KR20140097603A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
KR20140097603A
KR20140097603A KR1020130009467A KR20130009467A KR20140097603A KR 20140097603 A KR20140097603 A KR 20140097603A KR 1020130009467 A KR1020130009467 A KR 1020130009467A KR 20130009467 A KR20130009467 A KR 20130009467A KR 20140097603 A KR20140097603 A KR 20140097603A
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KR
South Korea
Prior art keywords
layer
light emitting
current blocking
emitting device
pad
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Application number
KR1020130009467A
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Korean (ko)
Inventor
황성민
오소영
이지환
Original Assignee
엘지이노텍 주식회사
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Priority to KR1020130009467A priority Critical patent/KR20140097603A/en
Publication of KR20140097603A publication Critical patent/KR20140097603A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials

Abstract

A light emitting device according to an embodiment of the present invention includes a substrate; A light emitting structure disposed on the substrate and including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; A transparent electrode layer disposed on the second semiconductor layer; A second electrode disposed on the transparent electrode layer and including a second finger connected to the second pad and the second pad; And a current blocking layer disposed between the transparent electrode layer and the second pad and including a dielectric material, wherein a plurality of current blocking layers and a plurality of current blocking layers are disposed apart from each other below the second finger.

Description

LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE CONTAINING THE SAME

An embodiment relates to a light emitting device and a light emitting device package including the same.

Light Emitting Diode (LED) is a device that converts electrical signals into light by using the characteristics of compound semiconductors. It is widely used in household appliances, remote control, electric signboard, display, and various automation devices. There is a trend.

When a forward voltage is applied to the light emitting device, electrons in the n-layer and holes in the p-layer are coupled to emit energy corresponding to the energy gap between the conduction band and the valance band. It is mainly emitted in the form of heat or light, and when emitted in the form of light, it becomes an LED.

Nitride semiconductors have attracted great interest in the development of optical devices and high output electronic devices due to their high thermal stability and wide band gap energy. Particularly, blue light emitting devices, green light emitting devices, ultraviolet (UV) light emitting devices, and the like using nitride semiconductors have been commercialized and widely used.

In order to increase the light efficiency of the light emitting device, it is an important issue to supply a current horizontally and evenly to the semiconductor layer. It is necessary to improve the coupling or the deterioration of light efficiency caused by the current density being concentrated only in the region close to the electrode.

The light emitting device package is manufactured by manufacturing a light emitting device on a substrate, separating the light emitting device chip through dieseparation, which is a sawing process, and then diebonding the light emitting device chip to a package body. Wire bonding and molding can be performed, and the test can proceed.

Embodiments of the present invention provide a light emitting device having improved light efficiency by disposing a current blocking layer including a dielectric between a transparent electrode layer and a second electrode to solve the problem of concentration of current locally.

A light emitting device according to an embodiment of the present invention includes a substrate; A light emitting structure disposed on the substrate and including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; A transparent electrode layer disposed on the second semiconductor layer; A second electrode disposed on the transparent electrode layer and including a second finger connected to the second pad and the second pad; And a current blocking layer disposed between the transparent electrode layer and the second pad and including a dielectric material, wherein a plurality of current blocking layers and a plurality of current blocking layers are disposed apart from each other below the second finger.

The light emitting device and the light emitting device package of the various embodiments of the present invention have one or more of the following effects.

The light emitting device according to one embodiment may include a current blocking layer between the transparent electrode layer and the second electrode to emit light to the outside, thereby improving light extraction efficiency.

The light emitting device according to one embodiment may include a current blocking layer including a dielectric between the transparent electrode layer and the second electrode so that supply of current to the second semiconductor layer only in a region close to the electrode pad can be minimized.

The light emitting device according to one embodiment can minimize the amount of light absorbed by the current blocking layer by stacking the dielectric layer and the metal layer.

1 is a cross-sectional view illustrating a light emitting device according to an embodiment,
FIG. 2 is a top view illustrating a top surface of a light emitting device according to an embodiment,
3 is a cross-sectional view illustrating a light emitting device according to an embodiment,
4A and 4B are a perspective view and a cross-sectional view of a light emitting device package including a light emitting device according to an embodiment,
5A is a perspective view illustrating a lighting device including a light emitting device package according to an embodiment,
5B is a cross-sectional view illustrating a lighting device including a light emitting device package according to an embodiment,
6 is a conceptual view illustrating a liquid crystal display device including a light emitting device package according to an embodiment,
7 is a conceptual diagram illustrating a liquid crystal display device including a light emitting device package according to an embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

The terms spatially relative, "below", "beneath", "lower", "above", "upper" May be used to readily describe a device or a relationship of components to other devices or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the drawings, terms that include different orientations of the device during use or operation. For example, when inverting an element shown in the figures, an element described as "below" or "beneath" of another element may be placed "above" another element. Thus, the exemplary term "below" can include both downward and upward directions. The elements can also be oriented in different directions, so that spatially relative terms can be interpreted according to orientation.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. It is noted that the terms "comprises" and / or "comprising" used in the specification are intended to be inclusive in a manner similar to the components, steps, operations, and / Or additions.

Unless defined otherwise, all terms (including technical and scientific terms) used herein may be used in a sense commonly understood by one of ordinary skill in the art to which this invention belongs. Also, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size and area of each component do not entirely reflect actual size or area.

Further, the angle and direction mentioned in the description of the structure of the light emitting device in the embodiment are based on those shown in the drawings. In the description of the structure of the light emitting device in the specification, reference points and positional relationship with respect to angles are not explicitly referred to, refer to the related drawings.

Hereinafter, embodiments will be described in detail with reference to the drawings.

FIG. 1 is a cross-sectional view illustrating a light emitting device according to one embodiment, and FIG. 2 is a top view illustrating a top surface of a light emitting device according to one embodiment.

1 and 2, a light emitting device 100 according to an exemplary embodiment includes a substrate 110, a first semiconductor layer 132, a second semiconductor layer 136, A light emitting structure 130 including an active layer 134 disposed between the first semiconductor layer 132 and the second semiconductor layer 136; a transparent electrode layer 160 disposed on the second semiconductor layer 136; A second electrode 150 disposed on the electrode layer 160 and including a second finger 154 connected to the second pad 152 and the second pad 152 and a second electrode 150 including the transparent electrode layer 160 and the second electrode 150, And a plurality of current blocking layers 170 are disposed between the first and second fingers 154 and 152. The current blocking layer 170 includes a current blocking layer 170 including a dielectric material, And are spaced apart from each other.

The substrate 110 may be disposed under the first semiconductor layer 132. The substrate 110 may support the first semiconductor layer 132. The substrate 110 may receive heat from the first semiconductor layer 132. The substrate 110 may have optically transmissive properties. For example, the substrate 110 may include, but is not limited to, sapphire (Al 2 O 3 ). The substrate 110 may have a light transmitting property when it is formed using a light transmitting material or a material having a certain thickness or less, but the present invention is not limited thereto. The refractive index of the substrate 110 is preferably smaller than the refractive index of the first semiconductor layer 132 for the purpose of light extraction efficiency, but is not limited thereto.

The substrate 110 may be formed of a semiconductor material, for example, Si, Ge, GaAs, ZnO, SiC, It can be implemented with a carrier wafer such as a silicon germanium (SiGe), gallium nitride (GaN), gallium (ⅲ) oxide (Ga 2 O 3).

The substrate 110 may be formed of a conductive material. (Au), nickel (Ni), tungsten (W), molybdenum (Mo), copper (Cu), aluminum (Al), tantalum (Ag), platinum (Pt), and chromium (Cr), or may be formed of two or more alloys, and two or more of the above materials may be laminated. When the substrate 110 is formed of a metal, it is possible to facilitate the emission of heat generated from the light emitting device, thereby improving the thermal stability of the light emitting device.

The substrate 110 may have a PSS (Patterned Substrate) structure on its upper surface in order to enhance light extraction efficiency, but the present invention is not limited thereto. The substrate 110 facilitates the emission of heat generated in the light emitting device 100, thereby improving the thermal stability of the light emitting device 100. The substrate 110 may have a layer which mitigates the difference in lattice constant between the first semiconductor layer 132 and the first semiconductor layer 132 due to a difference in lattice constant.

The first semiconductor layer 132 may be disposed on the substrate 110. The first semiconductor layer 132 may be disposed on a buffer layer (not shown) to match the lattice constant difference with the substrate 110, but is not limited thereto. Although the first semiconductor layer 132 may be grown on the substrate 110, the first semiconductor layer 132 is not limited to a horizontal type light emitting device and may be applied to a vertical type light emitting device.

The first semiconductor layer 132 may be formed of an n-type semiconductor layer. For example, when the light emitting device 100 emits blue light, the n-type semiconductor layer may be formed of, for example, In x Al y Ga 1-xy N (0 = x = 1, 0 = y = (AlN), AlGaN (Indium Gallium Nitride), InGaN (Indium Gallium Nitride), InN (Indium Nitride), InAlGaN , AlInN, and the like. The first semiconductor layer 132 may be doped with an n-type dopant such as, for example, silicon (Si), germanium (Ge), tin (Sn), selenium (Se) or tellurium (Te).

The first semiconductor layer 132 may be supplied with power from the outside. The first semiconductor layer 132 may provide electrons to the active layer 134.

The active layer 134 may be disposed on the first semiconductor layer 132. The active layer 134 may be disposed between the second semiconductor layer 136 and the first semiconductor layer 132.

The active layer 134 may be formed of a semiconductor material. The active layer 134 may be formed of a single or multi-well structure or the like using a compound semiconductor material of Group 3-V group elements. The active layer 134 may be formed of a nitride semiconductor. For example, the active layer 134 may include gallium nitride (GaN), indium gallium nitride (InGaN), and indium gallium nitride (InAlGaN).

When the active layer 134 emits blue light, for example, the active layer 134 has a composition formula of In x Al y Ga 1 -x- y N (0 = x = 1, 0 = y = 1, 0 = x + having a well layer (not shown), and in a Al b Ga 1 -a- b N (0 = a = 1, 0 = b = 1, 0 = a + b = 1) when the barrier layer (not shown having a composition formula of ), But is not limited thereto. The well layer (not shown) may be formed of a material having a band gap smaller than the band gap of the barrier layer (not shown).

The active layer 134 may be formed by alternately stacking a plurality of well layers (not shown) and a barrier layer (not shown). The active layer 134 may include a plurality of well layers (not shown) to maximize optical efficiency.

The well layer (not shown) may have a smaller energy bandgap than the barrier layer (not shown). The well layer (not shown) may have a smaller energy bandgap than the first semiconductor layer 132. The well layer (not shown) may have a continuous energy level of the carrier.

The second semiconductor layer 136 may be formed on the active layer 134. The second semiconductor layer 136 may be formed of a p-type semiconductor layer doped with a p-type dopant. When the light emitting device emits light of a blue wavelength, the second semiconductor layer 136 is formed of In x Al y Ga 1 -x- y N (0 = x = 1, 0 = y = 1, 0 = x + y (AlN), AlGaN (Indium Gallium Nitride), InGaN (indium gallium nitride), InN (indium nitride), InAlGaN, and AlInN And a p-type dopant such as magnesium (Mg), zinc (Zn), calcium (Ca), strontium (Sr), barium (Ba) or the like can be doped.

The first semiconductor layer 132, the active layer 134 and the second semiconductor layer 136 may be formed using a metal organic chemical vapor deposition (MOCVD) method, a chemical vapor deposition (CVD) method, a plasma May be formed by a method such as chemical vapor deposition (PECVD), molecular beam epitaxy (MBE), or hydride vapor phase epitaxy (HVPE) It is not limited.

The doping concentration of the conductive dopant in the first semiconductor layer 132 and the second semiconductor layer 136 may be uniform or non-uniform, but is not limited thereto.

When the light emitting device 100 is a horizontal type light emitting diode, the first electrode 140 may be disposed in one region of the first semiconductor layer 132. The first electrode 140 may be electrically connected to the first semiconductor layer 132. The first electrode 140 may transmit an external power source to the first semiconductor layer 132.

The second electrode 150 may be disposed in one region of the second semiconductor layer 136. The second electrode 150 may be electrically connected to the second semiconductor layer 136. The second electrode 150 may provide an external power source to the second semiconductor layer 136.

The first electrode 140 and the second electrode 150 may be formed of a conductive material such as indium, cobalt, silicon, germanium, gold, palladium, (Pt), ruthenium (Ru), rhenium (Re), magnesium (Mg), zinc (Zn), hafnium (Hf), tantalum (Ta), rhodium (Rh), iridium (Ir) (Ti), Ag, Cr, Mo, Nb, Al, Ni, Cu, and WTi. Metal, or alloy, but it is not limited thereto.

The first electrode 140 may include a first pad 142 connected to the first pad 142 and a first finger 144 connected to the first pad 142. The second electrode 150 may include a second finger 154 connected to the second pad 152 and the second pad 152.

The first finger 144 may extend a long distance from the first pad 142 toward the second pad 152. The second finger 154 may extend a long distance from the second pad 152 toward the first pad 142.

The second semiconductor layer 136 and the active layer 134 may be etched in one region. The first semiconductor layer 132 may expose the upper surface in the region where the second semiconductor layer 136 and the active layer 134 are etched. The first electrode 140 may be disposed on the upper surface of the first semiconductor layer 132 in a region where the second semiconductor layer 136 and the active layer 134 are etched.

The current blocking layer 170 may vertically overlap the transparent electrode layer 160. For example, the current blocking layer 170 may be disposed on the upper surface of the transparent electrode layer 136.

The current blocking layer 170 may be a plurality of layers. One or a plurality of current blocking layers 170 may be disposed under the second pads 152. The current blocking layer 170 may be disposed below the second finger 154.

The plurality of current blocking layers 170 may be spaced apart from each other below the second fingers 154. The plurality of current blocking layers 170 may be spaced a certain distance or at different distances.

The plurality of current blocking layers 170 may be distanced from each other as the distance from the second pad 152 to the intermediate point between the first pad 142 and the second pad 152 increases. As the plurality of current blocking layers 170 approach the midpoint between the first pad 142 and the second pad 152, the distances may be farther from each other.

The current may be concentrated in the first semiconductor layer 132 or the second semiconductor layer 136 as the first pad 142 or the second pad 152 approaches. The plurality of current blocking layers 170 are spaced apart from each other and closer to the first pad 142 or the second pad 152 as they approach the midpoint between the first pad 142 and the second pad 152 It is possible to prevent the current from being concentrated in the first semiconductor layer 132 or the second semiconductor layer 136.

The plurality of current blocking layers 170 may have a smaller volume as the distance from the second pad 152 to the intermediate point between the first pad 142 and the second pad 152 increases. As the plurality of current blocking layers 170 approach the midpoint between the first pad 142 and the second pad 152, the volume can be reduced.

The transparent electrode layer 160 may be disposed on the second semiconductor layer 136. The transparent electrode layer 160 may be connected to the second electrode 150. The transparent electrode layer 160 may have a current blocking layer 170 formed thereon. The transparent electrode layer 160 can be in ohmic contact with the second semiconductor layer 136.

The transparent electrode layer 160 may include one layer or a plurality of layers alternately stacked. The transparent electrode layer 160 may selectively include a light-transmitting conductive layer and a metal layer. The transparent electrode layer 160 can smoothly inject carriers into the second semiconductor layer 136. [

For example, the transparent electrode layer 160 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide indium gallium tin oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrO x , RuO x , RuO x / ITO, Ni, Ag, Ni / IrO x / Ni / IrO x / Au / ITO.

3 is a cross-sectional view showing a cross section of the light emitting device 100 of one embodiment.

Referring to FIG. 3, the current blocking layer 170 may include a plurality of dielectric layers 172 and 174.

The upper surface of the current blocking layer 170 may be circular, elliptical, or polygonal. The current blocking layer 170 may include a plurality of dielectric layers including a dielectric material stacked in pairs.

In view of the horizontal cross section, the area of the upper surface of the current blocking layer 170 may be 400 nm 2 to 100 μm 2 . If the area of the upper surface of the current layer 170 is less than 400 nm 2, the current layer 170 can not properly perform the current blocking function due to its small size, and it is difficult to improve the phenomenon that the current is locally attracted only to one region of the second semiconductor layer 136, If the area is larger than 100 mu m < 2 & gt ;, the second semiconductor layer 136 is too large to generate a portion where current is not properly supplied.

The current blocking layer 170 may include a dielectric material, and may have electrical insulation properties. The current blocking layer 170 has an insulating property so that the second electrode 150 can not supply current to the top surface of the transparent electrode layer 160 on which the current blocking layer 170 is disposed.

The current blocking layer 170 may comprise a plurality of different dielectric layers 172, 174. The current blocking layer 170 may include a first dielectric layer 172 and a second dielectric layer 174 that are stacked in pairs.

The current blocking layer 170 may include one pair to fifty pairs of the first dielectric layer 172 and the second dielectric layer 174. [ When the number of the first dielectric layer 172 and the number of the second dielectric layer 174 is 50 or more, the current blocking layer 170 may be excessively bulky and vulnerable to an external impact.

The first dielectric layer 172 may include silicon oxide (SiO2). The second dielectric layer 174 may comprise titanium oxide (TiO2) or tantalum oxide (Ta2O5). The current blocking layer 170 may have a reflectivity higher than that of the metal layer 176 at an incident angle close to the vertical direction.

The current blocking layer 170 may comprise a metal layer 176. The metal layer 176 may include a metal material. The metal layer 176 may include at least one or more metal materials. The metal layer 176 may comprise one metal material or a different metal material. The metal layer 176 may include at least one of silver (Ag), aluminum (Al), and silver-copper alloy (AgCu). The current blocking layer 170 can maximize the light reflectance by laminating a dielectric layer and a metal layer.

The current blocking layer 170 may have a thickness of 50 nm to 5 占 퐉. When the thickness of the current blocking layer 170 is less than 50 nm, the reflectance of the current blocking layer 170 may be too small due to the characteristic of increasing the reflectance using a dielectric, The light emitting device 100 may become too thick and the light emitting device 100 may be vulnerable to an external impact.

4A is a perspective view illustrating a light emitting device package 300 according to an exemplary embodiment of the present invention, and FIG. 4B is a cross-sectional view illustrating a light emitting device package 300 according to another exemplary embodiment.

4A and 4B, the light emitting device package 300 according to the embodiment includes a body 310 having a cavity, first and second electrodes 340 and 350 mounted on the body 310, first and second electrodes 340 and 350, A light emitting device 320 electrically connected to the two electrodes, and an encapsulant 330 formed in the cavity. The encapsulant 330 may include a phosphor (not shown).

The body 310 is made of a resin material such as polyphthalamide (PPA), silicon (Si), aluminum (Al), aluminum nitride (AlN), liquid crystal polymer (PSG), polyamide 9T ), new geo-isotactic polystyrene (SPS), metal materials, sapphire (Al 2 O 3), beryllium oxide (BeO), is a printed circuit board (PCB, printed circuit board), it may be formed of at least one of ceramic. The body 310 may be formed by injection molding, etching, or the like, but is not limited thereto.

The inner surface of the body 310 may be formed with an inclined surface. The reflection angle of the light emitted from the light emitting device 320 can be changed according to the angle of the inclined surface, and thus the directivity angle of the light emitted to the outside can be adjusted.

The shape of the cavity formed in the body 310 may be circular, square, polygonal, elliptical, or the like, and may have a curved shape, but the present invention is not limited thereto.

The encapsulant 330 may be filled in the cavity and may include a phosphor (not shown). The encapsulant 330 may be formed of transparent silicone, epoxy, and other resin materials. The encapsulant 330 may be formed in such a manner that the encapsulant 330 is filled in the cavity and then cured by ultraviolet rays or heat.

The phosphor (not shown) may be selected according to the wavelength of the light emitted from the light emitting device 320, so that the light emitting device package 300 can realize white light.

The fluorescent material (not shown) included in the encapsulant 330 may be a blue light emitting phosphor, a blue light emitting fluorescent material, a green light emitting fluorescent material, a yellow green light emitting fluorescent material, a yellow light emitting fluorescent material, Fluorescent material, orange light-emitting fluorescent material, and red light-emitting fluorescent material may be applied.

The phosphor (not shown) may be excited by the light having the first light emitted from the light emitting device 320 to generate the second light. For example, when the light emitting element 320 is a blue light emitting diode and the phosphor (not shown) is a yellow phosphor, the yellow phosphor may be excited by blue light to emit yellow light, As the yellow light generated by excitation by blue light is mixed, the light emitting device package 300 can provide white light.

When the light emitting element 320 is a green light emitting diode, the magenta phosphor or the blue and red phosphors (not shown) are mixed. When the light emitting element 320 is a red light emitting diode, a cyan phosphor or a mixture of blue and green phosphors For example.

The phosphor (not shown) may be a known one such as YAG, TAG, sulfide, silicate, aluminate, nitride, carbide, nitridosilicate, borate, fluoride or phosphate.

The first electrode 340 and the second electrode 350 may be mounted on the body 310. The first electrode 340 and the second electrode 350 may be electrically connected to the light emitting device 320 to supply power to the light emitting device 320.

The first electrode 340 and the second electrode 350 are electrically separated from each other and reflect light generated from the light emitting device 320 to increase light efficiency. The first electrode 340 and the second electrode 350 may discharge heat generated from the light emitting device 320 to the outside.

The light emitting device 320 and the first electrode 340 and the second electrode 350 may be formed by wire bonding or the like, ) Method, a flip chip method, or a die bonding method.

The first electrode 340 and the second electrode 350 may be formed of a metal material such as titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum ), Platinum (Pt), tin (Sn), silver (Ag), phosphorous (P), aluminum (Al), indium (In), palladium (Pd), cobalt ), Hafnium (Hf), ruthenium (Ru), and iron (Fe). The first electrode 340 and the second electrode 350 may have a single-layer structure or a multi-layer structure, but the present invention is not limited thereto.

The light emitting device 320 is mounted on the first electrode 340 and may be a light emitting device that emits light such as red, green, blue, or white, or a UV (Ultra Violet) However, the present invention is not limited thereto. One or more light emitting elements 320 may be mounted.

The light emitting device 320 is applicable to both a horizontal type whose electrical terminals are all formed on the upper surface, a vertical type formed on the upper and lower surfaces, or a flip chip.

The light emitting device package 300 may include a light emitting device.

A light guide plate, a prism sheet, a diffusion sheet, and the like, which are optical members, may be disposed on a light path of the light emitting device package 300.

The light emitting device package 300, the substrate, and the optical member may function as a light unit. Another embodiment may be implemented as a display device, an indicating device, a lighting system including a light emitting device (not shown) or a light emitting device package 300, for example, the lighting system may include a lamp, a streetlight .

FIG. 5A is a perspective view showing an illumination system 400 including a light emitting device according to an embodiment, and FIG. 5B is a cross-sectional view showing a D-D 'cross-section of the illumination system of FIG. 5A.

5B is a cross-sectional view of the illumination system 400 of FIG. 5A cut in the longitudinal direction Z and the height direction X and viewed in the horizontal direction Y. FIG.

5A and 5B, the lighting system 400 may include a body 410, a cover 430 coupled to the body 410, and a finishing cap 450 positioned at opposite ends of the body 410 have.

The light emitting device module 443 is coupled to a lower surface of the body 410. The body 410 is electrically connected to the light emitting device package 444 through the upper surface of the body 410, And may be formed of a metal material having excellent heat dissipation effect, but is not limited thereto.

The light emitting device package 444 includes a light emitting element (not shown).

The light emitting device package 444 may be mounted on the substrate 442 in a multi-color, multi-row manner to form a module. The light emitting device package 444 may be mounted at equal intervals or may be mounted with various spacings as needed. As the substrate 442, MCPCB (Metal Core PCB) or FR4 PCB can be used.

The cover 430 may be formed in a circular shape so as to surround the lower surface of the body 410, but is not limited thereto.

The cover 430 can protect the internal light emitting element module 443 from foreign substances or the like. The cover 430 may include diffusion particles to prevent glare of light generated in the light emitting device package 444 and uniformly emit light to the outside, and may include at least one of an inner surface and an outer surface of the cover 430 A prism pattern or the like may be formed on the surface. Further, the phosphor may be coated on at least one of the inner surface and the outer surface of the cover 430.

The light generated from the light emitting device package 444 is emitted to the outside through the cover 430 so that the cover 430 should have excellent light transmittance and sufficient heat resistance to withstand the heat generated from the light emitting device package 444 The cover 430 may be made of a material including polyethylene terephthalate (PET), polycarbonate (PC), polymethyl methacrylate (PMMA), or the like .

The finishing cap 450 is located at both ends of the body 410 and can be used for sealing the power supply unit (not shown). The finishing cap 450 is formed with the power pin 452, so that the lighting system 400 according to the embodiment can be used immediately without a separate device on the terminal from which the conventional fluorescent lamp is removed.

6 is an exploded perspective view of a liquid crystal display device including a light emitting device according to an embodiment.

6, the liquid crystal display device 500 may include a backlight unit 570 for providing light to the liquid crystal display panel 510 and the liquid crystal display panel 510 in an edge-light manner.

The liquid crystal display panel 510 can display an image using the light provided from the backlight unit 570. The liquid crystal display panel 510 may include a color filter substrate 512 and a thin film transistor substrate 514 facing each other with a liquid crystal therebetween.

The color filter substrate 512 can realize the color of an image to be displayed through the liquid crystal display panel 510.

The thin film transistor substrate 514 is electrically connected to a printed circuit board 518 on which a plurality of circuit components are mounted via a driving film 517. The thin film transistor substrate 514 may apply a driving voltage provided from the printed circuit board 518 to the liquid crystal in response to a driving signal provided from the printed circuit board 518. [

The thin film transistor substrate 514 may include a thin film transistor and a pixel electrode formed as a thin film on another substrate of a transparent material such as glass or plastic.

The backlight unit 570 includes a light emitting device module 520 for outputting light, a light guide plate 530 for changing the light provided from the light emitting module 520 into a surface light source to provide the light to the liquid crystal display panel 510, A plurality of films 550, 560, and 564 that uniformly distribute the luminance of light provided from the light guide plate 530 and improve vertical incidence, and a reflective sheet (not shown) that reflects light emitted to the rear of the light guide plate 530 to the light guide plate 530 540).

The light emitting device module 520 may include a PCB substrate 522 to mount a plurality of light emitting device packages 524 and a plurality of light emitting device packages 524 to form a module.

The light emitting device package 524 includes a light emitting element (not shown).

The backlight unit 570 includes a diffusion film 566 for diffusing light incident from the light guide plate 530 toward the liquid crystal display panel 510 and a prism film 550 for enhancing vertical incidence by condensing the diffused light And may include a protective film 564 for protecting the prism film 550.

7 is an exploded perspective view of a liquid crystal display device including a light emitting device according to an embodiment. However, the parts shown and described in Fig. 6 are not repeatedly described in detail.

7 is a direct-view liquid crystal display device 600 according to the embodiment. The liquid crystal display device 600 may include a liquid crystal display panel 610 and a backlight unit 670 for providing light to the liquid crystal display panel 610. Since the liquid crystal display panel 610 is the same as that described with reference to FIG. 6, detailed description is omitted.

The backlight unit 670 includes a plurality of light emitting element modules 623, a reflective sheet 624, a lower chassis 630 in which the light emitting element module 623 and the reflective sheet 624 are accommodated, And a plurality of optical films 660 disposed on the diffuser plate 640.

The light emitting device module 623 may include a PCB substrate 621 to mount a plurality of light emitting device packages 622 and a plurality of light emitting device packages 622 to form a module.

The light emitting device package 622 includes a light emitting element (not shown).

The reflective sheet 624 reflects light generated from the light emitting device package 622 in a direction in which the liquid crystal display panel 610 is positioned, thereby improving light utilization efficiency.

The light emitted from the light emitting element module 623 is incident on the diffusion plate 640 and the optical film 660 is disposed on the diffusion plate 640. The optical film 660 is composed of a diffusion film 666, a prism film 650, and a protective film 664.

The configuration and the method of the embodiments described above are not limitedly applied, but the embodiments may be modified so that all or some of the embodiments are selectively combined so that various modifications can be made. .

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It should be understood that various modifications may be made by those skilled in the art without departing from the spirit and scope of the present invention.

100: Light emitting element
110: substrate
132: first semiconductor layer
134: active layer
136: second semiconductor layer
140: first electrode
150: second electrode
160: transparent electrode layer
170: current blocking layer

Claims (12)

Board;
A light emitting structure disposed on the substrate and including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer;
A transparent electrode layer disposed on the second semiconductor layer;
A second electrode disposed on the transparent electrode layer, the second electrode including a second pad and a second finger connected to the second pad; And
And a current blocking layer disposed between the transparent electrode layer and the second pad and including a dielectric material,
Wherein the current blocking layers are a plurality of current blocking layers, and the plurality of current blocking layers are disposed apart from each other below the second fingers. The method according to claim 1,
Wherein the plurality of current blocking layers are spaced apart from each other by a predetermined distance. The method according to claim 1,
Wherein the plurality of current blocking layers are spaced apart from each other as the distance from the second pad is increased. The method according to claim 1,
Wherein the current blocking layer comprises a first dielectric layer and a second dielectric layer stacked in pairs. 5. The method of claim 4,
Wherein the first dielectric layer comprises silicon oxide (SiO2). The method of claim 5, wherein
Wherein the second dielectric layer comprises titanium oxide (TiO2) or tantalum oxide (Ta2O5). The method according to claim 1,
Wherein the upper surface of the current blocking layer is circular, elliptical or polygonal. The method according to claim 1,
Wherein the current blocking layer comprises a metal layer including a metal material on a top portion thereof. 9. The method of claim 8,
Wherein the metal layer comprises aluminum (Al) or silver (Ag). The method according to claim 1,
Wherein the plurality of current blocking layers have a smaller volume as the distance from the second pad increases. The method according to claim 1,
And a first electrode disposed on the first semiconductor layer and including a first pad and a first finger coupled to the first pad,
Wherein the plurality of current blocking layers are spaced apart from each other closer to a midpoint between the first pad and the second pad. A light emitting device package comprising the light emitting device according to any one of claims 1 to 11.
KR1020130009467A 2013-01-28 2013-01-28 Light emitting device KR20140097603A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107610602A (en) * 2016-07-11 2018-01-19 三星显示有限公司 Dot structure, display device and the method for manufacturing the dot structure
CN107768400A (en) * 2016-08-19 2018-03-06 京东方科技集团股份有限公司 A kind of illumination panel and lighting device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107610602A (en) * 2016-07-11 2018-01-19 三星显示有限公司 Dot structure, display device and the method for manufacturing the dot structure
US10818647B2 (en) 2016-07-11 2020-10-27 Samsung Display Co., Ltd. Pixel structure, display apparatus including the pixel structure, and method of manufacturing the pixel structure
CN107610602B (en) * 2016-07-11 2021-06-25 三星显示有限公司 Pixel structure, display device and method for manufacturing pixel structure
US11462526B2 (en) 2016-07-11 2022-10-04 Samsung Display Co., Ltd. Pixel structure with improved alignment, and display apparatus including the pixel structure
CN107768400A (en) * 2016-08-19 2018-03-06 京东方科技集团股份有限公司 A kind of illumination panel and lighting device

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