KR20130075321A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
KR20130075321A
KR20130075321A KR1020110143646A KR20110143646A KR20130075321A KR 20130075321 A KR20130075321 A KR 20130075321A KR 1020110143646 A KR1020110143646 A KR 1020110143646A KR 20110143646 A KR20110143646 A KR 20110143646A KR 20130075321 A KR20130075321 A KR 20130075321A
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South Korea
Prior art keywords
semiconductor layer
electrode
layer
disposed
light emitting
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KR1020110143646A
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Korean (ko)
Inventor
이선균
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엘지이노텍 주식회사
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Priority to KR1020110143646A priority Critical patent/KR20130075321A/en
Publication of KR20130075321A publication Critical patent/KR20130075321A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Abstract

PURPOSE: A light emitting device is provided to improve color sense by emitting light of different wavelength ranges from two active layers. CONSTITUTION: A first active layer (140) and a second active layer (145) are arranged on the upper and lower sides of a first semiconductor layer (150), respectively. A second semiconductor layer (130) is arranged on the lower side of the first active layer. A third semiconductor layer (135) is arranged on the upper side of the second active layer. A first electrode (185) is electrically connected to the first semiconductor layer. A first electrode pad (170) is in contact with the first electrode on the surface of the third semiconductor layer.

Description

[0001] LIGHT EMITTING DEVICE [0002]

An embodiment relates to a light emitting element.

Light emitting devices such as light emitting diodes or laser diodes using semiconductors of Group 3-5 or 2-6 compound semiconductor materials of semiconductors have various colors such as red, green, blue, and ultraviolet rays due to the development of thin film growth technology and device materials. It is possible to realize efficient white light by using fluorescent materials or combining colors, and it has low power consumption, semi-permanent life, fast response speed, safety and environmental friendliness compared to conventional light sources such as fluorescent and incandescent lamps. Has an advantage.

Therefore, a transmission module of the optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, a white light emitting element capable of replacing a fluorescent lamp or an incandescent lamp Diode lighting, automotive headlights, and traffic lights.

The light emitting device emits light having energy determined by an energy band inherent in a material in which electrons injected through the first conductive semiconductor layer and holes injected through the second conductive semiconductor layer meet each other to form an active layer (light emitting layer). do. In the light emitting device package, the phosphor is excited by the light emitted from the light emitting device to emit light having a longer wavelength region than the light emitted from the active layer.

1 is a view showing a conventional light emitting device.

The light emitting device is inherently a material in which electrons injected through the first conductive semiconductor layer (n-type GaN) and holes injected through the second conductive semiconductor layer (p-type GaN) meet each other to form an active layer (MQW). Emits light with energy determined by its energy band. In the light emitting device package, the phosphor is excited by the light emitted from the light emitting device to emit light having a longer wavelength region than the light emitted from the active layer.

The more electrons and holes bonded in the active layer, the higher the intensity of light emitted from the light emitting device.As the thickness of each conductive semiconductor layer is increased, the electrons and holes move smoothly due to the increase of internal resistance. If not, increasing the cross-sectional area of the conductive semiconductor layer increases the volume of the light emitting device and increases the area of the electrode.

The embodiment attempts to increase the amount of light emitted from the light emitting device.

An embodiment includes a first semiconductor layer of a first conductivity type; First and second active layers disposed under and above the first conductive layer of the first conductivity type, respectively; A second semiconductor layer of a second conductivity type disposed on the first active layer; A third semiconductor layer of the second conductivity type disposed on the second active layer; A first electrode penetrating the second semiconductor layer and the first active layer and electrically connected to the first semiconductor layer; A second electrode electrically connected to the second semiconductor layer; And a third electrode electrically connected to the third semiconductor layer, wherein the first electrode is supplied with a first polarity of a power supply, and the second electrode and the third electrode are supplied with a second polarity of the power source. Provided is a light emitting device.

The light emitting device may further include an insulating layer disposed around the first electrode to electrically block the first electrode from the second semiconductor layer and the first active layer.

The light emitting device may further include a substrate disposed on the second semiconductor layer, and the first electrode may be disposed through the substrate.

The light emitting device may further include an insulating layer disposed around the first electrode to electrically block the first electrode from the third semiconductor layer and the second active layer.

The first electrode may be inserted into the first semiconductor layer deeper than the insulating layer.

The thickness of the first semiconductor layer may be thicker than the thickness of the second semiconductor layer and the third semiconductor layer.

The insulating layer can be 1-10 micrometers in size.

The size of the first electrode may be 40% to 60% of the size of the insulating layer.

A portion of the second semiconductor layer may be exposed by mesa etching, and the second electrode may be disposed on the exposed surface of the second semiconductor layer.

Another embodiment includes a first semiconductor layer of a first conductivity type; First and second active layers disposed under and above the first conductive layer of the first conductivity type, respectively; A second semiconductor layer of a second conductivity type disposed on the first active layer; And a third semiconductor layer of the second conductivity type disposed on the second active layer, wherein a portion of the first semiconductor layer is mesa-etched to expose a portion of the surface and to the exposed surface of the first semiconductor layer. A first electrode is disposed, a portion of the second semiconductor layer is mesa-etched to expose a portion of the surface, and a second electrode is disposed on an exposed surface of the exposed second semiconductor layer, and a surface of the third semiconductor layer Provided is a light emitting device in which a third electrode is disposed.

The exposed surface of the first semiconductor layer and the second semiconductor layer may be mesa-etched side by side, and the first electrode and the second electrode may be disposed to face each other.

The second semiconductor layer may be mesa-etched to expose the surface at one edge of the first semiconductor layer, and the third semiconductor layer may be exposed at the edge of the first semiconductor layer in a direction facing the one direction. have.

The second electrode and the third electrode may be disposed to face each other with the first semiconductor layer interposed therebetween.

The first electrode may be disposed between the second electrode and the third electrode in a dot shape.

The first electrode may be disposed to face the second electrode and be parallel to each other, and the length of the first electrode may be smaller than the length of the second electrode.

The second electrode and the third electrode may each include two branch electrodes orthogonal to each other, and the first electrode may include two branch electrodes orthogonal to the two branch electrodes.

In the light emitting device according to the embodiment, a plurality of active layers are disposed to facilitate recombination of electrons and holes, so that the light efficiency is excellent, and color of the light emitting devices may be improved since the two active layers may emit light in different wavelength regions.

1 is a view showing a conventional light emitting device,
2 is a view schematically showing a configuration of a light emitting device;
3 to 5 are views showing first to third embodiments of light emitting devices;
6 is a cross-sectional view of the first electrode in the second active layer,
7A to 7D are diagrams illustrating embodiments of an electrode pad arrangement of the light emitting device of FIG. 3.
8A to 8E are views illustrating one embodiment of a method of manufacturing a light emitting device;
9a to 9e are views showing another embodiment of the manufacturing method of the light emitting device,
10 is a view showing an embodiment of a lighting device in which a light emitting element is disposed,
11 is a view showing an embodiment of a video display device in which a light emitting device is arranged.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features and advantages of the present invention will be more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG.

In the description of the embodiment according to the present invention, in the case of being described as being formed "on or under" of each element, the upper (upper) or lower (lower) or under are all such that two elements are in direct contact with each other or one or more other elements are indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

2 is a view schematically showing the configuration of a light emitting device.

The light emitting device according to the embodiment includes one n-type semiconductor layer, two p-type semiconductors disposed on the first active layer and the second active layer disposed on both sides of the n-type semiconductor layer, and the first active layer and the second active layer, respectively. Layer. Herein, the arrangement of the n-type semiconductor layer and the p-type semiconductor layer may be changed so that two n-type semiconductor layers and one p-type semiconductor layer may be disposed in the light emitting device.

The light emitting device according to the embodiment includes two active layers to facilitate recombination of electrons and holes, so that the light efficiency is excellent, and the two active layers may emit light of different wavelength ranges. The third active layer and another n-type GaN may be disposed on the p-type GaN on the second active layer. The light emitting device in which the plurality of active layers is disposed requires the arrangement of electrode pads for supplying current to three or more conductive semiconductor layers, which will be described in detail below.

3 is a view showing a first embodiment of a light emitting device.

The light emitting device 100 according to the present exemplary embodiment includes one first conductive semiconductor layer 150, and a first active layer 140 and a second active layer 145 disposed on both side surfaces of the first conductive semiconductor layer 150. ) And two second conductive semiconductor layers 130 and 135 disposed on the first active layer 140 and the second active layer 145, respectively. The first electrode pads 170 are disposed on the first conductive semiconductor layer 150, and the second electrode pads 160 and 165 are disposed on the second conductive semiconductor layers 130 and 135, respectively.

The light emitting structure including the first conductivity type semiconductor layer 150, the second conductivity type semiconductor layers 130 and 135, and the first and second active layers 140 and 145 includes a buffer layer 120 on the substrate 110. Can be placed in between.

The substrate 110 may be formed of a material suitable for growth of a semiconductor material, a carrier wafer. It may be formed of a material having excellent thermal conductivity, and may include a conductive substrate or an insulating substrate. For example, at least one of sapphire (Al 2 O 3 ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, Ga 2 O 3 may be used.

The buffer layer 120 is for alleviating the difference in lattice mismatch and thermal expansion coefficient of the material between the substrate 110 and the conductive semiconductor layer. The material of the buffer layer 120 may be formed of at least one of Group III-V compound semiconductors, for example, GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN.

The first conductivity type semiconductor layer 150 may be formed of a semiconductor compound. It may be implemented as a compound semiconductor, such as Group 3-5, Group 2-6, and the first conductivity type dopant may be doped. When the first conductive semiconductor layer 150 is an n-type semiconductor layer, the first conductive dopant is an n-type dopant and may include Si, Ge, Sn, Se, Te, but is not limited thereto.

The first conductive semiconductor layer 150 includes a semiconductor material having a composition formula of In x Al y Ga (1-xy) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). can do. The first conductive semiconductor layer 150 may be formed of any one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP.

In the first and second active layers 140 and 145, electrons injected through the first conductive semiconductor layer 150 and holes injected through the two second conductive semiconductor layers 130 and 135 meet each other. 2 is a layer that emits light with energy determined by the energy band inherent in the materials constituting the active layers 140 and 145.

The first and second active layers 140 and 145 may have a double junction structure, a single quantum well structure, a multi quantum well structure (MQW), a quantum-wire structure, or a quantum dot. It may be formed of at least one of a (Quantum Dot) structure. For example, the first and second active layers 140 and 145 may be injected with trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and trimethyl indium gas (TMIn). A structure may be formed, but is not limited thereto.

The well layer / barrier layer of the first and second active layers 140 and 145 may be, for example, InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, InAlGaN / InAlGaN, GaAs (InGaAs) / AlGaAs, GaP ( InGaP) / AlGaP may be formed of any one or more pair structure, but is not limited thereto. The well layer may be formed of a material having a lower band gap than the band gap of the barrier layer.

A conductive clad layer (not shown) may be formed on or under the first and second active layers 140 and 145. The conductive cladding layer may be formed of a semiconductor having a bandgap wider than the barrier layer or the bandgap of the first and second active layers 140 and 145. For example, the conductive clad layer may include GaN, AlGaN, InAlGaN, superlattice structure, or the like. In addition, the conductive clad layer may be doped with n-type or p-type.

Second conductive semiconductor layers 130 and 135 are disposed on both side surfaces of the first and second active layers 140 and 145. The second conductive semiconductor layers 130 and 135 may be formed of a semiconductor compound. 3-group-5, group-2-group-6, and the like, and the second conductivity type dopant may be doped. For example, it may include a semiconductor material having a compositional formula of In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y≤1, 0≤x + y≤1). When the second conductive semiconductor layers 130 and 135 are p-type semiconductor layers, the second conductive dopant may include Mg, Zn, Ca, Sr, and Ba as a p-type dopant.

In this embodiment, the first conductive semiconductor layer 150 and the second conductive semiconductor layer 150 and the second conductive semiconductor layer 130 in order to secure a space in which the electrode is to be formed, the first conductive semiconductor layer 150 and the second conductive type A portion of the semiconductor layer 130 is mesa etched and exposed.

The first electrode pad 170 is disposed on the exposed surface of the first conductive semiconductor layer 150, and the second electrode pad 160 is disposed on the exposed surface of the second conductive semiconductor layer 130. The first and second electrode pads 170, 160, and 165 may include a single layer including at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (Au). Or it may be formed in a multilayer structure.

When the n-type semiconductor layer is disposed as the first conductive semiconductor layer 150 or the second conductive semiconductor layers 130 and 135, the thickness may be 500 nanometers to 800 nanometers. The semiconductor layer may have a thickness of 800 to 1200 micrometers when the first conductive semiconductor layer 150 is disposed in FIG. 3, and may be 50 to 500 nanometers when the second conductive semiconductor layer 130 or 135 is disposed. Can be. In the present embodiment, the first conductive semiconductor layer 150 may be an n-type semiconductor layer and may be thicker than the sum of the thicknesses of the two second conductive semiconductor layers 130 and 135.

Since the doping concentration of the p-type semiconductor layer is lower than that of the n-type semiconductor layer, in the present embodiment, two second electrode pads 160 and 165 may be connected in series, and two second conductive semiconductor layers ( When the 130 and 135 are p-type conductive semiconductor layers, the number of electrons and holes injected into the first and second active layers 140 and 145 may be similar.

In the light emitting device 100 according to the present exemplary embodiment, two first and second active layers 140 and 145 are disposed, so that the number of electrons and holes coupled in the first and second active layers 140 and 145 increases, thereby increasing luminous efficacy. This is improved.

4 is a view showing a second embodiment of the light emitting device.

Unlike the light emitting device illustrated in FIG. 3, the light emitting device 100 according to the present exemplary embodiment may expose only one second conductive semiconductor layer 130 by mesa etching, and the first conductive semiconductor layer 150 may be exposed. The first electrode pad is disposed on the surface of the second conductive semiconductor layer 135 without being mesa-etched, and the first electrode 185 is a via hole type. Is being inserted).

That is, the first electrode 185 penetrates through the second conductive semiconductor layer 145 and the second active layer 145 from the surface of the second conductive semiconductor layer 135, and the first conductive semiconductor layer 150. It is arranged to penetrate through part of. The first electrode pad 170 is in contact with the first electrode 185 on the surface of the second conductivity-type semiconductor layer 135.

In order to prevent the via hole type first electrode 185 from being electrically connected to the second active layer 145 or the second conductive semiconductor layer 135, the insulating layer 180 is formed around the first electrode 185. ) Is placed. A portion of the insulating layer 180 may be exposed on the surface of the second conductive semiconductor layer 135 to prevent the first electrode pad 170 and the second conductive semiconductor layer 135 from electrically contacting each other. . The first electrode 185 may be inserted deeper into the first conductive semiconductor layer 150 than the insulating layer 180. The first electrode 185 may be disposed deeper than the insulating layer 180 to be disposed deeper than the insulating layer 180. Electrons or holes may be injected into the first conductive semiconductor layer 150 from the first electrode 185 in contact with the first electrode 185.

5 shows a third embodiment of the light emitting element.

In the light emitting device 100 according to the present exemplary embodiment, the first electrode 185 is disposed in a via hole type. Unlike FIG. 4, the first electrode 185 is formed of a first conductive semiconductor layer (see FIG. 4). 150) It is inserted into the via hole type.

That is, only one second conductive semiconductor layer 130 is mesa-etched and exposed, and the first conductive semiconductor layer 150 is disposed without mesa-etching, and the first electrode pad ( 170 is being deployed.

The first electrode 185 penetrates through the buffer layer 120, the second conductive semiconductor layer 130, and the first active layer 140 from the surface of the substrate 110, and is part of the first conductive semiconductor layer 150. It is arranged to penetrate through. The first electrode pad 170 is in contact with the first electrode 185 on the surface of the substrate 110.

In order to prevent the via hole type first electrode 185 from being electrically connected to the first active layer 140 or the second conductive semiconductor layer 130, the insulating layer 180 is formed around the first electrode 185. ) Is placed. When the substrate 110 is an insulating substrate, the insulating layer 180 may be disposed not to be exposed to the surface of the substrate 110.

The first electrode 185 may be inserted deeper into the first conductive semiconductor layer 150 than the insulating layer 180. The first electrode 185 may be deeper than the insulating layer 180, and thus may be disposed deeper than the insulating layer 180. Electrons or holes may be injected into the first conductive semiconductor layer 150 from the first electrode 185 in contact with the first electrode 185.

4 and 5, one second electrode pad 160 is exposed to the second conductive semiconductor layer 130 exposed by mesa etching, and the other second electrode pad 165 is exposed. Is disposed on the surface of another flat second conductive semiconductor layer 135. In FIG. 4, the first electrode pad 170 may be disposed on the same surface as the second electrode pad 165.

6 is a cross-sectional view of the first electrode in the second active layer 145.

The first electrode 185 may be disposed in the second active layer 145 with the insulating layer 180 interposed therebetween, so that the first electrode 185 and the second active layer 145 may not be electrically energized.

A plurality of first electrodes 185 may be provided to evenly inject electrons or holes into the first conductivity-type semiconductor layer 150. When the width and length of the light emitting structure are each 1 mm, 10 to 20 Can be deployed. The size of the edge of each via hole is the size of the insulating layer 180 and may be 1 to 10 micrometers. The above-described 'size' means a diameter when the via hole is circular, and a length of one side when the via hole is polygonal. The size of the first electrode 185 in the insulating layer 180 may be 40% to 60% of the size of the insulating layer 180.

7A to 7D are diagrams illustrating embodiments of an electrode pad arrangement of the light emitting device of FIG. 3.

In FIG. 7A, a second electrode pad 165 is disposed at an edge of the second conductive semiconductor layer 135, and the first conductive semiconductor layer 150 is opposite to the second electrode pad 165. And the second conductivity-type semiconductor layer 130 are mesa-etched and exposed.

The first conductive semiconductor layer 150 is mesa-etched in a 'b' shape in the opposite direction to the second electrode pad 165, and the first electrode pad 170 is the same as the first conductive semiconductor layer 150. It is arranged in the shape of 'b'.

The second conductive semiconductor layer 130 is mesa-etched in a 'b' shape to be adjacent to an edge of the first conductive semiconductor layer 150 in the same manner as the exposed pattern of the first conductive semiconductor layer 150. The second electrode pad 160 is disposed in a 'b' shape in the same shape as the first electrode pad 170.

Electrons injected from the first electrode pad 170 are shown by dashed-dotted lines, and holes injected from the second electrode pads 160 and 165 are shown by dotted lines. Holes injected from the second electrode pad 165 are spread evenly over the entire surface of the second conductive semiconductor layer 135. Although not shown, electrons emitted from the first electrode pads 170 and holes emitted from the second electrode pads 160, respectively, are formed of the first conductive semiconductor layer 150 and the second conductive semiconductor layer 130, respectively. Spread evenly throughout.

In FIG. 7B, the second electrode pad 165 is disposed on the surface of the second conductive semiconductor layer 135 having a 'b' shape in the same shape as that of the second conductive semiconductor layer 135, and the first conductive layer is formed. The semiconductor layer 150 is mesa-etched and exposed, and the first electrode pad 170 is disposed on the exposed surface of the first conductive semiconductor layer 150.

The second conductive semiconductor layer 130 is mesa-etched in the opposite direction to the second conductive semiconductor layer 135 with the first conductive semiconductor layer 150 interposed therebetween, and the surface of the second conductive semiconductor layer 130 is exposed. The second electrode pad 160 is disposed in the same pattern on the surface of the second conductive semiconductor layer 130 exposed in the shape.

Holes injected from the first electrode pad 170 are evenly spread over the entire surface of the first conductive semiconductor layer 150. Although not shown, holes emitted from the second electrode pad 160 are also spread evenly over the entire surface of the second conductive semiconductor layer 130.

7C and 7D, the exposure pattern of the first conductive semiconductor layer 150 and the second conductive semiconductor layer 130 and 135 is the same as that of the embodiment illustrated in FIG. 7B, but the first electrode The pattern of the pads 170 is different.

In the embodiment illustrated in FIG. 7C, the first electrode pads 170 are disposed in a pattern corresponding to the first electrode pads 160. In the embodiment illustrated in FIG. 7D, the first electrode pads 170 cross each other. cross) type.

7C and 7, holes injected from the first electrode pad 170 are spread evenly over the entire surface of the first conductive semiconductor layer 150, and although not shown, holes emitted from the second electrode pad 160 are illustrated. FIG. 2 is spread evenly over the entire surface of the second conductivity-type semiconductor layer 130.

8A to 8E are views illustrating one embodiment of a method of manufacturing a light emitting device.

First, as shown in FIG. 8A, the buffer layer 120 is grown on the substrate 110. An uneven structure may be formed on the substrate 110, but is not limited thereto. Impurities on the surface may be removed by wet cleaning the substrate 110. The composition of the substrate 110 and the buffer layer 120 is as constant.

As illustrated in FIG. 8B, the second conductive semiconductor layer 130, the first active layer 140, the first conductive semiconductor layer 150, the second active layer 145, and the second conductive semiconductor layer ( 135) to grow a light emitting structure.

The composition of each layer in the light emitting structure is the same as described above, for example, Metal Organic Chemical Vapor Deposition (MOCVD), Chemical Vapor Deposition (CVD), Plasma-Enhanced Plasma-Enhanced (PECVD) Chemical Vapor Deposition), Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), and the like, and the like, but are not limited thereto.

As shown in FIG. 8C, a portion of the first conductivity-type semiconductor layer 150 is exposed to secure a space for forming an electrode pad. The second active layer 145 may be formed from the second conductivity-type semiconductor layer 135. In addition, a portion of the first conductive semiconductor layer 150 is etched to secure the above-described space.

As shown in FIG. 8D, a portion of the first conductive semiconductor layer 150, the first active layer 140, and the second conductive semiconductor layer 130 are etched to form a second conductive semiconductor layer 130. Expose a portion of) to secure a space for forming the electrode pad.

In FIG. 8D, the surface on which the first conductivity-type semiconductor layer 130 is exposed is the same direction as the surface on which the first conductivity-type semiconductor layer 150 is exposed, but the first conductivity-type semiconductor layer in the opposite direction (left side in FIG. 8D). 130 may be exposed.

As shown in FIG. 8E, the first electrode pad 170 and the second electrode pads 160 and 165 may be disposed.

9A to 9E illustrate another embodiment of a method of manufacturing a light emitting device.

The process shown in FIGS. 9A and 9B is the same as that shown in FIGS. 8A and 8B. 9C, the mask 200 is covered on the second conductive semiconductor layer 135, and the first conductive semiconductor is penetrated through the second active layer 145 from the second conductive semiconductor layer 135. Dry or wet etch to a portion of layer 150 to form via holes.

As shown in FIG. 9D, the electrode material is inserted into the above-described via hole to form the first electrode 185. In this case, the insulating layer 180 may be disposed around the first electrode 185 to electrically block the first electrode 185 and the second conductive semiconductor layer 135 or the second active layer 1450. As shown in FIG. 4, it may be formed on the surface of the second conductivity-type semiconductor layer 135. Formation of the electrode material and the insulating layer 180 may proceed by a sputtering method.

In this case, the insulating layer 180 may be coated on the edge of the via hole, and the material of the first electrode 185 may be injected into the coated insulating layer 180. After the coating of the insulating layer 180, the bottom of the insulating layer 180 may be further etched to expose the first conductivity-type semiconductor layer 150.

The above-mentioned via hole may be formed from the direction of the substrate 110. In this case, the substrate 110 made of sapphire or the like may be etched with an etching solution such as sulfuric acid or pulling.

When the first electrode pad 170 and the second electrode pads 160 and 165 are formed, the light emitting device shown in FIG. 9E is completed.

The light emitting device described above may be manufactured as a light emitting device package and disposed on a lighting device or an image display device. In the light emitting device package, the light emitting device may be electrically connected to two lead frames, and a phosphor for converting light of the first wavelength region emitted from the light emitting device into light of the second wavelength region may be disposed.

In the above-described light emitting device, two active layers may be disposed to facilitate recombination of electrons and holes, and color may be improved because two active layers may emit light in different wavelength regions, and when driven at a high current, Although light emission does not occur properly in the active layer of, electrons and holes may continue to recombine and emit light in another active layer. In particular, since there is a limit in increasing the doping concentration of the p-type dopant in the p-type semiconductor layer, the current supplied to the light emitting device may be increased by increasing the amount of holes injected by arranging two p-type semiconductor layers. As a result, efficiency drop, which is a problem of low luminous efficiency, can be improved.

The light emitting device package may be mounted as one or a plurality of light emitting devices according to the embodiments described above, but the present invention is not limited thereto.

A plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, may be disposed on an optical path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member can function as a light unit. Another embodiment may be implemented as a display device, an indicator device, or a lighting system including the semiconductor light emitting device or the light emitting device package described in the above embodiments, and for example, the lighting system may include a lamp or a street lamp. . Hereinafter, a head lamp and a backlight unit will be described as an embodiment of an illumination system in which the above-described light emitting device package is disposed.

10 is a view showing an embodiment of a head lamp including a light emitting device package.

The light emitted from the light emitting device module 401 in which the light emitting device package is disposed is reflected by the reflector 402 and the shade 403 and then transmitted through the lens 404 to the front of the vehicle body You can head.

The light emitting device disposed in the head lamp according to the present exemplary embodiment has a plurality of active layers, and thus, recombination of electrons and holes is performed smoothly, and thus the light efficiency is excellent. Can be.

11 is a diagram illustrating an embodiment of a display device including a light emitting device package.

As shown, the display device 500 according to the present exemplary embodiment includes a light source module, a reflector 520 on the bottom cover 510, and a light disposed in front of the reflector 520 and emitting light emitted from the light source module. In front of the light guide plate 540, the first prism sheet 550 and the second prism sheet 560 disposed in front of the light guide plate 540, and in front of the second prism sheet 560. And a color filter 580 disposed throughout the panel 570.

The light source module comprises a light emitting device package 535 on a circuit board 530. Here, a circuit board (PCB) may be used as the circuit board 530, and the light emitting device package 535 is as described with reference to FIG. 13.

The bottom cover 510 may accommodate components in the display device 500. The reflective plate 520 may be formed as a separate component as shown in the drawing, or may be provided on the rear surface of the light guide plate 540 or on the front surface of the bottom cover 510 with a highly reflective material.

The reflector 520 can be made of a material having a high reflectance and can be used in an ultra-thin shape, and a polyethylene terephthalate (PET) can be used.

The light guide plate 540 scatters the light emitted from the light emitting device package module so that the light is uniformly distributed over the entire screen area of the LCD. Accordingly, the light guide plate 530 is made of a material having a good refractive index and transmittance. The light guide plate 530 may be formed of poly methylmethacrylate (PMMA), polycarbonate (PC), or polyethylene (PE). Also, if the light guide plate 540 is omitted, an air guide display device can be realized.

The first prism sheet 550 is formed on one side of the support film with a translucent and elastic polymer material. The polymer may have a prism layer in which a plurality of steric structures are repeatedly formed. Here, the plurality of patterns may be provided in the stripe type and the valley repeatedly as shown.

In the second prism sheet 560, a direction of a floor and a valley of one side of the supporting film may be perpendicular to a direction of a floor and a valley of one side of the supporting film in the first prism sheet 550. This is for evenly distributing the light transmitted from the light source module and the reflective sheet in all directions of the panel 570.

In this embodiment, the first prism sheet 550 and the second prism sheet 560 constitute an optical sheet, which may be made of other combinations, for example, a microlens array or a combination of a diffusion sheet and a microlens array Or a combination of one prism sheet and a microlens array, or the like.

A liquid crystal display panel may be disposed on the panel 570. In addition to the liquid crystal display panel, another type of display device that requires a light source may be provided.

In the panel 570, a liquid crystal is positioned between glass bodies, and a polarizing plate is placed on both glass bodies to utilize the polarization of light. Here, the liquid crystal has an intermediate property between a liquid and a solid, and liquid crystals, which are organic molecules having fluidity like a liquid, are regularly arranged like crystals. The liquid crystal has a structure in which the molecular arrangement is changed by an external electric field And displays an image.

A liquid crystal display panel used in a display device is an active matrix type, and a transistor is used as a switch for controlling a voltage supplied to each pixel.

A color filter 580 is provided on the front surface of the panel 570 so that only the red, green, and blue light is transmitted through the panel 570 for each pixel.

The light emitting device disposed in the display device according to the present exemplary embodiment has a plurality of active layers, which facilitates recombination of electrons and holes, so that the light efficiency is excellent. Can be.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100 light emitting element 110 substrate
120: buffer layer 130, 135: second conductive semiconductor layer
140 and 145: first and second active layers 150: first conductive semiconductor layer
160 and 165: second electrode pad 170: first electrode pad
180: insulating layer 185: first electrode
400: headlamp
410: light emitting device module 420: reflector
430: Shade 440: Lens
800: display device 810: bottom cover
820: reflector 830: circuit board module
840: Light guide plate 850, 860: First and second prism sheet
870 panel 880 color filter

Claims (16)

A first semiconductor layer of a first conductivity type;
First and second active layers disposed under and above the first conductive layer of the first conductivity type, respectively;
A second semiconductor layer of a second conductivity type disposed under the first active layer;
A third semiconductor layer of the second conductivity type disposed on the second active layer;
A first electrode penetrating the second semiconductor layer and the first active layer and electrically connected to the first semiconductor layer;
A second electrode electrically connected to the second semiconductor layer; And
A third electrode electrically connected to the third semiconductor layer,
The first electrode is supplied with a first polarity of the power supply, and the second electrode and the third electrode is supplied with a second polarity of the power supply. The method according to claim 1,
And an insulating layer disposed around the first electrode to electrically block the first electrode from the second semiconductor layer and the first active layer. The method of claim 2,
And a substrate disposed under the second semiconductor layer, wherein the first electrode is disposed through the substrate. The method according to claim 1,
And an insulating layer disposed around the first electrode and electrically blocking the first electrode from the third semiconductor layer and the second active layer. 5. The method according to any one of claims 2 to 4,
The first electrode is inserted into the first semiconductor layer deeper than the insulating layer. The method according to claim 1,
The thickness of the first semiconductor layer is thicker than the thickness of the second semiconductor layer and the third semiconductor layer. The method according to claim 1,
The insulating layer has a size of 1 to 10 micrometers light emitting device. The method of claim 7, wherein
The first electrode has a size of 40% to 60% of the size of the insulating layer. The method according to claim 1,
A portion of the second semiconductor layer is exposed by being mesa etched, the second electrode is disposed on the surface of the exposed second semiconductor layer. A first semiconductor layer of a first conductivity type;
First and second active layers disposed under and above the first conductive layer of the first conductivity type, respectively;
A second semiconductor layer of a second conductivity type disposed on the first active layer; And
A third semiconductor layer of the second conductivity type disposed on the second active layer,
A portion of the first semiconductor layer is mesa-etched to expose a portion of the surface, and a first electrode is disposed on the exposed surface of the first semiconductor layer, and a portion of the second semiconductor layer is mesa-etched to expose a portion of the surface. And a second electrode on the exposed surface of the exposed second semiconductor layer, and a third electrode on the surface of the third semiconductor layer. The method of claim 10,
The first semiconductor layer and the second semiconductor layer are mesa-etched side by side exposed side by side, the first electrode and the second electrode is disposed lightly facing each other side by side. 12. The method of claim 11,
The second semiconductor layer is mesa-etched to expose the surface at one edge of the first semiconductor layer, and the third semiconductor layer is exposed at the edge of the first semiconductor layer in a direction facing the one direction. Light emitting element. The method of claim 12,
The second electrode and the third electrode are disposed to face each other with the first semiconductor layer therebetween. The method of claim 12,
The first electrode has a dot shape disposed between the second electrode and the third electrode. The method of claim 12,
The first electrode is disposed in parallel with the second electrode, the length of the first electrode is smaller than the length of the second electrode. The method of claim 13,
And the second electrode and the third electrode each include two branch electrodes orthogonal to each other, and the first electrode includes two branch electrodes perpendicular to the two branch electrodes.
KR1020110143646A 2011-12-27 2011-12-27 Light emitting device KR20130075321A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150142229A (en) * 2014-06-11 2015-12-22 엘지이노텍 주식회사 Light emitting device, and lighting system
KR20160113791A (en) * 2015-03-23 2016-10-04 엘지이노텍 주식회사 A light emitting device
CN109768134A (en) * 2019-01-28 2019-05-17 华引芯（武汉）科技有限公司 A kind of luminous high efficiency reversion vertical structure high-voltage chip and preparation method thereof
US11682748B2 (en) 2019-10-22 2023-06-20 Samsung Electronics Co., Ltd. Light-emitting diode and backplane and LED display including the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150142229A (en) * 2014-06-11 2015-12-22 엘지이노텍 주식회사 Light emitting device, and lighting system
KR20160113791A (en) * 2015-03-23 2016-10-04 엘지이노텍 주식회사 A light emitting device
CN109768134A (en) * 2019-01-28 2019-05-17 华引芯（武汉）科技有限公司 A kind of luminous high efficiency reversion vertical structure high-voltage chip and preparation method thereof
US11682748B2 (en) 2019-10-22 2023-06-20 Samsung Electronics Co., Ltd. Light-emitting diode and backplane and LED display including the same

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