KR101722632B1 - Light-emitting device - Google Patents

Abstract

The light emitting device package may include a package body having a cavity formed therein, a light source unit mounted on the cavity, and a resin filled in the cavity. The resin material may include a concave portion extending from the upper surface of the resin body to a predetermined depth. As a result, the generation of stress inside the package is reduced to prevent the foreign matter from penetrating into the package, thereby increasing the luminance and also improving the heat radiation effect, the wire stress reduction, and other reliability factors.

Description

[0001] Light-emitting device [0002]

An embodiment relates to a light emitting device package.

Light Emitting Diode (LED) is a device that converts electrical signals into light by using the characteristics of compound semiconductors. It is widely used in household appliances, remote control, electric signboard, display, and various automation devices. There is a trend.

In general, miniaturized LEDs are made of a surface mounting device for mounting directly on a PCB (Printed Circuit Board) substrate, and an LED lamp used as a display device is also being developed as a surface mounting device type . Such a surface mount device can replace a conventional simple lighting lamp, which is used for a lighting indicator for various colors, a character indicator, an image indicator, and the like.

As the use area of the LED is widened as described above, it is important to increase the luminance and reliability of the LED, as the luminance and reliability required for a lamp used in daily life, a lamp for a structural signal, etc. are enhanced.

Embodiments provide a light emitting device package capable of minimizing the occurrence of stress in a package to prevent penetration of foreign objects to thereby increase brightness, and also to improve heat radiation effect, wire stress reduction, and other reliability factors.

The light emitting device package may include a package body having a cavity formed therein, a light source unit mounted on the cavity, and a resin material filled in the cavity. The resin material may include a concave portion extending from the upper surface of the resin material to a predetermined depth have.

The light emitting device according to the embodiment can prevent the external foreign matter from penetrating into the package by eliminating the stress in the package by forming the concave portion in the resin material so that the luminance can be increased and also the heat radiation effect, It has an effect of improving the factor.

1 is a cross-sectional view illustrating a light emitting device package according to an embodiment.
Figs. 2 (a) and 2 (b) are enlarged views of the portion A in Fig.
3 is a cross-sectional view illustrating a light emitting device package according to an embodiment.
4 is a cross-sectional view illustrating a light emitting device package according to an embodiment.
5 (a), 5 (b) and 5 (c) are cross-sectional views and plan views of the light emitting device package according to the embodiment.
FIG. 6A is a perspective view illustrating a lighting device including a light emitting device package according to an embodiment, and FIG. 6B is a cross-sectional view illustrating a DD 'sectional view of the lighting device of FIG. 6A.
7 is an exploded perspective view illustrating a backlight unit including the light emitting device package according to the embodiment.
8 is an exploded perspective view illustrating a backlight unit including a light emitting device package according to an embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

The terms spatially relative, "below", "beneath", "lower", "above", "upper" May be used to readily describe a device or a relationship of components to other devices or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the drawings, terms that include different orientations of the device during use or operation. For example, when inverting an element shown in the figures, an element described as "below" or "beneath" of another element may be placed "above" another element. Thus, the exemplary term "below" can include both downward and upward directions. The elements can also be oriented in different directions, so that spatially relative terms can be interpreted according to orientation.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. It is noted that the terms "comprises" and / or "comprising" used in the specification are intended to be inclusive in a manner similar to the components, steps, operations, and / Or additions.

Unless defined otherwise, all terms (including technical and scientific terms) used herein may be used in a sense commonly understood by one of ordinary skill in the art to which this invention belongs. Also, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size and area of each component do not entirely reflect actual size or area.

Further, the angle and direction mentioned in the description of the structure of the light emitting device in the embodiment are based on those shown in the drawings. In the description of the structure of the light emitting device in the specification, reference points and positional relationship with respect to angles are not explicitly referred to, refer to the related drawings.

1 is a cross-sectional view illustrating a light emitting device package according to an embodiment.

1, a light emitting device package 100 includes a package body 110 having a cavity C formed therein, a light source 130 mounted on the cavity, a lead frame 120, 140).

The package body 110 serves as a housing, and a cavity C is formed at the center of the package body 110 so that the light source unit 130 can be mounted in the cavity C.

The package body 110 surrounds the lead frame 120 and is made of a resin material such as polyphthalamide (PPA), silicon (Si), aluminum (Al), aluminum nitride (AlN) (PSG), photo sensitive glass, polyamide 9T (PA9T), syndiotactic polystyrene (SPS), metal materials, sapphire (Al ₂ O ₃ ), beryllium oxide (BeO), printed circuit board As shown in FIG. The package body 110 may be formed by injection molding, etching, or the like, but is not limited thereto.

The cavity C may be formed at an upper portion of the package body 110 so that the light source unit 130 is exposed to the outside. The cavity C may be inclined inside the package body 110. The reflection angle of the light emitted from the light source 130 can be changed according to the angle of the inclined surface, and thus the directivity angle of the light emitted to the outside can be controlled.

Concentration of the light emitted to the outside from the light source unit 130 increases as the directivity angle of light decreases. Conversely, as the directivity angle of the light increases, the concentration of light emitted from the light source unit 130 decreases.

The shape of the cavity C formed in the package body 110 may be circular, square, polygonal, elliptical, or the like, and may be curved, but is not limited thereto.

At this time, a reflection coating film (not shown) may be formed on the side surface and the bottom surface of the cavity C forming the inner wall of the cavity C. Here, the surface of the package body 110 on which the reflective coating film (not shown) is formed may be smooth or have a predetermined roughness, and may be formed of silver (Ag), aluminum (Al), or the like .

The lead frame 120 may be formed of a metal material such as titanium, copper, nickel, gold, chromium, tantalum, platinum, tin, (Al), indium (In), palladium (Pd), cobalt (Co), silicon (Si), germanium (Ge), hafnium (Hf), ruthenium (Ru), and iron (Fe). Further, the lead frame 120 may be formed to have a single layer or a multi-layer structure, but the present invention is not limited thereto.

In addition, the lead frame 120 may be composed of a first lead frame 121 and a second lead frame 122 to apply different power sources. Here, the first lead frame 121 and the second lead frame 122 are spaced apart from each other at a predetermined interval, and a part of the first lead frame 121 and the second lead frame 122 may be surrounded by the package body 110.

The light source unit 130 is a type of semiconductor device mounted on the upper surface of any one of the first lead frame 121 and the second lead frame 122 and emitting light of a predetermined wavelength by an external power source, (Gallium nitride), AlN (aluminum nitride), InN (indium nitride), GaAs (gallium arsenide), and the like. For example, the light source unit 130 may be a light emitting diode.

The light emitting diode may be, for example, a colored light emitting diode that emits light such as red, green, blue, or white, or a UV (Ultra Violet) light emitting diode that emits ultraviolet light. In the embodiment, a single light emitting diode is illustrated as being provided at the central portion, but the present invention is not limited thereto, and it is also possible to include a plurality of light emitting diodes.

In addition, the light emitting diode is applicable to both a horizontal type in which all the electric terminals are formed on the upper surface or a vertical type formed in the upper and lower surfaces.

The resin material 140 may be filled in the cavity C to seal the light source unit 130 and the wire. At this time, the resin material 140 may be formed of a light transmitting resin material such as silicon or epoxy, and the material may be filled in the cavity C and then formed by ultraviolet ray or thermal curing.

The surface of the resin material 140 may be formed in a concave lens shape, a convex lens shape, a flat shape, or the like, and the orientation angle of the light emitted from the light source unit 130 may be changed according to the shape of the resin material 140 .

The resin material 140 may include a concave portion h1 extending from the upper surface of the resin material 140 to a predetermined depth d2.

In the light emitting device package 100, stress is generated in the package body 110 by repeating the expansion and contraction of materials such as the resin material 140 due to thermal shock or changes in the external environment. In the resin material 140, The influence of stress generation inside the package body 110 can be solved.

The concave portion h1 can be formed by using a needle in the resin material when the resin material 140 is soft because the hardness is small. For example, the hollow cylindrical needle may be inserted to a position at which the concave portion is to be formed to a predetermined depth d2, and then the resin material adhered to the needle hole may be removed using air pressure.

In addition, when the resin material 140 has a large hardness, it can be formed by using a drill. In addition, by using a laser or using a strong air pressure before the resin material 140 is completely cured, concave portions h1 ) Can be formed.

The concave portion h1 may have a predetermined depth d2 from 1/3 to 2/3 of the cavity depth d1. If the depth of the recessed portion h1 is larger than 2/3 of the cavity depth, the light source unit 130 can be exposed to the outside, and if it is smaller than 1/3 of the cavity depth, the stress generation inside the package body 110 can be effectively Can not be reduced.

The upper width w2 of the concave portion h1 may be 0.1 mm to 0.5 mm.

If the upper width w2 of the concave portion h1 is larger than 0.5 mm, impurities may easily penetrate the concave portion h1 and the area of the upper surface of the resin material 140 to be removed while forming the concave portion h1 may be excessively large And the sealing force can be weakened. On the other hand, if the top width of the concave portion is smaller than 0.1 mm, the process of forming the concave portion h1 is not easy and stress generation can not be effectively reduced.

The horizontal distance L between the center of the light source 130 and the central axis of the recess h1 may be smaller than 1/6 of the top width w1 of the cavity C. [

The horizontal distance from the light source unit 130 is concentrated at the position where the horizontal distance is within 1/6 of the cavity top width w1 so that the horizontal distance from the light source unit 130 to the cavity top width w1 is 1 / 6, stress generation can be effectively reduced.

By forming the concave portion as described above, it is possible to prevent external flux of water such as sulfur from penetrating into the inside of the package body 110 due to the occurrence of stress in the package body 110, Wire stress reduction and other reliability factors. Moreover, since heat can be directly exchanged with the outside air through the concave portion h1, the heat radiation effect can be obtained.

Further, other resin-shaped resin materials may be formed or adhered on the resin material 140, but the present invention is not limited thereto.

The resin material 140 may include a phosphor. Here, the phosphor may be selected according to the wavelength of the light emitted from the light source unit 130, so that the light emitting device package 100 may realize white light.

That is, the phosphor may be excited by the light having the first light emitted from the light source unit 130 to generate the second light. For example, when the light source unit 130 is a blue light emitting diode and the phosphor is a yellow phosphor , The yellow phosphor may be excited by blue light to emit yellow light, and the blue light generated from the blue light emitting diode and the yellow light generated by excitation by the blue light may be mixed, so that the light emitting device package 100 emits white light can do.

Similarly, when the light source unit 130 is a green light emitting diode, a magenta phosphor or a blue phosphor and a red phosphor are mixed, and when the light source unit 130 is a red light emitting diode, a cyan phosphor or a mixture of blue and green phosphors For example.

Such a fluorescent material may be a known fluorescent material such as a YAG, TAG, sulfide, silicate, aluminate, nitride, carbide, nitridosilicate, borate, fluoride or phosphate.

Fig. 2 (a) is an enlarged view of a portion A in Fig. 1 when the light source portion is a horizontal light emitting element, Fig. 2 (b) is an enlarged view of a portion A in Fig. 1 when the light source portion is a vertical light emitting element to be.

2 (a), the horizontal light emitting device according to the embodiment includes a support substrate 1, a first conductivity type semiconductor layer 2, an active layer 3, and a second conductivity type semiconductor layer 4 The light emitting structure 5, the light transmitting electrode layer 6, the first electrode pad 8, and the second electrode pad 7,

The support substrate 1 may be made of a conductive substrate or an insulating substrate, e.g., sapphire (Al ₂ O _3), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, and Ga ₂ 0 ₃ < / RTI > The support substrate 1 may be wet-cleaned to remove impurities on the surface, and the support substrate 1 may be patterned (PSS) to enhance the light extraction effect, but is not limited thereto .

Although not shown, a buffer layer (not shown) is formed on the supporting substrate 1 so as to mitigate lattice mismatch between the supporting substrate 1 and the first conductivity type semiconductor layer 2 and to facilitate growth of the conductive type semiconductor layers. .

A buffer layer (not shown) may be grown on the support substrate 1 as a single crystal, and a buffer layer (not shown) formed of a single crystal may be grown on the buffer layer (not shown) Can be improved.

The buffer layer (not shown) may be formed of a structure including AlInN / GaN laminated structure including AlN and GaN, InGaN / GaN laminated structure, and AlInGaN / InGaN / GaN laminated structure.

The light emitting structure 130 may be disposed on the support substrate 1 and may include a first conductivity type semiconductor layer 2, an active layer 3 and a second conductivity type semiconductor layer 4, The active layer 3 may be interposed between the semiconductor layer 2 and the second conductivity type semiconductor layer 4.

The first conductivity type semiconductor layer 2 is a semiconductor material having a composition formula of Al _x In _y Ga _(1-xy) N (0 = x = 1, 0 = y = 1, 0 = x + y = 1) For example, one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. And may be formed using another Group 5 element instead of N. For example, at least one of AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, and InP. When the first conductivity type semiconductor layer 2 is, for example, an N-type conductivity-type semiconductor layer, it may include Si, Ge, Sn, Se, Te or the like as an N-type dopant.

The active layer 3 may be formed on the first conductivity type semiconductor layer 2. The active layer 3 is a region where electrons and holes are recombined. As the electrons and the holes are recombined, the active layer 3 transits to a low energy level, and light having a wavelength corresponding thereto can be generated.

The active layer 3 includes a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? 1) And may be formed of a single quantum well structure or a multi quantum well (MQW) structure.

Therefore, more electrons are collected at the lower energy level of the quantum well layer, and as a result, the recombination probability of electrons and holes is increased, and the luminous efficiency can be improved. It may also include a quantum wire structure or a quantum dot structure.

The second conductive semiconductor layer 4 may be formed on the active layer 3. The second conductivity type semiconductor layer 4 is formed of a p-type conductivity type semiconductor layer, and holes can be injected into the active layer 3. For example, the p-type conductivity type semiconductor layer is a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? For example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN and AlInN, and a p-type dopant such as Mg, Zn, Ca, Sr and Ba may be doped.

A third conductivity type semiconductor layer (not shown) may be formed on the second conductivity type semiconductor layer 4. Here, the third conductive type semiconductor layer may be implemented as a conductive type semiconductor layer whose polarity is opposite to that of the second conductive type semiconductor layer 4.

The first conductivity type semiconductor layer 2, the active layer 3 and the second conductivity type semiconductor layer 4 may be formed by metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD) Deposition, plasma enhanced chemical vapor deposition (PECVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), and sputtering And the present invention is not limited thereto.

In addition, unlike the above-described embodiments, the first conductivity type semiconductor layer 2 may be a p-type conductivity type semiconductor layer, and the second conductivity type semiconductor layer 4 may be an n-type conductivity type semiconductor layer But is not limited thereto.

The transparent electrode layer 6 is disposed on the light emitting structure 5 and is formed of indium tin oxide (ITO), aluminum zinc oxide (AZO), indium zinc oxide (IZO) (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IrO x, RuO x , RuO _x / ITO, Ni / IrO _x / Au, or Ni / IrO _x / Au / ITO. However, the present invention is not limited thereto.

The first electrode pad 8 may be formed on the transparent electrode layer 6 and the second electrode pad 7 may be formed on the first conductive semiconductor layer 2. At this time, mesa etching is performed from the second conductivity type semiconductor layer 4 to a portion of the first conductivity type semiconductor layer 2, thereby securing a space for forming the second electrode pad 7. The second electrode pad 7 can be formed in the exposed region of the surface of the first conductivity type semiconductor layer 2.

The first electrode pad 8 and the second electrode pad 7 may be formed of a conductive material such as indium (In), cobalt (Co), silicon (Si), germanium (Ge) (Au), Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rh, (Al), nickel (Ni), and copper (Cu) selected from the group consisting of Ir, tungsten, titanium, silver, chromium, molybdenum, niobium, Or may be formed of two or more alloys, or may be formed by laminating two or more different materials.

2 (a), the horizontal light emitting device is electrically connected to the first lead frame 121 and the second lead frame 122 by a wire bonding method through two wires 9, .

2, a vertical light emitting device according to an embodiment includes a support substrate 10, a first conductive semiconductor layer 21, an active layer 22, a second conductive semiconductor The light emitting structure 20 including the layer 23, the light transmitting electrode layer 30, the reflective layer 40, the conductive layer 50, and the first electrode pad 60. Compared with the embodiment of FIG. 2 (a), the light emitting device further includes a conductive layer 50 and a reflective layer 40 on the supporting substrate 10, and the first electrode pad 60 is formed on the first conductive semiconductor layer 21 ). ≪ / RTI > Description of the same components will be omitted below.

The support substrate 10 may be formed of a conductive material and may be formed of a metal such as gold (Au), nickel (Ni), tungsten (W), molybdenum (Mo), copper (Cu) Ta, Ag, Pt, Cr, Si, Ge, GaAs, ZnO, GaN, Ga ₂ O ₃ or SiC, SiGe or CuW, or formed of two or more alloys And may be formed by laminating two or more different materials.

The support substrate 10 facilitates the emission of heat generated in the light emitting device, thereby improving the thermal stability of the light emitting device.

A coupling layer (not shown) may be formed on the supporting substrate 10 for coupling the supporting substrate 10 and the conductive layer 50. The bonding layer (not shown) may be formed of, for example, a layer composed of gold (Au), tin (Sn), indium (In), silver (Ag), nickel (Ni), niobium (Nb) and copper , Or an alloy thereof.

The conductive layer 50 is formed of a material selected from the group consisting of Ni-nickel, platinum Pt, titanium Ti, tungsten W, vanadium V, iron Fe, and molybdenum Mo Or an alloy optionally containing them.

The conductive layer 50 may be formed using a sputtering deposition method. When a sputter deposition method is used, ions of the source material are sputtered and deposited when the ionized atoms are accelerated by an electric field to impinge on the source material of the conductive layer 50. In addition, an electrochemical metal deposition method, a bonding method using a eutectic metal, or the like may be used according to the embodiment. The conductive layer 50 may be formed of a plurality of layers according to an embodiment.

The conductive layer 50 has an effect of minimizing mechanical damage (cracking or peeling) that may occur in the manufacturing process of the light emitting device.

In addition, the conductive layer 50 has an effect of preventing diffusion of the metal material constituting the support substrate 10 or the bonding layer (not shown) into the light emitting structure 20. [

On the other hand, irregularities for improving light extraction efficiency can be formed on a part of the surface or the entire surface of the first conductivity type semiconductor layer 21 by a predetermined etching method.

The light transmitting electrode layer 30 may include a bonding layer (not shown) and a reflective layer 40 wherein the bonding layer (not shown) may be a barrier metal or a bonding metal, (Au), tin (Sn), nickel (Ni), chrome (Cr), gallium (Ga), indium (In), bismuth (Bi), copper (Cu), silver (Ag) Or the like.

The light transmitting electrode layer 30 may be a structure of an ohmic layer / a reflection layer / a bonding layer, a laminate structure of an ohmic layer / a reflection layer, or a structure of a reflection layer (including an ohmic layer) / a bonding layer. In addition, the upper layers may be formed to have a very thin thickness and may appear as an alloy in which some of the interlayer materials are mixed during actual manufacture.

The reflective layer 40 reflects light toward the upper side of the light emitting device when a part of the light generated in the active layer 22 of the light emitting structure 20 is directed toward the support substrate 10, Can be improved.

The reflective layer 40 is made of a metal layer containing aluminum (Al), silver (Ag), nickel (Ni), platinum (Pt), rhodium (Rh), or an alloy containing Al, Ag, Pt, The metal material and the light transmitting conductive material such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, and ATO can be used to form a multilayer. Also, the reflective layer 270 can be laminated with IZO / Ni, AZO / Ag, IZO / Ag / Ni, AZO / Ag / In the case where the reflective layer 40 is formed of a material that makes an ohmic contact with the light emitting structure (for example, the second conductivity type semiconductor layer 23), the ohmic layer (not shown) may not be formed separately, .

The ohmic layer (not shown) is in ohmic contact with the lower surface of the light emitting structure (for example, the second conductivity type semiconductor layer 23), and may be formed as a layer or a plurality of patterns. As the ohmic layer (not shown), a light-transmitting conductive layer and a metal may be selectively used. The ohmic layer (not shown) may selectively use a light-transmitting conductive layer and a metal. For example, the ohmic layer may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO) zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZON TiO 2, Ag, Ni, Cr, Ti, Al, and ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, And may include at least one of Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, Au and Hf. The ohmic layer (not shown) may be formed by a sputtering method or an electron beam evaporation method.

Although the reflective layer 40 and the transparent electrode layer 30 are described as having the same width and length, at least one of the width and the length may be different and is not limited thereto.

2 (b), the vertical light emitting device is electrically connected to the first lead frame 121 and the second lead frame 122 by a wire bonding method through one wire 70, .

3 is a cross-sectional view illustrating a light emitting device package according to an embodiment.

Referring to FIG. 3, the concave portion h2 may be vertically overlapped with the light source portion 230. Referring to FIG.

Since the thermal shock is concentrated at a position vertically overlapping with the light source 230, if the concave portion h2 is formed at that position, the effect of reducing stress generation can be increased.

At this time, it is important to form the concave portion h2 so that the light source unit 230 and the wire 250 are not exposed to the outside. Therefore, the concave portion h2 is formed so that the light source portion 230, the concave portion h2, the wire 250 and the concave portion h2 are spaced apart from each other by a predetermined distance in consideration of the positions of the light source portion 230 and the wire 250 can do.

4 is a cross-sectional view illustrating a light emitting device package according to an embodiment.

Referring to FIG. 4, a part of the concave portion h3 may be filled with an encapsulating material 360. FIG.

If external impurities such as dust penetrate into the concave portion h3, the generation of stress can not be effectively prevented. Therefore, the concave portion h3 can be filled with the sealing material 360 to prevent external impurities from penetrating.

At this time, since the encapsulant 360 filling the concave portion h3 has a hardness greater than or equal to the hardness of the resin 340, the occurrence of stress may be rather increased. Therefore, a material having hardness lower than that of the resin 340 . For example, it may be soft silicon or the like.

Further, the sealing material 360 may be filled in a part of the concave portion h3, but not all of the concave portion h3, thereby effectively preventing the influence of stress generation while preventing impurities from penetrating.

5 (a), 5 (b) and 5 (c) are cross-sectional views and plan views of the light emitting device package according to the embodiment.

5 (a), 5 (b) and 5 (c), the vertical cross section of the concave portion h may be a rectangular shape, a V shape or a U shape, and the planar shape of the concave portion h is circular Square, and the like.

Here, the shape of the concave portion h may be a cylindrical shape (cylindrical shape). . If the shape of the concave portion h is a cylindrical shape, the concave portion h can be easily formed using the cylindrical needle as described above, and it is effective to reduce the generation of stress by enlarging the surface area relative to the volume.

However, the shape of the concave portion h is not limited to the above-described shapes, but may be formed in various shapes.

Further, the recesses h may be formed in a plurality of, and the plurality of recesses h may be regularly or irregularly arranged. At this time, if the concave portions h are formed in plural, the generation of stress can be effectively reduced as compared with when one concave portion h is formed.

In addition, the concave portion h may be formed continuously to have a shape of a groove (concave and long dashed line). In this case, a plurality of concave portions h are formed by forming one groove.

FIG. 6A is a perspective view illustrating a lighting device including a light emitting device package according to an embodiment, and FIG. 6B is a cross-sectional view taken along line D-D 'of the lighting device of FIG. 6A.

In order to describe the shape of the illumination device 400 according to the embodiment in detail, the longitudinal direction Z of the illumination device 400, the horizontal direction Y perpendicular to the longitudinal direction Z, The direction Z and the horizontal direction Y and the vertical direction X perpendicular to the horizontal direction Y will be described.

6B is a cross-sectional view of the lighting apparatus 400 of FIG. 6A cut in the longitudinal direction Z and the height direction X and viewed in the horizontal direction Y. FIG.

6A and 6B, the lighting device 400 may include a body 410, a cover 430 coupled to the body 410, and a finishing cap 450 positioned at opposite ends of the body 410 have.

The light emitting device module 440 is coupled to a lower surface of the body 410. The body 410 is electrically conductive so that heat generated from the light emitting device package 444 can be emitted to the outside through the upper surface of the body 410. [ And a metal material having an excellent heat dissipation effect.

The light emitting device package 444 may be mounted in a multi-color, multi-row manner on a PCB 442 to form an array. The light emitting device package 444 may be mounted at equal intervals or may be mounted with various distances as required, . As the PCB 442, MCPCB (Metal Core PCB) or FR4 PCB can be used.

Meanwhile, the light emitting device package 444 may include a film formed of a plurality of holes and made of a conductive material.

Since a film formed of a conductive material such as a metal generates a large amount of optical interference, the intensity of a light wave can be enhanced by the interaction of light waves, so that light can be extracted and diffused effectively. It is possible to effectively extract light through interference and diffraction of light. Thus, the efficiency of the illumination device 400 can be improved. At this time, it is preferable that the size of the plurality of holes formed in the film is smaller than the wavelength of light generated in the light source portion.

The cover 430 may be formed in a circular shape so as to surround the lower surface of the body 410, but is not limited thereto.

The cover 430 protects the internal light emitting device module 440 from foreign substances or the like. The cover 430 may include diffusion particles to prevent glare of the light generated in the light emitting device package 444 and uniformly emit light to the outside and may include at least one of an inner surface and an outer surface of the cover 430 A prism pattern or the like may be formed on one side. Further, the phosphor may be coated on at least one of the inner surface and the outer surface of the cover 430.

Since the light generated in the light emitting device package 444 is emitted to the outside through the cover 430, the cover 430 should have a high light transmittance and sufficient heat resistance to withstand the heat generated in the light emitting device package 444 The cover 430 is preferably made of a material including polyethylene terephthalate (PET), polycarbonate (PC), or polymethyl methacrylate (PMMA) .

The finishing cap 450 is located at both ends of the body 410 and can be used for sealing the power supply unit (not shown). In addition, the fin 450 is formed on the finishing cap 450, so that the lighting device 400 according to the embodiment can be used immediately without a separate device on the terminal from which the conventional fluorescent lamp is removed.

7 is an exploded perspective view illustrating a backlight unit including the light emitting device package according to the embodiment.

7, the liquid crystal display 500 may include a liquid crystal display panel 510 and a backlight unit 570 for providing light to the liquid crystal display panel 510 in an edge-light manner.

The liquid crystal display panel 510 can display an image using the light provided from the backlight unit 570. The liquid crystal display panel 510 may include a color filter substrate 512 and a thin film transistor substrate 514 facing each other with a liquid crystal therebetween.

The color filter substrate 512 can realize the color of an image to be displayed through the liquid crystal display panel 510.

The thin film transistor substrate 514 is electrically connected to a printed circuit board 518 on which a plurality of circuit components are mounted via a driving film 517. The thin film transistor substrate 514 may apply a driving voltage provided from the printed circuit board 518 to the liquid crystal in response to a driving signal provided from the printed circuit board 518. [

The thin film transistor substrate 514 may include a thin film transistor and a pixel electrode formed as a thin film on another substrate of a transparent material such as glass or plastic.

The backlight unit 570 includes a light emitting device module 520 for outputting light, a light guide plate 530 for changing the light provided from the light emitting module 520 into a surface light source to provide the light to the liquid crystal display panel 510, A plurality of films 550, 560, and 564 that uniformly distribute the luminance of light provided from the light guide plate 530 and improve vertical incidence, and a reflective sheet (not shown) that reflects light emitted to the rear of the light guide plate 530 to the light guide plate 530 540).

The light emitting device module 520 may include a PCB substrate 522 for mounting a plurality of light emitting device packages 524 and a plurality of light emitting device packages 524 to form an array.

In particular, since the light emitting device package 524 includes a film having a plurality of holes on the light emitting surface, the lens can be omitted to realize a slim light emitting device package, and at the same time, the light extraction efficiency can be improved. Therefore, it becomes possible to realize the backlight unit 570 which is thinner.

The backlight unit 570 includes a diffusion film 560 for diffusing light incident from the light guide plate 530 toward the liquid crystal display panel 510 and a prism film 550 for enhancing vertical incidence by condensing the diffused light And may include a protective film 564 for protecting the prism film 550. [

8 is an exploded perspective view illustrating a backlight unit including a light emitting device package according to an embodiment.

However, the parts shown and described in Fig. 7 are not repeatedly described in detail.

8, the liquid crystal display 600 may include a liquid crystal display panel 610 and a backlight unit 670 for providing light to the liquid crystal display panel 610 in a direct-down manner.

Since the liquid crystal display panel 610 is the same as that described with reference to FIG. 7, a detailed description thereof will be omitted.

The backlight unit 670 includes a plurality of light emitting element modules 623, a reflective sheet 624, a lower chassis 630 in which the light emitting element module 623 and the reflective sheet 624 are accommodated, And a plurality of optical films 660 disposed on the diffuser plate 640.

The light emitting device module 623 may include a PCB substrate 621 for mounting a plurality of light emitting device packages 622 and a plurality of light emitting device packages 622 to form an array.

In particular, since the light emitting device package 622 is formed of a conductive material and a film including a plurality of holes is provided on the light emitting surface, the lens can be omitted, thereby realizing a slim light emitting device package, Can be improved. Therefore, it becomes possible to realize the backlight unit 670 which is thinner.

The reflective sheet 624 reflects light generated from the light emitting device package 622 in a direction in which the liquid crystal display panel 610 is positioned, thereby improving light utilization efficiency.

The light emitted from the light emitting element module 623 is incident on the diffusion plate 640 and the optical film 660 is disposed on the diffusion plate 640. The optical film 660 is composed of a diffusion film 666, a prism film 650, and a protective film 664.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It should be understood that various modifications may be made by those skilled in the art without departing from the spirit and scope of the present invention.

100, 200, 300: light emitting device package 110: package body
120: lead frame 130, 230: light source part
140, 340: Resin water 150, 250: Wire
360: Encapsulation material

Claims (13)

A package body having a cavity formed therein;
A light source unit mounted on the cavity; And
And a resin filled in the cavity,
Wherein the resin material includes a concave portion extending from an upper surface of the resin material to a predetermined depth,
Wherein the recess is filled with a sealing material having a hardness lower than that of the resin. The method according to claim 1,
The predetermined depth of the concave portion is 1/3 to 2/3 of the depth of the cavity,
Wherein the concave portions are formed in a plurality of, the plurality of concave portions are regularly or irregularly arranged,
Wherein the resin material comprises a phosphor. The method according to claim 1,
Wherein the concave portion is vertically overlapped with the light source portion,
Wherein a horizontal distance between a center axis of the concave portion and a center of the light source portion is smaller than 1/6 of a width of the cavity top portion. delete The method according to claim 1,
Wherein the package body has a first lead frame and a second lead frame,
Wherein the light source unit is disposed on one of the first lead frame and the second lead frame,
And a wire electrically connecting the light source unit, the first lead frame, the light source unit, and the second lead frame,
Wherein the concave portion, the wire, the concave portion, and the light source portion are spaced apart from each other by a predetermined distance. delete The method according to claim 1,
The vertical cross section of the concave portion is any one of a V shape, a U shape, and a rectangular shape,
And an upper width of the concave portion is 0.1 mm to 0.5 mm. delete delete delete delete A lighting device comprising the light emitting device package according to any one of claims 1 to 3, 5 and 7. A display device comprising the light emitting device package according to any one of claims 1 to 3, 5 and 7.

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