KR102252475B1 - Light emitting device module - Google Patents

Abstract

An embodiment includes a circuit board; At least a light-emitting element bonded to the conductive layer of the circuit board with a conductive adhesive; And a reflective member disposed in a peripheral region of each of the light-emitting elements, and in which a void is formed in a central region on a surface where the reflective member and the circuit board contact each other.

Description

Light emitting device module {LIGHT EMITTING DEVICE MODULE}

The embodiment relates to a light emitting device module.

Group 3-5 compound semiconductors such as GaN and AlGaN are widely used in optoelectronics and electronic devices due to their many advantages, such as having a wide and easily adjustable band gap energy.

In particular, light emitting devices such as light emitting diodes and laser diodes using a group 3-5 or group 2-6 compound semiconductor material of semiconductors are developed in thin film growth technology and device materials, such as red, green, blue, and ultraviolet rays. Various colors can be implemented, and efficient white light can be realized by using fluorescent materials or by combining colors. Low power consumption, semi-permanent life, fast response speed, safety, and environment compared to conventional light sources such as fluorescent lamps and incandescent lamps. It has the advantage of affinity.

Therefore, the transmission module of the optical communication means, a light-emitting diode backlight that replaces the Cold Cathode Fluorescence Lamp (CCFL) that constitutes the backlight of the LCD (Liquid Crystal Display) display, and white light that can replace a fluorescent lamp or incandescent light bulb. Applications are expanding to diode lighting devices, automobile headlights and traffic lights.

In the light emitting device, a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer is formed on a substrate made of sapphire, etc., and is formed on the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively. The first electrode and the second electrode are disposed. In the light emitting device, electrons injected through the first conductivity type semiconductor layer and holes injected through the second conductivity type semiconductor layer meet each other to emit light having energy determined by an energy band inherent to a material constituting the active layer. The light emitted from the active layer may vary depending on the composition of the material constituting the active layer, and may be blue light, ultraviolet light (UV), or deep ultraviolet light.

Such a light emitting device may be disposed in a backlight unit or a lighting device in the form of a package.

1 is a view showing a conventional light emitting device package.

In the light emitting device package, the light emitting device 10 is disposed on the bottom surface of the cavity of the package body 110 having the cavity, and the molding part 160 including the phosphor 165 is filled in the cavity.

A first lead frame 121 and a second lead frame 122 may be disposed on the package body 110, and the light emitting device 10 is respectively disposed on the first lead frame 121 and the second lead frame 122. Wires 140 and 145 may be electrically connected.

The above-described light emitting device package 100 may be connected to a circuit board to form a light emitting device module, and may receive a current required for driving the light emitting device 10.

However, the conventional light emitting device module described above has the following problems.

Wires and lead frames are required to supply current to the light-emitting device. These materials may cause cost increase, and the wire may interfere with the progress of light emitted from the light-emitting device, thereby reducing light extraction efficiency.

In addition, there is a problem in that the color distribution of light emitted from the light emitting device package is uneven due to reasons such as uneven distribution of the phosphor in the molding part in the cavity.

The embodiment aims to reduce the manufacturing cost of a light emitting device module and improve light extraction efficiency and color dispersion.

An embodiment includes a circuit board; At least one light emitting device bonded to the conductive layer of the circuit board with a conductive adhesive; And a reflective member disposed in a peripheral region of each of the light emitting devices, and a light emitting device module in which a void is formed in a region where the reflective member and the circuit board contact each other.

The surface of the reflective member may be formed to be concave in a region in contact with the circuit board.

The height of the void may be largest in the edge region of the reflective member.

The void may be filled with air.

The reflective member may include at least one of PPA, PCT, EMC, and silicon.

The light emitting device may be a flip chip type light emitting device.

The circuit board and the reflective member may each form a bottom surface and a sidewall of the cavity, and the light emitting device may be disposed on the bottom surface of the cavity.

The reflective member may have an inclined surface facing the light emitting element.

It may further include a molding portion disposed surrounding the light emitting device.

It may further include a reflective member and a phosphor disposed on the molding part.

The phosphor may be arranged in a film type.

In the light emitting device module according to the embodiment, a wire and a lead frame are omitted, and a flip-chip type light emitting device is directly coupled to a circuit board, thereby reducing material cost and reducing light absorption or blocking by the wire, thereby improving light efficiency. , As a film-type phosphor is used, the color dispersion of light emitted from the light emitting device module can be improved compared to the conventional light emitting device package.

1 is a view showing a conventional light emitting device package,
2 is a view showing an embodiment of a light emitting device module,
3A to 3H are views showing a manufacturing process of the light emitting device module of FIG. 2,
FIG. 4 is a detailed diagram illustrating area'A' of FIG. 3G.
5A and 5B are views showing a color distribution of a conventional light emitting device package and a light emitting device module according to the embodiment,
6 is a diagram showing an embodiment of a backlight unit in which a light emitting device module is disposed,
7 is a diagram showing an embodiment of a lighting device in which a light emitting device module is disposed.

Hereinafter, embodiments of the present invention capable of realizing the above object will be described with reference to the accompanying drawings.

In the description of the embodiment according to the present invention, in the case where it is described as being formed in "on or under" of each element, the upper (upper) or lower (lower) (on or under) includes both elements in direct contact with each other or in which one or more other elements are indirectly formed between the two elements. In addition, when expressed as “on or under”, it may include not only an upward direction but also a downward direction based on one element.

2 is a view showing an embodiment of a light emitting device module.

The light emitting device module according to the embodiment surrounds the light emitting device 250 and the light emitting device 250 electrically connected to the circuit board 280 and the first and second conductive layers 281 and 282 on the circuit board 280 Including a molding part 260 disposed, a reflective member 210 disposed around the molding part 260, and a phosphor film 270 disposed above the molding part 260 and the reflective member 210 Done. In FIG. 2, one light-emitting device 250 is disposed on the circuit board 280, but as shown in FIG. 3H, packages of a plurality of light-emitting devices 250 may be arranged in an array.

The circuit board 280 may be a printed circuit board, a metal PCB, or FR-4. The first conductive layer 281 and the second conductive layer 282 on the circuit board 280 may be electrically connected to the first electrode 256a and the second electrode 256c of the light emitting device 250, respectively.

The light-emitting device 250 may be a flip chip type light-emitting device, in which a buffer layer 252 and a light-emitting structure 254 are disposed on a substrate 251, and the light-emitting structure 254 is first conductive. Type semiconductor layer 254a, an active layer 254b, and a second conductivity type semiconductor layer 254c, and each of the first conductivity type semiconductor layer 254a and the second conductivity type semiconductor layer 254c has a first The electrode 256a and the second electrode 256c may be disposed.

The substrate 251 may be formed of a material suitable for growth of semiconductor materials or a carrier wafer, may be formed of a material having excellent thermal conductivity, and may include a conductive substrate or an insulating substrate. For example, at least one of sapphire (Al ₂ O ₃ ), SiO ₂ , SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, Ga ₂ 0 ₃ may be used.

When the substrate 251 is formed of sapphire or the like, and the light emitting structure 254 including GaN or AlGaN is disposed on the substrate 110, the lattice mismatch between GaN or AlGaN and sapphire is very large. Since the difference in the coefficient of thermal expansion between them is also very large, dislocation, melt-back, crack, pit, and surface morphology defects that deteriorate crystallinity occur. Therefore, the buffer layer 252 may be formed of AlN or the like.

The first conductivity type semiconductor layer 254a may be implemented as a compound semiconductor such as Group III-V or Group II-VI, and may be a semiconductor layer of a first conductivity type by doping with a first conductivity type dopant. The first conductivity type semiconductor layer 254a _{is made of a semiconductor material having a composition formula of Al x} In _y Ga _(1-xy) N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). It may be formed of, for example, any one or more of AlGaN, GaN, InAlGaN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP.

When the first conductivity-type semiconductor layer 254a is an n-type semiconductor layer, the first conductivity-type dopant may include an n-type dopant such as Si, Ge, Sn, Se, and Te. The first conductivity-type semiconductor layer 254a may be formed as a single layer or multiple layers, but is not limited thereto.

The active layer 254b is disposed on the upper surface of the first conductivity type semiconductor layer 254a, and has a single well structure, a multiple well structure, a single quantum well structure, and a multi quantum well (MQW) structure. , It may include any one of a quantum dot structure or a quantum wire structure.

The active layer 254b is a well layer and a barrier layer, such as AlGaN/AlGaN, InGaN/GaN, InGaN/InGaN, AlGaN/GaN, InAlGaN/GaN, GaAs (InGaAs), using a compound semiconductor material of group III-V element. /AlGaAs, GaP (InGaP) / AlGaP may be formed in any one or more pair structure, but is not limited thereto. The well layer may be formed of a material having an energy band gap smaller than the energy band gap of the barrier layer.

The second conductivity type semiconductor layer 254c may be formed of a semiconductor compound on the surface of the active layer 254b. The second conductivity type semiconductor layer 254c may be implemented as a compound semiconductor such as Group III-V or Group II-VI, and may be doped with a second conductivity type dopant. The second conductivity type semiconductor layer 254c is, for example, _{a semiconductor material having a composition formula of In x} Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) AlGaN, GaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP may be formed of any one or more.

The second conductivity type semiconductor layer 254c may be doped with a second conductivity type dopant. When the second conductivity type semiconductor layer 254c is a p type semiconductor layer, the second conductivity type dopant is Mg, Zn, Ca, Sr, It may be a p-type dopant such as Ba or the like. The second conductivity type semiconductor layer 254c may be formed as a single layer or multiple layers, but is not limited thereto.

Although not shown, a light-transmitting conductive layer is formed on the second conductive type semiconductor layer 254c with intium tin oxide (ITO), etc., and current spreading from the second electrode 256c to the second conductive type semiconductor layer 254c (spreading) effect can be improved.

The second conductivity type semiconductor layer 254c, the active layer 254b, and a portion of the first conductivity type semiconductor layer 254a are mesa-etched to expose the first conductivity type semiconductor layer 254a, thereby forming the first electrode 256a. The area to be formed can be secured.

A first electrode 256a and a second electrode 256c are disposed on the first conductivity type semiconductor layer 254a and the second conductivity type semiconductor layer 254c, respectively, and the first electrode 256a and the second electrode 256c ) May include at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (Au), and may be formed in a single layer or multilayer structure.

Although not shown, a passivation layer may be formed around the light emitting structure 254, and the passivation layer may be made of an insulating material, specifically oxide or nitride, and more specifically, silicon oxide (SiO ₂ ) It may be made of a layer, an oxide nitride layer, and an aluminum oxide layer.

The first electrode 256a and the second electrode 256c of the light emitting device 250 may be electrically connected to the first conductive layer 281 and the second conductive layer 282 of the circuit board 280 by a conductive adhesive, respectively. However, in this embodiment, they may be bonded with solders 258a and 258c.

A molding part 260 is disposed around the light-emitting device 250, and the molding part 260 protects the light-emitting device 250 and may be made of a silicone-based resin.

A reflective member 210 is disposed in a peripheral area of the light emitting device 250, and the reflective member 210 may be made of polypthalamide (PPA), polycyclohexane dimethylene terephthalate (PCT), mold resin (EMC), or silicone.

A void is formed in a region where the reflective member 210 and the circuit board 280 are bonded to each other.

In the area in contact with the circuit board 280, the surface of the reflective member 210 is concave, and at this time, air is injected into the void between the concave bottom surface of the reflective member 210 and the circuit board 280 It could be.

The circuit board 280 and the reflective member 210 are in contact with each other in the inner region of the reflective member 210, that is, the region in contact with the molding part 260, but the edge region is the circuit board 280 and a predetermined height (h ), but the above-described height (h) may be in the scale of nanometers to micrometers.

The void has a concave curved surface, but in reality the surface may be irregular, and the height h of the void in the edge region of the reflective member is shown the largest, but in reality it may not. The cause of void formation is due to the formation cause of the reflective member and will be described later.

The circuit board 280 and the reflective member 210 may form a bottom surface and a sidewall, respectively, to form a cavity. In this case, the light emitting device 250 may be disposed on the bottom surface of the cavity.

In FIG. 2, the inner wall of the reflective member 210, that is, the surface facing the light emitting element 250 may be inclined as shown, and the inner wall i of the reflective member 210 forming the sidewall of the cavity Although not shown on the upper surface (b) of the circuit board 280 constituting the bottom surface of the cavity, a reflective material is formed to increase light extraction efficiency.

A phosphor may be disposed on the reflective member 210 and the molding unit 260. As shown, a phosphor 275 is disposed on the phosphor film 270 to generate light in the first wavelength region emitted from the light emitting device 250. May be converted into light in the second wavelength region.

3A to 3H are diagrams illustrating a manufacturing process of the light emitting device module of FIG. 2.

First, a sheet is prepared. As shown in FIG. 3A, the sheet 310 may be made of a base film 310a, an adhesive 310b, and a protective film 310c, and the adhesive 310b is a silicone adhesive. And the protective film 310c may be removed before placing the light emitting device 250 on the adhesive 310b.

The adhesive 310b has excellent fixing power of light-emitting elements and the like during laser scribing in a separation process to be described later, does not deform due to the heat resistance of silicon, and residues are removed when separated into each light-emitting element. May not remain. For this function, the silicone in the adhesive 310b may be mixed with trimethylated silica, poly-dimethyl siloxane, and poly ethylene terephtalate in a weight ratio of 10% to 60% to 30%, respectively.

The adhesive 310b serves to fix the light emitting element 250 to the sheet 310, but must be able to be easily separated in a separation process to be described later.

In FIG. 3B, a plurality of light-emitting elements 250 are disposed on the sheet 310, and the molding part 260 is coated on the sheet 310 so as to cover the light-emitting element 250. At this time, the sheet 310 may be made of a base sheet 310a and an adhesive 310b from which the above-described protective film 310c is removed, and the light emitting device 250 may be fixed through the adhesive 310b.

As shown in FIG. 3C, after moving and fixing the sheet 310 to the upper part of the molding part 260, a part of the molding part 260 is removed to prepare a region in which a reflective member, which will be described later, will be formed. In this case, the molding part 260 may be removed through etching, and as illustrated, the molding part 260 may be removed to be inclined in a peripheral region of each light emitting device 250.

In addition, as shown in FIG. 3D, a reflector material is filled in a region R in which a part of the molding part 260 is etched in FIG. 3C. At this time, the light emitting device 250, the molding part 260, the sheet 310, and the like are arranged in a reverse direction in FIG. 3C, and a reflector material is injected from the top as shown.

The reflective member material is as described above, and if the curing process is performed after the reflective member material is injected into the region R between the molding parts, the volume of the reflective member material decreases due to evaporation of some materials, and thus the reflective member Curvature may form on the upper surface of the material.

After curing of the reflective member material, a state in which the light emitting device 250, the molding part 260, and the sheet 310 are reversed in FIG. 3D is shown in FIG. 3E, and the lower part of the reflective member 210 A curvature may be formed on the surface in a concave direction.

Then, as shown in FIG. 3F, the upper sheet 310 is moved to the lower portion of the molding part 260 and the light emitting element 250, and the phosphor film 270 is coupled to the upper part of the molding part 260. The phosphor film 270 may be adhered to the molding part 260 or the reflective member 210 without using a separate adhesive material by using a silicon-based material.

Then, as shown in FIG. 3G, dicing is performed for each package unit. In this case, the circuit board 280 and the reflective member 210 are in contact with the inner region of the reflective member 210 in the region'A' of FIG. 3G, that is, the region in contact with the molding part 260, but the edge region is a circuit. It is spaced apart from the substrate 280 by a predetermined height h, and the above-described height h may be the same as that of FIG. 2.

In FIG. 3G, before the dicing process, the reflective member has the largest void height h in the central region, and may contact the substrate 310 in the edge region. In addition, since the central region of the reflective member is cut in the dicing process, the reflective member 210 may have the largest void height in the edge region of one light emitting device module as shown in FIG. 2.

In addition, as shown in FIG. 3H, when a plurality of light emitting device packages are fixed on the circuit board 280 after the dicing process for each package unit, the light emitting device module is completed. When bonding ), bonding through the above-described solder may be used. The light emitting device packages diced in FIG. 3G are coupled to one circuit board 280 spaced apart from each other in FIG. 3H, and detailed structures of each light emitting device package and the circuit board 280 may be as shown in FIG. 2. I can.

5A and 5B are views showing a color distribution of a conventional light emitting device package and a light emitting device module according to an embodiment. In the light emitting device module according to the embodiment, the wire and the lead frame are omitted, and the flip chip type light emitting device is directly coupled to the circuit board, thereby reducing material cost and reducing light absorption or blocking by the wire, thereby improving light efficiency. In addition, since a film-type phosphor is used, the color dispersion of light emitted from the light emitting device module can be improved compared to the conventional light emitting device package.

Hereinafter, an image display device and a lighting device will be described as an embodiment of a lighting system in which the above-described light emitting device package or module is disposed.

6 is a diagram illustrating an embodiment of an image display device including a light emitting device module.

As shown, the image display device 500 according to the present embodiment includes a light source module, a reflector 520 on the bottom cover 510, and light that is disposed in front of the reflector 520 and emitted from the light source module. The first prism sheet 550 and the second prism sheet 560 and the second prism sheet 560 are disposed in front of the light guide plate 540 to guide the image display device in front of the light guide plate 540. It includes a panel 570 disposed in front and a color filter 580 disposed in front of the panel 570.

The light source module includes the light emitting device package 535 on the circuit board 530 and may be the aforementioned light emitting device module.

The bottom cover 510 may accommodate components in the image display device 500. The reflector 520 may be provided as a separate component as shown in this drawing, or may be provided in a form coated with a material having high reflectivity on the rear surface of the light guide plate 540 or the front surface of the bottom cover 510.

The reflective plate 520 may be made of a material that has high reflectivity and can be used in an ultra-thin type, and may use PolyEthylene Terephtalate (PET).

The light guide plate 540 scatters light emitted from the light emitting device package module so that the light is uniformly distributed over the entire screen area of the liquid crystal display. Accordingly, the light guide plate 530 is made of a material having a good refractive index and transmittance, and may be formed of polymethylmethacrylate (PMMA), polycarbonate (PC), or polyethylene (PolyEthylene; PE). In addition, when the light guide plate 540 is omitted, an air guide type display device may be implemented.

The first prism sheet 550 is formed of a light-transmitting and elastic polymer material on one surface of the support film, and the polymer may have a prism layer in which a plurality of three-dimensional structures are repeatedly formed. Here, the plurality of patterns may be repeatedly provided in a stripe type of floors and valleys as shown.

In the second prism sheet 560, a direction of a floor and a valley on one side of the support film may be perpendicular to a direction of a floor and a valley on one surface of the support film in the first prism sheet 550. This is to evenly distribute the light transmitted from the light source module and the reflective sheet in all directions of the panel 570.

In this embodiment, the first prism sheet 550 and the second prism sheet 560 form an optical sheet, and the optical sheet is formed of a different combination, for example, a microlens array, or a diffusion sheet and a microlens array. It may be made of a combination or a combination of a single prism sheet and a micro lens array.

The panel 570 may include a liquid crystal display. In addition to the liquid crystal display panel 560, other types of display devices requiring a light source may be provided.

The panel 570 is in a state in which a liquid crystal is placed between the glass bodies and a polarizing plate is placed on both glass bodies in order to utilize the polarization of light. Here, the liquid crystal has an intermediate characteristic between a liquid and a solid, and the liquid crystal, which is an organic molecule having fluidity like a liquid, has a state that is regularly arranged like a crystal, and the molecular arrangement is changed by an external electric field. Display an image.

A liquid crystal display panel used in a display device is an active matrix type, and uses a transistor as a switch for controlling a voltage supplied to each pixel.

A color filter 580 is provided on the front surface of the panel 570 to transmit light projected from the panel 570 and transmit only red, green, and blue light for each pixel, thereby displaying an image.

7 is a diagram illustrating an embodiment of a lighting device in which a light emitting device module is disposed.

The lighting device according to the present embodiment may include a cover 1100, a light source module 1200, a radiator 1400, a power supply unit 1600, an inner case 1700, and a socket 1800. In addition, the lighting device according to the embodiment may further include any one or more of the member 1300 and the holder 1500, and the light source module 1200 includes the light emitting device package according to the above-described embodiments, and emits light. Since the angle of light emission can be adjusted by the cavity structure formed in the device, it is possible to have an effect of focusing light in a specific direction, so that the light emitting area can be adjusted without a separate device outside the lighting device.

The cover 1100 has a shape of a bulb or a hemisphere, is hollow, and may be provided in an open shape. The cover 1100 may be optically coupled to the light source module 1200. For example, the cover 1100 may diffuse, scatter, or excite light provided from the light source module 1200. The cover 1100 may be a kind of optical member. The cover 1100 may be coupled to the radiator 1400. The cover 1100 may have a coupling portion coupled to the radiator 1400.

A milky white paint may be coated on the inner surface of the cover 1100. The milky white paint may include a diffuser that diffuses light. The surface roughness of the inner surface of the cover 1100 may be greater than the surface roughness of the outer surface of the cover 1100. This is to allow the light from the light source module 1200 to be sufficiently scattered and diffused to be emitted to the outside.

The material of the cover 1100 may be glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance, and strength. The cover 1100 may be transparent or opaque so that the light source module 1200 can be seen from the outside. The cover 1100 may be formed through blow molding.

The light source module 1200 may be disposed on one surface of the radiator 1400. Accordingly, heat from the light source module 1200 is conducted to the radiator 1400. The light source module 1200 may include a light emitting device package 1210, a connection plate 1230, and a connector 1250, and may be the aforementioned light emitting device module.

The member 1300 is disposed on the upper surface of the radiator 1400 and has guide grooves 1310 into which a plurality of light emitting device packages 1210 and a connector 1250 are inserted. The guide groove 1310 corresponds to the substrate and the connector 1250 of the light emitting device package 1210.

The surface of the member 1300 may be coated or coated with a light reflective material. For example, the surface of the member 1300 may be coated or coated with a white paint. The member 1300 reflects light reflected on the inner surface of the cover 1100 and returned toward the light source module 1200 toward the cover 1100. Therefore, it is possible to improve the light efficiency of the lighting device according to the embodiment.

The member 1300 may be made of an insulating material, for example. The connection plate 1230 of the light source module 1200 may include an electrically conductive material. Accordingly, electrical contact may be made between the radiator 1400 and the connection plate 1230. The member 1300 is made of an insulating material to block an electrical short between the connection plate 1230 and the radiator 1400. The radiator 1400 receives heat from the light source module 1200 and heat from the power supply unit 1600 to radiate heat.

The holder 1500 blocks the receiving groove 1919 of the insulating part 1710 of the inner case 1700. Accordingly, the power supply unit 1600 accommodated in the insulating unit 1710 of the inner case 1700 is sealed. The holder 1500 has a guide protrusion 1510. The guide protrusion 1510 has a hole through which the protrusion 1610 of the power supply unit 1600 passes.

The power supply unit 1600 processes or converts an electrical signal provided from the outside and provides it to the light source module 1200. The power supply unit 1600 is accommodated in the storage groove 1719 of the inner case 1700 and is sealed inside the inner case 1700 by the holder 1500. The power supply unit 1600 may include a protrusion 1610, a guide unit 1630, a base 1650, and an extension 1670.

The guide part 1630 has a shape protruding outward from one side of the base 1650. The guide part 1630 may be inserted into the holder 1500. A number of components may be disposed on one surface of the base 1650. A number of components include, for example, a DC converter that converts AC power provided from an external power source to DC power, a driving chip that controls driving of the light source module 1200, and an ESD for protecting the light source module 1200. (ElectroStatic discharge) may include a protection element, but is not limited thereto.

The extension part 1670 has a shape protruding outward from the other side of the base 1650. The extension part 1670 is inserted into the connection part 1750 of the inner case 1700 and receives an electrical signal from the outside. For example, the extension part 1670 may be provided equal to or smaller than the width of the connection part 1750 of the inner case 1700. Each end of the "+ wire" and "- wire" may be electrically connected to the extension part 1670, and the other ends of the "+ wire" and the "- wire" may be electrically connected to the socket 1800.

The inner case 1700 may include a molding unit together with the power supply unit 1600 therein. The molding part is a part where the molding liquid is solidified, and allows the power supply part 1600 to be fixed inside the inner case 1700.

Although the embodiments have been described above, these are only examples and do not limit the present invention, and those of ordinary skill in the field to which the present invention belongs are not exemplified above without departing from the essential characteristics of the present embodiment. It will be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified and implemented. And differences related to these modifications and applications should be construed as being included in the scope of the present invention defined in the appended claims.

10: light emitting device 100, 250: light emitting device package
110: package body 121, 122: first and second lead frames
140, 145: wire 160: molding part
165: phosphor 210: reflective member
251: substrate 252: buffer layer
254: light emitting structures 256a, 256c: first and second electrodes
258a, 258c: solder 270: phosphor film
275: phosphor 280: circuit board
281, 282: first and second conductive layers 310: sheet
310a: base film 310b: adhesive
310c: protective film 500: image display device

Claims (11)

Circuit board;
At least one flip chip type light emitting device bonded to the conductive layer of the circuit board with a conductive adhesive; And
Including a reflective member disposed in the peripheral region of each of the light-emitting elements,
A void is formed in a region where the reflective member and the circuit board contact,
The surface of the reflective member is formed concave in a region in contact with the circuit board,
The reflective member contacts the substrate in an inner region in the direction of the light emitting element, and the height of the void is largest in an outer region opposite to the inner region,
A plurality of grooves are formed on the upper surface of the circuit board, a first conductive layer and a second conductive layer are inserted into the plurality of grooves, and the first conductive layer and the second conductive layer are electrically connected to the light emitting device. Light-emitting element module. delete The method of claim 1,
A light emitting device module in which air is filled in the void. delete The method of claim 1,
The reflective member includes at least one of PPA, PCT, EMC, and silicon. delete The method of claim 1,
The circuit board and the reflective member form a bottom surface and a sidewall of the cavity, respectively, the light emitting device is disposed on the bottom surface of the cavity, and a surface facing the light emitting device is inclined. delete The method of claim 1,
Further comprising a molding portion disposed surrounding the light-emitting element, and a phosphor disposed on the reflective member and the molding portion,
The phosphor is a light emitting device module arranged in a film type. delete delete

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