KR20140135556A - Phosphor and light emitting device package including the same - Google Patents

Abstract

An embodiment of the present invention provides a nitride based phosphor which comprises: a first phosphor emitting light of a yellow wavelength region; a second phosphor emitting light of a green wavelength region; and a third phosphor emitting light of a red wavelength region, wherein a band width of light emitted by the first phosphor through the third phosphor by being excited by a blue wavelength region is 119 nm or more.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a phosphor and a light emitting device package including the phosphor.

An embodiment relates to a phosphor and a light emitting device package including the same.

BACKGROUND ART Light emitting devices such as a light emitting diode (LED) or a laser diode (LD) using a semiconductor material of Group 3-5 or 2-6 group semiconductors have been developed with thin film growth technology and device materials, It can realize various colors such as green, blue, white and ultraviolet rays. By using fluorescent materials or combining colors, it is possible to realize a white light beam having high efficiency. It is possible to realize low energy consumption and semi-permanent lifetime compared to conventional light sources such as fluorescent lamps and incandescent lamps , Fast response speed, safety, and environmental friendliness.

Therefore, the light emitting diode can be replaced with a transmission module of an optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, White LED lightings, automotive headlights and traffic lights.

The light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer formed on a substrate made of sapphire or the like. The first conductivity type semiconductor layer and the second conductivity type semiconductor layer One electrode and the second electrode are disposed.

In the light emitting device, electrons injected through the first conductive type semiconductor layer and holes injected through the second conductive type semiconductor layer meet with each other to emit light having energy determined by the energy band inherent in the material of the active layer. The light emitted from the active layer may be different depending on the composition of the material forming the active layer, and may be blue light, ultraviolet (UV) light or deep ultraviolet (UV) light.

A cerium-doped Ce-deoped YAG phosphor is disposed in the light emitting device package, and the phosphor is excited by the blue light emitted from the light emitting device to generate yellow light. Then, the yellow light can be combined with the blue light to form white light.

There has been an attempt to use a silicate phosphor (yellow silicate phosphor) or a nitride phosphor instead of the yttrium aluminum garnet phosphor described above.

However, the silicate phosphor has a problem of thermal stability. If the light emitting device package is used for a long time, the silicate phosphor tends to deteriorate due to heat emitted from the light emitting diode, and the luminance tends to decrease gradually. In addition, the nitride phosphors have a lower luminous intensity than YAG phosphors and silicate phosphors.

The deterioration of the phosphor and the decrease of the luminance may result in a decrease in the luminance of the backlight unit or the like in which the light emitting device package is used and a discrepancy in color tone.

The embodiment is intended to provide a phosphor which is excellent in color reproducibility and less in luminance drop due to heat.

An embodiment includes a first phosphor emitting light in a yellow wavelength range; A second phosphor emitting light in a green wavelength region; And a third phosphor that emits light in a red wavelength range, wherein the first phosphor, the second phosphor, and the third phosphor include nitrogen and are excited by the light in the blue wavelength range to form the first to third The half-width of the light emitted by the phosphor is 119 nm or more.

The weight ratio of the first phosphor may be 27% to 57%, the weight ratio of the second phosphor may be 40% to 70%, and the weight ratio of the third phosphor may be 2% to 5%.

The first phosphor may include La ₃ Si ₆ N ₁₁ : Ce.

The second phosphor may include (Ba, Sr) Si ₂ (O, Cl) ₂ N ₂ : Eu.

The third phosphor (SrCa) AlSiN _3: may include Eu.

The light emitted from the first phosphor, the second phosphor and the third phosphor forms white light, and the chromaticity coordinates of the green light forming the white light may be CIEx: 0.302 to 0.322 and CIEy: 0.583 to 0.603.

Light emitted from the first phosphor, the second phosphor and the third phosphor forms white light, and the chromaticity coordinates of the red light forming the white light are CIEx: 0.633 to 0.653, and CIEy: 0.324 to 0.344.

Light emitted from the first phosphor, the second phosphor and the third phosphor forms white light, and the chromaticity coordinates of the blue light forming the white light are CIEx: 0.143-0.163 and CIEy: 0.039-0.059.

Another embodiment includes a first electrode and a second electrode electrically separated from each other; At least one light emitting element electrically connected to the first electrode and the second electrode, respectively, for emitting light in a first wavelength range; A first phosphor emitting light in a second wavelength range and emitting light in a yellow wavelength range, a second phosphor emitting light in a green wavelength range, and a second phosphor emitting light in a second wavelength range, And a third phosphor that emits light in a red wavelength range. The half width of the light emitted from the nitride-based phosphor is excited by the first wavelength range emitted from the light emitting device to be 119 And a light emitting device package having a thickness of 10 nm or more.

The light emitting device package described above can realize white light from a light emitting device that emits light in a blue region using a nitride-based yellow, green, and red phosphors, and has high thermal stability have. Further, the half-width of the light emitted from the phosphor is 119 nm or more and emits light in the entire region of the visible light, so that the color is excellent.

1A and 1B are views showing one embodiment of a light emitting device,
2 is a view showing a first embodiment of a light emitting device package in which a light emitting device is disposed,
3A and 3B are diagrams illustrating an emission spectrum of a conventional light emitting device package and an emission spectrum of a light emitting device package according to the embodiment of FIG. 2,
Fig. 4 is a diagram comparing the CIE color coordinate system with the NTSC coordinate system and the sRGB color coordinate system.
5 is a view showing a second embodiment of the light emitting device package in which the light emitting device is disposed,
6 is a view showing a third embodiment of the light emitting device package in which the light emitting device is disposed,
7 is a view showing a fourth embodiment of the light emitting device package in which the light emitting element is arranged,
8 is a view showing a fifth embodiment of the light emitting device package in which the light emitting element is arranged,
9 is a view showing an embodiment of a video display device in which light emitting devices are arranged,
10 is a view showing an embodiment of a lighting apparatus in which a light emitting element is disposed.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

In the description of the embodiment according to the present invention, in the case of being described as being formed "on or under" of each element, the upper (upper) or lower (lower) or under are all such that two elements are in direct contact with each other or one or more other elements are indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

1A is a view showing an embodiment of a light emitting device.

The light emitting structure 120 includes a first conductive semiconductor layer 122, an active layer 124, and a second conductive semiconductor layer 126.

The first conductive semiconductor layer 122 may be formed of a compound semiconductor such as a Group III-V or a Group II-VI, and may be doped with a first conductive dopant. The first conductive semiconductor layer 122 may be a semiconductor material having a composition formula of Al _x In _y Ga _(1-xy) N (0? X? 1, 0? _Y? 1, 0? _X + y? , GaN, InAlGaN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP.

When the first conductive semiconductor layer 122 is an n-type semiconductor layer, the first conductive dopant may include n-type dopants such as Si, Ge, Sn, Se, and Te. The first conductive semiconductor layer 122 may be formed as a single layer or a multilayer, but is not limited thereto.

The active layer 124 is disposed between the first conductivity type semiconductor layer 122 and the second conductivity type semiconductor layer 126 and includes a single well structure, a multiple well structure, a single quantum well structure, A multi quantum well (MQW) structure, a quantum dot structure, or a quantum wire structure.

InGaN / InGaN, InGaN / InGaN, AlGaN / GaN, InAlGaN / GaN, GaAs (InGaAs), and AlGaN / AlGaN / InGaN / / AlGaAs, GaP (InGaP) / AlGaP, but is not limited thereto. The well layer may be formed of a material having an energy band gap smaller than the energy band gap of the barrier layer.

The second conductive semiconductor layer 126 may be formed of a semiconductor compound. The second conductive semiconductor layer 126 may be formed of a compound semiconductor such as a Group III-V or a Group II-VI, and may be doped with a second conductive dopant. The second conductivity type semiconductor layer 126 may be a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + For example, the second conductive semiconductor layer 126 may be formed of Al _x Ga _(1-x) N, and may be formed of any one of AlGaN, GaN AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. have.

When the second conductive semiconductor layer 126 is a p-type semiconductor layer, the second conductive dopant may be a p-type dopant such as Mg, Zn, Ca, Sr, or Ba. The second conductive semiconductor layer 126 may be formed as a single layer or a multilayer, but the present invention is not limited thereto.

The surface of the first conductivity type semiconductor layer 122 is patterned to improve light extraction efficiency and the first electrode 180 is disposed on the surface of the first conductivity type semiconductor layer 122. However, The surface of the first conductivity type semiconductor layer 122 where the one electrode 180 is disposed may not form a pattern. The first electrode 180 may be formed as a single layer or a multilayer structure including at least one of aluminum (Al), titanium (Ti), chrome (Cr), nickel (Ni), copper (Cu) have.

A passivation layer 190 may be formed around the light emitting structure 120. The passivation layer 190 may be made of an insulating material and the insulating material may be made of a non-conductive oxide or nitride. As an example, the passivation layer 190 may comprise a silicon oxide (SiO ₂ ) layer, an oxynitride layer, and an aluminum oxide layer.

The ohmic layer 140 and the reflective layer 150 may serve as a second electrode. The second electrode is disposed under the light emitting structure 120. GaN may be disposed under the second conductive type semiconductor layer 126 to smoothly supply current or holes to the second conductive type semiconductor layer 126.

The ohmic layer 140 may be about 200 Angstroms thick. The ohmic layer 140 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide ), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO nitride), AGZO (Al- Ga ZnO), IGZO , NiO, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Au, and Hf, and is not limited to such a material.

The reflective layer 150 may be formed of a material selected from the group consisting of molybdenum (Mo), aluminum (Al), silver (Ag), nickel (Ni), platinum (Pt), rhodium Metal layer. Aluminum, silver, and the like can effectively reflect the light generated in the active layer 124 to greatly improve the light extraction efficiency of the semiconductor device, and molybdenum can be advantageous for plating growth of protrusions described later.

The support substrate 170 may be formed of a conductive material such as a metal or a semiconductor material. A metal having excellent electrical conductivity or thermal conductivity can be used and a material having a high thermal conductivity (e.g., metal) can be formed so that heat generated during operation of the semiconductor device can be sufficiently diffused. For example, a material selected from the group consisting of molybdenum (Mo), silicon (Si), tungsten (W), copper (Cu) and aluminum (Al) (Cu-W), a carrier wafer (e.g., GaN, Si, Ge, GaAs, ZnO, SiGe, SiC, SiGe, Ga ₂ O _3, etc.) And the like.

The support substrate 170 may have a thickness ranging from 50 to 200 nm so as to have a mechanical strength sufficient to separate the nitride semiconductor into separate chips through a scribing process and a breaking process, Micrometer < / RTI > thickness.

The bonding layer 160 joins the reflective layer 150 and the support substrate 170 and is formed of a metal such as Au, Sn, In, Al, Si, Ag, Nickel (Ni), and copper (Cu), or an alloy thereof.

1B is a view showing another embodiment of the light emitting device.

In the light emitting device 200 according to the present embodiment, the buffer layer 215 and the light emitting structure 220 are disposed on the substrate 210.

The substrate 210 may be formed of a material suitable for semiconductor material growth or a carrier wafer, may be formed of a material having excellent thermal conductivity, and may include a conductive substrate or an insulating substrate. For example, at least one of sapphire (Al ₂ O ₃ ), SiO ₂ , SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge and Ga ₂ O ₃ can be used.

When the substrate 210 is formed of sapphire or the like and the light emitting structure 220 including GaN or AlGaN is disposed on the substrate 210, the lattice mismatch between GaN and AlGaN and sapphire is very large Since the difference in thermal expansion coefficient between them is also very large, dislocations, melt-backs, cracks, pits, and surface morphology defects that deteriorate the crystallinity may occur The buffer layer 215 can be formed of AlN or the like.

Although not shown, an undoped GaN layer or an AlGaN layer may be disposed between the buffer layer 215 and the light emitting structure 220 to prevent the potentials and the like from being transmitted into the light emitting structure 220.

The light emitting structure 220 includes a first conductive semiconductor layer 222, an active layer 224, and a second conductive semiconductor layer 226. The specific structure and composition of the light emitting structure 220 are the same as those of the embodiment shown in FIG. 1A Do.

When the light emitting structure 220 is made of GaN or the like and emits visible light in the blue region, the transparent conductive layer 230 is disposed on the light emitting structure 220 to form the second conductivity type semiconductor layer 226 so that current can be supplied evenly over a wide area.

In order to supply current to the first conductivity type semiconductor layer 222 when the substrate 210 is an insulating substrate, the first conductive type semiconductor layer 222 is mesa-etched from the transparent conductive layer 230 to a part of the first conductivity type semiconductor layer 222, Type semiconductor layer 222 may be exposed.

The first electrode 280 may be disposed on the exposed first conductive semiconductor layer 222 and the second electrode 285 may be disposed on the transparent conductive layer 230.

2 is a view showing a first embodiment of a light emitting device package including a light emitting element.

The light emitting device package 300 according to the embodiment includes a body 310 having a cavity formed therein, a first lead frame 321 and a second lead frame 322 provided on the body 310, A light emitting device 100 according to the above embodiments electrically connected to the first lead frame 321 and the second lead frame 322 and a molding part 340 formed in the cavity.

The body 310 may be formed of a silicon material, a synthetic resin material, or a metal material. When the body 310 is made of a conductive material such as a metal material, an insulating layer is coated on the surface of the body 310 to prevent an electrical short between the first and second lead frames 321 and 322 .

The first lead frame 321 and the second lead frame 322 are electrically separated from each other and supply current to the light emitting device 100. The first lead frame 321 and the second lead frame 322 may increase the light efficiency by reflecting the light generated from the light emitting device 100. The heat generated from the light emitting device 100 To the outside.

The light emitting device 100 may be mounted on the body 310 or may be mounted on the first lead frame 321 or the second lead frame 322. In addition to the vertical light emitting device shown in FIG. And a horizontal light emitting device shown in FIG.

The first lead frame 321 and the light emitting element 100 are directly energized and the second lead frame 322 and the light emitting element 100 are connected to each other through the wire 330 in this embodiment. The light emitting device 100 may be connected to the lead frames 321 and 322 by a flip chip method or a die bonding method in addition to the wire bonding method.

The molding part 340 may surround and protect the light emitting device 100. The phosphor 350 may be included on the molding part 340 to change the wavelength of light emitted from the light emitting device 100.

The light of the first wavelength range emitted from the light emitting device 100 is excited by the phosphor 350 to be converted into the light of the second wavelength range and the light of the second wavelength range passes through the lens (not shown) The light path can be changed.

The phosphor 350 may include a first phosphor that emits light in a yellow wavelength region, a second phosphor that emits light in a green wavelength region, and a third phosphor that emits light in a red wavelength region. More specifically, the first phosphor, the second phosphor and the third phosphor may be nitride-based compounds, and the first phosphor may include La ₃ Si ₆ N ₁₁ : Ce, and the second phosphor may include ( Ba, Sr) Si ₂ (O, Cl) ₂ N ₂ : Eu, and the third phosphor may include (SrCa) AlSiN ₃ : Eu.

When excited by light in the blue wavelength region, the light emitted from the first phosphor has a peak wavelength at 558 nanometers, a full width at half maximum is 87 nanometers, and the light emitted from the second phosphor is 535 It has a peak wavelength in the nanometer and a half-width of 107 nanometers. The light emitted from the third phosphor can have a peak wavelength at 625 nanometers and a half-width of 81 nanometers.

When the horizontal axis is the length of the wavelength and the vertical axis is the intensity of the emitted light, the half width is the half of the wavelength peak (50%) in the wavelength region, This refers to the length of two points.

3A and 3B are diagrams illustrating an emission spectrum of a conventional light emitting device package and an emission spectrum of a light emitting device package according to the embodiment of FIG.

3A and 3B, the spectrum of the blue light emitted from the light emitting device shows a peak in a region near 450 nm, and the emitted light shows a peak in the longer wavelength region than the blue light. The light emitting device package shown in FIG. 3A uses a silicate phosphor, and the half width (W ₁ ) of light emitted from the phosphor is about 96 nm.

The light emitting device package shown in FIG. 3B includes the three phosphors described above. The half width (W ₂ ) of the spectrum in which the light emitted from the first to third phosphors is mixed is 119 nm or more and 130 nm (W ₁ ) of light emitted from a single silicate-based phosphor shown in FIG. 3A is larger than the half width of light emitted from each of the first to third phosphors, The half width (W ₂ ) of the light emitted from the phosphor shown in FIG. 3B is wide.

Table 1 below shows the chromaticity coordinates of the conventional yttron aluminum garnet fluorescent material and the silicate fluorescent material.

YAG Silicate content(%) 34 NTSC (%) 68.97 64.92 sRGB (%) 94.05 88.80 Rx 0.646 0.641 Ry 0.333 0.338 Gx 0.314 0.331 Gy 0.584 0.572 Bx 0.152 0.151 By 0.049 0.046 Brightness (cd) 2.98 2.96

The silicate fluorescent material of Table 1 is excited by a light emitting element emitting light in a wavelength region of 153 nanometers, and the YAG fluorescent material is excited by a light emitting element emitting light in a wavelength region of 149 nanometers. The YAG phosphor of Table 1 has a peak wavelength at 548 nanometers and a half width of 123 nanometers, and the silicate phosphor has a peak wavelength at 561 nanometers and a wavelength of 96 nanometers.

In this embodiment, it is possible to display the chromaticity coordinate most similar to that of the conventional YAG phosphor by mixing the nitride phosphor of the nitride system with the green phosphor and the red phosphor.

That is, the volume ratio of the phosphor in a total volume of the cavity occupied by 11%, as a yellow phosphor La ₃ Si ₆ N _11: as a green phosphor _{Ce (Ba, Sr) Si 2} (O, Cl) 2 N 2: red to Eu (SrCa) AlSiN ₃ : Eu are mixed in a weight ratio of 27: 70: ₃ , respectively, and chromaticity coordinates similar to those of the YAG fluorescent material are exhibited.

FIG. 4 is a view comparing the CIE color coordinate system with the NTSC coordinate system and the sRGB color coordinate system,

The CIE 1931 color coordinate system represents the area ratio of a triangle composed of three RGB points relative to the area of a triangle formed by NTSC coordinates, and the higher the number, the more vivid the color is reproduced. sRGB is a standard proposed for the purpose of unifying the notation of colors of various display devices.

(0.64, 0.33), (0.30, 0.60) and (0.15, 0.06) in red, green and blue chromaticity coordinates in the sRGB color coordinate system are respectively (0.643, 0.334), (0.312, 0.593) and (0.153, 0.049), the color reproduction ratio is not less than that of (0.641, 0.338), (0.331, 0.572) and (0.152, 0.049) of the YAG fluorescent material.

In addition, in the sRGB color coordinate system, the allowable tolerance for the red, green and blue chromaticity coordinate system is ± 3/100. In this embodiment, the chromaticity coordinates of red, green and blue are all within the above- .

If the weight ratio of the yellow phosphor, the green phosphor and the red phosphor is out of the above range, the chromaticity coordinates of each light in the white light may be lowered.

Particularly, the above-mentioned phosphors can be filled in a volume of 10.5 to 11.5% of the volume of the cavity of the light emitting device package. If the volume of the phosphor is too small as compared with the volume of the cavity, The weight ratio of the second phosphor may be from 0.7 times to 2.5 times the weight ratio of the first phosphor, and the weight ratio of the second phosphor to the first phosphor may be 2.5 times, The sum of the weights of the first phosphor and the second phosphor may be 90% or more of the weight of the total phosphor, the weight of the third phosphor may be less than 10% of the weight of the total phosphor, May be the same as the weight of the whole phosphor.

The first phosphor, the second phosphor and the third phosphor can be mixed in a weight ratio of 27% to 57%, 40% to 70%, and 2% to 5% in the whole phosphors, 2 phosphor and the third phosphor may be mixed in a weight ratio of 27 to 70 to 3 or a weight ratio of 47 to 50 to 3, wherein the half-width of the light emitted from the phosphor is 119 nm or more.

If the first phosphor is too much, the spectrum of the light emitted from the light emitting device may deviate in the yellow direction. If the second phosphor is too much, the spectrum of the light emitted from the light emitting device may be biased toward the green direction. The spectrum of the light emitted from the light emitting device can be shifted in the red direction, and if each phosphor is included in an excessively small amount, other phosphors may be included in a larger amount, thereby changing the spectrum of light.

In this case, the chromaticity coordinates of the green light are CIEx: 0.302 to 0.322, the CIEy: 0.583 to 0.603, the chromaticity coordinates of the red light are CIEx: 0.633 to 0.653, the CIEy: 0.324 to 0.344, Is CIEx: 0.143 to 0.163, and CIEy: 0.039 to 0.059.

The light emitting device package described above can realize white light from a light emitting device that emits light in a blue region using a nitride-based yellow, green, and red phosphors, and can have high thermal stability without lowering the light intensity .

5 is a view showing a second embodiment of the light emitting device package in which the light emitting device is disposed.

The light emitting device package 400 according to the embodiment includes a substrate 410, a first lead frame 421 and a second lead frame 422 disposed on the substrate, and a second lead frame 422 disposed on the first lead frame 421 And a light emitting device 100 fixed through the conductive adhesive layer 440.

The substrate 410 may be made of a ceramic material having excellent thermal conductivity and may be, for example, square sapphire (Al ₂ O ₃ ), and the first lead frame 421 and the second lead frame 422 may be made of a conductive And may be formed by plating gold (Au), for example. The first lead frame 421 and the second lead frame 422 may reflect light emitted from the light emitting device 100.

The light emitting device 100 may include a light emitting diode or the like, and may be electrically connected to the second lead frame 422 through a wire 460. The wire 460 may be made of a conductive material and may be made of gold (Au) having a diameter of about 0.8 to 1.6 millimeters. If the wire 460 is too thin, it can be cut by an external force. If the wire 460 is too thick, the material cost is reduced and the light emitted from the light emitting device 100 can be an obstacle to the progress. In this embodiment, a vertical light emitting device is disposed, but a horizontal light emitting device or a flip chip type light emitting device may be disposed.

The phosphor layer 470 is disposed on the light emitting device 100 in a conformal coating manner to have a constant thickness and a molding part 480 is disposed to surround the light emitting device 100 and the like. The molding part 480 may be of a dome type and may be arranged in a different shape in order to adjust the light output angle of the light emitting device package 400.

The molding part 480 surrounds and protects the light emitting device 450 and can change the course of the light emitted from the light emitting device 100 to function as a lens and the phosphor layer 470 can function as a lens, And converts the light of the first wavelength range into the light of the second wavelength range.

Three pads 431, 432 and 435 are disposed on the rear surface of the substrate 410. The pads 431, 432 and 435 are formed of a material having a high thermal conductivity and are disposed under the substrate 410 to fix the light emitting device package 400 to the housing It can act as a path for releasing heat.

The first and second lead frames 421 and 422 and the three pads 431, 432 and 435 may serve as electrodes. The first lead frame 421 and the second lead frame 422 may be disposed on the top of the substrate 410 to serve as an upper electrode and the first pad 431 and the second pad 432 may function as an upper electrode, And can serve as a lower electrode, and the upper electrode and the lower electrode can be connected through the via holes 421a and 422a described later.

That is, the first lead frames 421 and 422 constitute the upper electrode, the first pad 431 and the second pad 432 constitute the lower electrode, the via holes 421a and 422a are filled with a conductive material The upper electrode, the lower electrode, and the penetrating electrode may be referred to as first and second electrode portions.

In the light emitting device package according to the present embodiment, the phosphor 470 may include a first phosphor that emits light in the yellow wavelength range, a second phosphor that emits light in the green wavelength range, and a second phosphor that emits light in the red wavelength range And a third phosphor emitting light. More specifically, the first phosphor, the second phosphor and the third phosphor may be nitride-based compounds, and the first phosphor may include La ₃ Si ₆ N ₁₁ : Ce, and the second phosphor may include ( Ba, Sr) Si ₂ (O, Cl) ₂ N ₂ : Eu, and the third phosphor may include (SrCa) AlSiN ₃ : Eu.

Therefore, the light emitting device package according to the present embodiment can realize white light from a light emitting device that emits light in a blue region using nitride-based yellow, green, and red phosphors, Stability can be obtained.

6 is a view showing a third embodiment of the light emitting device package in which the light emitting device is disposed.

The light emitting device package 500 according to the embodiment is a flip chip type light emitting device package including a body 510 including a cavity, a first lead frame 521 and a second lead frame 521 provided on the body 510, A light emitting device 200 according to the above-described embodiments electrically connected to the first lead frame 521 and the second lead frame 522 installed in the body 510, And a molding part 550 formed in the cavity.

The body 510 may be formed of a silicon material, a synthetic resin material, or a metal material. When the body 510 is made of a conductive material such as a metal material, an insulating layer is coated on the surface of the body 510 to prevent an electrical short between the first and second lead frames 521 and 522 .

The first lead frame 521 and the second lead frame 522 are electrically separated from each other and supply current to the light emitting device 200. The first lead frame 521 and the second lead frame 522 can reflect the light generated from the light emitting device 200 to increase the light efficiency and reduce the heat generated from the light emitting device 200 to the outside It may be discharged.

The light emitting device 200 may be electrically connected to the first lead frame 521 and the second lead frame 522 by ball solder 540.

The molding part 550 may surround and protect the light emitting device 200. The phosphor 560 is conformally coated on the molding part 550 in a separate layer from the molding part 550. The phosphor 560 is distributed so that the wavelength of the light emitted from the light emitting device 200 can be changed in the entire region in which the light of the light emitting device package 500 is emitted.

The light of the first wavelength range emitted from the light emitting device 200 is excited by the phosphor 560 to be converted into the light of the second wavelength range and the light of the second wavelength range passes through the lens (not shown) The light path can be changed.

The light emitting device package 500 described above can realize white light from a light emitting device that emits light in a blue region by using a nitride-based yellow, green, and red phosphors, and can achieve high thermal stability Lt; / RTI >

7 is a view showing a fourth embodiment of the light emitting device package in which the light emitting element is disposed. In this embodiment, a COB (Chip on Board) type light emitting device package is shown.

The light emitting device package 600 according to the present embodiment includes a base metal 610, an insulating layer 615, first and second lead frames 621 and 622, and a dam 645. The light emitting device 200 is fixed on the base metal 610 through the solder 640 and the light emitting device 200 can be electrically connected to the first and second lead frames 621 and 622 through the wire 630 have.

The first and second lead frames 621 and 622 are insulated from the base metal 610 through the insulating layer 615 and the molding portion 680 surrounding the light emitting device 200 may include a phosphor. The dam 645 can fix the edge of the molding part 680 on the first and second lead frames 621 and 622. The phosphor may be contained in the molding portion 680 or may be disposed on the light emitting element 200 in a conformal coating manner.

The light emitting device package 500 described above can realize white light from a light emitting device that emits light in a blue region by using a nitride-based yellow, green, and red phosphors, and can achieve high thermal stability Lt; / RTI >

8 is a view showing a fifth embodiment of a light emitting device package in which a light emitting element is arranged. In the light emitting device package according to the present embodiment, the light emitting devices are shown in two reflection cups.

The light emitting device package 100 includes a body 710, a first reflective cup 722, a second reflective cup 724, a connection portion 726, light emitting devices 200a and 200b, a zener diode 750, And wires 751-759.

Body 710 is polyphthalamide: at least one of (PPA Polyphthalamide) resin material, silicon (Si), metallic material, PSG, such as a (photo sensitive glass), sapphire (Al ₂ O _3), a printed circuit board (PCB) . Preferably, the body 710 may be made of a resin material such as polyphthalamide (PPA).

The body 710 may be formed of a conductor having conductivity. When the body 710 is made of an electrically conductive material, an insulating film (not shown) is formed on the surface of the body 710 so that the body 710 can surround the first reflective cup 722, the second reflective cup 724, And to prevent electrical shorting with the contact portion 726.

The shape of the upper surface 706 of the body 710 viewed from above may have various shapes such as a triangular shape, a rectangular shape, a polygonal shape, and a circular shape depending on the use and design of the light emitting device package 700.

The light emitting device package 700 according to the present embodiment can be used in an edge type backlight unit (BLU), and when applied to a portable flashlight or a domestic light, the body 710 can be used as a portable flashlight, It can be changed into a size and shape that are easy to embed in the illumination.

The body 710 is open at the top and has a cavity 705 (hereafter referred to as "body cavity") consisting of a side 702 and a bottom 703.

The body cavity 705 may be formed in a cup shape, a concave container shape, or the like, and a side surface 702 of the body cavity 705 may be perpendicular or inclined to the bottom surface 703.

The shape of the body cavity 705 viewed from the top may be circular, elliptical, polygonal (e.g., rectangular). The edge of the body cavity 705 may be curved. The top view of the illustrated body cavity 705 may be generally octagonal in shape and the side 702 of the body cavity 705 may be divided into eight sides, May be smaller than the area of the first layer. Where the first faces are the sides of the body cavity 705 facing each corner of the body 710 and the second face may be the face between the first faces.

The first reflective cup 722 and the second reflective cup 724 may be spaced apart from each other within the body 710 below the bottom 703 of the body cavity 705. The first reflective cup 722 may be structured such that the upper portion thereof is recessed from the bottom surface of the body cavity 705.

For example, the bottom 703 of the body cavity 705 may have a first cavity 762 having an open top and a side and bottom, and the first reflective cup 722 may be disposed within the first cavity 762 .

The second reflective cup 724 may be a structure that is spaced apart from the first cavity 762 and is open at an upper portion that is recessed from the bottom surface of the body cavity 705. For example, the bottom 703 of the body cavity 705 may have a second cavity 764 having an open top and side and bottom, and a second reflective cup 724 may be disposed within the second cavity 764 . The second cavity 764 may be spaced apart from the first cavity 762.

A part of the bottom 703 of the body cavity 705 is positioned between the first reflective cup 722 and the second reflective cup 724 and the first reflective cup 722 and the second reflective cup 722 2 reflective cup 724 can be spaced apart and isolated.

The shapes of the first cavity 762 and the second cavity 764 viewed from above may be formed in a cup shape, a concave container shape or the like, and each side may be perpendicular or inclined to the respective bottom.

At least a portion of each of the first reflective cup 722 and the second reflective cup 724 may be exposed through the body 710 to the outside of the body 710. Since at least a part of the first reflective cup 722 and the second reflective cup 724 are exposed to the outside of the body 710, heat generated from the first and second light emitting devices 200a and 200b can be transmitted to the body 710) can be improved.

For example, one end 742 of the first reflective cup 722 may be exposed through the first side of the body 710. Also, one end 744 of the second reflective cup 724 may be exposed through the second side of the body 710. Wherein the second side may be a side facing the first side.

The first reflective cup 722 and the second reflective cup 724 may be made of a metal material such as silver, gold, or copper, or may be formed of a plated metal material. The first reflective cup 722 and the second reflective cup 724 are made of the same material as the body 710 and may be integrated with the body 710. Or the first reflective cup 722 and the second reflective cup 724 may be different materials from the body 710 and may not be integral with the body 710. [ The first reflective cup 722 and the second reflective cup 724 may be symmetrical in shape and size with respect to the connecting portion 726. The connection portion 726 is formed in the body 710 under the bottom of the body cavity 705 so as to be spaced apart from the first reflective cup 722 and the second reflective cup 724, respectively. The connection portion 726 may be made of a conductive material that can conduct electricity.

As shown, the connection portion 726 may be disposed between the first reflective cup 722 and the second reflective cup 724. [ The connection portion 726 may be disposed inside the bottom of the body cavity 705 adjacent to the third side of the body cavity 705 between the first reflective cup 722 and the second reflective cup 724. [

At least a portion of the connection 726 may be exposed through the body 710. For example, one end of the connection portion 726 may be exposed through the third side of the body cavity 705. [ Wherein the third side of the body 710 is either side that is perpendicular to the first side and the second side of the body 710.

The Zener diode 750 is disposed on one of the first reflective cup 722 and the second reflective cup 724 for improving the withstand voltage of the light emitting device package 700. [ A zener diode 750 may be mounted on the upper surface 722-1 of the second reflective cup 724. [

When the first light emitting device 200a and the second light emitting device 200b emit light in the same wavelength range, the first reflective cup 722 and the second reflective cup 724 may be filled with phosphors, respectively. The first reflective cup 722 and the second reflective cup 724 may be filled with phosphors of the same composition and the phosphors may be disposed on the respective light emitting devices 200a and 200b by a conformal coating method.

The light emitting device package 500 described above can realize white light from a light emitting device that emits light in a blue region by using a nitride-based yellow, green, and red phosphors, and can achieve high thermal stability Lt; / RTI >

A plurality of light emitting device packages according to embodiments may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, and the like may be disposed on the light path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member can function as a light unit. Still another embodiment may be implemented as a display device, an indicating device, a lighting system including the semiconductor light emitting device or the light emitting device package described in the above embodiments, for example, the lighting system may include a lamp, a streetlight .

Hereinafter, a backlight unit and a lighting device will be described as an embodiment of the lighting system in which the light emitting device or the light emitting device package is disposed.

9 is a view showing an embodiment of an image display device including a light emitting device package.

As shown in the figure, the image display device 900 according to the present embodiment includes a light source module, a reflection plate 920 on the bottom cover 910, a reflection plate 920 disposed in front of the reflection plate 920, A first prism sheet 950 and a second prism sheet 960 disposed in front of the light guide plate 940 and a second prism sheet 960 disposed between the first prism sheet 960 and the second prism sheet 960, A panel 970 disposed in front of the panel 970 and a color filter 980 disposed in the front of the panel 970.

The light source module comprises a light emitting device package 935 on a circuit board 930. Here, the circuit board 930 may be a PCB or the like, and the light emitting device package 935 is as described above.

The image display apparatus may be an edge-type backlight unit shown in Fig. 9, or a direct-type backlight unit.

The light emitting device package used in the image display device described above can realize white light from a light emitting device that emits light in a blue region by using a nitride-based yellow, green, and red phosphors, It can have high thermal stability.

10 is a view showing an embodiment of a lighting apparatus including a light emitting device package.

The lighting apparatus according to the present embodiment may include a cover 1100, a light source module 1200, a heat discharger 1400, a power supply unit 1600, an inner case 1700, and a socket 1800. In addition, the illumination device according to the embodiment may further include at least one of the member 1300 and the holder 1500, and the light source module 1200 may include the light emitting device package according to the above-described embodiments .

The cover 1100 may have a shape of a bulb or a hemisphere and may be provided in a shape in which the hollow is hollow and a part is opened. The cover 1100 may be optically coupled to the light source module 1200. For example, the cover 1100 can diffuse, scatter, or excite light provided from the light source module 1200. The cover 1100 may be a kind of optical member. The cover 1100 may be coupled to the heat discharging body 1400. The cover 1100 may have an engaging portion that engages with the heat discharging body 1400.

The inner surface of the cover 1100 may be coated with a milky white paint. Milky white paints may contain a diffusing agent to diffuse light. The surface roughness of the inner surface of the cover 1100 may be formed larger than the surface roughness of the outer surface of the cover 1100. This is for sufficiently diffusing and diffusing light from the light source module 1200 and emitting it to the outside.

The cover 1100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 1100 may be transparent so that the light source module 1200 is visible from the outside, and may be opaque. The cover 1100 may be formed by blow molding.

The light source module 1200 may be disposed on one side of the heat discharger 1400. Accordingly, the heat from the light source module 1200 is conducted to the heat discharging body 1400. The light source module 1200 may include a light emitting device package 1210, a connection plate 1230, and a connector 1250.

The member 1300 is disposed on the upper surface of the heat discharging body 1400 and has guide grooves 1310 into which the plurality of light emitting device packages 1210 and the connector 1250 are inserted. The guide groove 1310 corresponds to the substrate of the light emitting device package 1210 and the connector 1250.

The surface of the member 1300 may be coated or coated with a light reflecting material. For example, the surface of the member 1300 may be coated or coated with a white paint. The member 1300 reflects the light reflected by the inner surface of the cover 1100 and returns toward the light source module 1200 toward the cover 1100. Therefore, the light efficiency of the illumination device according to the embodiment can be improved.

The member 1300 may be made of an insulating material, for example. The connection plate 1230 of the light source module 1200 may include an electrically conductive material. Therefore, electrical contact can be made between the heat discharging body 1400 and the connecting plate 1230. The member 1300 may be made of an insulating material to prevent an electrical short between the connection plate 1230 and the heat discharger 1400. The heat discharger 1400 receives heat from the light source module 1200 and heat from the power supply unit 1600 to dissipate heat.

The holder 1500 closes the receiving groove 1719 of the insulating portion 1710 of the inner case 1700. Therefore, the power supply unit 1600 housed in the insulating portion 1710 of the inner case 1700 is sealed. The holder 1500 has a guide protrusion 1510. The guide protrusion 1510 has a hole through which the projection 1610 of the power supply unit 1600 passes.

The power supply unit 1600 processes or converts an electric signal provided from the outside and provides the electric signal to the light source module 1200. The power supply unit 1600 is housed in the receiving groove 1719 of the inner case 1700 and is sealed inside the inner case 1700 by the holder 1500. The power supply unit 1600 may include a protrusion 1610, a guide 1630, a base 1650, and an extension 1670.

The guide portion 1630 has a shape protruding outward from one side of the base 1650. The guide portion 1630 may be inserted into the holder 1500. A plurality of components may be disposed on one side of the base 1650. The plurality of components may include, for example, a DC converter for converting an AC power supplied from an external power source to a DC power source, a driving chip for controlling driving of the light source module 1200, an ESD (ElectroStatic discharge) protective device, and the like, but the present invention is not limited thereto.

The extension 1670 has a shape protruding outward from the other side of the base 1650. The extension portion 1670 is inserted into the connection portion 1750 of the inner case 1700 and receives an external electrical signal. For example, the extension portion 1670 may be provided to be equal to or smaller than the width of the connection portion 1750 of the inner case 1700. One end of each of the positive wire and the negative wire is electrically connected to the extension portion 1670 and the other end of the positive wire and the negative wire are electrically connected to the socket 1800 .

The inner case 1700 may include a molding part together with the power supply unit 1600 in the inner case 1700. The molding part is a hardened portion of the molding liquid so that the power supply providing part 1600 can be fixed inside the inner case 1700.

The light emitting device package used in the illumination device can realize white light from a light emitting device that emits light in a blue region by using a nitride-based yellow, green, and red phosphors, And the half-width of light emitted from the first to third phosphors is 119 nm or more.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100, 200: light emitting device 120, 220: light emitting structure
300, 400, 500, 600, 700: Light emitting device package
900: Video display device

Claims (13)

A first phosphor emitting light in a yellow wavelength range;
A second phosphor emitting light in a green wavelength region; And
And a third phosphor that emits light in a red wavelength range,
Wherein the first phosphor, the second phosphor and the third phosphor have a half-width of 119 nanometers or more, and the light emitted from the first phosphor to the third phosphor is excited by light in the blue wavelength region. The method according to claim 1,
Wherein the weight ratio of the first phosphor is 27% to 57%, the weight ratio of the second phosphor is 40% to 70%, and the weight ratio of the third phosphor is 2% to 5%. The method according to claim 1,
Wherein the first phosphor comprises La ₃ Si ₆ N ₁₁ : Ce. The method according to claim 1,
Wherein the second phosphor comprises (Ba, Sr) Si ₂ (O, Cl) ₂ N ₂ : Eu. The method according to claim 1,
The third phosphor (SrCa) AlSiN _3: phosphor containing Eu. The method according to claim 1,
Wherein the light emitted from the first phosphor, the second phosphor and the third phosphor forms white light, and the chromaticity coordinates of the green light forming the white light are CIEx: 0.302 to 0.322 and CIEy: 0.583 to 0.603. The method according to claim 1,
Wherein the light emitted from the first phosphor, the second phosphor and the third phosphor forms white light, and the chromaticity coordinates of the red light forming the white light are CIEx: 0.633 to 0.653 and CIEy: 0.324 to 0.344. The method according to claim 1,
Wherein the light emitted from the first phosphor, the second phosphor and the third phosphor forms white light, and the chromaticity coordinates of the blue light forming the white light are CIEx: 0.143-0.163 and CIEy: 0.039-0.059. A first electrode and a second electrode electrically separated from each other;
At least one light emitting element electrically connected to the first electrode and the second electrode, respectively, for emitting light in a first wavelength range; And
A first phosphor emitting light in a second wavelength region, a second phosphor emitting light in a green wavelength region, and a second phosphor emitting red light in a red wavelength region, And a third phosphor that emits light in a wavelength region,
Wherein a half width of the light emitted from the nitride-based fluorescent substance is 119 nm or more by the first wavelength region emitted from the light emitting device. 10. The method of claim 9,
Wherein the weight ratio of the first phosphor to the second phosphor is 27% to 57%, the weight ratio of the second phosphor is 40% to 70%, and the weight ratio of the third phosphor is 2% to 5%. 10. The method of claim 9,
Wherein the first phosphor comprises La ₃ Si ₆ N ₁₁ : Ce. 10. The method of claim 9,
Wherein the second phosphor comprises (Ba, Sr) Si ₂ (O, Cl) ₂ N ₂ : Eu. 10. The method of claim 9,
The third phosphor (SrCa) AlSiN _3: a light emitting device package including a Eu.

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