KR101916148B1 - Light emitting device, manufactured method of the light emitting device and lighting system - Google Patents

Abstract

A light emitting device according to an embodiment includes: a body having a cavity; A first lead frame disposed at the bottom of the cavity; A second lead frame disposed at the bottom of the cavity; A third lead frame disposed between the first and second lead frames; A reflective layer formed of a material of the body on the first to third lead frames disposed in the cavity bottom; A first light emitting chip disposed on the first lead frame; And a second light emitting chip disposed on the second lead frame; A first wire connected to the first light emitting chip and the third lead frame; A second wire connected to the second light emitting chip and the third lead frame; The cavity includes a molding member, and the third lead frame includes a protrusion protruding from an upper surface of the first and second lead frames, the area to which the first and second wires are connected.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device,

The present invention relates to a light emitting element, a method of manufacturing a light emitting element, and a lighting apparatus.

BACKGROUND ART A light emitting device, for example, a light emitting device (Light Emitting Device) is a type of semiconductor device that converts electrical energy into light, and has been widely recognized as a next generation light source in place of existing fluorescent lamps and incandescent lamps.

Since the light emitting diode generates light by using a semiconductor device, the light emitting diode consumes very low power as compared with an incandescent lamp that generates light by heating tungsten or a fluorescent lamp that generates ultraviolet rays generated by high-pressure discharge .

In addition, since the light emitting diode generates light using the potential gap of the semiconductor device, it has a longer lifetime, faster response characteristics, and an environment-friendly characteristic as compared with the conventional light source.

Accordingly, much research has been conducted to replace an existing light source with a light emitting diode. The light emitting diode has been increasingly used as a light source for various lamps used in indoor and outdoor, lighting devices such as a liquid crystal display, have.

The embodiment provides a light emitting device having a new structure.

Embodiments provide a light emitting device in which a reflective layer of the same material as the body is disposed on the bottom of a cavity of a body.

The embodiment provides a light emitting device in which a reflective layer made of silicon or epoxy is disposed on a lead frame disposed in a cavity.

Embodiments provide a light emitting device having a plurality of openings for bonding light emitting chips and wires among the reflective layer regions of the cavity bottom.

The embodiment provides a light emitting device in which a frame region where wires are bonded is disposed higher than a frame region disposed under the light emitting chip.

A light emitting device according to an embodiment includes: a body having a cavity; A first lead frame disposed at the bottom of the cavity; A second lead frame disposed at the bottom of the cavity; A third lead frame disposed between the first and second lead frames; A reflective layer formed of a material of the body on the first to third lead frames disposed in the cavity bottom; A first light emitting chip disposed on the first lead frame; And a second light emitting chip disposed on the second lead frame; A first wire connected to the first light emitting chip and the third lead frame; A second wire connected to the second light emitting chip and the third lead frame; The cavity includes a molding member, and the third lead frame includes a protrusion protruding from an upper surface of the first and second lead frames, the area to which the first and second wires are connected.

The illumination system according to the embodiment includes the light emitting element described above.

The embodiment can increase the amount of light in the light emitting element.

The embodiment can reduce the light loss in the light emitting element.

The embodiment can improve the light efficiency in the light emitting element and improve the reliability.

The embodiment has the effect of improving the stress of the wire connected to the light emitting chip and preventing the open failure of the wire.

Embodiments can improve the reliability of a light emitting device and an illumination system having the same.

1 is a perspective view of a light emitting device according to a first embodiment.
2 is a plan view of the lead frames of the light emitting device of FIG.
3 is a plan view of the light emitting device of FIG.
4 is a view showing an opening of a reflective layer in the light emitting device of Fig.
5 is a cross-sectional view of the light-emitting device of FIG. 3 taken along the line AA.
6 is a partially enlarged view of the light emitting device of Fig.
7 is a perspective view of a light emitting device according to a second embodiment.
8 is a plan view showing lead frames of the light emitting device of FIG.
9 is a side sectional view of the light emitting device of Fig.
10 is a side sectional view showing a light emitting device according to the third embodiment.
11 is a diagram showing the light efficiency according to the thickness of the reflective layer in the light emitting device of the embodiment.
12 is a graph showing the light efficiency according to the interval between the reflective layer and the light emitting chip in the light emitting device of the second and third embodiments.
13 is a view showing the fatigue stress of the wire according to the embodiment.
14 is a view illustrating an example of a light emitting chip of a light emitting device according to an embodiment.
15 is a view showing another example of the light emitting chip of the light emitting device according to the embodiment.
16 is a perspective view showing a display device having a light emitting element according to an embodiment.
17 is a perspective view showing a display device having a light emitting element according to an embodiment.
18 is a view showing a lighting apparatus according to an embodiment.

In the description of the embodiments, each substrate, frame, sheet, layer or pattern is formed "on" or "under" each substrate, frame, sheet, Quot; on "and" under "include both being formed" directly "or" indirectly " . In addition, the upper or lower reference of each component is described with reference to the drawings. The size of each component in the drawings may be exaggerated for the sake of explanation and does not mean the size actually applied.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. In the drawings, dimensions are exaggerated, omitted, or schematically illustrated for convenience and clarity of illustration. Also, the size of each component does not entirely reflect the actual size. The same reference numerals denote the same elements throughout the description of the drawings.

Hereinafter, a light emitting device according to an embodiment will be described with reference to the accompanying drawings.

FIG. 1 is a perspective view of a light emitting device according to a first embodiment, FIG. 2 is a plan view of lead frames of the light emitting device of FIG. 1, FIGS. 3 and 4 are plan views of the light emitting device of FIG. 1, FIG. 6 is a partial enlarged view of the light emitting device of FIG. 5; FIG.

1 to 5, the light emitting device 100 includes a body 10 having a cavity 15 and a reflection layer 51 on the bottom of the cavity, a plurality of lead frames 21, 31 and 41, Wires 73 and 76, and a molding member 91,

The body 10 may include an insulating material or a conductive material. The body 10 may be formed of a resin material such as polyphthalamide (PPA), polycyclohexylene terephthalate (PCT), silicon (Si), a metal material, a PSG (Al ₂ O ₃ ), and a printed circuit board (PCB). For example, the body 10 may be made of a resin material such as epoxy or silicon, which can be manufactured by injection molding a light emitting device by a transfer molding method. In addition, when the body is formed of a material such as PPA and PCT, it can not be manufactured by the transfer molding method, and thus it is difficult to mass-produce it.

The body 10 includes an epoxy molding compound material having epoxy, and the EMC material is improved in moldability, moisture resistance, adhesiveness, and is an insulating material. In the body 10, a filler, which is a metal oxide such as TiO ₂ or SiO ₂ , may be added to improve the reflection efficiency. The content of the filler may be in the range of 80-85 wt%, for example, in the range of 50 wt% or more, for example, 70 wt% or more.

The shape of the body 10 may be a polygonal structure such as a triangle, a rectangle, or a pentagon, or may be formed in a shape having a circular or curved surface.

As shown in FIGS. 1, 5 and 6, the body 10 includes a cavity 15 having a predetermined depth H1 and an open top and including a side surface 16 and a bottom surface. The cavity 15 may be formed in a shape such as a concave cup structure, a recess structure, or a concave structure from the top of the body 10, but is not limited thereto. The shape of the cavity 15 viewed from the top may be a circular shape, an elliptical shape, a polygonal shape (e.g., a square shape), and a polygonal shape with a curved corner. The depth H1 of the cavity 15 is a depth from the upper surface of the body 10 to the upper surface of the reflective layer 51 or the lead frames 21, 31 and 41 and may be 0.4 mm or more, . ≪ / RTI > This allows the light emitting chips 71 and 72 to be disposed on the protrusions and cover the entire bottom surface of the cavity 15 with the reflective layer 51. The centers of the light emitting chips 71 and 72 may be arranged on the same center line on the Y axis.

As shown in FIG. 6, the side surface 16 of the cavity 15 may be inclined at a predetermined angle with respect to the bottom, and the angle may be in the range of 91 to 170 degrees, for example, in a range of 130 to 150 degrees As shown in FIG. In addition, the inclined angles of the long side face and the short side face shorter than the long side face of the side face 16 of the cavity 15 may be the same or different from each other. The side surface 16 of the cavity 15 and the upper surface of the reflective layer 51 may be connected to each other by an angled surface or a curved surface.

The body 10 may include a plurality of side portions, for example, at least four side portions 11-14. At least one of the plurality of side portions 11-14 may be disposed perpendicular or inclined with respect to the lower surface of the body 10. [ For example, when the side portion 11-14 of the body 10 is formed to be inclined, it is easy to separate the frame after the injection molding of the body 10.

The first side surface portion 11 and the second side surface portion 12 are opposed to each other and the third side surface portion 13 and the second side surface portion 12 are opposite to each other. The fourth side portions 14 are opposite to each other. The length of each of the first side surface portion 11 and the second side surface portion 12 may be different from the length of the third side surface portion 13 and the fourth side surface portion 14, The length of the side surface portion 12 may be shorter than the length of the third side surface portion 13 and the fourth side surface portion 14. The length of the first side surface portion 11 or the second side surface portion 12 may be a distance between the third side surface portion 13 and the fourth side surface portion 14. The longitudinal direction of the body 10 is a direction passing through the centers of the first and second light emitting chips 71 and 72 as a first axis Y direction or between the third and fourth side faces 13 and 14 Lt; / RTI > The width direction of the body 10 is a direction of the second axis X and is perpendicular to the first axis direction and may be a width direction of the body 10 or between the first and second side portions 11, Interval.

The length of the body 10 may be at least one time, for example, two times longer than the width. When the length of the body 10 is longer than the width of the body 10, an intermediate frame may be disposed as a structure for preventing the middle portion of the body 10 from being bent or broken during injection molding. Thus, the yield of the light emitting device due to the length of the body 10 can be prevented from lowering.

1 and 3, a reflective layer 51 is disposed on the bottom of the cavity 15, and the reflective layer 51 is formed by injection molding with the body 10 as a material of the body 10. The reflective layer 51 is formed on the bottom surface of the cavity 15 on the lead frames 21, 31 and 41 so that moisture penetration can be suppressed and the light reflection efficiency can be improved through the diffusion characteristics of light.

The plurality of lead frames 21, 31 and 41 may be arranged in two or more, and in the case of three, the first to third lead frames 21, 31 and 41 may be defined. The first lead frame 21 is disposed in the first region of the bottom of the cavity 15 and the first end of the first lead frame 21 is located below the third side portion 13 of the body 10, The third side portion 13 can be more protruded. One or more protrusions 22 may be disposed on the first end of the first lead frame 21 to improve adhesion to the solder. The first lead frame 21 may be provided with one or a plurality of protrusions 23 and 24 under the first and second side faces 11 and 12 and the plurality of protrusions 23 and 24, Can improve the adhesion with the body 10.

The second lead frame 31 is disposed in a second region spaced apart from the first region of the bottom of the cavity 15 and the first end may protrude more than the fourth side portion 14 of the body 10. [ have. A plurality of protrusions 32 may be disposed at the first end of the second lead frame 31 to improve adhesion to the solder. The second lead frame 31 can expose one or a plurality of protrusions 33 and 34 below the first and second side portions 11 and 12 and can prevent the protrusions 33 and 34 Can improve the adhesion with the body 10.

The third lead frame 41 is disposed adjacent to the second side portion 12 among the regions between the first region and the second region at the bottom of the cavity 15. [ The third lead frame 41 may be used as an intermediate connection terminal between the first and second lead frames 21 and 31. The third lead frame 41 may be formed of the same material as the first and second lead frames 21 and 31, but the present invention is not limited thereto.

The third lead frame 41 includes a first support portion 45 disposed at an area between the first and second lead frames 21 and 31 at the bottom of the cavity, And a second support portion 47 and a third support portion 48 which extend to the opposite sides with respect to the support portion 45. Protrusions 49 are exposed to the second side surface portion 12 and grooves 49-1 are formed between the protrusions 49. [ The engagement between the third lead frame 41 and the body 10 can be improved by the projections 49 and the grooves 49-1.

The first and second lead frames 21 and 31 are formed with recesses 21A and 31 having a predetermined depth T2 from the upper surfaces of the first and second lead frames 21 and 31. [ The first recess portion 21A of the first lead frame 21 is formed in the first bottom region of the cavity 15 and the second recess portion 31A of the second lead frame 22 is formed Is formed in the bottom second region of the cavity (15). The bottoms of the first and second recessed portions 21A and 31A are disposed lower than the upper surfaces of the first and second lead frames 21 and 31.

As shown in FIGS. 2, 4 and 5, the first to third projections 27, 28, 27-b projecting from the bottom of the first recess 21A are formed in the region of the first recess 21A. And fourth to sixth protrusions 37, 38, and 37-1 protruding from the bottom of the second recess portion 31A are formed in the second recess portion 31A . The first to sixth protrusions 27, 28, 27-1, 37, 38, 37-1 may protrude into the opening region of the reflective layer 51, And can be disposed on the same plane as the upper surface of the frames 21 and 31. [

The third protrusion 27-1 may be connected to the first protrusion 27 and the sixth protrusion 37-1 may be connected to the fourth protrusion 37 and is not limited thereto.

The third lead frame 41 includes a seventh protrusion 46 disposed in an area between the first and second lead frames 21 and 31. The upper surface of the seventh protrusion 46 is connected to the first To the sixth protrusions 27, 28, 27-1, 37, 38, 37-1. 6, the upper surface of the seventh projection 46 may extend beyond the bottom of the cavity 15 and / or above the first to sixth projections 27, 28, 27-1, 37, 38, 37-1, (B3). The height B3 may protrude from the upper surface of the first and second lead frames 21 and 31 at a height B3 in the range of 140 占 퐉, for example, 140 占 퐉 to 300 占 퐉, for example, have. A gap portion 18 may be disposed under and around the third lead frame 41 and the gap portion 18 may be formed of the material of the reflective layer 10.

2 and 6, the lower surfaces of the first and second lead frames 21 and 31 are exposed on the lower surface of the body 10 and can be mounted on the circuit board. The lower surface of the third lead frame 41 may be exposed on the lower surface of the body 10 or may be separated from the lower surface of the body 10 by a predetermined distance F1.

The thickness T1 of the first to third lead frames 21, 31 and 41 may be the same, for example, in the range of 0.15 mm or more, for example, 0.18 mm-0.35 mm. The first and second lead frames 21 and 31 function as lead terminals for supplying power. The first to third lead frames 21, 31 and 41 are made of a metal material such as titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr) And may include at least one of tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), and phosphorous (P) A layer such as silver (Ag) is formed on the surfaces of the first to third lead frames 21, 31 and 41, thereby maximizing the reflection efficiency.

A gap portion 18 is disposed between the lead frames 21, 31 and 41 and the gap portion 18 separates the lead frames 21, 31 and 41 from each other. The gap portion 18 may be disposed under the reflective layer 51 and may be integrally connected to the reflective layer 51.

The first lead frame 21 and the second lead frame 31 may have stepped ends corresponding to each other, and the stepped structure may increase a contact area with the gap portion 18. [ The gap portion 18 may be formed to have a narrow lower portion and a wider upper portion. On the contrary, the upper portion may be narrower and the lower portion thereof may be formed wider, and the width difference may suppress moisture penetration.

2 and 5, one or more light emitting chips 71 and 72 may be disposed in the cavity 15, for example, a plurality of light emitting chips 71 and 72 may be disposed. The light emitting chips 71 and 72 can selectively emit light in a visible light band to an ultraviolet band and can be selected from a red LED chip, a blue LED chip, a green LED chip, and a yellow green LED chip, for example. have. The first and second light emitting chips 71 and 72 include an LED chip including at least one of a compound semiconductor of group III-V elements and a compound semiconductor of group II-VII elements.

The first light emitting chip 71 is bonded to the first protrusion 27 with a first adhesive member 71-1 and the second light emitting chip 72 is bonded to the second adhesive member 71-1 on the fourth protrusion 37, 72-1.

The first and second adhesive members 71-1 and 72-1 may be an insulating adhesive or a conductive adhesive. The insulating adhesive may include a material such as epoxy or silicone, and the conductive adhesive may include a bonding material such as solder. The first and second adhesive members 71-1 and 72-1 may further include a metal oxide to improve the thermal conductivity, but the present invention is not limited thereto.

2 and 5, the first light emitting chip 71 is connected to the second projecting portion 28 of the first lead frame 21 by the first wire 73, 3 lead frame 41 of the first embodiment. The second projecting portion 28 is disposed between the first light emitting chip 71 and the third side surface portion 13 and the seventh projecting portion 46 is located between the second side surface portion 12 .

The second light emitting chip 72 is connected to the fifth protrusion 38 of the second lead frame 31 by a third wire 75 and the third lead frame 41 is connected by a fourth wire 76. [ To the seventh projection (46) The first through fourth wires 73-76 may be formed of a gold material, but the present invention is not limited thereto. The third lead frame 41 connects the first light emitting chip 71 and the second light emitting chip 72 or connects the first lead frame 21 and the second lead frame 31 to each other. The fifth protrusion 38 is disposed between the second light emitting chip 72 and the fourth side surface 14.

The distance B1 between the light emitting chips 71 and 72 and the third lead frame 41 becomes narrow and the seventh projecting portion 46 of the third lead frame 41 is projected, And the straight line distances B2 and B3 between both ends of the fourth wires 74 and 76 can be made shorter and the height difference can be reduced. Accordingly, since the height difference between the short length and both ends of the second and fourth wires 74 and 76 is reduced, the open failure of the wire connecting the first light emitting chip 71 and the second light emitting chip 72 .

13, the first type (Type 1) in which the seventh protrusion 46 is not present in the third lead frame 41 and the second type (Type 2) in which the seventh protrusion 46 exists are -40 ° C and 100 ° C), it can be seen that the maximum fatigue stress when the seventh protrusion 46 is present is higher than the structure without the seventh protrusion 46 by 20 MPa or more. This difference in fatigue stress can increase the reliability of the second and fourth wires 74 and 76. The embodiment uses the third lead frame 41 and the seventh protrusion 46 which are intermediate connection terminals to increase the fatigue stress of the second and fourth wires 74 and 76 and to improve the reliability of the light emitting element Can be improved.

The protection element 81 may be disposed on a part of the first lead frame 21. The protection element 81 is disposed on the third projection 27-1 of the first lead frame 21 and is connected to the sixth projection 37- 1). The third and sixth protrusions 27-1 and 37-1 are disposed adjacent to the first side portion 11 of the light emitting chips 71 and 72.

The protection element 81 may be adhered to the first lead frame 21 with a conductive adhesive. The protection element 81 may be implemented by at least one of a thyristor, a zener diode, and a TVS (Transient Voltage Suppression). The zener diode protects the light emitting chips 71 and 72 from ESD do. The protection element 81 is connected to the connection circuit of the first light emitting chip 71 and the second light emitting chip 72 in parallel to protect the light emitting chips 71 and 72.

3 and 4, the first and fourth protrusions 27 and 37 may have a polygonal shape, for example, a quadrangular shape or a shape corresponding to the light emitting chips 71 and 72 . The length D1 of the first and fourth protrusions 27 and 37 is longer than the length X2 of the light emitting chips 71 and 72. The width D2 of the light emitting chips 71 and 72, The width Y2 of the protruding portion is larger than the width Y2 of the protruding portion. The area of the first and fourth projections 27 and 37 may be larger than the bottom area of the light emitting chips 71 and 72.

The shape of the second and fifth projections 28 and 38 may be circular or polygonal. The width D3 of the second and fifth projections 28 and 38 may be in the range of 200 탆 or more, for example, 300 탆 to 600 탆.

The seventh protrusion 46 may be formed in any one of a polygonal shape, an elliptical shape, and a circular shape. The length D5 of the seventh protrusion 46 may be in the range of 200 탆 or more, for example, 300 탆 to 600 탆, and the width D4 may be in the range of 300 탆 or more, have. The width D4 of the seventh protrusion 56 may be 1.5 times wider than the width D3.

The third and sixth projections 27-1 and 37-1 may have a polygonal shape or a circular shape, and the width D6 of one side thereof may be formed to be 300 m or more, for example, 300 m to 600 m . The sixth protrusion 37-1 may have the same shape as the third protrusion 27-1, but the present invention is not limited thereto.

The distance D9 between the first and fourth projections 27 and 37 may be wider than the distance D8 between the fifth and sixth projections 27-1 and 37-1, / RTI > to about 1/4 to 1/4 of the thickness of the substrate. The first or fourth protrusions 27 and 37 may be spaced apart from the second or third protrusions 28 and 38 by a distance D7 of 10 mu m or more.

A molding member 91 may be formed in the cavity 15. The molding member 91 includes a light transmitting resin material such as silicon or epoxy, and may be formed as a single layer or a multilayer.

The molding member 91 may include a phosphor for converting the wavelength of light emitted onto the light emitting chips 71 and 72. The phosphor may be a part of light emitted from the light emitting chips 71 and 72 And emits light of a different wavelength. The phosphor may be selectively formed from YAG, TAG, Silicate, Nitride, and Oxy-nitride based materials. The phosphor may include at least one of a red phosphor, a yellow phosphor, and a green phosphor, but the present invention is not limited thereto. The surface of the molding member 91 may be formed in a flat shape, a concave shape, a convex shape, or the like, but is not limited thereto.

The surface of the molding member 91 may be a light exit surface. A lens may be disposed on the molding member 91. The lens may include a convex lens having a convex lens with respect to the light emitting chips 71 and 72, a concave lens, and a convex lens having a total reflection surface in the center portion. It is not limited.

3, 5, and 6, the reflective layer 51 disposed on the bottom of the cavity 15 may be formed of an insulating material. The reflective layer 51 may be formed of the same resin material as the body 10, for example, an epoxy material or a silicon material. The reflective layer 51 is formed as one body during the injection molding of the body 10.

The reflective layer 51 extends from the body 10 to the bottom of the cavity 15 and has a predetermined thickness T2. The thickness T2 of the reflective layer 51 may be less than or equal to 10% of the thickness T4 of the light emitting chips 71 and 72 or less than or equal to 15 탆 have. Also, the reflective layer 51 may be formed to have a thickness of 10% or less of the thickness of the light emitting chips 71 and 72. As shown in FIG. 11, the thickness T2 of the reflective layer 51 is sharply reduced to 98.5% or less when the thickness is 20 m or more. The reflective layer 51 exhibits a light efficiency of 99% or more at a thickness of 15 m or less.

Table 1 shows the reflection characteristics of EMC materials and Ag, PPA, and PCT materials.

물질 Ag PPA PCT EMC Reflectance (%) 450 nm 92.83% 93.5% 92.8% 91.7% 540 nm 97.15% 95.2% 94.2% 93.5% 620 nm 99.1% 95.4% 94.6% 94.0%

The reflectivity of the EMC material is similar to that of PPA and PCT materials.

In addition, the EMC component has a lambertian reflection characteristic similar to that of the PPA and PCT diffusion components, thereby improving the light efficiency. Since the lambertian reflection performs random reflection regardless of the incident angle of light, most of the light reflected at the bottom can be emitted into the air through the mold member.

Among the diffuse reflection materials, PPA and PCT can not be injection-molded in a large amount such as a body and a reflective layer in the same manner as a transfer molding method. Accordingly, the embodiment can provide the body 10 and the reflective layer by injection molding with an epoxy or silicone material such as EMC to provide optical characteristics similar to those of PPA and PCT.

2 and 5, the first and second lead frames 21 and 31 are provided with recesses 25 and 35 in the outer frame portion thereof. The recesses 35 and 35 are formed in the first and second lead frames 21 and 31, The lower protrusion 8 of the body 10 is separated from the two recessed portions 21A and 31A. The depths of the recesses 25 and 35 of the lead frames 21 and 31 are set to be thinner than the thicknesses T1 of the first and second lead frames 21 and 31, , 31A, and may be formed in the range of 0.1 mm-0.2 mm, for example.

FIG. 7 is a perspective view illustrating a light emitting device according to a second embodiment, FIG. 8 is a view showing an example of a lead frame of the light emitting device of FIG. 7, and FIG. 9 is a side sectional view of the light emitting device of FIG. In describing the second embodiment, the same parts as those of the first embodiment will be described with reference to the first embodiment.

7 to 9, the light emitting device 100A includes a body 10 having a cavity 15 and a reflection layer 51A, first and second lead frames 21 and 31, a third lead frame 41 ), Light emitting chips 71 and 72, wires 73 to 76, and a molding member 91.

The first through third lead frames 21, 31 and 41 have no recessed portion. On the bottom of the cavity 15 among the upper regions of the first through third lead frames 21, 31 and 41, A reflective layer 51A is disposed. Accordingly, the depth H2 of the cavity 15 becomes thin. The depth H2 of the cavity 15 is a depth from the upper surface of the body 10 to the upper surface of the reflective layer 51 and may be in the range of 0.4 mm or more to 0.45 mm-0.6 mm, for example. This makes it possible to reduce the depth H2 of the cavity 15 by arranging the light emitting chips 71 and 72 in the openings 52 and 53 and covering the entire bottom surface of the cavity 15 with the reflective layer 51. By lowering the depth H2 of such a cavity 15, the light efficiency can be improved. The center of the openings 52 and 53 may be arranged on the same center line on the Y axis. The reflective layer 51A includes a plurality of openings 52, 53, 54, 55, 56, 52-1 and 53-1 do. A part of the first to third lead frames 21, 31 and 41 may be exposed to the openings 52, 53, 54, 555, 56, 52-1 and 53-1, 71, 72), the protection element 81, and a part of the wires 73-76, 82 can be arranged.

The first light emitting chip 71 is disposed in the first opening 52 of the reflective layer 51 disposed in the cavity 15 and is disposed on the first lead frame 21 exposed on the first opening 52 With the first adhesive member 71-1. The second light emitting chip 72 is disposed in the second opening 52 of the reflective layer 51 disposed in the cavity 15 and the second light emitting chip 72 is disposed on the second lead frame 31 exposed on the second opening 52 With the second adhesive member 72-1. The first and second adhesive members 71-1 and 72-1 may be an insulating adhesive or a conductive adhesive.

The first light emitting chip 71 is connected to the first lead frame 21 exposed in the third opening 54 of the reflective layer 51 by the first wire 73 and the second lead 74 is connected to the reflective layer 51 which are exposed to the fifth openings 56 of the first and second lead frames 51, 51, respectively. The third opening 54 is disposed between the first light emitting chip 71 and the third side surface portion 13 and the fifth opening 56 is located closer to the second side surface 12 than the light emitting chips 71, .

The second light emitting chip 72 is connected to the second lead frame 31 exposed in the fourth opening 55 of the reflective layer 51 by the third wire 75 and the fourth wire 76 is connected to the reflective layer 51 which are exposed to the fifth openings 56 of the first and second lead frames 51, 51, respectively. The first through fourth wires 73-76 may be made of gold, but are not limited thereto. The third lead frame 41 connects the first light emitting chip 71 and the second light emitting chip 72. The fourth opening 55 is disposed between the second light emitting chip 72 and the fourth side surface 14.

The protection element 81 may be disposed on a part of the first lead frame 21. The protection element 81 is disposed on the first lead frame 21 exposed in the sixth opening 52-1 of the reflective layer 51 and is connected to the seventh opening 53-1 To the second lead frame 31 exposed to the outside. The sixth opening 52-1 may be connected to the first opening 52 and the seventh opening 53-1 may be connected to the second opening 53. [ The sixth and seventh openings 52-1 and 53-1 are disposed adjacent to the first side portion 11 of the light emitting chips 71 and 72, respectively.

The protection element 81 is connected to the connection circuit of the first light emitting chip 71 and the second light emitting chip 72 in parallel to protect the light emitting chips 71 and 72. The protection element 81 is disposed in the sixth opening 52-1 where the reflective layer 51 is opened so that loss of light emitted from the light emitting chips 71 and 72 can be reduced.

The third and fourth openings 54 and 55 may have a circular or polygonal shape and the width thereof may be in the range of 200 μm or more, for example, 300 μm to 600 μm. The fifth openings 56 may have different lengths and widths, but are not limited thereto. The sixth and seventh openings 52-1 and 53-1 may be polygonal or circular, and the width of one side of the sixth and seventh openings 52-1 and 53-1 may be 300 μm or more, for example, 300 to 600 μm. The seventh opening 53-1 may have the same shape as the sixth opening 53-1, but the present invention is not limited thereto.

9, the protrusion 46A of the third lead frame 41 protrudes through the opening of the reflective layer 51A so as to be disposed on the same plane as the upper surface of the reflective layer 51A or on a different plane. The protrusions 46A protrude above the upper surfaces of the first and second lead frames 21 and 31 and are disposed between the first and second light emitting chips 71 and 72. [ The lengths of the second and fourth wires 74 and 76 connected to the protrusion 46A are shortened and the difference in height from the upper surface of the light emitting chips 71 and 72 is reduced to increase the fatigue stress of the wire , It is possible to prevent an open failure of the wire.

The reflective layer 51A covering the first to third lead frames 21, 31 and 41 has a structure extending from the body 10 to the bottom of the cavity 15 and having a predetermined thickness T3 do. The thickness T3 of the reflective layer 51A may be less than or equal to 10% of the thickness of the light emitting chips 71 and 72 or less than or equal to 15 탆. Also, the reflective layer 51A may be formed to have a thickness of 10% or less of the substrate thickness of the light emitting chips 71 and 72. As shown in FIG. 11, the thickness T3 of the reflective layer 51A is sharply reduced to 98.5% or less when the thickness is 20 m or more. The reflective layer 51A exhibits a light efficiency of 99% or more at a thickness of 15 mu m or less.

The distance between the first light emitting chip 71 or the second light emitting chip 72 and the reflective layer 51A may be in the range of 40 탆 or more, for example, 60 탆 to 80 탆. 12, the light efficiency is increased by 99.5% or more when the distance between the light emitting chip and the reflective layer is 40 占 퐉 or more, and the light efficiency is 99.9% or more when the distance is between 60 占 퐉 and 80 占 퐉. In order to prevent light loss due to the interval between the light emitting chips 71 and 72 and the reflective layer 51A, the light emitting chips 71 and 72 may be spaced apart by 40 mu m or more.

10 is a side cross-sectional view of the light emitting device according to the third embodiment.

10, the light emitting device 100C includes a body 10 having a cavity 15 and a reflective layer 51, a first lead frame 21 having a first protrusion 62, a second protrusion 53, A light emitting chip 71B, and a molding member 91. The light emitting chip 71B is a light emitting chip.

A reflective layer 51 of the body 10 is formed on the entire bottom of the cavity 15 and an opening 61 is formed in the center of the reflective layer 51. The first lead frame 21 is exposed to the opening 61 and the light emitting chip 71B is bonded to the first lead frame 21 and 31 with an adhesive member 71-1. The first projecting portion 62 of the first lead frame 21 and the second projecting portion 63 of the second lead frame 31 are disposed on the same plane as the upper surface of the reflective layer 51, . The first protrusions 62 of the first lead frame 21 and the second protrusions 63 of the second lead frame 31 are disposed higher than the upper surface of the light emitting chip 71B.

The first wire 73 is connected to the light emitting chip 71B and the first protrusion 62 and the second wire 74 is connected to the light emitting chip 71B and the second protrusion 63. [ The distance between the first and second wires 73 and 74 from the upper surface of the light emitting chip 71B is reduced by the height of the first and second projections 62 and 63, and the fatigue stress is increased. Accordingly, open failure of the wires 73 and 74 can be reduced.

The protection element (not shown) may be disposed on the boundary between the lead frames on the bottom of the cavity 15. At this time, the protection element may be disposed away from the light emitting chip 71B, and may be connected in parallel with the light emitting chip 71B.

The light emitting chip according to the embodiment will be described with reference to Figs. 14 and 15 by way of example.

14 is a view showing a light emitting chip according to an embodiment.

Referring to FIG. 14, the light emitting chip 71 includes a substrate 311, a buffer layer 312, a light emitting structure 310, a first electrode 316, and a second electrode 317. The substrate 311 includes a substrate of a light-transmitting or non-light-transmitting material, and also includes a conductive or insulating substrate.

The buffer layer 312 reduces the lattice constant difference between the substrate 311 and the material of the light emitting structure 310, and may be formed of a nitride semiconductor. A nitride semiconductor layer not doped with a dopant may be further formed between the buffer layer 312 and the light emitting structure 310 to improve crystal quality.

The light emitting structure 310 includes a first conductive semiconductor layer 313, an active layer 314, and a second conductive semiconductor layer 315.

The first conductivity type semiconductor layer 313 is an n-type semiconductor layer. The first conductivity type semiconductor layer 313 is formed of a Group III-V compound semiconductor doped with a first conductivity type dopant, The conductive dopant is an n-type dopant including Si, Ge, Sn, Se, and Te.

A first clad layer may be formed between the first conductive semiconductor layer 313 and the active layer 314. [ The first clad layer may be formed of a GaN-based semiconductor, and the band gap of the first clad layer may be greater than a bandgap of the active layer 314. The first cladding layer is formed in the first conductivity type and serves to constrain carriers.

The active layer 314 is disposed on the first conductive semiconductor layer 313 and selectively includes a single quantum well, a multiple quantum well (MQW), a quantum wire structure, or a quantum dot structure. do. The active layer 314 includes a well layer and a barrier layer period. The well layer comprises a composition formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1), and wherein the barrier layer is In _x Al _y And Ga _1-xy N (0? X? 1, 0? Y? 1, 0? X + y? 1). The period of the well layer / barrier layer may be one or more cycles using a lamination structure of, for example, InGaN / GaN, GaN / AlGaN, InGaN / AlGaN, InGaN / InGaN, and InAlGaN / InAlGaN. The barrier layer may be formed of a semiconductor material having a band gap higher than a band gap of the well layer.

A second conductive semiconductor layer 315 is formed on the active layer 314. The second conductive semiconductor layer 315 may be formed of any one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN doped with a second conductive dopant. The second conductivity type semiconductor layer 315 may be a p-type semiconductor layer, and the second conductivity type dopant may include Mg, Zn, Ca, Sr, and Ba as a p-type dopant.

The second conductive semiconductor layer 315 may include a superlattice structure, and the superlattice structure may include an InGaN / GaN superlattice structure or an AlGaN / GaN superlattice structure. The superlattice structure of the second conductivity type semiconductor layer 315 may protect the active layer 314 by diffusing a current contained in the voltage abnormally.

The first conductivity type semiconductor layer 313 may be a p-type semiconductor layer, and the second conductivity type semiconductor layer 315 may be an n-type semiconductor layer. can do. A first conductive semiconductor layer having a polarity opposite to that of the second conductive type may be further disposed on the second conductive type semiconductor layer 315.

The light emitting structure 310 may have any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure. Here, p is a p-type semiconductor layer, and n is an n-type semiconductor layer, and the - includes a structure in which the p-type semiconductor layer and the n-type semiconductor layer are in direct contact or indirect contact. Hereinafter, for convenience of explanation, the uppermost layer of the light emitting structure 310 will be described as the second conductive type semiconductor layer 315.

A first electrode 316 is disposed on the first conductive type semiconductor layer 313 and a second electrode 317 having a current diffusion layer is disposed on the second conductive type semiconductor layer 315.

15 is a view showing another example of the light emitting chip according to the embodiment. In explaining Fig. 15, the same parts as those in Fig. 14 are omitted and will be briefly described.

15, an ohmic contact layer 321 is formed under the light emitting structure 310, a reflective layer 324 is formed under the ohmic contact layer 321, and the reflective layer 324 And a passivation layer 323 may be formed around the reflective layer 324 and the light emitting structure 310. In addition,

In this light emitting chip 3102, an ohmic contact layer 321, a protective layer 323, a reflective layer 324, and a supporting member 325 are formed under the second conductive type semiconductor layer 315, .

The ohmic contact layer 321 is in ohmic contact with a lower layer of the light emitting structure 310, for example, the second conductive semiconductor layer 315. The material of the ohmic contact layer 321 may be selected from among metal oxides, metal nitrides, For example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO) zinc oxide, ATO (antimony tin oxide), GZO (gallium zinc oxide), Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, As shown in FIG. In addition, the metal material and the light transmitting conductive material such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, and ATO can be used in a multilayer structure. For example, IZO / Ni, AZO / Ag, IZO / / Ag / Ni or the like. The ohmic contact layer 321 may further include a current blocking layer to correspond to the electrode 316.

The protective layer 323 may be selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO) (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), SiO 2, SiO x, SiO x N y, Si ₃ N ₄ , Al ₂ O ₃ , and TiO ₂ . The protective layer 323 may be formed using a sputtering method, a deposition method, or the like, and metal such as the reflective layer 324 may prevent the layers of the light emitting structure 310 from being short-circuited.

The reflective layer 324 may be formed of a material selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf and combinations thereof. The reflective layer 324 may be formed to have a width larger than the width of the light emitting structure 310, which may improve the light reflection efficiency. A metal layer for bonding and a metal layer for thermal diffusion may be further disposed between the reflective layer 324 and the support member 325, but the present invention is not limited thereto.

The support member 325 may be a base substrate made of a metal such as copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), copper-tungsten (Cu- Si, Ge, GaAs, ZnO, SiC). A bonding layer may be further formed between the supporting member 325 and the reflective layer 324, and the bonding layer may bond the two layers together. The above-described light emitting chip is merely an example, and is not limited to the features disclosed above. The light emitting chip may be selectively applied to the light emitting device, but the present invention is not limited thereto.

The light emitting device according to the embodiment can be applied to an illumination system. The illumination system includes a structure in which a plurality of light emitting elements are arrayed and includes a display device shown in Figs. 16 and 17, a lighting device shown in Fig. 18, and may include an illumination lamp, a traffic light, a vehicle headlight, have.

16 is an exploded perspective view of the display device according to the embodiment.

16, the display apparatus 1000 includes a light guide plate 1041, a light source module 1031 for providing light to the light guide plate 1041, a reflection member 1022 under the light guide plate 1041, A display panel 1061 on the optical sheet 1051 and a bottom cover 1011 for accommodating the light guide plate 1041, the light source module 1031 and the reflecting member 1022 on the light guide plate 1041 , But is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 diffuses the light from the light source module 1031 to convert the light into a surface light source. The light guide plate 1041 may be made of a transparent material such as acrylic resin such as polymethyl methacrylate (PET), polyethylene terephthalate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate Resin. ≪ / RTI >

The light source module 1031 is disposed on at least one side of the light guide plate 1041 to provide light to at least one side of the light guide plate 1041 and ultimately serves as a light source of the display device.

At least one light source module 1031 is disposed in the bottom cover 1011 and may directly or indirectly provide light from one side of the light guide plate 1041. [ The light source module 1031 includes a circuit board 1033 and a light emitting device 100 according to the embodiment described above and the light emitting device 100 may be arrayed at a predetermined interval on the circuit board 1033 have. The circuit board may be a printed circuit board, but is not limited thereto. The circuit board 1033 may include a metal core PCB (MCPCB), a flexible PCB (FPCB), or the like, but is not limited thereto. When the light emitting device 100 is mounted on the side surface of the bottom cover 1011 or on the heat radiation plate, the circuit board 1033 can be removed. A part of the heat radiation plate may be in contact with the upper surface of the bottom cover 1011. Therefore, heat generated in the light emitting device 100 can be emitted to the bottom cover 1011 via the heat dissipation plate.

The plurality of light emitting devices 100 may be mounted on the circuit board 1033 such that the light emitting surface of the light emitting device 100 is spaced apart from the light guiding plate 1041 by a predetermined distance. The light emitting device 100 may directly or indirectly provide light to the light-incident portion, which is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 reflects the light incident on the lower surface of the light guide plate 1041 and supplies the reflected light to the display panel 1061 to improve the brightness of the display panel 1061. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light source module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to a top cover (not shown), but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, including first and second transparent substrates facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 transmits or blocks light provided from the light source module 1031 to display information. The display device 1000 can be applied to video display devices such as portable terminals, monitors of notebook computers, monitors of laptop computers, and televisions.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal / vertical prism sheet, a brightness enhanced sheet, and the like. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet concentrates incident light on the display panel 1061. The brightness enhancing sheet reuses the lost light to improve the brightness I will. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

The optical path of the light source module 1031 may include the light guide plate 1041 and the optical sheet 1051 as an optical member, but the invention is not limited thereto.

17 is a view showing a display device having a light emitting element according to the embodiment.

17, the display device 1100 includes a bottom cover 1152, a circuit board 1120 on which the light emitting device 100 of the above-described embodiment is arranged, an optical member 1154, and a display panel 1155 .

The circuit board 1120 and the light emitting device 100 may be defined as a light source module 1060. The bottom cover 1152, the at least one light source module 1060, and the optical member 1154 may be defined as a light unit 1150.

The bottom cover 1152 may include a receiving portion 1153, but the present invention is not limited thereto.

The optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a PMMA (poly methy methacrylate) material, and such a light guide plate may be removed. The diffusion sheet diffuses the incident light, and the horizontal and vertical prism sheets condense the incident light onto the display panel 1155. The brightness enhancing sheet reuses the lost light to improve the brightness .

The optical member 1154 is disposed on the light source module 1060, and performs surface light source, diffusion, and light condensation of light emitted from the light source module 1060.

18 is an exploded perspective view showing a lighting apparatus according to an embodiment.

18, the lighting apparatus according to the embodiment includes a cover 2100, a light source module 2200, a heat discharger 2400, a power supply unit 2600, an inner case 2700, and a socket 2800 . Further, the illumination device according to the embodiment may further include at least one of the member 2300 and the holder 2500. The light source module 2200 may include a light emitting device package according to an embodiment.

For example, the cover 2100 may have a shape of a bulb or a hemisphere, and may be provided in a shape in which the hollow is hollow and a part is opened. The cover 2100 may be optically coupled to the light source module 2200. For example, the cover 2100 may diffuse, scatter, or excite light provided from the light source module 2200. The cover 2100 may be a kind of optical member. The cover 2100 may be coupled to the heat discharging body 2400. The cover 2100 may have an engaging portion that engages with the heat discharging body 2400.

The inner surface of the cover 2100 may be coated with a milky white paint. Milky white paints may contain a diffusing agent to diffuse light. The surface roughness of the inner surface of the cover 2100 may be larger than the surface roughness of the outer surface of the cover 2100. This is for sufficiently diffusing and diffusing the light from the light source module 2200 and emitting it to the outside.

The cover 2100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 2100 may be transparent so that the light source module 2200 is visible from the outside, and may be opaque. The cover 2100 may be formed by blow molding.

The light source module 2200 may be disposed on one side of the heat discharging body 2400. Accordingly, heat from the light source module 2200 is conducted to the heat discharger 2400. The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250.

The member 2300 is disposed on the upper surface of the heat discharging body 2400 and has guide grooves 2310 through which the plurality of light source portions 2210 and the connector 2250 are inserted. The guide groove 2310 corresponds to the substrate of the light source unit 2210 and the connector 2250.

The surface of the member 2300 may be coated or coated with a light reflecting material. For example, the surface of the member 2300 may be coated or coated with a white paint. The member 2300 reflects the light reflected by the inner surface of the cover 2100 toward the cover 2100 in the direction toward the light source module 2200. Therefore, the light efficiency of the illumination device according to the embodiment can be improved.

The member 2300 may be made of an insulating material, for example. The connection plate 2230 of the light source module 2200 may include an electrically conductive material. Therefore, electrical contact can be made between the heat discharging body 2400 and the connecting plate 2230. The member 2300 may be formed of an insulating material to prevent an electrical short circuit between the connection plate 2230 and the heat discharging body 2400. The heat discharger 2400 receives heat from the light source module 2200 and heat from the power supply unit 2600 to dissipate heat.

The holder 2500 blocks the receiving groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 housed in the insulating portion 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510. The guide protrusion 2510 may have a hole through which the protrusion 2610 of the power supply unit 2600 passes.

The power supply unit 2600 processes or converts an electrical signal provided from the outside and provides the electrical signal to the light source module 2200. The power supply unit 2600 is housed in the receiving groove 2719 of the inner case 2700 and is sealed inside the inner case 2700 by the holder 2500.

The power supply unit 2600 may include a protrusion 2610, a guide 2630, a base 2650, and an extension 2670.

The guide portion 2630 has a shape protruding outward from one side of the base 2650. The guide portion 2630 may be inserted into the holder 2500. A plurality of components may be disposed on one side of the base 2650. The plurality of components include, for example, a DC converter for converting AC power supplied from an external power source into DC power, a driving chip for controlling driving of the light source module 2200, an ESD (ElectroStatic discharge) protective device, and the like, but the present invention is not limited thereto.

The extension portion 2670 has a shape protruding outward from the other side of the base 2650. The extension portion 2670 is inserted into the connection portion 2750 of the inner case 2700 and receives an external electrical signal. For example, the extension portion 2670 may be provided to be equal to or smaller than the width of the connection portion 2750 of the inner case 2700. One end of each of the positive wire and the negative wire is electrically connected to the extension portion 2670 and the other end of the positive wire and the negative wire are electrically connected to the socket 2800 .

The inner case 2700 may include a molding part together with the power supply part 2600. The molding part is a hardened portion of the molding liquid so that the power supply unit 2600 can be fixed inside the inner case 2700.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Will be clear to those who have knowledge of. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

10: body 11-14:
15: cavity 21, 31, 41: lead frame
27, 28, 27-1, 37, 38, 7-1, 46: protrusions 51, 51A:
54, 55, 56, 52-1, 53-1, 61-63: openings 71, 72, 71A, 71B:
72-76,82: Wire 81: Protection element
91: molding member 100, 100A, 100C:

Claims (16)

A body having a cavity;
A first lead frame disposed at the bottom of the cavity;
A second lead frame disposed at the bottom of the cavity;
A third lead frame disposed between the first and second lead frames;
A reflective layer formed of a material of the body on the first to third lead frames disposed in the cavity bottom;
A first light emitting chip disposed on the first lead frame;
A second light emitting chip disposed on the second lead frame;
A first wire having one end and the other end connected to the first light emitting chip and the first lead frame, respectively;
A second wire having one end and the other end connected to the first light emitting chip and the third lead frame, respectively;
A third wire having one end and the other end connected to the second light emitting chip and the second lead frame, respectively;
A fourth wire having one end and the other end connected to the second light emitting chip and the third lead frame, respectively; And
And a molding member disposed in the cavity and surrounding the first and second light emitting chips and the first to fourth wires,
Wherein the third lead frame includes a protrusion protruding from an upper surface of the first and second lead frames to connect the second and fourth wires,
Wherein a vertical distance between an upper surface of the first and second light emitting chips and an upper surface of the first and second lead frames is a distance between an upper surface of the first and second light emitting chips and an upper surface of the protrusion of the third lead frame Is greater than the vertical distance,
Wherein a difference in vertical height between one end and the other end of the second and fourth wires is smaller than a height difference in a vertical direction between one end and the other end of the first and third wires. The light emitting device according to claim 1, wherein the first and second lead frames include a recess portion, and the reflective layer is disposed on the recess portion. The light emitting device according to claim 2, wherein a part of the first and second lead frames protrude from the bottom of the recess part. The light emitting device according to claim 2, wherein the upper surface of the reflective layer is disposed on the same plane as the upper surfaces of the first and second lead frames. The light emitting device of claim 1, wherein the reflective layer comprises: a first opening in which the first light emitting chip is disposed; And a second opening in which the second light emitting chip is disposed. The display device of claim 5, wherein the reflective layer comprises: a third opening corresponding to a portion of the first lead frame; A fourth opening corresponding to a portion of the second lead frame; And a fifth opening corresponding to the protrusion of the third lead frame. The light emitting device according to claim 6, wherein a part of the first and second lead frames disposed in the third opening and the fourth opening are formed lower than the protrusion. The light emitting device according to any one of claims 1 to 7, wherein the reflective layer is disposed at 10% or less of the thickness of the first light emitting chip. The light emitting device according to any one of claims 1 to 7, comprising a protection element disposed on at least one of the first lead frame and the second lead frame. The light emitting device according to claim 5, wherein the reflective layer includes a fifth opening on the first lead frame, and a protection element is disposed in the fifth opening. The light emitting device of claim 1 or 5, wherein the body and the reflective layer are formed of epoxy or silicon. The light emitting device of claim 11, further comprising a metal oxide added to the body and the reflective layer. An illumination system having a light-emitting element according to any one of claims 1 to 3. 6. The method of claim 5,
Wherein the reflective layer has a thickness of 3 탆 to 15 탆. 6. The method of claim 5,
Wherein a distance between the first light emitting chip or the second light emitting chip and the reflective layer is 40 占 퐉 to 80 占 퐉. The method according to claim 1,
Wherein the vertical distance between the uppermost surface of the body and the upper surface of the first and second light emitting chips is smaller than the vertical distance between the upper surface of the body and the upper surface of the protrusion.

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