KR102007408B1 - Light emittng device - Google Patents

Light emittng device Download PDF

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Publication number
KR102007408B1
KR102007408B1 KR1020130006311A KR20130006311A KR102007408B1 KR 102007408 B1 KR102007408 B1 KR 102007408B1 KR 1020130006311 A KR1020130006311 A KR 1020130006311A KR 20130006311 A KR20130006311 A KR 20130006311A KR 102007408 B1 KR102007408 B1 KR 102007408B1
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South Korea
Prior art keywords
light emitting
semiconductor layer
emitting structure
conductive semiconductor
island
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KR1020130006311A
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Korean (ko)
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KR20140094093A (en
Inventor
이용경
김명수
최병연
홍기석
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엘지이노텍 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

Embodiments include a substrate; A light emitting structure disposed on the substrate, the light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer formed between the first conductive semiconductor layer and the second conductive semiconductor layer; And a first electrode and a second electrode disposed on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, wherein the first conductive layer is formed from a surface of the second conductive semiconductor layer in the light emitting structure. A mesa region from which a portion of the semiconductor semiconductor layer is removed is formed, and an island light emitting structure in which the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer are arranged in an island shape is formed in at least one of the mesa regions. Provided is one light emitting device.

Description

Light Emitting Device {LIGHT EMITTNG DEVICE}

The embodiment relates to a light emitting device.

Group 3-5 compound semiconductors, such as GaN and AlGaN, are widely used for optoelectronics and electronic devices due to many advantages, such as having a wide and easy to adjust band gap energy.

In particular, light emitting devices such as light emitting diodes or laser diodes using semiconductors of Group 3-5 or 2-6 compound semiconductor materials of semiconductors have been developed through the development of thin film growth technology and device materials such as red, green, blue and ultraviolet light. Various colors can be realized, and efficient white light can be realized by using fluorescent materials or combining colors.Low power consumption, semi-permanent life, fast response speed, safety and environment compared to conventional light sources such as fluorescent and incandescent lamps can be realized. Has the advantage of affinity.

Therefore, a white light emitting device that can replace a fluorescent light bulb or an incandescent bulb that replaces a Cold Cathode Fluorescence Lamp (CCFL) constituting a backlight of a transmission module of an optical communication means and a liquid crystal display (LCD) display device. Applications are expanding to diode lighting devices, automotive headlights and traffic lights.

In the conventional light emitting device, a light emitting structure including a buffer layer, a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer is formed on a substrate made of sapphire or the like, and the first conductive semiconductor layer and the second conductive semiconductor layer are formed. The first electrode and the second electrode are respectively disposed on the top.

The light emitting device emits light having energy determined by an energy band inherent in a material in which an electron injected through a first conductive semiconductor layer and holes injected through a second conductive semiconductor layer meet each other to form an active layer. The light emitted from the active layer may vary depending on the composition of the material forming the active layer, and may be blue light, ultraviolet (UV), deep ultraviolet (Deep UV), or the like.

When supplying current to the first conductive semiconductor layer and the second conductive semiconductor layer of the light emitting device, increasing the contact area between the electrode and each conductive semiconductor layer may increase the amount of current supply. When the first electrode is in contact with the exposed first conductive semiconductor layer by mesa etching, the contact area between the light emitting structure and the first electrode is reduced, which may cause reliability problems. In particular, when the point contact of the first electrode to the first conductivity-type semiconductor layer (point contact), such a reduction in the contact area may be a problem.

Embodiments provide a light emitting device in which electrodes are stably in contact with a conductive semiconductor layer while supplying current to the conductive semiconductor layer in a point contact manner.

Embodiments include a substrate; A light emitting structure disposed on the substrate, the light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer formed between the first conductive semiconductor layer and the second conductive semiconductor layer; And a first electrode and a second electrode disposed on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, wherein the first conductive layer is formed from a surface of the second conductive semiconductor layer in the light emitting structure. A mesa region from which a portion of the semiconductor semiconductor layer is removed is formed, and an island light emitting structure in which the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer are arranged in an island shape is formed in at least one of the mesa regions. Provided is one light emitting device.

The height of the island light emitting structure may be lower than the height of the light emitting structure.

The height of the second conductivity type semiconductor layer in the island light emitting structure may be lower than the height of the second conductivity type semiconductor layer in the light emitting structure.

The first electrode may include a first electrode pad and a first branch electrode, and the first branch electrode may be disposed on side and top surfaces of each island light emitting structure.

The first branch electrode may be continuously disposed on the surface of each island light emitting structure.

The second conductivity-type semiconductor layer in each island light emitting structure may be 5 micrometers to 30 micrometers wide.

The second conductive semiconductor layer in each island light emitting structure may be spaced between 1 micrometer and 10 micrometers from each other.

Each island light emitting structure may be 1 micrometer to 10 micrometers apart from the light emitting structure.

The width of the mesa region may be two to four times the width of each island light emitting structure.

Another embodiment is a substrate; A light emitting structure disposed on the substrate, the light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer formed between the first conductive semiconductor layer and the second conductive semiconductor layer; And a first electrode and a second electrode disposed on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, wherein the first conductive layer is formed from a surface of the second conductive semiconductor layer in the light emitting structure. A mesa region from which a type semiconductor layer has been removed is formed, and at least one island light emitting structure in which the first conductivity type semiconductor layer is disposed in an island shape is provided in the mesa region.

The height of the island light emitting structure may be lower than the height of the first conductivity type semiconductor layer.

The height of the first conductivity type semiconductor layer in the island light emitting structure may be lower than the height of the second conductivity type semiconductor layer in the light emitting structure.

The first electrode may include a first electrode pad and a first branch electrode, and the first branch electrode may be disposed on side and top surfaces of each island light emitting structure.

The first conductivity type semiconductor layer in each island light emitting structure can be 5 micrometers to 30 micrometers wide.

The width of each island light emitting structure may be equal to the spacing between each island light emitting structure.

In the light emitting device according to the present exemplary embodiment, an island type light emitting structure is disposed in a mesa region, and a first electrode is disposed by connecting side and top surfaces of the island type light emitting structure, respectively, to supply a current in a point contact manner, The contact area of the first electrode may increase.

1 is a view showing an embodiment of a light emitting device,
2A is a plan view of the light emitting device of FIG. 1;
FIG. 2B is a view showing the arrangement of the island light emitting structure in the mesa region in FIG. 1;
3 is a view showing another embodiment of a light emitting device;
4A is a plan view of the light emitting device of FIG. 3;
FIG. 4B is a view showing an arrangement of island light emitting structures in the mesa region of FIG. 32;
5A to 5D are views illustrating one embodiment of a manufacturing process of the light emitting device of FIG. 1;
6a to 6d are views illustrating an embodiment of a manufacturing process of the light emitting device of FIG.
7 is a view illustrating an embodiment of a light emitting device package in which a light emitting device is disposed;
8 is a view showing an embodiment of a lighting device in which a light emitting element is disposed;
9 is a diagram illustrating an embodiment of an image display device in which a light emitting device is disposed.

Hereinafter, with reference to the accompanying drawings an embodiment of the present invention that can specifically realize the above object.

In the description of the embodiment according to the present invention, when described as being formed on the "on or under" of each element, the above (on) or below (on) or under) includes both two elements being directly contacted with each other or one or more other elements are formed indirectly between the two elements. In addition, when expressed as “on” or “under”, it may include the meaning of the downward direction as well as the upward direction based on one element.

FIG. 1 is a view showing an embodiment of a light emitting device, FIG. 2A is a plan view of the light emitting device of FIG. 1, and FIG. 2B is a view showing an arrangement of an island light emitting structure in a mesa area in FIG.

In the light emitting device 100, an intermediate layer 115 and a light emitting structure 120 are disposed on a substrate 110.

The substrate 110 may be formed of a material suitable for growing a semiconductor material or a carrier wafer, may be formed of a material having excellent thermal conductivity, and may include a conductive substrate or an insulating substrate. For example, at least one of sapphire (Al 2 O 3 ), SiO 2 , SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, Ga 2 O 3 may be used.

The intermediate layer 115 serves as a buffer to alleviate the difference in lattice mismatch and thermal expansion coefficient of the material between the substrate 110 and the light emitting structure 120 in this embodiment, and in addition to the intermediate layer 115 in the above-described role, It may be another intermediate layer disposed between the 110 and the light emitting structure (120). The material of the intermediate layer 115 may be formed of at least one of a group III-V compound semiconductor, for example, AlAs, GaN, InN, InGaN, AlGaN, InAlGaN, and AlInN.

When the substrate 110 is formed of sapphire or the like, and the light emitting structure 120 including GaN or AlGaN is disposed on the substrate 110, lattice mismatch between GaN or AlGaN and sapphire is very large and these The difference in coefficient of thermal expansion between them is so large that dislocations, melt-backs, cracks, pits, and surface morphology defects may deteriorate crystallinity. Therefore, for example, AlN may be used as the intermediate layer 115.

Although not shown, an undoped GaN layer may be disposed between the intermediate layer 115 and the light emitting structure 120 to prevent the above-described potential from being transferred into the light emitting structure 120. In addition, dislocations are also blocked in the intermediate layer 115 to allow growth of a high quality / high crystalline intermediate layer.

The light emitting structure 120 includes a first conductive semiconductor layer 122, an active layer 124, and a second conductive semiconductor layer 126.

The first conductive semiconductor layer 122 may be formed of a compound semiconductor such as a III-V group or a II-VI group, and may be doped with the first conductive dopant. The first conductive semiconductor layer 122 is a semiconductor material having Al x In y Ga (1-xy) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1), AlGaN. , GaN, InAlGaN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP may be formed of any one or more.

When the first conductivity type semiconductor layer 122 is an n type semiconductor layer, the first conductivity type dopant may include an n type dopant such as Si, Ge, Sn, Se, Te, or the like. The first conductivity type semiconductor layer 122 may be formed as a single layer or a multilayer, but is not limited thereto.

The active layer 124 is disposed between the first conductivity type semiconductor layer 122 and the second conductivity type semiconductor layer 126, and has a single well structure, a multi well structure, a single quantum well structure, and a multi quantum well. A multi-quantum well (MQW) structure, a quantum dot structure or a quantum line structure may be included.

The active layer 124 is formed of a well layer and a barrier layer, for example AlGaN / AlGaN, InGaN / GaN, InGaN / InGaN, AlGaN / GaN, InAlGaN / GaN, GaAs (InGaAs) using a compound semiconductor material of group III-V elements. / AlGaAs, GaP (InGaP) / AlGaP may be formed of any one or more pair structure, but is not limited thereto. The well layer may be formed of a material having an energy band gap smaller than the energy band gap of the barrier layer.

The second conductivity type semiconductor layer 126 may be formed of a semiconductor compound. The second conductive semiconductor layer 126 may be formed of a compound semiconductor such as a group III-V group or a group II-VI, and may be doped with a second conductive dopant. The second conductivity-type semiconductor layer 126 is, for example, a semiconductor material having a compositional formula of In x Al y Ga 1- xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1), AlGaN , GaN AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP may be formed of one or more, for example, when the second conductivity-type semiconductor layer 126 is made of Al x Ga (1-x) N The composition may decrease with distance from the region adjacent to the active layer 124, and the composition of Ga may increase.

When the second conductive semiconductor layer 126 is a p-type semiconductor layer, the second conductive dopant may be a p-type dopant such as Mg, Zn, Ca, Sr, or Ba. The second conductivity-type semiconductor layer 126 may be formed as a single layer or a multilayer, but is not limited thereto.

Although not shown, an electron blocking layer may be disposed between the active layer 124 and the second conductive semiconductor layer 126, and an electron blocking layer having a superlattice structure may be disposed. . The superlattice may be, for example, AlGaN doped with a second conductivity type dopant, and GaN having different compositional ratios of aluminum may be arranged alternately with each other in a layer.

In the case where the substrate 110 is an insulating substrate, a mesa is formed from the surface of the second conductive semiconductor layer 126 to a part of the first conductive semiconductor layer 122 to supply current to the first conductive semiconductor layer 122. A portion of the first conductivity type semiconductor layer 122 may be exposed by etching. In FIG. 1, the above-described region shown on the left side of the light emitting device 100 is called a mesa region.

A portion of the light emitting structure remains in the mesa region. Specifically, the first conductive semiconductor layer 122, the active layer 124, and some of the second conductive semiconductor layer 126 are disposed. Such a light emitting structure, that is, a shape in which the first conductive semiconductor layer 122, the active layer 124, and some of the second conductive semiconductor layer 126 are arranged in an island shape in the mesa region is referred to as an island light emitting structure 126a. Since the active layer 124 does not actually emit light, it may be referred to as a dummy light emitting structure.

In the island light emitting structure 126a indicated by 'A' in FIG. 1, the width decreases in the direction of the first conductivity-type semiconductor layer 122 from the second conductivity-type semiconductor layer 126, but may be substantially the same in width. .

The first electrode 170 and the second electrode 180 are disposed on the first conductive semiconductor layer 122 and the second conductive semiconductor layer 126, respectively, and each may be formed of a conductive material, for example, a metal. In more detail, Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf and may be made of an optional combination thereof, and may be formed in a single layer or a multilayer structure.

In FIG. 1, the height of the island light emitting structure 126a may be lower than the height of the light emitting structure 120. Specifically, the height of the second conductivity-type semiconductor layer 126 in the island light emitting structure 126a may be lower than that of the light emitting structure 120. 2 may be lower than the height of the conductive semiconductor layer 126. In the mesa etching process, a portion of the second conductive semiconductor layer 126 is etched, and then, the peripheral light emitting structure is etched to form the island light emitting structure 126a. Because. Here, the height of the island light emitting structure 126a or the like refers to the height of the upper surface of the structure or layer.

As shown in FIG. 2A, the first electrode 162 includes a first electrode pad 162a and a first branch electrode 162b, and the second electrode 166 includes a second electrode pad 166a and a second electrode. Branch electrode 166b.

The first branch electrode 162b may be linearly disposed in the mesa region, and the second branch electrode 166b may be disposed to surround the first branch electrode 162b on the second conductive semiconductor layer 126.

In FIG. 2A, an island light emitting structure is disposed in a mesa region, in which a second conductivity type semiconductor layer 126 is shown in each island light emitting structure, and although not shown, a second conductivity type semiconductor layer 126 in the island light emitting structure. An active layer 124 and a first conductivity type semiconductor layer 126 may be disposed below the substrate.

1 and 2A, a first electrode 162, in particular a first branch electrode 162b, is disposed covering the side and top surface of each island light emitting structure 126a, in particular the first branch electrode 162b It is arrange | positioned continuously on the surface of the island light emitting structure 126a of. However, as illustrated, the second conductivity type semiconductor layer 126 in each island light emitting structure 126a is not electrically connected to the second branch electrode 166b.

In FIG. 2B, the arrangement of the second conductivity-type semiconductor layer 126 in each island light emitting structure is shown, wherein each second conductivity-type semiconductor layer 126 has a width W 1 of 5 to 30 micrometers. . The formation of the width (W 1) is between 5 microns in the etching process using the mask is difficult, the width (W 1) of the first contact area between the electrode and with different electrodes (162b) shown in Figure 2a is more than 30 micrometers Since the second conductive semiconductor layer 126 shown in FIG. 2B is part of a dummy light emitting structure that is not actually involved in light emission, the area of the dummy light emitting structure may increase, and the driving voltage before the light emitting device may increase. have.

The above-described width W 1 means the length of one side if the cross section of each second conductive semiconductor layer 126 is circular and the diameter is square.

Here, if the second conductivity type semiconductor layer 126 is too narrow, it may not be sufficient for the first branch electrode 162b to be disposed on the side surface and the top surface. If the second conductivity type semiconductor layer 126 is too wide, the second conductivity type semiconductor which is not mesa etched on both sides may be formed. The distance to layer 126 may be too narrow.

In addition, in FIG. 2B, the width d 1 of the mesa region may be two to four times the width w 1 of each island light emitting structure, and the second conductivity-type semiconductor layers 126 in each island light emitting structure may be The distance d 3 spaced apart from each other may be 1 micrometer to 10 micrometers, and the distance d 2 between each island light emitting structure and the unetched light emitting structure may be 1 micrometer to 10 micrometers.

The distance (d 3 ) spaced from each other may be 1 micrometer to 10 micrometers. The distance d 3 of each island light emitting structure is difficult to form within 1 micrometer in an etching process using a mask. When d 3 ) is greater than or equal to 10 micrometers, the distance between island light emitting structures increases, so that the area of the mesa region becomes too large, thereby reducing the light emitting efficiency of the entire light emitting device.

The distance d 2 between each island light emitting structure and the unetched light emitting structure may be between 1 micrometer and 10 micrometers. The above-mentioned distance (d 2 ) is difficult to form within 1 micrometer in the etching process using a mask, and if the above-mentioned distance (d 2 ) is 10 micrometers or more, the area of the mesa area becomes too large, so that the luminous efficiency of the entire light emitting device is increased. Can be reduced.

The light emitting device 100 has an island type light emitting structure in a mesa-etched mesa region, and a first branch electrode is disposed in succession to each island type light emitting structure. Therefore, the first branch electrode is in contact with the first conductivity type semiconductor layer between adjacent island type light emitting structures, and thus the current spreading effect is improved due to an effect such as a point contact, and the first branch electrode is connected to each island. It is disposed in succession to the type of light emitting structure can be improved the reliability of the device due to the increase in the contact area.

FIG. 3 is a view showing an embodiment of a light emitting device, FIG. 4A is a plan view of the light emitting device of FIG. 3, and FIG. 4B is a view showing an arrangement of an island light emitting structure in a mesa region of FIG. 3.

In the light emitting device 200 according to the present embodiment, unlike the light emitting device 100 described above, the island-shaped light emitting structure includes only the first conductive semiconductor layer 222, and the light emitting structure 220 is formed in the other mesa region. All of them are etched to expose the substrate 210 to the intermediate layer 215.

Hereinafter, the differences from the above-described light emitting device 100 will be mainly described.

In the light emitting device 200 according to the present exemplary embodiment, some light emitting structures remain in the mesa region. Specifically, only the first conductive semiconductor layer 222 is disposed. Such a light emitting structure, that is, a shape in which the first conductive semiconductor layer 222 is disposed in an island shape in the mesa region may be referred to as an island light emitting structure 222a.

In the island light emitting structure 222a shown as 'B' in FIG. 3, the width of the first conductivity-type semiconductor layer 222 decreases as it moves upward, that is, away from the substrate 210, but may be substantially the same in width. .

In FIG. 3, the height of the island light emitting structure 222a may be lower than the height of the light emitting structure 220. The height of the first conductivity-type semiconductor layer 222 in the island light emitting structure 222a is the first conductivity in the light emitting structure 220. It may be lower than the height of the type semiconductor layer 222, since the portion of the first conductivity-type semiconductor layer 222 is etched in the mesa etching process to evenly etch the surrounding light emitting structure to form the island light emitting structure 222a. to be. Here, the height of the island light emitting structure 222a or the like refers to the height of the upper surface of the structure or layer.

As shown in FIG. 4A, the first electrode 262 includes a first electrode pad 262a and a first branch electrode 262b, and the second electrode 266 includes a second electrode pad 266a and a second electrode. Branch electrode 266b.

In FIG. 4A, an island light emitting structure is disposed in a mesa region, and a first conductivity type semiconductor layer 222 in each island light emitting structure is illustrated.

3 and 4A, a first electrode 262, in particular a first branch electrode 262b, is disposed covering the side and top surface of each island light emitting structure 222a, in particular the first branch electrode 262b Are continuously arranged on the surface of the island light emitting structure 222a. In the present exemplary embodiment, the first conductive semiconductor layer 222 in each island light emitting structure 222a is in electrical contact with the first branch electrode 262b and has excellent current spreading due to the point contact type. Since the electrode 262b is in continuous contact with the intermediate layer 215 or the substrate 210 and the island light emitting structure 222a, the contact area is increased, thereby improving the reliability of the device and lowering the driving voltage, thereby increasing thermal reliability.

In FIG. 4B, the arrangement of the first conductivity type semiconductor layer 222 in each island light emitting structure is shown. Each first conductivity type semiconductor layer 222 has a width W 2 of 5 to 30 micrometers. . Here, if the width of the first conductivity type semiconductor layer 222 is too wide to be more than 30 micrometers, it may not be sufficient for the effect of point contact, and if it is too narrow to 5 micrometers or less, it may not be sufficient to supply current. have.

In FIG. 4B, the width W 2 of the first conductivity type semiconductor layer 222 in each island light emitting structure and the distance d 4 between the first conductivity type semiconductor layer 222 in each island light emitting structure are different from each other. May be the same. At this time, the first branch electrode 262b is point contacted by a predetermined width w 2 , and each point contact region is spaced apart by the same distance d 4 , so that a regular point contact of the first branch electrode 262b is provided. It may be possible.

5A to 5D are views illustrating an embodiment of a manufacturing process of the light emitting device of FIG. 1.

First, as shown in FIG. 5A, the intermediate layer 115 and the light emitting structure 120 are grown on the substrate 110.

The first conductive semiconductor layer 122 constituting the light emitting structure 120 is n-type using a method such as chemical vapor deposition (CVD) or molecular beam epitaxy (MBE) or sputtering or hydroxide vapor phase epitaxy (HVPE). A dopant-doped AlGaN layer may be formed. In addition, the first conductive semiconductor layer 122 may include a silane containing n-type impurities such as trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and silicon (Si) in the chamber. The gas SiH 4 may be injected and formed.

For example, the active layer 124 may be injected with the trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and trimethyl indium gas (TMIn) to form a multi-quantum well structure. It is not limited to this.

The second conductive semiconductor layer 126 has the same composition as described above, and has a p-type such as trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and magnesium (Mg) in the chamber. Bicetyl cyclopentadienyl magnesium (EtCp 2 Mg) {Mg (C 2 H 5 C 5 H 4 ) 2 } including impurities may be implanted to form a p-type GaN layer, but is not limited thereto.

As shown in FIG. 5B, a portion of the second conductivity-type semiconductor layer 126 is etched and exposed using a mask. In this case, the height of the surface exposed by etching the second conductivity-type semiconductor layer 126 may be the same as the height of the island light emitting structure 126a in FIG. 5C. In this case, a region where the second conductive semiconductor layer 126 is etched may form a mesa region later.

Using a plurality of masks as shown in FIG. 5C, the regions of the second conductivity-type semiconductor layer 126 etched in FIG. 5B are further etched, from the second conductivity-type semiconductor layer 126 to the active layer. 124 and up to a portion of the first conductive semiconductor layer 122 may be exposed to expose a portion of the first conductive semiconductor layer 122.

In FIG. 5C, the island light emitting structure 126a is further formed by etching from the second conductive semiconductor layer 126 to the active layer 124 and a part of the first conductive semiconductor layer 122. Side of the 126a) may be formed to be inclined, but is not limited thereto.

As shown in FIG. 5D, the first electrode 162 is formed to connect each island light emitting structure 126a in the mesa region, and the second electrode 166 is not etched. It can form in the surface of 126.

6A to 6D illustrate an embodiment of a manufacturing process of the light emitting device of FIG. 3.

First, as shown in FIG. 6A, the intermediate layer 215 and the light emitting structure 220 are grown on the substrate 210, and may be the same as the method illustrated in FIG. 5A.

As illustrated in FIG. 6B, a mask is used to etch the second conductive semiconductor layer 226 from the second conductive semiconductor layer 226 to a part of the first conductive semiconductor layer 222 to form a first portion. A portion of the conductive semiconductor layer 222 may be exposed. In this case, a region where the first conductivity type semiconductor layer 222 is etched may form a mesa region later.

As illustrated in FIG. 6C, a plurality of masks may be used to selectively remove the regions of the second conductive semiconductor layer 222 remaining after etching in FIG. 6B to completely remove the regions. In FIG. 6C, a plurality of island light emitting structures 222a are formed in the first conductive semiconductor layer 222 remaining in the additional etching process, but side surfaces of the island light emitting structure 222a may be formed to be inclined.

As shown in FIG. 6D, the first electrode 262 is formed to connect each island light emitting structure 222a in the mesa region, and the second electrode 266 is not etched. It can form on the surface of 226.

7 is a diagram illustrating an embodiment of a light emitting device package in which a light emitting device is disposed.

The light emitting device package 300 according to the embodiment includes a body 310 including a cavity, a first lead frame 321 and a second lead frame 322 installed on the body 310, and the body. The light emitting device 200 according to the above-described embodiments installed in the 310 and electrically connected to the first lead frame 321 and the second lead frame 322, and the molding part 350 formed in the cavity. It includes.

The body 310 may include a silicon material, a synthetic resin material, or a metal material. When the body 310 is made of a conductive material such as a metal material, although not shown, an insulating layer is coated on the surface of the body 310 to prevent an electrical short between the first and second lead frames 321 and 322. Can be.

The first lead frame 321 and the second lead frame 322 are electrically separated from each other, and supplies a current to the light emitting device 200. In addition, the first lead frame 321 and the second lead frame 322 may increase the light efficiency by reflecting the light generated from the light emitting device 200, the heat generated from the light emitting device 200 to the outside It can also be discharged.

The light emitting device 200 may be fixed to the body 310 with a conductive adhesive 300 or installed on the first lead frame 321 or the second lead frame 322. In this embodiment, the first lead frame 321 and the light emitting device 200 are directly energized, and the second lead frame 322 and the light emitting device 200 are connected through a wire 340. The light emitting device 200 may be connected to the lead frames 321 and 322 by a flip chip method or a die bonding method in addition to the wire bonding method.

The light emitting device 200 may be a light emitting device array including three or a plurality of light emitting devices in addition to a single light emitting device as shown, and may be the light emitting devices shown in FIGS. 1 to 4B.

The molding part 350 may surround and protect the light emitting device 200. In addition, the phosphor 360 is conformally coated in a separate layer from the molding part 350 on the molding part 350. In this structure, the phosphor 360 is uniformly distributed, so that the wavelength of the light emitted from the light emitting device 200 may be converted in the entire region of the light emitted from the light emitting device package 300.

The light of the first wavelength region emitted from the light emitting device 200 is excited by the phosphor 360 and converted into the light of the second wavelength region, and the light of the second wavelength region passes through the lens (not shown). The light path can be changed.

In the light emitting device package according to the present embodiment, the light emitting device disposed therein includes each island light emitting structure in the mesa region and has a point contact structure as described above, so that the current spreading is excellent and the reliability of the device is improved. Lower drive voltage also provides excellent thermal reliability.

The light emitting device package may be mounted as one or a plurality of light emitting devices according to the above embodiments, but is not limited thereto.

A plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, may be disposed on an optical path of the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a light unit. Another embodiment may be implemented as a display device, an indicator device, or a lighting system including the semiconductor light emitting device or the light emitting device package described in the above embodiments, and for example, the lighting system may include a lamp or a street lamp. . Hereinafter, a head lamp and a backlight unit will be described as an embodiment of the lighting system in which the above-described light emitting device package is disposed.

8 is a diagram illustrating an embodiment of a head lamp including a light emitting device package.

The head lamp 400 according to the embodiment is a light emitted from the light emitting device module 401 in which the light emitting device package is disposed is reflected in the reflector 402 and the shade 403 and then transmitted through the lens 404 to the front of the vehicle body. Can head.

As described above, the light emitting device used in the light emitting device module 401 has each island light emitting structure in the mesa region and has a point contact structure as described above, so that the current spreading is excellent and the reliability of the device is improved. In addition, the drive voltage is lowered, so the thermal reliability is excellent.

9 is a diagram illustrating an embodiment of an image display device including a light emitting device package.

As shown, the image display device 500 according to the present exemplary embodiment includes a light source module, a reflector 520 on the bottom cover 510, and light disposed in front of the reflector 520 and emitted from the light source module. The light guide plate 540 for guiding the front of the image display device, the first prism sheet 550 and the second prism sheet 560 disposed in front of the light guide plate 540, and the second prism sheet 560. And a color filter 580 disposed in front of the panel 570 disposed in front of the panel 570.

The light source module includes a light emitting device package 535 on the circuit board 530. Here, a circuit board (PCB) may be used as the circuit board 530, and the light emitting device package 535 is as described with reference to FIG. 7.

The bottom cover 510 may accommodate components in the image display apparatus 500. The reflecting plate 520 may be provided as a separate component as shown in the figure, or may be provided in the form of coating with a highly reflective material on the back of the light guide plate 540 or the front of the bottom cover 510.

The reflective plate 520 may use a material having high reflectance and being extremely thin, and may use polyethylene terephthalate (PET).

The light guide plate 540 scatters light emitted from the light emitting device package module so that the light is uniformly distributed over the entire area of the screen of the liquid crystal display. Accordingly, the light guide plate 530 is made of a material having a good refractive index and a high transmittance, and may be formed of polymethyl methacrylate (PMMA), polycarbonate (PC), polyethylene (PE), or the like. In addition, when the light guide plate 540 is omitted, an air guide type image display device may be implemented.

The first prism sheet 550 is formed of a translucent and elastic polymer material on one surface of the support film, and the polymer may have a prism layer in which a plurality of three-dimensional structures are repeatedly formed. Here, the plurality of patterns may be provided in the stripe type and the valley repeatedly as shown.

In the second prism sheet 560, the direction of the floor and the valley of one surface of the support film may be perpendicular to the direction of the floor and the valley of one surface of the support film in the first prism sheet 550. This is to evenly distribute the light transmitted from the light source module and the reflective sheet in all directions of the panel 570.

In the present embodiment, the first prism sheet 550 and the second prism sheet 560 form an optical sheet, and the optical sheet is composed of another combination, for example, a micro lens array or a diffusion sheet and a micro lens array. Or a combination of one prism sheet and a micro lens array.

The liquid crystal display panel (Liquid Crystal Display) may be disposed on the panel 570, and in addition to the liquid crystal display panel 560, another type of display device requiring a light source may be provided.

The panel 570 is a state in which a liquid crystal is located between the glass bodies and the polarizing plates are placed on both glass bodies in order to use polarization of light. Here, the liquid crystal has an intermediate characteristic between the liquid and the solid, and the liquid crystal, which is an organic molecule having fluidity like a liquid, has a state in which the liquid crystal is regularly arranged like a crystal, and uses the property that the molecular arrangement is changed by an external electric field. Display an image.

The liquid crystal display panel used in the display device uses a transistor as an active matrix method as a switch for adjusting a voltage supplied to each pixel.

The front surface of the panel 570 is provided with a color filter 580 transmits the light projected by the panel 570, only the red, green and blue light for each pixel can represent the image.

As described above, the light emitting device disposed in the image display device includes each island light emitting structure in the mesa area and has a point contact structure, so that the current spreading is excellent, the device reliability is improved, and the driving voltage is lowered, thereby providing thermal reliability. great.

Although described above with reference to the embodiments are only examples and are not intended to limit the present invention, those skilled in the art to which the present invention pertains are not exemplified above within the scope not departing from the essential characteristics of the present embodiment. It will be appreciated that many variations and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

100, 200: light emitting element 110, 210: substrate
115, 215: intermediate layer 120, 220: light emitting structure
122, 222: first conductive semiconductor layer 124, 224: active layer
126 and 226: second conductive semiconductor layer 162 and 262: first electrode
162a and 262a: first electrode pad 162b and 262b: first branch electrode
166 and 266: second electrode 166a and 266a: second electrode pad
166b and 266b: second branch electrodes 222a and 126a: an island light emitting structure

Claims (16)

delete delete delete delete delete delete delete delete delete Board;
An intermediate layer on the substrate;
A light emitting structure disposed on the intermediate layer, the light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer formed between the first conductive semiconductor layer and the second conductive semiconductor layer; And
A first electrode and a second electrode disposed on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively;
A mesa region in which the first conductivity type semiconductor layer is partially removed from the surface of the second conductivity type semiconductor layer is formed in the light emitting structure, and the first conductivity type semiconductor layer is formed in an island shape in the mesa region. At least one island light emitting structure is disposed,
The first conductive semiconductor layer is removed below the mesa region to expose the intermediate layer,
The first electrode includes a first electrode pad and a first branch electrode, wherein the first branch electrode is formed on a side surface and an upper surface of each island light emitting structure, and an upper surface of an intermediate layer of a region between the island light emitting structures. And a first direction in which the first branch electrode is disposed in an intersecting manner with the first conductive semiconductor layer in the mesa region. The method of claim 10,
The height of the upper surface of the island light emitting structure is lower than the height of the upper surface of the first conductive semiconductor layer. The method of claim 10,
And a height of an upper surface of the first conductive semiconductor layer in the island light emitting structure is lower than a height of an upper surface of the second conductive semiconductor layer in the light emitting structure. delete delete The method of claim 10,
And a first conductivity type semiconductor layer in each of the island light emitting structures has a width of 5 micrometers to 30 micrometers, and the width of each island light emitting structure is equal to a distance between the respective island light emitting structures. delete
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JP2005158788A (en) * 2003-11-20 2005-06-16 Matsushita Electric Works Ltd Semiconductor light-emitting device

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JP2005158788A (en) * 2003-11-20 2005-06-16 Matsushita Electric Works Ltd Semiconductor light-emitting device

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