KR20180061978A - Light emitting device, light emitting device package and lighting apparatus - Google Patents

Abstract

The present invention relates to a light emitting device, a light emitting device package, and a lighting apparatus comprising the same. According to an embodiment of the present invention, the light emitting device comprises: a first light emitting structure (110) comprising a first conductive type of a first semiconductor layer (112), a first active layer (114), and a second conductive type of a second semiconductor layer (116); a second light emitting structure (120) which is arranged to be separated from one side of the first light emitting structure (110) and comprises a first conductive type of a third semiconductor layer (122), a second active layer (124), and a second conductive-type of a fourth semiconductor layer (126); a first electrode unit (160) which is electrically connected to the first conductive type of the first semiconductor layer (112) of the first light emitting structure (110) and the first conductive type of the second light emitting structure (120) in common; and a second electrode unit (150) which is electrically connected to the second conductive type of the second semiconductor layer (116) of the first light emitting structure (110) and the second conductive type of the fourth semiconductor layer (126) of the second light emitting structure (120) in common.

Description

 BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device, a light emitting device package,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a light emitting device, a light emitting device package and a lighting device including the same.

Semiconductor devices including compounds such as GaN and AlGaN have many merits such as wide and easy bandgap energy, and can be used variously as light emitting devices, light receiving devices, and various diodes.

Particularly, a light emitting device such as a light emitting diode or a laser diode using a semiconductor material of Group 3-5 or 2-6 group semiconductors can be applied to various devices such as a red, Blue, and ultraviolet rays. By using fluorescent materials or combining colors, it is possible to realize a white light beam with high efficiency. Also, compared to conventional light sources such as fluorescent lamps and incandescent lamps, low power consumption, Speed, safety, and environmental friendliness. In addition, when a light-receiving element such as a photodetector or a solar cell is manufactured using a semiconductor material of Group 3-5 or Group 2-6 compound semiconductor, development of a device material absorbs light of various wavelength regions to generate a photocurrent , It is possible to use light in various wavelength ranges from the gamma ray to the radio wave region. It also has advantages of fast response speed, safety, environmental friendliness and easy control of device materials, so it can be easily used for power control or microwave circuit or communication module.

Therefore, a transmission module of the optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, a white light emitting element capable of replacing a fluorescent lamp or an incandescent lamp Diode lighting devices, automotive headlights, traffic lights, and gas and fire sensors. Further, applications can be extended to high frequency application circuits, other power control devices, and communication modules.

The light emitting device may be formed by combining a group III-V element or a group II-VI element in the periodic table with a pn junction diode in which electric energy is converted into light energy, So that various colors can be realized.

For example, nitride semiconductors have received great interest in the development of optical devices and high power electronic devices due to their high thermal stability and wide bandgap energy. Particularly, a blue light emitting element, a green light emitting element, an ultraviolet (UV) light emitting element, and a red (RED) light emitting element using a nitride semiconductor are commercially available and widely used.

For example, in the case of an ultraviolet light emitting diode (UV LED), a light emitting diode that emits light distributed in a wavelength range of 200 nm to 400 nm is used for sterilization and purification in the above wavelength range and short wavelength, Or a hardener.

1 is a cross-sectional view of a conventional light emitting device package.

In order to realize high color reproduction in such a conventional technique, there is a technique using a plurality of light emitting chips and phosphors emitting different light emission wavelengths. For example, in the related art, a blue light emitting chip 30 and a green light emitting chip 40 are mounted on a package body 10, and a red phosphor 22 is attached to a mold 20 Thereby realizing a white light emitting device package.

However, since the blue light emitting chip 30 and the green light emitting chip 40 are grown on different substrates, the physical properties of the epilayer between the light emitting chips are different from each other, , There is a problem that a difference in mechanical reliability occurs.

Further, in such a conventional technique, a complicated circuit structure is generated as the wire process progresses for each light emitting chip, and a problem that separate driving circuits are required for a plurality of chips occurs. For example, the first wire W1 and the second wire 2 are required for the blue light emitting chip 30, the third wire W3 and the fourth wire W2 are also required for the green light emitting chip 40, A wire W4 is required, and a driving circuit is required for each light emitting chip individually.

Further, in the prior art, there is a difference in operating voltage between light emitting chips, which is difficult to control the circuit driving.

Further, in this conventional technique, the wire process must be performed for each light emitting chip, and a protection element (not shown) must be provided for each light emitting chip, so that it is difficult to provide a compact light emitting device package .

Also, in such a conventional technique, since a plurality of light emitting chips are individually present, heat generation is so rapid that it is difficult to cope with heat radiation, and thermal characteristics are degraded.

In the prior art, there is a technique (not shown) for forming a plurality of light emitting layers on a substrate. However, in the related art, as each light emitting layer is vertically overlapped, cross talk between light emitted from each light emitting layer ), There arises a problem of light absorption.

For example, according to the related art, a blue light having a wavelength of about 450 nm emitted from the first active layer excites a second active layer emitting light having a green wavelength, so that photo luminescence is generated in the second active layer, There is a problem that the light output of light is lowered.

In addition, in the prior art, there is a problem that the excitation characteristic of the phosphor for the light emitted for each light emitting chip can not be taken into account and the optical characteristic is deteriorated. For example, there is a problem that the light flux of the light emitting device package is lowered due to the problem that the red phosphor absorbs the light of the green wavelength.

One of the technical problems of the embodiments is to provide a light emitting device capable of minimizing a difference in physical properties of an epilayer between light emitting layers even in the presence of a plurality of light emitting layers and minimizing a difference in electrical and mechanical reliability during operation of the light emitting device, A light emitting device package and a lighting device including the same are provided.

Further, one of the technical problems of the embodiments is to provide a light emitting device, a light emitting device package, and a light emitting device package capable of solving the problem of light absorption by occurrence of cross talk between light emitted from each light emitting layer, even in the presence of a plurality of light emitting layers And a lighting device.

Also, one of the technical problems of the embodiments is to provide a light emitting device, a light emitting device package, and a lighting device including the same, which can prevent a complicated circuit structure or complicated electric driving even if a plurality of light emitting layers exist.

One of the technical problems of the embodiments is to provide a light emitting device and a light emitting device capable of solving the difficult problem of providing a compact light emitting device package as the sizes of the light emitting device and the light emitting device package increase, Package and a lighting device including the same.

Further, one of the technical problems of the embodiments is to provide a light emitting device, a light emitting device package, and a lighting device including the same, which can solve the problem of heat dissipation and thermal property degradation even when a plurality of light emitting layers are present.

Further, one of the technical problems of the embodiments is to provide a light emitting device, a light emitting device package, and a light emitting device package capable of solving the problem that the optical characteristic is lowered due to the problem that the light emitting layer is absorbed by the phosphor according to the light of the wavelength, And a lighting device.

The technical problem in the embodiment is not limited to the content described in this item, but includes a technical problem that can be grasped through the entire specification.

A light emitting device according to an embodiment includes a first light emitting structure 110 including a first semiconductor layer 112 of a first conductivity type, a first active layer 114, and a second semiconductor layer 116 of a second conductivity type; A third semiconductor layer 122 of a first conductivity type, a second active layer 124, and a fourth semiconductor layer 126 of a second conductivity type, which are disposed on one side of the first light emitting structure 110, A second light emitting structure (120); The first semiconductor layer 112 of the first conductivity type and the third semiconductor layer 122 of the first conductivity type of the second light emitting structure 120 of the first light emitting structure 110 are electrically connected in common A first electrode unit 160; And the second semiconductor layer 116 of the second conductivity type of the first light emitting structure 110 and the fourth semiconductor layer 126 of the second conductivity type of the second light emitting structure 120 are electrically connected in common And a second electrode unit 150 formed on the first electrode unit 150.

The light emitting device package according to the embodiment may include the light emitting device.

Further, the illumination device according to the embodiment may include a light emitting unit including the light emitting element.

One of the technical effects of the embodiments is that a light emitting device capable of minimizing a difference in physical properties of an epilayer between light emitting layers even in the presence of a plurality of light emitting layers and minimizing a difference in electrical and mechanical reliability during operation of the light emitting device, A light emitting device package and a lighting apparatus including the same.

In addition, one of the technical effects of the embodiment is that the light emitting device, the light emitting device package, and the light emitting device package can solve the problem of light absorption due to cross talk between light emitted from each light emitting layer even in the presence of a plurality of light emitting layers Can be provided.

Further, one of the technical effects of the embodiment can provide a light emitting device, a light emitting device package, and a lighting device including the same, which can prevent a complicated circuit structure or complicated electric driving even if a plurality of light emitting layers are present .

In addition, one of the technical effects of the embodiment is to provide a light emitting device and a light emitting device capable of solving the difficult problem of providing a compact light emitting device package as the size of the light emitting device or the light emitting device package increases, A package and a lighting device including the same can be provided.

In addition, one of the technical effects of the embodiment is to provide a light emitting device, a light emitting device package, and a lighting device including the same, which can solve the problem of heat dissipation and deterioration of thermal characteristics even in the presence of a plurality of light emitting layers.

In addition, one of the technical effects of the embodiment is to provide a light emitting device, a light emitting device package, and a light emitting device package capable of solving the problem that the optical characteristic is deteriorated due to the problem that the light emitting layer is absorbed by the phosphor according to the light of the wavelength, And the like.

The technical effect in the embodiment is not limited to the contents described in this item, but includes technical effects that can be grasped through the specification or drawings.

1 is a cross-sectional view of a conventional light emitting device package;
2 is a plan view and a cross-sectional view of a light emitting device according to an embodiment.
3A to 3B are optical characteristic comparison data of the light emitting device package according to the comparative example and the example.
4A to 4E are sectional views of the first half of the manufacturing method of the light emitting device according to the first embodiment.
FIGS. 5A to 5D are sectional views of the first half of the manufacturing method of the light emitting device according to the second embodiment.
6A to 6E are sectional views of the first half of the manufacturing method of the light emitting device according to the third embodiment.
FIGS. 7 to 10 are cross-sectional views of the second half of the method of manufacturing the light emitting device according to the embodiment. FIG.
11 is a cross-sectional view of a light emitting device package according to an embodiment.
12A to 12B are optical characteristic comparison data of the light emitting device package according to the comparative example and the example.
13 is a perspective view of a lighting apparatus according to an embodiment.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments that can be specifically realized for solving the above problems will be described with reference to the accompanying drawings.

In describing an embodiment, when it is described as being formed "on or under" of each element, an upper or lower (on or under) Wherein both elements are in direct contact with each other or one or more other elements are indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

The semiconductor device may include various electronic devices such as a light emitting device and a light receiving device. The light emitting device and the light receiving device may include the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer. The semiconductor device according to this embodiment may be a light emitting device. The light emitting device emits light by recombination of electrons and holes, and the wavelength of the light is determined by the energy band gap inherent to the material. Thus, the light emitted may vary depending on the composition of the material.

(Example)

2 is a plan view and a cross-sectional view of a light emitting device according to an embodiment.

For example, FIG. 2 (t) is a plan view of the light emitting device 100 according to the embodiment, FIG. 2 (a) is a cross- 2 (t) taken along the line BB '. 2 (t), the AA 'line and the BB' line may be parallel to the first axis direction X and the second axis direction Y may be parallel to the first axis direction X Lt; / RTI >

FIG. 2 illustrates a horizontal flat type light emitting device. However, the horizontal flat type light emitting device is not limited thereto, and can be applied to a vertical type light emitting device.

Referring to FIG. 2, the light emitting device 100 includes a first light emitting structure 110, a second light emitting structure 120, a first electrode unit 160, a second electrode unit 150, A light emitting layer 130, and a light transmitting ohmic layer 140.

For example, the light emitting device 100 according to the embodiment includes a first semiconductor layer 112 of a first conductivity type, a first active layer 114, and a second semiconductor layer 116 of a second conductivity type. A second active layer 124 of a first conductive type and a fourth active layer 124 of a second conductive type, which are disposed on one side of the first light emitting structure 110, A first semiconductor layer 112 of the first conductivity type and a second semiconductor layer 112 of the second light emitting structure 120 of the first light emitting structure 110, A first electrode unit 160 electrically connected to the third semiconductor layer 122 of the first conductivity type in common; And the second semiconductor layer 116 of the second conductivity type of the first light emitting structure 110 and the fourth semiconductor layer 126 of the second conductivity type of the second light emitting structure 120 are electrically connected in common And a second electrode unit 150 formed on the first electrode unit 150.

The embodiment may include an insulating layer 130 disposed between the second electrode unit 150 and the first light emitting structure 110 and between the second electrode unit 150 and the second light emitting structure 120 .

In addition, the embodiment may include a light transmitting ohmic layer 140 disposed between the insulating layer 130 and the second electrode unit 150.

Technical characteristics of the light emitting device 100 according to an embodiment for solving the technical problems will be described below with reference to FIG.

<Substrate>

Referring to FIGS. 2 (a) and 2 (b), the substrate 105 in the embodiment may be formed of a material having excellent thermal conductivity, and may be a conductive substrate or an insulating substrate. For example, the substrate 105 is GaAs, sapphire (Al ₂ O _3), SiC, Si, GaN, ZnO, GaP, InP, Ge, and Ga ₂ 0 ₃ May be used. A concavo-convex structure (not shown) may be formed on the substrate 105 to improve light extraction efficiency.

In an embodiment, a buffer layer (not shown) may be formed on the substrate 105. The buffer layer may mitigate lattice mismatch between the first and second light emitting structures 110 and 120 and the substrate 105 formed thereafter. The buffer layer may be formed of at least one of Group III-V compound semiconductor such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. An undoped semiconductor layer (not shown) may be formed on the buffer layer.

&Lt; First light emitting structure, second light emitting structure &

2 (a) and 2 (b), the embodiment includes a first semiconductor layer 112 of a first conductivity type, a first active layer 114, and a second semiconductor layer 116 of a second conductivity type, A second active layer 124 and a second active layer 124 disposed on one side of the first light emitting structure 110 and having a first conductivity type, And a second light emitting structure 120 including a fourth semiconductor layer 126 of a conductive type.

The first and second light emitting structures 110 and 120 may emit light of different wavelengths. For example, the first active layer 114 of the first light emitting structure 110 may emit light of a blue wavelength, and the second active layer 124 of the second light emitting structure 120 may emit green light. (Green), but it is not limited thereto.

For example, the first semiconductor layer 112 of the first conductivity type of the first light emitting structure 110 and the third semiconductor layer 122 of the first conductivity type of the second light emitting structure 120 may be formed of a semiconductor compound For example, Group 3-Group 5, Group 2-Group 6, and the like, and the first conductivity type dopant may be doped. For example, when the first semiconductor layer 112 of the first conductivity type and the third semiconductor layer 122 of the first conductivity type are n-type semiconductor layers, Si, Ge, Sn, Se , Te, and the like. The first semiconductor layer 112 of the first conductivity type and the third semiconductor layer 122 of the first conductivity type may be In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? , 0? X + y? 1). For example, the first semiconductor layer 112 of the first conductivity type and the third semiconductor layer 122 of the first conductivity type may be formed of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, , GaP, AlGaP, InGaP, AlInGaP, and InP.

The first active layer 114 of the first light emitting structure 110 and the second active layer 124 of the second light emitting structure 120 may have a single quantum well structure, a multi quantum well structure (MQW) , A quantum-wire structure, or a quantum dot structure. For example, the first active layer 114 and the second active layer 124 may include a quantum well / quantum wall structure. For example, the first active layer 114 and the second active layer 124 may be formed of one or more of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs / AlGaAs, InGaP / AlGaP, But the present invention is not limited thereto.

The second semiconductor layer 116 of the second conductivity type of the first light emitting structure 110 and the fourth semiconductor layer 126 of the second conductivity type of the second light emitting structure 120 are formed of a semiconductor compound . For example, the second semiconductor layer 116 of the second conductivity type and the fourth semiconductor layer 126 of the second conductivity type may be formed of compound semiconductors such as Group 3-Group 5, Group 2-Group 6, And a second conductivity type dopant may be doped. The second semiconductor layer 116 of the second conductivity type and the fourth semiconductor layer 126 of the second conductivity type may be formed of a Group 3-Group-5 compound semiconductor doped with a second conductive dopant, for example, In _x Al _y Ga _1-xy N (0? X? 1, 0? Y? 1, 0? X + y? 1). In the case where the second conductive type second semiconductor layer 116 and the second conductive type fourth semiconductor layer 126 are p-type semiconductor layers, the second conductive type dopant may be a p-type dopant such as Mg, Zn, Ca, Sr, Ba, and the like.

One of the technical problems of the embodiments is to provide a light emitting device capable of minimizing a difference in physical properties of an epilayer between light emitting layers even in the presence of a plurality of light emitting layers and minimizing a difference in electrical and mechanical reliability during operation of the light emitting device, A light emitting device package and a lighting device including the same are provided.

In order to solve such a problem, in the embodiment, as shown in FIGS. 2A and 2B, the first and second light emitting structures 110 and 120 of the first and second light emitting structures 110 and 120 of the embodiment are the same, Layer 112 may be grown.

As a result, the first semiconductor layer 112 of the first conductivity type is shared by the growth template, so that the first and second semiconductor layers 110 and 120 of the first and second light emitting structures 120 and 120, The present invention provides a light emitting device and a light emitting device capable of minimizing differences in electrical and mechanical reliability during operation of a light emitting device package by minimizing a difference in physical properties of an epilayer between light emitting layers even when a plurality of light emitting layers exist, , A light emitting device package, and a lighting device including the same.

Next, one of the technical problems of the embodiments is to provide a light emitting device, a light emitting device package, and a light emitting device package capable of solving the problem of light absorption due to cross talk between light emitted from each light emitting layer, And a lighting device including the same.

2 (a), the height of the first active layer 114 of the first light emitting structure 110 and the height of the second active layer 124 of the second light emitting structure 120 ) May be different. For example, the first distance D1 from the bottom of the first semiconductor layer 112 of the first conductivity type to the first active layer 114 is greater than the distance D1 from the bottom of the first semiconductor layer 112 of the first conductivity type May be longer than a second distance (D2) to the second active layer (124).

The first distance D1 from the top surface of the substrate 105 to the first active layer 114 is greater than the second distance D2 from the top surface of the substrate 105 to the second active layer 124, ).

Accordingly, the first active layer 114 of the first light emitting structure 110 may be disposed higher than the second active layer 124 of the second light emitting structure 120.

The heights of the first active layer 114 of the first light emitting structure 110 and the second active layer 124 of the second light emitting structure 120 are different from each other, There is a technical effect that the problem of light absorption can be solved by generating cross talk between light emitted from the light emitting layer.

For example, the first active layer 114 of the first light emitting structure 110 may be disposed higher than the second active layer 124 of the second light emitting structure 120, The second active layer 124 emits blue light and the second active layer 124 emits green light so that the first active layer 114 is arranged higher than the second active layer 124, It is possible to reduce the possibility that blue light emitted upward from the first active layer 114 can be absorbed into the second active layer 124, and thus, even when a plurality of light emitting layers exist, cross talk between light emitted from each light emitting layer ), There is a technical effect that can solve the problem of the reduction of the luminous intensity due to the problem of light absorption.

For example, FIGS. 3A and 3B illustrate optical spectra of light emitting device packages according to Comparative Examples and Examples. The embodiment of FIG. 3B is an example in which the light emitting device 100 according to the embodiment shown in FIG. 2 is mounted on a package body (refer to FIG. 11) This is an example in which a red phosphor is employed.

As shown in FIG. 3A, the comparative example has a light efficiency of about 53.9%, whereas the light emitting device package according to the embodiment has a light efficiency of about 88.1% as shown in FIG. 3B.

According to the embodiment, even if a plurality of light emitting layers are present, there is a technological effect that light efficiency is significantly increased due to the problem of light absorption due to generation of cross talk between light emitted from each light emitting layer.

Referring to FIG. 2 again, the second light emitting structure 120 may be spaced apart from the first light emitting structure 110. For example, the first light emitting structure 110 may be formed as a finger structure having protrusions protruding in the second axis direction Y, and the second light emitting structure 120 may include a first light emitting structure 110, respectively. As a result, according to the embodiment, the light emitting efficiency of the first light emitting structure 110 and the second light emitting structure 120 is optimized.

In addition, the area of the first light emitting structure 110 may be equal to or wider than the area of the second light emitting structure 120, thereby improving light efficiency. The width of the region of the light emitting structure can be based on the width of the plane with reference to FIG. 2 (t), which is a plan view of FIG.

For example, when the first light emitting structure 110 emits light having a blue wavelength and the second light emitting structure 120 emits light having a green wavelength, the region of the first light emitting structure 110 The width of the second light emitting structure 120 may be about 1 to 4 times as large as the width of the second light emitting structure 120, thereby improving the light efficiency.

The first light emitting structure 110 emitting light of a blue wavelength than the second light emitting structure 120 emitting green wavelength light is formed in consideration of the fact that the visibility of the green wavelength light is higher than that of the blue wavelength light Can be relatively broader.

In addition, in the embodiment, in consideration of the fact that the red phosphor absorbs more blue light than the green light, it emits light of blue wavelength rather than the width of the second light emitting structure 120 emitting green light The width of the first light emitting structure 110 can be relatively wider.

On the other hand, when the width of the first light emitting structure 110 is larger than four times the width of the second light emitting structure 120, the distribution of light of the blue wavelength is too high, so that it is difficult to realize an appropriate white light.

The first electrode unit 160, the second electrode unit 150, the insulating layer 130, the light-transmitting ohmic layer 140,

Referring to FIG. 2, the first semiconductor layer 112 of the first conductivity type of the first light emitting structure 110 and the third semiconductor layer 112 of the first conductivity type of the second light emitting structure 120 of FIG. A first electrode portion 160 electrically connected to the layer 122 in common; And the second semiconductor layer 116 of the second conductivity type of the first light emitting structure 110 and the fourth semiconductor layer 126 of the second conductivity type of the second light emitting structure 120 are electrically connected in common And a second electrode unit 150 formed on the first electrode unit 150.

The first electrode unit 160 and the second electrode unit 150 may be formed of one selected from the group consisting of titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum Layer or multilayer including at least one of platinum (Pt), tin (Sn), silver (Ag), phosphor (P), and aluminum (Al). For example, silver (Ag) or aluminum (Ag) is formed on the surfaces of the first electrode unit 160 and the second electrode unit 150 to improve the efficiency of reflection of incident light, . Also, the first electrode unit 160 and the second electrode unit 150 may include an Au layer to prevent corrosion due to moisture, thereby improving electrical reliability.

Referring to FIGS. 2 (a) and 2 (b), a predetermined recess R is formed between the first and second light emitting structures 110 and 120, 1 semiconductor layer 112E may be formed. The exposed first semiconductor layer 112E may be a first conductive semiconductor layer and may extend to the first semiconductor layer 112 of the first conductivity type. Also, the second light emitting structure 120 may be formed on the first semiconductor layer 112 of the first conductivity type on the substrate 105.

One of the technical problems of the embodiments is to provide a light emitting device, a light emitting device package, and a lighting device including the same, which can prevent a complicated circuit structure or complicated electric driving even if a plurality of light emitting layers are present.

One of the technical problems of the embodiments is to provide a light emitting device and a light emitting device capable of solving the difficult problem of providing a compact light emitting device package as the sizes of the light emitting device and the light emitting device package increase, Package and a lighting device including the same.

Referring to FIG. 2, the first electrode unit 160 may be formed on the exposed first semiconductor layer 112E disposed between the first and second light emitting structures 110 and 120 in the exemplary embodiment. have. The first electrode unit 160 may include a first pad electrode 162 and a first branched electrode 164 extending to one side or both sides of the first pad electrode 162.

For example, referring to FIG. 2 (t) and FIG. 2 (a), the exposed first semiconductor layer 112E disposed between the first light emitting structure 110 and the second light emitting structure 120 in the embodiment, A first pad electrode 162 and a first branched electrode 164 may be formed on the first pad electrode 162. [

Accordingly, the first electrode unit 160 may be connected to the first semiconductor layer 112 of the first conductive type and the first conductive type of the second light emitting structure 120 of the first light- Since the third semiconductor layer 122 is electrically connected in common with the third semiconductor layer 122, there is a technical feature that it is possible to prevent a complicated circuit structure from occurring even when a plurality of light emitting layers are present or complicate electrical driving.

The first electrode unit 160 may be formed on the first semiconductor layer 112 of the first conductivity type and the first conductivity type of the second light emitting structure 120 of the first light- 3 semiconductor layer 122, the size of the light emitting device or the light emitting device package can be reduced even if a plurality of light emitting layers are present, thereby providing a compact and light emitting device and a light emitting device package capable of providing a light emitting device package It is effective.

In addition, a region between the first and second light emitting structures 110 and 120 may be a boundary region between the first and second light emitting structures 110 and 120, The exposed first semiconductor layer 112E for forming the first electrode part 160 functioning as a common electrode is formed in the region between the first and second structures 110 and 120, There is a complex technical effect that it is possible to improve the quality of the light emitting device by removing a region having an issue in crystal quality through a predetermined recess forming process for partially removing the boundary region of the structure 120. [

Next, an embodiment may include an insulating layer (not shown) disposed between the second electrode unit 150 and the first light emitting structure 110 and between the second electrode unit 150 and the second light emitting structure 120 130, and embodiments may include a light-transmitting ohmic layer 140 disposed between the insulating layer 130 and the second electrode unit 150.

The insulating layer 130 may be formed of an oxide such as SiO ₂ , SixOy, Al ₂ O ₃ or TiO ₂ , or a nitride layer such as Si ₃ N ₄ , Si x N y, SiO x N y, or AlN.

The transmissive ohmic layer 140 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO) tin oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZO nitride, AGZO (IGZO), ZnO, , RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO.

Referring to FIGS. 2 (a) and 2 (b), the light-transmissive ohmic layer 140 is formed on the first and second light-emitting structures 110 and 120, .

2 (a), the insulating layer 130 is formed in a region vertically overlapping the second branched electrodes 154, thereby improving the current diffusion efficiency through the current blocking function.

2 (b), the insulating layer 130 is formed in a region vertically overlapping the second branched electrode 154, and extends to the recessed region to form a bridge-shaped translucent ohmic layer And the second branched electrode 154 may be formed on the side surfaces of the first active layer 114 and the second active layer 124 in which the insulating layer 130 is exposed. Current and the like can be prevented and the electrical reliability can be improved.

The insulating layer 130 is disposed below the region where the second electrode unit 150 is formed so that the current spreading function and the second branched electrode 154 are formed not only in the second light emitting structure 120, Since the second electrode unit 150 functions as a common electrode of the first and second light emitting structures 110 and 120 by extending to one light emitting structure 110, There is a technical effect that a complicated circuit structure or complication of electric driving can be prevented. Further, according to the embodiment, it is possible to provide a compact light emitting device and a light emitting device package even in the presence of a plurality of light emitting layers There is a technical effect.

2 (a), the horizontal width of the insulating layer 130 is formed to be larger than the horizontal width of the second branched electrodes 154 of the first electrode unit 150, thereby improving the current spreading function Since the area of the insulating layer 130 disposed below the first electrode unit 150 is formed to be larger than the area of the first electrode unit 150, it is possible to prevent an electrical short circuit, There is a mixed technical effect.

On the other hand, in the prior art, there is a difference in operating voltage between light emitting chips, which makes it difficult to control circuit driving.

In order to solve the above technical problem and to secure the effective function of the first electrode unit 160 and the second electrode unit 150 serving as the common electrode, the first and second light emitting structures 110 and 2 By controlling the operation voltage of the light emitting structure 120 to the same or similar level, efficient circuit driving by the common electrode can be achieved.

For example, in an embodiment, if the operating voltage of the second light emitting structure 120 is lower than the operating voltage of the first light emitting structure 110, If the amount of the dopant is reduced, the operating voltage of the second light emitting structure 120 and the first light emitting structure 110 may be controlled to be the same or similar to each other by lowering the carrier concentration.

If the operating voltage of the second light emitting structure 120 is higher than the operating voltage of the first light emitting structure 110, the first conductive type third semiconductor layer 122 may be doped with the first conductive type dopant The operating voltage of the second light emitting structure 120 and the first light emitting structure 110 may be controlled to be equal or similar to each other by increasing the carrier concentration.

Further, by controlling the carrier concentration and controlling the thickness of the third semiconductor layer 122 of the first conductivity type to control the conductivity of the third semiconductor layer 122 of the first conductivity type, The operation voltage of one light emitting structure 110 can be controlled to be the same or similar level.

One of the technical effects of the embodiments is that a light emitting device capable of minimizing a difference in physical properties of an epilayer between light emitting layers even in the presence of a plurality of light emitting layers and minimizing a difference in electrical and mechanical reliability during operation of the light emitting device, A light emitting device package and a lighting apparatus including the same.

In addition, one of the technical effects of the embodiment is that the light emitting device, the light emitting device package, and the light emitting device package can solve the problem of light absorption due to cross talk between light emitted from each light emitting layer even in the presence of a plurality of light emitting layers Can be provided.

Further, one of the technical effects of the embodiment can provide a light emitting device, a light emitting device package, and a lighting device including the same, which can prevent a complicated circuit structure or complicated electric driving even if a plurality of light emitting layers are present .

In addition, one of the technical effects of the embodiment is to provide a light emitting device and a light emitting device capable of solving the difficult problem of providing a compact light emitting device package as the size of the light emitting device or the light emitting device package increases, A package and a lighting device including the same can be provided.

<Manufacturing Method>

Hereinafter, a method of manufacturing a light emitting device according to an embodiment will be described with reference to FIGS. 4A to 7D.

4A to 4E are sectional views of the first half of the manufacturing method of the light emitting device according to the first embodiment, and are an example of growth of top-down growth.

The first light emitting structure 110 may be formed on the substrate 105 as shown in FIG. The first light emitting structure 110 may include a first semiconductor layer 112 of a first conductivity type, a first active layer 114, and a second semiconductor layer 116 of a second conductivity type sequentially. The first light emitting structure 110 may emit light having a blue wavelength, but the present invention is not limited thereto.

Then, a first mask M1 is formed as shown in FIG. 4B, and a first or a second dry etch process E1 is performed using the first mask M1 as an etch mask to form a predetermined recess R ) Can be formed.

이하의 깊이로 제어함으로써 이후 성장되는 제2 발광구조물(120)의 성장 효율을 증대시킬 수 있다.A part of the first light emitting structure 110 may be removed through the first etching step E1 to expose a part of the upper surface of the first semiconductor layer 112 of the first conductivity type, May be controlled in consideration of the growth of the second light emitting structure 120 to be formed later. According to an embodiment, the depth of the recess R is about 1

The growth efficiency of the second light emitting structure 120 to be grown later can be increased.

Next, as shown in FIG. 4D, after the second mask M2 is further formed, the second light emitting structure 120 may be formed as shown in FIG. 4E. The second light emitting structure 120 may have a structure in which a third semiconductor layer 122 of a first conductivity type, a second active layer 124, and a fourth semiconductor layer 126 of a second conductivity type are sequentially arranged . At this time, the regrown first semiconductor layer 112a of the first conductivity type may be formed to have a predetermined thickness to improve the quality of the crystallization by relaxing the film damage region due to the recess forming process, the mask forming process and the removing process. The second light emitting structure 120 may be formed on the first semiconductor layer 112a of the first conductivity type, but is not limited thereto.

The second light emitting structure 120 may emit green light but is not limited thereto. Then, the first mask M1 and the second mask M2 may be removed.

5A to 5D are cross-sectional views illustrating a bottom-up growth method of a method of manufacturing a light emitting device according to a second embodiment of the present invention.

5A, a buffer layer 111 is formed on a substrate 105, a first mask layer M3 is formed after forming a part of a first semiconductor layer 112 of a first conductivity type, M3) may be used as a growth mask to form the first light emitting structure 110.

5C, a fourth mask M4 is formed on the first light emitting structure 110 after the third mask M3 is removed, and the fourth mask M4 is formed as a growth mask The second light emitting structure 120 can be grown. At this time, the regrown first semiconductor layer 112a of the first conductivity type may be formed to have a predetermined thickness to improve the quality of the crystallization by relaxing the film damage region due to the recess forming process, the mask forming process and the removing process. Then, the fourth mask M4 may be removed.

Next, FIGS. 6A to 6E are sectional views of the first half of the manufacturing method of the light emitting device according to the third embodiment, and show an etching stop layer.

First, as shown in FIG. 6A, the etch stop layer 190 may be formed after the first light emitting structure 110 is formed on the substrate 105. The etch stop layer 190 may be formed of a material having an etching property different from that of the first light emitting structure 110. For example, the etch stop layer 190 may be formed of nitride, but is not limited thereto.

After the formation of the fifth mask M5 as shown in FIG. 6B, the upper surface of the first semiconductor layer 112 of the first conductivity type may be exposed through the second etching process (E2) as shown in FIG. 6C have. The fifth mask M5 may be a material having an etching property different from that of the etch stop layer 190. [ For example, the fifth mask (M5) may be formed of an oxide such as SiO ₂ is not limited thereto.

Next, as shown in FIG. 6D, a first semiconductor layer 112a of a first conductivity type is formed on the exposed first conductivity type semiconductor layer 112 to form a first semiconductor layer 112a of a film- The crystal quality can be improved.

After the fifth mask M5 is removed, the second light emitting structure 120 may be formed on the re-grown first semiconductor layer 112a of the first conductivity type. At this time, the material of the second light emitting structure 120 may be formed on the etch stop layer 190, but the present invention is not limited thereto.

Next, as shown in FIG. 6E, the second light emitting structure 120 may be formed by disposing the sixth mask M6 on the second light emitting structure 120 and then removing the remaining second light emitting structure material. Then, the sixth mask M6 and the etch stop layer 190 may be removed, respectively.

FIGS. 7 to 10 are cross-sectional views of the latter half of the method of manufacturing the light emitting device according to the embodiment.

Referring to FIG. 7, a recess R may be formed by partially removing a boundary region between the first and second light emitting structures 110 and 120 by using a predetermined etching mask (not shown) .

As shown in FIG. 8, the insulating layer 130 may be formed on the first and second light emitting structures 110 and 120 corresponding to the regions where the second electrode unit 150 is to be formed.

9, the translucent ohmic layer 140 may be formed except for the recessed area.

10, the first electrode unit 160 and the second electrode unit 150 may be formed.

Thus, the light emitting device 100 according to the embodiment can be formed.

11 is a cross-sectional view of the light emitting device package according to the embodiment.

A light emitting device package according to an embodiment includes a package body 210 in which a light emitting device 100 is disposed, a first package electrode 221, a second package electrode 222, And first and second wires W1 and W2 for electrically connecting the first and second package electrodes 221 and 222 to the light emitting device 100. [ The light emitting device package may include a phosphor 22 in a predetermined molding part 220.

There is a problem that the excitation characteristic of the phosphor with respect to the light emitted for each light emitting chip can not be taken into consideration in the prior art, thereby deteriorating optical characteristics. For example, there is a problem that the light flux of the light emitting device package is lowered due to the problem that the red phosphor absorbs the light of the green wavelength.

In order to solve such a technical problem, in the embodiment, the red phosphor may be disposed on the first light emitting structure 110, but may not be overlapped with the second light emitting structure 120 in the vertical direction.

For example, when the first light emitting structure 110 emits light having a blue wavelength, a predetermined mask is disposed on the second light emitting structure, and the red light emitting structure 110 is formed on the first light emitting structure 110 by the conformal coating, The wavelength emitted by the second light emitting structure 120 is prevented from being absorbed by the red phosphor, thereby improving the color reproduction rate.

12A to 12B are optical characteristic comparison data of the light emitting device package according to the comparative example and the embodiment.

For example, FIG. 12A shows the color reproduction ratio of the comparative example, and when the phosphors are arranged on a plurality of light emitting chips, the color reproduction ratio is about 118% as compared with a single blue chip. However, as shown in FIG. 12B, There is a technical effect which shows a remarkably improved color reproduction rate of about 137.6%.

12B, the reason for the wider color coordinates is that the half width (color purity) of the green light emitted from the light emitting layer of the epi layer is higher than the green light emitted from the phosphor. Specifically, in the embodiment, since green light having high color purity can be effectively implemented in the epi layer as a light emitting layer, green light made using phosphors can be effectively implemented, and a color reproducibility on a color coordinate can be ensured so that a specific color reproducibility There is a technical effect.

According to the embodiments, there is provided a light emitting device, a light emitting device package, and a lighting device including the same, which can solve the problem that the optical characteristic is deteriorated due to the problem that the light emitting layer is absorbed by the phosphor according to the light of the wavelength, Can be provided.

In addition, according to the embodiment, in comparison with the prior art in which a plurality of light emitting chips are disposed to attempt high color reproduction, the heat generation itself is reduced by a compact size rather than the existing ones even when a plurality of light emitting layers are present, A light emitting device package, and a lighting device including the same, which can solve the problem of heat dissipation and thermal degradation because the problems of heat dissipation and thermal weakness are remarkably improved due to similarity of physical properties between light emitting structures, Device can be provided.

13 is a perspective view of a lighting apparatus according to an embodiment.

A light guide plate, a prism sheet, a diffusion sheet, a fluorescent sheet, and the like, which are optical members, may be disposed on a path of light emitted from the light emitting device package.

The light emitting device package according to the embodiment may be applied to a backlight unit, a lighting unit, a display device, a pointing device, a lamp, a streetlight, a vehicle lighting device, a vehicle display device, a smart watch, and the like.

13, the lighting apparatus according to the embodiment includes a cover 2100, a light source module 2200, a heat discharger 2400, a power supply unit 2600, an inner case 2700, and a socket 2800 . Further, the illumination device according to the embodiment may further include at least one of the member 2300 and the holder 2500. The light source module 2200 may include a light emitting device or a light emitting device package according to the embodiment.

The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250. The member 2300 is disposed on the upper surface of the heat discharging body 2400 and has guide grooves 2310 through which the plurality of light source portions 2210 and the connector 2250 are inserted.

The holder 2500 blocks the receiving groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 housed in the insulating portion 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510.

The power supply unit 2600 may include a protrusion 2610, a guide 2630, a base 2650, and an extension 2670. The inner case 2700 may include a molding part together with the power supply part 2600. The molding part is a hardened portion of the molding liquid so that the power supply unit 2600 can be fixed inside the inner case 2700.

The features, structures, effects, and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

The first semiconductor layer 112 of the first conductivity type, the first active layer 114,
The second semiconductor layer 116 of the second conductivity type, the first light emitting structure 110,
The third semiconductor layer 122 of the first conductivity type, the second active layer 124,
A fourth semiconductor layer 126 of a second conductivity type, a second light emitting structure 120;
The first electrode unit 160, the second electrode unit 150,

Claims (10)

A first light emitting structure including a first semiconductor layer of a first conductivity type, a first active layer, and a second semiconductor layer of a second conductivity type;
A second light emitting structure disposed on one side of the first light emitting structure and including a third semiconductor layer of a first conductivity type, a second active layer, and a fourth semiconductor layer of a second conductivity type;
A first electrode part electrically connected in common with a first semiconductor layer of a first conductivity type of the first light emitting structure and a third semiconductor layer of a first conductivity type of the second light emitting structure; And
And a second electrode part electrically connected in common with the second semiconductor layer of the second conductivity type of the first light emitting structure and the fourth semiconductor layer of the second conductivity type of the second light emitting structure
Wherein a predetermined recess is formed between the first and second light emitting structures and the exposed first semiconductor layer is formed,
Wherein the first electrode portion is disposed on the exposed first semiconductor layer disposed between the first light emitting structure and the second light emitting structure.
The method according to claim 1,
Wherein a height of the first active layer of the first light emitting structure is different from a height of the second active layer of the second light emitting structure.
3. The method of claim 2,
Wherein a first distance from a bottom surface of the first semiconductor layer to the first active layer is longer than a second distance from a bottom surface of the first semiconductor layer to the second active layer.
The method according to claim 1,
Wherein the first light emitting structure is formed as a finger structure having a projection projecting in a second axial direction,
Wherein the second light emitting structure is spaced apart from the first light emitting structure of the finger structure.
The method according to claim 1,
And an insulating layer disposed between the second electrode portion and the first light emitting structure and between the second electrode portion and the second light emitting structure.
6. The method of claim 5,
And a light-transmissive ohmic layer disposed between the insulating layer and the second electrode.
A light emitting device package comprising the light emitting element according to any one of claims 1 to 6.
8. The method of claim 7,
A package body in which the light emitting device is disposed;
A first package electrode disposed on the package body, a second package electrode disposed on the package body,
A first wire electrically connecting the first electrode portion of the light emitting device and the first package electrode;
A second wire electrically connecting the second electrode portion of the light emitting device to the second package electrode; And
And a phosphor disposed on the light emitting element.
9. The method of claim 8,
Wherein the phosphor is disposed on the first light emitting structure so as not to overlap with the second light emitting structure.
A lighting device comprising a light-emitting unit comprising the light-emitting element according to any one of claims 1 to 6.

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