KR102007401B1 - Light emitting device - Google Patents
Light emitting device Download PDFInfo
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- KR102007401B1 KR102007401B1 KR1020120068602A KR20120068602A KR102007401B1 KR 102007401 B1 KR102007401 B1 KR 102007401B1 KR 1020120068602 A KR1020120068602 A KR 1020120068602A KR 20120068602 A KR20120068602 A KR 20120068602A KR 102007401 B1 KR102007401 B1 KR 102007401B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
Abstract
The light emitting device according to the embodiment may include a first conductivity type semiconductor layer having a concave-convex pattern formed on one surface exposed to the outside; A second conductivity type semiconductor layer; And an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the first conductive semiconductor layer includes a pattern forming layer containing Al, and the uneven pattern includes the first conductive layer. At least a part of the type semiconductor layer and the pattern forming layer are selectively etched and formed.
Description
The embodiment relates to a light emitting device.
Light emitting devices such as light emitting diodes or laser diodes using semiconductors of Group 3-5 or 2-6 compound semiconductor materials of semiconductors have various colors such as red, green, blue and ultraviolet rays due to the development of thin film growth technology and device materials. It is possible to realize efficient white light by using fluorescent materials or combining colors, and it has low power consumption, semi-permanent life, fast response speed, safety and environmental friendliness compared to conventional light sources such as fluorescent and incandescent lamps. Has an advantage.
Therefore, a white light emitting device that can replace a fluorescent light bulb or an incandescent bulb that replaces a Cold Cathode Fluorescence Lamp (CCFL) constituting a backlight of a transmission module of an optical communication means and a liquid crystal display (LCD) display device. Applications are expanding to diode lighting devices, automotive headlights and traffic lights.
In order to obtain a high brightness light emitting diode, there are a method of improving the quality of the active layer to increase the internal quantum efficiency, and a method of increasing the light extraction efficiency by helping to emit the light generated from the active layer to the outside and collecting in the required direction.
Light extraction efficiency is determined by the ratio of electrons injected into the light emitting diode and photons emitted out of the light emitting diode, and the higher the light extraction efficiency, the brighter the light emitting diode.
In the nitride-based light emitting diode, when the light emitted from the active layer exits to the outside, total reflection condition occurs due to the difference in refractive index between the nitride semiconductor material and the outside, and light incident at an angle greater than or equal to the critical angle of total reflection does not escape to the outside and is reflected And then back inside the device.
In order to solve this problem, there is a method of forming a concave-convex pattern on the surface by etching the surface of the light emitting diode.
In addition, when a nitride semiconductor layer is directly grown on a sapphire substrate with a conventional nitride based light emitting device, crystal defects such as penetration dislocations may occur due to lattice constant mismatch between the sapphire substrate and the nitride semiconductor layer and a difference in thermal expansion coefficient. However, this defect is a problem that can penetrate the active layer and propagate to the surface of the light emitting device, so that the active layer can be destroyed or the reliability of the light output can be greatly affected.
The embodiment aims to increase the light extraction efficiency of the light emitting device.
The light emitting device according to the embodiment may include a first conductivity type semiconductor layer having a concave-convex pattern formed on one surface exposed to the outside; A second conductivity type semiconductor layer; And an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the first conductive semiconductor layer includes a pattern forming layer containing Al, and the uneven pattern includes the first conductive layer. At least a part of the type semiconductor layer and the pattern forming layer are selectively etched and formed.
The pattern forming layer may include at least two first pair structures of a first nitride layer and a second nitride layer containing Al, and the second nitride layer may have an increased Al content toward the active layer.
The pattern forming layer may include a second pair structure in which a third nitride layer, a first nitride layer, and a second nitride layer containing Al are sequentially stacked in the direction of the active layer.
The second pair structure may be spaced apart from each other in the pattern forming layer, and the second nitride layer may have an increased Al content toward the active layer.
The first nitride layer may be doped with a first conductivity type dopant.
The first nitride layer and the second nitride layer may include a composition of GaN and Al x Ga 1 - x N (0 <x <1), respectively.
The third nitride layer, the first nitride layer, and the second nitride layer each include In y Ga 1-y N (0 <y <1), GaN, Al x Ga 1- x N (0 <x <1 ) May comprise a composition.
In content y of the third nitride layer may satisfy 0.01 ≦ y ≦ 0.05.
The plurality of second nitride layers each include a composition of Al x Ga 1- x N (0 <x <1), wherein the Al content x satisfies 0.01 ≦ x ≦ 0.25, and the value of x toward the active layer is increased. Can increase.
A difference between the Al content x of the second nitride layer and the Al content x of the second nitride layer adjacent to each other may be 0.03 to 0.05.
The thicknesses of the first nitride layer and the second nitride layer may be 5 nm to 10 nm, respectively.
The first nitride layer may be the same thickness as the second nitride layer, or may be thicker than the second nitride layer.
The third nitride layer may be thinner than the first nitride layer or the second nitride layer.
The thickness of the pattern forming layer may be 100nm to 500nm.
The concave-convex pattern may include concave portions and convex portions, and a bottom surface of the convex portion may be positioned on a second nitride layer closest to the active layer.
The first electrode may be positioned on at least a portion of the first conductivity type semiconductor layer.
An electron blocking layer may be further included between the active layer and the second conductive semiconductor layer.
A conductive support substrate may be positioned on the second conductive semiconductor layer.
At least one of the transparent electrode layer and the reflective layer may be positioned between the second conductive semiconductor layer and the conductive support substrate.
The semiconductor device may further include a passivation layer surrounding side surfaces of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer.
In the light emitting device according to the embodiment, the pattern forming layer is included in the first conductive semiconductor layer, the uneven pattern is uniformly formed on one surface of the first conductive semiconductor layer, and the crystallinity quality of the active layer is improved, so that the light emitting device emits light. This can be improved.
1 is a side cross-sectional view of a light emitting device according to an embodiment;
2 is an enlarged view illustrating a pattern forming layer included in an uneven pattern of the light emitting device according to the first embodiment;
3 is a cross-sectional view illustrating a thickness of a pattern forming layer of the light emitting device according to the first embodiment;
4 is a partially enlarged view of an uneven pattern of the light emitting device according to the first embodiment;
5 is an enlarged view illustrating a pattern forming layer included in an uneven pattern of the light emitting device according to the second embodiment;
6 is an enlarged view of a pattern forming layer included in an uneven pattern of the light emitting device according to the third embodiment;
7 is a cross-sectional view showing the thickness of the pattern forming layer of the light emitting device according to the second and third embodiments;
8 is a partially enlarged view of the uneven pattern of the light emitting device according to the second and third embodiments;
9A to 9D are views showing an embodiment of a method of manufacturing a light emitting device,
10 is a view showing an embodiment of a light emitting device package,
11 is a view showing an embodiment of a head lamp including a light emitting device package,
12 illustrates an embodiment of a display device including a light emitting device package.
Hereinafter, with reference to the accompanying drawings, preferred embodiments of the present invention that can specifically realize the above object will be described.
In the description of the embodiment according to the present invention, when described as being formed on the "on or under" of each element, the above (on) or below (on) or under) includes both two elements being directly contacted with each other or one or more other elements are formed indirectly between the two elements. In addition, when expressed as “on” or “under”, it may include the meaning of the downward direction as well as the upward direction based on one element.
In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.
1 is a side cross-sectional view of a light emitting device according to an embodiment.
The
The
The first
The light emitting structure may include, for example, a metal organic chemical vapor deposition (MOCVD), a chemical vapor deposition (CVD), a plasma chemical vapor deposition (PECVD), a molecular beam growth method (PECVD). Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), or the like, may be formed using, but is not limited thereto.
The first conductivity-
The first
An
That is, a
The light emitting structure including the first
In this case, the crystallinity of the
The second conductivity-
In the present exemplary embodiment, the first
In addition, an n-type semiconductor layer (not shown) may be formed on the second
The
The
The
If the
A conductive clad layer (not shown) may be formed on or under the
An electron blocking layer (EBL) 520 may be located between the
Since the
The energy bandgap of the
The
The
The
The
The
The
The
When the
The light emitting structure and the
The
In addition, the
The
Hereinafter, each embodiment will be described in detail with reference to the accompanying drawings, in which the
2 is an enlarged view illustrating a pattern forming layer included in an uneven pattern of the light emitting device according to the first embodiment.
In the
The
In some embodiments, a first conductive dopant may be doped into the
The
The
For example, the content x of Al in each of the second nitride layers 413 may satisfy 0.01 ≦ x ≦ 0.25, and the content x of Al may be greater in the
In this case, a difference between the content x of Al in the
The
In addition, in the
3 is a cross-sectional view illustrating a thickness of a pattern forming layer included in the light emitting device according to the first embodiment.
The thickness of the
The thickness of the
In addition, the thickness d 1 of the
When the thickness d 12 of the
4 is a partially enlarged view of an uneven pattern of the light emitting device according to the first embodiment.
An
5 is an enlarged view illustrating a pattern forming layer included in an uneven pattern of the light emitting device according to the second embodiment.
In the
The
The
The
As an example, the content x of Al in the
When the
In addition, in the
7 is a cross-sectional view illustrating a thickness of a pattern formation layer included in the light emitting device according to the second embodiment.
The thickness of the first nitride layer (411) (d 21) to the thickness of the second nitride layer (413) (d 22) may be in each of 5nm to 10nm, the thickness of the first nitride layer (411) (d 21) is equal to the thickness (d 22) of the
In addition, the thickness of the
When the thickness d 22 of the
8 is a partially enlarged view of an uneven pattern of the light emitting device according to the second embodiment.
An
6 is an enlarged view illustrating a pattern forming layer included in the uneven pattern of the light emitting device according to the third embodiment.
In the
The
That is, the
The
The
The content x of Al in the
In addition, the difference between the Al content x of the
The
In addition, in the
Therefore, when there are a plurality of
7 is a cross-sectional view illustrating a thickness of a pattern formation layer included in the light emitting device according to the third embodiment.
The thickness of the first nitride layer (411) (d 21) to the thickness of the second nitride layer (413) (d 22) may be in each of 5nm to 10nm, the thickness of the first nitride layer (411) (d 21) is more than the thickness (d 22) of the
In addition, the thickness of the
When the thickness d 22 of the
8 is a partially enlarged view of an uneven pattern of the light emitting device according to the third embodiment.
An
9A to 9D are views illustrating an embodiment of a method of manufacturing a light emitting device.
As shown in FIG. 9A, a light emitting structure including the first
The light emitting structure may be, for example, metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), plasma chemical vapor deposition (PECVD), or molecular beam growth method (PECVD). Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), or the like, and the like, but are not limited thereto.
The
The
The
The composition of the first
The first
In the case of the
In the case of the
As shown in FIG. 9B, after the
As shown in FIG. 9C, an
An
A second
The
The
As shown in FIG. 9D, the
For example, when the laser lift-off method focuses and irradiates excimer laser light having a predetermined wavelength toward the
Each of the light emitting structures may be etched by element.
Thereafter, the exposed surface of the first conductivity-type semiconductor layer is etched to form the
10 is a view showing an embodiment of a light emitting device package including a light emitting device according to the embodiment.
The light emitting
The
The
The
The
The
For example, the garnet-base phosphor is YAG (Y 3 Al 5 O 12 : Ce 3 +) or TAG: may be a (Tb 3 Al 5 O 12 Ce 3 +), wherein the silicate-based phosphor is (Sr, Ba, Mg, Ca) 2 SiO 4: Eu 2 + one can, the nitride-based fluorescent material is CaAlSiN 3 containing SiN: Eu 2 + one can, Si 6 wherein the oxy-nitride-based fluorescent material includes SiON - x Al x O x N 8 -x: Eu 2 + (0 <x <6) can be.
Light in the first wavelength region emitted from the
A plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, and the like, which are optical members, may be disposed on an optical path of the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a light unit. Another embodiment may be implemented as a display device, an indicator device, or a lighting system including the semiconductor light emitting device or the light emitting device package described in the above embodiments, and for example, the lighting system may include a lamp or a street lamp. .
Hereinafter, a head lamp and a backlight unit will be described as an embodiment of a lighting system in which the above-described light emitting device or light emitting device package is disposed.
FIG. 11 is a diagram illustrating an embodiment of a head lamp in which a light emitting device is disposed.
Referring to FIG. 11, after the light emitted from the
The
12 is a diagram illustrating an example of a display device in which a light emitting device package is disposed, according to an exemplary embodiment.
Referring to FIG. 12, the
The light emitting module includes the above-described light
The
Here, the
The
The
In the
In the present embodiment, the
The liquid crystal display panel (Liquid Crystal Display) may be disposed on the
The
The liquid crystal display panel used in the display device uses a transistor as an active matrix method as a switch for adjusting a voltage supplied to each pixel.
The front surface of the
As described above, although the embodiments have been described by the limited embodiments and the drawings, the present invention is not limited to the above embodiments, and those skilled in the art to which the present invention pertains various modifications and variations from such descriptions. This is possible.
Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined not only by the claims below but also by the equivalents of the claims.
10: light emitting device 100: second conductive semiconductor layer
200: active layer 300: first conductive semiconductor layer
310, 310 ': first conductive semiconductor material layer
400: pattern forming layer
410: first pair structure 411: first nitride layer
413: second nitride layer 415: third nitride layer
420: second pair structure 450: uneven pattern
450a: recessed
510: first electrode 520: electron blocking layer
530: transparent electrode layer 540: reflective layer
550: passivation layer 560: bonding layer
570: support substrate 580: undoped semiconductor layer
590: growth substrate 600: light emitting device package
610:
630: wire 640: molding part
650: phosphor 710: light emitting module
720: Reflector 730: Shade
740: lens 800: display device
810: bottom cover 820: reflector
830 and 835: Light emitting module 840: Light guide plate
850: first prism sheet 860: second prism sheet
870: panel 880: color filter
Claims (20)
A second conductivity type semiconductor layer; And
An active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;
The first conductivity type semiconductor layer includes a pattern formation layer containing Al, and the pattern formation layer is disposed between the first conductivity type semiconductor material layer of the first conductivity type semiconductor layer, and the uneven pattern is the first conductivity. At least a portion of the type semiconductor material layer and the pattern forming layer are selectively etched and formed
The pattern forming layer includes at least two first pair structures of a first nitride layer and a second nitride layer containing Al, and the second nitride layer has an Al content that increases toward the active layer,
Each of the plurality of second nitride layers includes a composition of Al x Ga 1-x N (0 <x <1), the Al content x satisfies 0.01 ≦ x ≦ 0.25, and the value of x increases toward the active layer. .
A second conductivity type semiconductor layer; And
An active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;
The first conductivity type semiconductor layer includes a pattern forming layer containing Al,
The pattern forming layer is disposed between the first conductive semiconductor material layer of the first conductive semiconductor layer, and the uneven pattern is formed by selectively etching at least a portion of the first conductive semiconductor material layer and the pattern forming layer. ,
The pattern forming layer includes a second pair structure in which a third nitride layer, a first nitride layer and a second nitride layer containing Al are sequentially stacked in the direction of the active layer,
The second pair structure has a plurality of spaced apart from each other in the pattern forming layer, the second nitride layer is increased in the Al content toward the active layer direction,
Each of the plurality of second nitride layers includes a composition of Al x Ga 1-x N (0 <x <1), the Al content x satisfies 0.01 ≦ x ≦ 0.25, and the value of x increases toward the active layer. .
The third nitride layer and the first nitride layer each comprise a composition of InyGa1-y N (0 <y <1), GaN, AlxGa1-x N (0 <x <1),
In content y of the third nitride layer satisfies 0.01 ≦ y ≦ 0.05,
The third nitride layer is thinner than the first nitride layer or the second nitride layer.
The first nitride layer is doped with a first conductivity type dopant,
The difference between the Al content x of the second nitride layer and the Al content x of the adjacent second nitride layer is 0.03 to 0.05,
The first nitride layer and the second nitride layer have a thickness of 5nm to 10nm, respectively.
The first nitride layer and the second nitride layer each comprise a composition of GaN, Al x Ga 1-x N (0 <x <1),
The first nitride layer is the same as the second nitride layer, or thicker than the second nitride layer.
The thickness of the pattern forming layer is 100nm to 500nm,
The concave-convex pattern includes a concave portion and a convex portion, and the bottom surface of the convex portion is located in the second nitride layer closest to the active layer.
An electron blocking layer between the active layer and the second conductivity type semiconductor layer, and
A passivation layer surrounding side surfaces of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer,
A first electrode is positioned on at least a portion of the first conductivity type semiconductor layer,
A conductive support substrate is located on the second conductive semiconductor layer,
At least one of a transparent electrode layer and a reflective layer is disposed between the second conductive semiconductor layer and the conductive support substrate.
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KR102357825B1 (en) * | 2015-07-28 | 2022-02-04 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | Light Emitting Device and Method for the same |
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