 160 to form a first electrode layer 150 and the contact layer 160 can be enlarged.

Accordingly, according to the embodiment, the contact resistance between the contact layer 160 and the first electrode layer 150 is reduced, thereby preventing an increase in the operating voltage, thereby improving the light output Po and improving the electrical reliability.

According to the embodiment, the luminous flux can be improved by improving the current injection efficiency according to the increase of the contact area between the contact layer 160 and the first electrode layer 150.

In the embodiment, the lower region of the contact layer 160 may be inclined to the side surface to widen the surface area, and the diffusion prevention layer 154 may contact the side surface of the contact layer 160, The rise of the operating voltage can be prevented by reducing the resistance.

According to an embodiment of the present invention, the current injection efficiency between the first electrode layer 150 and the contact layer 160 is improved by widening the contact area between the inclined side surface of the contact layer 160 and the diffusion prevention layer 154, Can be improved.

Embodiments may include a first channel layer 120 disposed between an upper side of the contact layer 160 and the first conductive type first semiconductor layer 112. The first channel layer 120 may be disposed between the upper surface of the contact layer 160 and the active layer 116 and the second conductive semiconductor layer 116. Thus, the first channel layer 120 can prevent a short circuit between the contact layer 160 and the active layer 114 and the second conductive type second semiconductor layer 116.

In an embodiment, the reflectivity of the first channel layer 120 may exceed 50%. For example, the first channel layer 120 may include at least one material selected from SiO _x , SiO ₂ , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ and TiO ₂ . , Or may be formed in such a form that a reflective material is mixed with such a material.

For example, the first channel layer 120 is SiO _x, SiO _2, SiO _x N _y, Si ₃ N _4, Al ₂ O _3, to any one or more materials selected from among TiO ₂ Ag, Ni, Al, Or a mixture of at least one of Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au or Hf.

According to the embodiment, the first channel layer 120 including the reflective material is disposed on the side surface of the contact layer 160 functioning as a contact layer, thereby preventing light absorption by the contact layer 160 The light extraction efficiency can be improved and the light flux can be improved.

The contents of the reference numerals of the configuration shown in FIG. 2 will be described in the following manufacturing method.

Hereinafter, technical solutions and technical effects that can solve the main technical problems of the embodiments will be described with reference to Figs. 3 and 4. Fig.

FIG. 3 is an enlarged cross-sectional view (E) of a light emitting device according to an embodiment, and FIG. 4 is a bandgap diagram for a portion of a light emitting device according to an embodiment. In this case, the arrangements of the respective components in FIGS. 3 and 4 are shown in a state in which the arrangement of each layer in FIG. 2 is rotated 180 degrees. 3 and 4, the first conductive type first semiconductor layer 112 is disposed below the active layer 114, and the second conductive type second semiconductor layer 116 is disposed below the active layer 114. In addition, (See FIG.

3 and 4, the light emitting device 100 according to the embodiment includes a first conductive semiconductor layer 112, a first conductive type first GaN layer 115, an active layer 114, The second conductive type second AlInGaN-based semiconductor layer 119, and the second conductive type second semiconductor layer 116. The second conductive type second AlN GaN-based semiconductor layer 119 may include a second conductive type second GaN layer 118, a second conductive type second AlInGaN-

For example, the light emitting device 100 according to the embodiment includes a first conductive type first semiconductor layer 112 and a first conductive type first semiconductor layer 112 having a first thickness T1, A first conductive type first GaN layer 115, an active layer 114 on the first conductive type first GaN layer 115, and a second conductive type second conductive type layer having a second thickness T2 on the active layer 114. [ 2 GaN layer 118 on the second conductive type second GaN layer 118 and a second conductive type second AlInGaN semiconductor layer 119 on the second conductive type second GaN layer 118. The second conductive type second AlInGaN semiconductor layer 119 The second conductive type second semiconductor layer 116 may be formed on the second conductive type semiconductor layer 116.

The first conductive type first semiconductor layer 112, the active layer 114, and the second conductive type second semiconductor layer 116 may constitute the light emitting structure layer 110. The first conductive type dopant may be an n-type dopant, and the second conductive type dopant may be a p-type dopant, but the present invention is not limited thereto.

The first conductive type first GaN layer 115 and the second conductive type second GaN layer 118 are layers capable of controlling the balance of distribution of charge carriers in the embodiment, Will be described in detail.

The second conductive type second AlInGaN-based semiconductor layer 119 may function as an electron blocking layer to prevent carriers from overflowing. For example, the second conductive type second AlInGaN-based semiconductor layer 119 can prevent electrons from overflowing.

In addition, the embodiment may further include a first conductive AlInGaN-based semiconductor layer 113 between the first conductive type first semiconductor layer 112 and the first conductive type first GaN layer 115 . For example, the first conductive AlInGaN-based semiconductor layer 113 may prevent holes from overflowing.

The embodiment further includes an AlInGaN-based superlattice layer 117 between the first conductive type first GaN layer 115 and the active layer 114 to form a light emitting structure layer (refer to FIG. 6) 110), thereby improving crystal quality.

FIG. 5 is efficiency droop control data in the light emitting device according to the embodiment,

Table 1 below shows data of the thickness (T) and the concentration (C) in five experimental examples (C1 to C5) for efficient droop control in the light emitting device according to the embodiment.

T1 and C1 are thicknesses of the first conductive type first GaN layer 115 and concentration data of the first conductive type dopant, T2 and C2 are thicknesses of the second conductive type second GaN layer 118, Concentration data of the conductive dopant.

T1
(nm) C1
(atoms / cm ²⁾ Experimental Example T2
(nm) C2
(atoms / cm ²⁾ One 5E16 Case 1 20 2E20 25 5E17 Case 2 15 1E20 50 1E18 Case 3 10 5E19 75 5E18 Case 4 5 1E19 100 2E19 Case 5 One 1E18

FIG. 5 shows efficiency droop control data in a light emitting device according to an embodiment, in which the droop characteristic is a first characteristic D1, a second characteristic D2 and a third characteristic D3.

For example, in the case of a model of a product with a low current density such as a mobile phone, the current density is different depending on the model group of the applied product in the light emitting device. Even if the first characteristic (D1) ) Peak is advantageous in terms of light output.

On the other hand, in the high current density product model like BLU, the third characteristic (D3) type in which the droop is low, even though the EQE peak is low, may be preferable.

The second characteristic (D2) is set to indicate the droop characteristic between the low current density application product and the high current density application product.

However, in the prior art, there is no technical solution to efficiently control the droop characteristics of the light emitting device so as to be suitable for a model of a product with a low current density or a model of a product with a high current density.

For example, in the embodiment, considering the low current density application product model, a description will be made of a technique of controlling the first characteristic D1 to be the second characteristic D2, which is a reference based on the droop characteristic in FIG. 5 .

For example, when the third experimental example (Case 3) in Table 1 is the light emitting device showing the droop characteristic that is the second characteristic D2 for the intermediate current density application product, 1 < / RTI > characteristic (D1).

However, when the first characteristic D1 is to be controlled by the first characteristic D1, the first characteristic D1 is related to the low current density product model, and the EQE peak is high and the droop is strong. This is because the overflow of electrons at the high current density ) Is strong or the injection of holes is insufficient.

Thus, according to the embodiment, in order to control the second droop characteristic D2, which is a predetermined reference, to have the first droop characteristic D1 having a relatively low current density, It is possible to control the thickness T1 of the GaN layer 115 to be relatively large and the concentration C1 of the first conductivity type dopant to be relatively high.

For example, when the third experimental example (Case 3) in Table 1 is the light emitting device showing the droop characteristic that is the second characteristic D2 for the intermediate current density application product, (C4) or the fifth experiment (C5) in order to control the light emitting device exhibiting the droop characteristics of the first characteristic (D1).

For example, in order to control the second droop property D2 to the first droplet characteristic D1, the thickness T1 of the first conductive type first GaN layer 115 is relatively thick, Can be controlled to be relatively high.

Specifically, the thickness of the first conductive type first GaN layer and the concentration of the first conductive type dopant, which represent the reference droop characteristics D2, are set to be equal to the first reference thickness (for example, 50 nm) 2 reference levels ^{(e.g., 1E18 (atoms / cm 2)} ) If, in order to control so as to have a second droop characteristic first droop characteristic of the low current density (D2) (D1) being the reference, wherein The first conductive type first GaN layer 115 has a thickness T1 larger than a first reference thickness of the first conductive type first GaN layer 115, The concentration C1 of the first conductivity type of the dopant can be controlled to be higher than the first reference concentration of the first conductivity type first GaN layer.

In addition, the thickness T2 of the second conductive type second GaN layer 118 can be controlled to be relatively thin, and the concentration C2 of the second conductive type dopant can be controlled to be relatively low.

Specifically, when the thickness of the second conductivity type second GaN layer and the concentration of the second conductivity type dopant, which represent the second drop characteristics (D2) as the reference, are the second reference thickness and the second reference concentration, (T2) of the second conductive type second GaN layer (118) is controlled to have a first droop property (D1) of a lower current density than the reference second droop characteristic (D2) (C2) of the second conductivity type of the second conductivity type dopant of the second conductivity type second GaN layer 118 is set to be smaller than a second reference thickness (for example, 10 nm) of the second conductivity type second GaN layer Can be controlled to be lower than the second reference concentration (5E19 (atoms / cm ² )) of the second conductive type second GaN layer.

In Table 1, when the third experimental example (Case 3) is the second droop characteristic (D2) for the intermediate current density application product, the third characteristic (D3) for the higher current density application product is the droop characteristic (C2) or the first experimental example (C2) can be controlled in order to control the light emitting device to emit light.

For example, in order to control the second droop characteristic D2 to the third droop characteristic D3, the thickness T1 of the first conductive type first GaN layer 115 is relatively thin, Can be controlled to be relatively low.

Specifically, when the thickness of the first conductive type first GaN layer and the concentration of the first conductive type dopant, which represent the second droop characteristic D2 as a standard, are the first reference thickness and the second reference concentration, The thickness Tl of the first conductive type first GaN layer 115 may be set to be greater than the thickness Tl of the first conductive type GaN layer 115 in order to control the third droop characteristic D3 having a higher current density than the reference second droop characteristic D2. Type first GaN layer 115 is less than the first reference thickness of the first conductive type first GaN layer 115 and the concentration C1 of the first conductive type of the first conductive type dopant of the first conductive type first GaN layer 115 is greater than the concentration Layer can be controlled to be lower than the first reference concentration.

In addition, the thickness T2 of the second conductive type second GaN layer 118 can be controlled to be relatively large, and the concentration C2 of the second conductive type dopant can be controlled to be relatively high.

Specifically, when the thickness of the second conductivity type second GaN layer and the concentration of the second conductivity type dopant, which represent the second drop characteristics (D2) as the reference, are the second reference thickness and the second reference concentration, (T2) of the second conductivity type second GaN layer (118) to the second conductivity type (D3) so as to have a third droop characteristic (D3) of a higher current density than the second droop characteristic (D2) (C2) of the second conductivity type of the second conductivity type dopant of the second conductivity type second GaN layer (118) to a second reference conductivity of the second conductivity type second GaN layer Layer can be controlled to be higher than the second reference concentration.

In the embodiment, when a thick film is grown in a doping state that is too high, an abnormality may occur in the film quality. In this case, various film-restoring conditions such as n-type doping (such as Si-doping) employing a doping method of a very low concentration of Al or a method of using a doping method of delta- Can be maintained.

In addition, in the case of p-type doping (such as Mg doping), the quality of the film quality can be maintained by using an In treatment, but the present invention is not limited thereto.

Embodiments can provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting device capable of mitigating or eliminating a droop phenomenon by controlling a balance of distribution of charge carriers.

The embodiment can control the balance of the charge carriers by controlling the charge carrier balance in the light emitting device growth and the final structure so that the droop type can be efficiently controlled in conformity with the model of the low current density application product or the model of the high current density application product A light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting device.

Hereinafter, a method of manufacturing a light emitting device according to an embodiment will be described with reference to FIGS. 6 to 16, but the manufacturing method is not limited to the following description.

First, the light emitting structure layer 110 may be formed on the growth substrate 105 as shown in FIG. The light emitting structure layer 110 may include a first conductive type first semiconductor layer 112, an active layer 114, and a second conductive type second semiconductor layer 116.

The growth substrate 105 may be loaded into the growth equipment, and formed thereon in the form of a layer or a pattern using a compound semiconductor of group II to VI elements.

The growth equipment may be an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporator sputtering, metal organic chemical vapor deposition, etc. may be employed and are not limited to such equipment.

The growth substrate 105 may be a conductive substrate, an insulating substrate, or the like. For example, the growth substrate 105 may be selected from the group consisting of a sapphire substrate (Al ₂ O ₃ ), GaN, SiC, ZnO, Si, GaP, InP, Ga ₂ O ₃ , .

A buffer layer (not shown) may be formed on the growth substrate 105. AlN, AlGaN, InGaN, InN, InAlGaN, AlInN (AlN), InGaN, AlN, InN, InN, InN, , AlGaAs, GaP, GaAs, GaAsP, and AlGaInP.

An undoped semiconductor layer (not shown) may be formed on the buffer layer. The undoped semiconductor layer may be formed of an undoped GaN-based semiconductor, but the n-type doping element Type semiconductor layer by diffusion of the n-type semiconductor layer, but the present invention is not limited thereto.

FIG. 7A is an enlarged cross-sectional view (E) of a light-emitting device according to an embodiment, and FIG. 7B is a partial bandgap diagram of a light-emitting device according to an embodiment.

7A and 7B, the light emitting device 100 according to the embodiment includes a first conductive type first semiconductor layer 112, a first conductive type first GaN layer 115, an active layer 114, The second conductive type second AlInGaN-based semiconductor layer 119, and the second conductive type second semiconductor layer 116. The second conductive type second AlN GaN-based semiconductor layer 119 may include a second conductive type second GaN layer 118, a second conductive type second AlInGaN-

For example, the light emitting device 100 according to the embodiment includes a first conductive type first semiconductor layer 112 and a first conductive type first semiconductor layer 112 having a first thickness T1, A first conductive type first GaN layer 115, an active layer 114 on the first conductive type first GaN layer 115, and a second conductive type second conductive type layer having a second thickness T2 on the active layer 114. [ 2 GaN layer 118 on the second conductive type second GaN layer 118 and a second conductive type second AlInGaN semiconductor layer 119 on the second conductive type second GaN layer 118. The second conductive type second AlInGaN semiconductor layer 119 The second conductive type second semiconductor layer 116 may be formed on the second conductive type semiconductor layer 116.

The first conductive type first semiconductor layer 112 may include a compound semiconductor of a group III-V element doped with the first conductive type dopant, such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. For example, the first conductive type first semiconductor layer 112 may be _{In x Al y Ga 1 -x- y} N (0≤≤x≤≤1, 0≤≤y≤≤1, 0≤≤x + y < = 1).

The first conductive type first semiconductor layer 112 may be an n-type semiconductor layer, and the first conductive type dopant may include n-type dopants such as Si, Ge, Sn, Se, and Te.

The first conductive type first semiconductor layer 112 may be formed as a single layer or a multilayer and may include two layers of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, May alternatively be arranged in a superlattice structure.

The embodiment may include a first conductive AlInGaN-based semiconductor layer 113 on the first conductive type first semiconductor layer 112. The band gap energy level of the first conductive type first AlInGaN-based semiconductor layer 113 may be greater than the band gap energy level of the first conductive type first semiconductor layer 112. Accordingly, the first conductive AlInGaN-based semiconductor layer 113 can prevent a hole from overflowing.

The first conductive type first GaN layer 115 may be formed on the first AlInGaN-based semiconductor layer 113 of the first conductivity type.

The embodiment includes an AlInGaN-based superlattice layer 117 on the first conductive type first GaN layer 115 to block dislocations propagated from the substrate 105 to the light emitting structure layer 110 to improve crystal quality .

The active layer 114 may include a single quantum well structure, a multiple quantum well structure, a quantum wire structure, or a quantum dot structure. The active layer 114 may be formed with a periodic structure of a well layer and a barrier layer using a compound semiconductor material of group III-V elements.

The well layer comprises a semiconductor layer having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤≤x≤≤1, 0≤≤y≤≤1, 0≤≤x + y≤≤1) and wherein the barrier layer is a semiconductor layer having a compositional formula of _{in x Al y Ga 1 -x- y} N (0≤≤x≤≤1, 0≤≤y≤≤1, 0≤≤x + y≤≤1) As shown in FIG. The band gap of the barrier layer may be formed of a material higher than a band gap of the well layer.

 Accordingly, the active layer 114 includes at least one period of, for example, the period of the InGaN well layer / GaN barrier layer, the period of the InGaN well layer / AlGaN barrier layer, and the period of the InGaN well layer / InGaN barrier layer can do.

A second conductive type second GaN layer 118 may be formed on the active layer 114.

5, in order to control the second droop characteristic D2, which is a predetermined reference, to have a first droop characteristic D1 having a relatively low current density in the embodiment, 1 GaN layer 115 is relatively thick and the concentration C1 of the first conductivity type dopant is relatively high.

Specifically, the thickness of the first conductive type first GaN layer and the concentration of the first conductive type dopant, which represent the reference droop characteristics D2, are set to be equal to the first reference thickness (for example, 50 nm) 2 reference levels ^{(e.g., 1E18 (atoms / cm 2)} ) If, in order to control so as to have a second droop characteristic first droop characteristic of the low current density (D2) (D1) being the reference, wherein The first conductive type first GaN layer 115 has a thickness T1 larger than a first reference thickness of the first conductive type first GaN layer 115, The concentration C1 of the first conductivity type of the dopant can be controlled to be higher than the first reference concentration of the first conductivity type first GaN layer.

In addition, the thickness T2 of the second conductive type second GaN layer 118 can be controlled to be relatively thin, and the concentration C2 of the second conductive type dopant can be controlled to be relatively low.

Specifically, when the thickness of the second conductivity type second GaN layer and the concentration of the second conductivity type dopant, which represent the second drop characteristics (D2) as the reference, are the second reference thickness and the second reference concentration, (T2) of the second conductive type second GaN layer (118) is controlled to have a first droop property (D1) of a lower current density than the reference second droop characteristic (D2) (C2) of the second conductivity type of the second conductivity type dopant of the second conductivity type second GaN layer 118 is set to be smaller than a second reference thickness (for example, 10 nm) of the second conductivity type second GaN layer Can be controlled to be lower than the second reference concentration (5E19 (atoms / cm ² )) of the second conductive type second GaN layer.

On the other hand, in order to control the second droop characteristic D2 for the intermediate current density application product with the light emitting device showing the droop characteristic which is the third characteristic D3 for the higher current density application product, It is possible to control the process as in the first experimental example (C2).

For example, in order to control the second droop characteristic D2 to the third droop characteristic D3, the thickness T1 of the first conductive type first GaN layer 115 is relatively thin, Can be controlled to be relatively low.

Specifically, when the thickness of the first conductive type first GaN layer and the concentration of the first conductive type dopant, which represent the second droop characteristic D2 as a standard, are the first reference thickness and the second reference concentration, The thickness Tl of the first conductive type first GaN layer 115 may be set to be greater than the thickness Tl of the first conductive type GaN layer 115 in order to control the third droop characteristic D3 having a higher current density than the reference second droop characteristic D2. Type first GaN layer 115 is less than the first reference thickness of the first conductive type first GaN layer 115 and the concentration C1 of the first conductive type of the first conductive type dopant of the first conductive type first GaN layer 115 is greater than the concentration Layer can be controlled to be lower than the first reference concentration.

In addition, the thickness T2 of the second conductive type second GaN layer 118 can be controlled to be relatively large, and the concentration C2 of the second conductive type dopant can be controlled to be relatively high.

Specifically, when the thickness of the second conductivity type second GaN layer and the concentration of the second conductivity type dopant, which represent the second drop characteristics (D2) as the reference, are the second reference thickness and the second reference concentration, (T2) of the second conductivity type second GaN layer (118) to the second conductivity type (D3) so as to have a third droop characteristic (D3) of a higher current density than the second droop characteristic (D2) (C2) of the second conductivity type of the second conductivity type dopant of the second conductivity type second GaN layer (118) to a second reference conductivity of the second conductivity type second GaN layer Layer can be controlled to be higher than the second reference concentration.

In the embodiment, when a thick film is grown in a doping state that is too high, an abnormality may occur in the film quality. In this case, various film-restoring conditions such as n-type doping (such as Si-doping) employing a doping method of a very low concentration of Al or a method of using a doping method of delta- Can be maintained.

In addition, in the case of p-type doping (such as Mg doping), the quality of the film quality can be maintained by using an In treatment, but the present invention is not limited thereto.

The second conductive type second AlInGaN-based semiconductor layer 119 may be formed on the second conductive type second GaN layer 118. The bandgap energy level of the second conductive type second AlInGaN-based semiconductor layer 119 may be greater than the bandgap energy level of the second conductive type second GaN layer 118.

The second conductive type second semiconductor layer 116 may be formed on the second conductive type second AlInGaN-based semiconductor layer 119.

The second conductive type second semiconductor layer 116 may be formed of a compound semiconductor of a group III-V element doped with a second conductive dopant such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. The second conductive type second semiconductor layer 116 is _{In x Al y Ga 1 -x- y} N (0≤≤x≤≤1, 0≤≤y≤≤1, 0≤≤x + y≤≤1 ). ≪ / RTI >

The second conductive type second semiconductor layer 116 may be a p-type semiconductor layer, and the second conductive type dopant may include a p-type dopant such as Mg, Zn, and the like. The second conductive type second semiconductor layer 116 may be formed as a single layer or multiple layers, but is not limited thereto.

The second conductive type second semiconductor layer 116 may have a superlattice structure in which two different layers of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, .

In an exemplary embodiment, a third conductive type semiconductor layer (not shown), for example, a semiconductor layer having a polarity opposite to that of the second conductive type may be formed on the second conductive type second semiconductor layer 116, but the present invention is not limited thereto .

Accordingly, the light emitting structure layer 110 may include at least one of an n-p junction, a p-n junction, an n-p-n junction, and a p-n-p junction structure.

Next, as shown in FIG. 8, a mesa etching process for removing a part of the light emitting structure layer 110 may be performed. For example, a plurality of holes (H) exposing a part of the first conductive type first semiconductor layer (112) through the second conductive type second semiconductor layer (116) and the active layer (114) are formed .

The plurality of holes H may be formed at a predetermined angle from the first conductive type first semiconductor layer 112 to the upper surface of the second conductive type second semiconductor layer 116, But the present invention is not limited thereto.

In the embodiment, the horizontal width of the plurality of holes H may be reduced toward the lower side. On the other hand, with reference to FIG. 2, the horizontal width of the plurality of holes H can be reduced toward the upper side.

Referring to FIG. 8 again, according to the embodiment, the area of the active layer 114 and the first conductive type first semiconductor layer 112, which are removed by decreasing the horizontal width of the plurality of holes H downward, Thereby contributing to the luminous efficiency.

Next, as shown in FIG. 9, the first channel layer 120 may be formed on a part of the plurality of holes H and the second conductive type second semiconductor layer 116. At this time, the first channel layer 120 may not be formed in a region where the contact layer 160 to be formed later is formed. Accordingly, a part of the first conductive type semiconductor layer 112 exposed by the plurality of holes H can be exposed.

The first channel layer 120 electrically insulates the contact layer 160, the active layer 114, and the second conductive type second semiconductor layer 116, which will be formed later.

In an embodiment, the reflectivity of the first channel layer 120 may be greater than 50%. For example, the first channel layer 120 may be formed of an insulating material selected from SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ , Reflective material may be formed in a mixed form.

For example, the first channel layer 120 may be formed by mixing at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, .

According to the embodiment, the first channel layer 120 including the reflective material is disposed on the side of the contact layer 160 to be formed later, thereby preventing light absorption by the contact layer 160, thereby improving light extraction efficiency The luminous flux can be improved.

Next, as shown in FIG. 10, a second contact electrode 132 may be formed on the second conductive type second semiconductor layer 116. The second contact electrode 132 may be in ohmic contact with the second conductive type second semiconductor layer 116, may include at least one conductive material, and may be a single layer or a multi-layer structure.

For example, the second contact electrode 132 may include at least one of a metal, a metal oxide, and a metal nitride material. The second contact electrode 132 may include a light-transmitting material. For example, the second contact electrode 132 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZON), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO) gallium zinc oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni / IrOx / IrOx / Au / ITO, Pt, Ni, Au, Rh, or Pd.

Next, as shown in FIG. 11, a first reflective layer 134 may be formed on the second contact electrode 132. The first reflective layer 134 is disposed on the second contact electrode 132 and may reflect light incident through the second contact electrode 132.

The first reflective layer 134 may include one or more layers selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, And may be formed of a plurality of layers.

Next, a capping layer 136 may be formed on the first reflective layer 134.

The second electrode layer 130 may be referred to as a second electrode layer 130 including the second contact electrode 132, the first reflective layer 134, and the capping layer 136. The second electrode layer 130 may be referred to as a pad electrode 180 Can be supplied to the second semiconductor layer 116 of the second conductivity type.

The capping layer 136 may be disposed on the first reflective layer 134 and may supply power to the first reflective layer 134 from the pad electrode 180 formed thereafter. The capping layer 136 may function as a current diffusion layer.

The capping layer 136 may be made of a material having high electrical conductivity such as Sn, Ga, In, Bi, Cu, Ni, Ag, Mo, Al, Au, Nb, W, Ti, Al, Pd, Pt, Si and an optional alloy thereof.

Next, as shown in FIG. 12, a contact layer 160 may be formed on the exposed first conductive semiconductor layer 112. For example, the contact layer 160 may be formed by performing a re-growth process on the exposed first conductive semiconductor layer 112 by MOCVD.

The contact layer 160 may be formed of a metal layer or a semiconductor layer.

For example, the contact layer 160 may be formed of the same material as the first conductive type first semiconductor layer 112. For example, the contact layer 160 is _{In x Al y Ga 1 -x- y} N (0≤≤x≤≤1, 0≤≤y≤≤1, 0≤≤x + y≤≤1) of May be formed of a semiconductor layer having a composition formula.

In addition, the contact layer 160 may be formed of a compound semiconductor of group III-V elements such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP.

In an embodiment, the contact layer 160 may be doped with a first conductive type element, for example, an n-type doped element, and the doping concentration of the first conductive type element doped in the contact layer 160 may be less than the doping concentration of the first May be higher than the doping concentration of the first conductive type doping element doped in the conductive type first semiconductor layer 112. [

For example, the contact layer 160 may be an n-type semiconductor layer, and the first conductive dopant may include n-type dopants such as Si, Ge, Sn, Se, and Te.

Accordingly, according to the embodiment, the doping concentration of the first conductive type element doped in the contact layer 160 is higher than the doping concentration of the first conductive type first semiconductor layer 112, thereby improving the current injection efficiency .

The contact layer 160 may extend upward from the plurality of holes H that expose a part of the first conductive type first semiconductor layer 112 through the active layer 114 have.

The upper portion of the contact layer 160 may have a trapezoidal shape to increase the contact area with the first electrode layer 150 formed later, but the present invention is not limited thereto.

이하로 형성될 수 있다. 상기 컨택층(160)의 수평 폭이 약 100

이후 형성되는 제2 전극층(130)과 접촉하여 통전될 수 있기 때문에 제2 전극층(130)과 통전되지 않는 범위에서 수평 폭을 구비할 수 있다. 또한, 상기 컨택층(160)의 수평폭은 상기 비아홀(H)의 폭보다 크게 형성될 수 있으며, 예를 들어 상기 비아홀(H)의 수평폭이 약 24

상기 컨택층(160)은 약 24

초과의 수평 폭으로 형성될 수 있으나 이에 한정되는 것은 아니다.In the embodiment, the horizontal width of the contact layer 160 is larger than the horizontal width of the holes H (based on the bottom horizontal width)

Or less. When the horizontal width of the contact layer 160 is about 100

The second electrode layer 130 may be electrically connected to the second electrode layer 130 formed thereafter, so that the second electrode layer 130 may have a horizontal width in a range not to be energized. The horizontal width of the contact layer 160 may be greater than the width of the via hole H. For example, when the horizontal width of the via hole H is about 24

The contact layer 160 has a thickness of about 24

But the present invention is not limited thereto.

Next, an insulating layer 140 may be formed on the capping layer 136 and the first channel layer 120. The insulating layer 140 may be formed to expose the semiconductor contact layer 160. Accordingly, the diffusion preventing layer 154, which will be formed later, is in contact with the side surface of the contact layer 160 to enlarge the mutual contact area, thereby reducing the electrical resistance and improving the current injection efficiency.

The insulating layer 140 may electrically isolate the contact layer 160 from the second conductive type second semiconductor layer 116. The insulating layer 140 may be formed of a material selected from SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , and TiO ₂ .

Next, a diffusion preventing layer 154 may be formed on the insulating layer 140 and the side surfaces of the contact layer 160, and a bonding layer 156 may be formed on the diffusion preventing layer 154.

The diffusion preventing layer 154 and / or the bonding layer 156 may be a single layer or a plurality of layers including at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, have.

The diffusion preventing layer 154 and / or the bonding layer 156 may be formed of at least one of a deposition method, a sputtering method, and a plating method, or may be attached with a conductive sheet.

The bonding layer 156 may not be formed, but the bonding layer 156 is not limited thereto.

The diffusion preventing layer 154 may be in contact with the side surface of the contact layer 160 and the bonding layer 156 may be in contact with the contact layer 160 to form the first electrode layer 150 and the contact layer 160. [ It is possible to expand the contact area between the first electrode 160 and the second electrode 160.

Accordingly, according to the embodiment, the contact resistance between the contact layer 160 and the first electrode layer 150 is reduced, thereby preventing an increase in the operating voltage, thereby improving light output and improving electrical reliability.

According to the embodiment, the luminous flux can be improved by improving the current injection efficiency according to the increase of the contact area between the contact layer 160 and the first electrode layer 150.

The upper surface of the contact layer 160 may have a tapered side surface to widen the surface area of the contact layer 160 and the diffusion prevention layer 154 may be formed on the upper surface of the contact layer 160 It is possible to prevent the rise of the operating voltage due to the reduction of the contact resistance.

According to an embodiment of the present invention, the current injection efficiency between the first electrode layer 150 and the contact layer 160 is improved by widening the contact area between the inclined side surface of the contact layer 160 and the diffusion prevention layer 154, Can be improved.

Next, a support member 158 may be formed on the bonding layer 156. The first electrode layer 150 may be referred to as a first electrode layer 150 including the diffusion prevention layer 154, the bonding layer 156 and the support member 158. The first electrode layer 150 may be referred to as a lower electrode 159 (See FIG. 1) can be supplied to the first semiconductor layer 112 of the first conductivity type.

The support member 158 may be bonded to the bonding layer 156, but is not limited thereto. The support member 158 may be a conductive support member and may be formed of at least one of copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), copper-tungsten It can be one.

The support member 158 may be implemented as a carrier wafer, for example, Si, Ge, GaAs, ZnO, SiC, SiGe, Ga ₂ O ₃ , GaN, It can be bonded with solder.

Next, as shown in Fig. 13, the growth substrate 105 can be removed. At this time, the surface of the first conductive type first semiconductor layer 112 may be exposed by removing the remaining un-formed semiconductor layer (not shown) after removing the growth substrate 105.

The growth substrate 105 may be removed by physical and / or chemical methods. For example, the method of removing the growth substrate 105 may be removed by a laser lift off (LLO) process. For example, the growth substrate 105 is lifted off by irradiating the growth substrate 105 with a laser having a wavelength in a predetermined region.

Alternatively, a buffer layer (not shown) disposed between the growth substrate 105 and the first conductive type first semiconductor layer 112 may be removed using a wet etching solution to separate the growth substrate 105 .

The upper surface of the first conductive type first semiconductor layer 112 may be exposed by removing the growth substrate 105 and etching or polishing and removing the buffer layer.

The upper surface of the first conductive type first semiconductor layer 112 may be an N-face, which is closer to the growth substrate. The upper surface of the first conductive type first semiconductor layer 112 may be etched by an ICP / RIE (Inductively Coupled Plasma / Reactive Ion Etching) method or may be polished by a polishing apparatus.

Next, as shown in FIG. 14, a portion of the first channel layer 120 may be exposed by removing a portion of the light emitting structure layer 110. For example, portions of the first conductive type first semiconductor layer 112, the active layer 114, and the second conductive type second semiconductor layer 116 in the region where the pad electrode 180 is to be formed may be removed.

For example, wet etching or dry etching may be performed to remove the periphery of the light emitting structure layer 110, that is, the channel region or the isolation region, which is a boundary region between the chip and the chip, Lt; / RTI >

The upper surface of the first conductive type first semiconductor layer 112 may be formed with a light extracting structure P and the light extracting structure may be formed with a roughness or a pattern. The light extracting structure may be formed by a wet or dry etching method.

Next, as shown in FIG. 15, a passivation layer 170 may be formed on the exposed first channel layer 120 and the light emitting structure layer 110. The passivation layer 170 may have a pattern corresponding to the pattern of the light extracting structure P. The passivation layer 170 may be formed of a material selected from SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , and TiO ₂ .

A portion of the capping layer 136 may be exposed by forming a passivation layer 170 in a region where the pad electrode 180 is to be formed and a second hole H2 in which a portion of the first channel layer 120 is removed, have.

16, a pad electrode 180 may be formed on the exposed capping layer 136, and a lower electrode 159 may be formed under the first electrode layer 150, The device 100 can be manufactured.

The pad electrode 180 or the lower electrode 159 may be formed of a material such as Ti / Au, but is not limited thereto. The pad electrode 180 is a portion to be bonded with a wire and may be disposed on a predetermined portion of the light emitting structure layer 110 and may be formed of one or more.

According to the embodiments, it is possible to provide a light emitting device and a method of manufacturing the light emitting device, which can improve the light output and the electrical reliability by preventing the operation voltage from rising by reducing the contact resistance between the semiconductor contact layer and the electrode layer.

According to the embodiment, the luminous flux can be improved by improving the current injection efficiency between the semiconductor contact layer and the electrode layer.

In addition, according to the embodiment, the absorption of light by the semiconductor contact layer is prevented, so that the light extraction efficiency can be improved and the light flux can be improved.

17 is a view illustrating a light emitting device package 200 to which the light emitting device according to the embodiment is applied.

The light emitting device package 200 according to the embodiment includes a body 205, a first lead electrode 213 and a second lead electrode 214 disposed on the body 205, and a second lead electrode 214 provided on the body 205 A light emitting device 100 electrically connected to the first lead electrode 213 and the second lead electrode 214 and a molding member 240 surrounding the light emitting device 100.

The body 205 may be formed of a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100.

The first lead electrode 213 and the second lead electrode 214 are electrically isolated from each other and provide power to the light emitting device 100. [ The first lead electrode 213 and the second lead electrode 214 may increase the light efficiency by reflecting the light generated from the light emitting device 100. The heat generated from the light emitting device 100 To the outside.

The light emitting device 100 may be disposed on the body 205 or may be disposed on the first lead electrode 213 or the second lead electrode 214.

The light emitting device 100 may be electrically connected to the first lead electrode 213 and the second lead electrode 214 by a wire, flip chip, or die bonding method.

The light emitting device 100 may be mounted on the second lead electrode 214 and connected to the first lead electrode 213 by the wire 250. However, the embodiment is not limited thereto.

The molding member 240 surrounds the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 240 may include a phosphor 232 to change the wavelength of light emitted from the light emitting device 100. The upper surface of the molding member 240 may have a flat or convex or concave shape in cross section, but is not limited thereto.

A plurality of light emitting devices or light emitting device packages according to the embodiments may be arrayed on a substrate, and a lens, a light guide plate, a prism sheet, a diffusion sheet, etc., which are optical members, may be disposed on the light path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member can function as a light unit. The light unit may be implemented as a top view or a side view type and may be provided in a display device such as a portable terminal and a notebook computer, or may be variously applied to a lighting device and a pointing device. Still another embodiment may be embodied as a lighting device including the light emitting device or the light emitting device package described in the above embodiments. For example, the lighting device may include a lamp, a streetlight, an electric signboard, and a headlight.

18 is an exploded perspective view of a lighting apparatus according to an embodiment.

The lighting apparatus according to the embodiment may include a cover 2100, a light source module 2200, a heat discharger 2400, a power supply unit 2600, an inner case 2700, and a socket 2800. Further, the illumination device according to the embodiment may further include at least one of the member 2300 and the holder 2500. The light source module 2200 may include a light emitting device package according to an embodiment.

For example, the cover 2100 may have a shape of a bulb or a hemisphere, and may be provided in a shape in which the hollow is hollow and a part is opened. The cover 2100 may be optically coupled to the light source module 2200. For example, the cover 2100 may diffuse, scatter, or excite light provided from the light source module 2200. The cover 2100 may be a kind of optical member. The cover 2100 may be coupled to the heat discharging body 2400. The cover 2100 may have an engaging portion that engages with the heat discharging body 2400.

The inner surface of the cover 2100 may be coated with a milky white paint. Milky white paints may contain a diffusing agent to diffuse light. The surface roughness of the inner surface of the cover 2100 may be larger than the surface roughness of the outer surface of the cover 2100. This is for sufficiently diffusing and diffusing the light from the light source module 2200 and emitting it to the outside.

The cover 2100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 2100 may be transparent so that the light source module 2200 is visible from the outside, and may be opaque. The cover 2100 may be formed by blow molding.

The light source module 2200 may be disposed on one side of the heat discharging body 2400. Accordingly, heat from the light source module 2200 is conducted to the heat discharger 2400. The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250.

The member 2300 is disposed on the upper surface of the heat discharging body 2400 and has guide grooves 2310 through which the plurality of light source portions 2210 and the connector 2250 are inserted. The guide groove 2310 corresponds to the substrate of the light source unit 2210 and the connector 2250.

The surface of the member 2300 may be coated or coated with a light reflecting material. For example, the surface of the member 2300 may be coated or coated with a white paint. The member 2300 reflects the light reflected by the inner surface of the cover 2100 toward the cover 2100 in the direction toward the light source module 2200. Therefore, the light efficiency of the illumination device according to the embodiment can be improved.

The member 2300 may be made of an insulating material, for example. The connection plate 2230 of the light source module 2200 may include an electrically conductive material. Therefore, electrical contact can be made between the heat discharging body 2400 and the connecting plate 2230. The member 2300 may be formed of an insulating material to prevent an electrical short circuit between the connection plate 2230 and the heat discharging body 2400. The heat discharger 2400 receives heat from the light source module 2200 and heat from the power supply unit 2600 to dissipate heat.

The holder 2500 blocks the receiving groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 housed in the insulating portion 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510. The guide protrusion 2510 has a hole through which the protrusion 2610 of the power supply unit 2600 passes.

The power supply unit 2600 processes or converts an electrical signal provided from the outside and provides the electrical signal to the light source module 2200. The power supply unit 2600 is housed in the receiving groove 2719 of the inner case 2700 and is sealed inside the inner case 2700 by the holder 2500.

The power supply unit 2600 may include a protrusion 2610, a guide 2630, a base 2650, and an extension 2670.

The guide portion 2630 has a shape protruding outward from one side of the base 2650. The guide portion 2630 may be inserted into the holder 2500. A plurality of components may be disposed on one side of the base 2650. The plurality of components include, for example, a DC converter for converting AC power supplied from an external power source into DC power, a driving chip for controlling driving of the light source module 2200, an ESD (ElectroStatic discharge) protection device, and the like, but the present invention is not limited thereto.

The extension portion 2670 has a shape protruding outward from the other side of the base 2650. The extension portion 2670 is inserted into the connection portion 2750 of the inner case 2700 and receives an external electrical signal. For example, the extension portion 2670 may be provided to be equal to or smaller than the width of the connection portion 2750 of the inner case 2700. One end of each of the positive wire and the negative wire is electrically connected to the extension portion 2670 and the other end of the positive wire and the negative wire are electrically connected to the socket 2800 .

The inner case 2700 may include a molding part together with the power supply part 2600. The molding part is a hardened portion of the molding liquid so that the power supply unit 2600 can be fixed inside the inner case 2700.

The features, structures, effects, and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

The light emitting structure layer 110, the first conductive type first semiconductor layer 112,
The first conductive type first GaN layer 115, the second conductive type second GaN layer 118,
The second conductive type second semiconductor layer 116, the active layer 114,
The first electrode layer 150, the second electrode layer 130,
The contact layer 160, the insulating layer 140,
The passivation layer 170, the pad electrode 180,

Claims (11)

A first conductive type first semiconductor layer;
A first conductive type first GaN layer of a first thickness on the first conductive type first semiconductor layer;
An active layer on the first conductive type first GaN layer;
A second conductive type second GaN layer having a second thickness on the active layer;
A second conductive type second AlInGaN-based semiconductor layer on the second conductive type second GaN layer; And
And a second conductive type second semiconductor layer on the second conductive type second AlInGaN-based semiconductor layer.
The method according to claim 1,
The first thickness of the first conductive type first GaN layer is,
And the second conductive type second GaN layer is thicker than the second thickness.
The method according to claim 1,
And a first conductive AlInGaN-based semiconductor layer between the first conductive type first semiconductor layer and the first conductive type first GaN layer.
The method according to claim 1,
And an AlInGaN-based superlattice layer between the first conductive type first GaN layer and the active layer.
Forming a first conductive type first GaN layer of a first thickness on the first conductive type first semiconductor layer;
Forming an active layer on the first conductive type first GaN layer;
Forming a second conductive type second GaN layer of a second thickness on the active layer;
Forming a second conductive type second AlInGaN-based semiconductor layer on the second conductive type second GaN layer; And
And a second conductive type second semiconductor layer on the second conductive type second AlInGaN-based semiconductor layer.
6. The method of claim 5,
Wherein the first thickness of the first conductive type first GaN layer is greater than the second thickness of the second conductive type second GaN layer.
6. The method of claim 5,
When the thickness of the first conductivity type first GaN layer and the concentration of the first conductivity type dopant which represent the reference droop characteristics are the first reference thickness and the second reference concentration,
In order to control the droop characteristic to be lower than the reference droop characteristic,
Wherein the thickness of the first conductive type first GaN layer is larger than the first reference thickness of the first conductive type first GaN layer and the thickness of the first conductive type first GaN layer of the first conductive type first GaN layer And the concentration (C1) is controlled to be higher than the first reference concentration of the first conductivity type first GaN layer.
8. The method of claim 7,
When the thickness of the second conductive type second GaN layer and the concentration of the second conductive type dopant exhibiting the reference droop characteristics are the second reference thickness and the second reference concentration,
In order to control the droop characteristic to be lower than the reference droop characteristic,
The thickness of the second conductive type second GaN layer is made thinner than the second reference thickness of the second conductive type second GaN layer and the thickness of the second conductive type second GaN layer of the second conductive type second GaN layer And the concentration C2 is controlled to be lower than the second reference concentration of the second conductive type second GaN layer.
6. The method of claim 5,
When the thickness of the first conductivity type first GaN layer and the concentration of the first conductivity type dopant which represent the reference droop characteristics are the first reference thickness and the second reference concentration,
In order to control the droop characteristic to have a higher current density than the reference droop characteristic,
Wherein the thickness of the first conductive type first GaN layer is smaller than the first reference thickness of the first conductive type first GaN layer and the thickness of the first conductive type first conductive type dopant of the first conductive type first GaN layer And the concentration (C1) is controlled to be lower than the first reference concentration of the first conductive type first GaN layer.
10. The method of claim 9,
When the thickness of the second conductive type second GaN layer and the concentration of the second conductive type dopant exhibiting the reference droop characteristics are the second reference thickness and the second reference concentration,
In order to control the droop characteristic to have a higher current density than the reference droop characteristic,
The second conductive type second GaN layer has a thickness greater than the second reference thickness of the second conductive type second GaN layer and the second conductive type second GaN layer has a second conductive type And the concentration C2 is controlled to be higher than the second reference concentration of the second conductive type second GaN layer.
An illumination system comprising a light-emitting unit comprising the light-emitting element according to any one of claims 1 to 4.

Images