KR102042236B1 - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
KR102042236B1
KR102042236B1 KR1020130009469A KR20130009469A KR102042236B1 KR 102042236 B1 KR102042236 B1 KR 102042236B1 KR 1020130009469 A KR1020130009469 A KR 1020130009469A KR 20130009469 A KR20130009469 A KR 20130009469A KR 102042236 B1 KR102042236 B1 KR 102042236B1
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South Korea
Prior art keywords
layer
light emitting
semiconductor layer
emitting device
pad
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KR1020130009469A
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Korean (ko)
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KR20140097604A (en
Inventor
나민규
홍기석
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엘지이노텍 주식회사
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Priority to KR1020130009469A priority Critical patent/KR102042236B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

A light emitting device according to an embodiment of the present invention includes a substrate; A light emitting structure on the substrate, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; A transparent electrode layer disposed on the second semiconductor layer; A first electrode disposed on the first semiconductor layer, the first electrode including a first pad and a first finger connected to the first pad; A second electrode disposed on the transparent electrode layer, the second electrode including a second pad and a second finger connected to the second pad; A horizontally overlapping transparent electrode layer and vertically overlapping the second semiconductor layer, the reflective layer including a plurality of dielectric layers, the plurality of reflective layers forming a pattern, between the first pad and the second finger; Is placed on.

Description

Light emitting device and light emitting device package including the same

Embodiments relate to a light emitting device and a light emitting device package including the same.

Light Emitting Diode (LED) is a device that converts an electric signal into a light form using the characteristics of a compound semiconductor, and is used for home appliances, remote controllers, electronic displays, indicators, and various automation devices. There is a trend.

When a forward voltage is applied, n-layer electrons and p-layer holes combine to emit energy corresponding to an energy gap between a conduction band and a valence band. It is mainly emitted in the form of heat or light, and when emitted in the form of light, it becomes an LED.

Nitride semiconductors are receiving great attention in the field of optical devices and high power electronic devices due to their high thermal stability and wide bandgap energy. In particular, blue light emitting devices, green light emitting devices, and ultraviolet light emitting devices using nitride semiconductors are commercially used and widely used.

In order to increase the light efficiency of the light emitting device, it is important to supply current evenly to the semiconductor layer. It is necessary to improve the coupling or light efficiency deterioration caused by dense current only in the region close to the electrode.

The light emitting device package fabricates a light emitting device on a substrate, separates the light emitting device chip through a die separation, which is a sawing process, and then die bonds the light emitting device chip to a package body. After the wire bonding (molding), molding (molding) can proceed to the test.

An embodiment of the present invention provides a light emitting device having a high light efficiency by disposing a reflective layer including a dielectric between a transparent electrode layer and a semiconductor layer, thereby improving a problem of locally concentrating current.

A light emitting device according to an embodiment of the present invention includes a substrate; A light emitting structure on the substrate, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; A transparent electrode layer disposed on the second semiconductor layer; A first electrode disposed on the first semiconductor layer, the first electrode including a first pad and a first finger connected to the first pad; A second electrode disposed on the transparent electrode layer, the second electrode including a second pad and a second finger connected to the second pad; A horizontally overlapping transparent electrode layer and vertically overlapping the second semiconductor layer, the reflective layer including a plurality of dielectric layers, the plurality of reflective layers forming a pattern, between the first pad and the second finger; Is placed on.

The light emitting device and the light emitting device package of various embodiments of the present invention have one or more of the following effects.

The light emitting device according to the embodiment may include a reflective layer between the transparent electrode layer and the second semiconductor layer to emit light that is absorbed and lost in the lower portion of the substrate to the outside, thereby improving light extraction efficiency.

The light emitting device according to the embodiment may include a reflective layer including a dielectric between the transparent electrode layer and the second semiconductor layer, thereby minimizing supply of current to the second semiconductor layer only in a region close to the electrode pad.

In the light emitting device according to the embodiment, the reflective layer stacks the dielectric layer and the metal layer, thereby minimizing the amount of light absorbed by the reflective layer.

A light emitting device according to an embodiment may maximize the reflectance of light incident vertically by stacking a plurality of dielectric layers.

1 is a cross-sectional view showing a cross section of a light emitting device according to one embodiment;
2 is a top view illustrating a top surface of a light emitting device according to an embodiment;
3 to 4 are cross-sectional views showing a cross section of a light emitting device according to one embodiment;
5A and 5B are a perspective view and a cross-sectional view of a light emitting device package including another light emitting device according to one embodiment;
6A is a perspective view illustrating a lighting device including a light emitting device package according to an embodiment;
6B is a cross-sectional view of a lighting apparatus including a light emitting device package according to an embodiment;
7 is a conceptual view illustrating a liquid crystal display device including a light emitting device package according to an embodiment;
8 is a conceptual diagram illustrating a liquid crystal display device including the light emitting device package according to the embodiment.

Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described below in detail with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms, and only the embodiments make the disclosure of the present invention complete, and the general knowledge in the art to which the present invention belongs. It is provided to fully inform the person having the scope of the invention, which is defined only by the scope of the claims. Like reference numerals refer to like elements throughout.

The spatially relative terms " below ", " beneath ", " lower ", " above ", " upper " It may be used to easily describe the correlation of a device or components with other devices or components. Spatially relative terms are to be understood as including terms in different directions of the device in use or operation in addition to the directions shown in the figures. For example, when flipping a device shown in the figure, a device described as "below" or "beneath" of another device may be placed "above" of another device. Thus, the exemplary term "below" can encompass both an orientation of above and below. The device can also be oriented in other directions, so that spatially relative terms can be interpreted according to orientation.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In this specification, the singular also includes the plural unless specifically stated otherwise in the phrase. As used herein, “comprises” and / or “comprising” refers to the presence of one or more other components, steps, operations and / or elements. Or does not exclude additions.

Unless otherwise defined, all terms (including technical and scientific terms) used in the present specification may be used in a sense that can be commonly understood by those skilled in the art. In addition, the terms defined in the commonly used dictionaries are not ideally or excessively interpreted unless they are specifically defined clearly.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size and area of each component does not necessarily reflect the actual size or area.

In addition, the angle and direction mentioned in the process of describing the structure of the light emitting device in the embodiment are based on those described in the drawings. In the description of the structure constituting the light emitting device in the specification, if the reference point and the positional relationship with respect to the angle is not clearly mentioned, reference is made to related drawings.

Hereinafter, exemplary embodiments will be described in more detail with reference to the accompanying drawings.

1 is a cross-sectional view showing a cross-section of a light emitting device according to an embodiment, Figure 2 is a top view showing a top surface of the light emitting device according to an embodiment.

1 and 2, a light emitting device 100 according to an embodiment is disposed on a substrate 110, a substrate 110, a first semiconductor layer 132, a second semiconductor layer 136, and The light emitting structure 130 including the active layer 134 disposed between the first semiconductor layer 132 and the second semiconductor layer 136, and the transparent electrode layer 160 disposed on the second semiconductor layer 136. The first electrode 140 and the transparent electrode layer 160 are disposed on the semiconductor layer 132 and include the first pad 142 and the first finger 144 connected to the first pad 142. And horizontally overlap the second electrode 150 and the transparent electrode layer 160 including the second pad 152 and the second finger 154 connected to the second pad 152, and the second semiconductor layer. Disposed to vertically overlap 136 and including a reflective layer 170 including a plurality of dielectric layers, the reflective layer 170 forming a plurality of patterns, and including a first pad 142 and a second finger 154. It can be arranged between.

The substrate 110 may be disposed under the first semiconductor layer 132. The substrate 110 may support the first semiconductor layer 132. The substrate 110 may receive heat from the first semiconductor layer 132. The substrate 110 may have a light transmissive property. For example, the substrate 110 may include sapphire (Al 2 O 3), but is not limited thereto. The substrate 110 may have a light transmissive property when using a light transmissive material or formed below a predetermined thickness, but is not limited thereto. The refractive index of the substrate 110 is preferably smaller than the refractive index of the first semiconductor layer 132 for light extraction efficiency, but is not limited thereto.

The substrate 110 may be formed of a semiconductor material according to an embodiment, for example, silicon (Si), germanium (Ge), gallium arsenide (GaAs), zinc oxide (ZnO), silicon carbide (SiC), It may be implemented as a carrier wafer such as silicon germanium (SiGe), gallium nitride (GaN), gallium (III) oxide (Ga 2 O 3 ).

The substrate 110 may be formed of a conductive material. According to the embodiment, the metal may be formed of, for example, gold (Au), nickel (Ni), tungsten (W), molybdenum (Mo), copper (Cu), aluminum (Al), tantalum (Ta), or silver. It may be formed of any one selected from (Ag), platinum (Pt), chromium (Cr) or formed of two or more alloys, and may be formed by stacking two or more of the above materials. When the substrate 110 is formed of a metal, the thermal stability of the light emitting device may be improved by facilitating the emission of heat generated from the light emitting device.

The substrate 110 may include a patterned substrate (PSS) structure on an upper surface thereof to increase light extraction efficiency, but is not limited thereto. The substrate 110 may improve the thermal stability of the light emitting device 100 by facilitating the emission of heat generated from the light emitting device 100. The substrate 110 may include a layer in which a difference between the first semiconductor layer 132 and the lattice constant exists so as to alleviate the lattice constant difference between the first semiconductor layer 132 and the first semiconductor layer 132.

The first semiconductor layer 132 may be disposed on the substrate 110. The first semiconductor layer 132 may be disposed on a buffer layer (not shown) to match the difference in lattice constant with the substrate 110, but is not limited thereto. The first semiconductor layer 132 may be grown on the substrate 110, but is not limited to the horizontal light emitting device but may be applied to the vertical light emitting device.

The first semiconductor layer 132 may be implemented as an n-type semiconductor layer. For example, when the light emitting device 100 emits light having a blue wavelength, the n-type semiconductor layer may be, for example, In x Al y Ga 1-xy N (0 = x = 1, 0 = y = 1, 0 a semiconductor material having a composition formula of = x + y = 1), for example, gallium nitride (GaN), aluminum nitride (AlN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), indium nitride (InNN), and InAlGaN , AlInN and the like. For example, the first semiconductor layer 132 may be doped with n-type dopants such as silicon (Si), germanium (Ge), tin (Sn), selenium (Se), and tellurium (Te).

The first semiconductor layer 132 may receive power from the outside. The first semiconductor layer 132 may provide electrons to the active layer 134.

The active layer 134 may be disposed on the first semiconductor layer 132. The active layer 134 may be disposed between the second semiconductor layer 136 and the first semiconductor layer 132.

The active layer 134 may be formed of a semiconductor material. The active layer 134 may be formed in a single or multiple well structure using a compound semiconductor material of Group III-Group 5 elements. The active layer 134 may be formed of a nitride semiconductor. For example, the active layer 134 may include gallium nitride (GaN), indium gallium nitride (InGaN), indium gallium nitride (InAlGaN), or the like.

An active layer 134 that emits light when the blue light, for example, a compositional formula of In x Al y Ga 1 -x- y N (0 = x = 1, 0 = y = 1, 0 = x + y = 1) Barrier layer (not shown) having a composition formula of a well layer (not shown) having a structure and In a Al b Ga 1 -a- b N (0 = a = 1, 0 = b = 1, 0 = a + b = 1) It may have a single or multiple well structure having), but is not limited thereto. The well layer (not shown) may be formed of a material having a band gap smaller than the band gap of the barrier layer (not shown).

The active layer 134 may be formed by alternately stacking a plurality of well layers (not shown) and a barrier layer (not shown). The active layer 134 may include a plurality of well layers (not shown) to maximize light efficiency.

The well layer (not shown) may have a smaller energy band gap than the barrier layer (not shown). The well layer (not shown) may have a smaller energy band gap than the first semiconductor layer 132. The well layer (not shown) may have a continuous energy level of carrier.

The second semiconductor layer 136 may be formed on the active layer 134. The second semiconductor layer 136 may be implemented as a p-type semiconductor layer doped with a p-type dopant. When the light emitting element emitting light of a blue wavelength, a second semiconductor layer 136 is In x Al y Ga 1 -x- y N (0 = x = 1, 0 = y = 1, 0 = x + y Semiconductor material having a composition formula of = 1), for example, selected from gallium nitride (GaN), aluminum nitride (AlN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), indium nitride (InNN), InAlGaN, AlInN, and the like. P-type dopants such as magnesium (Mg), zinc (Zn), calcium (Ca), strontium (Sr), and barium (Ba) may be doped.

The first semiconductor layer 132, the active layer 134, and the second semiconductor layer 136 may be formed of, for example, metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), or plasma. Plasma-Enhanced Chemical Vapor Deposition (PECVD), Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), etc. It is not limited.

The doping concentrations of the conductive dopants in the first semiconductor layer 132 and the second semiconductor layer 136 may be formed uniformly or non-uniformly, but are not limited thereto.

When the light emitting device 100 is a horizontal light emitting diode, the first electrode 140 may be disposed in one region of the first semiconductor layer 132. The first electrode 140 may be electrically connected to the first semiconductor layer 132. The first electrode 140 may transfer power connected from the outside to the first semiconductor layer 132.

The second electrode 150 may be disposed in one region of the second semiconductor layer 136. The second electrode 150 may be electrically connected to the second semiconductor layer 136. The second electrode 150 may provide power to the second semiconductor layer 136 provided from the outside.

The first electrode 140 and the second electrode 150 are conductive materials such as indium (In), cobalt (Co), silicon (Si), germanium (Ge), gold (Au), palladium (Pd), Platinum (Pt), Ruthenium (Ru), Rhenium (Re), Magnesium (Mg), Zinc (Zn), Hafnium (Hf), Tantalum (Ta), Rhodium (Rh), Iridium (Ir), Tungsten (W), Selected from titanium (Ti), silver (Ag), chromium (Cr), molybdenum (Mo), niobium (Nb), aluminum (Al), nickel (Ni), copper (Cu), and titanium tungsten alloy (WTi) It may be formed as a single layer or multiple layers using a metal or an alloy, but is not limited thereto.

The first electrode 140 may include a first pad 142 and a first finger 144 connected to the first pad 142. The second electrode 150 may include a second pad 152 and a second finger 154 connected to the second pad 152.

The first finger 144 may extend in a direction approaching the second pad 152 from the first pad 142. The second finger 154 may extend in a direction toward the first pad 142 from the second pad 152.

One region of the second semiconductor layer 136 and the active layer 134 may be etched. An upper surface of the first semiconductor layer 132 may be exposed in a region where the second semiconductor layer 136 and the active layer 134 are etched. The first electrode 140 may be disposed on an upper surface of the first semiconductor layer 132 in a region where the second semiconductor layer 136 and the active layer 134 are etched.

The reflective layer 170 may horizontally overlap the transparent electrode layer 160. The reflective layer 170 may vertically overlap the second semiconductor layer 136. For example, the reflective layer 170 may be disposed on the top surface of the second semiconductor layer 136.

The upper surface of the reflective layer 170 may be circular or polygonal. The reflective layer 170 may include a plurality of dielectric layers. The reflective layer 170 may include a plurality of dielectric layers including a dielectric material stacked in pairs.

The reflective layer 170 may include a dielectric material and may have electrical insulation. The reflective layer 170 may be insulative to prevent the transparent electrode layer 160 from supplying electricity to the upper surface of the second semiconductor layer 136 on which the reflective layer 170 is disposed.

There may be a plurality of reflective layers 170. The plurality of reflective layers 170 may be disposed to be adjacent to the first pad 142 or the second pad 152. The reflective layer 170 may be disposed between the first pad 142 and the second finger 154. The reflective layer 170 may be disposed between the second pad 152 and the first finger 144.

The plurality of reflective layers 170 may be formed by forming a group so as to be adjacent to the side surface of the first pad 142. The plurality of reflective layers 170 may be formed by forming a group so as to be adjacent to the side surface of the second pad 152.

The reflective layer 170 may have a thickness of 50 nm to 5 μm. If the thickness of the reflective layer 170 is less than 50 nm, the light transmits due to the property of increasing the reflectance by using a dielectric material, the reflectance may be too small, and the reflective layer 170 is too thick when the thickness is greater than 5 μm. As a result, the light emitting device 100 may be vulnerable to external shock.

An area of the upper surface of the reflective layer 170 may be 400 nm 2 to 100 μm 2 . The reflective layer 170 may be circular, oval or polygonal in shape. The reflective layer 170 may have the same upper and lower surfaces.

When the area of the upper surface of the reflective layer 170 is less than 400 nm 2 , the size of the reflective layer 170 is too small to properly perform a current interruption function, and thus it is difficult to improve a phenomenon in which current is concentrated only in one region of the second semiconductor layer 136. When the size is larger than 100 µm 2 , the size is too large, resulting in a portion in which the current is not properly supplied to the second semiconductor layer 136.

The transparent electrode layer 160 may be disposed to horizontally overlap the reflective layer 170. The transparent electrode layer 160 may be disposed between the second electrode 150 and the second semiconductor layer. The transparent electrode layer 160 may be in ohmic contact with the second semiconductor layer 136. The transparent electrode layer 160 may include one layer or a plurality of layers that are alternately stacked. The transparent electrode layer 160 may optionally include a light transmissive conductive layer and a metal layer. The transparent electrode layer 160 can smoothly inject the carrier into the second semiconductor layer 136.

For example, the transparent electrode layer 160 may include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and IGTO (IGTO). indium gallium tin oxide (AZO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrO x , RuO x , RuO x / ITO, Ni, Ag, Ni / IrO x / Au, and One or more of Ni / IrO x / Au / ITO can be used to implement a single layer or multiple layers.

3 to 4 are cross-sectional views showing a cross section of a light emitting device according to an embodiment.

Referring to FIG. 3, the reflective layer 170 may include a plurality of dielectric layers 172 and 174.

The reflective layer 170 may include a plurality of different dielectric layers 172 and 174. The reflective layer 170 may include a first dielectric layer 172 and a second dielectric layer 174 stacked in pairs.

The reflective layer 170 may include one to fifty pairs of the first dielectric layer 172 and the second dielectric layer 174. When the first dielectric layer 172 and the second dielectric layer 174 are 50 pairs or more, the reflective layer 170 may become excessively large in volume and become vulnerable to external shock.

The first dielectric layer 172 may include silicon oxide (SiO 2). The second dielectric layer 174 may include titanium oxide (TiO 2) or tantalum oxide (Ta 2 O 5). The reflective layer 170 may have a higher reflectance of light incident at an angle of incidence close to vertical than that of the metal layer 176.

The reflective layer 170 may include a metal layer 176. The metal layer 176 may include a metal material. The metal layer 176 may include a plurality of metal materials. The metal layer 176 may include different metal materials. The metal layer 176 may include silver (Ag), aluminum (Al), or silver-copper alloy (AgCu). The reflective layer 170 may stack a dielectric layer and a metal layer to maximize light reflectance.

Referring to FIG. 4, the transparent electrode layer 160 may vertically overlap with the reflective layer 170. The transparent electrode layer 160 may be disposed on the reflective layer 170. The transparent electrode layer 160 may extend from the upper surface of the second semiconductor layer 136 to the upper portion of the reflective layer 170.

The transparent electrode layer 160 is formed to surround the upper portion of the reflective layer 170, thereby protecting the reflective layer 170 from external foreign matters or impacts. The transparent electrode layer 160 extends over the reflective layer 170 to easily supply current to the entire surface of the second semiconductor layer 136.

5A is a perspective view illustrating a light emitting device package 300 according to an embodiment of the present invention, and FIG. 5B is a cross-sectional view illustrating a cross section of the light emitting device package 300 according to another embodiment.

5A and 5B, the light emitting device package 300 according to the embodiment includes a body 310 having a cavity formed therein, and first and second electrodes 340 and 350 mounted on the body 310. The light emitting device 320 electrically connected to the two electrodes and the encapsulant 330 formed in the cavity may be included, and the encapsulant 330 may include a phosphor (not shown).

The body 310 is made of a resin material such as polyphthalamide (PPA), silicon (Si), aluminum (Al), aluminum nitride (AlN), photosensitive glass (PSG), polyamide 9T (PA9T) ), Neo geotactic polystyrene (SPS), a metal material, sapphire (Al 2 O 3 ), beryllium oxide (BeO), a printed circuit board (PCB, Printed Circuit Board) may be formed of at least one. The body 310 may be formed by injection molding, etching, or the like, but is not limited thereto.

The inner surface of the body 310 may be formed inclined surface. The reflection angle of the light emitted from the light emitting device 320 may vary according to the angle of the inclined surface, and thus the directivity angle of the light emitted to the outside may be adjusted.

The shape of the cavity formed in the body 310 as viewed from above may be circular, rectangular, polygonal, elliptical, or the like, and in particular, may have a curved shape, but is not limited thereto.

The encapsulant 330 may be filled in the cavity, and may include a phosphor (not shown). The encapsulant 330 may be formed of transparent silicone, epoxy, and other resin materials. After the encapsulant 330 is filled in the cavity, the encapsulant 330 may be formed by UV or thermal curing.

The phosphor (not shown) may be selected according to the wavelength of the light emitted from the light emitting device 320 to allow the light emitting device package 300 to realize white light.

The phosphor (not shown) included in the encapsulant 330 may be a blue light emitting phosphor, a cyan light emitting phosphor, a green light emitting phosphor, a yellow green light emitting phosphor, a yellow light emitting phosphor, or a yellowish red light according to a wavelength of light emitted from the light emitting device 320. One of the phosphor, the orange luminescent phosphor, and the red luminescent phosphor can be applied.

The phosphor (not shown) may be excited by the light having the first light emitted from the light emitting device 320 to generate the second light. For example, when the light emitting device 320 is a blue light emitting diode and the phosphor (not shown) is a yellow phosphor, the yellow phosphor may be excited by blue light to emit yellow light, and the blue light generated from the blue light emitting diode and As yellow light generated by excitation by blue light is mixed, the light emitting device package 300 may provide white light.

When the light emitting device 320 is a green light emitting diode, a magenta phosphor or a blue and red phosphor (not shown) is mixed. When the light emitting device 320 is a red light emitting diode, a cyan phosphor or a blue and green phosphor is mixed. For example,

The phosphor (not shown) may be a known one such as YAG, TAG, sulfide, silicate, aluminate, nitride, carbide, nitridosilicate, borate, fluoride, phosphate, and the like.

The first electrode 340 and the second electrode 350 may be mounted on the body 310. The first electrode 340 and the second electrode 350 may be electrically connected to the light emitting device 320 to supply power to the light emitting device 320.

The first electrode 340 and the second electrode 350 are electrically separated from each other, and may reflect light generated from the light emitting device 320 to increase light efficiency. The first electrode 340 and the second electrode 350 may discharge heat generated from the light emitting device 320 to the outside.

In FIG. 5B, the light emitting device 320 is mounted on the first electrode 340, but is not limited thereto. The light emitting device 320, the first electrode 340, and the second electrode 350 may be wire bonded. May be electrically connected by any one of the following methods, a flip chip method, and a die bonding method.

The first electrode 340 and the second electrode 350 are made of a metal material, for example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), and tantalum (Ta). ), Platinum (Pt), tin (Sn), silver (Ag), phosphorus (P), aluminum (Al), indium (In), palladium (Pd), cobalt (Co), silicon (Si), germanium (Ge) ), Hafnium (Hf), ruthenium (Ru), iron (Fe) may include one or more materials or alloys. The first electrode 340 and the second electrode 350 may be formed to have a single layer or a multilayer structure, but is not limited thereto.

The light emitting device 320 may be mounted on the first electrode 340, and may be, for example, a light emitting device emitting light of red, green, blue, white, or UV (ultraviolet) light emitting device emitting ultraviolet light. However, the present invention is not limited thereto. One or more light emitting devices 320 may be mounted.

The light emitting device 320 may be applied to a horizontal type in which all of its electrical terminals are formed on the upper surface, or to a vertical type or flip chip formed on the upper and lower surfaces.

The light emitting device package 300 may include a light emitting device.

A plurality of light emitting device packages 300 according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, may be disposed on an optical path of the light emitting device package 300.

The light emitting device package 300, the substrate, and the optical member may function as a light unit. Another embodiment may be implemented as a display device, an indicator device, or a lighting system including a light emitting device (not shown) or a light emitting device package 300. For example, the lighting system may include a lamp or a street lamp. .

6A is a perspective view illustrating a lighting system 400 including a light emitting device according to an embodiment, and FIG. 6B is a cross-sectional view illustrating a cross-sectional view taken along line D-D 'of the lighting system of FIG. 6A.

That is, FIG. 6B is a cross-sectional view of the illumination system 400 of FIG. 6A cut in the plane of the longitudinal direction Z and the height direction X, and viewed in the horizontal direction Y. FIG.

6A and 6B, the lighting system 400 may include a body 410, a cover 430 coupled to the body 410, and a closing cap 450 positioned at both ends of the body 410. have.

The lower surface of the body 410 is fastened to the light emitting device module 443, the body 410 is conductive and so that the heat generated from the light emitting device package 444 can be discharged to the outside through the upper surface of the body 410 The heat dissipation effect may be formed of an excellent metal material, but is not limited thereto.

The light emitting device package 444 includes a light emitting device (not shown).

The light emitting device package 444 may be mounted on the substrate 442 in multiple colors and in multiple rows to form a module. The light emitting device package 444 may be mounted at the same interval or may be mounted at various separation distances as necessary to adjust brightness. As the substrate 442, a metal core PCB (MCPCB) or a PCB made of FR4 may be used.

The cover 430 may be formed in a circular shape to surround the lower surface of the body 410, but is not limited thereto.

The cover 430 may protect the light emitting device module 443 from the foreign matters. The cover 430 may include diffusing particles to prevent glare of light generated from the light emitting device package 444 and to uniformly emit light to the outside, and may also include at least one of an inner surface and an outer surface of the cover 430. A prism pattern or the like may be formed on the surface. In addition, a phosphor may be applied to at least one of an inner surface and an outer surface of the cover 430.

Since the light generated from the light emitting device package 444 is emitted to the outside through the cover 430, the cover 430 should be excellent in light transmittance, and sufficient heat resistance to withstand the heat generated from the light emitting device package 444. Bar 430 is made of a material containing polyethylene terephthalate (PET), polycarbonate (PC), polymethyl methacrylate (PMMA), etc. Can be formed.

Closing cap 450 is located at both ends of the body 410 may be used for sealing the power supply (not shown). Power cap 452 is formed in the closing cap 450, the lighting system 400 according to the embodiment can be used immediately without a separate device to the terminal from which the existing fluorescent lamps are removed.

7 is an exploded perspective view of a liquid crystal display including a light emitting device according to an embodiment.

7 is an edge-light method, the liquid crystal display 500 may include a liquid crystal display panel 510 and a backlight unit 570 for providing light to the liquid crystal display panel 510.

The liquid crystal display panel 510 may display an image by using light provided from the backlight unit 570. The liquid crystal display panel 510 may include a color filter substrate 512 and a thin film transistor substrate 514 facing each other with a liquid crystal interposed therebetween.

The color filter substrate 512 may implement colors of an image displayed through the liquid crystal display panel 510.

The thin film transistor substrate 514 is electrically connected to the printed circuit board 518 on which a plurality of circuit components are mounted through the driving film 517. The thin film transistor substrate 514 may apply a driving voltage provided from the printed circuit board 518 to the liquid crystal in response to a driving signal provided from the printed circuit board 518.

The thin film transistor substrate 514 may include a thin film transistor and a pixel electrode formed of a thin film on another substrate of a transparent material such as glass or plastic.

The backlight unit 570 may convert the light provided from the light emitting device module 520, the light emitting device module 520 into a surface light source, and provide the light guide plate 530 to the liquid crystal display panel 510. Reflective sheet for reflecting the light emitted from the rear of the light guide plate 530 and the plurality of films 550, 560, 564 to uniform the luminance distribution of the light provided from the 530 and improve the vertical incidence ( 540.

The light emitting device module 520 may include a PCB substrate 522 so that a plurality of light emitting device packages 524 and a plurality of light emitting device packages 524 may be mounted to form a module.

The light emitting device package 524 includes a light emitting device (not shown).

The backlight unit 570 is a diffusion film 566 for diffusing light incident from the light guide plate 530 toward the liquid crystal display panel 510 and a prism film 550 for condensing the diffused light to improve vertical incidence. It may be configured, and may include a protective film 564 for protecting the prism film 550.

8 is an exploded perspective view of a liquid crystal display including the light emitting device according to the embodiment. However, the parts shown and described in FIG. 7 will not be repeatedly described in detail.

8 is a direct view liquid crystal display device 600 according to an embodiment. The liquid crystal display 600 may include a liquid crystal display panel 610 and a backlight unit 670 for providing light to the liquid crystal display panel 610. Since the liquid crystal display panel 610 is the same as that described with reference to FIG. 7, a detailed description thereof will be omitted.

The backlight unit 670 may include a plurality of light emitting device modules 623, a reflective sheet 624, a lower chassis 630 in which the light emitting device modules 623 and the reflective sheet 624 are accommodated, and an upper portion of the light emitting device module 623. It may include a diffusion plate 640 and a plurality of optical film 660 disposed in the.

The light emitting device module 623 may include a PCB substrate 621 such that a plurality of light emitting device packages 622 and a plurality of light emitting device packages 622 may be mounted to form a module.

The light emitting device package 622 includes a light emitting device (not shown).

The reflective sheet 624 reflects the light generated from the light emitting device package 622 in the direction in which the liquid crystal display panel 610 is positioned to improve light utilization efficiency.

Light generated by the light emitting device module 623 is incident on the diffusion plate 640, and the optical film 660 is disposed on the diffusion plate 640. The optical film 660 includes a diffusion film 666, a prism film 650, and a protective film 664.

The light emitting device according to the embodiment may not be limitedly applied to the configuration and method of the embodiments described as described above, but the embodiments may be selectively combined with all or some of the embodiments so that various modifications may be made. It may be configured.

Although the preferred embodiments have been illustrated and described above, the invention is not limited to the specific embodiments described above, and does not depart from the gist of the invention as claimed in the claims. Various modifications can be made by the person having the above, and these modifications should not be understood individually from the technical idea or the prospect of the present invention.

100: light emitting element
110: substrate
132: first semiconductor layer
134: active layer
136: second semiconductor layer
140: first electrode
150: second electrode
160: transparent electrode layer
170: reflective layer

Claims (13)

Board;
A light emitting structure on the substrate, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer;
A transparent electrode layer disposed on the second semiconductor layer;
A first electrode disposed on the first semiconductor layer, the first electrode including a first pad and a first finger connected to the first pad;
A second electrode disposed on the transparent electrode layer, the second electrode including a second pad and a second finger connected to the second pad;
A reflection layer including a plurality of dielectric layers and horizontally overlapping the transparent electrode layer and vertically overlapping the second semiconductor layer;
The reflective layer,
Plural forms a pattern,
Disposed between the first pad and the second finger, disposed between the second pad and the first finger,
It is arranged to form a group adjacent to the side of the second pad,
The reflective layer is formed so as not to overlap with the first finger and the second finger in a vertical direction,
The reflective layer is formed higher than the second semiconductor layer. The method of claim 1,
The plurality of reflective layers are formed by forming a group so as to be adjacent to the side of the first pad. delete delete The method of claim 1,
The reflective layer has a thickness of 50 nm to 5㎛. The method of claim 1,
The reflective layer includes a first dielectric layer and a second dielectric layer stacked in pairs,
The first dielectric layer comprises silicon oxide (SiO 2),
The second dielectric layer includes titanium oxide (TiO 2) or tantalum oxide (Ta 2 O 5). The method of claim 6,
The reflective layer includes one to fifty pairs of the first dielectric layer and the second dielectric layer. delete delete The method of claim 1,
The upper surface of the reflective layer is circular, oval or polygonal,
The area of the upper surface of the reflective layer is 400nm 2 to 100㎛ 2 ,
The reflective layer includes a metal layer including a metal material on the top thereof,
The metal layer includes silver (Ag), aluminum (Al) or silver-copper alloy (AgCu). delete delete delete
KR1020130009469A 2013-01-28 2013-01-28 Light emitting device KR102042236B1 (en)

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KR102042236B1 true KR102042236B1 (en) 2019-11-07

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Publication number Priority date Publication date Assignee Title
KR101769078B1 (en) * 2010-11-18 2017-08-18 서울바이오시스 주식회사 Light emitting diode chip having electrode pad
KR101762787B1 (en) * 2010-12-20 2017-07-28 엘지이노텍 주식회사 Light emitting device, Light emitting device package and light system
KR101312403B1 (en) * 2011-01-04 2013-09-27 갤럭시아포토닉스 주식회사 Light emitting diode having current blocking holes and light emitting diode package
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