KR20170052210A - Optical plate, lighting device, and lighting module - Google Patents

Abstract

The present invention relates to an optical plate, a lighting element, and a light source module. The lighting element comprises: a body having a recessed part, a plurality of lead frames disposed in a concave part of the body, and a light emitting chip on at least one among the plurality of lead frames; a light emitting element having a molding member in the recessed part; and an optical plate disposed on the light emitting element. The optical plate comprises: a phosphor layer disposed on the recessed part; a support disposed in an outer circumference of the phosphor layer; and a first transparent film disposed below the phosphor layer and the support. The first transparent film of the optical plate is disposed between the molding member and the phosphor layer and is in contact with the molding member.

Description

[0001] OPTICAL PLATE, LIGHTING DEVICE, AND LIGHTING MODULE [0002]

An embodiment relates to an optical plate.

Embodiments relate to an illumination device having an optical plate and a light source module having the same.

BACKGROUND ART Light emitting devices, for example, light emitting diodes (LEDs) are a kind of semiconductor devices that convert electrical energy into light, and have been attracting attention as a next generation light source in place of conventional fluorescent lamps and incandescent lamps.

Since the light emitting diode generates light by using a semiconductor device, the light emitting diode consumes very low power as compared with an incandescent lamp that generates light by heating tungsten or a fluorescent lamp that generates ultraviolet rays generated by high-pressure discharge .

In addition, since the light emitting diode generates light using the potential gap of the semiconductor device, it has a longer lifetime, faster response characteristics, and an environment-friendly characteristic as compared with the conventional light source.

Accordingly, much research has been conducted to replace an existing light source with a light emitting diode. The light emitting diode has been increasingly used as a light source for various lamps used in indoor and outdoor, lighting devices such as a liquid crystal display, have.

The embodiment provides an optical plate for wavelength-converting light incident at a position spaced apart from a light source.

The embodiment can provide, on a light source, an optical plate having a phosphor layer and a transparent film on at least one or both of an incident surface and an emission surface of the phosphor layer.

An embodiment provides an illumination device having an optical plate and a plate cover for supporting the same on a light emitting element.

Embodiments provide an illumination device that blocks light leaking through an area between a light emitting device and an optical plate.

The embodiment provides an illumination device in which the interval between the light emitting chip of the light emitting element and the phosphor layer of the optical plate is optimized.

Embodiments provide an illumination device having an optical plate disposed on at least one light source and a light source module having the same.

The embodiment provides an optical plate for diffusing and wavelength-converting light incident on a light-emitting element and an illumination element having the optical plate.

An embodiment provides a light source module having a light emitting chip and an optical plate for diffusing and wavelength-converting light incident on the light emitting chip, on a circuit board.

An illumination device according to an embodiment includes a body having a concave portion, a plurality of lead frames arranged in a concave portion of the body, a light emitting chip on at least one of the plurality of lead frames, And a light emitting element having a molding member in the concave portion; And an optical plate disposed on the light emitting element, wherein the optical plate includes: a phosphor layer disposed on the concave portion; a support disposed around the phosphor layer; and a support member disposed below the phosphor layer and the support member And a first transparent film of the optical plate is disposed between the molding member and the phosphor layer and is in contact with the molding member.

A light source module according to an embodiment includes a circuit board; And a lighting element on the circuit board.

A light source module according to an embodiment includes a circuit board; And a light emitting chip disposed on the circuit board; A reflective member disposed around the light emitting chip; And an optical plate disposed on the light emitting chip and supported by the reflecting member, wherein the optical plate includes a phosphor layer disposed on the light emitting chip, a support disposed around the outer periphery of the phosphor layer, the phosphor layer, A first transparent film disposed under the support; And a second transparent film disposed on the phosphor layer and the support.

Embodiments can increase the lifetime of the phosphor in the optical plate by allowing the optical plate to be spaced from the light emitting chip.

The embodiment can wavelength-convert and diffuse the light incident by the optical plate spaced from the light emitting chip.

The embodiment can cut out light leaking through a region between the light emitting device and the optical plate, thereby improving the extraction efficiency of light emitted through the optical plate.

In the embodiment, by arranging the optical plate so as to be spaced apart from the light source in the concave portion of the light emitting element, the illumination element such as white can be downsized.

Embodiments can prevent a hot spot by disposing a semi-transmissive mirror in a region where a light amount incident from the light emitting chip is large in a region of the optical plate.

Embodiments can improve the reliability of the light emitting device and the lighting device having the same.

The embodiment can improve the reliability of the light source module in which the lighting elements are arranged and the lighting device having the same.

1 is a perspective view of a lighting device according to a first embodiment.
2 is a plan view showing an example of a light emitting device of the illumination device of FIG.
3 is a side cross-sectional view of the light emitting device of Fig.
4 is another cross-sectional side view of the light emitting device of Fig.
Fig. 5 is an exploded perspective view of the optical plate of the illumination device of Fig. 1;
Fig. 6 is a bottom view of the optical plate of the illumination device of Fig. 1;
7 is a side cross-sectional view of the optical plate of Fig.
8 is another cross-sectional view of the optical plate of Fig.
Figs. 9 and 10 are a plan view and a bottom view of the support in the optical plate. Fig.
11 is an example in which a transparent film is attached to the support of the optical plate of Figs. 9 and 10. Fig.
12 is an assembled perspective view of the illumination device of Fig.
13 is a cross-sectional view of the illumination device of Fig. 12 on the AA side.
14 is a view for explaining the illumination element of Fig.
Fig. 15 is a sectional view of the illumination device of Fig. 12 on the BB side.
16 is a modification of the optical plate in the illumination device according to the embodiment.
17 is a modification of the optical plate in the illumination device according to the embodiment.
18 is a view showing an illumination device according to the second embodiment.
19 is another cross-sectional view of the illumination device of Fig.
20 is an example of an illumination device in which a transflective mirror is disposed on a light emitting device according to the embodiment.
21 is another example of an illumination device in which a transflective mirror is disposed on the light emitting device according to the embodiment.
22 is an exploded perspective view showing a lighting device having a plate cover according to the third embodiment.
23 is a plan view showing the optical and plate covers in the illuminating element of Fig.
Fig. 24 is an engaging side sectional view of the optical and plate cover of Fig. 23;
25 is another cross-sectional view of the optical and plate cover of Fig.
26 is an assembled cross-sectional view of the illumination device of Fig.
Fig. 27 is another cross-sectional view of the illumination device of Fig. 23. Fig.
Fig. 28 is an example in which a plate cover is coupled to the illumination device of Fig. 17;
Fig. 29 is an example in which a plate cover is applied to the illumination device of Fig. 18;
30 is another cross-sectional side view of the illumination device of FIG. 29;
31 is a side cross-sectional view of a lighting device having a plate cover according to the fourth embodiment.
32 is a side cross-sectional view of a lighting device having a plate cover according to the fifth embodiment.
33 to 36 are views showing a top view for explaining the arrangement form and the size of the light emitting chip of the light emitting device arranged under the optical plate according to the embodiment.
37 shows a case where three or more light emitting chips are arranged in the light emitting device according to the embodiment.
Fig. 38 is a perspective view showing a light source module in which the illumination device of Fig. 12 is disposed on a circuit board. Fig.
Fig. 39 is a perspective view showing a light source module in which the illumination elements of Fig. 12 are arranged on a circuit board. Fig.
40 to 42 show an example in which a light emitting chip and an optical plate are arranged on a circuit board as a sixth embodiment.
43 is an example of a light emitting chip of a light emitting device according to the embodiment.
44 is another example of the light emitting chip of the light emitting device according to the embodiment.
44 is a perspective view showing a display device having an illumination device according to an embodiment.
45 is a perspective view showing a display device having an illumination device according to an embodiment.
46 is an exploded perspective view showing a lighting device having a lighting device according to the embodiment.

In the description of the embodiments, each substrate, frame, sheet, layer or pattern is formed "on" or "under" each substrate, frame, sheet, Quot; on "and" under "include both being formed" directly "or" indirectly " . In addition, the upper or lower reference of each component is described with reference to the drawings.

Hereinafter, an illumination device according to an embodiment will be described with reference to the accompanying drawings.

FIG. 1 is a perspective view of a lighting device according to a first embodiment, FIG. 2 is a plan view showing an example of a light emitting device of the lighting device of FIG. 1, FIG. 3 is a side sectional view of the light emitting device of FIG. FIG. 5 is an exploded perspective view of the optical plate of the illumination device of FIG. 1, FIG. 6 is a bottom view of the optical plate of the illumination device of FIG. 1, and FIG. 6 is a cross-sectional side view of the optical plate, Fig. 8 is another cross-sectional view of the optical plate of Fig. 6, Figs. 9 and 10 are a plan view and a bottom view of the optical plate, 12 is an assembled perspective view of the illumination device of Fig. 1, Fig. 13 is a cross-sectional view of the illumination device of Fig. 12 on the AA side, and Fig. 14 is a cross- Fig. 15 is a view for explaining the illumination Sectional side view of the device.

1 to 15, the illumination device 101 includes a light emitting device 100 that emits light, and an optical plate 300 that is disposed on the light emitting device 100 and diffuses and wavelength-converts the incident light to emit the light. ).

The light emitting device 100 may emit at least one of ultraviolet light, blue light, green light, and red light, and may emit light having a short wavelength such as ultraviolet light or blue light. The light emitting device 100 may emit different peak wavelengths, for example, emit blue and green light, or emit ultraviolet and visible light, but the present invention is not limited thereto.

The optical plate 300 may be disposed on the light emitting device 100 and may include a phosphor. The optical plate 300 wavelength-converts the light emitted from the light emitting device 100 and emits the light. The optical plate 300 may have a polygonal top view shape, an elliptical shape, or an elliptical shape having a straight line section. The optical plate 300 faces the upper surface of the light emitting device 100 and may be spaced apart from the light sources in the light emitting device 100, for example, the light emitting chips 171 and 172. Therefore, the phosphor in the optical plate 300 can be less affected by the heat generated from the light emitting chips 171 and 172. The optical plate 300 is disposed in contact with the light emitting device 100 to prevent the thickness of the illumination device 101 having the optical plate 300 from being increased.

2 to 4, the light emitting device 100 includes a body 110 having a concave portion 160, a plurality of lead frames 121 and 131 in the concave portion 160, And at least one or a plurality of light emitting chips (171, 172).

The body 110 may include an insulating material or a conductive material. The body 110 may include at least one of a resin material such as polyphthalamide (PPA), a silicon (Si), a metal material, a photo sensitive glass (PSG), a sapphire (Al ₂ O ₃ ), a printed circuit board Can be formed. For example, the body 110 may be made of a resin material such as polyphthalamide (PPA), epoxy, or silicone. A filler, which is a metal oxide such as TiO ₂ or SiO ₂ , may be added to the epoxy or silicon material used as the body 110 to enhance the reflection efficiency. The body 110 may include a ceramic material. As another example, the body 110 may include a circuit board, and may include at least one of a resin substrate, a metal core PCB, and a ceramic substrate. The body 110 may be formed of a dark color or a black color to enhance contrast, but the present invention is not limited thereto.

The body 110 includes a recess 160 having a predetermined depth. The recess 160 may be formed in the form of a concave cup structure, a cavity structure, or a recess structure from the top surface 15 of the body 110, but the present invention is not limited thereto. The sidewalls of the recess 160 may be perpendicular or inclined relative to the bottom, and two or more of the sidewalls may be inclined at the same angle or at different angles. A reflective layer of another material may be further disposed on the surface of the concave portion 160, but the present invention is not limited thereto. The side walls of the recess 160 may have different angles from the upper side wall adjacent to the upper surface 15 of the body 110 and the lower side wall adjacent to the lead frames 121 and 131. However,

The shape of the body 110 may be a polygonal shape such as a triangle, a rectangle, or a pentagon, a shape having a circular shape, an elliptical shape, a curved shape, or a polygonal shape having a curved corner, Do not.

The body 110 may include a plurality of side portions, for example, four side portions 11, 12, 13, and 14 as outer side surfaces. At least one or two or more of the plurality of side portions 11, 12, 13, and 14 may be formed as a surface that is perpendicular or inclined with respect to the lower surface of the body 110. The first side surface portion 11 and the second side surface portion 12 are opposite to each other, and the third side surface portion 11, the second side surface portion 12, (13) and the fourth side surface portion (14) are opposite to each other. The length Y1 of each of the first side surface portion 11 and the second side surface portion 12 may be different from the width X1 of the third side surface portion 13 and the fourth side surface portion 14, 11 and the second side surface portion 12 may be shorter than the maximum length Y2 of the light emitting device 100 and the width X1 of the third side surface portion 13 and the fourth side surface portion 14 That is, longer than the maximum width.

The length Y1 of the first side surface portion 11 or the second side surface portion 12 may be the interval between the third side surface portion 13 and the fourth side surface portion 14, The longitudinal direction of the body 110 is orthogonal to the width direction. 2 and 3, the length Y4 of the upper surface of the body 110 is larger than the upper length Y3 of the recess 160, and the length Y1 is shorter than the length of the bottom of the body 110 .

For example, the length Y2 of the light emitting device 100 may be two or more times longer than the width X1, for example, three times longer than the width X1. In the light emitting device 100, for example, one or more light emitting chips 171 and 172 may be arranged in the longitudinal direction. The longitudinal direction of the light emitting device 100 may be defined as a first axis direction, the width direction may be defined as a second axis direction, and the first axis direction and the second axis direction may be directions perpendicular to each other. have.

In the light emitting device 100, a plurality of light emitting chips 171 and 172 may be arranged at predetermined intervals in the longitudinal direction. In the light emitting device 100, the light emitting chips 171 and 172 may be disposed on the respective lead frames 121 and 131 on the heat radiation side, or a plurality of light emitting chips may be disposed on one lead frame. Further, by arranging the length of the light emitting element 100 longer than the width, the heat radiation efficiency of each of the light emitting chips 171 and 172 can be improved, the size of the light emitting chips 171 and 172 can be increased, can do.

A plurality of lead frames 121 and 131 are disposed in the concave portion 160 of the body 110. The plurality of lead frames 121 and 131 include at least two or three or more metal frames, and may include first and second lead frames 121 and 131, for example. The first and second lead frames 121 and 131 may be separated by a gap portion 119. The first and second lead frames 122 and 132 may have a stepped structure at a portion where the first and second lead frames 122 and 132 are coupled to the body 110. The stepped structure may include a first and a second lead frames 122 and 132, The adhesion area can be increased. The step structure may be formed in a step shape or a groove shape, but is not limited thereto.

One or a plurality of light emitting chips 171 and 172 may be disposed in the recess 160. The plurality of light emitting chips 171 and 172 may include at least two or three or more LED chips, and may include first and second light emitting chips 171 and 172, for example. One or a plurality of light emitting chips 171 and 172 may be disposed on at least one of the plurality of lead frames 121 and 131. For example, at least one light emitting chip 171 and 172 may be disposed on each of the plurality of lead frames 121 and 131 . The plurality of light emitting chips 171 and 172 may be selectively connected to the plurality of lead frames 121 and 131. Each of the light emitting chips 171 and 172 may be defined as a light source.

At least one of the plurality of lead frames 121 and 131 may include a cavity having a lower depth than the bottom of the recess 160, for example. The first lead frame 121 includes a first cavity 125 and the first cavity 125 is recessed to a lower depth than the bottom of the cavity 160. The first cavity 125 may have a concave shape such as a cup shape or a recess shape from the bottom of the concave portion 160 in the bottom direction of the body 110. The first cavity 125 may be formed by bending or etching the first lead frame 121, but the present invention is not limited thereto.

The sidewall and bottom of the first cavity 125 are formed by the first lead frame 121 and the peripheral sidewall of the first cavity 125 may be formed to be inclined from the bottom of the first cavity 125 have. Two opposing sidewalls of the sidewalls of the first cavity 125 may be inclined at the same angle or inclined at different angles. The frame thickness of the side wall and the bottom of the first cavity 125 may be the same as the thickness of the first lead frame 121.

The second lead frame 131 includes a second cavity 135 and the second cavity 135 is recessed to a lower depth than the bottom of the cavity 160. The second cavity 135 may have a concave shape such as a cup structure or a recess in the bottom surface of the body 110 from the top surface of the second lead frame 131 or the bottom of the concave portion 160, and a recess shape. The second cavity 135 may be formed by bending or etching the second lead frame 131, but the present invention is not limited thereto. The bottom and sidewalls of the second cavity 135 may be formed by the second lead frame 131 and the sidewalls of the second cavity 135 may be formed obliquely from the bottom of the second cavity 135 . The corresponding two sidewalls of the sidewalls of the second cavity 135 may be inclined at the same angle or inclined at different angles. The frame thickness of the side wall and the bottom of the second cavity 135 may be the same as the thickness of the second lead frame 131.

The bottom shapes of the first cavity 125 and the second cavity 135 may be polygonal, polygonal having a partial curved surface, circular or elliptical, but are not limited thereto. In the embodiment, the first cavity 125 or the second cavity 135 may not be formed, but the present invention is not limited thereto.

A lower surface of the first lead frame 121 and the second lead frame 131 may be exposed to the lower portion of the body 110 and may be disposed on the same plane as the lower surface of the body 110, have. The first lead frame 121 and the second lead frame 131 partially include the opposite sides of the bottom surfaces of the first and second cavities 125 and 135. The bottom surfaces of the first and second cavities 125 and 135 may be exposed on the lower surface of the body 110.

The first lead frame 121 may include a first lead portion 123 and the first lead portion 123 may protrude from the third side portion 13 of the body 110. The second lead frame 131 may include a second lead portion 133 and the second lead portion 133 may protrude from the fourth side portion 14 of the body 110. One or a plurality of the first lead portions 123 may protrude, and one or a plurality of the second lead portions 133 may protrude. The first and second lead portions 123 and 133 may protrude in opposite directions with respect to the concave portion 160. The first and second lead portions 123 and 1233 and the first and second cavities 125 and 135 may be bonded to each other with a bonding member on a circuit board.

The first lead frame 121 and the second lead frame 131 may be formed of a metal material such as titanium, copper, nickel, gold, chromium, tantalum, And may include at least one of tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), and phosphorous (P). The thicknesses of the first and second lead frames 121 and 131 may be in a range of 0.15 mm or more, for example, 0.18 mm to 1.5 mm, but the present invention is not limited thereto. When the thickness of the first and second lead frames 121 and 131 is less than 0.15 mm, injection molding is difficult. In addition, when the thickness of the first and second lead frames 121 and 131 exceeds 1.5 mm, the thickness (t1 in FIG. 4) of the light emitting device 100 can be increased and the size thereof can be increased, . If the thicknesses of the first and second lead frames 121 and 131 are less than 0.15 mm, the electrical characteristics and heat dissipation characteristics may be deteriorated.

The thicknesses of the first and second lead frames 121 and 131 may be the same, but the present invention is not limited thereto. The first and second lead frames 121 and 131 function as a lead frame for supplying power. In addition to the first and second lead frames 121 and 131, a metal frame for radiating heat or an intermediate frame for electrically connecting between the first and second lead frames 121 and 131 may be further disposed in the recess 160, It is not limited thereto.

A first light emitting chip 171 is disposed in the first cavity 125 of the first lead frame 121. For example, the first light emitting chip 171 is bonded to the first cavity 125 with an adhesive But it is not limited thereto. A second light emitting chip 172 is disposed in the second cavity 135 of the second lead frame 131. For example, the second light emitting chip 172 is bonded to the second cavity 135 with an adhesive But it is not limited thereto. The adhesive may be an insulating adhesive or a conductive adhesive. The insulating adhesive may include a material such as epoxy or silicone, and the conductive adhesive may include a bonding material such as solder.

The first and second light emitting chips 171 and 172 may selectively emit light in the range of the visible light band to the ultraviolet light band. For example, an ultraviolet LED chip, a red LED chip, a blue LED chip, a green LED chip, ) LED chips, and white LED chips. The first and second light emitting chips 171 and 172 include an LED chip including at least one of a compound semiconductor of group III-V elements and a compound semiconductor of group II-VII elements. The first and second light emitting chips 171 and 172 may be a horizontal chip structure in which two electrodes in the chip are disposed adjacent to each other, or may be arranged as vertical chips disposed on opposite sides, but the invention is not limited thereto. When the light emitting chips 171 and 172 are horizontal chips, the lower insulating substrate may be bonded to the lead frame with an insulating or conductive adhesive. Alternatively, when the light emitting chips 171 and 172 are vertical chips, the lower electrode of the vertical chip may be electrically connected to the lead frame by a conductive adhesive.

2, 3, and 8, the first light emitting chip 171 is connected to a first lead frame 121 disposed at the bottom of the concave portion 160 with a first wire 173, for example, And may be connected to the second lead frame 131 by the second wire 174, but the present invention is not limited thereto. The second light emitting chip 172 may be connected to the first lead frame 121 by a third wire 175 and may be connected to the first lead frame 121 by a fourth wire 176, 2 lead frame 131, but the present invention is not limited thereto.

The light emitting device 100 may include a protection device. The protection element may be disposed on a part of the first lead frame 121 or the second lead frame 131. The protection element may be disposed within the body 110. The protection device may be implemented with a thyristor, a zener diode, or a TVS (Transient Voltage Suppression), and the zener diode protects the light emitting chips 171 and 172 from electrostatic discharge (ESD). The protection element may be connected in parallel to the connection circuit of the first light emitting chip 171 and the second light emitting chip 172.

The molding member 181 may be formed on at least one or both of the concave portion 160, the first cavity 125, and the second cavity 135. The molding member 181 includes a light-transmitting resin layer such as silicon or epoxy, and may be formed as a single layer or a multi-layer.

The surface of the molding member 181 may be formed in a flat shape, a concave shape, a convex shape, or the like, but is not limited thereto.

The molding member 181 may be a phosphor-free layer. The molding member 181 may include a diffusing agent or a scattering agent other than the phosphor. When the molding member 181 has a phosphor, the phosphor is disposed adjacent to the light emitting chips 171 and 172, thereby deteriorating the phosphor due to heat generated from the light emitting chips 171 and 172. Such deterioration of the phosphor can change the color temperature and the color coordinates, and can lower the reliability of the light emitting element 100. [ The embodiment can provide the phosphor in the optical plate 300 spaced apart from the light emitting chips 171, 172. As another example, the molding member 181 on the light emitting chips 171, 172 can be removed. When the molding member 181 is removed, an air gap may exist in the recess 160.

5 to 8, the optical plate 300 includes a support 310 having an open region 342, a phosphor layer 340, a support 310, and a phosphor layer 340 in the support 310, (320, 330) disposed on at least one of an upper surface and a lower surface of the substrate.

The thickness of the optical plate 300 may range from 0.7 mm or more, for example, 0.75 mm to 1.5 mm. When the thickness of the optical plate 300 is less than 0.7 mm, it is difficult to secure the thickness of the phosphor layer 340 and the wavelength conversion efficiency is lowered. When the thickness exceeds 1.5 mm, Increasing the thickness of the films 320 and 330 may cause optical loss. Here, the thickness of the phosphor layer 340 may be thinner than the thickness of the support 310, and may be in a range of less than 1 mm, for example, between 0.4 mm and 0.7 mm. When the thickness of the phosphor layer 340 is thinner than the above range, the wavelength conversion efficiency is lowered. When the thickness is larger than the above range, the thickness of the illumination device is increased.

The support 310 includes an open region 342 therein, and the outer shape may include a circular or polygonal frame shape. The support 310 may include a frame shape on the outer periphery of the open region 342. The open region 342 may include a circular or polygonal shape.

The open region 342 may have a shape corresponding to the shape of the concave portion 160 of the light emitting device 100 as shown in FIGS. 13 to 15, but the present invention is not limited thereto. When the open region 342 has a shape corresponding to the shape of the concave portion 160, the light loss can be reduced and the light incidence efficiency to the phosphor layer 340 can be improved. The open area 342 may have the same area as the upper surface or the light emitting surface of the molding member 160, or may have a smaller or larger area than the upper surface of the molding member 160. The lower area of the open area 342 may be equal to or smaller than the upper surface area.

The support 310 may be formed to surround a side surface of the phosphor layer 340. The support 310 may be formed to surround the outer periphery of the phosphor layer 340.

The support 310 may be a reflective material. The support 310 may include a glass material such as white glass or a glass material having a high reflectance. The white glass or the glass material having high reflectance can be formed by adding white particles and / or bubbles into the transparent glass. The reflectance of the support 310 may be higher than that of the transparent films 320 and 330. When the support 310 is a reflective material, the light incident on the phosphor layer 340 can be prevented from being emitted to the side, thereby improving the light extraction efficiency. As another example, the support 310 may include a resin material, and the resin material may include a resin material such as polyphthalamide (PPA), an epoxy or a silicone material. A metal oxide such as TiO ₂ , SiO ₂ or a metal oxide or a white particle filler may be added to the resin material. The support 310 may be made of a white resin. The support 310 may include a ceramic material. The support 310 may be formed of a dark color or a black color in order to improve the contrast, but the present invention is not limited thereto. When the support 310 is made of a reflective material, the incident light can be reflected. A fine irregular pattern may be formed on the inner surface of the support 310, but the present invention is not limited thereto.

As another example, the support 310 may be a light-transmitting material, for example, a transparent glass material or a transparent resin material. The support 310 may be made of a resin material such as silicon or epoxy. When the support 310 is made of a light-transmitting material, the incident light can be emitted through the side surface, thereby providing wide light directivity.

As another example, a metal reflective layer may be disposed on the inner surface or the inner surface / lower surface of the support 310, and the reflective layer may effectively reflect the incident light. At this time, the support 310 may be made of a translucent material or a reflective material.

 At least one of the inner surface and the outer surface of the support 310 may be formed as a vertical or inclined surface, but the present invention is not limited thereto. The distance W1 between the inner side surface and the outer side surface of the support body 310 in the longitudinal direction may be in a range of 0.4 mm or more, for example, 0.45 mm to 0.6 mm. When the support body 310 is smaller than this range, If it is difficult and larger than the above range, material waste can be caused. The distance W1 may be the width of the outer frame of the open area 342 of the support 310. [

The distance W2 between the inner side surface and the outer side surface of the support 310 in the width direction may be equal to or smaller than the gap W1, but is not limited thereto. The intervals W2 and W1 may vary depending on the recess size of the light emitting device, but are not limited thereto.

The inner surface of the support 310, for example, the surface that contacts the phosphor layer 340, may be disposed perpendicular or inclined with respect to the lower surface of the first transparent film 320. When the inner surface of the support 310 is inclined, the top surface width or the top surface area of the phosphor layer 340 may be larger than the bottom width or the bottom surface area.

The phosphor layer 340 may include a phosphor in a resin material such as transparent silicon or epoxy. The phosphor layer 340 may be provided in a film form. The phosphor layer 340 converts the wavelength of the light emitted from the light emitting chips 171 and 172, as shown in FIGS. The phosphor layer 340 may include at least one of red, green, yellow, and blue phosphors, or may include different types of phosphors. The phosphor excites a part of the emitted light and emits it as light of a different wavelength. The phosphor may be selectively formed from YAG, TAG, Silicate, Nitride, and Oxy-nitride based materials. The phosphor may include at least one of a red phosphor, a yellow phosphor, and a green phosphor.

The phosphor layer 340 may include a quantum dot. The quantum dot may include an II-VI compound or a III-V compound semiconductor, and may include at least one of red, green, yellow, and red quantum dots or different types.

The quantum dot is, for example, ZnS, ZnSe, ZnTe, CdS , CdSe, CdTe, GaN, GaP, GaAs, GaSb, InP, InAs, In, Sb, AlS, AlP, AlAs, PbS, PbSe, Ge, Si, CuInS 2, CuInSe _2, and the like, and combinations thereof. Since the quantum dots have a large change in the luminous efficiency depending on the temperature, the quantum dots can be separated from the light emitting chips 171 and 172 as in the embodiment, thereby reducing the change in luminous efficiency.

Transparent films 320 and 330 may be disposed on at least one or both of the phosphor layer 340 and the phosphor layer 340. The transparent films 320 and 330 may include a first transparent film 320 disposed under the phosphor layer 340 and a second transparent film 330 disposed on the phosphor layer 340. The transparent films 320 and 330 may be disposed on the incident surface and / or the emission surface of the phosphor layer 340. In this optical plate 300, any one of the first and second transparent films 320 and 330 may be removed, for example, the first or second transparent films 320 and 330 may be removed, but the present invention is not limited thereto. In manufacturing the optical plate 300, any one of the transparent films 320 and 330 may be a base film supported during the dispensing process of the phosphor layer 340.

The first and second transparent films 320 and 330 may include glass or a transparent resin film. The first and second transparent films 320 and 330 are bonded to the support 310 to protect the phosphor layer 340. The first and second transparent films 320 and 330 may be formed of a material having a refractive index equal to or lower than that of the molding member 181. The first and second transparent films 320 and 330 may be formed of a material having a difference in refractive index of the molding member 181 of 0.2 or less. The first and second transparent films 320 and 330 may have a refractive index lower than that of the molding member 181 and the phosphor layer 340.

One or a plurality of open holes may be disposed in a predetermined region of the first transparent film 320, and a part of the phosphor layer 340 may protrude from the one or the plurality of holes. At this time, a part of the protruded phosphor layer 340 may contact the molding member 181, but the present invention is not limited thereto. The holes may be arranged in one or a plurality of areas not overlapping the light emitting chips 171 and 172.

As another example, when the molding member 181 is removed, an air gap may exist in the concave portion 160 of the light emitting device 100, and the first transparent film 320 may be disposed.

The first transparent film 320 may be attached to the lower surface of the support 310 and the lower surface of the phosphor layer 340. The second transparent film 330 may be attached to the upper surface of the support 310 and the upper surface of the phosphor layer 340. The lower surface of the optical plate 300 may be adhered to the molding member 181 as shown in FIGS. The lower surface of the first transparent film 320 may be adhered to the surface of the molding member 181. The first transparent film 320 is adhered before the molding member 181 is cured so that the light loss at the interface between the first transparent film 320 and the molding member 181 can be reduced.

The thickness of the first and second transparent films 320 and 330 may be 0.3 mm or less and may be 0.05 mm or more, for example, 0.08 mm to 0.2 mm. If the thickness of the first and second transparent films 320 and 330 is less than 0.05 mm, handling may be difficult and stiffness may be caused. When the thickness exceeds 0.2 mm, the thickness of the optical plate 300 becomes thick The light transmittance may be lowered. The thickness of the first and second transparent films 320 and 330 may be the same or different from each other. If the thicknesses of the first and second transparent films 320 and 330 are different from each other, the first transparent film 320 may have a thickness greater than that of the second transparent film 330. This is because the thickness of the first transparent film 320 is thicker than the thickness of the second transparent film 330 so that it can be stably bonded to the light emitting device 100.

The thickness of the phosphor layer 340 may be greater than the thickness of the first transparent film 320 or the second transparent film 330 and may be greater than the sum of the thicknesses of the first and second transparent films 320 and 330. The thickness of the phosphor layer 340 may be 5 to 7 times the thickness of the first transparent film 320.

The phosphor layer 340 may have a thickness equal to the thickness of the support 310. In this case, the first and second transparent films 320 and 330 may be formed on the upper and lower surfaces of the support 310, Can be contacted.

As another example, the phosphor layer 340 may have a thickness smaller than the thickness of the support 310. The upper surface of the phosphor layer 340 may be flat, convex or concave. The support 310 may protrude from the outer periphery of the first and second transparent films 320 and 330, but the present invention is not limited thereto.

The optical plate 300 according to the embodiment can be provided at a thickness thinner than the thickness of the light emitting element 100 (t1 in Fig. 4), and can function as an illumination plate or a fluorescent plate on the light emitting element 100. [ The thickness of the illumination device 101 may be less than or equal to 2 mm and the thickness of the optical plate 300 and the light emitting device 100 may be less than or equal to 2 mm. There is a problem in that the thickness of the light unit having such a structure is also increased.

The optical plate is fabricated by forming a support 310 on the first transparent film 320 and then dispensing the phosphor layer 340 on the open region 342 of the support 310. The second transparent film 330 is laminated on the phosphor layer 340 and the support 320 before the phosphor layer 340 is cured and then cut to a predetermined size to form a desired optical plate 300 .

As shown in FIGS. 7 and 8, the length D1 of the open area 342 of the support 310 may be 1/2 times or less, for example, 1/3 or less of the width D4. The length D1 and the width D4 of the open region 342 may vary depending on the emitting surface of the light emitting device, that is, the top surface size of the molding member.

9-11, adhesive tapes 318 and 319 may be disposed on the upper surface 311 and the lower surface 312 of the support 310. As shown in FIG. The adhesive tapes 318 and 319 may attach the first transparent film 320 and the second transparent film 330 to the upper surface 311 and the lower surface 312 of the support 310, respectively.

The width M1 of the adhesive tapes 318 and 319 may be smaller than the width W1 or W2 between the inner side surface and the outer side surface of the support 310. [ The adhesive tapes 318 and 319 may be separated from the inner surface and the outer surface at predetermined intervals M2 and M3 on the upper surface 311 or the lower surface 312 of the support 310. [ This may cause optical interference problems when the adhesive tape 318 or 319 is positioned on the inner surface of the support 310 or protruded to the phosphor layer 340 and may be located on the outer surface of the support 310 When the optical plate 300 protrudes to the outer surface of the support 310, the appearance of the optical plate 300 may be deteriorated.

The first and second transparent films 320 and 330 may be attached to the upper surface 311 and the lower surface 312 of the support 310 by the adhesive tapes 318 and 319.

13 through 15, when the molding member 181 is molded in the light emitting device 100, the process of joining the optical plate 300 onto the light emitting device may be performed in a similar manner to that of the molding member 181 The first transparent film 320 may be disposed on the molding member 181 before curing.

The optical plate 300 may be coupled to the light emitting device 100 as shown in FIGS. The optical plate 300 may be attached to the upper surface of the body 110 of the light emitting device 100. As shown in FIG. 14, the optical plate 300 may be spaced apart from the light emitting chips 171 and 172 by a predetermined gap G1. The gap G1 may be in a range of 0.2 mm or more and 1 mm or less, for example, in a range of 0.2 mm to 0.7 mm. The interval between the phosphor layer 340 and the light emitting chips 171 and 172 may be smaller than G1, for example, 0.7 mm or less, and may range from 0.25 mm to 0.65 mm, for example. If the gap G1 between the light emitting chips 171 and 172 and the first transparent film 320 is less than the above range, the thickness of the body 110 may be thinned to make it difficult to secure rigidity and cause deterioration of the phosphor. The light emitting device 100 may be thickened and the light diffusion effect may be insignificant.

Table 1 compares the luminous intensity according to the distance between the light emitting chip and the phosphor layer. The first transparent film was designed to have a thickness of 0.1 mm.

Comparative Example 1 Comparative Example 2 Example Distance between the phosphor layer and the light emitting chip (mm) 0 1.0 0.3 Light intensity (mW / mm ² ) 100% 8.84% 65.29%

In Comparative Example 1, the distance between the light emitting chip and the phosphor layer was 0, and in Comparative Example 2, the optical plate had a predetermined air gap on the light emitting element And the distance between the light emitting chip and the optical plate is 1 mm or more. In this embodiment, the distance between the light emitting chip and the phosphor layer is 0.2 mm or more, for example, 0.3 mm to be. In this case, when the luminous intensity on the surface of the phosphor layer is taken as 100% for Comparative Example 1, it is less than 10% for Comparative Example 2 and 65% or more for Examples.

The length D2 of the optical plate 300 in the first axial direction may be shorter than the maximum length Y2 of the light emitting device 100 in the first axial direction and may be the same as the length Y1 of the body 110 Or otherwise formed. The length Y1 of the body 110 may be the lower length of the body 110 and the maximum length of the body 110. [ The length D2 in the first axial direction of the optical plate 300 may be equal to or larger than the length Y4 of the top surface 110 of the body 110 as shown in FIG. The longitudinal direction of the optical plate 300 may be defined as a first axis direction that is the same as the longitudinal direction of the light emitting device 100, and the width direction is a direction perpendicular to the second axis direction, that is, .

The optical plate 300 may be disposed on the upper surface 15 of the body 110 of the light emitting device 100. For example, the bottom surface area of the optical plate 300 may be equal to, greater than, or less than the top surface area of the body 110. The bottom surface length of the optical plate 300 may be the same as or different from the length of the top surface of the body 110 (Y4 in FIG. 3). The length of the phosphor layer 340 may be shorter than the length of the top surface 110 of the body 110 (Y4 in FIG. 3).

15, the width D3 of the optical plate 300 in the second axial direction may be narrower than the width X4 of the light emitting device 100 in the second axial direction. The optical plate 300 may be disposed on the upper surface 15 of the body of the light emitting device 100. The support 310 of the optical plate 300 may overlap the upper surface 15 of the body 110 in the vertical direction. The first transparent film 320 may be disposed on the upper surface of the body 110. For example, the lower surface of the lower surface of the first transparent film 320 may be adhered to the upper surface of the body 110 with an adhesive . The outer circumference of the first transparent film 320 may be disposed outside the recess 160 or the area of the molding member 181. At least one or both of the support 310 and the first transparent film 320 may be adhered to the upper surface of the body 110 with an adhesive. A part of the support 310 may be arranged to overlap with the upper surface of the body 110 in the vertical direction.

When the area of adhesion between the lower surface of the optical plate 300 and the upper surface 15 of the body becomes larger, the horizontal flow of the optical plate 300 can be reduced. The outer surface of the optical plate 300 may be adhered to the upper surface of the body 110 as an adhesive.

13 and 14, the optical plate 300 may have the phosphor layer 340 disposed in a region corresponding to the concave portion 160 of the light emitting device 100. Accordingly, the light emitted through the concave portion 160 may enter the phosphor layer 340 through the first transparent film 320, be wavelength-converted, and be emitted to the second transparent film 330.

The molding member 181 may be disposed under the first transparent film 320. The molding member 181 may contact the lower surface of the first transparent film 320. The lower surface of the first transparent film 320 may be disposed above the upper surface of the body 110 or above the upper surface of the molding member 181. The first transparent film 320 may be disposed between the molding member 181 and the phosphor layer 340.

The length D1 of the phosphor layer 340 in the first axis direction may be equal to or smaller than the length Y3 of the concave portion 160 in the first axis direction as shown in FIGS. The width D4 of the phosphor layer 340 in the second axis direction may be equal to or less than the width X2 of the concave portion 160 in the second axis direction. The length D1 in the first axis direction of the phosphor layer 340 may be larger than the width D4 in the second axis direction. The phosphor layer 340 may overlap with the concave portion 160 in the vertical direction. Accordingly, the phosphor layer 340 can effectively convert the wavelength of light emitted through the concave portion 160 of the light emitting device 100.

The length E1 of the light emitting chips 171 and 172 may be equal to or longer than the width E2 of the light emitting chips 171 and 172,

16 is a modification of the optical plate in the illumination device according to the embodiment.

16, the optical plate 300 includes a support 310 having an open region 342 disposed on the light emitting device 100 disclosed in the embodiment, a first transparent film 320, a second transparent film 330 and a phosphor layer 340 in the open region 342.

The length D1 of the open region 342 of the support 310 is equal to or longer than the length Y3 of the concave portion 160 of the light emitting device 100 or the length of the top surface of the molding member 181 . The length of the phosphor layer 340 may be equal to or longer than an upper length Y3 of the concave portion 160 or an upper surface length of the molding member 181. [

The outer surface of the optical plate 300 may protrude outward from the area of the light emitting device 100. Accordingly, the optical plate 300 can be adhered to an area wider than the top surface area of the light emitting device 100, and stably attached to the light emitting device 100. The outer side of the first transparent film 320 may protrude outward from the body 110 of the light emitting device 100. The lower surface area of the first transparent film 320 may be larger than the upper surface area of the recess 160 or the upper surface area of the molding member 181 It can be wider.

The outer side of the support 310 may protrude outward from the body 110 of the light emitting device 100. The outer side of the second transparent film 330 may protrude outward from the body 110 of the light emitting device 100. The length D2 of the optical plate 300 may be greater than the length Y1 of the light emitting device 100 to increase the length or area of the phosphor layer 340. [ The optical plate 300 may be stably disposed on the light emitting device 100. The optical plate 300 can provide the incident area of the phosphor layer 340 corresponding to the upper area of the concave portion 181, thereby increasing the light incidence area and improving the light extraction efficiency.

17 is a modification of the optical plate in the illumination device according to the embodiment.

17, the optical plate 300 includes a support 310 having an open area 342 disposed on the light emitting device 100 disclosed in the embodiment, a first transparent film 320, 330 and a phosphor layer 340 in the open region 342.

The length D2 of the optical plate 300 or the length of the support 310 may be shorter than the length Y4 of the top surface of the light emitting device 100. [ Accordingly, the optical plate 300 may be disposed inside the outline of the upper surface 15 of the light emitting device 100. If the volume of the optical plate 300 is reduced, the bonding efficiency with the molding member 181 can be further improved. The outer side of the upper surface 15 of the light emitting device 100 is exposed to the outside of the optical plate 300 so that the light leaked to the optical plate 300 can be reflected by the upper surface 15 of the light emitting device 100 .

14, when the light emitting chips 171 and 172 are disposed in the cavities 125 and 135 in the lead frames 121 and 131 in the light emitting device 100, the light emitting chips 171 and 172 and the optical plate 300 That is, it may be difficult to reduce the distance between the light emitting chips 171 and 172 and the phosphor layer 340. For this, the thickness of the light emitting chips 171 and 172 may be 30 μm or more, for example, 70 μm or more to provide a straight line distance of less than 1 mm between the light emitting chips 171 and 172 and the phosphor layer 340. The thickness of the light emitting chips 171 and 172 may be in the range of 30 μm to 300 μm, for example, in the range of 70 μm to 200 μm. When the light emitting chips 171 and 172 are thinner than the thickness range, there is a problem.

18 and 19 are side cross-sectional views of a light emitting device of a lighting device according to the second embodiment. In the description of the second embodiment, the same parts as those of the first embodiment will be referred to in the first embodiment, and redundant description may be omitted.

18 and 19, an illumination device includes a light emitting device 100A and an optical plate 300 on the light emitting device 100A. The above-described optical plate 300 can be applied to the above-described embodiment. The light emitting device 100A includes a body 110A having a concave portion 162, a plurality of lead frames 122 and 132 in the concave portion 162, and a plurality of light emitting chips 171 and 172 in the concave portion 162 do.

The optical plate 300 may be spaced apart from the light emitting chips 171 and 172 of the light emitting device 100A by a predetermined gap G2. The gap G2 may range from 0.2 mm to 1 mm, for example, from 0.2 mm to 0.7 mm. The interval between the phosphor layer 340 and the light emitting chips 171 and 172 may be smaller than G1, for example, 0.7 mm or less, and may range from 0.25 mm to 0.65 mm, for example. If the distance G2 between the light emitting chips 171 and 172 and the first transparent film 320 of the optical plate 300 is less than the above range, the thickness of the body 110 becomes thin, and it is difficult to secure rigidity, If it is larger than the above range, the light emitting device 100A may be thickened and the light diffusion effect may be insignificant. The sum of the thicknesses of the light emitting device 100A and the optical plate 300 is 2 mm or less, thereby preventing the thickness of the lighting device such as the backlight unit from increasing. The second embodiment differs from the first embodiment in that the lead frame of the light emitting device does not have a cavity, so that the straight distance between the light emitting chips 171, 172 and the phosphor layer 340 can be reduced. The distance G2 between the optical plate 300 and the light emitting chips 171 and 172 can be adjusted by adjusting the thickness of the light emitting chips 171 and 172. [

At least one or both of the plurality of lead frames 122 and 132 may be formed as a horizontal surface on an upper surface. That is, it is possible to provide a lead frame having a flat upper surface without forming a cavity in each of the lead frames 121 and 131 as shown in FIG.

The plurality of lead frames 122 and 132 includes a first lead frame 122 and a second lead frame 132 spaced from the first lead frame 122.

The top surface width of the first lead frame 122 may be wider than the bottom width, and the top surface area thereof may be wider than the bottom surface area. The top surface width of the second lead frame 132 may be wider than the bottom width, and the top surface area thereof may be wider than the bottom surface area. As a result, the surface area of the first and second lead frames 122 and 132 can be increased, the adhesion with the body 110A can be improved, and the heat radiation efficiency can be increased.

The first and second lead frames 122 and 132 may have stepped structures 22 and 32 in regions facing each other. The stepped structures 22 and 32 can be increased in area of adhesion with the gap portion 119 disposed between the first and second lead frames 122 and 132. The step structures 22 and 32 may be formed in a stepped shape or have inclination and are not limited thereto.

The gap portion 119 may be disposed in an area between the first and second lead frames 122 and 132 or may be disposed on an upper surface of the first and second lead frames 122 and 132 in part. The gap portion 119 may be made of the same material as the body 110A or may be made of another insulating material, but the present invention is not limited thereto.

The first and second lead frames 122 and 132 include holes 23 and 33 and a portion 116 and 117 of the body 110A may be coupled to the holes 22 and 33. [ One or a plurality of holes 23 of the first lead frame 122 may be arranged to overlap with the body 110A in the vertical direction. One or a plurality of holes 33 of the second lead frame 132 may be arranged to overlap with the body 110A in the vertical direction. The width of each of the holes 23 and 33 may be larger than the width of the upper portion, but is not limited thereto. Accordingly, the adhesive force between the body 110A and the holes 23 and 33 of the lead frames 122 and 132 can be increased, thereby preventing moisture penetration.

Fig. 20 is a view showing an optical plate having a transflective mirror and an illumination device having a light emitting device according to an embodiment, and Fig. 21 is another example of the light emitting device of Fig.

20 and 21, the optical plate 300 may include a semi-transparent mirror 351 on the bottom surface thereof. The transflective mirror 351 may be disposed to face the light emitting chips 171 and 172 of the light emitting devices 100 and 100A disclosed in the embodiment. The transflective mirror 351 may be arranged to overlap the light emitting chips 171 and 172 of the light emitting devices 100 and 100A in the vertical direction. The transflective mirror 351 may be disposed on the lower surface of the first transparent film 320 of the optical plate 300. The semi-transparent mirror 351 may be in contact with the molding member 181 when the light emitting device 100 or 100A includes the molding member 181. The lower surface of the semi-transmissive mirror 351 may be disposed lower than the upper surface of the molding member 181.

The transflective mirror 351 may be disposed between the light emitting chips 171 and 172 and the first transparent film 320. The transflective mirror 351 may be disposed between the light emitting chips 171 and 172 and the phosphor layer 340.

The semi-transmissive mirror 351 transmits light incident from the light emitting chips 171 and 172 and reflects some light. The semi-transmissive mirror 351 may have a higher reflectivity than the transmittance.

The bottom surface of the transflective mirror 351 may be larger than the top surface area of the light emitting chips 171 and 172. Thus, the transflective mirror 351 transmits and reflects relatively high incident light. The width E4 of the transflective mirror 351 may be wider than the width E1 of the light emitting chips 171 and 172. Thus, the transflective mirror 351 can transmit and reflect light incident on a region larger than the upper surface area of the light emitting chips 171 and 172.

When a plurality of light emitting chips are provided, a plurality of the semi-transmitting mirrors 351 may be disposed on the respective light emitting chips 171 and 172 so as to face each other. The semi-transmissive mirror 351 may have a circular, polygonal, or elliptical top view shape, but is not limited thereto. Since the semi-transmissive mirror 351 diffuses the incident light, the semi-transmissive mirror 351 can be incident on the phosphor layer 340 of the optical plate 300 with a uniform light distribution.

20, some light emitted from the light emitting chips 171 and 172 is transmitted through the transflective mirror 351 and a part of the light is reflected by the transflective mirror 351 to form the lead frames 121 and 131 Lt; / RTI > can be re-reflected at the surface.

Some light emitted from the light emitting chips 171 and 172 is transmitted through the transflective mirror 351 and a part of the light is reflected by the transflective mirror 351 to form flattened lead frames 121 and 131 Can be re-reflected by the surface. The semi-transmissive mirror 351 may be applied to the optical plate disclosed in the embodiment of Figs. Further, the above-mentioned semi-transmissive mirror can be applied to the optical plate of the illumination element of the embodiment described later.

In the optical plate 300 of the embodiment, a part of the light incident on the first transparent film 320 is incident on the outer side of the first transparent film 320 through the area between the upper surface of the body of the light emitting device 100, . That is, a light leakage problem may occur through the outer circumference of the first transparent film 320. This light leakage problem can degrade the light flux extracted through the second transparent film 330 of the optical plate 300. Hereinafter, another embodiment may provide a plate cover of a reflective material having a structure capable of reducing the light leakage problem.

22 is a view showing the illumination device according to the third embodiment, FIG. 23 is a plan view showing the optical and plate cover in the illumination device shown in FIG. 22, FIG. 24 is a combined side view of the optical and plate cover in FIG. 22, Fig. 25 is another sectional side view of the optical and plate cover of Fig. 22, Fig. 26 is an engaging side sectional view of the lighting element of Fig. 22, and Fig. 27 is another side sectional view of the lighting element of Fig.

22-27, an illumination device includes a light emitting device 100, an optical plate 300 on the light emitting device 100, and a plate cover 360 on the optical plate 300. The light emitting device 100 and the optical plate 300 will be described with reference to the above description, and redundant description of the same configuration will be omitted.

The plate cover 360 has an opening 365 and includes a side cover portion 361 and a top cover portion 362. The side cover portion 361 is disposed outside the side surface of the optical plate 300 and may reflect light leaking through the side surface of the optical plate 300. This side cover portion 361 can block leakage light that may affect the distribution of the directivity angle of the illumination device and the light distribution.

The optical plate 300 may be inserted into the plate cover 360. The top cover portion 362 of the plate cover 360 may be disposed around the upper surface of the optical plate 300. The top cover portion 362 may press the upper surface of the optical plate 300. The top cover portion 362 and the side cover portion 361 may minimize the flow of the plate cover 360.

The plate cover 360 may be made of a metal or a non-metal material. When the plate cover 360 is a metal, it may be a metal material such as iron (Fe), copper (Cu), aluminum (Al), or silver (Ag) If the plate cover 360 is made of a non-metal material, it may be made of a plastic material. The plate cover 360 may be made of a material having a high reflectance. At least one of a highly reflective material such as silver (Ag), an Ag alloy, aluminum (Al), and an Al-alloy may be plated or coated on the surface of the plate cover 360. The plate cover 360 reflects light incident on the surface, thereby preventing the amount of light from being reduced.

As shown in FIG. 23, the length D5 of the plate cover 360 may be at least two times the width D6, for example, three times or more. The ratio between the length D5 and the width D6 of the plate cover 360 may vary depending on the ratio of the length Y1 and the width X4 of the body 110 shown in Figs. The condition of the length D5? Y1 is satisfied, and the condition of the width D6? X4 is satisfied.

24, the plate cover 360 may extend from the upper surface of the optical plate 300 to the upper outer periphery of the light emitting device 100. As shown in FIG. The lateral height of the plate cover 360 may be greater than the thickness or side height of the optical plate 300.

The plate cover 360 may reflect the leaked light traveling through the sides of at least one or both of the first and second transparent films 320 and 330 of the optical plate 300. The plate cover 360 may reflect light emitted to the outside through the support 310 when the support 310 of the optical plate 300 is made of a light transmitting material.

24 and 25, the side cover portion 361 of the plate cover 360 may face the outer surface of the optical plate 300 and may be spaced apart from the outer surface of the optical plate 300. [ have. The first gap D7 in the longitudinal direction between the side wall cover portions 361 of the plate cover 360 may be longer or equal to the length D2 of the optical plate 300 and the second gap in the width direction May be equal to or wider than the width (D3) of the optical plate (300).

The plate cover 360 may be coupled to the light emitting device 100 and the optical plate 300, as shown in FIGS. 26 and 27. The side cover portion 361 of the plate cover 360 may protrude downward from the lower surface of the optical plate 300 by a predetermined length P1. The side cover portion 361 of the plate cover 360 extends from the outer side of the optical plate 300 to the outer side of the light emitting device 100 so as to leak through the side surface of the first transparent film 320, It is possible to block the light that is emitted. The side cover part 361 may reflect light leaking through the side surfaces of the first and second transparent films 320 and 330. The side cover portion 361 of the plate cover 360 may not form a protruding portion of the lower surface of the optical plate 300, but is not limited thereto.

22, 26, and 27, a side cover portion 361 of the plate cover 360 is formed on side portions 11, 12, 13, and 14 of the body 110 of the light emitting device 100 . A stepped structure 43 is disposed on at least one or both of the side portions 11, 12, 13 and 14 of the body 110, The cover portion 361 may correspond.

The step structure 43 of the body 110 may vertically overlap the outer surface of the lower surface of the first transparent film 320 of the optical plate 360 in the vertical direction or may overlap with the support 310 in the vertical direction have. The side cover portion 361 of the plate cover 360 may be disposed on or adjacent to the step structure 43.

The side cover portion 361 of the plate cover 360 may be in close contact with the side surface of the first transparent film 320 or may be disposed within an assembly error range. 27, the side cover portion 361 of the plate cover 360 is spaced apart from the widthwise side surface of the first transparent film 320, May be smaller than the distance from the side in the longitudinal direction. For example, when the length of the first transparent film 320 is larger than the width, the gap between the side cover portion 361 of the plate cover 360 and the widthwise side of the first transparent film 320 The light leakage problem can be improved.

The light emitting device 100 may include a step structure 43 on the side surfaces 11,12,13,14 of the body 110. The step structure 43 may be formed on the upper surface of the body 110 15). ≪ / RTI > The side cover portion 361 of the plate cover 360 may be extended to the stepped structure 43 as shown in FIGS. Accordingly, the plate cover 360 may be formed so that the side cover portion 361 extends to the side portions 11, 12, 13, 14 of the body 110 and is brought into close contact with the step structure 43, Lt; / RTI > Since the side cover portion 361 of the plate cover 360 is formed deeper than the length P1 protruding from the lower surface of the optical plate 300, the depth (P2 in FIG. 27) of the step structure 43 The side cover portions 361 may be disposed adjacent to each other. In addition, the side cover portion 361 of the plate cover 360 may reflect light traveling through the first transparent film 320.

The side cover portion 361 of the plate cover 360 is disposed on the third and fourth side surfaces 13 and 14 of the body 110 of the light emitting device 100 in a position May be disposed closer to the step structure (43) disposed on the second side portion (11, 12). The side cover portion 361 of the plate cover 360 is disposed closer to the long side than the short side of the side surface of the body 110 of the light emitting device 100, Can be effectively reflected.

Examples 1, 2, and 3 of Table 2 are tables for comparing optical powers of the optical plate according to whether or not the optical plate according to the embodiment is coupled to the plate cover. Here, Example 1 is an illuminating element as shown in Fig. 13, Example 2 is an illuminating element having a plate cover without a plated layer, and Example 3 is an illuminating element having a plate cover having a plated layer (for example, Ag plating).

Example 1 Example 2 Example 3 magnitude 100% (standard) 99.4% 101% Leakage light of the first transparent film 0% 0% 0% Leakage of the second transparent film 2.9% 0% 0%

As shown in the above table, when there is no plate cover, 2.9% of light leaked through the side surface of the first transparent film is generated, so that the light distribution characteristic and the color orientation characteristic of the illumination device can be changed by such leakage light. The embodiment may block the leakage light through the side surface of the first transparent film by the plate cover 360.

The side cover portion 361 of the plate cover 300 is disposed adjacent to the step structure 43 so that the molding member 181 leaks through the region between the optical plate 300 and the body 110. [ The leaked molding member 181 can be placed on the stepped structure 43 to prevent the molding member 181 from damaging the appearance.

The plate cover 360 may adhere the optical plate 300 to the light emitting device 100 and prevent the optical plate 300 from flowing. When the plate cover 360 is formed of a metal material, heat generated from the light emitting device 100 and the optical plate 300 can be dissipated.

Since the opening 365 of the plate cover 360 is arranged in an area larger than the area of the upper surface of the phosphor layer 340, the phosphor layer 340 may not interfere with the light emitted from the phosphor layer 340. The opening 365 of the plate cover 360 may face the concave portion 160 of the light emitting device 100.

The top cover portion 362 of the plate cover 360 may be disposed on both sides of the opening 365 in the longitudinal direction. The top cover portion 362 of the plate cover 360 may face the top surface of the body 110 of the light emitting device 100. As another example, the top cover portion 362 of the plate cover 360 may be disposed on both sides in the width direction of the opening portion 365, or may be disposed around the opening portion 365, but is not limited thereto . The top cover portion 362 may have a plurality of recesses 363 at an inner corner and the recess 363 may enhance the rigidity of the top cover portion 362 of the plate cover 360 have.

28 is a modification of the light emitting device in the illumination device of Figs. 22 and 26. Fig.

Referring to FIG. 28, the light emitting device 100 may have a step structure 43 on the first and second side portions 11 and 12 of the body 110 as shown in FIGS. 22 and 26, The step structure may not be formed on the third and fourth side parts 13, That is, the step structure may not be formed on each of the side surfaces of the body 110, but only one or two of the first to fourth side surfaces 11, 12, 13, and 14 may be formed, and the rest may not be formed. Accordingly, it is possible to prevent the rigidity of the body 110 of the light emitting device 100 from being weakened. As another example, the first and second side portions 11 and 12 of the body 110 may be formed on the third and fourth side portions 13 and 14 without forming a step structure, but the present invention is not limited thereto .

Figs. 29 and 30 show an example in which a plate cover is applied to the illumination elements of Figs. 17 and 19. Fig.

29 and 30, the illumination device includes a light emitting device 100A, an optical plate 300 on the light emitting device 100A, and a plate cover 360 on the optical plate 300 . The light emitting device 100A will be described with reference to FIGS. 17 and 19, and the optical plate 300 will be described with reference to the description of the optical plate of FIGS. 5 to 11. FIG.

A step structure 43 is disposed on the outside of the body 110A of the light emitting device 100A and the step structure 43 is disposed along the upper part of the side parts 11, 12, 13, 14 of the body 110A And may be formed at a lower depth than the upper surface 15 of the body 110A. The side cover portion 361 of the plate cover 360 may be disposed on the stepped structure 43.

The side cover portion 361 of the plate cover 360 may reflect the light leaked through the side surface of the first transparent film 320 of the optical plate 300.

31 is a side cross-sectional view showing the illumination device according to the fourth embodiment.

31, an illumination device includes a light emitting device 400 and an optical plate 300 and a plate cover 360 described in the embodiment on the light emitting device 400. The optical plate 300 and the plate cover 360 will be described with reference to the description of the embodiment (s) disclosed above.

The light emitting device 400 includes a body 410, a first lead frame 423 and a second lead frame 421 disposed on the body 410, and a second lead frame 422 disposed on the body 410, And a light emitting chip 470 electrically connected to the lead frame 423 and the second lead frame 421.

The body 410 may include an insulating material or a conductive material. The body 410 may include at least one of a resin material such as polyphthalamide (PPA), a silicon (Si), a metal material, a photo sensitive glass (PSG), a sapphire (Al ₂ O ₃ ), a printed circuit board Can be formed. For example, the body 410 may be made of a resin material such as polyphthalamide (PPA), epoxy, or silicone. A filler, which is a metal oxide such as TiO ₂ or SiO ₂ , may be added to the epoxy or silicon material used as the body 410 to improve the reflection efficiency. The body 410 may include a ceramic material.

The body 410 may provide a recess 425 having an inclined surface around the light emitting chip 470. The molding member 440 may be disposed on the concave portion 425, but the present invention is not limited thereto. The inclined surface of the concave portion 425 may be formed with one or two or more angles, and another reflective member may be further disposed on the inclined surface.

A stepped structure 43 is disposed on the outer side of the body 410 and a side cover portion 361 of the plate cover 360 is extended to the stepped structure 43, And may reflect the leaked light through the side surface of the plate 360.

The first lead frame 421 and the second lead frame 423 are electrically separated from each other and provide power to the light emitting chip 470. The first lead frame 421 and the second lead frame 423 may be disposed on the bottom of the concave portion 425 and may reflect light generated from the light emitting chip 470 to increase the light efficiency And may discharge the heat generated from the light emitting chip 470 to the outside. A separation part is disposed between the first and second lead frames 421 and 423, and the separation part separates the first and second lead frames 421 and 423. The separating portion may be formed of a material of the body 410.

The light emitting chip 470 may be disposed on the first lead frame 421 and may be connected to the first lead frame 423 through a wire 443. The first lead frame 421 may be formed as a cavity in which the light emitting chip 470 is disposed, but the present invention is not limited thereto. The light emitting chip 470 may be arranged in a flip chip manner, but the present invention is not limited thereto.

The optical plate 300 may be disposed facing the light emitting chip 470. The optical plate 300 includes a phosphor and may be disposed on the upper surface of the body 410.

The optical plate 300 includes a support 310 having an open region 342, a transparent layer 340 formed on at least one of the phosphor layer 340, the support 310, and the phosphor layer 340, Films 320 and 330.

The support 310 includes an open region 342 therein, and the outer shape may include a circular or polygonal frame shape, but the present invention is not limited thereto. The open region 342 may include a circular or polygonal shape. The open region 342 has a shape corresponding to the shape of the concave portion 425 of the light emitting device and light emitted through the concave portion 425 can be incident thereon. The support 310 may be formed to surround the side surface of the phosphor layer 340.

The support 310 may include a glass material such as white glass or a glass material having a high reflectance. The white glass or the glass material having high reflectance can be formed by adding white particles and / or bubbles into the transparent glass. The reflectance of the support 310 may be higher than that of the first and second transparent films 320 and 330.

As another example of the support 310, a resin material may be included, and the resin material may include a resin material such as polyphthalamide (PPA), an epoxy or a silicone material. A filler, which is a metal oxide such as TiO ₂ or SiO ₂ , may be added to the resin material. The support 310 may be made of a white resin. The support 310 may include a ceramic material.

The phosphor layer 340 may include a phosphor in a resin material such as transparent silicon or epoxy. The phosphor layer 340 converts the wavelength of light emitted from the light emitting chip 470. The phosphor layer 340 may include at least one of red, green, yellow, and blue phosphors. The phosphor excites a part of the emitted light and emits it as light of a different wavelength. The phosphor may be selectively formed from YAG, TAG, Silicate, Nitride, and Oxy-nitride based materials. The phosphor may include at least one of a red phosphor, a yellow phosphor, and a green phosphor.

The phosphor layer 340 according to an embodiment may include a quantum dot. The quantum dot may include an II-VI compound or a III-V compound semiconductor, and may emit at least one of red, green, yellow, and red quantum dots or different kinds of quantum dots.

The quantum dot is, for example, ZnS, ZnSe, ZnTe, CdS , CdSe, CdTe, GaN, GaP, GaAs, GaSb, InP, InAs, In, Sb, AlS, AlP, AlAs, PbS, PbSe, Ge, Si, CuInS 2, CuInSe _2, and the like, and combinations thereof. Since the quantum dot has a large change in the luminous efficiency depending on the temperature, the quantum dot can be separated from the light emitting chip 470 as in the embodiment, and the change in the luminous efficiency can be reduced.

Transparent films 320 and 330 may be disposed on at least one or both of the phosphor layer 340 and the phosphor layer 340. The transparent films 320 and 330 may include a first transparent film 320 disposed under the fluorescent layer 340 and a second transparent film 330 disposed on the fluorescent layer 340. The transparent films 320 and 330 may be disposed on the incident surface and / or the emission surface of the phosphor layer 340. In this optical plate 300, any one of the first and second transparent films 320 and 330 may be removed, for example, the second transparent film 330 may be removed, but the present invention is not limited thereto.

The first and second transparent films 320 and 330 may include glass or a transparent resin film. The first and second transparent films 320 and 330 are bonded to the support 310 to protect the phosphor layer 340. The first and second transparent films 320 and 330 may be formed of a material having a refractive index equal to or lower than that of the molding member 440 and / or the phosphor layer 340. The first and second transparent films 320 and 330 may be formed of a material having a difference in refractive index of the molding member 440 of 0.2 or less.

The first transparent film 320 may be adhered to the lower surface of the support 310 and the lower surface of the phosphor layer 340. The outer surface of the lower surface of the first transparent film 320 may be adhered to the body 410. The second transparent film 330 may be adhered to the upper surface of the support 310 and the upper surface of the phosphor layer 340.

The phosphor layer 340 may have a thickness equal to the thickness of the support 310. In this case, the first and second transparent films 320 and 330 may be formed on the upper and lower surfaces of the support 310, Can be contacted. The lower surface of the support 310 may be attached to the upper surface of the body 410 of the light emitting device 400 and may be disposed around the first transparent film 320. The lower surface of the optical plate 300 may be adhered on the molding member 440. The lower surface of the first transparent film 320 may be adhered to the surface of the molding member 440.

The optical plate 300 according to the embodiment is provided at a thickness thinner than the thickness of the light emitting element 400 and can function as an illumination plate or a fluorescent plate on the light emitting element 400. [

A plate cover 360 may be disposed on the optical plate 300. The plate cover 360 may extend outside the upper surface and the side surface of the optical plate 300 and outside the light emitting device 400, It is possible to reflect the light leaked to the side surface of the optical plate 300.

32 is a side sectional view showing a lighting device according to the fifth embodiment.

Referring to FIG. 32, an illumination device includes a light emitting device 500 and an optical plate 300 disposed on the light emitting device 500. The optical plate 300 will be described with reference to the description of the embodiment.

The light emitting device 500 includes a body 510, a first lead frame 521 and a second lead frame 523 disposed on the body 510 and a second lead frame 523 disposed on the body 510, A light emitting chip 570 electrically connected to the frame 521 and the second lead frame 523 and a molding member 531 on the light emitting chip 570.

The body 510 may include a reflecting portion 513 having a concave portion 517 opened at an upper portion thereof and a supporting portion 511 for supporting the reflecting portion 513.

The light emitting chip 570 is disposed on the second lead frame 523 and the wire 503 is disposed on the second lead frame 523. The light emitting chip 570 is disposed in the concave portion 517 of the body 510, To the first lead frame 521, as shown in FIG. The second lead frame 523 may have a recessed cavity, and the light emitting chip 570 may be disposed in the cavity. However, the present invention is not limited thereto. The first lead frame 521 and the second lead frame 523 are electrically separated from each other and provide power to the light emitting chip 570.

A step structure 43 is disposed on the outer side of the body 510. The step structure 43 may be disposed on the upper outer periphery of the reflecting portion 513 of the body 410. The side cover portion 361 of the plate cover 360 is extended to the step structure 43 and the side cover portion 361 may reflect light leaked through the side surface of the optical plate 360.

The first lead frame 521 and the second lead frame 523 may reflect light generated from the light emitting chip 570 to increase light efficiency. For this purpose, a separate reflective layer may be formed on the first lead frame 521 and the second lead frame 523, but the present invention is not limited thereto. In addition, the first and second lead frames 521 and 523 may serve to discharge the heat generated from the light emitting chip 570 to the outside. The lid portion 522 of the first lead frame 521 and the lid portion 524 of the second lead frame 523 may be disposed on the lower surface of the body 510. [

The molding member 531 may include a resin material such as silicone or epoxy, and may surround the light emitting chip 570 to protect the light emitting chip 570. The upper surface of the molding member 531 may be flat, concave or convex. The molding member 531 may be removed so that the recessed portion 517 may be filled with the air region.

The optical plate 300 may be disposed facing the light emitting chip 570. The optical plate 300 includes a phosphor and may be disposed on the upper surface of the body 510.

The optical plate 300 includes a frame-shaped support 310 having an open region 342, a phosphor layer 340, a support 310, and a phosphor layer 340 in the support 310, A second transparent film 330 on the support 320, the support 310, and the phosphor layer 340.

The support 310 includes an open region 342 therein, and the outer shape may include a circular or polygonal frame shape. The open region 342 may include a circular or polygonal shape. The open region 342 has a shape corresponding to the shape of the concave portion 517 of the light emitting device, and light emitted through the concave portion 517 may be incident thereon. The support 310 may be formed to surround the side surface of the phosphor layer 340.

The support 310 may include a reflective material or a light-transmitting material. The support 310 may include a glass material such as white glass or a glass material having a high reflectance. The white glass or the glass material having high reflectance can be formed by adding white particles and / or bubbles into the transparent glass. The reflectance of the support 310 may be higher than that of the first and second transparent films 320 and 330.

As another example, the support 310 may include a resin material, and the resin material may include a resin material such as polyphthalamide (PPA), an epoxy or a silicone material. A filler, which is a metal oxide such as TiO ₂ or SiO ₂ , may be added to the resin material. The support 310 may be made of a white resin. The support 310 may include a ceramic material.

The support 310 may be made of a transparent material such as glass or transparent silicone or epoxy.

The phosphor layer 340 may include a phosphor in a resin material such as transparent silicon or epoxy. The phosphor layer 340 converts the wavelength of the light emitted from the light emitting chip 570. The phosphor layer 340 may include at least one of red, green, yellow, and blue phosphors. The phosphor excites a part of the emitted light and emits it as light of a different wavelength. The phosphor may be selectively formed from YAG, TAG, Silicate, Nitride, and Oxy-nitride based materials. The phosphor may include at least one of a red phosphor, a yellow phosphor, and a green phosphor.

The phosphor layer 340 according to an embodiment may include a quantum dot. The quantum dot may include an II-VI compound or a III-V compound semiconductor, and may emit at least one of red, green, yellow, and red quantum dots.

The quantum dot is, for example, ZnS, ZnSe, ZnTe, CdS , CdSe, CdTe, GaN, GaP, GaAs, GaSb, InP, InAs, In, Sb, AlS, AlP, AlAs, PbS, PbSe, Ge, Si, CuInS 2, CuInSe _2, and the like, and combinations thereof. In the case of such a quantum dot, since the change in the luminous efficiency depending on the temperature is large, the luminous efficiency can be reduced by separating the luminous efficiency from the luminous chip 570 as in the embodiment.

The first and second transparent films 320 and 330 may include glass or a transparent resin film. The first and second transparent films 320 and 330 are bonded to the support 310 to protect the phosphor layer 340. The first and second transparent films 320 and 330 may be formed of a material having a refractive index equal to or lower than that of the molding member 531 and / or the phosphor layer 340. The first and second transparent films 320 and 330 may be formed of a material having a difference in refractive index of the molding member 531 of 0.2 or less.

The first transparent film 320 may be adhered to the lower surface of the support 310 and the lower surface of the phosphor layer 340. The outer surface of the lower surface of the first transparent film 320 may be adhered to the body 510. The second transparent film 330 may be adhered to the upper surface of the support 310 and the upper surface of the phosphor layer 340.

The phosphor layer 340 may have a thickness equal to the thickness of the support 310. In this case, the first and second transparent films 320 and 330 may be formed on the upper and lower surfaces of the support 310, Can be contacted. The lower surface of the support 310 may be attached to the upper surface of the body 510 of the light emitting device 500 and may be disposed around the first transparent film 320. The lower surface of the optical plate 300 may be adhered on the molding member 440. The lower surface of the first transparent film 320 may be adhered to the surface of the molding member 440.

The optical plate 300 according to the embodiment is provided at a thickness thinner than the thickness of the light emitting element 500 and can function as an illumination plate or a fluorescent plate on the light emitting element 500. [

A plate cover 360 may be disposed on the optical plate 300. The plate cover 360 may extend outside the upper surface and the side surface of the optical plate 300 and outside the light emitting device 500, It is possible to reflect the light leaked to the side surface of the optical plate 300.

33 to 36 are top views for explaining the arrangement form and size of the light emitting chip of the light emitting device disposed under the optical plate according to the embodiment. 33 to 36 may be applied to the above-described plate cover, but the present invention is not limited thereto.

33 to 36, the light emitting device has a structure in which cavities 125 and 135 are provided under the concave portion 160 as shown in FIG. 2, and a light emitting chip having a predetermined gap G3 disposed in the cavities 125 and 135, And the optical plate 300 is disposed on the light emitting device. FIG. 34 shows a structure in which the light emitting chips 171 and 172 are disposed in the concave portion 160 of the light emitting device 100A as shown in FIG. 35 and 16 show a case in which the light emitting chip having a large area is arranged without the cavities 125 and 135 as shown in Fig. 2 in the concave portion 160 of the light emitting device 100B. The size (E1 x E2) of the light emitting chip of the light emitting device 100 of Fig. 33 is, for example, in the range of 700 mu m to 1200 mu m x 300 mu m to 600 mu m, and the size (E1 x E2) of the light emitting chips 171, . The size (E1 x E2) of the light emitting chip 170 in Fig. 35 is, for example, in the range of 3500 mu m to 5000 mu m x 500 mu m to 800 mu m, and the size (E1 x E2) For example, from 3500 mu m to 5000 mu m x 700 mu m to 1000 mu m. The luminous efficiency and luminous efficiency of the light emitting device according to the shape of the light emitting device and the size of the light emitting chip are the same as the experimental examples shown in Tables 3 and 4.

Table 3 is a table comparing luminous efficiency and efficiency according to the shape of the light emitting device and the size of the light emitting chip according to the examples and the comparative examples.

Type Comparative Example Example 1 Example 2 Example 3 Example 4 Example 5 Chip size (E1 x E2) (mu m) 1000 × 550 1700 x 600 1500 × 600 1700 x 800 4300 x 600 4300 x 800 Chip Thickness (탆) 100 100 100 100 100 100 Maximum value of luminous intensity (mW / mm ² ) 206.4 59.5 63.8 58.9 54.6 54.1 Relative value relative to peak value of luminous intensity (%) 100.0 28.8 30.9 28.5 26.5 26.2 efficiency(%) 93.7 92.1 92.1 92.1 92.2 92.3

Table 4 shows the luminous intensity and efficiency of the types of Examples 1 to 5 by varying the thickness of the light emitting chip in Table 3. [

type Comparative Example Example 1 Example 2 Example 3 Example 4 Example 5 Chip size (E1 x E2) (mu m) 1000 × 550 1700 x 600 1500 × 600 1700 x 800 4300 x 600 4300 x 800 Chip Thickness (탆) 100 150 150 150 250 250 Maximum value of luminous intensity (mW / mm ² ) 206.4 58.3 62.5 57.6 52.7 49.8 Relative value relative to peak value of luminous intensity (%) 100.0 28.2 30.3 27.9 25.5 24.1 efficiency(%) 93.7 91.1 91.1 91.1 89.7 89.7

In Table 3 and Table 4, the comparative example is a structure in which a molding member having a phosphor is disposed in the light emitting device as shown in Fig. 2, Examples 1 to 3 are the illuminating device disclosed in Fig. 34 or the illuminating device shown in Figs. 18 and 19, Examples 4 and 5 show the illumination device shown in Figs. 35 and 36. Fig. The efficiency is the spinning rate / chip output incident on the first transparent film of the optical plate. As shown in Tables 3 and 4, the light emitting device has less light loss than the comparative example in view of light efficiency, and deterioration of the phosphor can be prevented.

Referring to FIG. 37, a plurality of light emitting chips 170A may be arranged in a matrix form in the light emitting device 100B. More than two light emitting chips 170A may be arranged in series or in parallel. The spacing G4 and G5 of the plurality of light emitting chips 170A may vary depending on the size of the concave portion 160 of the light emitting device 100B. The optical plate 300 can be arranged on the plurality of light emitting chips 170A arranged in this matrix form.

FIG. 38 is a perspective view showing a light source module in which the light source of FIG. 12 is disposed on a circuit board, and FIG. 39 is a perspective view showing a light source module in which the light source of FIG. 12 is arranged on a circuit substrate.

38, the light source module is disposed on the circuit board 600 with the light emitting element 100 having the light emitting element 100 and the optical plate 300 described in the embodiment. Such an illumination device 101 may include, but is not limited to, the plate cover (360 of FIG. 22) disclosed in the embodiment.

Referring to Fig. 39, the light source module is arranged on the circuit board 600 with predetermined intervals of the lighting elements 101 described in the embodiment. Such illumination elements 101 may be arranged in at least one column and / or row, but are not limited thereto. Such an illumination device 101 may include, but is not limited to, the plate cover (360 of FIG. 22) disclosed in the embodiment.

The circuit board 600 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the circuit board 600 may include not only a general PCB but also a metal core PCB (MCPCB), a flexible PCB (FPCB), and the like, but the present invention is not limited thereto.

40 to 42 show an example in which a light emitting chip and an optical plate are arranged on a circuit board as a sixth embodiment.

Referring to FIG. 40, a light emitting chip 170B is disposed on a circuit board 610 of a light source module. An optical plate (described in the embodiment) may be disposed on the light emitting chip 170B. A plate cover may be disposed on the optical plate 300, but the present invention is not limited thereto.

The circuit board 610 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the circuit board 600 may include not only a general PCB but also a metal core PCB (MCPCB), a flexible PCB (FPCB), and the like, but the present invention is not limited thereto.

The light emitting chip 170B may be arranged in a vertical chip in which two electrodes are disposed on opposite sides, a horizontal chip in which two electrodes are arranged adjacent to each other, or a flip chip, but the present invention is not limited thereto.

The gap G2 between the light emitting chip 170B and the optical plate 300 can be disposed within the range disclosed in the embodiment.

A reflective member 630 may be disposed outside the light emitting chip 170B and the reflective member 630 may reflect light emitted from the light emitting chip 170B and block light leakage. The reflective member 630 supports the outer surface of the lower surface of the optical plate 300. The reflective member 630 may overlap the support 310 of the optical plate 300 in the vertical direction. The upper surface 631 of the reflective member 630 may be in contact with at least one of the outer surface of the lower surface of the first transparent film 320 and the support 310.

The reflective member 630 may be made of a white resin material or a resin material having a reflective layer formed on its surface. As the white resin material, an oxide such as a metal oxide such as TiO ₂ , SiO ₂ , Al ₂ O ₃ may be added to silicon or epoxy. The reflecting member 630 may have a top view shape in a circular shape or a polygonal shape.

The space 650 between the circuit board 610 and the optical plate 300 may include an air gap or a transparent molding member. However, the present invention is not limited thereto. The molding member in the reflective member 630 may contact the first transparent film 320 of the optical plate 300

Referring to FIG. 41, a plurality of light emitting chips 170B are disposed on a circuit board 610 of a light source module. The light emitting chips 170B may be spaced apart from each other, and a reflective member 630 may be disposed around the light emitting chips 170B. An optical plate 300 may be disposed on each light emitting chip 170B. A plate cover may be disposed on the optical plate 300, but the present invention is not limited thereto. The space 650 between the circuit board 610 and the optical plate 300 may include an air gap or a transparent molding member. However, the present invention is not limited thereto.

42, a plurality of light emitting chips 170B may be disposed on a circuit board 610 of the light source module, and two or more light emitting chips 170B may be arranged in series or in parallel with each other Can be connected. The optical plate 300 according to the embodiment may be disposed on the plurality of light emitting chips 170B. A plurality of illumination regions having the plurality of light emitting chips 170B and the optical plate 300 may be disposed on the circuit board 610, but the present invention is not limited thereto.

The gap G2 between the optical plate 300 and the light emitting chip 170B may be disposed within the range disclosed in the embodiment. A plate cover may be disposed on the optical plate 300, but the present invention is not limited thereto.

A reflective member 630 may be disposed outside the plurality of light emitting chips 170B. The reflective member 630 reflects light and supports the optical plate 300.

The space 650 between the circuit board 610 and the optical plate 300 may include an air gap or a transparent molding member. However, the present invention is not limited thereto.

43 is an example of a light emitting chip of a light emitting device according to the embodiment.

Referring to FIG. 43, the light emitting chip according to the embodiment includes a first conductive semiconductor layer 63, an active layer 69 disposed on the first conductive semiconductor layer 63, And a second conductivity type semiconductor layer 75 disposed on the electron blocking layer 71. The second conductivity type semiconductor layer 75 may be formed on the electron blocking layer 71,

The light emitting chip may include at least one or both of the buffer layer 61 and the substrate 51 under the first conductive semiconductor layer 63. The light emitting chip includes a first clad layer 65 between the first conductive type semiconductor layer 63 and the active layer 69 and a second clad layer 65 between the active layer 69 and the second conductive type semiconductor layer 75. [ (Not shown), or both.

The substrate 51 may be, for example, a translucent, conductive substrate or an insulating substrate. For example, the substrate 51 may include at least one of sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, and Ga ₂ O ₃ . A plurality of protrusions (not shown) may be formed on the upper surface and / or the lower surface of the substrate 51, and each of the plurality of protrusions may include at least one of a side surface, a hemispherical shape, a polygonal shape, And may be arranged in a stripe form or a matrix form. The protrusions can improve the light extraction efficiency.

A plurality of compound semiconductor layers may be disposed on the substrate 51. The plurality of compound semiconductor layers may be grown using an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD) A dual-type thermal evaporator, sputtering, metal organic chemical vapor deposition (MOCVD), or the like. However, the present invention is not limited thereto.

The buffer layer 61 may be disposed between the substrate 51 and the first conductive semiconductor layer 63. The buffer layer 61 may be formed of at least one layer using Group II to VI compound semiconductors. The buffer layer 61 includes a semiconductor layer using a Group III-V compound semiconductor, for example, In _x Al _y Ga _1-xy N (0? _X? 1, 0? Y? 1, 0? _X + y Lt; = 1). The buffer layer 61 includes at least one of materials such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and ZnO.

The buffer layer 61 may include a superlattice structure in which different semiconductor layers are alternately arranged. The buffer layer 61 may be formed to mitigate the difference in lattice constant between the substrate 51 and the nitride-based semiconductor layer, and may be defined as a defect control layer. The lattice constant of the buffer layer 61 may have a value between lattice constants between the substrate 51 and the nitride-based semiconductor layer.

The buffer layer 61 may include an undoped semiconductor layer, and the undoped semiconductor layer may have lower electrical conductivity than the first conductive semiconductor layer 63. The undoped semiconductor layer has intrinsic first conductivity type characteristics even if it is not doped with a conductive dopant. The buffer layer 61 may be formed as a single layer or a multilayer.

The first conductive semiconductor layer 63 may be disposed between the active layer 69 and at least one of the substrate 51 and the buffer layer 61. The first conductive semiconductor layer 63 may be formed of at least one of Group III-V and Group II-VI compound semiconductors doped with a first conductivity type dopant.

The first conductive semiconductor layer 63 is formed of a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + . The first conductive semiconductor layer 63 may include at least one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP. The first conductive semiconductor layer 63 may be an n-type semiconductor layer doped with an n-type dopant such as Si, Ge, Sn, Se, or Te.

The first conductive semiconductor layer 63 may be a single layer or a multilayer. The first conductive semiconductor layer 63 may have a superlattice structure in which at least two different layers are alternately arranged. The first conductive semiconductor layer 63 may be an electrode contact layer.

The first clad layer 65 may include at least one of Group II-VI and Group III-V compound semiconductors. The first cladding layer 65 may be an n-type semiconductor layer having a dopant of the first conductivity type, for example, an n-type dopant. The first clad layer 65 may include at least one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, May be an n-type semiconductor layer doped with an n-type dopant. The first clad layer 65 may be a single layer or a multi-layer structure. The first clad layer 65 may not be formed, but the present invention is not limited thereto.

The active layer 69 may be formed of at least one of a single well, a single quantum well, a multi-well, a multi quantum well (MQW), a quantum-wire structure, or a quantum dot structure .

The active layer 69 may include a carrier injected through the first conductive semiconductor layer 63 and a carrier injected through the second conductive semiconductor layer 75 such as a hole Are mutually opposed to each other and emit light according to a band gap difference of an energy band according to a material of the active layer 69. [

The active layer 69 may be formed of a compound semiconductor. The active layer 69 may be formed of at least one of Group II-VI and Group III-V compound semiconductors, for example.

When the active layer 69 is implemented as a multi-well structure, the active layer 69 includes a plurality of well layers and a plurality of barrier layers. The active layer 69 has a well layer and a barrier layer alternately arranged. The pair of the well layer and the barrier layer may be formed in 2 to 30 cycles. InGaN / AlGaN, InGaN / AlGaN, InGaN / InGaN, AlGaAs / GaAs, InGaAs / GaAs, InGaP / GaP, AlInGaP / InGaP, or InGaN / AlGaN. InP / GaAs < / RTI > pair. The active layer 69 may emit at least one peak wavelength of ultraviolet, blue, green, and red wavelengths.

The electron blocking layer 71 is disposed on the active layer 69. The electron blocking layer 71 may include an AlGaN-based semiconductor. The electron blocking layer 71 may be a p-type semiconductor layer having a second conductivity type dopant, for example, a p-type dopant. The electron blocking layer 71 may include at least one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, Lt; RTI ID = 0.0 > p-type < / RTI >

The second conductivity type semiconductor layer 75 may be disposed on the electron blocking layer 71. The second conductivity type semiconductor layer 75 is a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + . The second conductive semiconductor layer 75 may include at least one of, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, May be a doped p-type semiconductor layer.

The second conductivity type semiconductor layer 75 may be a single layer or a multilayer. The second conductive semiconductor layer 75 may have a superlattice structure in which at least two different layers are alternately arranged. The second conductive semiconductor layer 75 may be an electrode contact layer.

The light emitting structure may include the first conductivity type semiconductor layer 63 to the second conductivity type semiconductor layer 75. As another example, in the light emitting structure, the p-type semiconductor layer, the first cladding layer 73, and the second conductivity type semiconductor layer 75 may be formed of n Type semiconductor layer. Such a light emitting structure may be implemented by any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.

The first electrode 91 may be electrically connected to the first conductive semiconductor layer 63 and the second electrode 95 may be electrically connected to the second conductive semiconductor layer 75. The first electrode 91 may be disposed on the first conductive semiconductor layer 63 and the second electrode 95 may be disposed on the second conductive semiconductor layer 75.

The first electrode 91 and the second electrode 95 may have a current diffusion pattern having an arm structure or a finger structure. The first electrode 91 and the second electrode 95 may be made of a metal having properties of an ohmic contact, an adhesive layer, and a bonding layer, and may not be transparent. The first electrode 93 and the second electrode 95 are formed of a material selected from the group consisting of Ti, Ru, Rh, Ir, Mg, Zn, Al, In, Ta, Pd, Co, Ni, Si, Alloys.

An electrode layer 93 may be disposed between the second electrode 95 and the second conductive semiconductor layer 75. The electrode layer 93 may be a light transmissive material that transmits light of 70% And may be formed of a metal or a metal oxide, for example. The electrode layer 93 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide ), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), ZnO, IrOx, RuOx, NiO, Al, Ag, Pd, Rh, Pt and Ir.

An insulating layer 81 may be disposed on the electrode layer 93. The insulating layer 81 may be disposed on the upper surface of the electrode layer 93 and the side surface of the semiconductor layer and may be selectively in contact with the first and second electrodes 91 and 95. The insulating layer 81 includes an insulating material or an insulating resin formed of at least one of oxides, nitrides, fluorides, and sulfides having at least one of Al, Cr, Si, Ti, Zn and Zr. The insulating layer 81 may be selectively formed of, for example, SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , or TiO ₂ . The insulating layer 81 may be formed as a single layer or a multilayer, but is not limited thereto.

FIG. 44 is another example of the light emitting chip of the light emitting device according to the embodiment, and may be a vertical light emitting chip using the light emitting chip of FIG. In describing FIG. 44, the same portions as those described above will be described with reference to the description of the embodiments disclosed above.

44, a light emitting chip according to an embodiment includes a first electrode 91 and a plurality of conductive layers 96, 97, and a second conductive semiconductor layer 75 under the first conductive semiconductor layer 63, 98, 99).

The second electrode is disposed under the second conductive semiconductor layer 75 and includes a contact layer 96, a reflective layer 97, a bonding layer 98, and a support member 99. The contact layer 96 is in contact with the semiconductor layer, for example, the second conductivity type semiconductor layer 75. The contact layer 96 may be made of a conductive material such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, or Ni or Ag. A reflective layer 97 is disposed under the contact layer 96 and the reflective layer 97 is formed of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, And at least one layer made of a material selected from the group. The reflective layer 97 may be in contact with the second conductive semiconductor layer 75, but the present invention is not limited thereto.

A bonding layer 98 is disposed under the reflective layer 97 and the bonding layer 98 may be used as a barrier metal or a bonding metal. The material may be, for example, Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, and Ta and an optional alloy.

A channel layer 83 and a current blocking layer 85 are disposed between the second conductive type semiconductor layer 75 and the second electrode. The channel layer 83 is formed along the bottom edge of the second conductive semiconductor layer 75, and may be formed in a ring shape, a loop shape, or a frame shape. The channel layer 83 comprises a transparent conductive material or an insulating material, such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, SiO _2, SiO _x, SiO _x N _y, Si ₃ N _4, Al ₂ O ₃ , and TiO ₂ . The inner side of the channel layer 83 is disposed below the second conductivity type semiconductor layer 75 and the outer side is disposed further outward than the side surface of the light emitting structure.

The current blocking layer 85 may be disposed between the second conductive semiconductor layer 75 and the contact layer 96 or the reflective layer 97. The current blocking layer 85 may include at least one of SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ and TiO ₂ . As another example, the current blocking layer 85 may also be formed of a metal for Schottky contact.

The current blocking layer 85 is disposed to correspond to the first electrode 91 disposed on the light emitting structure and the thickness direction of the light emitting structure. The current blocking layer 85 may cut off the current supplied from the second electrodes 96, 97, 98, and 99 and diffuse the current to other paths. The current blocking layer 85 may be disposed in one or a plurality of regions, and at least a part of the current blocking layer 85 may overlap the first electrode 91 in the vertical direction.

A support member 99 is formed under the bonding layer 98 and the support member 99 may be formed of a conductive material such as copper-copper, gold-gold, nickel (Ni-nickel), molybdenum (Mo), copper-tungsten (Cu-W), and carrier wafers (e.g., Si, Ge, GaAs, ZnO, SiC and the like). As another example, the support member 99 may be embodied as a conductive sheet.

Here, the substrate of FIG. 43 can be removed. The substrate may be removed by a physical method such as laser lift off or chemical method such as wet etching to expose the first conductivity type semiconductor layer 63. The first electrode 91 is formed on the first conductive type semiconductor layer 63 by performing the isolation etching through the direction in which the substrate is removed.

The upper surface of the first conductive semiconductor layer 63 may be formed with a light extraction structure (not shown) such as a roughness. An insulating layer (not shown) may be further disposed on the surface of the semiconductor layer, but the present invention is not limited thereto. Thus, the light emitting chip 102 having a vertical electrode structure having the first electrode 91 and the supporting member 99 under the light emitting structure can be manufactured.

An illumination device or a light emitting device (hereinafter referred to as an illumination device) according to the embodiment can be applied to an illumination system. The lighting system includes a structure in which a plurality of lighting elements are arrayed, and includes a display device shown in Figs. 45 and 46, a lighting device shown in Fig. 47, and may include an illumination lamp, a traffic light, a vehicle headlight, have.

45 is an exploded perspective view of a display device having an illumination device according to an embodiment.

45, a display device 1000 according to an embodiment includes a light guide plate 1041, a light source module 1031 for providing light to the light guide plate 1041, and a reflection member 1022 An optical sheet 1051 on the light guide plate 1041 and a display panel 1061 on the optical sheet 1051 and the light guide plate 1041, the light source module 1031, and the reflection member 1022 But is not limited to, a bottom cover 1011.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 serves to diffuse light into a surface light source. The light guide plate 1041 may be made of a transparent material, for example, acrylic resin such as PMMA (polymethylmethacrylate), polyethylene terephthalate (PET), polycarbonate (PC), cycloolefin copolymer (COC) and polyethylene naphtha late Resin. ≪ / RTI >

The light source module 1031 provides light to at least one side of the light guide plate 1041, and ultimately acts as a light source of the display device.

At least one light source module 1031 is disposed in the bottom cover 1011 and may directly or indirectly provide light from one side of the light guide plate 1041. [ The light source module 1031 includes a circuit board 1033 and an illumination device 1035 according to the embodiment described above and the illumination device 1035 can be arranged on the circuit board 1033 at a predetermined interval have.

The circuit board 1033 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the circuit board 1033 may include not only a general PCB but also a metal core PCB (MCPCB), a flexible PCB (FPCB), and the like, but the present invention is not limited thereto. When the lighting device 1035 is mounted on the side surface of the bottom cover 1011 or on the heat radiation plate, the circuit board 1033 can be removed. Here, a part of the heat radiating plate may be in contact with the upper surface of the bottom cover 1011.

The illumination device 1035 may be mounted on the circuit board 1033 such that the light exit surface is spaced apart from the light guide plate 1041 by a predetermined distance, but the present invention is not limited thereto. The illumination device 1035 can directly or indirectly provide light to the light-incident portion, which is one surface of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflection member 1022 reflects the light incident on the lower surface of the light guide plate 1041 so as to face upward, thereby improving the brightness of the light unit 1050. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light source module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, including first and second transparent substrates facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. Such a display device 1000 can be applied to various types of portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet condenses incident light into a display area. The brightness enhancing sheet improves the brightness by reusing the lost light. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

Here, the optical path of the light source module 1031 may include the light guide plate 1041 and the optical sheet 1051 as an optical member, but the invention is not limited thereto.

46 is a view showing a display device having an illumination device according to the embodiment.

46, the display device 1100 includes a bottom cover 1152, a circuit board 1120 on which the illumination device 1124 is arranged, an optical member 1154, and a display panel 1155 .

The circuit board 1120 and the illumination device 1124 may be defined as a light source module 1160. The bottom cover 1152, the at least one light source module 1160, and the optical member 1154 may be defined as a light unit 1150. The bottom cover 1152 may include a receiving portion 1153, but the present invention is not limited thereto. The light source module 1160 includes a circuit board 1120 and a plurality of lighting elements 1124 arranged on the circuit board 1120.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a polymethyl methacrylate (PMMA) material, and the light guide plate may be removed. The diffusion sheet diffuses incident light, and the horizontal and vertical prism sheets condense incident light into a display area. The brightness enhancing sheet enhances brightness by reusing the lost light.

The optical member 1154 is disposed on the light source module 1160 and performs surface light source, diffusion, and light condensation of light emitted from the light source module 1160.

47 is an exploded perspective view of a lighting device having a lighting device according to the embodiment.

47, the lighting apparatus according to the embodiment includes a cover 2100, a light source module 2200, a heat discharger 2400, a power supply unit 2600, an inner case 2700, and a socket 2800 . Further, the illumination device according to the embodiment may further include at least one of the member 2300 and the holder 2500. The light source module 2200 may include a lighting device according to an embodiment.

For example, the cover 2100 may have a shape of a bulb or a hemisphere, and may be provided in a shape in which the hollow is hollow and a part is opened. The cover 2100 may be optically coupled to the light source module 2200. For example, the cover 2100 may diffuse, scatter, or excite light provided from the light source module 2200. The cover 2100 may be a kind of optical member. The cover 2100 may be coupled to the heat discharging body 2400. The cover 2100 may have an engaging portion that engages with the heat discharging body 2400.

The inner surface of the cover 2100 may be coated with a milky white paint. Milky white paints may contain a diffusing agent to diffuse light. The surface roughness of the inner surface of the cover 2100 may be larger than the surface roughness of the outer surface of the cover 2100. This is for sufficiently diffusing and diffusing the light from the light source module 2200 and emitting it to the outside.

The cover 2100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 2100 may be transparent so that the light source module 2200 is visible from the outside, and may be opaque. The cover 2100 may be formed by blow molding.

The light source module 2200 may be disposed on one side of the heat discharging body 2400. Accordingly, heat from the light source module 2200 is conducted to the heat discharger 2400. The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250.

The member 2300 is disposed on the upper surface of the heat discharging body 2400 and has guide grooves 2310 through which the plurality of light source portions 2210 and the connector 2250 are inserted. The guide groove 2310 corresponds to the circuit board of the light source unit 2210 and the connector 2250.

The surface of the member 2300 may be coated or coated with a light reflecting material. For example, the surface of the member 2300 may be coated or coated with a white paint. The member 2300 reflects the light reflected by the inner surface of the cover 2100 toward the cover 2100 in the direction toward the light source module 2200. Therefore, the light efficiency of the illumination device according to the embodiment can be improved.

The member 2300 may be made of an insulating material, for example. The connection plate 2230 of the light source module 2200 may include an electrically conductive material. Therefore, electrical contact can be made between the heat discharging body 2400 and the connecting plate 2230. The member 2300 may be formed of an insulating material to prevent an electrical short circuit between the connection plate 2230 and the heat discharging body 2400. The heat discharger 2400 receives heat from the light source module 2200 and heat from the power supply unit 2600 to dissipate heat.

The holder 2500 blocks the receiving groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 housed in the insulating portion 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510. The guide protrusion 2510 may have a hole through which the protrusion 2610 of the power supply unit 2600 passes.

The power supply unit 2600 processes or converts an electrical signal provided from the outside and provides the electrical signal to the light source module 2200. The power supply unit 2600 is housed in the receiving groove 2719 of the inner case 2700 and is sealed inside the inner case 2700 by the holder 2500.

The power supply unit 2600 may include a protrusion 2610, a guide unit 2630, a base 2650, and a protrusion 2670.

The guide portion 2630 has a shape protruding outward from one side of the base 2650. The guide portion 2630 may be inserted into the holder 2500. A plurality of components may be disposed on one side of the base 2650. The plurality of components include, for example, a DC converter for converting AC power supplied from an external power source into DC power, a driving chip for controlling driving of the light source module 2200, an ESD (Electro Static discharge) protection device, but the present invention is not limited thereto.

The protrusion 2670 has a shape protruding outward from the other side of the base 2650. The protrusion 2670 is inserted into the connection portion 2750 of the inner case 2700 and receives an external electrical signal. For example, the protrusion 2670 may be equal to or smaller than the width of the connection portion 2750 of the inner case 2700. One end of each of the positive wire and the negative wire is electrically connected to the protrusion 2670 and the other end of the positive wire and the negative wire are electrically connected to the socket 2800.

The inner case 2700 may include a molding part together with the power supply part 2600. The molding part is a hardened portion of the molding liquid so that the power supply unit 2600 can be fixed inside the inner case 2700.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Will be clear to those who have knowledge of. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

100, 100A, 400, 500: light emitting element
101: Lighting element
110, 110A, 410, 510: body
121, 131, 122, 132, 421, 423, 521, 523:
125, 135: Cavity
160, 425, 517:
170, 170A, 170B, 171, 172, 470, 570:
181, 440, 531:
300: optical plate
310: Support
320,330: Transparent film
340: phosphor layer
351: Semi-transparent mirror

Claims (19)

A body having a concave portion, a plurality of lead frames arranged in a concave portion of the body, a light emitting chip on at least one of the plurality of lead frames, And a light emitting element having a molding member in the concave portion; And
And an optical plate disposed on the light emitting element,
Wherein the optical plate comprises:
A phosphor layer disposed on the concave portion,
A support disposed around the outer periphery of the phosphor layer, and
And a first transparent film disposed below the phosphor layer and the support,
Wherein the first transparent film of the optical plate is disposed between the molding member and the phosphor layer and contacts the molding member. The method according to claim 1,
And a second transparent film disposed on the phosphor layer and the support. The method according to claim 1,
Wherein the plurality of lead frames are arranged such that an upper surface thereof is flat on the bottom of the concave portion. 4. The method according to any one of claims 1 to 3,
And the light emitting chip is disposed on each of the plurality of lead frames. 4. The method according to any one of claims 1 to 3,
Wherein at least one of the support and the first transparent film is in contact with the body of the light emitting element. 4. The method according to any one of claims 1 to 3,
Wherein an interval between the first transparent film of the optical plate and the light emitting chip is 1 mm or less. The method according to claim 6,
Wherein an interval between the phosphor layer of the optical plate and the light emitting chip is 0.7 mm or less. 4. The method according to any one of claims 1 to 3,
And a plate cover disposed on an upper surface and a lateral surface of the optical plate. 9. The method of claim 8,
Wherein the plate cover includes a top cover portion having an opening on the phosphor layer and disposed outside the top surface of the optical plate, and a side cover portion disposed on a side surface of the optical plate. 10. The method of claim 9,
And the side cover portion of the plate cover extends to the outside of the body. 11. The method of claim 10,
Wherein a side surface portion of the body includes a step structure having a lower depth than an upper surface of the body,
And the side cover portion of the plate cover extends to the step structure. 12. The method of claim 11,
The plate cover is made of a metal material,
Wherein the first transparent film is made of glass. 4. The method according to any one of claims 1 to 3,
Wherein the support comprises a light-transmitting material or a reflective material. 4. The method according to any one of claims 1 to 3,
And a semi-transmissive mirror that reflects and transmits light incident on a region facing the light emitting chip, out of a region between the optical plate and the molding member,
Wherein the translucent mirror has a bottom area smaller than a bottom area of the phosphor layer. 4. The method according to any one of claims 1 to 3,
Wherein the support has a thickness equal to the thickness of the phosphor layer. A circuit board; And
And a lighting device on the circuit board,
The light source module according to any one of claims 1 to 3, A circuit board; And
A light emitting chip disposed on the circuit board;
A reflective member disposed around the light emitting chip;
And an optical plate disposed on the light emitting chip and supported by the reflecting member,
Wherein the optical plate comprises:
A phosphor layer disposed on the light emitting chip,
A support disposed around the outer periphery of the phosphor layer,
A first transparent film disposed below the phosphor layer and the support; And
And a second transparent film disposed on the phosphor layer and the support. 18. The method of claim 17,
And a molding member in the reflective member,
And the molding member is in contact with the first transparent film. 18. The method of claim 17,
And a plate cover disposed on the upper and outer sides of the optical plate.

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