KR102252477B1 - Light emittimng device and light emitting device including the same - Google Patents

Abstract

The embodiment includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; A second conductive layer disposed under the second conductive type semiconductor layer; A first conductive layer disposed under the second conductive layer with an insulating layer therebetween; Through electrodes penetrating the second conductive layer, the second conductive type semiconductor layer and the active layer from the first conductive layer, and formed up to a portion of the first conductive type semiconductor layer; A conductive support substrate disposed under the first conductive layer; And a second electrode disposed in an edge region of the second conductive layer to correspond to an edge of the second conductive type semiconductor layer.

Description

A light emitting device and a light emitting device package including the same {LIGHT EMITTIMNG DEVICE AND LIGHT EMITTING DEVICE INCLUDING THE SAME}

The embodiment relates to a light emitting device.

Group 3-5 compound semiconductors such as GaN and AlGaN are widely used in optoelectronics and electronic devices due to their many advantages, such as having a wide and easily adjustable band gap energy.

In particular, light emitting devices such as light emitting diodes and laser diodes using a group 3-5 or group 2-6 compound semiconductor material of semiconductors are developed in thin film growth technology and device materials, such as red, green, blue, and ultraviolet rays. Various colors can be implemented, and efficient white light can be realized by using fluorescent materials or by combining colors. Low power consumption, semi-permanent life, fast response speed, safety, and environment compared to conventional light sources such as fluorescent lamps and incandescent lamps. It has the advantage of affinity.

Therefore, the transmission module of the optical communication means, a light-emitting diode backlight that replaces the Cold Cathode Fluorescence Lamp (CCFL) that constitutes the backlight of the LCD (Liquid Crystal Display) display, and white light that can replace a fluorescent lamp or incandescent light bulb. Applications are expanding to diode lighting devices, automobile headlights and traffic lights.

In the light emitting device, a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer is formed, and a first electrode and a second electrode are respectively formed on the first conductive type semiconductor layer and the second conductive type semiconductor layer. Is placed. In the light emitting device, electrons injected through the first conductivity type semiconductor layer and holes injected through the second conductivity type semiconductor layer meet each other to emit light having energy determined by an energy band inherent to a material constituting the active layer. The light emitted from the active layer may vary depending on the composition of the material constituting the active layer, and may be blue light, ultraviolet light (UV), or deep ultraviolet light.

1 is a view showing a conventional light emitting device.

The vertical light emitting device shown in FIG. 1 is a light emitting structure 120 including a first conductivity type semiconductor layer 122, an active layer 124, and a second conductivity type semiconductor layer 126 on a second electrode 136 Is disposed, and the first electrode 132 is disposed on the first conductivity type semiconductor layer 122.

The vertical light emitting device has most of the amount of light emitted in the upper direction, and when light emitted from the active layer 124 in FIG. 1 is emitted, a part of the light extraction efficiency may be reduced by being partially reflected by the first electrode 132. .

The embodiment aims to improve light extraction efficiency and light emission efficiency of a light emitting device.

The embodiment includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; A second conductive layer disposed under the second conductive type semiconductor layer; A first conductive layer disposed under the second conductive layer with an insulating layer therebetween; Through electrodes penetrating the second conductive layer, the second conductive type semiconductor layer and the active layer from the first conductive layer, and formed up to a portion of the first conductive type semiconductor layer; A conductive support substrate disposed under the first conductive layer; And a second electrode disposed in an edge region of the second conductive layer to correspond to an edge of the second conductive type semiconductor layer.

The insulating layer may be disposed to extend around the through electrode.

The second electrode may be disposed surrounding the edge of the second conductivity type semiconductor layer.

The through electrodes may have unevenness formed in a region in contact with the first conductivity type semiconductor layer.

A pattern may be formed on the first conductivity type semiconductor layer in correspondence with the through electrodes.

The pattern includes concave portions and convex portions, and the convex portions may correspond to the through electrodes.

The convex portion may be disposed between the through electrodes.

Unevenness may be formed on the surfaces of the concave portions and convex portions.

The width of the convex portion may be wider than the width of the through electrode.

Another embodiment is a conductive substrate in which grooves are formed; And a light emitting device including at least a portion of the light emitting device disposed in a groove of the conductive substrate, wherein at least a portion of a side surface and a bottom surface of the light emitting device are coupled to the conductive substrate.

In the light-emitting devices according to the present embodiments, the through electrode connected from the first conductive layer is evenly disposed in the first conductive type semiconductor layer, so that current is evenly supplied to the entire area of the first conductive type semiconductor layer, thus emitting light. Since electrons and holes are smoothly combined in all areas of the structure, luminous efficiency can be improved.

1 is a view showing a conventional light emitting device,
2 is a view showing a first embodiment of a light emitting device,
3 is a view showing a second embodiment of a light emitting device,
4 is a view showing in detail the light emitting structure of FIG. 3,
5A and 5B are top views of the light emitting device of FIGS. 2 and 3,
6 is a view showing an embodiment of a light emitting device package,
7 is a diagram showing an embodiment of an image display device in which a light emitting element is disposed,
8 is a diagram illustrating an embodiment of a lighting device in which a light emitting device package is disposed.

Hereinafter, embodiments of the present invention capable of realizing the above object will be described with reference to the accompanying drawings.

In the description of the embodiment according to the present invention, in the case where it is described as being formed in "on or under" of each element, the upper (upper) or lower (lower) (on or under) includes both elements in direct contact with each other or in which one or more other elements are indirectly formed between the two elements. In addition, when expressed as “on or under”, it may include not only an upward direction but also a downward direction based on one element.

The light emitting device according to the embodiments is a vertical light emitting device, and the first electrode for supplying current to the first conductivity type semiconductor layer is disposed under the light emitting structure to reduce the amount of reflection of light emitted to the top of the light emitting structure, The first electrode may pass through the second conductivity type semiconductor layer and the active layer to be electrically connected to the first conductivity type semiconductor layer.

2 is a view showing a first embodiment of a light emitting device.

In the light emitting device 200a according to the present embodiment, the second conductive layer 236 is disposed under the light emitting structure 220, and the insulating layer 285 and the first conductive layer 232 are disposed under the second electrode. The through electrode 233 which is disposed and extends from the first conductive layer 232 may electrically contact the second conductive type semiconductor layer 222 in the light emitting structure 220. In addition, in the edge region of the second conductive layer 236, the second electrodes 236a and 236b may be disposed to correspond to the edge of the light emitting structure 220.

The light emitting structure 220 includes a first conductivity type semiconductor layer 222, an active layer 224 and a second conductivity type semiconductor layer 226.

The first conductivity type semiconductor layer 222 may be implemented as a compound semiconductor such as a III-V group or a II-VI group, and may be doped with a first conductivity type dopant. The first conductivity type semiconductor layer 222 is _{a semiconductor material having a composition formula of Al x} In _y Ga _(1-xy) N (0≤x≤1, 0≤y≤1, 0≤x+y≤1), AlGaN , GaN, InAlGaN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP may be formed of any one or more.

When the first conductivity-type semiconductor layer 222 is an n-type semiconductor layer, the first conductivity-type dopant may include an n-type dopant such as Si, Ge, Sn, Se, and Te. The first conductivity-type semiconductor layer 222 may be formed as a single layer or multiple layers, but is not limited thereto.

The active layer 224 is disposed between the first conductivity type semiconductor layer 222 and the second conductivity type semiconductor layer 226, and is a single well structure, a multiple well structure, a single quantum well structure, and a multiple quantum well. It may include any one of a (MQW: Multi Quantum Well) structure, a quantum dot structure, or a quantum line structure.

The active layer 224 is a well layer and a barrier layer, such as AlGaN/AlGaN, InGaN/GaN, InGaN/InGaN, AlGaN/GaN, InAlGaN/GaN, GaAs (InGaAs), using a compound semiconductor material of group III-V element /AlGaAs, GaP (InGaP) / AlGaP may be formed in any one or more pair structure, but is not limited thereto. In this case, the well layer may be formed of a material having an energy band gap smaller than the energy band gap of the barrier layer.

The second conductivity type semiconductor layer 226 may be formed of a semiconductor compound. The second conductivity type semiconductor layer 226 may be implemented as a compound semiconductor such as Group III-V or Group II-VI, and may be doped with a second conductivity type dopant. The second conductivity type semiconductor layer 226 is, for example, _{a semiconductor material having a composition formula of In x} Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) , AlGaN, GaNAlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP may be formed of any one or more.

When the second conductivity-type semiconductor layer 226 is a p-type semiconductor layer, the second conductivity-type dopant may be a p-type dopant such as Mg, Zn, Ca, Sr, Ba, or the like. The second conductivity-type semiconductor layer 226 may be formed as a single layer or multiple layers, but is not limited thereto.

Although not shown, an electron blocking layer may be disposed between the active layer 224 and the second conductivity type semiconductor layer 226. The electron blocking layer may have a superlattice structure, for example, AlGaN doped with a second conductivity type dopant may be disposed, and GaN having a different composition ratio of aluminum is formed as a layer. A plurality of them may be arranged alternately with each other.

As illustrated, the surface of the first conductivity type semiconductor layer 222 is uneven to improve light extraction efficiency.

A second conductive layer 236 may be disposed under the second conductive type semiconductor layer 226. The second conductive layer 236 is disposed in surface contact with the second conductive semiconductor layer 226, but may not be in the region where the through electrode 233 is formed. In addition, the edge of the second conductive layer 236 may be disposed further outside the edge of the second conductivity type semiconductor layer 226, to secure a region in which the second electrode pads 236a and 236b are to be disposed. It is for sake.

The second electrode 236 may be made of a conductive material, specifically metal, and more specifically, silver (Ag), aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni ), copper (Cu), gold (Au) may be formed in a single-layer or multi-layered structure including at least one.

A passivation layer 280 may be formed around the light emitting structure 220. The passivation layer 280 may be made of an insulating material, and the insulating material may be made of a non-conductive oxide or nitride. As an example, the passivation layer 280 may be formed of a silicon oxide (SiO ₂ ) layer, an oxynitride layer, and an aluminum oxide layer.

The passivation layer 280 may be disposed on the periphery of the light emitting structure 200 and on the edge of the second conductive layer 236 disposed further outside the edge of the second conductive semiconductor layer 226 described above. have. The passivation layer 280 disposed on the edge of the second conductive layer 236 may be open in a region in which the second electrode pads 236a and 236b are formed.

The first conductive layer 232 may be disposed under the second conductive layer 236 with the insulating layer 285 interposed therebetween, and the first conductive layer 232 may be made of a conductive material, and in detail, It may be made of metal, and more specifically, including at least one of silver (Ag), aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (Au). It may be formed in a single-layer or multi-layer structure.

A plurality of through electrodes 233 are disposed extending upward from the first electrode 232, and the through electrodes 233 include an insulating layer 285, a second electrode 236, and a second conductivity type semiconductor layer 226. It penetrates through the active layer 234 and extends to a part of the first conductivity type semiconductor layer 222, so that an upper surface of the through electrode 233 may make surface contact with the first conductivity type semiconductor layer 222.

The cross section of each through electrode 233 may be circular or polygonal. The above-described insulating layer 285 is disposed to extend around the through electrode 233, so that the through electrode 233 is connected to the second conductive layer 226, the second conductive semiconductor layer 226, and the active layer 224. It can be electrically insulated.

An ohmic layer 240 may be disposed under the first conductive layer 232.

The ohmic layer 240 may be about 200 angstroms thick. The ohmic layer 240 includes indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO) ), AZO(aluminum zinc oxide), ATO(antimony tin oxide), GZO(gallium zinc oxide), IZON(IZO Nitride), AGZO(Al-GaZnO), IGZO(In-GaZnO), ZnO, IrOx, RuOx, NiO , RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, Au, It may be formed to include at least one of Hf, but is not limited to such a material.

A reflective layer 250 that can act as a reflective electrode may be disposed under the ohmic layer. The reflective layer 250 is tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), silver (Ag), nickel (Ni), platinum (Pt), rhodium (Rh), or Al or Ag It may be made of a metal layer containing an alloy containing Pt or Rh. Aluminum or silver can effectively reflect light traveling from the active layer 224 in the lower direction of FIG. 2 to greatly improve light extraction efficiency of the semiconductor device.

The width of the reflective layer 250 may be narrower than the width of the ohmic layer 240, and a channel layer 260 may be disposed under the reflective layer 250. The width of the channel layer 260 is larger than the width of the reflective layer 250 and may be disposed surrounding the reflective layer 250. The channel layer 260 may be made of a conductive material, for example, gold (Au) or tin (Sn).

The conductive support substrate 270 may be formed of a conductive material such as a metal or a semiconductor material. A metal having excellent electrical conductivity or thermal conductivity can be used, and since it must be able to sufficiently dissipate heat generated during operation of a semiconductor device, it may be formed of a material having high thermal conductivity (eg, metal). For example, it may be made of a material selected from the group consisting of molybdenum (Mo), silicon (Si), tungsten (W), copper (Cu), and aluminum (Al), or an alloy thereof, and gold (Au ), copper alloy (Cu Alloy), nickel (Ni), copper-tungsten (Cu-W), carrier wafer (e.g. GaN, Si, Ge, GaAs, ZnO, SiGe, SiC, SiGe, Ga ₂ O _3, etc.) And the like may be optionally included.

The support substrate 270 is 50 to 200 in order to have a mechanical strength sufficient to separate chips into separate chips through a scribing process and a breaking process without causing warpage to the entire nitride semiconductor. It can be made to a thickness of micrometers.

Although not shown, the bonding layer 236, the channel layer 260, and the conductive support substrate 270 are combined. Gold (Au), tin (Sn), indium (In), aluminum (Al), and silicon (Si) , Silver (Ag), nickel (Ni) and copper (Cu) may be formed of a material selected from the group consisting of, or an alloy thereof.

In the light emitting device 200a according to the present embodiment, even current is supplied from the first conductive layer 236 to the entire area of the first conductive type semiconductor layer 222 through the through electrode 233, and the second electrode 236 ) And the second conductivity-type semiconductor layer 226 in surface contact may also supply current to the entire area. In addition, the electrode pads 236a and 236b are disposed on the second conductive layer 236 around the light emitting structure 220, so that current can be evenly supplied to the entire area of the second conductive layer 236. Accordingly, the frequency at which electrons injected through the first conductivity-type semiconductor layer 222 and holes injected through the second conductivity-type semiconductor layer 226 are combined in the active layer 224 increases, The amount of light emitted may increase.

3 is a view showing a second embodiment of a light emitting device.

The light emitting device 200b according to the present exemplary embodiment is similar to the exemplary embodiment of FIG. 2, except that a pattern is formed on the first conductivity type semiconductor layer 222. The pattern is formed by forming concave and convex on the surface of the first conductivity-type semiconductor layer 222, and the convex portions are arranged to correspond to the through electrode 233 described above, and the concave portions are the through electrode 233 ) Can be formed on the same level as the Young Young between.

4 is a diagram showing the light emitting structure of FIG. 3 in detail.

An unevenness may be formed in the region C where the through electrode 233 contacts the first conductivity type semiconductor layer 222.

Convex portions are formed on the surface of the first conductivity-type semiconductor layer 222 corresponding to the through electrode 233, and a concave portion on the surface of the first conductivity-type semiconductor layer 222 corresponds to the region between the through electrodes 233 Can be formed. At this time, irregularities may be formed on the surfaces B and A of the concave portions and convex portions, respectively.

The pattern consisting of concave portions and convex portions on the surface of the first conductivity type semiconductor layer 222 has regularity, but irregularities formed on the surfaces of the concave portions and convex portions may be irregular roughness.

In FIG. 4, the width of the convex portion may be larger than the width of the through electrode 233. More specifically, the first width W ₂₁ of the surface of the through electrode 233 may be smaller than _{the second width W 22} of the region in which the through electrode 233 contacts the first conductive layer 232, and , The first width W ₁₁ of the surface of the convex portion may be smaller than _{the second width W 12} of the convex portion at a height corresponding to the surface of the adjacent concave portion.

_{In addition, the first width (W 11} ) of the surface of the convex portion may be wider than the first width (W ₂₁ ) of the surface of the through electrode 233, and the through electrode 233 is in contact with the first conductive layer 232 _{The second width W 12} of the convex portion at a height corresponding to the surface of the adjacent concave portion may be wider than the second width W _{22 of the region.}

5A and 5B are top views of the light emitting device of FIGS. 2 and 3.

In FIG. 5A, through electrodes 233 are disposed under the first conductivity type semiconductor layer 222, and an insulating layer 285 is disposed around each through electrode 233. The through electrode 233 and the insulating layer 285 are disposed under the first conductivity type semiconductor layer 222 and may not be visible from the top view, but are shown for convenience of understanding.

Second electrodes 236a and 236b are disposed outside the passivation layer 280. The second electrode 236b disposed in the'D' area has a width greater than that of the second electrode 236a disposed in the other area, and may be an area to which the wire is to be bonded.

In the top view illustrated in FIG. 5B, a concave portion is disposed in a region'B' of the surface of the second conductivity type semiconductor layer 222, and the concave portion may be disposed between the through electrodes 233.

In the light emitting devices 200a and 200b according to the above-described embodiments, the through electrode 233 connected from the first conductive layer 232 to the first conductivity type semiconductor layer 222 is evenly disposed over the entire area, Electric current is evenly supplied to all regions of the type semiconductor layer 222, and thus electrons and holes are smoothly combined in all regions of the light emitting structure 220, thereby improving luminous efficiency.

6 is a view showing an embodiment of a light emitting device package.

In the light emitting device package according to the present embodiment, a groove may be formed in the conductive substrate 300, and the light emitting device 200b according to the above-described embodiments may be disposed in the above-described groove. At least a portion of the side surface and the bottom surface of the light emitting device 200b may be coupled to the conductive substrate 300, and may be coupled with a solder 310, or the like.

A dielectric layer 320 is disposed on the upper surface of the conductive substrate 300, and a pad 330 for bonding is disposed on the dielectric layer 320 to form one electrode and a wire 340 of the light emitting device 200b. Can be bonded. Further, the other electrode of the light emitting device 200b is coupled to the conductive substrate 300 and may be electrically connected.

A molding part 350 is formed around the light emitting device 200b, and the molding part 350 protects the light emitting device 200b and may change a path of light emitted from the light emitting device 350.

One or a plurality of light-emitting elements may be mounted in the above-described light-emitting device package, but the embodiment is not limited thereto.

Hereinafter, an image display device and a lighting device will be described as an embodiment of a lighting system in which the above-described light emitting device package is disposed.

7 is a diagram illustrating an embodiment of an image display device including a light emitting device package.

As shown, the image display device 500 according to the present embodiment includes a light source module, a reflector 520 on the bottom cover 510, and light emitted from the light source module disposed in front of the reflector 520. The first prism sheet 550 and the second prism sheet 560 and the second prism sheet 560 are arranged in front of the light guide plate 540 to guide the image display device in front of the light guide plate 540. It includes a panel 570 disposed in front and a color filter 580 disposed in front of the panel 570.

The light source module includes a light emitting device package 535 on the circuit board 530. Here, the circuit board 530 may be a PCB or the like.

The bottom cover 510 may accommodate components in the image display device 500. The reflector 520 may be provided as a separate component as shown in this drawing, or may be provided in a form coated with a material having high reflectivity on the rear surface of the light guide plate 540 or the front surface of the bottom cover 510.

The reflective plate 520 may be made of a material that has high reflectivity and can be used in an ultra-thin type, and may use PolyEthylene Terephtalate (PET).

The light guide plate 540 scatters light emitted from the light emitting device package module so that the light is uniformly distributed over the entire screen area of the liquid crystal display. Accordingly, the light guide plate 530 is made of a material having a good refractive index and transmittance, and may be formed of polymethylmethacrylate (PMMA), polycarbonate (PC), or polyethylene (PolyEthylene; PE). In addition, when the light guide plate 540 is omitted, an air guide type display device may be implemented.

The first prism sheet 550 is formed of a light-transmitting and elastic polymer material on one surface of the support film, and the polymer may have a prism layer in which a plurality of three-dimensional structures are repeatedly formed. Here, the plurality of patterns may be repeatedly provided in a stripe type of floors and valleys as shown.

In the second prism sheet 560, a direction of a floor and a valley on one side of the support film may be perpendicular to a direction of a floor and a valley on one surface of the support film in the first prism sheet 550. This is to evenly distribute the light transmitted from the light source module and the reflective sheet in all directions of the panel 570.

In this embodiment, the first prism sheet 550 and the second prism sheet 560 form an optical sheet, and the optical sheet is formed of a different combination, for example, a microlens array, or a diffusion sheet and a microlens array. It may be made of a combination or a combination of a single prism sheet and a micro lens array.

The panel 570 may include a liquid crystal display. In addition to the liquid crystal display panel 560, other types of display devices requiring a light source may be provided.

The panel 570 is in a state in which a liquid crystal is placed between the glass bodies and a polarizing plate is placed on both glass bodies in order to utilize the polarization of light. Here, the liquid crystal has an intermediate characteristic between a liquid and a solid, and the liquid crystal, which is an organic molecule having fluidity like a liquid, has a state that is regularly arranged like a crystal, and the molecular arrangement is changed by an external electric field. Display an image.

A liquid crystal display panel used in a display device is an active matrix type, and uses a transistor as a switch for controlling a voltage supplied to each pixel.

A color filter 580 is provided on the front surface of the panel 570 to transmit light projected from the panel 570 and transmit only red, green, and blue light for each pixel, thereby displaying an image.

8 is a diagram illustrating an embodiment of a lighting device in which a light emitting device package is disposed.

The lighting device according to the present embodiment may include a cover 1100, a light source module 1200, a radiator 1400, a power supply unit 1600, an inner case 1700, and a socket 1800. In addition, the lighting device according to the embodiment may further include any one or more of the member 1300 and the holder 1500, and the light source module 1200 may include a light emitting device package according to the above-described embodiments. .

The cover 1100 has a shape of a bulb or a hemisphere, is hollow, and may be provided in an open shape. The cover 1100 may be optically coupled to the light source module 1200. For example, the cover 1100 may diffuse, scatter, or excite light provided from the light source module 1200. The cover 1100 may be a kind of optical member. The cover 1100 may be coupled to the radiator 1400. The cover 1100 may have a coupling portion coupled to the radiator 1400.

A milky white paint may be coated on the inner surface of the cover 1100. The milky white paint may include a diffuser that diffuses light. The surface roughness of the inner surface of the cover 1100 may be greater than the surface roughness of the outer surface of the cover 1100. This is to allow the light from the light source module 1200 to be sufficiently scattered and diffused to be emitted to the outside.

The material of the cover 1100 may be glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance, and strength. The cover 1100 may be transparent or opaque so that the light source module 1200 can be seen from the outside. The cover 1100 may be formed through blow molding.

The light source module 1200 may be disposed on one surface of the radiator 1400. Accordingly, heat from the light source module 1200 is conducted to the radiator 1400. The light source module 1200 may include a light emitting device package 1210, a connection plate 1230, and a connector 1250.

The member 1300 is disposed on the upper surface of the radiator 1400 and has guide grooves 1310 into which a plurality of light emitting device packages 1210 and a connector 1250 are inserted. The guide groove 1310 corresponds to the substrate and the connector 1250 of the light emitting device package 1210.

The surface of the member 1300 may be coated or coated with a light reflective material. For example, the surface of the member 1300 may be coated or coated with a white paint. The member 1300 reflects light reflected on the inner surface of the cover 1100 and returned toward the light source module 1200 toward the cover 1100. Therefore, it is possible to improve the light efficiency of the lighting device according to the embodiment.

The member 1300 may be made of an insulating material, for example. The connection plate 1230 of the light source module 1200 may include an electrically conductive material. Accordingly, electrical contact may be made between the radiator 1400 and the connection plate 1230. The member 1300 is made of an insulating material to block an electrical short between the connection plate 1230 and the radiator 1400. The radiator 1400 receives heat from the light source module 1200 and heat from the power supply unit 1600 to radiate heat.

The holder 1500 blocks the receiving groove 1919 of the insulating part 1710 of the inner case 1700. Accordingly, the power supply unit 1600 accommodated in the insulating unit 1710 of the inner case 1700 is sealed. The holder 1500 has a guide protrusion 1510. The guide protrusion 1510 has a hole through which the protrusion 1610 of the power supply unit 1600 passes.

The power supply unit 1600 processes or converts an electrical signal provided from the outside and provides it to the light source module 1200. The power supply unit 1600 is accommodated in the storage groove 1719 of the inner case 1700 and is sealed inside the inner case 1700 by the holder 1500. The power supply unit 1600 may include a protrusion 1610, a guide unit 1630, a base 1650, and an extension 1670.

The guide part 1630 has a shape protruding outward from one side of the base 1650. The guide part 1630 may be inserted into the holder 1500. A number of components may be disposed on one surface of the base 1650. A number of components include, for example, a DC converter that converts AC power provided from an external power source to DC power, a driving chip that controls driving of the light source module 1200, and an ESD for protecting the light source module 1200. (ElectroStatic discharge) may include a protection element, but is not limited thereto.

The extension part 1670 has a shape protruding outward from the other side of the base 1650. The extension part 1670 is inserted into the connection part 1750 of the inner case 1700 and receives an electrical signal from the outside. For example, the extension part 1670 may be provided equal to or smaller than the width of the connection part 1750 of the inner case 1700. Each end of the "+ wire" and "- wire" may be electrically connected to the extension part 1670, and the other ends of the "+ wire" and the "- wire" may be electrically connected to the socket 1800.

The inner case 1700 may include a molding unit together with the power supply unit 1600 therein. The molding part is a part where the molding liquid is solidified, and allows the power supply part 1600 to be fixed inside the inner case 1700.

Although the embodiments have been described above, these are only examples and do not limit the present invention, and those of ordinary skill in the field to which the present invention belongs are not exemplified above without departing from the essential characteristics of the present embodiment. It will be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified and implemented. And differences related to these modifications and applications should be construed as being included in the scope of the present invention defined in the appended claims.

100, 200a, 200b: light emitting device 120, 220: light emitting structure
122, 222: first conductivity type semiconductor layer 124, 224: active layer
126, 226: second conductivity type semiconductor layer 132: first electrode
136: second electrode 232: first conductive layer
233: through electrode 236: second conductive layer
236a, 236b: second electrode 240: ohmic layer
250: reflective layer 260: channel
270: conductive support substrate 280: passivation layer
285: insulating layer 300: conductive substrate
310: solder 320: dielectric layer
330: pad 340: wire
350: molding part 500: image display device

Claims (10)

A light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer;
A second conductive layer disposed under the second conductive type semiconductor layer;
A first conductive layer disposed under the second conductive layer with an insulating layer therebetween;
A passivation layer disposed around the light emitting structure, the first conductive layer, the second conductive layer, and the insulating layer;
Through electrodes penetrating the second conductive layer, the second conductive type semiconductor layer and the active layer from the first conductive layer, and formed up to a portion of the first conductive type semiconductor layer;
A conductive support substrate disposed under the first conductive layer; And
In the edge region of the second conductive layer, comprising a second electrode disposed to correspond to the edge of the second conductivity type semiconductor layer,
On the upper surface of the first conductivity type semiconductor layer, a pattern is formed in correspondence with the through electrodes,
The pattern includes concave portions and convex portions, the convex portions overlap the through electrodes in a vertical direction, and the insulating layer is disposed to extend around the through electrode,
The second electrode is disposed surrounding an edge of the second conductivity type semiconductor layer,
Irregular irregularities are formed on the upper surfaces of the through electrodes,
Irregular irregularities are formed on the surfaces of the concave portions and convex portions of the pattern,
The through electrode has an upper width smaller than a lower width,
The convex portion of the pattern has an upper width smaller than a lower width,
The width of the upper portion of the convex portion is larger than the width of the upper portion of the through electrode,
The width of the lower portion of the convex portion is larger than the width of the lower portion of the through electrode,
The first conductive layer protrudes outward from the second conductive layer and the insulating layer, and the passivation layer is disposed on an upper surface and an outer surface of a protruding portion of the first conductive layer. delete delete delete delete delete delete delete delete delete

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