KR20130025856A - Nano rod light emitting device - Google Patents

Abstract

PURPOSE: A nanorod light emitting device is provided to improve heat dissipation by using a reflective metal layer formed on a lighting nanorod. CONSTITUTION: A mask layer includes through holes. A lighting nanorod(140) includes a first doped semiconductor nanocore, an active layer(143), and a second doped semiconductor layer(120). The active layer surrounds the first doped semiconductor nanocore. A passivation layer(150) covers the corner part of the lighting nanorod. A reflective metal layer(160) is electrically connected to the first semiconductor layer and used as a first electrode. A second electrode is electrically connected to the semiconductor nanocore.

Description

Nano rod light emitting device

The present invention relates to a nanorod light emitting device, and more particularly, to a nanorod light emitting device capable of further increasing light output.

A light emitting device (LED) refers to a semiconductor device capable of emitting light of various colors by constituting a light emitting source through a PN junction of a compound semiconductor. Recently, blue LEDs and ultraviolet LEDs implemented using nitrides having excellent physical and chemical properties have emerged, and white or other monochromatic light can be produced using blue or ultraviolet LEDs and fluorescent materials, thereby increasing the application range of light emitting devices. ought.

The basic operating principle of the light emitting device is to combine the electrons and holes injected into the active layer to emit light. However, a large number of crystal defects generally exist in the nitride compound semiconductor crystal, and when electrons and holes combine through the crystal defects, they are emitted as heat energy instead of light energy. Reducing such non-emitting recombination is important for improving the luminous efficiency of the semiconductor light emitting device.

Crystal defects that cause non-luminescence recombination are caused by lattice constant mismatch between the growth substrate and the compound semiconductor, or difference in thermal expansion coefficient. In order to improve this disadvantage, techniques for forming a nanoscale light emitting structure having the shape of nanorods have been studied. Such a structure is known to be able to easily grow large areas on heterogeneous substrates because it is less affected by the lattice constant mismatch with the substrate and the difference in thermal expansion coefficient than the thin film type.

Recently, a nanorod structure in the form of a core / cell has been proposed. The advantage of this structure is that it minimizes the first decision defect. A general planar thin film light emitting device has two types of crystal defects. One is a mismatch potential formed due to lattice mismatch between a quantum well layer composed of InGaN and a quantum barrier layer composed of GaN, in which case the potential exists in parallel in the growth plane. The other is a penetration potential which is formed at the interface between sapphire and gallium nitride to reach the light emitting layer while the light emitting device structure is lengthened in the growth direction during growth. In the nanorod structure, since the GaN layer is also deformable in the horizontal direction, the formation of the lattice mismatch potential can be reduced as compared with the general planar thin film light emitting device. In addition, since the area occupied on the substrate is small, only a part of the penetrating potential is propagated to the active layer, and even if a potential is formed, it is likely to move to and disappear from the near surface. Second, the active layer is formed along the surface of the core in the form of a shell layer, so that the light emitting surface area is increased and the actual current density is reduced to improve the light efficiency.

The present invention provides a nanorod light emitting device capable of increasing light output and having good heat generation in a flip chip structure, and a method of manufacturing the same.

Nanorod light emitting device according to an embodiment of the present invention, the mask layer having a plurality of through holes; A semiconductor nanocore doped with a first type vertically grown through the through hole, an active layer formed to surround the surface of the semiconductor nanocore, and a first semiconductor layer doped with a second type formed to surround the surface of the active layer; Light emitting nanorods comprising; A passivation layer covering a corner of the light emitting nanorods and exposing an upper end thereof; A reflective metal layer formed to cover the exposed first semiconductor layer of the light emitting nanorods and electrically connected to the first semiconductor layer and serving as a first electrode; And a second electrode electrically connected to the semiconductor nanocore.

It may further include a thick film metal layer formed on the reflective metal layer.

The thick metal layer may be formed by plating.

The reflective metal layer may be formed of a material containing Ag.

The reflective metal layer may be formed of any one of Ag, Ag / Ni, and Ag / Pt.

The passivation layer may include a first silicon oxide layer covering a corner portion of the light emitting nanorods; It may include; a second silicon oxide layer formed thereon.

The first silicon oxide layer may be a layer including Al ₂ O ₃ , and the second silicon oxide layer may include SiO ₂ .

And a filling layer formed on the second silicon oxide layer to fill between the light emitting nanorods in a portion surrounded by the passivation layer.

The reflective metal layer may form an uneven structure.

Nanorod light emitting device manufacturing method according to an embodiment of the present invention, forming a mask layer having a plurality of through holes; Vertically growing the semiconductor nanocores doped with the first type through the through-holes, forming an active layer to surround the surface of the semiconductor nanocores, and then doping the first semiconductors with the second type to surround the surface of the active layer. Forming a layer to form luminescent nanorods; Forming a passivation layer covering a corner of the light emitting nanorods and exposing an upper end thereof; Forming a reflective metal layer covering an exposed first semiconductor layer of the light emitting nanorods to serve as a first electrode electrically connected to the first semiconductor layer; And forming a second electrode electrically connected to the semiconductor nanocore.

The method may further include forming a thick metal layer on the reflective metal layer by electroplating.

The forming of the passivation layer may include forming a first silicon oxide layer to cover the light emitting nanorods and the mask layer; And forming a second silicon oxide layer on the first silicon oxide layer; forming a filling layer on the second silicon oxide layer; The filling layer and the first and second silicon oxide layers are etched to expose the upper end of the light emitting nanorods, so that the passivation layer covers a corner portion of the light emitting nanorods and is surrounded by the passivation layer. The method may further include forming a structure in which the filling layer is positioned between the rods.

It has a reflective electrode that can easily realize high light output, and the surface texturing effect can be obtained from the nanostructure itself, which is effective for light extraction. The area where the light emitting nanorods come into contact with the reflective electrode layer serving as an electrode is large, so that the light emitting area is large, current injection is advantageous for a large area, and low resistance can be maintained, thereby lowering the operating voltage. By forming a reflective chip layer on the light emitting nanorods to implement a flip chip structure, heat can be well discharged through the reflective metal layer.

1 shows a schematic configuration of a nanorod light emitting device according to an embodiment of the present invention.
2 to 10 schematically show a method for manufacturing a nanorod light emitting device according to an embodiment of the present invention.

Hereinafter, a nanorod light emitting device and a method of manufacturing the same according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the drawings, like reference numerals refer to like elements, and the size and thickness of each element may be exaggerated for clarity of explanation.

1 shows a schematic configuration of a nanorod light emitting device 100 according to an embodiment of the present invention.

Referring to FIG. 1, the nanorod light emitting device 100 may include light emitting nanorods 140, and the light emitting nanorods 140 may be grown from the first semiconductor layer 120. The light emitting nanorods 140 surround the surfaces of the active layer 143 and the active layer 143 surrounding the surfaces of the semiconductor nanocores 141 and the semiconductor nanocores 141 doped with a first type, for example, n-type, And a first semiconductor layer 147 doped with a second type, for example p-type. A passivation layer 150 may be formed to cover a corner portion of the light emitting nanorod 140 and to expose an upper end thereof, and the first of the light emitting nanorod 140 exposed by the passivation layer 150. The reflective metal layer 160 may be formed to cover the semiconductor layer 147. The thick metal layer 170 may be formed on the reflective metal layer 160.

The substrate 110 may be a growth substrate for semiconductor single crystal growth, and a silicon (Si) substrate, a silicon carbide (SiC) substrate, a sapphire substrate, or the like may be used. In addition, a substrate to be formed on the substrate 110 may be used. A substrate suitable for the growth of the second semiconductor layer 120 may be used, for example, a substrate made of ZnO, GaAs, MgAl 2 O 4, MgO, LiAlO 2, LiGaO 2, GaN, or the like.

The second semiconductor layer 120 may be provided on the substrate 110. The second semiconductor layer 120 is a semiconductor layer doped with a first type, and may be formed of a III-V nitride semiconductor material. For example, AlxGayInzN doped with n-type impurities (0 ≦ x ≦ 1, 0 ≤ y ≤ 1, 0 ≤ z ≤ 1, x + y + z = 1). Si, Ge, Se, Te and the like may be used as the n-type impurity. The second semiconductor layer 120 may include hybrid vapor phase epitaxy (HVPE), molecular beam epitaxy (MBE), metal organic vapor phase epitaxy (MOVPE), and metal organic chemistry. It may be formed by a method such as metal organic chemical vapor deposition (MOCVD).

A mask layer 130 having a plurality of through holes is provided on the second semiconductor layer 120. The mask layer 130 may include silicon oxide or silicon nitride as an insulating material. For example, SiO ₂ , SiN, TiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , TiN, AlN, ZrO ₂ , TiAlN, TiSiN and the like. The mask layer 130 may be formed by forming a film of the insulating material on the second semiconductor layer 120 and etching the desired through hole pattern by a lithography process. The through hole may have, for example, a cross-sectional shape of a circle, an ellipse, a polygon, or the like.

Here, although not shown between the substrate 110 and the second semiconductor layer 120, a buffer layer necessary for epitaxial growth may be further formed as needed, and the second semiconductor layer 120 may be formed in multiple layers. May have The second semiconductor layer 120 may be omitted in some cases.

The semiconductor nanocore 141 may be made of a semiconductor material doped with the same first type as the second semiconductor layer 120. For example, the semiconductor nanocore 141 may be made of n-AlxGayInzN (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1, and x + y + z = 1). The semiconductor nanocore 141 has a form vertically grown from the second semiconductor layer 120 through a through hole formed in the mask layer 130, and has a cross-sectional shape of a circle, an ellipse, or a polygon along the cross-sectional shape of the through hole. do. In FIG. 1, the width of the semiconductor nanocore 141 is shown to be the same as the width of the through hole, which is exemplary and may be formed to be somewhat wider than the width of the through hole.

The active layer 143 may be formed to cover the surface of the semiconductor nanocore 141. The active layer 143 emits light by electron-hole recombination, and is a single quantum well or a multi-quantum well made by periodically changing x, y, and z values in AlxGayInzN to adjust the band gap. (multi quantum well) structure. For example, the quantum well layer and the barrier layer may be paired in the form of InGaN / GaN, InGaN / InGaN, InGaN / AlGaN, or InGaN / InAlGaN to form a quantum well structure, and according to the molar fraction of In in the InGaN layer, the band may be formed. The gap energy can be controlled so that the emission wavelength band can be adjusted. When the mole fraction of In changes by about 1%, the emission wavelength is shifted by about 5 nm.

The first semiconductor layer 147 may be provided to cover the surface of the active layer 143. The first semiconductor layer 147 may be composed of p-AlxGayInzN (x + y + z = 1) (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1, x + y + z = 1). As the p-type impurity, Mg, Zn, Be, or the like may be used.

The passivation layer 150 is to reduce leakage at the corners of the light emitting nanorods 140 and may be formed in a double structure. For example, the passivation layer 150 may be formed as a double structure of the first silicon oxide layer 151 covering the corner portion of the light emitting nanorod 140 and the second silicon oxide layer 153 formed thereon. . For example, the first silicon oxide layer 151 may be formed of a relatively slow Al ₂ O ₃ layer deposited by atomic layer deposition (ALD), or the like, and the second silicon oxide layer 153 may be A relatively high deposition rate SiO ₂ layer deposited by a chemical vapor deposition (CVD) method or the like can be made. In this case, the first silicon oxide layer 151 may have a thickness thinner than that of the second silicon oxide layer 153. The filling layer 155 may be further formed on the second silicon oxide layer 153 to fill the gap between the light emitting nanorods 140 surrounded by the first and second silicon oxide layers 151 and 153. have.

The passivation layer 150 may be formed to cover the top surface of the mask layer 130 between the corner of the light emitting nanorod 140 and the light emitting nanorod 140. In addition, the filling layer 155 may be formed to approximately the height of the passivation layer 150.

The passivation layer 150 and the filling layer 155 may be formed as follows. For example, a passivation layer 150 having a two-layer structure is deposited to cover the entire light emitting nanorod 140 and the mask layer 130, and the spin on glass (SOG) spin coating is applied on the passivation layer 150. The filling layer 155 material is applied. Thereafter, the passivation layer 150 and the filling layer 155 may be etched to expose the upper ends of the light emitting nanorods 140. The etching may use, for example, buffered oxide etchant (BOE).

Here, the corner portion of the light emitting nanorod 140 may mean a portion that meets the top surface of the mask layer 130 of the light emitting nanorod 140 and a region adjacent thereto.

The reflective metal layer 160 may be formed to cover the first semiconductor layer 147 of the light emitting nanorods 140 exposed by the passivation layer 150 and may be electrically connected to the first semiconductor layer 147. The reflective metal layer 160 may be formed over the entire surface to cover the light emitting nanorods 140, the top of the passivation layer 150, and the filling layer 155, and the light emitting nanorods 140 for the filling layer 155. By the protruding structure of the can be formed to an appropriate thickness to achieve the uneven structure. The reflective metal layer 160 serves as a first electrode, for example, a p electrode. The reflective metal layer 160 may be formed of a material containing Ag (silver). For example, the reflective metal layer 160 may be formed by coating a material including any one of Ag, Ag / Ni, and Ag / Pt on the entire surface by a sputtering method or the like.

The thick metal layer 170 may be further formed on the reflective metal layer 160. The thick metal layer 170 may be formed by electroplating. The thick film metal layer 170 may be formed to have a relatively flat surface by forming a relatively thicker thickness than the reflective metal layer 160 and then performing a surface polishing process. Here, the entire upper surface of the nanorod light emitting device may be used as an electrode by the thick film metal layer 170, that is, the electroplating layer. As such, since the thick metal film layer can be easily formed through a plating process after forming the reflective metal layer 160 as the reflective electrode, the thick metal film layer can be used as a support layer. Etc. can be prevented.

Meanwhile, a second electrode 180 may be formed on the second semiconductor layer 120 to apply a voltage for electron and hole injection to the active layer 143. In the state where the second electrode 180 is formed up to the thick film metal layer 170, a pattern is formed on the polished surface of the thick film metal layer 170 by using a photoresist, and the like through the wet and dry etching methods. The metal may be removed by exposing the second semiconductor layer 120 and then forming a second electrode 180, for example, an n electrode on the surface of the second semiconductor layer 120.

According to the nanorod light emitting device as described above, since the light generated in the active layer 143 of the light emitting nanorod 140 is spontaneous emission, the light is directed in all directions without special directivity. Reflection is made at the interface of the light emitting nanorods 140 and the reflective metal layer 160 to be directed downward, and the coupling structure of the light emitting nanorods 140 and the reflective metal layer 160 serves as an optical waveguide, thereby directing the light from the lower surface. This excellent light can come out. In addition, by providing an electrode having a high reflectance such as Ag, that is, a reflective metal layer on the upper surface, the amount of light emitted to the lower surface can be increased, and furthermore, since the reflective metal layer has an uneven structure, light extraction efficiency Can be increased. In addition, since the light emitting nanorod 140 and the reflective metal layer serving as the first electrode have a large area, the light emitting area is wider, and the light efficiency is good. .

On the other hand, in the nanorod light emitting device according to the embodiment of the present invention, since light is substantially emitted toward the substrate 110, the substrate 110 is processed into various forms such as lenses or light through a patterning process, if necessary To improve the extraction efficiency, it can be processed to obtain a texturing effect. The substrate 110 may be removed as necessary after fabrication of the device.

Nanorod light emitting device according to an embodiment of the present invention as described above, for example, can be manufactured through the following process.

2 to 10 schematically show a method for manufacturing a nanorod light emitting device according to an embodiment of the present invention.

Referring to FIG. 2, first, a mask layer 130 including a plurality of through holes is formed on a substrate 110, and the semiconductor nanocores 141 doped with a first type, for example, an n type, are formed through the through holes. ) Grow vertically. The second semiconductor layer 120 may be provided on the substrate 110, and a mask layer 130 may be formed thereon. Hereinafter, the case where the 2nd semiconductor layer 120 is provided in the board | substrate 110 is given.

The substrate 110 may be a growth substrate for semiconductor single crystal growth, and a silicon (Si) substrate, a silicon carbide (SiC) substrate, a sapphire substrate, or the like may be used. In addition, the substrate 110 may be formed on the substrate 110. A substrate suitable for growth of the second semiconductor layer 120 may be used, for example, a substrate made of ZnO, GaAs, MgAl 2 O 4, MgO, LiAlO 2, LiGaO 2, GaN, or the like. The second semiconductor layer 120 is a semiconductor layer doped with a second type, for example, n-type, and may be formed of a III-V nitride semiconductor material. For example, AlxGayInzN doped with n-type impurities (0 ≦ x ≤ 1, 0 ≤ y ≤ 1, 0 ≤ z ≤ 1, x + y + z = 1). Si, Ge, Se, Te and the like may be used as the n-type impurity. The second semiconductor layer 120 may include hybrid vapor phase epitaxy (HVPE), molecular beam epitaxy (MBE), metal organic vapor phase epitaxy (MOVPE), and metal organic chemistry. It may be formed by a method such as metal organic chemical vapor deposition (MOCVD). The mask layer 130 may include silicon oxide or silicon nitride as an insulating material. For example, SiO ₂ , SiN, TiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , TiN, AlN, ZrO ₂ , TiAlN, TiSiN and the like. The mask layer 130 may be formed by forming a film of the insulating material on the second semiconductor layer 120 and etching the desired through hole pattern by a lithography process. The through hole may have, for example, a cross-sectional shape of a circle, an ellipse, a polygon, or the like.

Here, although not shown between the substrate 110 and the second semiconductor layer 120, a buffer layer necessary for epitaxial growth may be further formed as needed, and the second semiconductor layer 120 may be formed in multiple layers. May have The second semiconductor layer 120 may be omitted in some cases.

The semiconductor nanocore 141 may be made of a semiconductor material doped with the same first type as the second semiconductor layer 120. For example, the semiconductor nanocore 141 may be made of n-AlxGayInzN (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1, and x + y + z = 1). The semiconductor nanocores 141 may have a form vertically grown from the second semiconductor layer 120 through the through holes formed in the mask layer 130, and have a cross-sectional shape such as a circle, an ellipse, and a polygon along the cross-sectional shape of the through hole. Will have 2 to 10, the width of the semiconductor nanocore 141 is shown to be the same as the width of the through hole, which is exemplary and may be formed to be somewhat wider than the width of the through hole.

After the semiconductor nanocores 141 are vertically grown as described above, as shown in FIG. 3, the active layer 143 is formed to surround the surface of the semiconductor nanocores 141, and the second type is formed to surround the surface of the active layer 143. The light emitting nanorods 140 are formed in an array by forming the first semiconductor layer 147 doped with the semiconductor layer. The active layer 143 may be formed to cover the surface of the semiconductor nanocore 141, and the first semiconductor layer 147 may be formed to cover the surface of the active layer 143. Accordingly, the active layer 143 and the first semiconductor layer 147 do not exist on the surface of the mask layer 130 between the light emitting nanorods 140, so that the light emitting nanorods in the state where the light emitting nanorods 140 are formed ( The surface of the mask layer 130 between the 140 remains exposed.

The active layer 143 is a layer that emits light by electron-hole recombination, a single quantum well or a multi-quantum well made by periodically changing the x, y, z values in AlxGayInzN to adjust the band spacing. (multi quantum well) structure. For example, the quantum well layer and the barrier layer may be paired in the form of InGaN / GaN, InGaN / InGaN, InGaN / AlGaN, or InGaN / InAlGaN to form a quantum well structure, and according to the molar fraction of In in the InGaN layer, the band may be formed. The gap energy can be controlled so that the emission wavelength band can be adjusted. When the mole fraction of In changes by about 1%, the emission wavelength is shifted by about 5 nm. The first semiconductor layer 147 is composed of p-AlxGayInzN (x + y + z = 1) (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1, x + y + z = 1). As the p-type impurity, Mg, Zn, Be, or the like may be used.

Next, as illustrated in FIGS. 4 to 6, the passivation layer 150 may be formed to cover the corners of the light emitting nanorods 140 and expose the upper ends thereof. To this end, first, the passivation layer 150 may be formed over the entire surface to cover the surface of the light emitting nanorods 140 and the mask layer 130 between the light emitting nanorods 140.

For example, as shown in FIG. 4, the passivation layer 150 forms the first silicon oxide layer 151 so as to cover the light emitting nanorods 140 and the mask layer 130, and the first silicon oxide layer. The second silicon oxide layer 153 may be formed on the 151 to have a double structure. That is, the passivation layer 150 may be deposited in a two-layer structure to cover the entire light emitting nanorod 140 and the mask layer 130.

The first silicon oxide layer 151 may be formed of a relatively slow Al ₂ O ₃ layer deposited by atomic layer deposition (ALD), or the like, and the second silicon oxide layer 153 may be formed by chemical vapor deposition. It can be formed of a relatively high deposition rate SiO ₂ layer deposited by (CVD) method or the like. In this case, the first silicon oxide layer 151 may have a thickness thinner than that of the second silicon oxide layer 153.

Next, as shown in FIG. 5, the second silicon oxide layer 153 is filled on the second silicon oxide layer 153 so as to fill between the light emitting nanorods 140 surrounded by the first and second silicon oxide layers 151 and 153. Layer 155 may be further formed. The filling layer 155 is formed by applying a filling layer material on the passivation layer 150 by spin on glass (SOG) spin coating.

Next, when the filling layer 155 and the passivation layer 150 is etched to expose the upper end of the light emitting nanorod 140, as shown in Figure 6, the upper end of the light emitting nanorod 140 is exposed, the filling layer 155 ) May have a structure located approximately to the top of the passivation layer 150. The etching may use, for example, buffered oxide etchant (BOE). Here, the filling layer 155 may be formed to exist only to a portion lower than the top of the passivation layer 150.

As such, the filling layer 155 and the first and second silicon oxide layers 151 and 153 are etched to expose the upper end portion of the light emitting nanorods 140 to thereby expose the first and second silicon oxide layers 151 and 153. ) Covers the corners of the light emitting nanorods 140, and the second silicon oxide layer 153 is filled between the light emitting nanorods 140 in a portion surrounded by the first and second silicon oxide layers 151 and 153. The filling layer 155 may be formed on the structure.

Next, as shown in FIG. 7, the first semiconductor layer 147 of the exposed light emitting nanorods 140 not surrounded by the passivation layer 150 is covered and electrically connected to the first semiconductor layer 147. The reflective metal layer 160 serving as an electrode may be formed. The reflective metal layer 160 may be formed over the entire surface to cover the light emitting nanorods 140, the top of the passivation layer 150, and the filling layer 155, and the light emitting nanorods 140 for the filling layer 155. According to the protruding structure of the reflective metal layer 160 may be formed to an appropriate thickness to form an uneven structure. The reflective metal layer 160 may be formed of a material containing Ag (silver). For example, the reflective metal layer 160 may be formed by coating a material including any one of Ag, Ag / Ni, and Ag / Pt on the entire surface by a sputtering method or the like.

Next, as shown in FIG. 8, a thick film metal layer 170 may be further formed on the reflective metal layer 160. The thick metal layer 170 may be formed by electroplating. The thick film metal layer 170 may be formed to have a relatively flat surface by forming a relatively thicker thickness than the reflective metal layer 160 and then performing a surface polishing process. Here, the thick film metal layer 170, that is, the electroplating layer allows the entire upper surface of the nanorod light emitting device to be used as an electrode.

Next, as shown in FIG. 9, the upper metal is removed through wet and dry etching methods to expose a portion of the second semiconductor layer 120 corresponding to a position where the second electrode 180 is to be formed.

Next, as shown in FIG. 10, when the second electrode 180, for example, the n electrode is formed on the exposed surface of the second semiconductor layer 120, the second electrode 180 electrically connected to the light emitting nanocore 141 is formed. You can get it.

Thereafter, the final nanorod light emitting device may be implemented through a heat treatment process. In addition, a final nanorod light emitting device chip may be manufactured through a postfab process, that is, a wafer thinning process and a dicing process.

Claims (14)

A mask layer having a plurality of through holes;
A semiconductor nanocore doped with a first type vertically grown through the through hole, an active layer formed to surround the surface of the semiconductor nanocore, and a first semiconductor layer doped with a second type formed to surround the surface of the active layer; Light emitting nanorods comprising;
A passivation layer covering a corner of the light emitting nanorods and exposing an upper end thereof;
A reflective metal layer formed to cover the exposed first semiconductor layer of the light emitting nanorods and electrically connected to the first semiconductor layer and serving as a first electrode;
And a second electrode electrically connected to the semiconductor nanocore. The light emitting device of claim 1, further comprising a thick film metal layer formed on the reflective metal layer. The light emitting device of claim 2, wherein the thick metal layer is formed by plating. The light emitting device of claim 1, wherein the reflective metal layer is formed of a material containing Ag. The light emitting device of claim 4, wherein the reflective metal layer is formed of any one of Ag, Ag / Ni, and Ag / Pt. The semiconductor device of claim 1, wherein the passivation layer comprises: a first silicon oxide layer covering a corner portion of the light emitting nanorods;
And a second silicon oxide layer formed thereon. The light emitting device of claim 6, wherein the first silicon oxide layer is an Al ₂ O ₃ layer, and the second silicon oxide layer is an SiO ₂ layer. 7. The light emitting device of claim 6, further comprising a filling layer formed on the second silicon oxide layer to fill between the light emitting nanorods in a portion surrounded by the passivation layer. The light emitting device according to any one of claims 1 to 8, wherein the reflective metal layer has an uneven structure. Forming a mask layer having a plurality of through holes;
Vertically growing the semiconductor nanocores doped with the first type through the through-holes, forming an active layer to surround the surface of the semiconductor nanocores, and then doping the first semiconductors with the second type to surround the surface of the active layer. Forming a layer to form luminescent nanorods;
Forming a passivation layer covering a corner of the light emitting nanorods and exposing an upper end thereof;
Forming a reflective metal layer covering an exposed first semiconductor layer of the light emitting nanorods to serve as a first electrode electrically connected to the first semiconductor layer;
Forming a second electrode electrically connected to the semiconductor nanocore; The method of claim 10, further comprising forming a thick film metal layer on the reflective metal layer by electroplating. The method of claim 11, wherein the thick metal layer is planarized. The method of claim 10, wherein forming the passivation layer,
Forming a first silicon oxide layer to cover the light emitting nanorods and the mask layer; And
Forming a second silicon oxide layer on the first silicon oxide layer; a light emitting device manufacturing method comprising a. The method of claim 13, further comprising: forming a filling layer on the second silicon oxide layer;
The filling layer and the first and second silicon oxide layers are etched to expose the upper end of the light emitting nanorods, so that the passivation layer covers a corner portion of the light emitting nanorods and is surrounded by the passivation layer. Forming a structure in which the filling layer is located between the rod; Light emitting device manufacturing method further comprising.

Images