KR20140059991A - Light emitting device, light emitting device package and lighting device including the same - Google Patents

Light emitting device, light emitting device package and lighting device including the same Download PDF

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Publication number
KR20140059991A
KR20140059991A KR1020120126540A KR20120126540A KR20140059991A KR 20140059991 A KR20140059991 A KR 20140059991A KR 1020120126540 A KR1020120126540 A KR 1020120126540A KR 20120126540 A KR20120126540 A KR 20120126540A KR 20140059991 A KR20140059991 A KR 20140059991A
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KR
South Korea
Prior art keywords
light emitting
layer
phosphor
light
package
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KR1020120126540A
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Korean (ko)
Inventor
이건교
Original Assignee
엘지이노텍 주식회사
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Priority to KR1020120126540A priority Critical patent/KR20140059991A/en
Publication of KR20140059991A publication Critical patent/KR20140059991A/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating

Abstract

An embodiment of the present invention provides a light emitting device package comprising a light emitting device; a phosphor plate separated from the light emitting device; and an optical layer disposed on one side of the phosphor plate and facing the light emitting device. The optical layer transmits light of a first wavelength region emitted from the light emitting device, and the phosphor plate light of a second wavelength region, the wavelength of which is converted.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device, a light emitting device package,
Embodiments relate to a light emitting device, a light emitting device package, and a lighting device including the same.
GaN, and AlGaN are widely used for optoelectronics and electronic devices due to their advantages such as wide and easy bandgap energy.
Particularly, a light emitting device such as a light emitting diode or a laser diode using a semiconductor material of a 3-5 group or a 2-6 group compound semiconductor has been widely used in various fields such as red, green, blue and ultraviolet rays It can realize various colors, and it can realize efficient white light by using fluorescent material or color combination. It has low power consumption, semi-permanent lifetime, fast response speed, safety, and environment compared to conventional light sources such as fluorescent lamps and incandescent lamps Affinity.
Therefore, a transmission module of the optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, a white light emitting element capable of replacing a fluorescent lamp or an incandescent lamp Diode lighting, automotive headlights, and traffic lights.
1 is a schematic view showing a structure of a conventional light emitting device package.
In the conventional light emitting device package 100, a plurality of light emitting devices 115 are disposed on a substrate 120, and side walls 130 are disposed on the edge of a light emitting device 115. A phosphor plate 150 is disposed on the sidewall 130. The phosphor plate 150 includes the phosphor 160.
1, light (a) in the first wavelength range is emitted from the light emitting device 115 and light (a) in the first wavelength range is excited by the fluorescent substance 160 in the fluorescent plate 150 (B) of the second wavelength region, and part (a ') can be emitted to the outside without colliding with the phosphor 160. At this time, the light b 'in the second wavelength region emitted from the phosphor 160 and traveling to the inner space 140 may be absorbed by the substrate 120 or the light emitting device 115.
There is a problem in that light is absorbed in the inner space 140 defined by the substrate 120, the side wall 130, and the phosphor plate 150, thereby lowering the light efficiency of the light emitting device package.
Embodiments of the present invention aim to improve light efficiency by reducing light absorption in a light emitting device package or the like.
An embodiment includes a light emitting element; A phosphor layer disposed apart from the light emitting element; And an optical layer disposed on one surface of the phosphor layer so as to face the light emitting element, wherein the optical layer transmits light in a first wavelength range emitted from the light emitting element, A light emitting device package that reflects light in a second wavelength range is provided.
Another embodiment includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; A phosphor layer conformally coated on the light emitting structure; And an optical layer disposed between the light emitting structure and the phosphor layer and transmitting light in a first wavelength range emitted from the light emitting structure and reflecting light in a second wavelength range in which the wavelength is changed in the phosphor layer, A light emitting device is provided.
Yet another embodiment provides a light emitting device package comprising: a housing in which a light emitting device package is disposed; A globe disposed at a predetermined distance from the light emitting device package; A phosphor layer disposed on an inner surface of the globe; And an optical element that is disposed on the phosphor layer so as to face the light emitting device package and transmits light in a first wavelength range emitted from the light emitting device package and reflects light in a second wavelength range in which the wavelength is changed in the phosphor layer, Layer is provided.
The optical layer may comprise a material selected from the group consisting of Mg, F, SiO, TiO, and Al.
The phosphor layer / phosphor plate may be plate-shaped.
The phosphor plate includes a phosphor layer on one surface, and may be made of glass or ceramics including an optical layer on the other surface.
The phosphor layer / phosphor plate may include a phosphor in glass or ceramics.
The optical layer may be formed by a vacuum deposition method.
The optical layer may consist of one to nine layers.
In this embodiment, the light of the first wavelength range emitted from the light emitting device or the light emitting device package is excited by the phosphor to be converted into the light of the second wavelength range, and then the optical layer functions as a transflective film, The extraction can be improved.
1 is a view schematically showing a structure of a conventional light emitting device package,
FIG. 2 is a view schematically showing the structure of an embodiment of a light emitting device package,
3A is a view showing an embodiment of a light emitting device package,
3B is a view showing another embodiment of the light emitting device package,
4 is a view showing another embodiment of the light emitting device package,
FIG. 5 is a detailed view of the 'A' region of FIG. 4,
FIG. 6 is a view illustrating an embodiment of the light emitting device of FIG. 4,
7 is a view showing the structure of the optical layer described above,
8A is a view showing an embodiment of a lighting apparatus,
8B is a cross-sectional view taken along the line T-t 'in FIG. 8A,
9 is a diagram showing an embodiment of a video display device.
BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features and advantages of the present invention will be more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG.
In the description of the embodiment according to the present invention, in the case of being described as being formed "on or under" of each element, the upper (upper) or lower (lower) or under are all such that two elements are in direct contact with each other or one or more other elements are indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.
2 is a view schematically showing a structure of an embodiment of a light emitting device package.
The light emitting device package 200 includes an array of light emitting devices 215 disposed on the substrate 220. The light emitting devices 215 may be light emitting diodes or the like and one or more of them may be disposed.
A sidewall 230 may be disposed in the edge region of the substrate 220 to form the inner space 240 of the light emitting device package 200 surrounding the light emitting device 215. A phosphor plate 250 is disposed on the sidewall 230, and the phosphor plate 250 includes the phosphor 260.
The phosphor 260 is excited by the light of the first wavelength range emitted from the light emitting device 215 to emit light of the second wavelength range longer than the first wavelength range. An optical layer 280 is disposed on one side of the phosphor. The optical layer 280 may be disposed facing the light emitting element 215 in the direction of the internal space 240 described above.
The optical layer 280 may function as a semipermeable layer that transmits light in the first wavelength range emitted from the light emitting device 215 and reflects light in the second wavelength range emitted from the phosphor 260. 2, light (a) in the first wavelength range is emitted from the light emitting device 215 and light (a) in the first wavelength range is absorbed by the phosphor 260 in the phosphor plate 250 to excite the phosphor (B) in the second wavelength region by the phosphor, and part (a ') can be emitted to the outside without colliding with the phosphor 260. 1, a part of the light in the second wavelength region emitted from the phosphor 260 proceeds to the inner space 240. In this embodiment, the light in the second wavelength region is reflected by the optical layer 280, The light can not be absorbed by the substrate 220 or the light emitting device 215 because it does not proceed to the space 240.
3A is a view showing an embodiment of a light emitting device package.
The light emitting device package 200 according to the embodiment includes a body 220 including a cavity, a first lead frame 231 and a second lead frame 232 mounted on the body 220, The light emitting device 215 is disposed on the body 220 and is electrically connected to the first lead frame 231 and the second lead frame 232. The light emitting element 215 is disposed on the body 220, A phosphor plate 250 and an optical layer 280 disposed on one surface of the phosphor plate 250 so as to face the light emitting device 215.
The body 215 may be formed of a silicon material, a synthetic resin material, or a metal material. If the body 215 is made of a conductive material such as a metal material, an insulating layer may be coated on the surface of the body 215 to prevent an electrical short between the first and second lead frames 231 and 232 have.
The first lead frame 231 and the second lead frame 232 are electrically separated from each other and supply current to the light emitting element 215. The first lead frame 231 and the second lead frame 232 may reflect the light generated by the light emitting device 215 to increase the light efficiency, It may be discharged.
The light emitting device 200 may be electrically connected to the first lead frame 231 through the conductive adhesive 210 and may be electrically connected to the second lead frame 232 through the wire 217.
The phosphor plate 250 includes a phosphor 260. The phosphor 260 may be a YAG phosphor or a silicate phosphor. The phosphor plate 250 may be formed of silicon resin, epoxy resin, glass, Etc. may include the above-described phosphor 260 and may be arranged in a plate shape.
An optical layer 280 may be disposed on one surface of the phosphor plate 250 in the cavity direction. The optical layer 280 is made of a semipermeable material that can transmit light in the first wavelength range and reflect light in the second wavelength range as described above. For example, the optical layer 280 is composed of Mg, F, Si, Ti, and Al , Or a material selected from the group consisting of MgF 2 , SiO 2 , TiO 2, and Al 2 O 3 .
For example, when the light emitting element 215 emits light in the blue wavelength range and the phosphor 260 absorbs and excites the light in the blue wavelength range, the optical layer 280 described above The light in the blue wavelength range can be transmitted and the light in the yellow wavelength range can be reflected. The optical layer 280 may be a single layer, but may be formed of a plurality of layers, and will be described later in detail with reference to FIG.
In FIG. 3A, the distance d between the light emitting device 215 and the optical layer 280 may be 50 micrometers to 700 micrometers. If the distance d is too small, the wire 217 may not be sufficient to secure the internal space 240 in which the wire 217 is to be disposed. If the distance d is too large, Degradation may occur.
The embodiment shown in FIG. 3B is similar to that of FIG. 3A, but differs in that an optical layer 280 is disposed on the front surface of the phosphor plate 250. 3B, the optical layer 280 is disposed on the front surface of the phosphor plate 250 so that the optical layer 280 is in contact with the body 220 and the phosphor plate 250 is not in contact with the body 220. In the embodiment shown in FIG. 3A, the optical layer 280 is disposed only in a part of the phosphor plate 250, so that the phosphor plate 250 is in direct contact with the body 220.
FIG. 4 is a view showing another embodiment of the light emitting device package, and FIG. 5 is a detailed view of the 'A' region in FIG.
The light emitting device package 200 according to this embodiment is similar to the embodiment shown in FIGS. 3A and 3B, but the arrangement of the phosphor layer 250a and the optical layer 280 is different.
The light emitting device 220 is disposed inside the cavity of the body 220 of the light emitting device package 200 according to the present embodiment and the light emitting device 220 includes the optical layer 280, The layer 250a is disposed with a predetermined thickness in a conformal coating manner.
The structure of one embodiment of the above-described light emitting device will be described with reference to Fig.
The light emitting structure of the light emitting device 215 includes the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer, and the first electrode 215e may be disposed on the surface of the first conductivity type semiconductor layer .
The first conductive semiconductor layer may be formed of a semiconductor compound. Group 3-Group 5, Group 2-Group 6, and the like, and the first conductive type dopant may be doped. When the first conductive semiconductor layer is an n-type semiconductor layer, the first conductive dopant may include Si, Ge, Sn, Se, and Te as an n-type dopant.
The first conductive semiconductor layer may include a semiconductor material having a composition formula of In x Al y Ga (1-xy) N (0? X? 1, 0? Y? 1, 0? X + y? . The first conductive semiconductor layer may be formed of one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP and InP.
The active layer is a layer that emits light having energy determined by the energy band inherent in the material of the active layer by the electrons injected through the first conductive type semiconductor layer and the holes injected through the second conductive type semiconductor layer.
The active layer may be at least one of a double heterojunction structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum-wire structure, or a quantum dot structure . For example, the active layer 264 may be formed of a multiple quantum well structure by injecting trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and trimethyl indium gas (TMIn) But is not limited thereto.
The well layer / barrier layer of the active layer may be formed of any one or more of a pair of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, InAlGaN / InAlGaN, GaAs (InGaAs) / AlGaAs, GaP (InGaP) But the present invention is not limited thereto. The well layer may be formed of a material having a band gap lower than the band gap of the barrier layer.
A conductive clad layer (not shown) may be formed on and / or below the active layer. The conductive clad layer may be formed of a semiconductor having a band gap wider than the barrier layer or the band gap of the active layer. For example, the conductive clad layer may include GaN, AlGaN, InAlGaN, superlattice structure, or the like. Further, the conductive clad layer may be doped with n-type or p-type.
A second conductive type semiconductor layer is disposed under the active layer. The second conductivity type semiconductor layer may be formed of a semiconductor compound. 3-group-5, group-2-group-6, and the like, and the second conductivity type dopant may be doped. For example, it may include a semiconductor material having a composition formula of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1, 0? X + y? When the second conductivity type semiconductor layer is a p-type semiconductor layer, the second conductivity type dopant may include Mg, Zn, Ca, Sr, and Ba as a p-type dopant.
Irregularities may be arranged on the surface of the light emitting structure, and the irregularities may be acyclic or periodic as shown. When the irregularities are periodically arranged, the period may be from 500 nanometers to 1,000 nanometers. If the irregularities are arranged by a method other than PEC (photoelectrochemical etching), the period may be 500 nanometers or less or 1,000 nanometers or more A light extracting effect can be expected.
A first electrode 215e is disposed on the surface of the light emitting structure. The first electrode 215e may be formed as a single layer or a multilayer structure including at least one of aluminum (Al), titanium (Ti), chrome (Cr), nickel (Ni), copper have.
A passivation layer 215f is disposed around the light emitting structure. The passivation layer 215f may be made of an insulating material, and the insulating material may be made of a non-conductive oxide or nitride. As one example, the passivation layer (215f) may be formed of silicon oxide (SiO 2) layer, a nitride oxide layer, an aluminum oxide layer.
The ohmic layer 215d, the reflective layer 215c, the bonding layer 215b, and the conductive supporting substrate 215a shown below the light emitting structure may serve as the second electrode.
The ohmic layer 215d may be about 200 Angstroms thick. The ohmic layer may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide ZnO, ZnO, IrOx, RuOx, NiO, Al2O3, Al2O3, Al2O3, Al2O3, ATO, GZO, IZON, IZO, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, Au, Hf / RuOx / ITO, Ni / IrOx / And it is not limited to such a material.
The reflective layer 215c may be formed of a metal layer containing aluminum (Al), silver (Ag), nickel (Ni), platinum (Pt), rhodium (Rh), or an alloy containing Al, Ag, Pt or Rh . Aluminum, silver, and the like can effectively reflect the light generated in the active layer and greatly improve the light extraction efficiency of the light emitting device.
The metal support 215a may be made of a metal having a high electrical conductivity and can sufficiently dissipate heat generated when the light emitting device operates. Therefore, a metal having high thermal conductivity may be used.
The conductive supporting substrate 215a may be formed of a metal or a semiconductor material. And may be formed of a material having high electrical conductivity and high thermal conductivity. For example, a material selected from the group consisting of molybdenum (Mo), silicon (Si), tungsten (W), copper (Cu) and aluminum (Al) (Cu-W), a carrier wafer (e.g., GaN, Si, Ge, GaAs, ZnO, SiGe, SiC, SiGe, Ga 2 O 3, etc.) And the like.
The conductive support substrate 215a may have a mechanical strength enough to separate into separate chips through a scribing process and a breaking process without causing warping of the entire nitride semiconductor.
The bonding layer 215b couples the reflective layer 215c and the conductive support substrate 215a and may be formed of gold (Au), tin (Sn), indium (In), aluminum (Al), silicon (Si) , Nickel (Ni), and copper (Cu), or an alloy thereof.
The optical layer 280 and the phosphor layer 250a are disposed in direct contact with the illustrated light emitting device 215 and the respective compositions may be the same as those of the embodiment shown in FIG. In the embodiment shown in FIGS. 3A and 3B, the inner space 240 may be filled with air, or may be filled with a transparent resin or the like. However, in the present embodiment, the cavity 220 surrounded by the bottom surface and the side wall of the body 220 The molding part 270 may be formed such that the height of the central part of the molding part 270 is lower than the height of the body 220. [
In the present embodiment, the molding part 270 may protect the light emitting device 215 and the wires 217, and may include silicon resin, epoxy resin, or the like. The light emitting device 215 may be electrically connected to the first lead frame 231 by a conductive adhesive 210 and may be bonded to the second lead frame 232 by a wire 217, A part of the optical layer 280 and the fluorescent layer 250a are opened so that the surface of the light emitting element 215 is exposed and the wire 217 is exposed in the exposed region of the light emitting element 215, Can be contacted.
The light emitting device package 200 according to the present embodiment has a structure in which most outgoing light in the vertical type light emitting device 215 proceeds in the upper direction of the light emitting device 215, The light emitting element package 280 is fixed on the light emitting element 215 by the adhesive layer so that the optical layer 280 acts as a semitransmissive film as described above and light extraction of the light emitting device package 200 can be improved.
Although not shown, the optical layer 280 may be disposed on at least one side of the phosphor layer 250, and the phosphor layer 250a may be disposed on the upper side of the body 220 in a plate type as shown in FIG. 3A. The optical layer 280 may be disposed in direct contact with the light emitting element 215.
7 is a view showing the structure of the optical layer described above.
The optical layer 280 may be made of a material selected from the group consisting of MgF 2 , SiO 2 , TiO 2, and Al 2 O 3 , and may be a single layer or a plurality of layers. In Figure 7, the optical layer 280 consists of nine layers 280a-280j, with the thickness of each layer being between 100 nanometers and 500 nanometers. Each layer (280a ~ 280j) is there the same material repeatedly layer or may be a different material laminate, in both cases the material of each (280a ~ 280j) MgF 2, SiO 2, TiO 2 and Al 2 O 3 ≪ / RTI > and the like. The optical layer 280 may be formed by a vacuum deposition method such as sputtering or evaporation. If the thickness of the optical layer 280 is too small, it may not be sufficient for the above-described semi-transmission function. If the thickness of the optical layer 280 is too large, the optical efficiency of the light emitting device package 200 may be lowered .
A plurality of light emitting devices according to the above-described embodiments can be mounted in the light emitting device package, but the present invention is not limited thereto.
A plurality of light emitting device packages described above are arrayed on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, and the like, which are optical members, may be disposed on the light path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member can function as a light unit. Still another embodiment can be implemented as a display device, a pointing device, a lighting system including the semiconductor semiconductor device or the light emitting device package described in the above embodiments, for example, the lighting system can include a lamp, a streetlight .
FIG. 8A is a view showing an embodiment of the lighting apparatus, and FIG. 8B is a view showing a cross section of T-t 'in FIG. 8A.
The illumination device 300 may include a housing 310 and a light emitting module 330 and a globe 340 disposed in the housing 310. The light emitting module 330 may include a light emitting module 330, The package 200 may include a reflector 335 on which an array may be disposed and disposed below the array of light emitting device packages 200.
The housing 310 may be formed of a material having a good heat dissipation property, for example, a metal material or a resin material. A current may be supplied to the housing 310 through the connection terminal 320.
The light emitting device package 200 may be mounted on a substrate (not shown), which may be a circuit pattern printed on an insulator, such as a printed circuit board (PCB), a metal core Metal core PCB, flexible PCB, ceramic PCB, and the like. In addition, the light emitting device package 200a does not include the structure of the semitransparent optical layer in the above embodiments.
The globes 340 may be arranged in a hemispherical shape to forward the light emitted from the light emitting module 330 forward. The globe 340 may be spaced apart from the light emitting device package 200 or the light emitting module 330 at predetermined intervals and shows a cross section of a portion of the globe 340 in FIG. The phosphor layer 350 and the optical layer 380 can be disposed on the inner side.
The phosphor layer 350 includes the phosphor 360, and the specific structure thereof may be the same as that of the above-described phosphor plate. The optical layer 380 is disposed facing the light emitting device package 200 on the inner surface of the phosphor layer 350, and the specific structure thereof is the same as in the above-described embodiment.
In the illumination device according to the present embodiment, the light of the first wavelength range emitted from the light emitting element passes directly through the optical layer without changing the wavelength, reaches the phosphor layer, and the light of the first wavelength range in the phosphor layer And the light of the second wavelength region is emitted to advance to the outside of the globe. Some of the light in the second wavelength region emitted from the phosphor may proceed inside the globe, but may be reflected by the optical layer and then pass through the phosphor layer to advance outside the globe.
Therefore, the illuminating device according to the present embodiment can prevent the phosphor layer from being disposed in each light emitting device package, and the optical efficiency of the illuminating device can be prevented from being lowered by the action of the optical layer.
9 is a diagram showing an embodiment of a video display device.
As shown in the drawing, the image display apparatus 500 according to the present embodiment includes a light source module, a reflection plate 520 on the bottom cover 510, and a reflection plate 520 disposed in front of the reflection plate 520, A first prism sheet 550 and a second prism sheet 560 disposed in front of the light guide plate 540 and a second prism sheet 560 disposed between the first prism sheet 560 and the second prism sheet 560, A panel 570 disposed in front of the panel 570 and a color filter 580 disposed in the front of the panel 570.
The light source module comprises a light emitting device package 535 on a circuit board 530. Here, the circuit board 530 may be a PCB or the like, and the light emitting device package 535 is the same as that described with reference to FIGS. 3A to 5.
The bottom cover 510 can house the components in the image display apparatus 500. The reflective plate 520 may be formed as a separate component as shown in the drawing, or may be provided on the rear surface of the light guide plate 540 or on the front surface of the bottom cover 510 with a highly reflective material.
The reflector 520 can be made of a material having a high reflectance and can be used in an ultra-thin shape, and a polyethylene terephthalate (PET) can be used.
The light guide plate 540 scatters the light emitted from the light emitting device package module so that the light is uniformly distributed over the entire screen area of the LCD. Accordingly, the light guide plate 530 is made of a material having a good refractive index and transmittance. The light guide plate 530 may be formed of poly methylmethacrylate (PMMA), polycarbonate (PC), or polyethylene (PE). Also, if the light guide plate 540 is omitted, an air guide display device can be realized.
The first prism sheet 550 is formed on one side of the support film with a translucent and elastic polymer material. The polymer may have a prism layer in which a plurality of steric structures are repeatedly formed. As shown in the drawings, the plurality of patterns may be repeatedly provided with a stripe pattern.
In the second prism sheet 560, a direction of a floor and a valley of one side of the supporting film may be perpendicular to a direction of a floor and a valley of one side of the supporting film in the first prism sheet 550. This is for evenly distributing the light transmitted from the light source module and the reflective sheet in all directions of the panel 570.
In this embodiment, the first prism sheet 550 and the second prism sheet 560 constitute an optical sheet, which may be made of other combinations, for example, a microlens array or a combination of a diffusion sheet and a microlens array Or a combination of one prism sheet and a microlens array, or the like.
A liquid crystal display (LCD) panel may be disposed on the panel 570. In addition to the liquid crystal display panel 560, other types of display devices requiring a light source may be provided.
In the panel 570, a liquid crystal is positioned between glass bodies, and a polarizing plate is placed on both glass bodies to utilize the polarization of light. Here, the liquid crystal has an intermediate property between a liquid and a solid, and liquid crystals, which are organic molecules having fluidity like a liquid, are regularly arranged like crystals. The liquid crystal has a structure in which the molecular arrangement is changed by an external electric field And displays an image.
A liquid crystal display panel used in a display device is an active matrix type, and a transistor is used as a switch for controlling a voltage supplied to each pixel.
A color filter 580 is provided on the front surface of the panel 570 so that only the red, green, and blue light is transmitted through the panel 570 for each pixel.
In the video display device according to the present embodiment, the light emitting device package having the above-described configuration is disposed, and the light efficiency can be improved.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
a, a ': light in the first wavelength range b, b': light in the second wavelength range
100, 200: light emitting device package 115, 215:
120, 220: substrate 130, 230: side wall
140, 240: internal space 150, 250: phosphor plate
160, 260: Phosphor 210: Conductive adhesive
217: wires 231, 232: first and second lead frames
270: molding part 280: optical layer
300: lighting device 310: housing
320: connection terminal 330: light emitting module
335, 520: reflector 340: globe
500: Display device 510: Bottom cover
530: circuit board module 540: light guide plate
550, 560: first and second prism sheets 570:
580: Color filter

Claims (17)

  1. A light emitting element;
    A phosphor plate spaced apart from the light emitting element; And
    And an optical layer disposed on one surface of the phosphor plate and facing the light emitting element,
    Wherein the optical layer transmits light in a first wavelength range emitted from the light emitting device and reflects light in a second wavelength range in which the wavelength is changed in the fluorescent plate.
  2. The method according to claim 1,
    Wherein the optical layer comprises a material selected from the group consisting of Mg, F, Si, Ti, and Al.
  3. The method according to claim 1,
    Wherein the phosphor plate includes a phosphor in glass or ceramics.
  4. The method according to claim 1,
    Wherein the phosphor plate comprises a glass or ceramic including a phosphor layer on one surface and an optical layer on the other surface.
  5. The method according to claim 1,
    Wherein the optical layer is formed by a vacuum deposition method.
  6. The method according to claim 1,
    Wherein the optical layer comprises one to nine layers.
  7. A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
    A phosphor layer conformally coated on the light emitting structure; And
    And an optical layer that is disposed between the light emitting structure and the phosphor layer and transmits light in a first wavelength range emitted from the light emitting structure and reflects light in a second wavelength range in which the wavelength is changed in the phosphor layer, Device package.
  8. 8. The method of claim 7,
    Wherein the optical layer comprises a material selected from the group consisting of MgF 2 , SiO 2 , TiO 2 and Al 2 O 3 .
  9. 8. The method of claim 7,
    Wherein the phosphor layer includes a phosphor in glass or ceramics.
  10. 8. The method of claim 7,
    Wherein the optical layer is formed by a vacuum deposition method.
  11. 8. The method of claim 7,
    Wherein the optical layer comprises one to nine layers.
  12. A housing in which a light emitting device package is disposed;
    A globe disposed at a predetermined distance from the light emitting device package;
    A phosphor layer disposed on an inner surface of the globe; And
    An optical layer which is disposed on the phosphor layer and faces the light emitting device package and transmits light of a first wavelength range emitted from the light emitting device package and reflects light of a second wavelength range in which the wavelength is changed in the phosphor layer, ≪ / RTI >
  13. 13. The method of claim 12,
    Lighting apparatus wherein the optical layer comprises a material selected from the group consisting of MgF 2, SiO 2, TiO 2 and Al 2 O 3.
  14. 13. The method of claim 12,
    And the predetermined thickness.
  15. 13. The method of claim 12,
    Wherein the phosphor layer includes a phosphor in glass or ceramic.
  16. 13. The method of claim 12,
    Wherein the optical layer is formed by a vacuum deposition method.
  17. 13. The method of claim 12,
    Wherein the optical layer comprises one to nine layers.
KR1020120126540A 2012-11-09 2012-11-09 Light emitting device, light emitting device package and lighting device including the same KR20140059991A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015182797A1 (en) * 2014-05-27 2015-12-03 주식회사 이아이라이팅 Optical module
WO2017078402A1 (en) * 2015-11-04 2017-05-11 엘지이노텍 주식회사 Optical plate, lighting element, and light source module

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015182797A1 (en) * 2014-05-27 2015-12-03 주식회사 이아이라이팅 Optical module
WO2017078402A1 (en) * 2015-11-04 2017-05-11 엘지이노텍 주식회사 Optical plate, lighting element, and light source module
US20180323352A1 (en) * 2015-11-04 2018-11-08 Lg Innotek Co., Ltd. Optical plate, lighting device, and light source module
US10680143B2 (en) 2015-11-04 2020-06-09 Lg Innotek Co., Ltd. Optical plate, lighting device, and light source module

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