KR20130067821A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
KR20130067821A
KR20130067821A KR1020110134774A KR20110134774A KR20130067821A KR 20130067821 A KR20130067821 A KR 20130067821A KR 1020110134774 A KR1020110134774 A KR 1020110134774A KR 20110134774 A KR20110134774 A KR 20110134774A KR 20130067821 A KR20130067821 A KR 20130067821A
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KR
South Korea
Prior art keywords
layer
semiconductor layer
light emitting
electron blocking
emitting device
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KR1020110134774A
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Korean (ko)
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황정현
백광선
정종필
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엘지이노텍 주식회사
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Priority to KR1020110134774A priority Critical patent/KR20130067821A/en
Publication of KR20130067821A publication Critical patent/KR20130067821A/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025Physical imperfections, e.g. particular concentration or distribution of impurities
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes

Abstract

The light emitting device according to the embodiment includes a light emitting structure including an active layer between the first semiconductor layer, the second semiconductor layer, and the first semiconductor layer and the second semiconductor layer, and the active layer between the active layer and the second semiconductor layer. And an electron blocking layer having a large band gap, wherein the electron blocking layer is doped with a p-type dopant, and a doping concentration of the first region adjacent to the active layer is smaller than that of another region.
A light emitting structure comprising a substrate, a first semiconductor layer disposed on the substrate, the first semiconductor layer, and an active layer between the second semiconductor layer, the third semiconductor layer, and the second and third semiconductor layers. A fourth semiconductor layer disposed on the first semiconductor layer and separated from the light emitting structure, a passivation disposed between the light emitting structure and the fourth semiconductor layer, first electrodes formed on the first and second semiconductor layers, and the passivation Is disposed on, and may include a second electrode formed on the third, fourth semiconductor layer.

Description

[0001]

The embodiment relates to a light emitting device in which the luminous efficiency is improved.

As a typical example of a light emitting device, a light emitting diode (LED) is a device for converting an electric signal into an infrared ray, a visible ray, or a light using the characteristics of a compound semiconductor, and is used for various devices such as household appliances, remote controllers, Automation equipment, and the like, and the use area of LEDs is gradually widening.

In general, miniaturized LEDs are made of a surface mounting device for mounting directly on a PCB (Printed Circuit Board) substrate, and an LED lamp used as a display device is also being developed as a surface mounting device type . Such a surface mount device can replace a conventional simple lighting lamp, which is used for a lighting indicator for various colors, a character indicator, an image indicator, and the like.

As the use area of the LED is widened as described above, it is important to increase the luminance of the LED as the brightness required for a lamp used in daily life and a lamp for a structural signal is increased.

The embodiment provides a light emitting device that does not damage the active layer in the light emitting device using the electron blocking layer.

The light emitting device according to the embodiment includes a light emitting structure including an active layer between the first semiconductor layer, the second semiconductor layer, and the first semiconductor layer and the second semiconductor layer, and the active layer between the active layer and the second semiconductor layer. And an electron blocking layer having a large band gap, wherein the electron blocking layer is doped with a p-type dopant, and a doping concentration of the first region adjacent to the active layer is smaller than that of another region.

The light emitting device according to the embodiment may increase the probability of recombination of electrons and holes in the active layer by having an electron blocking layer, and prevent leakage current.

In addition, since the electron blocking layer can be formed without damaging the active layer, the luminous efficiency of the light emitting device can be improved.

1 is a cross-sectional view showing a light emitting device according to an embodiment.
FIG. 2 is an enlarged partial view of region A of FIG. 1.
3 illustrates a dopant doping concentration of the electron blocking layer according to the embodiment.
4 illustrates a dopant doping concentration of the electron blocking layer according to another exemplary embodiment.
5 illustrates a dopant doping concentration of the electron blocking layer according to another exemplary embodiment.
FIG. 6 illustrates a dopant doping concentration of an electron blocking layer according to another exemplary embodiment.
FIG. 7 illustrates a dopant doping concentration of an electron blocking layer according to another exemplary embodiment.
8 is a diagram illustrating an energy band diagram of a light emitting device according to an embodiment.
9 is a diagram illustrating an energy band diagram of a light emitting device according to another embodiment.
10 is a diagram illustrating an energy band diagram of a light emitting device according to another embodiment.
FIG. 11 is an enlarged partial view of a cross section of an electron blocking layer according to another exemplary embodiment. FIG.
12 is a cross-sectional view illustrating a light emitting device according to yet another embodiment.
13 is a perspective view showing a light emitting device package including a light emitting device according to the embodiment.
14 is a cross-sectional view illustrating a cross section of a light emitting device package including a light emitting device according to the embodiment.
15 is a perspective view illustrating a lighting device including a light emitting device according to the embodiment.
FIG. 16 is a cross-sectional view illustrating a CC ′ cross section of the lighting apparatus of FIG. 17.
17 is an exploded perspective view of a liquid crystal display including the light emitting device according to the embodiment.
18 is an exploded perspective view of a liquid crystal display including the light emitting device according to the embodiment.

Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described below in detail with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout.

The terms spatially relative, "below", "beneath", "lower", "above", "upper" May be used to readily describe a device or a relationship of components to other devices or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the drawings, terms that include different orientations of the device during use or operation. For example, when flipping a device shown in the figure, a device described as "below" or "beneath" of another device may be placed "above" of another device. Thus, the exemplary term "below" can include both downward and upward directions. The device can also be oriented in other directions, so that spatially relative terms can be interpreted according to orientation.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. It is noted that the terms "comprises" and / or "comprising" used in the specification are intended to be inclusive in a manner similar to the components, steps, operations, and / Or additions.

Unless otherwise defined, all terms (including technical and scientific terms) used in the present specification may be used in a sense that can be commonly understood by those skilled in the art. Also, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size and area of each component do not entirely reflect actual size or area.

Further, the angle and direction mentioned in the description of the structure of the light emitting device in the embodiment are based on those shown in the drawings. In the description of the structure of the light emitting device in the specification, reference points and positional relationship with respect to angles are not explicitly referred to, refer to the related drawings.

1 is a cross-sectional view illustrating a light emitting device according to an embodiment, and FIG. 2 is a partially enlarged view illustrating an area A of FIG. 1.

1, the light emitting device 100 may include a support member 110 and a light emitting structure 160 disposed on the support member 110. The light emitting structure 160 may include a first semiconductor layer 120 , An active layer 130, an electron blocking layer 140, and a second semiconductor layer 150.

The support member 110 may be formed of any material having optical transparency, for example, sapphire (Al 2 O 3 ), GaN, ZnO, or AlO. However, the support member 110 is not limited thereto. Further, it can be a SiC supporting member having a higher thermal conductivity than a sapphire (Al 2 O 3 ) supporting member. However, it is preferable that the refractive index of the support member 110 is smaller than the refractive index of the first semiconductor layer 120 for the light extraction efficiency.

On the other hand, a PSS (Patterned SubStrate) structure may be provided on the upper surface of the support member 110 to enhance light extraction efficiency. The support member 110 referred to herein may or may not have a PSS structure.

A buffer layer (not shown) may be disposed on the support member 110 to mitigate lattice mismatch between the support member 110 and the first semiconductor layer 120 and allow the semiconductor layer to grow easily. The buffer layer (not shown) may be formed in a low temperature atmosphere, and may be formed of a material capable of alleviating the difference in lattice constant between the semiconductor layer and the support member. For example, materials such as GaN, InN, AlN, AlInN, InGaN, AlGaN, and InAlGaN can be selected and not limited thereto. A buffer layer (not shown) may be grown as a single crystal on the supporting member 110, and a buffer layer (not shown) grown by a single crystal may improve the crystallinity of the first semiconductor layer 120 grown on the buffer layer .

The light emitting structure 160 including the first semiconductor layer 120, the active layer 130, and the second semiconductor layer 150 may be formed on the buffer layer (not shown).

The first semiconductor layer 120 may be located on a buffer layer (not shown). The first semiconductor layer 120 may be formed of an n-type semiconductor layer and may provide electrons to the active layer 130. The first semiconductor layer 120 is, for example, semiconductor material having a compositional formula of In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) For example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, etc. may be selected, and n-type dopants such as Si, Ge, Sn, and the like may be doped.

Further, the semiconductor layer 120 may further include an undoped semiconductor layer (not shown), but the present invention is not limited thereto. The un-doped semiconductor layer is a layer formed for improving the crystallinity of the first semiconductor layer 120 and has a lower electrical conductivity than the first semiconductor layer 120 without doping the n-type dopant. May be the same as the semiconductor layer 120.

The active layer 130 may be formed on the first semiconductor layer 120. The active layer 130 may be formed of a single or multiple quantum well structure, a quantum-wire structure, a quantum dot structure, or the like using a compound semiconductor material of Group 3-V group elements.

An active layer 130, the well having a composition formula of, for example, In x Al y Ga 1 -x- y N (0≤x≤1, 0 ≤y≤1, 0≤x + y≤1) if formed of a quantum well structure, Have a single or multiple quantum well structure having a layer and a barrier layer having a composition formula of In a Al b Ga 1 -a- b N (0≤a≤1, 0≤b≤1, 0≤a + b≤1) Can be. The well layer may be formed of a material having a band gap smaller than the band gap of the barrier layer.

Referring to FIG. 2, the active layer 130 may include, for example, first to third well layers Q1, Q2 and Q3 and first to third barrier layers B1, B2 and B3.

Here, the well layer closest to the first semiconductor layer 120, and the barrier layer are defined as a first well layer Q1 and a first barrier layer B1.

The first through third well layers Q1, Q2 and Q3 and the first through third barrier layers B1, B2 and B3 may have a structure in which they are alternately stacked as shown in FIG.

Meanwhile, in FIG. 2, the first to third well layers Q1, Q2 and Q3 and the first to third barrier layers B1, B2, B3, are formed, respectively, and the first to third barrier layers B1 and B2, respectively. , B3) and the first to third well layers Q1, Q2, and Q3 are alternately stacked, but are not limited thereto, and the well layers Q1, Q2, Q3, and barrier layers B1, B2, B3) may be formed to have any number, and the arrangement may also have any arrangement. In addition, as described above, the composition ratios, band gaps, and thicknesses of the materials forming the respective well layers Q1, Q2, and Q3, and the respective barrier layers B1, B2, and B3 may be different from each other.

A conductive clad layer (not shown) may be formed on and / or below the active layer 130. The conductive clad layer (not shown) may be formed of an AlGaN-based semiconductor and may have a band gap larger than that of the active layer 130.

The second semiconductor layer 150 may be implemented as a p-type semiconductor layer to inject holes into the active layer 130. A second semiconductor layer 150 is, for example, semiconductor material having a compositional formula of In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) For example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, etc. may be selected, and p-type dopants such as Mg, Zn, Ca, Sr, and Ba may be doped.

An electron blocking layer 140 may be formed between the active layer 130 and the second semiconductor layer 150. The electron blocking layer 140 may be formed from the first semiconductor layer 120 to the active layer 130 Electrons injected into the second semiconductor layer 150 can be prevented from flowing to the second semiconductor layer 150 without being recombined in the active layer 130. The electron blocking layer 140 has a band gap relatively larger than that of the active layer 130 so that electrons injected from the first semiconductor layer 120 are injected into the second semiconductor layer 150 without being recombined in the active layer 130. [ Can be prevented. Accordingly, it is possible to increase the probability of recombination of electrons and holes in the active layer 140 and to prevent a leakage current.

On the other hand, the above-described electron blocking layer 140 may have a bandgap larger than the bandgap of the barrier layer included in the active layer 130, it may be formed of a semiconductor layer containing Al, such as p-type AlGaN, InAlGaN, It is not limited to this.

The first semiconductor layer 120, the active layer 130, the electron blocking layer 140, and the second semiconductor layer 150 may be formed by, for example, MOCVD (Metal Organic Chemical Vapor Deposition) (CVD), a plasma enhanced chemical vapor deposition (PECVD), a molecular beam epitaxy (MBE), a hydride vapor phase epitaxy (HVPE), a sputtering Sputtering), and the like, but the present invention is not limited thereto.

In addition, the doping concentrations of the conductive dopants in the first semiconductor layer 120 and the second semiconductor layer 150 can be uniformly or nonuniformly formed. That is, the plurality of semiconductor layers may be formed to have various doping concentration distributions, but the invention is not limited thereto.

The first semiconductor layer 120 may be a p-type semiconductor layer, the second semiconductor layer 150 may be an n-type semiconductor layer, and an n-type or p-type semiconductor may be formed on the second semiconductor layer 150. [ A third semiconductor layer (not shown) may be formed. Accordingly, the light emitting device 100 may have at least one of np, pn, npn, and pnp junction structures.

On the other hand, the first electrode 174 may be formed on at least one surface of the first semiconductor layer 120. That is, the first electrode 174 is electrically connected to the first semiconductor layer 120. For example, the active layer 130 and the second semiconductor layer 150 may be partially removed to expose a portion of the first semiconductor layer 120, and a first electrode (not shown) may be formed on the exposed first semiconductor layer 120, 174 may be formed. That is, the first semiconductor layer 120 includes a top surface facing the active layer 130 and a bottom surface facing the supporting member 110, and an upper surface includes a region exposed at least one region, and the first electrode 174 Can be disposed on the exposed area of the upper surface. However, the present invention is not limited thereto.

Meanwhile, a method of exposing a part of the first semiconductor layer 120 may use a predetermined etching method, but is not limited thereto. The etching method may be a wet etching method or a dry etching method.

Also, a second electrode 172 may be formed on the second semiconductor layer 150.

Meanwhile, the first and second electrodes 172 and 174 may be conductive materials such as In, Co, Si, Ge, Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rh, Ir, W It may include a metal selected from Ti, Ag, Cr, Mo, Nb, Al, Ni, Cu, and WTi, or may include an alloy thereof, may be formed in a single layer or multiple layers, but is not limited thereto. .

3 is a view showing a dopant doping concentration of an electron blocking layer according to an embodiment, FIG. 4 is a view showing a dopant doping concentration of an electron blocking layer according to another embodiment, and FIG. 5 is a view of an electron blocking layer according to another embodiment. 6 is a diagram illustrating a dopant doping concentration, and FIG. 6 is a diagram illustrating a dopant doping concentration of an electron blocking layer, and FIG. 7 is a diagram illustrating a dopant doping concentration of an electron blocking layer according to another embodiment.

3 to 8, various doping concentrations of the electron blocking layer 140 will be described.

The electron blocking layer 140 may be doped with a p-type dopant, and a doping concentration of the first region E1 adjacent to the active layer 130 may be smaller than that of other regions. Here, the p-type dopant may include any one of Mg, Zn, Ca, Sr and Ba. However, the present invention is not limited thereto. As such, when the electron blocking layer 140 is configured, the probability of recombination of electrons and holes can be increased, and leakage current can be prevented. The active layer 130 can be prevented from being damaged by the p-type dopant, and as a result, the light emitting device The light extraction efficiency of 100 can be improved.

In addition, the thickness of the first region E1 is not limited. However, when the thickness of the first region E1 is too thick, the role of blocking electrons from the first semiconductor layer 120 to the second semiconductor layer 150 is reduced. ) May be damaged, the first region E1 may have a thickness of 0.1 to 0.25 times the thickness of the electron blocking layer 140.

The region adjacent to the active layer 130 of the electron blocking layer 140 may be defined as the first region E1, and the region adjacent to the second semiconductor layer 150 may be defined as the fourth region E4. This is defined for convenience, and the present invention is not limited thereto, and the electron blocking layer 140 may have various areas.

Referring to FIG. 3, the doping concentration of the p-type dopant of the electron blocking layer 140 may increase step by step toward the second semiconductor layer 150 in the active layer 130. That is, the electron blocking layer 140 may gradually increase the doping concentration of the p-type dopant while proceeding from the first region E1 to the fourth region E4.

In addition, referring to FIG. 4, the doping concentration of the p-type dopant of the electron blocking layer 140 may increase linearly as the active layer 130 moves toward the second semiconductor layer 150. That is, the electron blocking layer 140 may linearly increase the doping concentration of the p-type dopant while traveling from the first region E1 to the fourth region E4.

Alternatively, referring to FIGS. 5 and 6, the doping concentration of the p-type dopant of the electron blocking layer 140 may increase while decreasing in the direction from the active layer 130 to the second semiconductor layer 150. That is, the doping concentration of the p-type dopant of the electron blocking layer 140 may increase from the first region E1 to the third region E3 and decrease from the fourth region E4. The doping concentration of the p-type dopant of the electron blocking layer 140 may vary stepwise, continuously, linearly or nonlinearly.

Unlike FIGS. 5 and 6, a peak may be formed in the second region E2 of the electron blocking layer 140. However, the present invention is not limited thereto.

Referring to FIG. 7, the doping concentration of the p-type dopant of the electron blocking layer 140 may increase nonlinearly as the active layer 130 moves toward the second semiconductor layer 150. That is, the electron blocking layer 140 may non-linearly increase the doping concentration of the p-type dopant while proceeding from the first region E1 to the fourth region E4.

However, the doping concentration of the p-type dopant of the electron blocking layer 140 is not limited to the above.

Referring to FIG. 8, the first region E1 of the electron blocking layer 140 may have a smaller bandgap than other regions. As such, when the electron blocking layer 140 is configured, the probability of recombination of electrons and holes may be increased and leakage current may be prevented.

The band gap of the electron blocking layer 140 may increase linearly as the active layer 130 moves toward the second semiconductor layer 150. That is, the band gap may increase linearly as the electron blocking layer 140 proceeds from the first region E1 to the fourth region E4.

Referring to FIG. 9, the band gap of the electron blocking layer 140 may increase step by step toward the second semiconductor layer 150 in the active layer 130. That is, as the electron blocking layer 140 progresses from the first region E1 to the fourth region E4, the band gap may increase in stages.

In addition, the band gap of the electron blocking layer 140 may increase linearly as the active layer 130 moves toward the second semiconductor layer 150. That is, the band gap may increase linearly as the electron blocking layer 140 proceeds from the first region E1 to the fourth region E4.

Alternatively, referring to FIG. 10, the band gap of the electron blocking layer 140 may increase in the active layer 130 toward the second semiconductor layer 150 and then decrease again. That is, the band gap of the electron blocking layer 140 may increase from the first region E1 to the third region E3 and decrease from the fourth region E4. The bandgap of the electron blocking layer 140 may vary stepwise, continuously, linearly or nonlinearly.

Unlike in FIG. 10, a peak may be formed in the second region E2 of the electron blocking layer 140. However, the present invention is not limited thereto.

In addition, the band gap of the electron blocking layer 140 may increase nonlinearly as the active layer 130 moves toward the second semiconductor layer 150. That is, the band gap may increase in the non-linearity of the electron blocking layer 140 while traveling from the first region E1 to the fourth region E4.

However, the band gap of the electron blocking layer 140 is not limited to the above.

FIG. 11 is an enlarged partial view of a cross section of an electron blocking layer according to another exemplary embodiment. FIG.

Referring to FIG. 11, the electron blocking layer 140 may include at least a first layer 140a and a second layer 140b, and the first layer 140a and the second layer 140b are alternately stacked. Can be. The first layer 140a may include AlGaN, and the second layer 140b may include GaN. Therefore, when the current is applied, electrons injected into the active layer 130 from the first semiconductor layer 120 may be prevented from flowing to the second semiconductor layer 150 without recombination in the active layer 130, and the active layer 140 ) Can increase the probability of recombination of electrons and holes and prevent leakage current.

12 is a cross-sectional view illustrating a light emitting device according to yet another embodiment.

The light emitting device 200 according to the embodiment includes a support member 210, a first electrode layer 220, a first semiconductor layer 230, an active layer 250, and a second semiconductor layer disposed on the support member 210. The light emitting structure 270 including the 260 and the second electrode layer 282 may be included. An electron blocking layer 240 may be formed between the first semiconductor layer 230 and the active layer 250.

The support member 210 may be formed using a material having a high thermal conductivity, or may be formed of a conductive material. The support member 210 may be formed using a metal material or a conductive ceramic. The support member 210 may be formed as a single layer, and may be formed as a double structure or a multiple structure.

That is, the support member 210 may be formed of any one selected from a metal, for example, Au, Ni, W, Mo, Cu, Al, Ta, Ag, Pt, and Cr, or may be formed of two or more alloys. The above materials can be laminated. In addition, the support member 210 is Si, Ge, GaAs, ZnO, SiC, SiGe, GaN, Ga 2 O 3 It may be implemented as a carrier wafer such as.

Such a support member 210 facilitates the release of heat generated in the light emitting device 200, thereby improving the thermal stability of the light emitting device 200.

A first electrode layer 220 may be formed on the support member 210. The first electrode layer 220 may include an ohmic layer (not shown), a reflective layer (not shown) and a bonding layer (not shown). For example, the first electrode layer 220 may be a structure of an ohmic layer / a reflection layer / a bonding layer, a laminate structure of an ohmic layer / a reflection layer, or a structure of a reflection layer (including an ohmic layer) / a bonding layer. For example, the first electrode layer 220 may be formed by sequentially stacking a reflective layer and an ohmic layer on an insulating layer.

The reflective layer (not shown) may be disposed between an ohmic layer (not shown) and an insulating layer (not shown), and may be formed of a material having excellent reflection characteristics, such as Ag, Ni, Al, Rh, Pd, , Zn, Pt, Au, Hf, and combinations thereof. Alternatively, the metal material and the transparent conductive material such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, . Further, the reflective layer (not shown) can be laminated with IZO / Ni, AZO / Ag, IZO / Ag / Ni, AZO / Ag / Ni and the like. In addition, when the reflective layer (not shown) is formed of a material in ohmic contact with the light emitting structure 270 (eg, the first semiconductor layer 230), the ohmic layer (not shown) may not be formed separately, and the present invention is not limited thereto. I do not.

The ohmic layer (not shown) is in ohmic contact with the bottom surface of the light emitting structure 270, and may be formed in a layer or a plurality of patterns. The ohmic layer (not shown) may be formed of a transparent electrode layer and a metal. For example, ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide) ), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IrO x , RuO x , RuO x / Ni, Ag, Ni / IrO x / Au, and Ni / IrO x / Au / ITO. The ohmic layer (not shown) is for smoothly injecting a carrier into the first semiconductor layer 230 and is not necessarily formed.

In addition, the first electrode layer 220 may include a bonding layer (not shown), wherein the bonding layer (not shown) may be a barrier metal or a bonding metal, for example, Ti, Au, Sn, or Ni. It may include, but is not limited to, at least one of Cr, Ga, In, Bi, Cu, Ag, or Ta.

The light emitting structure 270 may include at least a first semiconductor layer 230, an active layer 250 and a second semiconductor layer 260 and may be formed between the first semiconductor layer 230 and the second semiconductor layer 260 And the active layer 250 may be disposed.

The first semiconductor layer 230 may be formed on the first electrode layer 220. The first semiconductor layer 230 may be implemented as a p-type semiconductor layer doped with a p-type dopant. The p-type semiconductor layer contains a semiconductor material, for example, having a compositional formula of In x Al y Ga 1 -x- y N (0≤x≤1, 0 ≤y≤1, 0≤x + y≤1) GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN and the like may be selected, and p-type dopants such as Mg, Zn, Ca, Sr, and Ba may be doped.

The active layer 250 may be formed on the first semiconductor layer 230. The active layer 250 may be formed of a single or multiple quantum well structure, a quantum-wire structure, a quantum dot structure, or the like using a compound semiconductor material of Group 3-V group elements.

An active layer 250, the well having a composition formula of a quantum well structure formed of a case, for example, In x Al y Ga 1 -x- y N (0≤x≤1, 0 ≤y≤1, 0≤x + y≤1) It may have a single or quantum well structure having a layer and a barrier layer having a compositional formula of In a Al b Ga 1 -a- b N (0≤a≤1, 0≤b≤1, 0≤a + b≤1). have. The well layer may be formed of a material having a band gap smaller than the band gap of the barrier layer.

A conductive clad layer (not shown) may be formed on and / or below the active layer 250. The conductive clad layer (not shown) may be formed of an AlGaN-based semiconductor and may have a band gap larger than that of the active layer 250.

The intermediate layer 240 may be formed between the active layer 250 and the first semiconductor layer 230 and the intermediate layer 240 may be injected into the active layer 250 from the second semiconductor layer 260 An electron blocking layer may be used to prevent the electrons from flowing to the first semiconductor layer 230 without being recombined in the active layer 250. Electrons injected from the second semiconductor layer 260 are injected into the first semiconductor layer 230 without recombination in the active layer 250 because the intermediate layer has a band gap relatively larger than that of the active layer 250 The phenomenon can be prevented. Accordingly, the probability of recombination of electrons and holes in the active layer 250 can be increased and leakage current can be prevented.

Meanwhile, the intermediate layer 240 may have a bandgap larger than the bandgap of the barrier layer included in the active layer 250, and may be formed of a semiconductor layer including Al, such as p-type AlGaN, but is not limited thereto .

A second semiconductor layer 260 may be formed on the active layer 250. The second semiconductor layer 260 may be implemented as an n-type semiconductor layer, and the n-type semiconductor layer may be, for example, In x Al y Ga 1 -xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x A semiconductor material having a compositional formula of + y ≦ 1) may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, and the like, for example, n such as Si, Ge, Sn, Se, Te, etc. Type dopants may be doped.

A second electrode layer 282 electrically connected to the second semiconductor layer 260 may be formed on the second semiconductor layer 260. The second electrode layer 282 may include at least one pad or / . ≪ / RTI > The second electrode layer 282 may be disposed in the center region, the outer region, or the edge region of the upper surface of the second semiconductor layer 260, but the present invention is not limited thereto. The second electrode layer 282 may be disposed in a region other than the upper portion of the second semiconductor layer 260, but the present invention is not limited thereto.

The second electrode layer 282 may be formed of a conductive material such as In, Co, Si, Ge, Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rh, Ir, W, , Mo, Nb, Al, Ni, Cu, and WTi.

Meanwhile, the light emitting structure 270 may include a third semiconductor layer (not shown) having a polarity opposite to that of the second semiconductor layer 260 on the second semiconductor layer 260. Also, the first semiconductor layer 230 may be an n-type semiconductor layer, and the second semiconductor layer 260 may be a p-type semiconductor layer. Accordingly, the light emitting structure layer 270 may include at least one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure.

A light extracting structure 284 may be formed on the upper portion of the light emitting structure 270.

The light extracting structure 284 may be formed on the upper surface of the second semiconductor layer 260 or may be formed on a transparent electrode layer (not shown) after a transparent electrode layer (not shown) is formed on the light emitting structure 270 But not limited to,

The light extracting structure 284 may be formed in a light transmitting electrode layer (not shown), or in a part or all of the upper surface of the second semiconductor layer 260. The light extracting structure 284 may be formed by performing etching on at least one region of the light transmitting electrode layer (not shown) or the upper surface of the second semiconductor layer 260, but is not limited thereto. The etching process includes a wet etching process and / or a dry etching process. As the etching process is performed, the upper surface of the light transmitting electrode layer (not shown) or the upper surface of the second semiconductor layer 260 forms the light extracting structure 284 And may include roughness. The roughness may be irregularly formed in a random size, but is not limited thereto. The roughness may be at least one of a texture pattern, a concave-convex pattern, and an uneven pattern, which is an uneven surface.

The roughness may be formed to have various shapes such as a cylinder, a polygonal column, a cone, a polygonal pyramid, a truncated cone, a polygonal pyramid, and the like, preferably including a horn shape.

Meanwhile, the light extracting structure 284 may be formed by a photoelectrochemical (PEC) method or the like, but is not limited thereto. Light generated from the active layer 250 may be transmitted through a light-transmitting electrode layer (not shown) or a second semiconductor layer (not shown) as the light extracting structure 284 is formed on the upper surface of the light- Can be prevented from being totally reflected and reabsorbed or scattered from the upper surface of the light emitting device 260, thereby contributing to improvement of light extraction efficiency of the light emitting device 200.

Passivation (not shown) may be formed on side and upper regions of the light emitting structure 270, and passivation (not shown) may be formed of an insulating material.

An electron blocking layer 240 may be formed between the active layer 250 and the first semiconductor layer 230. The electron blocking layer 240 may be formed on the active layer 250 Electrons injected into the first semiconductor layer 230 can be prevented from flowing to the first semiconductor layer 230 without being recombined in the active layer 250. The electron blocking layer 240 has a band gap relatively larger than that of the active layer 250 so that electrons injected from the second semiconductor layer 260 are injected into the first semiconductor layer 230 without recombination in the active layer 250. [ Can be prevented. Accordingly, the probability of recombination of electrons and holes in the active layer 240 may be increased, and leakage current may be prevented.

Meanwhile, the electron blocking layer 240 may have a band gap larger than the bandgap of the active layer 250, and may be formed of a semiconductor layer including Al, such as p-type AlGaN or InAlGaN, but is not limited thereto.

The electron blocking layer 240 may be doped with a p-type dopant, and a doping concentration of the first region adjacent to the active layer 250 may be smaller than that of other regions. Here, the p-type dopant may include any one of Mg, Zn, Ca, Sr and Ba. However, the present invention is not limited thereto. When the electron blocking layer 240 is formed as described above, it is possible to increase the probability of recombination of electrons and holes, to prevent a leakage current, to prevent the active layer 250 from being damaged by the p-type dopant, The light extraction efficiency of the light emitting device 200 can be improved.

The first semiconductor layer 230, the active layer 250, the electron blocking layer 240, and the second semiconductor layer 260 may be formed by, for example, metal organic chemical vapor deposition (MOCVD) (CVD), a plasma enhanced chemical vapor deposition (PECVD), a molecular beam epitaxy (MBE), a hydride vapor phase epitaxy (HVPE), a sputtering ), And the like, but the present invention is not limited thereto.

A detailed description of the electron blocking layer 240 is as described above.

13 is a perspective view illustrating a light emitting device package including a light emitting device according to an embodiment, and FIG. 14 is a cross-sectional view illustrating a light emitting device package including a light emitting device according to an embodiment.

13 and 14, the light emitting device package 500 includes a body 510 having a cavity 520, first and second lead frames 540 and 550 mounted on the body 510, and a first one. And a light emitting device 530 electrically connected to the second lead frames 540 and 550, and an encapsulant (not shown) filled in the cavity 520 to cover the light emitting device 530.

The body 510 may be made of a resin material such as polyphthalamide (PPA), silicon (Si), aluminum (Al), aluminum nitride (AlN), liquid crystal polymer (PSG), polyamide 9T (SPS), a metal material, sapphire (Al 2 O 3 ), beryllium oxide (BeO), and a printed circuit board (PCB). The body 510 may be formed by injection molding, etching, or the like, but is not limited thereto.

The inner surface of the body 510 may be formed with an inclined surface. The reflection angle of the light emitted from the light emitting device 530 can be changed according to the angle of the inclined surface, and thus the directivity angle of the light emitted to the outside can be controlled.

Concentration of light emitted to the outside from the light emitting device 530 increases as the directivity angle of light decreases. Conversely, as the directivity angle of light increases, the concentration of light emitted from the light emitting device 530 decreases.

The shape of the cavity 520 formed in the body 510 may be circular, rectangular, polygonal, elliptical, or the like, and may have a curved shape, but the present invention is not limited thereto.

The light emitting device 530 is mounted on the first lead frame 540 and may be, for example, a light emitting device emitting light of red, green, blue, white, or UV (ultraviolet) light emitting device emitting ultraviolet light. But it is not limited thereto. In addition, one or more light emitting elements 530 may be mounted.

The light emitting device 530 may be a horizontal type or a vertical type formed on the upper or lower surface of the light emitting device 530 or a flip chip Applicable.

The encapsulant (not shown) may be filled in the cavity 520 to cover the light emitting device 530.

The encapsulant (not shown) may be formed of silicon, epoxy, or other resin material. The encapsulant may be filled in the cavity 520 and ultraviolet or thermally cured.

In addition, the encapsulant (not shown) may include a phosphor, and the phosphor may be selected to be a wavelength of light emitted from the light emitting device 530 so that the light emitting device package 500 may emit white light.

The phosphor may be one of a blue light emitting phosphor, a blue light emitting phosphor, a green light emitting phosphor, a sulfur green light emitting phosphor, a yellow light emitting phosphor, a yellow red light emitting phosphor, an orange light emitting phosphor, and a red light emitting phosphor depending on the wavelength of light emitted from the light emitting device 530 Can be applied.

That is, the phosphor may be excited by the light having the first light emitted from the light emitting device 530 to generate the second light. For example, when the light emitting element 530 is a blue light emitting diode and the phosphor is a yellow phosphor, the yellow phosphor may be excited by blue light to emit yellow light, and blue light and blue light emitted from the blue light emitting diode As the excited yellow light is mixed, the light emitting device package 500 can provide white light.

Similarly, when the light emitting element 530 is a green light emitting diode, the magenta phosphor or the blue and red phosphors are mixed, and when the light emitting element 530 is a red light emitting diode, the cyan phosphors or the blue and green phosphors are mixed For example.

Such a fluorescent material may be a known fluorescent material such as a YAG, TAG, sulfide, silicate, aluminate, nitride, carbide, nitridosilicate, borate, fluoride or phosphate.

The first and second lead frames 540 and 550 may be formed of a metal material such as titanium, copper, nickel, gold, chromium, tantalum, (Pt), tin (Sn), silver (Ag), phosphorus (P), aluminum (Al), indium (In), palladium (Pd), cobalt (Co), silicon (Si), germanium , Hafnium (Hf), ruthenium (Ru), and iron (Fe). Also, the first and second lead frames 540 and 550 may be formed to have a single layer or a multilayer structure, but the present invention is not limited thereto.

The first and second lead frames 540 and 550 are separated from each other and electrically separated from each other. The light emitting element 530 is mounted on the first and second lead frames 540 and 550 and the first and second lead frames 540 and 550 are in direct contact with the light emitting element 530, And may be electrically connected through a conductive material such as a conductive material. In addition, the light emitting device 530 may be electrically connected to the first and second lead frames 540 and 550 through wire bonding, but is not limited thereto. Accordingly, when power is supplied to the first and second lead frames 540 and 550, power may be applied to the light emitting device 530. Meanwhile, a plurality of lead frames (not shown) may be mounted in the body 510 and each lead frame (not shown) may be electrically connected to the light emitting device 530, but is not limited thereto.

FIG. 15 is a perspective view illustrating a lighting apparatus including a light emitting device package according to an embodiment, and FIG. 16 is a cross-sectional view illustrating a C-C 'cross section of the lighting apparatus of FIG. 15.

15 and 16, the lighting device 600 may include a body 610, a cover 630 fastened to the body 610, and a closing cap 650 located at both ends of the body 610. have.

A light emitting device module 640 is coupled to a lower surface of the body 610. The body 610 is electrically conductive so that heat generated from the light emitting device package 644 can be emitted to the outside through the upper surface of the body 610. [ And a metal material having an excellent heat dissipation effect.

The light emitting device package 644 may be mounted on the PCB 642 in a multi-color, multi-row manner to form an array. The light emitting device package 644 may be mounted at equal intervals or may be mounted with various spacings as required. As the PCB 642, MPPCB (Metal Core PCB) or FR4 material PCB can be used.

Since the light emitting device package 644 may have an improved heat dissipation function including an extended lead frame (not shown), reliability and efficiency of the light emitting device package 644 may be improved, and the light emitting device package 622 and the light emitting device may be improved. The service life of the lighting device 600 including the device package 644 may be extended.

The cover 630 may be formed in a circular shape so as to surround the lower surface of the body 610, but is not limited thereto.

The cover 630 protects the internal light emitting element module 640 from foreign substances or the like. The cover 630 may include diffusion particles so as to prevent glare of light generated in the light emitting device package 644 and uniformly emit light to the outside, and may include at least one of an inner surface and an outer surface of the cover 630 A prism pattern or the like may be formed on one side. Further, the phosphor may be applied to at least one of the inner surface and the outer surface of the cover 630.

Since the light generated in the light emitting device package 644 is emitted to the outside through the cover 630, the cover 630 must have a high light transmittance and sufficient heat resistance to withstand the heat generated in the light emitting device package 644 The cover 630 is preferably formed of a material including polyethylene terephthalate (PET), polycarbonate (PC), polymethyl methacrylate (PMMA), or the like .

The finishing cap 650 is located at both ends of the body 610 and can be used to seal the power supply unit (not shown). In addition, the finishing cap 650 is provided with the power supply pin 652, so that the lighting apparatus 600 according to the embodiment can be used immediately without a separate device on the terminal from which the conventional fluorescent lamp is removed.

17 is an exploded perspective view of a liquid crystal display including the light emitting device according to the embodiment.

FIG. 17 illustrates an edge-light method, and the LCD 700 may include a liquid crystal display panel 710 and a backlight unit 770 for providing light to the liquid crystal display panel 710.

The liquid crystal display panel 710 can display an image using light provided from the backlight unit 770. The liquid crystal display panel 710 may include a color filter substrate 712 and a thin film transistor substrate 714 facing each other with a liquid crystal therebetween.

The color filter substrate 712 can realize the color of an image to be displayed through the liquid crystal display panel 710.

The thin film transistor substrate 714 is electrically connected to a printed circuit board 718 on which a plurality of circuit components are mounted via a driving film 717. The thin film transistor substrate 714 may apply a driving voltage provided from the printed circuit board 718 to the liquid crystal in response to a driving signal provided from the printed circuit board 718. [

The thin film transistor substrate 714 may include a thin film transistor and a pixel electrode formed as a thin film on another substrate of a transparent material such as glass or plastic.

The backlight unit 770 includes a light emitting element module 720 that outputs light, a light guide plate 730 that changes the light provided from the light emitting element module 720 into a surface light source and provides the light to the liquid crystal display panel 710, A plurality of films 752, 766, and 764 for uniformly distributing the luminance of light provided from the light guide plate 730 and improving vertical incidence and a reflective sheet (reflective plate) for reflecting light emitted to the rear of the light guide plate 730 to the light guide plate 730 747).

The light emitting device module 720 may include a PCB substrate 722 for mounting a plurality of light emitting device packages 724 and a plurality of light emitting device packages 724 to form an array. In this case, the reliability of the mounting of the bent light emitting device package 724 can be improved.

Meanwhile, the backlight unit 770 includes a diffusion film 766 that diffuses light incident from the light guide plate 730 toward the liquid crystal display panel 710, and a prism film 752 that concentrates the diffused light to improve vertical incidence. It may be configured as), and may include a protective film 764 for protecting the prism film 750.

18 is an exploded perspective view of a liquid crystal display including the light emitting device according to the embodiment. However, the parts shown and described in FIG. 17 will not be repeatedly described in detail.

18 is a direct view, the liquid crystal display device 800 may include a liquid crystal display panel 810 and a backlight unit 870 for providing light to the liquid crystal display panel 810.

Since the liquid crystal display panel 810 is the same as that described with reference to FIG. 17, a detailed description thereof will be omitted.

The backlight unit 870 includes a plurality of light emitting element modules 823, a reflective sheet 824, a lower chassis 830 in which the light emitting element module 823 and the reflective sheet 824 are accommodated, And a plurality of optical films 860. The diffuser plate 840 and the plurality of optical films 860 are disposed on the light guide plate 840. [

LED Module 823 A plurality of light emitting device packages 822 and a plurality of light emitting device packages 822 may be mounted to include a PCB substrate 821 to form an array.

The reflective sheet 824 reflects light generated from the light emitting device package 822 in a direction in which the liquid crystal display panel 810 is positioned, thereby improving light utilization efficiency.

Light generated in the light emitting element module 823 is incident on the diffusion plate 840 and an optical film 860 is disposed on the diffusion plate 840. The optical film 860 may include a diffusion film 866, a prism film 850, and a protective film 864.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

Claims (13)

  1. A light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; And
    An electron blocking layer having a larger bandgap between the active layer and the second semiconductor layer than the active layer;
    The electron blocking layer,
    doped with p-type dopant, the doping concentration of the first region adjacent to the active layer is less than the doping concentration of the other region,
    The first region has a smaller band gap than the other region.
  2. The method of claim 1,
    The first semiconductor layer is doped with an n-type dopant,
    And the second semiconductor layer is doped with a p-type dopant.
  3. The method of claim 1,
    The p-type dopant comprises at least one of Mg, Zn, Ca, Sr and Ba.
  4. The method of claim 1,
    And a doping concentration of the p-type dopant of the electron blocking layer increases linearly from the active layer toward the second semiconductor layer.
  5. The method of claim 1,
    The doping concentration of the p-type dopant of the electron blocking layer increases in stages toward the second semiconductor layer in the active layer.
  6. The method of claim 1,
    And a doping concentration of the p-type dopant of the electron blocking layer increases nonlinearly from the active layer toward the second semiconductor layer.
  7. The method of claim 1,
    The doping concentration of the p-type dopant of the electron blocking layer increases in the direction of the second semiconductor layer in the active layer and then decreases again.
  8. The method of claim 1,
    The active layer includes at least one well layer and at least one barrier layer having a larger bandgap than the well layer.
  9. The method of claim 1,
    The thickness of the first region is 0.1 to 0.25 times the thickness of the electron blocking layer.
  10. The method of claim 1,
    The electron blocking layer includes AlGaN or InAlGaN.
  11. The method of claim 1,
    The first region has a smaller band gap than the other region.
  12. The method of claim 1,
    The electron blocking layer,
    At least a first layer and a second layer stacked alternately,
    The first layer comprises AlGaN,
    The second layer is a light emitting device comprising a GaN layer.
  13. The method of claim 1,
    A first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer.
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015034865A1 (en) * 2013-09-03 2015-03-12 Sensor Electronic Technology, Inc. Optoelectronic device with modulation doping
US9312439B2 (en) 2014-01-09 2016-04-12 Samsung Electronics Co., Ltd. Semiconductor light emitting device
WO2016081555A1 (en) * 2014-11-18 2016-05-26 Sensor Electronic Technology, Inc. Optoelectronic device with modulation doping
US9647168B2 (en) 2013-09-03 2017-05-09 Sensor Electronic Technology, Inc. Optoelectronic device with modulation doping
EP3413359A4 (en) * 2016-02-01 2019-03-13 Panasonic Corporation Ultraviolet light emitting element
WO2019125049A1 (en) * 2017-12-22 2019-06-27 엘지이노텍 주식회사 Semiconductor device
US10347789B2 (en) 2014-12-22 2019-07-09 Lg Innotek Co., Ltd. Light emitting device and light emitting device package having same

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015034865A1 (en) * 2013-09-03 2015-03-12 Sensor Electronic Technology, Inc. Optoelectronic device with modulation doping
US10069034B2 (en) 2013-09-03 2018-09-04 Sensor Electronic Technology, Inc. Optoelectronic device with modulation doping
CN105518878A (en) * 2013-09-03 2016-04-20 传感器电子技术股份有限公司 Optoelectronic device with modulation doping
US9647168B2 (en) 2013-09-03 2017-05-09 Sensor Electronic Technology, Inc. Optoelectronic device with modulation doping
US9653631B2 (en) 2013-09-03 2017-05-16 Sensor Electronic Technology, Inc. Optoelectronic device with modulation doping
US9941443B2 (en) 2014-01-09 2018-04-10 Samsung Electronics Co., Ltd. Semiconductor light emitting device
US9312439B2 (en) 2014-01-09 2016-04-12 Samsung Electronics Co., Ltd. Semiconductor light emitting device
WO2016081555A1 (en) * 2014-11-18 2016-05-26 Sensor Electronic Technology, Inc. Optoelectronic device with modulation doping
US10347789B2 (en) 2014-12-22 2019-07-09 Lg Innotek Co., Ltd. Light emitting device and light emitting device package having same
EP3413359A4 (en) * 2016-02-01 2019-03-13 Panasonic Corporation Ultraviolet light emitting element
WO2019125049A1 (en) * 2017-12-22 2019-06-27 엘지이노텍 주식회사 Semiconductor device

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