KR102016515B1 - Light emittng device and light emitting device including the same - Google Patents

Light emittng device and light emitting device including the same Download PDF

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KR102016515B1
KR102016515B1 KR1020120154272A KR20120154272A KR102016515B1 KR 102016515 B1 KR102016515 B1 KR 102016515B1 KR 1020120154272 A KR1020120154272 A KR 1020120154272A KR 20120154272 A KR20120154272 A KR 20120154272A KR 102016515 B1 KR102016515 B1 KR 102016515B1
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layer
light emitting
semiconductor layer
disposed
intermediate layer
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KR1020120154272A
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Korean (ko)
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KR20140084621A (en
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박해진
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엘지이노텍 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer

Abstract

Embodiments include a substrate; A light emitting structure disposed on the substrate, the light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer formed between the first conductive semiconductor layer and the second conductive semiconductor layer; And an intermediate layer between the light emitting structure and the substrate, and a plurality of air voids disposed between the intermediate layer and the light emitting structure.

Description

LIGHT EMITTNG DEVICE AND LIGHT EMITTING DEVICE INCLUDING THE SAME}

Embodiments relate to a light emitting device and a light emitting device package including the same.

Group 3-5 compound semiconductors, such as GaN and AlGaN, are widely used for optoelectronics and electronic devices due to many advantages, such as having a wide and easy to adjust band gap energy.

In particular, light emitting devices such as a light emitting diode or a laser diode using a group 3-5 or 2-6 compound semiconductor material of a semiconductor are developed using thin film growth technology and device materials such as red, green, blue and ultraviolet light. Various colors can be realized, and efficient white light can be realized by using fluorescent materials or combining colors.Low power consumption, semi-permanent life, fast response speed, safety and environment compared to conventional light sources such as fluorescent and incandescent lamps can be realized. Has the advantage of affinity.

Therefore, a white light emitting device that can replace a fluorescent light bulb or an incandescent bulb that replaces a Cold Cathode Fluorescence Lamp (CCFL) constituting a backlight of a transmission module of an optical communication means and a liquid crystal display (LCD) display device. Applications are expanding to diode lighting devices, automotive headlights and traffic lights.

In the conventional light emitting device, a light emitting structure including a buffer layer, a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer is formed on a substrate made of sapphire or the like, and the first conductive semiconductor layer and the second conductive semiconductor layer are formed. The first electrode and the second electrode are respectively disposed on the top.

The light emitting device emits light having energy determined by an energy band inherent in a material in which an electron injected through a first conductive semiconductor layer and holes injected through a second conductive semiconductor layer meet each other to form an active layer. The light emitted from the active layer may vary depending on the composition of the material forming the active layer, and may be blue light, ultraviolet (UV), deep ultraviolet (Deep UV), or the like.

When the above-described light emitting device, in particular, the horizontal light emitting device is disposed in a flip chip type in a package, light emitted from the active layer may pass through the conductive semiconductor layer, the buffer layer, and the substrate in order to be emitted to the outside. .

At this time, the light passing through the different materials and reflected back toward the active layer may reduce the light extraction efficiency of the light emitting device package, dislocations generated between the different materials is the quality of the light emitting structure in the manufacturing process of the light emitting device. Can be reduced.

The embodiment improves the light efficiency of the light emitting device and prevents the quality of the light emitting device from being degraded due to the potential generated between different materials.

Embodiments include a substrate; A light emitting structure disposed on the substrate, the light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer formed between the first conductive semiconductor layer and the second conductive semiconductor layer; And an intermediate layer between the light emitting structure and the substrate, and a plurality of air voids disposed between the intermediate layer and the light emitting structure.

The light emitting structure and the intermediate layer may be heterogeneous materials, and the active layer may emit any one of ultraviolet rays, near ultraviolet rays, and deep ultraviolet rays.

Air voids may be disposed from the inside of the intermediate layer to the inside of the light emitting structure.

The first conductive semiconductor layer may be an AlGaN layer doped with an n-type dopant, and the air void may be disposed even inside the AlGaN layer.

The intermediate layer may be an AlN layer, the intermediate layer comprising a first AlN layer and a second AlN layer, and the air void may be started from the interior of the second AlN layer.

The first AlN layer and the second AlN layer may be formed by varying growth conditions.

An area having the largest width of the air voids may be disposed at a boundary between the intermediate layer and the light emitting structure, and dislocations may occur from an interface between the intermediate layer and the light emitting structure in the peripheral area of each air void.

The potential may converge in the light emitting structure above the air void.

On top of the air voids, the materials of the first conductivity-type semiconductor layer laterally grown around the air voids may be joined, and the air voids may be random in at least one of size, shape and arrangement.

Another embodiment provides a light emitting device package in which the above-described light emitting device is disposed in a flip chip type.

In the light emitting device according to the present embodiment, the potential is converged by the air voids formed between the dissimilar materials in the growth process to improve the quality, and the air voids disposed between the dissimilar materials in the light emitting device package refract light to be emitted to the outside. The light efficiency can be improved. In addition, air voids may be formed at the interface of the double material to reduce the contact area of the dissimilar material to mitigate strain due to lattice mismatch.

1 is a view showing an embodiment of a light emitting device,
2 is a view showing an embodiment of a light emitting device package,
FIG. 3 is a diagram illustrating light transmission in region 'A' of FIG. 2,
4A to 4E are views illustrating one embodiment of a manufacturing process of the light emitting device of FIG. 1;
5 is a view showing an embodiment of a lighting device in which a light emitting element is disposed;
6 is a diagram illustrating an embodiment of an image display device in which a light emitting device is disposed.

Hereinafter, with reference to the accompanying drawings an embodiment of the present invention that can specifically realize the above object.

In the description of the embodiment according to the present invention, when described as being formed on the "on or under" of each element, the above (on) or below (on) or under) includes both two elements being directly contacted with each other or one or more other elements are formed indirectly between the two elements. In addition, when expressed as “on” or “under”, it may include the meaning of the downward direction as well as the upward direction based on one element.

1 is a view showing an embodiment of a light emitting device.

In the light emitting device 100, an intermediate layer 120 and a light emitting structure 140 are disposed on a substrate 110.

The substrate 110 may be formed of a material suitable for growing a semiconductor material or a carrier wafer, may be formed of a material having excellent thermal conductivity, and may include a conductive substrate or an insulating substrate. For example, at least one of sapphire (Al 2 O 3 ), SiO 2 , SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, Ga 2 O 3 may be used.

The intermediate layer 120 is to alleviate the difference in lattice mismatch and coefficient of thermal expansion of the material between the substrate 110 and the light emitting structure 140 in the present embodiment, and the substrate 110 and the light emitting structure in addition to the above-described intermediate layer. It may be another intermediate layer disposed between the 140. The material of the intermediate layer 120 may be formed of at least one of a group III-V compound semiconductor, for example, AlAs, GaN, InN, InGaN, AlGaN, InAlGaN, and AlInN.

When the substrate 110 is formed of sapphire or the like, and when the light emitting structure 140 including GaN or AlGaN is disposed on the substrate 110, lattice mismatch between GaN or AlGaN and sapphire is very large and these The difference in coefficient of thermal expansion between them is so large that dislocations, melt-backs, cracks, pits, and surface morphology defects may deteriorate crystallinity. Therefore, AlN may be used as the intermediate layer 120.

Although not shown, an undoped GaN layer may be disposed between the intermediate layer 120 and the light emitting structure 140 to prevent the above-described potential from being transferred into the light emitting structure 140. In addition, dislocations are blocked in the intermediate layer 120 to allow growth of a high quality / high crystalline intermediate layer.

A plurality of air voids 130 may be disposed between the intermediate layer 120 and the light emitting structure 140. The air void 130 may be formed from the inside of the intermediate layer 120 to be disposed up to the inside of the light emitting structure 140, in particular, the first conductive semiconductor layer 142, which will be described later.

The light emitting structure 140 includes a first conductive semiconductor layer 142, an active layer 144, and a second conductive semiconductor layer 146.

The first conductive semiconductor layer 142 may be formed of a compound semiconductor such as a III-V group or a II-VI group, and may be doped with the first conductive dopant. The first conductive semiconductor layer 142 is a semiconductor material having Al x In y Ga (1-xy) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1), and AlGaN. , GaN, InAlGaN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP may be formed of any one or more.

When the first conductivity type semiconductor layer 142 is an n type semiconductor layer, the first conductivity type dopant may include an n type dopant such as Si, Ge, Sn, Se, Te, or the like. The first conductivity type semiconductor layer 142 may be formed as a single layer or a multilayer, but is not limited thereto.

When the light emitting device 100 illustrated in FIG. 1 is a near ultraviolet light (NUV), an ultraviolet light (UV), a deep ultraviolet light, or a non-polarization light emitting device, the first conductive semiconductor layer 142 may be one of InAlGaN and AlGaN. At least one, and when the first conductivity-type semiconductor layer 142 is made of AlGaN content of Al may be 50%. When the potential generated in the substrate or the intermediate layer is transferred to the active layer, since the deep ultraviolet light emitting device may not use In in the active layer, defects caused by the potential cannot be buffered, and thus the action of the air void is particularly important. In addition, since deep ultraviolet light is absorbed by GaN in the deep ultraviolet light emitting device, AlGaN may be used as a material of the light emitting structure.

The active layer 144 is disposed between the first conductivity type semiconductor layer 142 and the second conductivity type semiconductor layer 146, and has a single well structure, a multi well structure, a single quantum well structure, and a multi quantum well. A multi-quantum well (MQW) structure, a quantum dot structure or a quantum line structure may be included.

The active layer 144 is formed of a well layer and a barrier layer, for example, AlGaN / AlGaN, InGaN / GaN, InGaN / InGaN, AlGaN / GaN, InAlGaN / GaN, GaAs (InGaAs) using a compound semiconductor material of group III-V elements. It may be formed of any one or more of the structure, / AlGaAs, GaP (InGaP) / AlGaP, but is not limited thereto. The well layer may be formed of a material having an energy band gap smaller than the energy band gap of the barrier layer. In particular, the active layer 144 according to the embodiment may generate light of ultraviolet or deep ultraviolet wavelengths, wherein the active layer 144 may be formed of a multi-quantum well structure, in detail Al x Ga (1-x) The quantum wall layer including N (0 <x <1) and the quantum well layer including Al y Ga (1-y) N (0 <x <y <1) have a multi-quantum well structure having one or more cycles. In this case, the quantum well layer may include a dopant of a second conductivity type described below.

The second conductive semiconductor layer 146 may be formed of a semiconductor compound. The second conductive semiconductor layer 146 may be implemented with compound semiconductors such as group III-V and group II-VI, and may be doped with the second conductive dopant. The second conductivity-type semiconductor layer 146 is, for example, a semiconductor material having a compositional formula of In x Al y Ga 1- xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1), AlGaN , GaN AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP may be formed of one or more, for example, when the second conductivity-type semiconductor layer 146 is made of Al x Ga (1-x) N The composition may decrease with distance from the region adjacent to the active layer 244, and the composition of Ga may increase.

When the second conductive semiconductor layer 146 is a p-type semiconductor layer, the second conductive dopant may be a p-type dopant such as Mg, Zn, Ca, Sr, or Ba. The second conductivity-type semiconductor layer 146 may be formed as a single layer or a multilayer, but is not limited thereto. If the light emitting device 100 is an ultraviolet (UV) light, deep ultraviolet light, or a non-polarization light emitting device, the second conductive semiconductor layer 146 may include at least one of InAlGaN and AlGaN.

Although not shown, an electron blocking layer may be disposed between the active layer 144 and the second conductive semiconductor layer 146, and an electron blocking layer having a superlattice structure may be disposed. . The superlattice may be, for example, AlGaN doped with a second conductivity type dopant, and GaN having different compositional ratios of aluminum may be arranged alternately with each other in a layer.

When the substrate 110 is an insulating substrate, in order to supply a current to the first conductive semiconductor layer 142, mesa-etched from the second conductive semiconductor layer 146 to a part of the first conductive semiconductor layer 142. A portion of the first conductivity type semiconductor layer 142 may be exposed.

The first electrode 170 may be disposed on the exposed first conductive semiconductor layer 142, and the second electrode 180 may be disposed on the second conductive semiconductor layer 146.

In the light emitting device 100 having the above-described structure, a plurality of air voids 130 are arranged in a random size, shape, and arrangement at an interface between the intermediate layer 120 and the light emitting structure 140, and thus the intermediate layer 120 and the light emitting structure ( Dislocations that may occur at the interface of the 140 may converge at the upper portion of the air void 130 to improve the quality of the light emitting structure 140, and light emitted downward from the active layer 144 in FIG. 1 may be caused by the air void. Scattered or refracted by the 130 to reduce the amount of reflection of the light can be reduced to reduce the extraction, which will be described later in FIG.

2 is a view showing an embodiment of a light emitting device package.

In the present embodiment, the light emitting device 100 is disposed in a flip chip type, and may be a blue light emitting diode or a light emitting diode emitting ultraviolet rays or deep ultraviolet rays according to the wavelength region of the emitted light. In addition to the chip type, there may be a horizontal light emitting device or a vertical light emitting device.

In the light emitting device package 200, the first electrode 221 and the second electrode 222 are disposed on the sub-mount 210, and the light emitting device 100 is disposed on the first electrode 221 and the second electrode 222. It is electrically coupled through solders 231 and 232.

When the light emitted from the active layer 142 proceeds to the lower part of FIG. 2, the light emitted from the active layer 142 may be reflected by the first electrode 221 and the second electrode 222 made of copper, silver, aluminum, etc. having excellent first reflectance, and directed upward. . In addition, light emitted from the active layer 142 and traveling upward in FIG. 2 may be refracted at the interface between the dissimilar materials, and in particular, light traveling to the air void 130 may be refracted or scattered without being reflected.

FIG. 3 is a diagram illustrating light transmission in region 'A' of FIG. 2.

The intermediate layer 120 made of AlN or the like and the first conductive semiconductor layer 142 made of AlGaN or the like doped with an n-type dopant are heterogeneous materials, and the air void 130 may be filled with air or vacuum. As shown by the arrow, some of the light traveling from the first conductivity-type semiconductor layer 142 to the intermediate layer 120 may be reflected, but the light traveling to the air void 130 may be refracted at the interface or Scattered to continue.

In FIG. 3, the region having the largest width of the air void 130 is disposed at the boundary between the intermediate layer 120 and the first conductivity-type semiconductor layer 142. The v-pit is formed on the intermediate layer 120 as in a process to be described later. After the structure is formed, the first conductive semiconductor layer 142 converges the above-described v-pit structure, such a structure may be formed.

The shape of the air void 130 may have various shapes in addition to the structure similar to the trapezoid shown in FIG. 3, but the shape of the air void 130 is long in the up and down directions. Therefore, total reflection is hardly generated since the incident angle of light is smaller than the critical angle.

4A to 4E are views illustrating a manufacturing process of the light emitting device of FIG. 1.

First, as shown in FIG. 4A, an intermediate layer including a plurality of layers 120a, 120b, and 120c is formed on the substrate 110. In this case, a v-pit structure is formed in the intermediate layer 120c formed thereon in FIG. 4A. Can be.

That is, when the first intermediate layer 120a or the first AlN layer, the second intermediate layer 120b or the second AlN layer, the third intermediate layer 120c or the third AlN layer from below, the v-pit structure is the top. It may be formed in the third intermediate layer (120c). The intermediate layer may be formed of four or more layers instead of the three-layer structure of FIG. 4A, wherein an intermediate layer disposed below and without a v-pit may be referred to as a first intermediate layer or a first AlN layer, and disposed relatively above. And the intermediate layer on which the v-pit is formed, that is, the uppermost intermediate layer, may be referred to as a second intermediate layer or a second AlN layer.

The v-pit may be formed by differently growing growth conditions of the third intermediate layer 120c from the first intermediate layer 120a or the second intermediate layer 120b. When the intermediate layer is grown to AlN, the first intermediate layer 120a or the second intermediate layer 120b may contain 10 to 100 micromoles / minute of TMAl (Tri-methyl Aluminum) and NH 3 , respectively, at a temperature of 1200 to 1400 degrees Celsius. umol / min) and 50 to 500 micro mol / min can be supplied, and the molar ratio of the Group 5 element to the Group 3 element can be formed by supplying 50 or less.

In addition, the third intermediate layer 120c may supply 10 to 100 micro mol / min and 50 to 500 micro mol / min of TMAl (Tri-methyl Aluminum) and NH 3 at a temperature of 1100 degrees Celsius or less, respectively. The molar ratio of the Group 5 element to the Group 3 element can be formed by supplying 50 or more.

V-pit structure can be formed in the third intermediate layer 120c by supplying a difference in the above process conditions, in particular, the molar ratio of the Group 5 element at a higher temperature than the intermediate layer formed below. The ratio may be one to one and may not include other elements such as gallium or indium.

As shown in FIG. 4B, the first conductive semiconductor layer 142 may be grown on the intermediate layer 120. The first conductive semiconductor layer 142 may be formed of an AlGaN layer doped with an n-type dopant using a chemical vapor deposition method (CVD), molecular beam epitaxy (MBE), or sputtering or hydroxide vapor phase epitaxy (HVPE). Can be formed.

In addition, the first conductive semiconductor layer 142 may include a silane containing n-type impurities such as trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and silicon (Si) in the chamber. The gas SiH 4 may be injected and formed.

At this time, dislocations may occur at the interface between the intermediate layer 120 and the first conductivity-type semiconductor layer 142, particularly around the v-pit, and the v-pit may be formed within the first conductivity-type semiconductor layer 142. The air voids 130 may be formed by converging.

The dotted line g represents the growth direction of AlGaN forming the first conductivity-type semiconductor layer 142. Since AlGaN grows in the horizontal direction in addition to the growth in the vertical direction, the horizontal growth is performed around the air void 130. Lateral grown AlGaN is merging. The potential grown at the interface between the intermediate layer 120 and the first conductivity-type semiconductor layer 142 is illustrated by a dashed-dotted line d. As AlGaN grows laterally and converges, the potential also converges and no longer merges. May not grow.

The air voids 130 may grow in a v-pit structure in the intermediate layer 120 and increase in width, and then converge and gradually decrease in width from an interface with the first conductive semiconductor layer 142. In this case, the first conductive semiconductor layer 142a may be partially grown in the region of the intermediate layer 120 of the air void 130, that is, the v-pit structure.

In addition, unlike the region illustrated by S 1 , in the region illustrated by S 2 , the first conductive semiconductor layer 142 may be grown on a portion of the upper portion of the v-pit structure.

As shown in FIG. 4C, the active layer 144 and the second conductive semiconductor layer 146 are grown on the first conductive semiconductor layer 142.

The active layer 144 may include, for example, the trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and trimethyl indium gas (TMIn) to form a multi-quantum well structure. It is not limited to this.

The second conductive semiconductor layer 146 has the same composition as described above, and has a p-type such as trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and magnesium (Mg) in the chamber. Bicetyl cyclopentadienyl magnesium (EtCp 2 Mg) {Mg (C 2 H 5 C 5 H 4 ) 2 } including impurities may be implanted to form a p-type GaN layer, but is not limited thereto.

As shown in FIG. 4D, a mesa is etched from a side surface of the first conductive string semiconductor layer 146 to a part of the active layer 144 and the first conductive semiconductor layer 142 to form the first conductive semiconductor layer ( A portion of 142 may be exposed.

As illustrated in FIG. 4E, the first electrode 170 and the second electrode 180 may be disposed on the exposed first conductive semiconductor layer 142 and the second conductive semiconductor layer 146, respectively. have. The first electrode 170 and / or the second electrode 180 may be formed of a conductive material, for example, metal, and more specifically, Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, It may be made of Pt, Au, Hf and optional combinations thereof, and may be formed in a single layer or multilayer structure.

The light emitting device package may be mounted as one or a plurality of light emitting devices according to the above embodiments, but is not limited thereto.

A plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, may be disposed on an optical path of the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a light unit. Another embodiment may be implemented as a display device, an indicator device, or a lighting system including the semiconductor light emitting device or the light emitting device package described in the above embodiments, and for example, the lighting system may include a lamp or a street lamp. . Hereinafter, a head lamp and a backlight unit will be described as an embodiment of the lighting system in which the above-described light emitting device package is disposed.

5 is a diagram illustrating an embodiment of a head lamp including a light emitting device package.

The head lamp 400 according to the embodiment is a light emitted from the light emitting device module 401 in which the light emitting device package is disposed is reflected in the reflector 402 and the shade 403 and then transmitted through the lens 404 to the front of the vehicle body. Can head.

As described above, the light emitting device used in the light emitting device module 401 is improved in quality due to convergence of potentials by air voids formed between the different materials in the growth process, and is disposed between the different materials in the light emitting device package. The air void may be refracted to emit light to the outside to improve the light efficiency. In addition, air voids may be formed at the interface of the double material to reduce the contact area of the dissimilar material to mitigate strain due to lattice mismatch.

6 is a diagram illustrating an embodiment of an image display device including a light emitting device package.

As shown, the image display device 500 according to the present exemplary embodiment includes a light source module, a reflector 520 on the bottom cover 510, and light disposed in front of the reflector 520 and emitted from the light source module. The light guide plate 540 for guiding the front of the image display device, the first prism sheet 550 and the second prism sheet 560 disposed in front of the light guide plate 540, and the second prism sheet 560. And a color filter 580 disposed in front of the panel 570 disposed in front of the panel 570.

The light source module includes a light emitting device package 535 on the circuit board 530. Here, a circuit board (PCB) may be used as the circuit board 530, and the light emitting device package 535 is as described with reference to FIG. 9.

The bottom cover 510 may accommodate components in the image display apparatus 500. The reflecting plate 520 may be provided as a separate component as shown in the figure, or may be provided in the form of coating with a highly reflective material on the back of the light guide plate 540 or the front of the bottom cover 510.

The reflective plate 520 may use a material having a high reflectance and being extremely thin, and may use polyethylene terephthalate (PET).

The light guide plate 540 scatters light emitted from the light emitting device package module so that the light is uniformly distributed over the entire area of the screen of the liquid crystal display. Therefore, the light guide plate 530 is made of a material having a good refractive index and a high transmittance, and may be formed of polymethyl methacrylate (PMMA), polycarbonate (PC), polyethylene (PE), or the like. In addition, when the light guide plate 540 is omitted, an air guide type display device may be implemented.

The first prism sheet 550 is formed of a translucent and elastic polymer material on one surface of the support film, and the polymer may have a prism layer in which a plurality of three-dimensional structures are repeatedly formed. Here, the plurality of patterns may be provided in the stripe type and the valley repeatedly as shown.

In the second prism sheet 560, the direction of the floor and the valley of one surface of the support film may be perpendicular to the direction of the floor and the valley of one surface of the support film in the first prism sheet 550. This is to evenly distribute the light transmitted from the light source module and the reflective sheet in all directions of the panel 570.

In the present embodiment, the first prism sheet 550 and the second prism sheet 560 form an optical sheet, and the optical sheet is formed of another combination, for example, a micro lens array or a diffusion sheet and a micro lens array. Or a combination of one prism sheet and a micro lens array.

The liquid crystal display panel (Liquid Crystal Display) may be disposed on the panel 570, and in addition to the liquid crystal display panel 560, another type of display device requiring a light source may be provided.

The panel 570 is a state in which a liquid crystal is located between the glass bodies and the polarizing plates are placed on both glass bodies in order to use polarization of light. Here, the liquid crystal has an intermediate characteristic between the liquid and the solid, and the liquid crystal, which is an organic molecule having fluidity like a liquid, has a state in which the liquid crystal is regularly arranged like a crystal, and uses the property that the molecular arrangement is changed by an external electric field. Display an image.

The liquid crystal display panel used in the display device uses a transistor as an active matrix method as a switch for adjusting a voltage supplied to each pixel.

The front surface of the panel 570 is provided with a color filter 580 transmits the light projected by the panel 570, only the red, green and blue light for each pixel can represent the image.

In the light emitting device disposed in the image display device according to the present embodiment, the potential is converged by the air voids formed between the dissimilar materials in the growth process to improve the quality, and the air voids disposed between the dissimilar materials in the light emitting device package are lighted. By refracting the light emitted to the outside can be improved light efficiency. In addition, air voids may be formed at the interface of the double material to reduce the contact area of the dissimilar material to mitigate strain due to lattice mismatch.

Although the above description has been made based on the embodiments, these are merely examples and are not intended to limit the present invention. Those skilled in the art to which the present invention pertains may not have been exemplified above without departing from the essential characteristics of the present embodiments. It will be appreciated that many variations and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

100: light emitting element 110: substrate
220: intermediate layer 130: air void
140: light emitting structures 142 and 146: first and second conductive semiconductor layers
144: active layer 170, 180: first and second electrodes
200: light emitting device packages 221 and 222: first and second electrodes
231, 232: solder
400: head lamp 410: light emitting device module
402: reflector 403: shade
404: lens 500: display device
510: bottom cover 520: reflector
530: circuit board module 540: light guide plate
550, 560: first and second prism sheet 570: panel
580 color filter

Claims (14)

Board;
Disposed on the substrate, and formed between a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and among ultraviolet, near and deep ultraviolet rays; A light emitting structure comprising an active layer emitting any one; And
An intermediate layer disposed on a portion of the light emitting structure and a portion of the substrate, the intermediate layer comprising the substrate and a dissimilar material;
A plurality of air voids (random) of at least one of the size, shape and arrangement are disposed between the intermediate layer and the light emitting structure,
The intermediate layer and the light emitting structure include Al,
The Al composition of the intermediate layer is higher than the Al composition of the light emitting structure,
End portions of the lower portions of the plurality of air voids are disposed in an intermediate region of the intermediate layer, and end portions of the upper portions of the plurality of air voids are disposed in an intermediate region of the first conductive semiconductor layer.
The light emitting device is a region in which the width of the air void is the maximum, disposed at the boundary between the intermediate layer and the light emitting structure. The method of claim 1,
And an electron blocking layer having a superlattice structure disposed between the active layer and the second conductive semiconductor layer. delete The method of claim 1,
The first conductive semiconductor layer is an AlGaN layer doped with an n-type dopant, and the air void is disposed even inside the AlGaN layer. The method of claim 1,
The intermediate layer is an AlN layer light emitting device. The method of claim 5,
The intermediate layer includes a first AlN layer in contact with an upper surface of the substrate and a second AlN layer in contact with an upper surface of the first AlN layer, wherein the first AlN layer and the second AlN layer are formed under different growth conditions. Wherein the intermediate region of the intermediate layer is the second AlN layer. delete The method of claim 1,
And a dislocation from the interface between the intermediate layer and the light emitting structure in the peripheral region of each air void. The method of claim 8,
And the potential converges in the light emitting structure on the air void. The method of claim 1,
And a material of the first conductivity type semiconductor layer laterally grown around the air voids on the air voids. delete delete delete delete
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JP2010114403A (en) * 2008-11-07 2010-05-20 Samsung Electro-Mechanics Co Ltd Nitride semiconductor device

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