KR20150010147A - Light emitting device, and lighting system - Google Patents

Abstract

The present invention relates to a light emitting device, a manufacturing method thereof, a light emitting device package, and a lighting system. According to an embodiment, the light emitting device includes: a first conductive semiconductor layer (112); an active layer on the first conductive semiconductor layer (112); a second conductive semiconductor layer (116) on the active layer (114); a transparent electrode (130) on the second conductive semiconductor layer (116); and a nitride wave conversion layer (140) including a pattern on the transparent electrode (130). The present invention increases color rendering index while maintaining the reliability of the light emitting device.

Description

[0001] LIGHT EMITTING DEVICE, AND LIGHTING SYSTEM [0002]

Embodiments relate to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system.

Light Emitting Device is a pn junction diode whose electrical energy is converted into light energy. It can be produced from compound semiconductor such as group III and group V on the periodic table and by controlling the composition ratio of compound semiconductor, It is possible.

When a forward voltage is applied to the light emitting device, electrons in the n-layer and holes in the p-layer are coupled to emit energy corresponding to the band gap energy of the conduction band and the valance band. Is mainly emitted in the form of heat or light, and when emitted in the form of light, becomes a light emitting element.

For example, nitride semiconductors have received great interest in the development of optical devices and high power electronic devices due to their high thermal stability and wide bandgap energy. Particularly, blue light emitting devices, green light emitting devices, ultraviolet (UV) light emitting devices, and the like using nitride semiconductors have been commercialized and widely used.

There are various methods of making a white LED in the prior art, and a method widely used is a method of realizing a white color by combining a blue LED with a yellow phosphor.

On the other hand, when YAG is used as a yellow phosphor, there is a problem that the light flux is large, but the light intensity (Po) near the long wavelength, for example, about 480 nm is weak and the color rendering index (CRI) is lower than that of other fluorescent materials.

Meanwhile, according to the related art, if a wavelength of about 470 nm or more is formed, there is a technical contradiction that the reliability of the LED chip is lowered due to the deterioration of the crystallinity of the LED epithelium.

Accordingly, there is a need for a new technique that can increase the color rendering index while maintaining the reliability of the LED chip.

Embodiments provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system capable of increasing a color rendering index while maintaining reliability.

The light emitting device according to the embodiment includes a first conductive semiconductor layer 112; An active layer 114 on the first conductive semiconductor layer 112; A second conductive semiconductor layer 116 on the active layer 114; A light-transmitting electrode 130 on the second conductive type semiconductor layer 116; And a nitride wavelength conversion layer 140 including a pattern on the transparent electrode 130.

Further, the illumination system according to the embodiment may include a lighting unit including the light emitting element.

Embodiments can provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system that can increase the color rendering index while maintaining reliability.

1 is a sectional view of a light emitting device according to a first embodiment;
2 is a partially enlarged perspective view of the light emitting device according to the first embodiment;
3 is a graph of the luminous intensity of the light emitting device according to the embodiment and the related art.
4 is a sectional view of a light emitting device according to a second embodiment;
5A is a cross-sectional view of a light emitting device according to the third embodiment.
5B is a partial cross-sectional view of the light emitting device according to the third embodiment.
6 is a sectional view of a light emitting device according to a fourth embodiment.
7 is a sectional view of a light emitting device according to a fifth embodiment;
8 to 11 are cross-sectional views illustrating a method of manufacturing a light emitting device according to an embodiment.
12 is a sectional view of a light emitting device package according to an embodiment.
13 is an exploded perspective view of a lighting apparatus according to an embodiment.

In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under" the substrate, each layer Quot; on "and" under "are intended to include both" directly "or" indirectly " do. Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

(Example)

FIG. 1 is a cross-sectional view of a light emitting device 100 according to a first embodiment, and FIG. 2 is an enlarged perspective view of a portion A of the light emitting device according to the first embodiment.

The light emitting device 100 according to the embodiment includes a first conductive semiconductor layer 112, an active layer 114 on the first conductive semiconductor layer 112, And a nitride wavelength conversion layer 140 including a pattern on the transmissive electrode 130 and the transmissive electrode 130 on the second conductive type semiconductor layer 116. [

Embodiments provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system capable of increasing a color rendering index while maintaining reliability.

According to the prior art, when YAG is used as a phosphor, there is a problem that the lightness (Po) near 480 nm is weak and the CRI is low. On the other hand, when wavelengths of about 470 nm or more are formed, There is a problem of reliability reduction due to defects.

In this embodiment, the nitride wavelength conversion layer 140 may be used as the wavelength conversion layer, and the nitride wavelength conversion layer 140 may include In _x Ga _{1 -x} N (where 0 <x <1) have.

The nitride wavelength conversion layer 140 may be a photoluminescence layer.

Accordingly, in the embodiment, the active layer 114 emits light having a wavelength of about 350 nm to about 470 nm, and the nitride wavelength conversion layer 140 emits light emitted from the active layer 114 at a wavelength of about 480 nm to 500 nm It can be converted into light.

For example, when the nitride wavelength conversion layer 140 is formed of an In _x Ga _{1 - x} N material, energy band gap control can be performed according to the composition of indium (In). As the indium content increases, Can be reduced and emitted as long-wavelength light.

3 is a luminous intensity spectrum of the light emitting device according to the embodiment (E) and the related art (R).

The conventional technique R has a problem that the lightness Po near the wavelength of about 480 nm is weak and the color rendering index CRI is low. However, as in the embodiment, the light having a wavelength of about 480 nm to 500 nm through the nitride wavelength conversion layer 140 The color reproducibility can be improved by realizing high CRI without compromising the reliability of the device by compensating the spectrum.

The transparent electrode 130 in the embodiment is ZnO, ZnOAl, Ga ₂ O ₃ But it is not limited thereto.

For example, when the transparent electrode 130 is made of ZnO, ZnO serves as a transparent electrode to spread a carrier, for example, a hole of the second conductive type semiconductor layer 116 It is suitable for growth of the nitride wavelength conversion layer 140 because the GaN-based material which is an epi material and the lattice mismatch are few.

In the embodiment, a current may not flow through the nitride wavelength conversion layer 140, and thus it is possible to prevent the occurrence of defects due to crystallization deterioration that may occur when a current flows.

In the embodiment, the nitride wavelength conversion layer 140 may be formed in a nanorod form as shown in FIGS. 1 and 2, thereby increasing the surface area of the nitride wavelength conversion layer 140 to increase the wavelength conversion efficiency, The light extraction efficiency of the wavelength-converted light by the rod pattern can be increased.

4 is a sectional view of the light emitting device 102 according to the second embodiment.

The second embodiment can employ the technical features of the first embodiment.

The embodiment may further include a light-transmitting insulating layer 150 interposed between the nanorod nitride wavelength conversion layers 140. The light-transmitting insulating layer 150 may include an oxide, a nitride, and the like, and the nanorod nitride wavelength conversion layer 140 may be firmly held and the light extraction efficiency may be enhanced.

5A is a cross-sectional view of the light emitting device 103 according to the third embodiment, and FIG. 5B is a partial cross-sectional view taken along line I-I 'of the light emitting device according to the third embodiment.

The third embodiment can adopt the technical features of the first embodiment and the second embodiment.

In the third embodiment, the nanorod nitride wavelength conversion layer 143 includes a first semiconductor layer 143a on the central axis, a light-emitting layer 143b surrounding the first semiconductor layer 143a, and the light-emitting layer 143b And a second semiconductor layer 143c that surrounds the second semiconductor layer 143c.

The first semiconductor layer 143a and the second semiconductor layer 143c may be doped with a first conductive type or a second conductive type, but the present invention is not limited thereto.

In the third embodiment, the nanorod nitride wavelength conversion layer 143 may be a nitride semiconductor layer such as In _x Ga _{1 -x} N (where 0 <x <1), but is not limited thereto.

In addition, in the third embodiment, the nanorod nitride wavelength conversion layer 143 may be an InGaN / GaN superlattice structure, but is not limited thereto.

When the nano-rod nitride wavelength conversion layer 143 is formed as in the third embodiment, the light-emitting efficiency of the light-emitting layer 143b can be increased by increasing the surface area of the light-emitting layer 143b.

6 is a cross-sectional view of a light emitting device 104 according to the fourth embodiment.

The fourth embodiment can adopt the technical features of the first embodiment and the second embodiment.

In the fourth embodiment, the nanorod nitride wavelength conversion layer 144 includes a first semiconductor layer 144a on the transmissive electrode 130, a light emitting layer 144b on the first semiconductor layer 144a, And a second semiconductor layer 144c on the light emitting layer 144b.

In the fourth embodiment, the nanorod nitride waveguide conversion layer 144 includes a nitride semiconductor layer such as In _x Ga _{1 -x} N (where 0 <x <1) or an InGaN / GaN superlattice structure But is not limited thereto.

7 is a cross-sectional view of a light emitting device 105 according to the fifth embodiment.

The fifth embodiment can adopt the technical features of the first embodiment.

In the fifth embodiment, the upper surface of the transparent electrode 132 may include a concavo-convex pattern, and the nitride wavelength conversion layer 142 of the fifth exemplary embodiment includes a concavo-convex pattern corresponding to the concavo-convex pattern of the transparent electrode 132 The surface area of the nitride wavelength variable layer can be increased to increase the wavelength conversion ratio and further increase the light extraction efficiency.

Embodiments can provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system that can increase the color rendering index while maintaining reliability.

Hereinafter, a method of manufacturing a light emitting device according to an embodiment will be described with reference to FIGS.

First, a substrate 102 is prepared as shown in FIG. The substrate 102 may be formed of a material having excellent thermal conductivity, and may be a conductive substrate or an insulating substrate. For example, the substrate 102 is a sapphire (Al ₂ O _3), SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, and Ga ₂ 0 ₃ May be used. A concavo-convex structure may be formed on the substrate 102, but the present invention is not limited thereto.

The light emitting structure 110 including the first conductivity type semiconductor layer 112, the active layer 114, and the second conductivity type semiconductor layer 116 may be formed on the first substrate 102.

A buffer layer (not shown) may be formed on the substrate 102. The buffer layer may alleviate the lattice mismatch between the material of the light emitting structure 110 and the substrate 102. The material of the buffer layer may be a Group III-V compound semiconductor such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN , And AlInN.

The first conductive semiconductor layer 112 may be formed of a semiconductor compound. Group 3-Group 5, Group 2-Group 6, and the like, and the first conductive type dopant may be doped. When the first conductive semiconductor layer 112 is an N-type semiconductor layer, the first conductive dopant may include Si, Ge, Sn, Se, and Te as an N-type dopant.

The first conductive semiconductor layer 112 may include a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + .

The first conductive semiconductor layer 112 may be formed of one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP and InP.

The active layer 114 may be formed of at least one of a single quantum well structure, a multi quantum well (MQW) structure, a quantum-wire structure, or a quantum dot structure. For example, the active layer 114 may be formed with a multiple quantum well structure by injecting trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and trimethyl indium gas (TMIn) But is not limited thereto.

The well layer / barrier layer of the active layer 114 may be formed of any one or more pairs of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP But is not limited thereto. The well layer may be formed of a material having a band gap lower than the band gap of the barrier layer.

In the embodiment, the electron blocking layer 118 is formed on the active layer 114 to serve as electron blocking and cladding of the active layer, thereby improving the luminous efficiency. For example, the electron blocking layer 118 may be formed of a semiconductor of Al _x In _y Ga _(1-xy) N (0? _{X ? 1, 0? Y ? 1} ) And may have an energy band gap higher than the energy band gap, and may be formed to a thickness of about 100 A to about 600 A, but the present invention is not limited thereto.

The second conductive semiconductor layer 116 may be formed of a semiconductor compound. 3-group-5, group-2-group-6, and the like, and the second conductivity type dopant may be doped.

For example, the second conductive semiconductor layer 116 may have a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + And the like. When the second conductive semiconductor layer 116 is a P-type semiconductor layer, the second conductive dopant may include Mg, Zn, Ca, Sr, and Ba as a P-type dopant.

In an embodiment, the first conductive semiconductor layer 112 may be an n-type semiconductor layer, and the second conductive semiconductor layer 116 may be a p-type semiconductor layer. Also, on the second conductive semiconductor layer 116, a semiconductor (e.g., an n-type semiconductor) (not shown) having a polarity opposite to that of the second conductive type may be formed. Accordingly, the light emitting structure 110 may have any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.

Thereafter, a light-transmitting electrode 130 is formed on the second conductive type semiconductor layer 116.

For example, the light-transmitting electrode 130 may include an ohmic layer, and may be formed by laminating a single metal, a metal alloy, a metal oxide, or the like so as to efficiently inject holes.

For example, the transmissive electrode 130 may be formed of a material selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (ZnO), indium gallium tin oxide (AZO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZON nitride, AGZO Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Ni, IrOx / Au, and Ni / IrOx / , Au, and Hf, and is not limited to such a material.

9, the light-transmitting electrode 130, the second conductivity type semiconductor layer 116, the electron blocking layer 118, and a part of the active layer 114 are formed so that the first conductivity type semiconductor layer 112 is exposed. Can be removed.

Next, as shown in FIG. 10, a nitride wavelength conversion layer 140 including a pattern can be formed on the transparent electrode 130.

In an embodiment, the nitride wavelength conversion layer 140 may be used as the wavelength conversion layer, and the nitride wavelength conversion layer 140 may include In _x Ga _{1 -x} N (where 0 <x <1) . The nitride wavelength conversion layer 140 may be a photoluminescence layer.

Accordingly, in the embodiment, the active layer 114 emits light having a wavelength of about 350 nm to about 470 nm, and the nitride wavelength conversion layer 140 emits light emitted from the active layer 114 at a wavelength of about 480 nm to 500 nm It can be converted into light.

For example, when the nitride wavelength conversion layer 140 is formed of an In _x Ga _{1 - x} N material, energy band gap control can be performed according to the composition of indium (In). As the indium content increases, Can be reduced and emitted as long-wavelength light.

In the embodiment, the nitride wavelength conversion layer 140 may be formed in a nanorod form as shown in FIGS. 1 and 2, thereby increasing the surface area of the nitride wavelength conversion layer 140 to increase the wavelength conversion efficiency, The light extraction efficiency of the wavelength-converted light by the rod pattern can be increased.

As shown in FIG. 4, the light emitting device 102 according to the second embodiment may further include a light-transmitting insulating layer 150 interposed between the nanorod nitride waveguide conversion layers 140.

5A, in the light emitting device 103 according to the third embodiment, the nanorod nitride waveguide conversion layer 143 includes a first semiconductor layer 143a on the central axis and a first semiconductor layer 143b surrounding the first semiconductor layer 143a And a second semiconductor layer 143c surrounding the light emitting layer 143b and the light emitting layer 143b.

6, the nanorod nitride waveguide conversion layer 144 includes a first semiconductor layer 144a on the transmissive electrode 130 and a second semiconductor layer 144b on the first semiconductor layer 144a. A second semiconductor layer 144b on the light emitting layer 144b, and a second semiconductor layer 144c on the light emitting layer 144b.

7, the upper surface of the translucent electrode 132 may include a concavo-convex pattern, and the nitride wavelength conversion layer 142 of the fifth embodiment may include a concavo- The surface area of the nitride wavelength-varying layer including the corresponding concave-convex pattern can be increased to increase the wavelength conversion ratio and further increase the light extraction efficiency.

Next, as shown in FIG. 11, a second electrode 152 is formed on the transparent electrode 130, and a first electrode 151 is formed on the exposed first conductive semiconductor layer 112, Device can be formed.

According to the embodiments, it is possible to provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system capable of increasing the color rendering index while maintaining reliability.

12 is a view illustrating a light emitting device package 200 provided with a light emitting device according to embodiments.

The light emitting device package according to the embodiment includes a package body 205, a third electrode layer 213 and a fourth electrode layer 214 provided on the package body 205, A light emitting device 100 electrically connected to the third electrode layer 213 and the fourth electrode layer 214 and a molding member 230 surrounding the light emitting device 100 are included.

The package body 205 may be formed of a silicon material, a synthetic resin material, or a metal material, and the inclined surface may be formed around the light emitting device 100.

The third electrode layer 213 and the fourth electrode layer 214 are electrically isolated from each other and provide power to the light emitting device 100. The third electrode layer 213 and the fourth electrode layer 214 may function to increase light efficiency by reflecting the light generated from the light emitting device 100, And may serve to discharge heat to the outside.

The light emitting device 100 may be a horizontal type light emitting device as illustrated in FIG. 1, but is not limited thereto, and a vertical type light emitting device may also be used.

The light emitting device 100 may be mounted on the package body 205 or on the third electrode layer 213 or the fourth electrode layer 214.

The light emitting device 100 may be electrically connected to the third electrode layer 213 and / or the fourth electrode layer 214 by a wire, flip chip, or die bonding method. The third electrode layer 213 and the fourth electrode layer 214 are electrically connected to each other through wires. However, the present invention is not limited thereto.

The molding member 230 surrounds the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 230 may include a phosphor 232 to change the wavelength of light emitted from the light emitting device 100.

A plurality of light emitting devices or light emitting device packages according to the embodiments may be arrayed on a substrate, and a lens, a light guide plate, a prism sheet, a diffusion sheet, etc., which are optical members, may be disposed on the light path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member can function as a light unit. The light unit may be implemented as a top view or a side view type and may be provided in a display device such as a portable terminal and a notebook computer, or may be variously applied to a lighting device and a pointing device. Still another embodiment may be embodied as a lighting device including the light emitting device or the light emitting device package described in the above embodiments. For example, the lighting device may include a lamp, a streetlight, an electric signboard, and a headlight.

13 is an exploded perspective view of a lighting apparatus according to an embodiment.

13, the lighting apparatus according to the embodiment includes a cover 2100, a light source module 2200, a heat discharger 2400, a power supply unit 2600, an inner case 2700, and a socket 2800 . Further, the illumination device according to the embodiment may further include at least one of the member 2300 and the holder 2500. The light source module 2200 may include a light emitting device package according to an embodiment.

For example, the cover 2100 may have a shape of a bulb or a hemisphere, and may be provided in a shape in which the hollow is hollow and a part is opened. The cover 2100 may be optically coupled to the light source module 2200. For example, the cover 2100 may diffuse, scatter, or excite light provided from the light source module 2200. The cover 2100 may be a kind of optical member. The cover 2100 may be coupled to the heat discharging body 2400. The cover 2100 may have an engaging portion that engages with the heat discharging body 2400.

The inner surface of the cover 2100 may be coated with a milky white paint. Milky white paints may contain a diffusing agent to diffuse light. The surface roughness of the inner surface of the cover 2100 may be larger than the surface roughness of the outer surface of the cover 2100. This is for sufficiently diffusing and diffusing the light from the light source module 2200 and emitting it to the outside.

The cover 2100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 2100 may be transparent so that the light source module 2200 is visible from the outside, and may be opaque. The cover 2100 may be formed by blow molding.

The light source module 2200 may be disposed on one side of the heat discharging body 2400. Accordingly, heat from the light source module 2200 is conducted to the heat discharger 2400. The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250.

The member 2300 is disposed on the upper surface of the heat discharging body 2400 and has guide grooves 2310 through which the plurality of light source portions 2210 and the connector 2250 are inserted. The guide groove 2310 corresponds to the substrate of the light source unit 2210 and the connector 2250.

The surface of the member 2300 may be coated or coated with a light reflecting material. For example, the surface of the member 2300 may be coated or coated with a white paint. The member 2300 reflects the light reflected by the inner surface of the cover 2100 toward the cover 2100 in the direction toward the light source module 2200. Therefore, the light efficiency of the illumination device according to the embodiment can be improved.

The member 2300 may be made of an insulating material, for example. The connection plate 2230 of the light source module 2200 may include an electrically conductive material. Therefore, electrical contact can be made between the heat discharging body 2400 and the connecting plate 2230. The member 2300 may be formed of an insulating material to prevent an electrical short circuit between the connection plate 2230 and the heat discharging body 2400. The heat discharger 2400 receives heat from the light source module 2200 and heat from the power supply unit 2600 to dissipate heat.

The holder 2500 blocks the receiving groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 housed in the insulating portion 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510. The guide protrusion 2510 has a hole through which the protrusion 2610 of the power supply unit 2600 passes.

The power supply unit 2600 processes or converts an electrical signal provided from the outside and provides the electrical signal to the light source module 2200. The power supply unit 2600 is housed in the receiving groove 2719 of the inner case 2700 and is sealed inside the inner case 2700 by the holder 2500.

The power supply unit 2600 may include a protrusion 2610, a guide 2630, a base 2650, and an extension 2670.

The guide portion 2630 has a shape protruding outward from one side of the base 2650. The guide portion 2630 may be inserted into the holder 2500. A plurality of components may be disposed on one side of the base 2650. The plurality of components include, for example, a DC converter for converting AC power supplied from an external power source into DC power, a driving chip for controlling driving of the light source module 2200, an ESD (ElectroStatic discharge) protective device, and the like, but the present invention is not limited thereto.

The extension portion 2670 has a shape protruding outward from the other side of the base 2650. The extension portion 2670 is inserted into the connection portion 2750 of the inner case 2700 and receives an external electrical signal. For example, the extension portion 2670 may be provided to be equal to or smaller than the width of the connection portion 2750 of the inner case 2700. One end of each of the positive wire and the negative wire is electrically connected to the extension portion 2670 and the other end of the positive wire and the negative wire are electrically connected to the socket 2800 .

The inner case 2700 may include a molding part together with the power supply part 2600. The molding part is a hardened portion of the molding liquid so that the power supply unit 2600 can be fixed inside the inner case 2700.

Embodiments can provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system that can increase the color rendering index while maintaining reliability.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

The first conductive semiconductor layer 112, the active layer 114,
The second conductivity type semiconductor layer 116, the light-transmitting electrode 130,
The nitride wavelength conversion layer 140

Claims (9)

A first conductive semiconductor layer;
An active layer on the first conductive semiconductor layer;
A second conductive semiconductor layer on the active layer;
A light-transmitting electrode on the second conductive type semiconductor layer; And
And a nitride wavelength conversion layer including a pattern on the light-transmitting electrode. The method according to claim 1,
The nitride wavelength conversion layer
And In _x Ga _{1 -x} N (where 0 &lt; x &lt; 1). The method according to claim 1,
Wherein the nitride wavelength conversion layer converts light emitted from the active layer into light having a wavelength of 480 nm to 500 nm. The method according to claim 1,
In the nitride wavelength conversion layer,
A light emitting device comprising a nanorod form. 5. The method of claim 4,
And a translucent insulating layer interposed between the nanorod nitride wavelength conversion layers. 5. The method of claim 4,
The nanorod nitride wavelength conversion layer
A first semiconductor layer on a central axis;
A light emitting layer surrounding the first semiconductor layer; And
And a second semiconductor layer surrounding the light-emitting layer. The method according to claim 1,
The nanorod nitride wavelength conversion layer
A first semiconductor layer on the light-transmitting electrode;
A light emitting layer on the first semiconductor layer; And
And a second semiconductor layer on the light-emitting layer. The method according to claim 1,
The upper surface of the translucent electrode
A light emitting device comprising a concavo-convex pattern. An illumination system comprising a light-emitting unit comprising the light-emitting element according to any one of claims 1 to 8.

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