KR102137745B1 - Light emittng device and light emitting device package including the same - Google Patents

Abstract

Examples include sub-mounts; A plurality of protruding structures disposed on the sub-mount and formed of a first conductive semiconductor layer; An active layer and a second conductivity type semiconductor layer disposed on side and top surfaces of each of the protruding structures; A metal layer disposed on the second conductivity type semiconductor layer and filling a gap between each of the protruding structures; And a first electrode and a second electrode electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively.

Description

Light emitting device and a light emitting device package including the same {LIGHT EMITTNG DEVICE AND LIGHT EMITTING DEVICE PACKAGE INCLUDING THE SAME}

The embodiment relates to a light emitting device and a light emitting device package including the same.

Group 3-5 compound semiconductors such as GaN and AlGaN are widely used for optoelectronics and electronic devices due to many advantages such as having a wide and easily adjustable band gap energy.

In particular, light emitting devices such as light emitting diodes or laser diodes using semiconductor group 3 or 2-6 compound semiconductor materials of semiconductors include red, green, blue and ultraviolet light through thin film growth technology and development of device materials. Various colors can be realized, and white light with high efficiency can be realized by using fluorescent materials or combining colors, and low power consumption, semi-permanent life, fast response speed, safety, and environment compared to conventional light sources such as fluorescent lamps and incandescent lamps It has the advantage of affinity.

Therefore, a light emitting diode backlight that replaces a Cold Cathode Fluorescence Lamp (CCFL) constituting a backlight of a transmission module of an optical communication means, a backlight of a liquid crystal display (LCD) display device, and white light emission that can replace a fluorescent lamp or an incandescent light bulb Applications are expanding to diode lighting devices, automotive headlights and traffic lights.

1 is a view showing a conventional light emitting device.

In the conventional light emitting device 100, a light emitting structure 120 including a first conductive semiconductor layer 122, an active layer 124, and a second conductive semiconductor layer 126 is formed on a substrate 110 made of sapphire or the like. The first electrode 150 and the second electrode 160 are disposed on the first conductivity type semiconductor layer 122 and the second conductivity type semiconductor layer 126, respectively.

The light emitting device 100 is in the energy band unique to the material forming the active layer 124 when electrons injected through the first conductivity type semiconductor layer 122 and holes injected through the second conductivity type semiconductor layer 126 meet each other. Emits light with energy determined by. The light emitted from the active layer 124 may vary depending on the composition of the material constituting the active layer 124, and may be blue light, ultraviolet light (UV), deep ultraviolet light, or light in a different wavelength range.

The active layer 124 includes a double heterostructure, a single quantum well structure, a multi-quantum well (MQW) structure, a quantum-wire structure, or a quantum dot structure. It can be formed as.

The above-described conventional light emitting device has the following problems.

Since the substrate and the light emitting structure are heterogeneous materials, the lattice mismatch is very large and the difference in coefficient of thermal expansion therebetween is also large, so dislocation, melt-back, and cracks that deteriorate crystallinity. (Crack), pit (pit), surface morphology (surface morphology) defects may occur.

In order to solve the above-described problem, the buffer layer 115 may be formed as shown in FIG. 1, but a potential may still be formed to deteriorate the quality of the light emitting structure, and heat energy is emitted from the light emitting structure rather than light energy from the active layer. This can lower the efficiency of the light emitting element itself.

The embodiment is intended to improve the quality of the light emitting device and increase the light efficiency.

Examples include sub-mounts; A plurality of protruding structures disposed on the sub-mount and formed of a first conductive semiconductor layer; An active layer and a second conductivity type semiconductor layer disposed on side and top surfaces of each of the protruding structures; A metal layer disposed on the second conductivity type semiconductor layer and filling a gap between each of the protruding structures; And a first electrode and a second electrode electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively.

The light emitting device further includes a conductive layer disposed on the surface of the second conductive type semiconductor layer and a reflective layer disposed on the surface of the conductive layer, and the metal layer can contact the reflective layer.

The light emitting device is disposed on the submount, and may further include a mask dividing the plurality of protruding structures.

The first conductivity type semiconductor layer may include a base layer disposed on the front surface of the sub-mount and the protruding structures separated from each other by the mask.

The metal layer is divided into two regions electrically separated from each other, and the first electrode and the second electrode may be disposed in the first region and the second region, respectively.

The upper surface of the protruding structure may be inclined at an obtuse angle with the side surface.

The conductive layer may be a transparent conductive oxide or a mixed metal oxide.

Further comprising an insulating layer disposed on the second conductive type semiconductor layer and filling a gap between each of the protruding structures, the upper surface of the protruding structure is exposed to the outside of the insulating layer, and the upper portion of the exposed protruding structure The metal layer may fill the surface.

The metal layer can be formed by electroplating.

Other embodiments include a substrate; A first electrode pad and a second electrode pad disposed on the substrate; And the above-described light emitting device disposed on the substrate, wherein the first electrode pad and the second electrode pad provide a light emitting device package in direct contact with the first electrode and the second electrode of the light emitting device, respectively.

In the light emitting device according to the present embodiment, a metal layer is formed as a gap filling layer by an electroplating method between the protruding structures of a fine size to stably support the nanostructure, and the metal layer formed by the electroplating method has a flat surface to emit light. The first electrode and the second electrode of the light emitting element can be directly bonded to the electrode pad on the substrate without using bumps when disposing in the device package.

1 is a view showing a conventional light emitting device,
2 is a view showing a first embodiment of a light emitting device,
3A to 3E are views showing an embodiment of a method of manufacturing a light emitting device,
4 is a view showing a second embodiment of a light emitting device,
5 is a view showing a light emitting device package in which the light emitting device of FIG. 2 is disposed in a flip chip type,
6 is a view showing an embodiment of a backlight unit in which a light emitting element is disposed,
7 is a view showing an embodiment of a lighting device in which a light emitting element is disposed.

Hereinafter, embodiments of the present invention capable of specifically realizing the above object will be described with reference to the accompanying drawings.

In the description of the embodiment according to the present invention, when described as being formed on "on (up) or down (down)" (on or under) of each element, the top (top) or bottom (bottom) (on or under) includes both two elements directly contacting each other or one or more other elements formed indirectly between the two elements. Also, when expressed as “on (up) or down (on or under)”, it may include the meaning of the downward direction as well as the upward direction based on one element.

2 is a view showing a first embodiment of a light emitting device.

The light emitting device 200 includes a metal layer 260 and 270 filling a gap between the sub-mount 210, the light-emitting structure 220 on the sub-mount, and each protruding structure 222b, and the first electrode ( 265) and a second electrode 275.

The sub-mount 210 may be formed of a material suitable for semiconductor material growth or a carrier wafer, may be formed of a material having excellent thermal conductivity, and may include a conductive substrate or an insulating substrate. For example, at least one of sapphire (Al ₂ O ₃ ), SiO ₂ , SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, and Ga ₂ 0 ₃ may be used.

When the sub-mount 210 is formed of sapphire or the like and the light-emitting structure 220 including GaN or AlGaN is disposed on the sub-mount 210, lattice mismatch between GaN or AlGaN and sapphire is caused. Because they are very large and the difference in coefficient of thermal expansion between them is very large, dislocation, melt-back, crack, pit, poor surface morphology, etc. that deteriorate crystallinity Since this may occur, a buffer layer (not shown) may be formed of AlN or the like.

Although not shown, an undoped GaN layer or an AlGaN layer is disposed between the buffer layer (not shown) and the light emitting structure 220 to prevent transmission of the above-described potential and the like into the light emitting structure 220.

The light emitting structure 220 includes a first conductivity type semiconductor layer 222, an active layer 224, and a second conductivity type semiconductor layer 226. The light emitting structure 220 may include a plurality of nano rod shapes.

More specifically, the first conductivity-type semiconductor layer 222 includes a base layer 222a and a protruding structure 222b. The base layer 222a may be formed as a thin thin film on the front surface of the sub-mount 210. The protrusion structure 222b may be formed by growing a plurality of protrusion structures on the base layer 222a.

The protruding structure 222b has side surfaces arranged in a vertical direction from the base layer 222a as shown, and the top surface is arranged at an obtuse angle with the side surfaces. In addition, the upper surface of the protruding structure 222b is flat and may be provided at a right angle to the side surface, and is the same in the embodiments described below.

The protruding structure 222b has a nano-scale size R in the horizontal direction, but may have a scale of about 10 micrometers in some cases. The size R in the horizontal direction of the protruding structure 222b may be greater than the distance d between adjacent masks 280, for example, R may be twice or more of d. The above-described distance (d) may be the diameter of the opening between adjacent masks 280 on which the protruding structures 222b can be grown from the base layer 222a.

The height h ₁ of the base layer 222a in the first conductivity-type semiconductor layer 222 may be 100 nanometers to 10 micrometers. If it is smaller than 100 nanometers, the growth of the first conductivity-type semiconductor layer 222 May not be sufficient, and if it is larger than 10 micrometers, the thickness of the light emitting structure 220 may increase.

The pitch h between the height h ₂ of the protruding structure 222b and the protruding structure 222b may vary according to the wavelength and the amount of light emitted from the light emitting structure 220.

The protruding structures may be hexagonal columns or circular or polygonal in cross section, and each protruding structure may be irregularly arranged in addition to the regular arrangement, and the size or shape of each protruding structure may be the same but may be different.

In FIG. 2, the base layer 222a and the protruding structure 222b are partitioned with a dotted line, but may be made of the same material, and may be grown before and after using the mask 280, respectively. The mask 280 may divide the base layer 222a and the protruding structure 222b, and may also divide each protruding structure 222b.

The first conductivity-type semiconductor layer 222 may be formed of a compound semiconductor such as a III-V group or a II-VI group, and the first conductivity-type dopant may be doped. The first conductive semiconductor layer 222 is a semiconductor material having a composition formula of Al _x In _y Ga _(1-xy) N (0≤x≤1, 0≤y≤1, 0≤x+y≤1), AlGaN , GaN, InAlGaN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP.

When the first conductivity-type semiconductor layer 222 is an n-type semiconductor layer, the first conductivity-type dopant may include an n-type dopant such as Si, Ge, Sn, Se, Te, or the like. The first conductivity-type semiconductor layer 222 may be formed as a single layer or multiple layers, but is not limited thereto.

When the light emitting device 200 is an ultraviolet (UV) or deep ultraviolet (Deep UV) light emitting device, the first conductive semiconductor layer 222 may include at least one of InAlGaN and AlGaN.

The active layer 224 and the second conductivity-type semiconductor layer 226 may be formed as thin films on the periphery of the protruding structure 222b, that is, the side and top surfaces, and the mask 280.

The active layer 224 is disposed between the first conductivity type semiconductor layer 222 and the second conductivity type semiconductor layer 226, and has a single well structure, a double well structure, a single quantum well structure, and a multiple quantum well. (MQW: Multi Quantum Well) structure, a quantum dot structure or a quantum wire structure.

The active layer 224 is a well layer and a barrier layer using a compound semiconductor material of a group III-V element, for example, AlGaN/AlGaN, InGaN/GaN, InGaN/InGaN, AlGaN/GaN, InAlGaN/GaN, GaAs (InGaAs) It may be formed of any one or more pair structure of /AlGaAs, GaP (InGaP) / AlGaP, but is not limited thereto.

The well layer may be formed of a material having an energy band gap smaller than the energy band gap of the barrier layer. When the active layer 224 generates light having a deep UV wavelength, the active layer 224 may be formed of a multi-quantum well structure, and in detail, Al _x Ga _(1-x) N (0<x< The quantum well structure including a quantum wall containing 1) and Al _y Ga _(1-y) N (0<x<y<1) may be a multi-quantum well structure having a pair structure of 1 cycle or more, and May include a second conductivity type dopant, which will be described later.

The second conductivity-type semiconductor layer 226 may be formed of a semiconductor compound. The second conductivity-type semiconductor layer 226 may be formed of a compound semiconductor such as a III-V group or a II-VI group, and the second conductivity-type dopant may be doped. The second conductive semiconductor layer 226 is, for example, In _x Al _y Ga _{1 -xy} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) semiconductor material having a composition formula, AlGaN , GaN AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP may be formed of any one or more, for example, the second conductive semiconductor layer 226 may be made of Al _x Ga _(1-x) N.

When the second conductivity-type semiconductor layer 226 is a p-type semiconductor layer, the second conductivity-type dopant may be a p-type dopant such as Mg, Zn, Ca, Sr or Ba. The second conductivity-type semiconductor layer 226 may be formed as a single layer or multiple layers, but is not limited thereto. If the light emitting device 200 is an ultraviolet (UV) or deep ultraviolet (Deep UV) light emitting device, the second conductivity type semiconductor layer 226 may include at least one of InAlGaN and AlGaN.

Although not illustrated, an electron blocking layer may be disposed between the active layer 224 and the second conductivity type semiconductor layer 226. The electron blocking layer may be formed of a superlattice structure, and for example, AlGaN doped with a second conductivity type dopant may be disposed, and GaN having a different composition ratio of aluminum may be formed as a layer. A plurality may be alternately arranged.

Since the active layer 224 and the second conductivity-type semiconductor layer 226 are thin thin films, a gap is formed between each protruding structure 222b where the active layer 224 and the second conductivity-type semiconductor layer 226 are grown. This exists, and in each gap, a metal layer 270 may be formed by electroplating as a gap filling layer.

The metal layer 270 is made of a conductive metal, and stably supports each protruding structure 222b and can supply holes or electrons evenly to the entire region of the second conductive semiconductor layer 226.

In addition, a conductive layer 240 and a reflective layer 250 are disposed on the surface of the second conductive semiconductor layer 226 so that the conductive layer 240 contacts the second conductive semiconductor layer 240 and the reflective layer 250. The silver metal layer 270 may be contacted.

The conductive layer 240 may have high optical transmittance while having ohmic characteristics, and may include a transparent conductive oxide or a mixed metal oxide, and more specifically, the transparent conductive oxide may include ITO, IZO, AZO, ZnO, SnO _x , and the mixed metal oxide may be RuO _x , IrO _x , PtO _x .

The current supplied through the metal layer 270 and the reflective layer 250 can be evenly transmitted to the second conductivity type semiconductor layer 226. The reflective layer 250 may be any one of silver (Ag), aluminum (Al), and rhodium (Rh), or an alloy thereof. The metal layer 270 may be a material selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, PT and Au or alloys thereof.

The metal layers 260 and 270 are divided into two regions electrically separated from each other, and the first electrode 265 and the second electrode 275 may be disposed in the first region and the second region, respectively. The metal layer 260 in the first region may be electrically connected to the first conductivity type semiconductor layer 222, and the metal layer 270 in the second region may be electrically connected to the second conductivity type semiconductor layer 226.

The metal layers 260 and 270 may be divided into a first region and a second region on the base layer 222a of the first conductivity-type semiconductor layer 222.

The first electrode 250 and the second electrode 260 include a single layer including at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (Au) Or it may be formed in a multi-layer structure.

When forming an electrode on a nanostructure, it is difficult to stably place an electrode due to the aspect ratio of the nanostructure, and when an electrode is formed on the upper surface of the nanostructure, it is difficult to supply current to the entire surface of the nanostructure.

In the light emitting device according to the present embodiment, a metal layer is formed as a gap filling layer by an electroplating method between the protruding structures of a fine size to stably support the nanostructure, and the metal layer formed by the electroplating method has a flat surface to emit light. The first electrode and the second electrode of the light emitting element can be directly bonded to the electrode pad on the substrate without using bumps when disposing in the device package.

In addition, transparent conductive oxide (TCO) or mixed metal oxide (MMO) is disposed on the surface of the protruding structure to smoothly supply current to the entire surface of the second conductive type semiconductor layer, and the reflective layer is disposed to improve reflectivity. In addition, a transparent conductive oxide or a mixed metal oxide is disposed between the reflective layer and the second conductive type semiconductor layer, so that low non-contact resistance can be exhibited.

3A to 3E are views showing an embodiment of a method of manufacturing a light emitting device.

As illustrated in FIG. 3A, the light emitting structure 220 may be grown on the submount 210. Specifically, it is as follows.

The base layer 222a of the first conductivity type semiconductor layer is grown on the sub-mount 210, and after the mask 280 is selectively disposed, the protruding structure 222b of the first conductivity type semiconductor layer is grown to protrude. Structure 222b is selectively grown between masks 280.

The first conductivity type semiconductor layer 222 is grown in the shape of a protruding structure as shown, so dislocations grown at the interface with the substrate 210 may not be blocked in the upward direction of the drawing, but may be blocked.

Then, the active layer 224 and the second conductivity type semiconductor layer 226 are grown on the protruding structure 222b. Compositions of the first conductivity type semiconductor layer 222, the active layer 224, and the second conductivity type semiconductor layer 226 may be the same as described above.

3B, the conductive layer 240 is formed on the surface of the second conductive semiconductor layer 226 by growth or deposition. The conductive layer 240 may be formed in the same shape as the surface of the protruding structure 222b.

3C, a metal layer 250 is formed on the surface of the conductive layer 240 by growth or deposition. The metal layer 250 may be formed in the same shape as the surfaces of the protruding structure 222b and the conductive layer 240.

In addition, as shown in FIG. 3D, a metal layer 260 or 270 is formed by filling a gap between each protruding structure 222b with a conductive metal or the like by electroplating or the like.

As shown in FIG. 3E, the metal layers 260 and 270 may be divided into two regions. One metal layer 260 may be electrically connected to the first conductivity type semiconductor layer 222, and the other metal layer 270 may be electrically connected to the second conductivity type semiconductor layer 226.

In addition, when the first electrode and the second electrode are formed on each of the metal layers 260 and 270, the light emitting device of FIG. 2 may be completed.

4 is a view showing a second embodiment of a light emitting device.

The light emitting device 200 according to this embodiment is similar to the embodiment of FIG. 2, but differs in that the insulating layer 290 fills the gap between the protruding structures 222b. The insulating layer 290 may be made of an insulating material, for example, non-conductive oxide or nitride. As an example, the insulating layer 290 may be formed of a silicon oxide (SiO ₂ ) layer, an oxide nitride layer, or an aluminum oxide layer.

Since the height of the insulating layer 290 is lower than the height of the protruding structure 222b, the upper surface of the protruding structure 222b may be exposed over the insulating layer 290. The metal layer 250 fills the gap between the exposed protruding structures 222b.

5 is a view showing a light emitting device package in which the light emitting devices of FIG. 2 and the like are disposed in a flip chip type, and a first electrode pad 321 and a second electrode pad 322 are bonded on a substrate 300 having a cavity. It can be fixed through 310. In FIG. 5, side walls of the cavity formed in the substrate 300 are disposed at an obtuse angle with the bottom surface, but may be disposed at a right angle.

In addition, the light emitting device 200 may be arranged in a flip chip type with the top/bottom reversed in FIG. 2, wherein the first electrode 265 and the second electrode 275 of the light emitting device 200 are respectively first electrodes. The pad 321 and the second electrode pad 322 may be directly bonded.

This structure does not require a separate bump for coupling between the electrode and the electrode pad, and the light emitted from the light emitting structure 220 may proceed in the upper direction of FIG. 4 in the reflective layer 250.

In addition to the above-described configuration, the light emitting device package may include a configuration such as a phosphor or a molding part.

The light emitting device package may be mounted as one or a plurality of light emitting devices according to the above-described embodiments, but is not limited thereto.

Hereinafter, an image display device and a lighting device will be described as an embodiment of the lighting system in which the above-described light emitting device package is disposed.

6 is a view showing an embodiment of an image display device including a light emitting device package.

As shown, the image display apparatus 500 according to the present embodiment is disposed in front of the light source module, the reflector 520 on the bottom cover 510, and the reflector 520, the light emitted from the light source module The light guide plate 540 for guiding the front of the image display device, the first prism sheet 550 and the second prism sheet 560 disposed in front of the light guide plate 540, and the second prism sheet 560 It comprises a panel 570 disposed in front and a color filter 580 disposed in front of the panel 570.

The light source module includes a light emitting device package 535 on the circuit board 530. Here, as the circuit board 530, a PCB or the like can be used, and the light emitting device of the light emitting device package 535 has a metal layer formed between the protruding structures having a fine size as a gap filling layer by an electroplating method to form a nanostructure. The metal layer formed stably by the electroplating method has a flat surface and directly bonds the first electrode and the second electrode of the light emitting element to the electrode pad on the substrate without using bumps when the light emitting element is placed in the light emitting element package. can do.

The bottom cover 510 may store components in the image display device 500. The reflector 520 may be provided as a separate component, as shown in the figure, or may be provided in a form coated with a material having high reflectivity on the back of the light guide plate 540 or the front of the bottom cover 510.

The reflector 520 may use a material having a high reflectance and an ultra-thin type, and may use polyethylene terephthalate (PET).

The light guide plate 540 scatters the light emitted from the light emitting device package module so that the light is uniformly distributed over the entire screen area of the liquid crystal display. Therefore, the light guide plate 530 is made of a material having good refractive index and transmittance, and may be formed of polymethyl methacrylate (PMMA), polycarbonate (PC), or polyethylene (polyethylene). Also, when the light guide plate 540 is omitted, an air guide type display device may be implemented.

The first prism sheet 550 is formed of a polymer material having a light transmissive elasticity on one surface of a support film, and the polymer may have a prism layer in which a plurality of three-dimensional structures are repeatedly formed. Here, the plurality of patterns may be repeatedly provided in a stripe type as the floor and the valley as shown.

In the second prism sheet 560, the direction of the floors and valleys of one side of the support film may be perpendicular to the direction of the floors and valleys of one side of the support film in the first prism sheet 550. This is to evenly distribute the light transmitted from the light source module and the reflective sheet in all directions of the panel 570.

In this embodiment, the first prism sheet 550 and the second prism sheet 560 form an optical sheet, the optical sheet is made of a different combination, for example, a micro lens array or a diffusion sheet and a micro lens array. Combination or a combination of a single prism sheet and a micro lens array.

The panel 570 may be provided with a liquid crystal display panel, and other types of display devices that require a light source may be provided in addition to the liquid crystal display panel 560.

In the panel 570, a liquid crystal is positioned between the glass bodies and a polarizing plate is placed on both glass bodies in order to use polarization of light. Here, the liquid crystal has an intermediate property between a liquid and a solid, and the liquid crystal, which is an organic molecule having liquidity, has a state in which the liquid crystals are regularly arranged like crystals, and the molecular arrangement is changed by an external electric field. Display an image.

A liquid crystal display panel used in a display device is an active matrix method, and a transistor is used as a switch for controlling the voltage supplied to each pixel.

A color filter 580 is provided on the front surface of the panel 570 to transmit the light projected from the panel 570 and transmit only red, green, and blue light for each pixel, so that an image can be expressed.

7 is a view showing an embodiment of a lighting device in which a light emitting element is disposed.

The lighting device according to the present embodiment may include a cover 1100, a light source module 1200, a heat radiator 1400, a power supply unit 1600, an inner case 1700, and a socket 1800. In addition, the lighting device according to the embodiment may further include any one or more of the member 1300 and the holder 1500, the light source module 1200 includes a light emitting device package according to the above-described embodiments, light emission When the device is formed of a gap-filling layer by a metal layer between the microscopic projecting structures, the nano-structure is stably supported, and the metal layer formed by the electroplating method has a flat surface to place the light-emitting device in the light-emitting device package. The first electrode and the second electrode of the light emitting device can be directly bonded to the electrode pad on the substrate without using bumps.

The cover 1100 has a shape of a bulb or a hemisphere, is hollow, and may be provided in an open shape. The cover 1100 may be optically coupled to the light source module 1200. For example, the cover 1100 may diffuse, scatter, or excite light provided from the light source module 1200. The cover 1100 may be a kind of optical member. The cover 1100 may be combined with the heat sink 1400. The cover 1100 may have a coupling portion coupled to the heat radiator 1400.

A milky white coating may be coated on the inner surface of the cover 1100. The milky white paint may include a diffusion material that diffuses light. The surface roughness of the inner surface of the cover 1100 may be greater than the surface roughness of the outer surface of the cover 1100. This is for light from the light source module 1200 to be sufficiently scattered and diffused to be emitted to the outside.

The material of the cover 1100 may be glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate has excellent light resistance, heat resistance, and strength. The cover 1100 may be transparent so that the light source module 1200 is visible from the outside, and may be opaque. The cover 1100 may be formed through blow molding.

The light source module 1200 may be disposed on one surface of the heat radiator 1400. Thus, heat from the light source module 1200 is conducted to the heat sink 1400. The light source module 1200 may include a light emitting device package 1210, a connection plate 1230, and a connector 1250.

The member 1300 is disposed on the upper surface of the heat sink 1400, and has a plurality of light emitting device packages 1210 and guide grooves 1310 into which the connector 1250 is inserted. The guide groove 1310 corresponds to the substrate and connector 1250 of the light emitting device package 1210.

The surface of the member 1300 may be coated or coated with a light reflective material. For example, the surface of the member 1300 may be coated or coated with a white paint. The member 1300 reflects light that is reflected on the inner surface of the cover 1100 and returns to the direction of the light source module 1200 again in the direction of the cover 1100. Therefore, it is possible to improve the light efficiency of the lighting device according to the embodiment.

The member 1300 may be made of an insulating material, for example. The connection plate 1230 of the light source module 1200 may include an electrically conductive material. Therefore, electrical contact may be made between the heat sink 1400 and the connection plate 1230. The member 1300 may be formed of an insulating material to block electrical shorts between the connection plate 1230 and the heat sink 1400. The heat radiator 1400 receives heat from the light source module 1200 and heat from the power supply unit 1600 to radiate heat.

The holder 1500 closes the storage groove 1719 of the insulating portion 1710 of the inner case 1700. Therefore, the power supply unit 1600 accommodated in the insulating portion 1710 of the inner case 1700 is sealed. The holder 1500 has a guide projection 1510. The guide protrusion 1510 has a hole through which the protrusion 1610 of the power supply unit 1600 passes.

The power supply unit 1600 processes or converts an electrical signal provided from the outside and provides it to the light source module 1200. The power supply unit 1600 is accommodated in the storage groove 1719 of the inner case 1700 and is sealed inside the inner case 1700 by the holder 1500. The power supply unit 1600 may include a protrusion 1610, a guide 1630, a base 1650, and an extension 1670.

The guide portion 1630 has a shape protruding from the side of the base 1650 to the outside. The guide part 1630 may be inserted into the holder 1500. A plurality of parts may be disposed on one surface of the base 1650. The plurality of components include, for example, a DC converter for converting AC power provided from an external power source into DC power, a driving chip controlling driving of the light source module 1200, and ESD for protecting the light source module 1200. (ElectroStatic discharge) may include a protection element, but is not limited thereto.

The extension 1670 has a shape protruding from the other side of the base 1650 to the outside. The extension part 1670 is inserted into the connection part 1750 of the inner case 1700 and receives an electrical signal from the outside. For example, the extension part 1670 may be provided equal to or smaller than the width of the connection part 1750 of the inner case 1700. Each end of the "+ wire" and the "- wire" is electrically connected to the extension 1670, and the other end of the "+ wire" and "- wire" can be electrically connected to the socket 1800. .

The inner case 1700 may include a molding part together with the power supply part 1600. The molding part is a part in which the molding liquid is hardened, so that the power supply unit 1600 can be fixed inside the inner case 1700.

The embodiments have been mainly described above, but this is merely an example, and is not intended to limit the present invention. Those of ordinary skill in the art to which the present invention pertains are not exemplified above, without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be implemented by modification. And differences related to these modifications and applications should be construed as being included in the scope of the invention defined in the appended claims.

100, 200: light-emitting element 115: buffer layer
120, 220: light emitting structure 120, 222: a first conductive semiconductor layer
124: active layer 126, 226: second conductivity type semiconductor
150, 265: first electrode 169, 275: second electrode
222a: base layer 222b: projecting structure
240: conductive layer 250: reflective layer
260, 270: metal layer 280: mask
290: insulating layer 300: substrate
310: bonding layer 321: first electrode pad
322: second electrode pad 400: light emitting device package

Claims (10)

Sub-mount;
A plurality of protruding structures disposed on the sub-mount and formed of a first conductive semiconductor layer;
An active layer and a second conductivity type semiconductor layer disposed on side and top surfaces of each of the protruding structures;
An insulating layer disposed on the second conductive type semiconductor layer and filling a gap in a lower region between the respective protruding structures;
A metal layer disposed on the second conductivity type semiconductor layer and filling a gap in an upper region between the respective protruding structures;
A first electrode and a second electrode electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively;
A conductive layer disposed on the surface of the second conductive type semiconductor layer;
It includes a reflective layer disposed on the surface of the conductive layer,
The metal layer is in contact with the reflective layer, the upper surface of the protruding structure is inclined at an obtuse angle with the side,
The height of the interface between the insulating layer and the metal layer is the same as the inclined upper surface of the protruding structure,
The metal layer is electrically separated from each other and divided into two regions having a flat top surface, the first electrode and the second electrode are disposed in the first region and the second region, respectively, and the first region of the metal layer is The height of the upper surface and the height of the upper surface of the second region are the same as each other. According to claim 1,
It is disposed on the sub-mount, further comprising a plurality of masks for dividing the plurality of protruding structures,
The first conductive semiconductor layer includes the base layer disposed on the front surface of the sub-mount and the protruding structures separated from each other by the mask,
The size of the projecting structure in the horizontal direction is greater than the distance between adjacent masks. delete delete According to claim 1,
The conductive layer is a light emitting device that is a transparent conductive oxide or a mixed metal oxide. delete delete Board;
A first electrode pad and a second electrode pad disposed on the substrate; And
The light emitting device of any one of claims 1, 2, and 5 disposed on the substrate,
The first electrode pad and the second electrode pad, the light emitting device package in direct contact with the first electrode and the second electrode of the light emitting device, respectively. delete delete

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