KR20140076880A - Light Emitting Devices package - Google Patents

Abstract

In order to reduce a variation in color temperature, a light emitting device package according to an embodiment of the present invention includes a substrate; A light emitting element mounted on a substrate; A molding agent formed on the substrate and the light emitting element; A diffusing agent contained in the molding agent; And the diffusing agent is SiO ₂ and the weight percentage is 0.4% or more and 1.4% or less, or the diffusing agent is Al ₂ O ₃ and the weight percentage is 1% or more and 3% or less.

Description

A light emitting device package

An embodiment relates to a light emitting device package.

LED (Light Emitting Diode) is a device that converts electrical signals into infrared, visible light or light using the characteristics of compound semiconductors. It is used in household appliances, remote controls, display boards, The use area of LED is becoming wider. LED has advantages of low power consumption, semi-permanent lifetime, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps.

In general, miniaturized LEDs are made of a surface mounting device for mounting directly on a PCB (Printed Circuit Board) substrate, and an LED lamp used as a display device is also being developed as a surface mounting device type . Such a surface mount device can replace a conventional simple lighting lamp, which is used for a lighting indicator for various colors, a character indicator, an image indicator, and the like.

LED semiconductors are grown by a process such as MOCVD or molecular beam epitaxy (MBE) on a substrate such as sapphire or silicon carbide (SiC) having a hexagonal system structure.

Embodiments provide a light emitting device package with improved color temperature variation.

The light emitting device package according to an embodiment of the present invention may include a substrate, a light emitting device mounted on the substrate, a molding material formed on the substrate and the light emitting device, and a diffusing material in the molding material, May be SiO ₂ or Al ₂ O ₃ , SiO ₂ may be 0.4 wt% or more and 1.4 wt% or less, and Al ₂ O ₃ may be 1 wt% or more and 3 wt% or less.

The light emitting device package according to the embodiment of the present invention may include a diffusion agent of SiO ₂ or Al ₂ O _{3 in} the molding agent to improve the color temperature deviation.

1 is a cross-sectional view illustrating a light emitting device package according to an embodiment.
2 is a graph showing a change in the color temperature (CCT) according to the viewing angle.
3A is a graph showing changes in color temperature according to the content of SiO _{2 in} the molding material.
FIG. 3B is a graph showing a decrease in luminous flux according to the content of SiO _{2 in} the molding material.
4A is a graph showing changes in color temperature according to the content of Al ₂ O _{3 in} the molding material.
FIG. 4B is a graph showing reduction in luminous flux according to the content of Al ₂ O _{3 in} the molding material.
5 is a cross-sectional view illustrating a light emitting device package according to an embodiment.
6A is a perspective view showing a light emitting device package including the light emitting device of the embodiment.
6B is a cross-sectional view illustrating a light emitting device package including the light emitting device of the embodiment.
7A is a perspective view illustrating a lighting device including a light emitting device package according to an embodiment,
FIG. 7B is a cross-sectional view illustrating a lighting device including the light emitting device package according to the embodiment,
8 is a conceptual diagram illustrating a backlight unit including a light emitting device package according to an embodiment,
9 is a conceptual diagram illustrating a backlight unit including a light emitting device package according to an embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

The terms spatially relative, "below", "beneath", "lower", "above", "upper" May be used to readily describe a device or a relationship of components to other devices or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the drawings, terms that include different orientations of the device during use or operation. For example, when inverting an element shown in the figures, an element described as "below" or "beneath" of another element may be placed "above" another element. Thus, the exemplary term "below" can include both downward and upward directions. The elements can also be oriented in different directions, so that spatially relative terms can be interpreted according to orientation.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. It is noted that the terms "comprises" and / or "comprising" used in the specification are intended to be inclusive in a manner similar to the components, steps, operations, and / Or additions.

Unless defined otherwise, all terms (including technical and scientific terms) used herein may be used in a sense commonly understood by one of ordinary skill in the art to which this invention belongs. Also, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size and area of each component do not entirely reflect actual size or area.

Further, the angle and direction mentioned in the description of the structure of the light emitting device in the embodiment are based on those shown in the drawings. In the description of the structure of the light emitting device in the specification, reference points and positional relationship with respect to angles are not explicitly referred to, refer to the related drawings.

Hereinafter, embodiments will be described in detail with reference to the drawings.

1 is a cross-sectional view illustrating a light emitting device package 100 according to an embodiment.

1, a light emitting device package 100 includes a substrate 10, a light emitting device 30 mounted on the substrate 10, and a molding material 30 formed on the substrate 10 and the light emitting device 30, (50) and a diffusion agent (70) in the molding material (50).

The substrate 10 may be a flat substrate made of one of a ceramic material, a synthetic resin material and a printed circuit board (PCB), and may include electrodes (not shown) formed on the substrate 10 .

The electrode (not shown) may be formed of a metal material. For example, an electrode (not shown) may be formed of a metal such as titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Al), indium (In), palladium (Pd), cobalt (Co), silicon (Si), germanium (Ge), hafnium (Hf), ruthenium (Ru) , Iron (Fe), or the like. Also, the electrode (not shown) may be formed to have a single layer or a multilayer structure, but is not limited thereto.

The light emitting device 30 is mounted on the substrate 10 and is electrically connected to an electrode (not shown) to receive light to generate light. The light emitting device 30 may be, for example, a colored light emitting device that emits light such as red, green, blue, or white, or a UV (Ultra violet) light emitting device that emits ultraviolet light.

The light emitting device 30 may include a light emitting structure (not shown) including a first semiconductor layer (not shown), an active layer (not shown), and a second semiconductor layer (not shown). An active layer (not shown) may be disposed between the first semiconductor layer (not shown) and the second semiconductor layer (not shown).

At least one of the first semiconductor layer (not shown) and the second semiconductor layer (not shown) may be implemented as a p-type semiconductor layer doped with a p-type dopant, and the other may be an n-type semiconductor layer Lt; / RTI > When the first semiconductor layer (not shown) is a p-type semiconductor layer, the second semiconductor layer (not shown) may be an n-type semiconductor layer and vice versa.

the p-type semiconductor layer is a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0 = x = 1, 0 = y = 1, 0 = x + y = 1) aluminum nitride, AlN, AlGaN, InGaN, indium nitride, InAlGaN, AlInN, and the like, and may be selected from the group consisting of Mg, Zn, Ca), strontium (Sr), barium (Ba), or the like can be doped.

The n-type semiconductor layer may be a semiconductor material having a composition formula of, for example, In _x Al _y Ga _{1 -x- y} N (0 = x = 1, 0 = y = 1, 0 = x + y = 1) (Al), aluminum nitride (AlN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), indium nitride (InN), InAlGaN, AlInN, and the like. An n-type dopant such as Ge, Sn, Se, or Te may be doped.

An active layer (not shown) may be interposed between the first semiconductor layer (not shown) and the second semiconductor layer (not shown). The active layer (not shown) may be formed of a single or multiple quantum well structure, a quantum-wire structure, a quantum dot structure, or the like using a compound semiconductor material of Group 3-V group elements.

In the case where the active layer (not shown) has a quantum well structure, for example, a composition formula of In _x Al _y Ga _{1 -x- y} N (0 = x = 1, 0 = y = 1, 0 = x + y = 1) well layer and the _{in a Al b Ga 1 -a- b} N (0 = a = 1, 0 = b = 1, 0 = a + b = 1) or a single quantum well structure having a barrier layer having a composition formula having Lt; / RTI > The well layer may be formed of a material having a band gap lower than the band gap of the barrier layer.

A conductive clad layer (not shown) may be formed on and / or below the active layer (not shown). The conductive clad layer (not shown) may be formed of an AlGaN-based semiconductor and may have a band gap larger than that of the active layer (not shown).

The light emitting device 30 may be electrically connected to an electrode (not shown) by a wire bonding method, a flip chip method, or a die bonding method.

The light emitting device 30 may be one of a horizontal type in which all the electric terminals are formed on the upper surface, a vertical type formed in the upper and lower surfaces, or a flip chip.

The horizontal type light emitting device 30 may have a structure in which a light emitting structure (not shown) is disposed on the substrate 10. The light emitting structure (not shown) may include a first semiconductor layer (not shown), an active layer (not shown), and a second semiconductor layer (not shown). A first semiconductor layer (not shown) may be disposed on the substrate 10, and a second semiconductor layer (not shown) may be disposed on the first semiconductor layer (not shown). An active layer (not shown) may be disposed between the first semiconductor layer (not shown) and the second semiconductor layer (not shown).

A second electrode layer (not shown) may be disposed on the second semiconductor layer (not shown). A part of the first semiconductor layer (not shown) is partially exposed, and a first electrode layer is formed on the exposed top surface of the first semiconductor layer (not shown) .

The horizontal light emitting device 30 may be electrically connected to an electrode (not shown) by a wire bonding method.

The flip chip type light emitting device 30 may have the same structure as the horizontal type light emitting device.

The molding agent 50 may be formed of silicon, epoxy, and other resin materials. When the center portion and the edge are compared with respect to the light emitted from the light emitting element 30 after forming only the molding agent 50, a yellow ring may be generated due to a difference in color temperature. The molding agent 50 may include a diffusing agent 70 therein. The molding agent 50 may be randomly incorporated therein with the diffusing agent 70 without regularity.

The diffusing agent 70 may be formed of SiO ₂ or Al ₂ O ₃ . The diffusing agent 70 may be included in the molding material 50 to reflect light emitted from the light emitting device 30 in various directions. Accordingly, the color temperature difference between the central portion and the edge of the light emitting device package 100 can be reduced.

FIG. 2 is a graph showing the change of the color temperature (CCT) according to the viewing angle, and Table 1 shows the maximum and minimum values of the color temperature.

[Table 1]

Referring to Table 1, Ref in the graph represents the result according to the prior art as reference, A represents Al ₂ O ₃ , and R represents SiO ₂ . In addition, 1%, 3%, and 5% represent weight percent of SiO ₂ and Al ₂ O ₃ , respectively. That is, A_1% means that means that the weight% of Al ₂ O ₃ is of 1%, and R_5% is weight% of 5% of SiO _2. ΔCCT represents the difference between the maximum and minimum values of the color temperature, and Avg, Max, and Min of the directional angle meter represent the average, maximum, and minimum of the color temperature values according to the viewing angle, respectively.

2 is a graph showing a change in the color temperature (CCT) value according to a viewing angle.

According to the graph and the table, it can be seen that the difference between the maximum value and the minimum value of the conventional (Ref) color temperature is very large. However, when SiO ₂ or Al ₂ O ₃ is contained in the molding material 50, ΔCCT, which is the difference between the maximum value and the minimum value of the color temperature, is greatly reduced. As can be seen from the table, it can be seen that the difference ΔCCT between the maximum value and the minimum value of the color temperature decreases as the weight percentage of the molding agent 50 increases.

[Table 2]

Table 2 is a table showing the changes of the ΔCCT and the luminous flux (Lm) together as the weight% of the diffusing agent 70 increases. Referring to Table 2, it can be seen that the ΔCCT decreases as the weight percentage of the diffusing agent 70 increases, but the luminous flux Lm decreases accordingly. Therefore, if the light flux is greatly decreased while decreasing the ΔCCT, the characteristics of the light emitting device are degraded. Therefore, even if the diffuser 70 is included, the light flux (Lm) reduction of about 5% 70) can be limited.

FIG. 3A is a graph showing the amount of change in color temperature according to the content of SiO _{2 in} the molding agent 50, and FIG. 3B is a graph showing a decrease in the luminous flux according to the content of SiO _{2 in} the molding agent 50.

Table 1, Table 2, Fig. 3a and 3b 1%, the content of the% by weight of SiO _2, 3%, 5%, one time, but measurement of the ΔCCT and the light beam (Lm) is the content of the% by weight of SiO ₂ 0 %, And it is measured to 1.4%. Referring to FIG. 3A, it can be seen that? CCT decreases linearly as the weight% of SiO ₂ increases. However, referring to FIG. 3B, the rate at which the luminous flux falls is represented by the weight percentage of SiO ₂ , and the luminous flux also decreases linearly as the weight percentage of SiO ₂ increases. Therefore, there is a need for a relationship between a decrease in the color temperature deviation (? CCT) and a decrease in the luminous flux, so that when the SiO ₂ has a weight percentage of 0.4% to 1.4% can confirm.

FIG. 4A is a graph showing the amount of change in color temperature according to the content of Al ₂ O _{3 in} the molding agent 50, FIG. 4B is a graph showing a decrease in the luminous flux according to the content of Al ₂ O _{3 in} the molding agent 50, to be.

Similar to FIGS. 3A and 3B, FIGS. 4A and 4B show variations in color temperature and reduction in luminous flux with respect to weight% of Al ₂ O ₃ . Referring to FIG. 4A, it can be seen that? CCT decreases linearly as the% by weight of Al ₂ O ₃ increases. However, referring to FIG. 4B, the rate at which the luminous flux falls is represented by the weight percentage of Al ₂ O ₃ , and the luminous flux also decreases linearly as the weight percentage of Al ₂ O ₃ increases. Therefore, it is necessary to relate to the decrease of the color temperature deviation (? CCT) and the decrease of the luminous flux, and accordingly, when the Al ₂ O ₃ has the weight percentage of 1% to 3%, the loss of the luminous flux I can confirm that it is not wearing.

5 is a cross-sectional view illustrating a light emitting device package 200 according to an embodiment.

5, the light emitting device package 200 includes a body 110, a light emitting device 130 mounted on the bottom of the body 110, a molding 110 formed on the body 110 and the light emitting device 130, A diffusion agent 170 may be included in the molding material 150 and the molding material 150.

The body 110 may be made of a resin material such as polyphthalamide (PPA), silicon (Si), aluminum (Al), aluminum nitride (AlN), photo sensitive glass (PSG), polyamide 9T ), new geo-isotactic polystyrene (SPS), metal materials, sapphire (Al ₂ O _3), beryllium oxide (BeO), a printed circuit board (PCB: is of the printed circuit board) can be formed by at least one. The body 110 may be formed by injection molding, etching, or the like, but is not limited thereto.

The inner surface of the body 110 may be formed with an inclined surface. The reflection angle of the light emitted from the light emitting device 130 can be changed according to the angle of the inclined surface, and thus the directivity angle of the light emitted to the outside can be controlled. Concentration of light emitted to the outside from the light emitting device 130 increases as the directional angle of light decreases. Conversely, as the directional angle of light increases, the concentration of light emitted from the light emitting device 130 to the outside decreases.

The light emitting device 130 is mounted on the bottom of the body 110 and is electrically connected to an electrode (not shown) to receive light to generate light. The light emitting device 130 may be, for example, a colored light emitting device that emits light such as red, green, blue, or white, or an ultraviolet (UV) light emitting device that emits ultraviolet light. In addition, one or more light emitting elements can be mounted. Since the light emitting element 130 is the same as the above, it is omitted in the following description.

6A and 6B, the light emitting device package 300 according to the embodiment includes a body 310 having a cavity formed therein, first and second electrodes 340 and 350 mounted on the body 310, first and second electrodes 340 and 350, A light emitting device 320 electrically connected to the two electrodes, and an encapsulant 330 formed in the cavity. The encapsulant 330 may include a phosphor (not shown).

The body 310 may be made of a resin material such as polyphthalamide (PPA), silicon (Si), aluminum (Al), aluminum nitride (AlN), photo sensitive glass (PSG), polyamide 9T ), new geo-isotactic polystyrene (SPS), metal materials, sapphire (Al ₂ O _3), beryllium oxide (BeO), is a printed circuit board (PCB, printed circuit board), it may be formed of at least one of ceramic. The body 310 may be formed by injection molding, etching, or the like, but is not limited thereto.

The inner surface of the body 310 may be formed with an inclined surface. The reflection angle of the light emitted from the light emitting device 320 can be changed according to the angle of the inclined surface, and thus the directivity angle of the light emitted to the outside can be adjusted.

The shape of the cavity formed in the body 310 may be circular, square, polygonal, elliptical, or the like, and may have a curved shape, but the present invention is not limited thereto.

The encapsulant 330 may be filled in the cavity and may include a phosphor (not shown). The encapsulant 330 may be formed of transparent silicone, epoxy, and other resin materials. The encapsulant 330 may be formed in such a manner that the encapsulant 330 is filled in the cavity and then cured by ultraviolet rays or heat.

The phosphor (not shown) may be selected according to the wavelength of the light emitted from the light emitting device 320, so that the light emitting device package 300 can realize white light.

The fluorescent material (not shown) included in the encapsulant 330 may be a blue light emitting phosphor, a blue light emitting fluorescent material, a green light emitting fluorescent material, a yellow green light emitting fluorescent material, a yellow light emitting fluorescent material, Fluorescent material, orange light-emitting fluorescent material, and red light-emitting fluorescent material may be applied.

The phosphor (not shown) may be excited by the light having the first light emitted from the light emitting device 320 to generate the second light. For example, when the light emitting element 320 is a blue light emitting diode and the phosphor (not shown) is a yellow phosphor, the yellow phosphor may be excited by blue light to emit yellow light, and blue light emitted from the blue light emitting diode As the yellow light generated by excitation by blue light is mixed, the light emitting device package 300 can provide white light.

When the light emitting device 320 is a green light emitting diode, a magenta fluorescent material or a blue and red fluorescent material (not shown) are mixed. When the light emitting device 320 is a red light emitting diode, For example, a mixture of blue and green phosphors.

The phosphor (not shown) may be a known one such as YAG, TAG, sulfide, silicate, aluminate, nitride, carbide, nitridosilicate, borate, fluoride or phosphate.

The first electrode 340 and the second electrode 350 may be mounted on the body 310. The first electrode 340 and the second electrode 350 may be electrically connected to the light emitting device 320 to supply power to the light emitting device 320.

The first electrode 340 and the second electrode 350 are electrically separated from each other and reflect light generated from the light emitting device 320 to increase light efficiency. The first electrode 340 and the second electrode 350 may discharge heat generated from the light emitting device 320 to the outside.

The light emitting device 320 and the first electrode 340 and the second electrode 350 are formed on the first electrode 340 by wire bonding ) Method, a flip chip method, or a die bonding method.

The first electrode 340 and the second electrode 350 may be formed of a metal material such as titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum ), Platinum (Pt), tin (Sn), silver (Ag), phosphorous (P), aluminum (Al), indium (In), palladium (Pd), cobalt ), Hafnium (Hf), ruthenium (Ru), and iron (Fe). The first electrode 340 and the second electrode 350 may have a single-layer structure or a multi-layer structure, but the present invention is not limited thereto.

The light emitting device 320 is mounted on the first electrode 340 and may be a light emitting device that emits light such as red, green, blue, or white, or a UV (Ultra Violet) However, the present invention is not limited thereto. One or more light emitting elements 320 may be mounted.

The light emitting device 320 is applicable to both a horizontal type whose electrical terminals are all formed on the upper surface, a vertical type formed on the upper and lower surfaces, or a flip chip.

The light emitting device package 300 may include a light emitting device.

The light emitting device 320 may include a first active layer (not shown), a second active layer (not shown), and a carrier injection layer (not shown). The light emitting device 320 includes a carrier injection layer (not shown) to accelerate the mobility of holes provided in a second semiconductor layer (not shown) to provide a first active layer (not shown) and a second active layer (not shown) can do.

The reliability of the light emitting device package 300 including the light emitting device 320 including the carrier injection layer (not shown) and the light extraction amount can be maximized.

A light guide plate, a prism sheet, a diffusion sheet, and the like, which are optical members, may be disposed on a light path of the light emitting device package 300.

The light emitting device package 300, the substrate, and the optical member may function as a light unit. Another embodiment may be implemented as a display device, an indicating device, a lighting system including a light emitting device (not shown) or a light emitting device package 300, for example, the lighting system may include a lamp, a streetlight .

FIG. 7A is a perspective view showing an illumination system including a light emitting device according to an embodiment, and FIG. 7B is a cross-sectional view showing a D-D 'cross section of the illumination system of FIG. 7A.

7B is a cross-sectional view of the illumination system 500 of FIG. 7A taken in the horizontal direction Y, which is cut in the longitudinal direction Z and the height direction X. FIG.

7A and 7B, the illumination system 500 may include a body 510, a cover 530 coupled to the body 510, and a finishing cap 550 positioned at opposite ends of the body 510 have.

The light emitting device module 543 is coupled to the lower surface of the body 510 and the body 510 is electrically connected to the light emitting device package 544 through the upper surface of the body 510, And may be formed of a metal material having excellent heat dissipation effect, but is not limited thereto.

The light emitting device package 544 includes a lens portion (not shown) and a second region where a light emitting device (not shown) is disposed is formed to be thicker than the first region, thereby maximizing lateral light emission. Further, by using the lens portion, the light extraction efficiency of the light emitting device package 544 and the illumination system 500 can be improved and the reliability of the illumination system 500 can be further improved.

The light emitting device package 544 is mounted on the substrate 542 in a multi-color, multi-row manner to form a module. The light emitting device package 544 can be mounted at equal intervals or can be mounted with various spacing distances as required. As the substrate 542, MCPCB (Metal Core PCB) or FR4 PCB can be used.

The cover 530 may be formed in a circular shape so as to surround the lower surface of the body 510, but is not limited thereto.

The cover 530 protects the internal light emitting element module 543 from foreign substances or the like. The cover 530 may include diffusion particles to prevent glare of light generated in the light emitting device package 544 and uniformly emit light to the outside, and may include at least one of an inner surface and an outer surface of the cover 530 A prism pattern or the like may be formed on the surface. Further, the phosphor may be applied to at least one of the inner surface and the outer surface of the cover 530.

The light generated from the light emitting device package 544 is emitted to the outside through the cover 530 so that the cover 530 should have a high light transmittance and sufficient heat resistance to withstand the heat generated from the light emitting device package 544 The cover 530 may be formed of a material including polyethylene terephthalate (PET), polycarbonate (PC), polymethyl methacrylate (PMMA), or the like. have.

The finishing cap 550 is located at both ends of the body 510 and can be used to seal a power supply unit (not shown). The finishing cap 550 is formed with a power supply pin 552, so that the lighting system 500 according to the embodiment can be used immediately without a separate device on a terminal from which a conventional fluorescent lamp is removed.

8 is an exploded perspective view of a liquid crystal display device including a light emitting device according to an embodiment.

8, the liquid crystal display 600 may include a liquid crystal display panel 610 and a backlight unit 670 for providing light to the liquid crystal display panel 610 in an edge-light manner.

The liquid crystal display panel 610 can display an image using light provided from the backlight unit 670. The liquid crystal display panel 610 may include a color filter substrate 612 and a thin film transistor substrate 614 facing each other with a liquid crystal therebetween.

The color filter substrate 612 can realize the color of an image to be displayed through the liquid crystal display panel 610.

The thin film transistor substrate 614 is electrically connected to a printed circuit board 618 on which a plurality of circuit components are mounted through a driving film 617. The thin film transistor substrate 614 can apply a driving voltage provided from the printed circuit board 618 to the liquid crystal in response to a driving signal provided from the printed circuit board 618. [

The thin film transistor substrate 614 may include a thin film transistor and a pixel electrode formed as a thin film on another substrate of a transparent material such as glass or plastic.

The backlight unit 670 includes a light emitting element module 620 that outputs light, a light guide plate 630 that changes the light provided from the light emitting element module 620 into a surface light source and provides the light to the liquid crystal display panel 610, A plurality of films 650, 666, and 664 for uniformly distributing the luminance of light provided from the light guide plate 630 and improving vertical incidence, and a reflective sheet (not shown) for reflecting light emitted to the rear of the light guide plate 630 to the light guide plate 630 640).

The light emitting device module 620 may include a PCB substrate 622 to mount a plurality of light emitting device packages 624 and a plurality of light emitting device packages 624 to form a module.

The light emitting device package 644 includes a lens unit (not shown), and the second area where the light emitting device (not shown) is disposed is formed to be thicker than the first area, thereby maximizing lateral light emission. Further, by using the lens portion, the light extraction efficiency of the backlight unit 670 can be improved and the reliability of the backlight unit 670 can be further improved.

The backlight unit 670 includes a diffusion film 666 for diffusing light incident from the light guide plate 630 toward the liquid crystal display panel 610 and a prism film 650 for enhancing vertical incidence by condensing the diffused light And may include a protective film 664 for protecting the prism film 650.

9 is an exploded perspective view of a liquid crystal display device including a light emitting device according to an embodiment. However, the parts shown and described in Fig. 8 are not repeatedly described in detail.

9, the liquid crystal display device 700 may include a liquid crystal display panel 710 and a backlight unit 770 for providing light to the liquid crystal display panel 710 in a direct-down manner.

Since the liquid crystal display panel 710 is the same as that described in FIG. 8, detailed description is omitted.

The backlight unit 770 includes a plurality of light emitting element modules 723, a reflective sheet 724, a lower chassis 730 in which the light emitting element module 723 and the reflective sheet 724 are accommodated, And a plurality of optical films 760 disposed on the diffuser plate 740. [

The light emitting device module 723 may include a PCB substrate 721 to mount a plurality of light emitting device packages 722 and a plurality of light emitting device packages 722 to form a module.

The light emitting device package 722 includes a lens unit (not shown), and a second region in which a light emitting device (not shown) is disposed is formed to be thicker than the first region, thereby maximizing lateral light emission. Further, by using a lens unit (not shown), the light extraction efficiency of the backlight unit 770 can be improved and the reliability of the backlight unit 770 can be further improved.

The reflective sheet 724 reflects light generated from the light emitting device package 722 in a direction in which the liquid crystal display panel 710 is positioned, thereby improving light utilization efficiency.

The light generated from the light emitting element module 723 is incident on the diffusion plate 740 and the optical film 760 is disposed on the diffusion plate 740. The optical film 760 is composed of a diffusion film 766, a prism film 750, and a protective film 764.

The configuration and the method of the embodiments described above are not limitedly applied, but the embodiments may be modified so that all or some of the embodiments are selectively combined so that various modifications can be made. .

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It should be understood that various modifications may be made by those skilled in the art without departing from the spirit and scope of the present invention.

10: substrate
30: Light emitting element
50: Molding agent
70: Diffusing agent
100: Light emitting device package
110: Body
130: Light emitting element
150: Molding agent
170: Diffusing agent
200: Light emitting device package

Claims (3)

Board;
A light emitting element mounted on the substrate;
A molding agent formed on the substrate and the light emitting element;
A diffusion agent contained in the molding agent; And
Wherein the diffusing agent is SiO ₂ and the weight% is 0.4% or more and 1.4% or less, or the diffusing agent is Al ₂ O ₃ and the weight% is 1% or more and 3% or less. The method according to claim 1,
Wherein the molding material is formed in a lens shape or a dome shape. The method according to claim 1,
Wherein the diffusing agent is randomly distributed in the molding material.

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