KR102200076B1 - Spherical phosphor, light emitting device package and lighting apparatus including the same - Google Patents

Abstract

The embodiment provides a spherical phosphor including a spherical inorganic particle and at least one fluorescent film layer disposed around the spherical phosphor, and a light emitting device package including the same, so that a high luminous flux and uniform white light may be realized.

Description

Spherical phosphor, a light emitting device package and a lighting device including the same TECHNICAL FIELD OF THE INVENTION

The embodiment relates to a spherical phosphor including a plurality of phosphor layer layers, a light emitting device package including the same, and a lighting device.

Light-emitting diodes such as light emitting diodes and laser diodes using Ⅲ-Ⅴ or Ⅱ-VI compound semiconductor materials of semiconductors are developed in thin film growth technology and device materials to develop various colors such as red, green, blue and ultraviolet rays. It is possible to implement white light with good efficiency by using fluorescent materials or by combining colors, and has advantages of low power consumption, semi-permanent life, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent and incandescent lamps. Have.

The method of implementing white light is divided into a single-chip type of combining a fluorescent material on a blue or ultraviolet (UV) light emitting diode chip, and a multi-chip type of manufacturing and combining them to obtain white light.

In the case of a multi-chip type, there is a method of manufacturing by combining three types of chips (RGB (Red, Green, Blue)), and this means that the operating voltage of each chip is uneven or the output of each chip is There is a problem that the color coordinates are different depending on the use.

In addition, in the case of implementing white light with a single chip, light emitted from a blue LED and a method of obtaining white light by excitation of at least one phosphor using the same are used.

However, in the implementation of white light using such a phosphor composition, it is difficult to uniformly distribute the phosphor on a chip because the size and shape of the phosphors used by mixing are not uniform, and due to this problem, there is a problem that the uniformity of white light is lowered.

In addition, when phosphors emitting light of different wavelength ranges are mixed, excitation light may be lost by other phosphors, thereby reducing luminous efficiency.

The embodiment is to provide a fluorescent substance including a plurality of fluorescent film layers and having a spherical shape, and a light emitting device package including the same.

Examples include spherical inorganic particles; And at least one fluorescent film layer surrounding the inorganic particles. It provides a spherical phosphor comprising a.

The spherical phosphor may further include a core phosphor layer disposed inside the inorganic particles, and the core phosphor layer may include a fluorine-based red phosphor.

In addition, at least one phosphor particle may be included in the inorganic particle.

The inorganic particles may include at least one of SiO ₂ , TiO ₂ and polystyrene particles, and the inorganic particles may have a diameter of 0.1 μm to 200 μm.

The at least one phosphor layer may include at least one of red, green, and yellow phosphors.

The at least one fluorescent film layer may include a first fluorescent film layer having a first thickness; And a second fluorescent film layer disposed surrounding the first fluorescent film layer and having a second thickness. Including, the first phosphor included in the first phosphor layer and the second phosphor included in the second phosphor layer may have different emission wavelengths.

The first fluorescent film layer may include at least one of a green or yellow phosphor, and the second fluorescent film layer may include a red phosphor.

The first fluorescent layer may be excited by light in a blue or ultraviolet wavelength region to emit light having an emission peak of 450 nm to 550 nm.

The second fluorescent layer may be excited by light in a blue or ultraviolet wavelength region to emit light having an emission peak of 600 nm to 700 nm.

The first thickness and the second thickness may be the same.

The at least one phosphor layer is excited by blue or ultraviolet light, and the spherical phosphor may emit white light.

Another embodiment is a light emitting device; And a spherical phosphor of the embodiment excited by light emitted from the light emitting device. A light emitting device package including a can be provided.

The light emitting device package may include a plurality of spherical phosphors, and the plurality of spherical phosphors may have the same size.

The light emitting device may emit light in a blue or ultraviolet wavelength region.

Another embodiment provides a lighting device including the embodiment of the light emitting device package described above as a light source.

In the case of the spherical phosphor and the light emitting device package including the same according to the embodiment, white light having excellent uniformity may be realized by including a plurality of phosphor film layers in one phosphor particle and making the phosphor particles have a spherical shape.

1 is a diagram showing an embodiment of a spherical phosphor,
2 is a cross-sectional view of an embodiment of the spherical phosphor of FIG. 1,
3 to 4 are cross-sectional views of a spherical phosphor according to an embodiment,
5 is a view showing an embodiment of a light emitting device package,
6 is a diagram showing an embodiment of a light emitting device.

Hereinafter, embodiments of the present invention capable of realizing the above object will be described with reference to the accompanying drawings.

In the description of the embodiment according to the present invention, in the case where it is described as being formed in "on or under" of each element, the upper (upper) or lower (lower) (on or under) includes both elements in direct contact with each other or in which one or more other elements are indirectly formed between the two elements. In addition, when expressed as "on or under", it may include not only an upward direction but also a downward direction based on one element.

In addition, relational terms such as “first” and “second”, “upper/upper/upper” and “lower/lower/below” used hereinafter refer to any physical or logical relationship or order between such entities or elements. It may be used only to distinguish one entity or element from another entity or element, without necessarily requiring or implying.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. Also, the size of each component does not fully reflect the actual size.

1 is a view showing an embodiment of a spherical phosphor (Spherical Phosphor).

1 is a diagram schematically showing a three-dimensional shape of a spherical phosphor, and shows a cross-section when a part of the outer area except for the spherical inorganic particles 101 disposed at the center of the spherical phosphor is cut.

The spherical phosphor 100 according to an exemplary embodiment may include spherical inorganic particles 101 and at least one fluorescent film layer 103 and 105 surrounding the inorganic particles.

Referring to the illustration of FIG. 1, at least one of the fluorescent film layers 103 and 105 may be formed by enclosing the spherical inorganic particles 101 and sequentially stacking them.

Meanwhile, FIG. 2 may be a view showing a cross section of the spherical phosphor of the embodiment shown in FIG. 1.

1 to 2, the inorganic particle 101 may be located at the center of the spherical phosphor, has a sphere shape, and may be a support layer for coating the fluorescent film layers 103 and 105. .

The spherical inorganic particles 101 may use inorganic materials having high reflectivity. The higher the reflectance of the inorganic particles is, the higher the ratio of reflecting light incident into the phosphor and transmitting it to the phosphor layer, thereby improving luminous efficiency.

The inorganic particles may include at least one of SiO ₂ (Silicone Dioxide), TiO ₂ (Titanium Dioxide), and PS (Poly Styrene). SiO _{2 ,} TiO ₂ Alternatively, in the case of the spherical phosphor including the PS inorganic particles, light incident on the inorganic particles may be scattered, so that the light emitted from the spherical phosphor may be uniformly dispersed.

In FIG. 2, the diameter d1 of the spherical inorganic particles 101 may be 0.1 μm to 200 μm. When the diameter (d1) of the inorganic particles is less than 0.1 μm, it may be difficult to uniformly form the fluorescent film layer on the outer surface of the inorganic particles, and when the diameter (d1) of the inorganic particles is larger than 200 μm, the light emitting device described later Application may be difficult in embodiments such as packages.

For example, the diameter of the spherical inorganic particles may be 5 μm to 50 μm.

1 to 2, at least one fluorescent film layer 103 and 105 may be disposed surrounding the spherical inorganic particle 101.

The fluorescent film layers 103 and 105 may be formed by enclosing the inorganic particles 101 and forming a coating layer, and the shape of the fluorescent substance on which the fluorescent film layer is formed may be determined according to the shape of the inorganic particles serving as the core. The phosphor including the fluorescent film layer formed by covering it may have a spherical shape.

The phosphor layers 103 and 105 may be formed by including at least one of red, green, and yellow phosphors.

The phosphors included in the phosphor layers 103 and 105 may be YAG-based LuAG-based, silicate-based, nitride-based, or fluorine-based phosphors, but the type of phosphor is not limited thereto.

For example, the red phosphor is A ₂ Si ₅ N ₈ :Eu ^{2 +} (here, A is at least one of Ca, Sr, and Ba), CaAlSiN ₃ :Eu ^{2 +} , SrCaSi ₅ N ₈ :Eu ^{2 +} or K ₂ MF ₆ :Mn ^{4 +} (here, M is at least one of Si, Ge, and Ti) and the like may be included.

In addition, the yellow phosphor may include (Ca, Sr, Ba) ₂ SiO ₄ :Eu ^{2 +} , Sr ₃ SiO ₅ :Eu ^{2 +} or Y ₃ Al ₅ O1 ₂ :Ce ^{3 +} , and the green phosphor may include Ba ₃ Si ₆ O ₁₂ N ₂ :Eu ^{2 +} , β-SiAlON:Eu ^{2 +} , Ca-α-SiAlON:Yb, CaSi ₂ O ₂ N ₂ :Eu ^{2 +} or Lu ₃ Al ₅ O ₁₂ :Ce ^{3 +} It may include.

However, the type of phosphor included in the phosphor layer of the embodiment is not limited to the disclosed type, and a phosphor material emitting light in a green or yellow wavelength region or a phosphor material emitting light in a red wavelength region may be included in the embodiment. .

The spherical phosphor of the embodiment may include a plurality of fluorescent film layers.

Referring to FIG. 2, the plurality of fluorescent film layers may include a first fluorescent film layer 103 having a first thickness t1 and a second fluorescent film layer 105 having a second thickness t2.

The second fluorescent film layer 105 may surround the first fluorescent film layer 103 and may be formed outside the first fluorescent film layer 103.

The first thickness t1 is the thickness of the first fluorescent film layer 103 surrounding the inorganic particles 101, and may indicate a thickness at which the first fluorescent film layer is formed from the outside of the inorganic particles.

The second thickness t2 may indicate the thickness of the second fluorescent film layer formed outside the first fluorescent film layer. The second thickness t2 may indicate a thickness at which the second fluorescent film layer 105 is formed from the outer periphery of the first fluorescent film layer 103.

In an embodiment of a spherical phosphor having a plurality of phosphor layers, the first phosphor layer 103 disposed adjacent to the inorganic particles 101 may include a green or yellow phosphor.

In addition, the second fluorescent film layer 105 surrounding the first fluorescent film layer 103 and disposed outside the first fluorescent film layer 103 may include a red phosphor.

The first fluorescent layer 103 may be excited by light in a blue or ultraviolet wavelength region to emit light having a central wavelength of 450 nm to 550 nm.

In addition, the second phosphor layer 105 may be excited by light in a blue or ultraviolet wavelength region to emit light having a central wavelength of 600 nm to 700 nm.

Meanwhile, when the first phosphor layer 103 is a green or yellow phosphor layer and the second phosphor layer 105 is a red phosphor layer, the red phosphor of the second phosphor layer is a green or yellow wavelength emitted from the first phosphor layer. It can also be excited and emit light by the light of the region.

The thickness t1 of the first fluorescent film layer and the thickness t2 of the second fluorescent film layer may be different from each other according to the color to be implemented in the spherical phosphor of the embodiment.

For example, in order to implement warm white light with a low color temperature, it may be advantageous that the thickness of the fluorescent film layer including the red phosphor among at least one fluorescent film layer is thicker than the thickness of the fluorescent film layer including the green or yellow phosphor. .

That is, when the first phosphor layer 103 includes a green or yellow phosphor and the second phosphor layer 105 includes a red phosphor, t1≦t2 may be achieved.

On the contrary, in order to realize cool white light having a high color temperature, the thickness of the fluorescent film layer including the green or yellow phosphor among at least one fluorescent film layer is thicker than the thickness of the fluorescent film layer including the red phosphor, which is the remaining fluorescent film layer. It can be advantageous.

For example, when the first phosphor layer 103 includes a green or yellow phosphor and the second phosphor layer 105 includes a red phosphor, it may be t1≥t2.

In addition, in the embodiment illustrated in FIG. 2, the first thickness t1, which is the thickness of the first fluorescent film layer, and the second thickness t2, which is the thickness of the second fluorescent film layer, may be the same.

As a method of manufacturing a spherical phosphor according to an exemplary embodiment, a method of coating a phosphor material on spherical inorganic particles may be used.

For example, spherical SiO ₂ particles may be prepared by the Stober method using TEOS (tetraethylorthosilicate), NH ₄ OH (28 wt%), ethanol and distilled water. Spherical SiO ₂ particles manufactured by the Stover method may have a uniform particle size.

Next, the prepared spherical SiO ₂ particles are dispersed in a mixed solution containing the starting material of the phosphor material to be coated. At this time, the mixed solution may contain sodium citrate, polyethylene glycol (PEG), and distilled water. In addition, the SiO ₂ particles may be uniformly dispersed in the mixed solution by sonication.

The mixed solution of the phosphor material including SiO ₂ particles may be reacted by stirring for about 3 hours at a temperature of 30° C. to 100° C., and then subjected to a heat treatment process at a high temperature, and then a spherical phosphor may be prepared.

In this case, the high-temperature heat treatment process may be performed as a process of drying at 100° C. for 1 hour, followed by post heat treatment for 1 hour to 5 hours at a temperature condition of 600° C. to 1500° C. in an air and mixed gas atmosphere.

When the spherical phosphor of one embodiment is manufactured by the above-described manufacturing method, the particle size of the spherical phosphor can be adjusted by controlling the size of the inorganic particles used, so that the spherical phosphor particles having a required size can be easily manufactured.

3 to 4 are views showing other embodiments of a spherical phosphor.

Hereinafter, in the description of the embodiments of FIGS. 3 to 4, contents overlapping with the embodiment of the spherical phosphor of FIG. 2 will not be described again, and the differences will be mainly described.

Referring to FIG. 3, the spherical phosphor 100b of an embodiment may further include a core phosphor layer 107 disposed inside the inorganic particles in the embodiment of FIG. 2.

In the spherical phosphor 100b of the embodiment of FIG. 3, a core phosphor layer 107 is disposed in a central region of a sphere, an inorganic particle layer 101 is disposed surrounding the core phosphor layer 107, and an inorganic particle layer 101 is surrounded by a sphere. At least one phosphor layer 103 and 105 may be disposed as an outer layer.

In the embodiment of FIG. 3, the inorganic particles 101 may be in the form of a capsule.

For example, the inorganic particles 101 may have a hollow spherical shape, and the core phosphor layer 107 may be formed by inserting a phosphor material into the interior of the inorganic particles 101, that is, in a region corresponding to the core.

The core fluorescent layer 107 disposed inside the inorganic particles may be protected by the inorganic particle layer 101 corresponding to the shell region.

The core phosphor layer 107 may include any one of red, green, and yellow phosphors described above.

The phosphor included in the core phosphor layer 107 may be a phosphor having a property that is vulnerable to an external environment such as moisture, for example, the core phosphor layer 107 may include a fluorine-based red phosphor, The fluorine-based red phosphor may be represented by the formula K ₂ MF ₆ :Mn ^{4 +} (here, M is at least one of Si, Ge, and Ti).

Since the K ₂ MF ₆ :Mn ^{4 +} phosphor is placed inside the spherical film formed by the inorganic particles, the problem of reducing reliability due to moisture or light that may occur by using the K ₂ MF ₆ :Mn ⁴⁺ phosphor is improved. It can have an effect that can be done.

4 is a cross-sectional view of a spherical phosphor of another embodiment.

In the spherical phosphor 100c according to the exemplary embodiment illustrated in FIG. 4, the phosphor particles 109 may be dispersed and disposed in the spherical inorganic particles 101.

The phosphor particles 109 may be green or yellow phosphors or red phosphor particles.

For example, the phosphor particles 109 may be fluorine-based red phosphor particles, and in this case, the probability of exposure of the phosphor particles 109 to moisture or light is reduced by being dispersed and disposed in the inorganic particles 101. For example, it may have an effect of improving the problem of reliability degradation that may occur in the fluorine-based red phosphor.

The fluorine-based red phosphor may be K ₂ MF ₆ :Mn ^{4 +} (here, M is at least one of Si, Ge, and Ti).

Since the spherical phosphors 100a to 100c of the above-described embodiments have a spherical shape, light emission may occur uniformly throughout the phosphor, and may include a plurality of phosphor materials having different emission wavelength regions in one phosphor. , By itself, uniform white light can be realized.

Meanwhile, since a plurality of phosphor materials are included in one phosphor particle, light loss between phosphor materials can be minimized compared to a case where different phosphor particles are respectively disposed, so that the light flux can be increased.

In addition, since the size of the produced spherical fluorescent substance can be adjusted according to the size of the inorganic particles included in the center of the spherical fluorescent substance, a fluorescent substance having a desired particle size can be manufactured, and a fluorescent substance having a uniform particle size can be implemented.

5 is a view showing an embodiment of a light emitting device package.

An embodiment of the light-emitting device package 200 may include the light-emitting device 110 and the spherical phosphors 100a to 100c of the above-described embodiment excited by light emitted from the light-emitting device.

In the embodiment of FIG. 5, light emitted from the light emitting device 110 excites the spherical phosphor 100, and the fluorescent film layer of the spherical phosphor 100 is excited by the light emitted from the light emitting device to transmit wavelength-converted light. Can emit light.

Referring to FIG. 5, the light emitting device package 200 according to the embodiment may include a package body 130 having a cavity, a light emitting device 110 disposed on the bottom of the cavity, and the package body 130 Lead frames 142 and 144 for electrical connection with the light emitting device 110 may be fixed and disposed in the light emitting device 110.

In addition, the light-emitting element 110 may be disposed on the bottom surface of the cavity within the cavity, the molding part 150 may be disposed surrounding the light-emitting element 110 in the cavity, and the molding part 150 may have a spherical phosphor. 100 may be included.

The package body 130 may be formed of a silicon material, a synthetic resin material, or a metal material, and may be made of a ceramic material having excellent thermal conductivity.

The package body 130 may include lead frames 142 and 144 for electrical connection with the light emitting device 110.

The lead frame may be formed including the first lead frame 142 and the second lead frame 144, and may be formed by being fixed to the package body 130.

The first lead frame 142 and the second lead frame 144 are electrically separated from each other and may supply current to the light emitting element 110. In addition, the first lead frame 142 and the second lead frame 144 may reflect light generated from the light emitting element 110 to increase light efficiency, and heat generated from the light emitting element 110 to the outside. It can also be discharged.

The light emitting device 110 may be disposed in the cavity, and may be disposed on the package body 130 or on the first lead frame 142 or the second lead frame 144. The arranged light emitting device 110 may be a horizontal light emitting device in addition to a vertical light emitting device.

The light-emitting element 110 may include a light-emitting diode or the like.

6 is a view showing an embodiment of the light emitting device 110, the light emitting device 110 includes a support substrate 70, a light emitting structure 20, an ohmic layer 40, a first electrode 80. I can.

The light emitting structure 20 includes a first conductivity type semiconductor layer 22, an active layer 24, and a second conductivity type semiconductor layer 26.

The first conductivity type semiconductor layer 22 may be implemented as a compound semiconductor such as Group III-V or Group II-VI, and may be doped with a first conductivity type dopant. The first conductivity type semiconductor layer 22 is a semiconductor material having a composition formula of Al _x In _y Ga _(1-xy) N (0≤x≤1, 0≤y≤1, 0≤x+y≤1), AlGaN , GaN, InAlGaN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP may be formed of any one or more.

When the first conductivity-type semiconductor layer 22 is an n-type semiconductor layer, the first conductivity-type dopant may include an n-type dopant such as Si, Ge, Sn, Se, and Te. The first conductivity type semiconductor layer 22 may be formed as a single layer or multiple layers, but is not limited thereto.

The active layer 24 is disposed between the first conductivity type semiconductor layer 22 and the second conductivity type semiconductor layer 26, and is a single well structure, a multiple well structure, a single quantum well structure, and a multiple quantum well. It may include any one of a (MQW: Multi Quantum Well) structure, a quantum dot structure, or a quantum line structure.

The active layer 24 is a well layer and a barrier layer, such as AlGaN/AlGaN, InGaN/GaN, InGaN/InGaN, AlGaN/GaN, InAlGaN/GaN, GaAs (InGaAs), using a compound semiconductor material of group III-V element. /AlGaAs, GaP (InGaP) / AlGaP may be formed in any one or more pair structure, but is not limited thereto. The well layer may be formed of a material having an energy band gap smaller than that of the barrier layer.

The second conductivity type semiconductor layer 26 may be formed of a semiconductor compound. The second conductivity type semiconductor layer 26 may be implemented as a compound semiconductor such as Group III-V or Group II-VI, and may be doped with a second conductivity type dopant. The second conductivity type semiconductor layer 26 is, for example, a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) , AlGaN, GaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP may be formed of any one or more, for example, the second conductivity type semiconductor layer 26 is made of Al _x Ga _(1-x) N I can.

When the second conductivity-type semiconductor layer 26 is a p-type semiconductor layer, the second conductivity-type dopant may be a p-type dopant such as Mg, Zn, Ca, Sr, Ba, or the like. The second conductivity type semiconductor layer 26 may be formed as a single layer or multiple layers, but is not limited thereto.

The surface of the first conductivity type semiconductor layer 22 may form a pattern to improve light extraction efficiency. In addition, the first electrode 80 may be disposed on the surface of the first conductive type semiconductor layer 22, and although not shown, the surface of the first conductive type semiconductor layer 22 on which the first electrode 80 is disposed May not form a pattern. The first electrode 80 may include at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (Au), and may be formed in a single layer or multilayer structure. have.

A passivation layer 90 may be formed around the light emitting structure 20. The passivation layer 90 may be made of an insulating material, and the insulating material may be made of a non-conductive oxide or nitride. For example, the passivation layer 90 may be formed of a silicon oxide (SiO ₂ ) layer, an oxide nitride layer, and an aluminum oxide layer.

A second electrode may be disposed under the light emitting structure 20, and the ohmic layer 40 and the reflective layer 50 may serve as second electrodes. GaN is disposed under the second conductivity type semiconductor layer 26 so that current or holes can be smoothly supplied to the second conductivity type semiconductor layer 26.

The ohmic layer 40 may have a thickness of about 200 angstroms (Å). The ohmic layer 40 includes ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide). ), AZO(aluminum zinc oxide), ATO(antimony tin oxide), GZO(gallium zinc oxide), IZON(IZO Nitride), AGZO(Al-Ga ZnO), IGZO(In-Ga ZnO), ZnO, IrOx, RuOx , NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, It may be formed by including at least one of Au and Hf, but is not limited to these materials.

The reflective layer 50 includes molybdenum (Mo), aluminum (Al), silver (Ag), nickel (Ni), platinum (Pt), rhodium (Rh), or an alloy containing Al, Ag, Pt, or Rh. It may be made of a metal layer. The reflective layer 50 can effectively reflect light generated from the active layer 24 to greatly improve light extraction efficiency of the semiconductor device.

The support substrate 70 may be formed of a conductive material such as a metal or a semiconductor material. Metal having excellent electrical conductivity or thermal conductivity can be used, and since it must be able to sufficiently dissipate heat generated during operation of a semiconductor device, it can be formed of a material having high thermal conductivity (eg, metal).

For example, it may be made of a material selected from the group consisting of molybdenum (Mo), silicon (Si), tungsten (W), copper (Cu), and aluminum (Al), or an alloy thereof, and gold (Au ), copper alloy (Cu Alloy), nickel (Ni), copper-tungsten (Cu-W), carrier wafer (e.g., GaN, Si, Ge, GaAs, ZnO, SiGe, SiC, SiGe, Ga ₂ O ₃ It may be any one of) and the like may be optionally included.

The support substrate 70 is 50 μm to 200 in order to have a mechanical strength sufficient to separate it into separate chips through a scribing process and a breaking process without causing warpage to the entire nitride semiconductor. It can be made to a thickness of ㎛.

The bonding layer 60 combines the reflective layer 50 and the support substrate 70, including gold (Au), tin (Sn), indium (In), aluminum (Al), silicon (Si), silver (Ag), It may be formed of a material selected from the group consisting of nickel (Ni) and copper (Cu) or an alloy thereof.

The embodiment of the light emitting device 110 shown in FIG. 6 is an embodiment of a vertical type light emitting device, but the embodiment of the light emitting device package 200 shown in FIG. 5 includes a horizontal type other than the vertical type light emitting device shown in FIG. A light-emitting device or a flip-chip type light-emitting device may be disposed, and in this case, the light-emitting device 110 may emit light in a blue light wavelength region.

In the embodiment of the light emitting device package 200 of FIG. 5, the molding part 150 disposed on the package body 130 surrounding the light emitting device 110 or the like may include a resin layer.

The resin layer may include a mixture containing any one of a silicone resin, an epoxy resin, and an acrylic resin, or a resin selected from the group of compounds thereof.

In the embodiment of the light emitting device package 200 illustrated in FIG. 5, the spherical phosphor 100 of the above-described embodiment may be included in the molding unit 150. For example, the spherical phosphor may be dispersed and disposed in the resin layer of the molding part 150.

For example, an embodiment of a light-emitting device package including the light-emitting device 110 and a spherical phosphor 100 that is excited by light emitted from the light-emitting device and converted into wavelength may emit white light.

The plurality of spherical phosphors 100 included in the light emitting device package 200 may have spherical shapes having different diameters.

The light emitting device package includes the spherical phosphor of the above-described embodiment, so that white light can be realized from each phosphor particle, and the light can be uniformly emitted from all directions of the phosphor particle due to the spherical shape, and included in the light emitting device package. Close packing of the phosphor may be possible.

Accordingly, by including such a spherical phosphor, the light emitting device package of an embodiment may have an effect of implementing uniform white light as a whole.

In addition, the sizes of the plurality of spherical phosphors included in the light emitting device package may be the same.

For example, a plurality of spherical phosphors may have the same diameter, and in the case of a plurality of spherical phosphors having a uniform size, white light emitted from each of the phosphors may be uniform, so the uniformity of white light due to the difference in density of the phosphor particles The problem of degradation can be improved.

In the case of the above-described light emitting device package embodiment, by including a spherical phosphor, a single spherical phosphor can replace a phosphor composition in which a plurality of phosphor materials are mixed, thereby implementing uniform white light.

In addition, since it has a spherical shape, it can be densely packed in the molding portion, thereby having high light efficiency.

Hereinafter, an image display device and a lighting device will be described as an embodiment of a lighting system in which the above-described light emitting device package 200 is disposed.

A plurality of light emitting device packages 200 according to the embodiment may be arrayed on a substrate, and an optical member such as a light guide plate, a prism sheet, and a diffusion sheet may be disposed on an optical path of the light emitting device package 200. The light emitting device package 200, the substrate, and the optical member may function as a backlight unit.

In addition, it may be implemented as a display device, an indication device, and a lighting device including the light emitting device package 200 according to the embodiment.

Here, the display device includes a bottom cover, a reflector disposed on the bottom cover, a light emitting module that emits light, a light guide plate disposed in front of the reflector and guiding light emitted from the light emitting module forward, and in front of the light guide plate. An optical sheet including prism sheets disposed, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying an image signal to the display panel, and a color filter disposed in front of the display panel. Can include. Here, the bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit.

In addition, the lighting device of an embodiment may include the light emitting device package 200 of the embodiment as a light source.

For example, the lighting device processes or converts a light source module including a substrate and the light emitting device package 200 according to the embodiment, a radiator for dissipating heat from the light source module, and an external electric signal to be converted into a light source module. It may include a power supply to provide. For example, the lighting device may include a lamp, a head lamp, or a street light.

The headlamp includes a light emitting module including light emitting device packages 200 disposed on a substrate, a reflector that reflects light irradiated from the light emitting module in a predetermined direction, for example, forward, and the light reflected by the reflector. It may include a lens that is refracted by and a shade that is reflected by a reflector to block or reflect a part of light directed to the lens to form a light distribution pattern desired by the designer.

The lighting device of one embodiment can implement uniform white light by using a light emitting device package including the above-described spherical phosphor, and different phosphors by including phosphor materials emitting light of different wavelength ranges in one phosphor particle Since loss due to optical interference between materials can be reduced, it can have a higher flux than when a phosphor composition is mixed and used.

The embodiments have been described above, but these are only examples and do not limit the present invention, and those of ordinary skill in the art to which the present invention belongs are not illustrated above within the scope not departing from the essential characteristics of the present embodiment. It will be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified and implemented. And differences related to these modifications and applications should be construed as being included in the scope of the present invention defined in the appended claims.

100, 100a, 100b, 100c: spherical phosphor
101: inorganic particles 103, 105: fluorescent film layer
110: light-emitting element 130: package body
150: molding part 200: light emitting device package

Claims (17)

A package body having a cavity;
A light-emitting device disposed on the bottom surface of the cavity; And
And a molding part disposed in the cavity and surrounding the light emitting element,
The molding part includes a spherical phosphor excited by light emitted from the light emitting device,
The spherical phosphor,
Spherical inorganic particles;
A first fluorescent film layer disposed surrounding the inorganic particles and having a first thickness; And
A second fluorescent film layer disposed surrounding the first fluorescent film layer and having a second thickness,
A light emitting device package in which a first phosphor included in the first phosphor layer and a second phosphor included in the second phosphor layer have different emission wavelengths. The method of claim 1,
The first and second thicknesses are the same or different from each other light emitting device package. The method of claim 2,
The diameter of the inorganic particles is 0.1㎛ to 200㎛,
Each of the first and second phosphors includes at least one of red, green, and yellow phosphors. The method of claim 3,
When the first phosphor includes a green or yellow phosphor and the second phosphor includes a red phosphor, the first thickness is thinner than the second thickness. The method of claim 1,
The spherical phosphor further includes a core fluorescent layer disposed in the central region of the sphere of the spherical phosphor,
The inorganic particles are disposed surrounding the core fluorescent layer,
The core phosphor layer is a light emitting device package including any one of red, green, and yellow phosphors. delete delete delete delete delete delete delete delete delete delete delete delete

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