KR20140099683A - Light Emitting Devices package - Google Patents

Abstract

In order to improve light extraction efficiency of a light emitting device package, a light emitting device package according to an embodiment of the present invention includes a substrate; A light emitting element mounted on the substrate; A phosphor coating layer disposed on the light emitting element; A first encapsulant disposed on the substrate and the light emitting device and formed in a dome shape; And a second encapsulant disposed on the substrate and the first encapsulant and having a refractive index smaller than the refractive index of the first encapsulant.

Description

A light emitting device package

An embodiment relates to a light emitting device package.

LED (Light Emitting Diode) is a device that converts electrical signals into infrared, visible light or light using the characteristics of compound semiconductors. It is used in household appliances, remote controls, display boards, The use area of LED is becoming wider. LED has advantages of low power consumption, semi-permanent lifetime, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps.

In general, miniaturized LEDs are made of a surface mounting device for mounting directly on a PCB (Printed Circuit Board) substrate, and an LED lamp used as a display device is also being developed as a surface mounting device type . Such a surface mount device can replace a conventional simple lighting lamp, which is used for a lighting indicator for various colors, a character indicator, an image indicator, and the like.

LED semiconductors are grown by a process such as MOCVD or molecular beam epitaxy (MBE) on a substrate such as sapphire or silicon carbide (SiC) having a hexagonal system structure.

Embodiments provide a light emitting device package having improved light extraction efficiency of a light emitting device package.

A light emitting device package according to an embodiment of the present invention includes a substrate; A light emitting element mounted on the substrate; A phosphor coating layer disposed on the light emitting element; A first encapsulant disposed on the substrate and the light emitting device and formed in a dome shape; And a second encapsulant disposed on the substrate and the first encapsulant and having a refractive index smaller than the refractive index of the first encapsulant.

The refractive index of the first encapsulant may be smaller than the refractive index of the phosphor coating layer.

The refractive index of the phosphor coating layer may be the same as the refractive index of the light emitting device. The thickness of the phosphor coating layer may be 5 to 20 μm, and the refractive index of the phosphor coating layer may be 1.77 to 2.5. .

The index of refraction of the second encapsulant may be greater than the index of refraction of air, and the index of refraction of the second encapsulant may be greater than 1 and less than the index of refraction of the first encapsulant.

The third encapsulant may include a third encapsulant on the second encapsulant, the third encapsulant being smaller than the refractive index of the second encapsulant and larger than the refractive index of the air, and the third encapsulant may be a dome-shaped one.

The encapsulant may further include a plurality of encapsulants on the second encapsulant, the encapsulants being smaller than the refractive index of the second encapsulant and higher than the refractive index of the air, wherein the plurality of encapsulants are linearly reduced from the phosphor coating layer Lt; / RTI >

The light emitting device package according to the embodiment of the present invention can improve the light extraction efficiency by forming a plurality of encapsulants having different refractive indexes.

1 is a cross-sectional view illustrating a light emitting device package according to an embodiment.
2 is a cross-sectional view illustrating a light emitting device package according to an embodiment.
3 is a cross-sectional view illustrating a light emitting device package according to an embodiment.
4A is a perspective view showing a light emitting device package including the light emitting device of the embodiment.
4B is a cross-sectional view illustrating a light emitting device package including the light emitting device of the embodiment.
5A is a perspective view illustrating a lighting device including a light emitting device module according to an embodiment.
5B is a cross-sectional view illustrating a lighting device including the light emitting device module according to the embodiment.
6 is an exploded perspective view illustrating a backlight unit including a light emitting device module according to an embodiment.
7 is an exploded perspective view illustrating a backlight unit including a light emitting device module according to an embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

The terms spatially relative, "below", "beneath", "lower", "above", "upper" May be used to readily describe a device or a relationship of components to other devices or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the drawings, terms that include different orientations of the device during use or operation. For example, when inverting an element shown in the figures, an element described as "below" or "beneath" of another element may be placed "above" another element. Thus, the exemplary term "below" can include both downward and upward directions. The elements can also be oriented in different directions, so that spatially relative terms can be interpreted according to orientation.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. It is noted that the terms "comprises" and / or "comprising" used in the specification are intended to be inclusive in a manner similar to the components, steps, operations, and / Or additions.

Unless defined otherwise, all terms (including technical and scientific terms) used herein may be used in a sense commonly understood by one of ordinary skill in the art to which this invention belongs. Also, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size and area of each component do not entirely reflect actual size or area.

Further, the angle and direction mentioned in the description of the structure of the light emitting device in the embodiment are based on those shown in the drawings. In the description of the structure of the light emitting device in the specification, reference points and positional relationship with respect to angles are not explicitly referred to, refer to the related drawings.

Hereinafter, embodiments will be described in detail with reference to the drawings.

1 is a cross-sectional view illustrating a light emitting device package 100 according to an embodiment.

1, the light emitting device package 100 may include a substrate 10, a light emitting device 20 mounted on the substrate 10, and a phosphor coating layer 30 disposed on the light emitting device 20 A first encapsulant 50 disposed on the substrate 10 and the light emitting device 20 and a second encapsulant 50 disposed on the substrate 10 and the first encapsulant 50 And may include an encapsulant 70.

The substrate 10 may be a flat substrate made of one of a ceramic material, a synthetic resin material and a printed circuit board (PCB), and may include electrodes (not shown) formed on the substrate 10 .

The electrode (not shown) may be formed of a metal material. For example, an electrode (not shown) may be formed of a metal such as titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Al), indium (In), palladium (Pd), cobalt (Co), silicon (Si), germanium (Ge), hafnium (Hf), ruthenium (Ru) , Iron (Fe), or the like. Also, the electrode (not shown) may be formed to have a single layer or a multilayer structure, but is not limited thereto.

The light emitting device 20 is mounted on the substrate 10 and is electrically connected to an electrode (not shown) to receive light to generate light. The light emitting device 20 may be, for example, a colored light emitting device that emits light such as red, green, blue, or white, or an ultraviolet (UV) light emitting device that emits ultraviolet light.

The light emitting device 20 may include a light emitting structure (not shown) including a first semiconductor layer (not shown), an active layer (not shown), and a second semiconductor layer (not shown). An active layer (not shown) may be disposed between the first semiconductor layer (not shown) and the second semiconductor layer (not shown).

At least one of the first semiconductor layer (not shown) and the second semiconductor layer (not shown) may be implemented as a p-type semiconductor layer doped with a p-type dopant, and the other may be an n-type semiconductor layer Lt; / RTI > When the first semiconductor layer (not shown) is a p-type semiconductor layer, the second semiconductor layer (not shown) may be an n-type semiconductor layer and vice versa.

the p-type semiconductor layer is a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0 = x = 1, 0 = y = 1, 0 = x + y = 1) aluminum nitride, AlN, AlGaN, InGaN, indium nitride, InAlGaN, AlInN, and the like, and may be selected from the group consisting of Mg, Zn, Ca), strontium (Sr), barium (Ba), or the like can be doped.

The n-type semiconductor layer may be a semiconductor material having a composition formula of, for example, In _x Al _y Ga _{1 -x- y} N (0 = x = 1, 0 = y = 1, 0 = x + y = 1) (Al), aluminum nitride (AlN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), indium nitride (InN), InAlGaN, AlInN, and the like. An n-type dopant such as Ge, Sn, Se, or Te may be doped.

An active layer (not shown) may be interposed between the first semiconductor layer (not shown) and the second semiconductor layer (not shown). The active layer (not shown) may be formed of a single or multiple quantum well structure, a quantum-wire structure, a quantum dot structure, or the like using a compound semiconductor material of Group 3-V group elements.

In the case where the active layer (not shown) has a quantum well structure, for example, a composition formula of In _x Al _y Ga _{1 -x- y} N (0 = x = 1, 0 = y = 1, 0 = x + y = 1) well layer and the _{in a Al b Ga 1 -a- b} N (0 = a = 1, 0 = b = 1, 0 = a + b = 1) or a single quantum well structure having a barrier layer having a composition formula having Lt; / RTI > The well layer may be formed of a material having a band gap lower than the band gap of the barrier layer.

A conductive clad layer (not shown) may be formed on and / or below the active layer (not shown). The conductive clad layer (not shown) may be formed of an AlGaN-based semiconductor and may have a band gap larger than that of the active layer (not shown).

The light emitting device 20 may be electrically connected to an electrode (not shown) by a wire bonding method, a flip chip method, or a die bonding method.

The light emitting device 20 may be one of a horizontal type in which electrical terminals are all formed on the upper surface, a vertical type formed in the upper and lower surfaces, or a flip chip.

The horizontal type light emitting device 20 may be in the form of a light emitting structure (not shown) disposed on the substrate 10. The light emitting structure (not shown) may include a first semiconductor layer (not shown), an active layer (not shown), and a second semiconductor layer (not shown). A first semiconductor layer (not shown) may be disposed on the substrate 10, and a second semiconductor layer (not shown) may be disposed on the first semiconductor layer (not shown). An active layer (not shown) may be disposed between the first semiconductor layer (not shown) and the second semiconductor layer (not shown).

A second electrode layer (not shown) may be disposed on the second semiconductor layer (not shown). A part of the first semiconductor layer (not shown) is partially exposed, and a first electrode layer is formed on the exposed top surface of the first semiconductor layer (not shown) .

The horizontal light emitting device 20 may be electrically connected to an electrode (not shown) by a wire bonding method.

The flip chip type light emitting device 20 may have the same structure as the horizontal type light emitting device 20.

The lead frame (not shown) may be disposed on both lateral sides of the longitudinal direction of the light emitting device package 100, and may be arranged to contact the lower region of the substrate 10 by being bent at least once, .

The lead frame (not shown) may be made of a metal material such as Ti, Cu, Ni, Au, Cr, Ta, Pt, (Al), indium (In), palladium (Pd), cobalt (Co), silicon (Si), germanium (Ge), hafnium (Hf), tin (Sn), silver (Ag) , Ruthenium (Ru), iron (Fe), or the like. Further, the lead frame (not shown) may be formed to have a single layer or a multilayer structure, and a plurality of lead frames (not shown) may be disposed, but the present invention is not limited thereto.

The light emitting device 20 may be electrically connected to a lead frame (not shown). The lead frame (not shown) and the light emitting device 20 may be directly connected to each other or may be wire-bonded via a conductive wire. The lead frame (not shown) protrudes to the outside of the substrate 10 to be electrically connected to an external power source. The lead frame (not shown) protruding outwardly can have various shapes and can be bent into various shapes. When an external power source is connected to a lead frame (not shown), power may be applied to the light emitting device 20.

The phosphor coating layer 30 may be formed on the light emitting device 20. The refractive index of the phosphor coating layer 30 may be the same as the refractive index of the light emitting element 20, but is not limited thereto. When the refractive index of the phosphor coating layer 30 is equal to or similar to the refractive index of the light emitting device 20, the light generated from the light emitting device 20 can proceed in a direction in which the light emitting device 20 proceeds without any refraction, Can be increased. The refractive index of the phosphor coating layer 30 may be equal to or greater than the refractive index of the first encapsulant 50. When the refractive index of the phosphor coating layer 30 is equal to or larger than the refractive index of the first encapsulant 50, the total internal reflection is minimized and the re-entry into the light emitting element 20 is suppressed, The efficiency can be improved. The refractive index of the phosphor coating layer 30 may be 1.77 to 2.5. The refractive index of the phosphor coating layer 30 may be determined according to the substrate of the light emitting device 20. [ For example, the refractive index of the phosphor coating layer 30 may be 1.7 when the substrate of the light emitting device 20 is sapphire, and the refractive index of the phosphor coating layer 30 may be such that the substrate of the light emitting device 20 is gallium nitride And may be 2.5 in the case of ridgeline (GaN) or silicon carbide (SiC).

The thickness of the phosphor coating layer 30 may be 5 탆 to 20 탆, but is not limited thereto. If the thickness of the phosphor coating layer 30 is less than 5 탆, the phosphor coating layer 30 must be positioned on the light emitting device 20 in a separate process. If the thickness of the phosphor coating layer 30 is If the thickness of the phosphor coating layer 30 is greater than 20 μm, the thickness of the phosphor coating layer 30 becomes too thick, so that light generated from the light emitting device 20 may be absorbed to reduce the efficiency of the light emitting device package 100.

The first encapsulant 50 may be formed of silicon, epoxy, or other resin material. When the center portion and the edge are compared with respect to the light emitted from the light emitting device 20 after forming only the first encapsulant 50, a yellow ring may be generated due to the difference in color temperature. The first encapsulant 50 may include a diffusing agent (not shown) therein. The first encapsulant 50 may be disorderly contained therein without a regularity of the diffuser (not shown).

The refractive index of the first encapsulant 50 may be less than the refractive index of the phosphor coating layer 30. When the refractive index of the first encapsulant 50 is smaller than the refractive index of the phosphor coating layer 30, the total internal reflection is minimized to prevent re-entry into the light emitting device 20, thereby improving the light extraction efficiency of the light emitting device package 100 can do. The refractive index of the first encapsulant 50 may be greater than the refractive index of the second encapsulant 70. [ If the refractive index of the first encapsulant 50 is greater than the refractive index of the second encapsulant 70, the total internal reflection can also be reduced.

The first encapsulant 50 may be formed in a dome shape, but is not limited thereto. The first encapsulant 50 may have a shape similar to the distribution of the intensity of light emitted from the light emitting device 20. [ The first encapsulant 50 may be formed flat.

2 is a cross-sectional view illustrating a light emitting device package 100 according to an embodiment.

2, the refractive index of the second encapsulant 70 may be greater than the refractive index of the air, but is not limited thereto. The refractive index of the second encapsulant 70 may be smaller than the refractive index of the second encapsulant 70 A third encapsulant 60 having a refractive index can be formed.

3 is a cross-sectional view illustrating a light emitting device package 100 according to an embodiment.

3, the third encapsulant 60 may be larger than the refractive index of the second encapsulant 70 and smaller than the refractive index of the air. Further, a plurality of sealing materials may be formed on the second sealing material 70. [ The third encapsulant 60 may be formed in a dome shape. In addition, the plurality of encapsulants may be formed such that the refractive index is linearly decreased from the refractive index of the fluorescent layer coating layer to the refractive index of the air, but is not limited thereto.

4A is a perspective view illustrating a light emitting device package 300 according to an exemplary embodiment of the present invention, and FIG. 4B is a cross-sectional view illustrating a light emitting device package 300 according to another exemplary embodiment.

4A and 4B, the light emitting device package 300 according to the embodiment includes a body 310 having a cavity, first and second electrodes 340 and 350 mounted on the body 310, first and second electrodes 340 and 350, A light emitting device 320 electrically connected to the two electrodes, and an encapsulant 330 formed in the cavity. The encapsulant 330 may include a phosphor (not shown).

The body 310 is made of a resin material such as polyphthalamide (PPA), silicon (Si), aluminum (Al), aluminum nitride (AlN), liquid crystal polymer (PSG), polyamide 9T ), new geo-isotactic polystyrene (SPS), metal materials, sapphire (Al ₂ O _3), beryllium oxide (BeO), is a printed circuit board (PCB, printed circuit board), it may be formed of at least one of ceramic. The body 310 may be formed by injection molding, etching, or the like, but is not limited thereto.

The inner surface of the body 310 may be formed with an inclined surface. The reflection angle of the light emitted from the light emitting device 320 can be changed according to the angle of the inclined surface, and thus the directivity angle of the light emitted to the outside can be adjusted.

The shape of the cavity formed in the body 310 may be circular, square, polygonal, elliptical, or the like, and may have a curved shape, but the present invention is not limited thereto.

The encapsulant 330 may be filled in the cavity and may include a phosphor (not shown). The encapsulant 330 may be formed of transparent silicone, epoxy, and other resin materials. The encapsulant 330 may be formed in such a manner that the encapsulant 330 is filled in the cavity and then cured by ultraviolet rays or heat.

The phosphor (not shown) may be selected according to the wavelength of the light emitted from the light emitting device 320, so that the light emitting device package 300 can realize white light.

The fluorescent material (not shown) included in the encapsulant 330 may be a blue light emitting phosphor, a blue light emitting fluorescent material, a green light emitting fluorescent material, a yellow green light emitting fluorescent material, a yellow light emitting fluorescent material, Fluorescent material, orange light-emitting fluorescent material, and red light-emitting fluorescent material may be applied.

The phosphor (not shown) may be excited by the light having the first light emitted from the light emitting device 320 to generate the second light. For example, when the light emitting element 320 is a blue light emitting diode and the phosphor (not shown) is a yellow phosphor, the yellow phosphor may be excited by blue light to emit yellow light, As the yellow light generated by excitation by blue light is mixed, the light emitting device package 300 can provide white light.

When the light emitting device 320 is a green light emitting diode, a magenta fluorescent material or a blue and red fluorescent material (not shown) are mixed. When the light emitting device 320 is a red light emitting diode, For example, a mixture of blue and green phosphors.

The phosphor (not shown) may be a known one such as YAG, TAG, sulfide, silicate, aluminate, nitride, carbide, nitridosilicate, borate, fluoride or phosphate.

The first electrode 340 and the second electrode 350 may be mounted on the body 310. The first electrode 340 and the second electrode 350 may be electrically connected to the light emitting device 320 to supply power to the light emitting device 320.

The first electrode 340 and the second electrode 350 are electrically separated from each other and reflect light generated from the light emitting device 320 to increase light efficiency. The first electrode 340 and the second electrode 350 may discharge heat generated from the light emitting device 320 to the outside.

The light emitting device 320 and the first electrode 340 and the second electrode 350 may be formed by wire bonding or the like, ) Method, a flip chip method, or a die bonding method.

The first electrode 340 and the second electrode 350 may be formed of a metal material such as titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum ), Platinum (Pt), tin (Sn), silver (Ag), phosphorous (P), aluminum (Al), indium (In), palladium (Pd), cobalt ), Hafnium (Hf), ruthenium (Ru), and iron (Fe). The first electrode 340 and the second electrode 350 may have a single-layer structure or a multi-layer structure, but the present invention is not limited thereto.

The light emitting device 320 is mounted on the first electrode 340 and may be a light emitting device that emits light such as red, green, blue, or white, or a UV (Ultra Violet) However, the present invention is not limited thereto. One or more light emitting elements 320 may be mounted.

The light emitting device 320 is applicable to both a horizontal type whose electrical terminals are all formed on the upper surface, a vertical type formed on the upper and lower surfaces, or a flip chip.

The light emitting device package 300 may include a light emitting device.

The light emitting device 320 may include a first active layer (not shown), a second active layer (not shown), and a carrier injection layer (not shown). The light emitting device 320 includes a carrier injection layer (not shown) to accelerate the mobility of holes provided in a second semiconductor layer (not shown) to provide a first active layer (not shown) and a second active layer (not shown) can do.

The reliability of the light emitting device package 300 including the light emitting device 320 including the carrier injection layer (not shown) and the light extraction amount can be maximized.

A light guide plate, a prism sheet, a diffusion sheet, and the like, which are optical members, may be disposed on a light path of the light emitting device package 300.

The light emitting device package 300, the substrate, and the optical member may function as a light unit. Another embodiment may be implemented as a display device, an indicating device, a lighting system including a light emitting device (not shown) or a light emitting device package 300, for example, the lighting system may include a lamp, a streetlight .

FIG. 5A is a perspective view illustrating an illumination system 400 including a light emitting device according to an embodiment, and FIG. 5B is a cross-sectional view illustrating a D-D 'cross section of the illumination system of FIG. 5A.

5B is a cross-sectional view of the illumination system 400 of FIG. 5A cut in the longitudinal direction Z and the height direction X and viewed in the horizontal direction Y. FIG.

5A and 5B, the lighting system 400 may include a body 410, a cover 430 coupled to the body 410, and a finishing cap 450 positioned at opposite ends of the body 410 have.

The light emitting device module 443 is coupled to a lower surface of the body 410. The body 410 is electrically connected to the light emitting device package 444 through the upper surface of the body 410, And may be formed of a metal material having excellent heat dissipation effect, but is not limited thereto.

The light emitting device package 444 includes a light emitting element (not shown).

The light emitting device package 444 may be mounted on the substrate 442 in a multi-color, multi-row manner to form a module. The light emitting device package 444 may be mounted at equal intervals or may be mounted with various spacings as needed. As the substrate 442, MCPCB (Metal Core PCB) or FR4 PCB can be used.

The cover 430 may be formed in a circular shape so as to surround the lower surface of the body 410, but is not limited thereto.

The cover 430 can protect the internal light emitting element module 443 from foreign substances or the like. The cover 430 may include diffusion particles to prevent glare of light generated in the light emitting device package 444 and uniformly emit light to the outside, and may include at least one of an inner surface and an outer surface of the cover 430 A prism pattern or the like may be formed on the surface. Further, the phosphor may be coated on at least one of the inner surface and the outer surface of the cover 430.

The light generated from the light emitting device package 444 is emitted to the outside through the cover 430 so that the cover 430 should have excellent light transmittance and sufficient heat resistance to withstand the heat generated from the light emitting device package 444 The cover 430 may be formed of a material including polyethylene terephthalate (PET), polycarbonate (PC), polymethyl methacrylate (PMMA), or the like. have.

The finishing cap 450 is located at both ends of the body 410 and can be used for sealing the power supply unit (not shown). The finishing cap 450 is formed with the power pin 452, so that the lighting system 400 according to the embodiment can be used immediately without a separate device on the terminal from which the conventional fluorescent lamp is removed.

6 is an exploded perspective view of a liquid crystal display device including a light emitting device according to an embodiment.

6, the liquid crystal display device 500 may include a backlight unit 570 for providing light to the liquid crystal display panel 510 and the liquid crystal display panel 510 in an edge-light manner.

The liquid crystal display panel 510 can display an image using the light provided from the backlight unit 570. The liquid crystal display panel 510 may include a color filter substrate 512 and a thin film transistor substrate 514 facing each other with a liquid crystal therebetween.

The color filter substrate 512 can realize the color of an image to be displayed through the liquid crystal display panel 510.

The thin film transistor substrate 514 is electrically connected to a printed circuit board 518 on which a plurality of circuit components are mounted via a driving film 517. The thin film transistor substrate 514 may apply a driving voltage provided from the printed circuit board 518 to the liquid crystal in response to a driving signal provided from the printed circuit board 518. [

The thin film transistor substrate 514 may include a thin film transistor and a pixel electrode formed as a thin film on another substrate of a transparent material such as glass or plastic.

The backlight unit 570 includes a light emitting device module 520 for outputting light, a light guide plate 530 for changing the light provided from the light emitting module 520 into a surface light source to provide the light to the liquid crystal display panel 510, A plurality of films 550, 560, and 564 that uniformly distribute the luminance of light provided from the light guide plate 530 and improve vertical incidence, and a reflective sheet (not shown) that reflects light emitted to the rear of the light guide plate 530 to the light guide plate 530 540).

The light emitting device module 520 may include a PCB substrate 522 to mount a plurality of light emitting device packages 524 and a plurality of light emitting device packages 524 to form a module.

The light extraction efficiency of the backlight unit 570 including the light emitting device package 524 can be improved and the reliability of the backlight unit 570 can be further improved.

The backlight unit 570 includes a diffusion film 566 for diffusing light incident from the light guide plate 530 toward the liquid crystal display panel 510 and a prism film 550 for enhancing vertical incidence by condensing the diffused light And may include a protective film 564 for protecting the prism film 550.

7 is an exploded perspective view of a liquid crystal display device including a light emitting device according to an embodiment. However, the parts shown and described in Fig. 6 are not repeatedly described in detail.

7 is a direct-view liquid crystal display device 600 according to the embodiment. The liquid crystal display device 600 may include a liquid crystal display panel 610 and a backlight unit 670 for providing light to the liquid crystal display panel 610. Since the liquid crystal display panel 610 is the same as that described with reference to FIG. 6, detailed description is omitted.

The backlight unit 670 includes a plurality of light emitting element modules 623, a reflective sheet 624, a lower chassis 630 in which the light emitting element module 623 and the reflective sheet 624 are accommodated, And a plurality of optical films 660 disposed on the diffuser plate 640.

The light emitting device module 623 may include a PCB substrate 621 to mount a plurality of light emitting device packages 622 and a plurality of light emitting device packages 622 to form a module.

The reflective sheet 624 reflects light generated from the light emitting device package 622 in a direction in which the liquid crystal display panel 610 is positioned, thereby improving light utilization efficiency.

The light emitted from the light emitting element module 623 is incident on the diffusion plate 640 and the optical film 660 is disposed on the diffusion plate 640. The optical film 660 is composed of a diffusion film 666, a prism film 650, and a protective film 664.

The configuration and the method of the embodiments described above are not limitedly applied, but the embodiments may be modified so that all or some of the embodiments are selectively combined so that various modifications can be made. .

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It should be understood that various modifications may be made by those skilled in the art without departing from the spirit and scope of the invention.

10: substrate
20: Light emitting element
30: phosphor coating layer
50: First encapsulant
60: Third bag material
70: Second encapsulant
100: Light emitting device package

Claims (11)

Board;
A light emitting element mounted on the substrate;
The phosphor coating layer
A first encapsulant disposed on the substrate and the light emitting device and formed in a dome shape; And
And a second encapsulant disposed on the substrate and the first encapsulant and having a refractive index smaller than the refractive index of the first encapsulant.
The method according to claim 1,
Wherein the refractive index of the first encapsulant is smaller than the refractive index of the phosphor coating layer.
The method according to claim 1,
Wherein the refractive index of the phosphor coating layer is the same as the refractive index of the light emitting element.
The method according to claim 1,
Wherein the phosphor coating layer has a thickness of 5 占 퐉 to 20 占 퐉.
The method according to claim 1,
And the refractive index of the phosphor coating layer is 1.77 to 2.5.
The method according to claim 1,
Wherein the refractive index of the second encapsulant is greater than the refractive index of air.
The method according to claim 1,
Wherein the refractive index of the second encapsulant is at least 1 and smaller than the refractive index of the first encapsulant.
The method according to claim 1,
And a third encapsulant on the second encapsulant, the third encapsulant being smaller than the refractive index of the second encapsulant and greater than the refractive index of air.
9. The method of claim 8,
And the third encapsulation material is a dome-shaped.
The method according to claim 1,
And a plurality of encapsulants on the second encapsulant, the encapsulant being smaller than the refractive index of the second encapsulant and higher than the refractive index of air.
11. The method of claim 10,
Wherein the plurality of sealing materials linearly decrease from the phosphor coating layer to a portion where the refractive index abuts against the outside.

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