KR101977831B1 - Light emitting device and lighting system - Google Patents

Abstract

A light emitting device according to an embodiment includes: a body having a cavity; A first lead frame disposed at the bottom of the cavity; A second lead frame disposed at the bottom of the cavity; And a light emitting chip disposed on the first lead frame, wherein the cavity includes a first inner side adjacent to the light emitting chip and a second inner side opposite to the first inner side, And a width narrower than a width of the first inner side surface and a width of at least one side surface of the light emitting chip.

Description

[0001] LIGHT EMITTING DEVICE AND LIGHTING SYSTEM [0002]

The present invention relates to a light emitting device and a lighting system.

BACKGROUND ART A light emitting device, for example, a light emitting device (Light Emitting Device) is a type of semiconductor device that converts electrical energy into light, and has been widely recognized as a next generation light source in place of existing fluorescent lamps and incandescent lamps.

Since the light emitting diode generates light by using a semiconductor device, the light emitting diode consumes very low power as compared with an incandescent lamp that generates light by heating tungsten or a fluorescent lamp that generates ultraviolet rays generated by high-pressure discharge .

In addition, since the light emitting diode generates light using the potential gap of the semiconductor device, it has a longer lifetime, faster response characteristics, and an environment-friendly characteristic as compared with the conventional light source.

Accordingly, much research has been conducted to replace an existing light source with a light emitting diode. The light emitting diode has been increasingly used as a light source for various lamps used in indoor and outdoor, lighting devices such as a liquid crystal display, have.

The embodiment provides a light emitting device having a new cavity structure.

Embodiments provide a light emitting device having a structure in which the first inner side surface of the cavity and the second inner side surface corresponding to the first inner side have different widths.

Embodiments provide a light emitting device wherein the light emitting chip is disposed closer to a first inner side having a wider width than a second inner side of the cavity.

Embodiments provide a light emitting device having a light emitting chip in a cavity and a protective chip in the body.

The embodiment provides a light emitting device having two inner sides whose interior angles are obtuse in the cavity.

Embodiments provide a light emitting device having an inner surface curvedly connected to an adjacent inner surface in a cavity.

Embodiments provide a light emitting device in which the bottom height of the cavity is different.

Embodiments provide a light emitting device capable of enhancing bonding with a lower portion of a body through a stepped structure of a lead frame.

The embodiment provides a light emitting device that can maximize the bottom area of the gap portion disposed between the first and second lead frames.

Embodiments provide a light emitting device comprising at least one lead frame having different depths recessed from opposite sides thereof in opposite directions.

Embodiments provide a light emitting device having a first lead frame recessed at different depths and a light emitting chip disposed on the first lead frame.

The embodiment is characterized in that the depth of the first recess portion, which is recessed from the gap portion between the first and second lead frames in the direction of the first lead frame, is larger than the depth of the second recess A light emitting device having a depth two times or more than the depth of a portion is provided.

The embodiment provides a light emitting device in which the width of the first recess portion of the first lead frame has the same width as the width of the first lead frame.

A light emitting device according to an embodiment includes: a body having a cavity; A first lead frame disposed at the bottom of the cavity; A second lead frame disposed at the bottom of the cavity; And a light emitting chip disposed on the first lead frame, wherein the cavity includes a first inner side adjacent to the light emitting chip and a second inner side opposite to the first inner side, And a width narrower than a width of the first inner side surface and a width of at least one side surface of the light emitting chip.

The embodiment can provide the cavity of the light emitting element in an asymmetric structure.

The embodiment can improve the distribution of the directivity angle in the asymmetric cavity by gradually narrowing the interval between the cavities in the light emitting element.

The embodiment can improve the light efficiency in the cavity of the light emitting element and improve the reliability.

The embodiment can provide a light emitting device capable of reducing light loss due to a gap between the light emitting chip and an inner surface of a cavity located relatively far from the light emitting chip when the light emitting chip having a large area is mounted.

Embodiments can reduce differences in light directing angles in different axes of light emitting devices.

The embodiment can effectively support the lower region between the lead frames.

Embodiments can provide a general-purpose light-emitting device having a lead area at a constant interval to be mounted on a substrate.

The embodiment provides a light emitting device having a cavity with an asymmetric structure so that it can be used for general purposes.

Embodiments can improve the reliability of a light emitting device and an illumination system having the same.

1 is a perspective view of a light emitting device according to a first embodiment.
2 is a plan view of the light emitting device of FIG.
3 is a partial enlarged view of the light emitting device of Fig.
4 is a cross-sectional view of the light emitting device of FIG. 2 taken along the line AA.
5 is a cross-sectional view of the light-emitting device of Fig. 2 on the BB side.
6 to 9 are views showing a body side view of the light emitting device of FIG.
FIG. 10 is a rear view of the light emitting device of FIG. 2. FIG.
11 and 12 are a front view and a rear view of the lead frame of the light emitting device of FIG.
Figs. 13 and 14 are a plan view and a rear view showing another example of the lead frame of the light emitting device of Figs. 11 and 12. Fig.
15 is a plan view showing a light emitting device according to the second embodiment.
16 is a plan view showing a modification of the light emitting element of Fig.
17 is a plan view showing a modified example of the light emitting element of Fig.
18 is a plan view showing a light emitting device according to the third embodiment.
19 is a plan view showing a light emitting device according to the fourth embodiment.
20 is a side sectional view showing a light emitting device according to the fifth embodiment.
21 is a side sectional view showing a light emitting device according to the sixth embodiment.
22 is a side sectional view showing a light emitting device according to a seventh embodiment.
23 is a side sectional view showing a light emitting device according to an eighth embodiment.
FIGS. 24 and 25 are graphs comparing the directivity angular distributions of the light emitting devices according to the embodiment.
26 is a view showing an example of a light emitting chip of a light emitting device according to the embodiment.
27 is a view showing another example of the light emitting chip of the light emitting device according to the embodiment.
28 is a perspective view showing a display device having a light emitting element according to an embodiment.
29 is a perspective view showing a display device having a light emitting element according to an embodiment.
30 is a diagram showing an example of a lighting apparatus having a light emitting element according to the embodiment.

In the description of the embodiments, each substrate, frame, sheet, layer or pattern is formed "on" or "under" each substrate, frame, sheet, Quot; on " and " under " include both being formed "directly" or "indirectly" . In addition, the upper or lower reference of each component is described with reference to the drawings. The size of each component in the drawings may be exaggerated for the sake of explanation and does not mean the size actually applied.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. In the drawings, dimensions are exaggerated, omitted, or schematically illustrated for convenience and clarity of illustration. Also, the size of each component does not entirely reflect the actual size. The same reference numerals denote the same elements throughout the description of the drawings.

Hereinafter, a light emitting device according to an embodiment will be described with reference to the accompanying drawings.

FIG. 1 is a perspective view of a light emitting device according to a first embodiment, FIG. 2 is a plan view of the light emitting device of FIG. 1, and FIG. 3 is a partial enlarged view of the light emitting device of FIG. FIG. 4 is a sectional view of the light emitting device of FIG. 1 taken along the YY plane, FIG. 5 is a sectional view of the light emitting device of FIG. 1 taken along the line XX, and FIGS. 6 to 9 are views showing a side view of the body of the light emitting device of FIG. Fig. 11 and Fig. 12 are a front view and a rear view of the lead frame of the light emitting element of Fig. 2;

1 to 5, a light emitting device 100 includes a body 111 having a cavity 101, a plurality of lead frames 121 and 131, a light emitting chip 171, a wire 175, and a molding member 161 ).

The body 111 may include an insulating material or a conductive material. The body 111 may be formed of a resin material such as polyphthalamide (PPA), polycyclohexylene terephthalate (PCT), silicon (Si), a metal material, a photo sensitive glass (PSG) (Al ₂ O ₃ ), and a printed circuit board (PCB). For example, the body 111 may be injection molded by injection molding, and the material may be made of a resin material such as epoxy or silicone.

The body 111 includes an epoxy molding compound material having epoxy, and the EMC material is improved in moldability, moisture resistance, adhesion, and is an insulating material. A filler, which is a metal oxide such as TiO ₂ or SiO ₂ , may be added to the body 111 to enhance reflection efficiency. The content of the filler may be 10 wt% or more, for example, 15 wt% or more in the body 111.

The body 111 may be formed of a reflective material for light reflection or may be formed of a light transmitting material to widen the directional angle distribution, but the present invention is not limited thereto.

The outer shape of the body 111 may be formed in a polygonal structure such as a rectangular shape or a square shape as viewed from above, and the outer edge portion may be formed as a surface or a curved surface.

When the body 111 has a rectangular shape, the body 111 may include a plurality of side portions, for example, at least four side portions 61 to 64. At least one of the plurality of side portions 61 to 64 may be arranged to be perpendicular or inclined with respect to the lower surface of the body 111. The first side surface portion 61 and the second side surface portion 62 may be opposite to each other and the third side surface portion 63 may be formed on the side surface of the body 111, And the fourth side surface portion 64 are opposed to each other. A first axis passing through the center of the first side part 61 and the second side part 62 of the body 111 is defined as YY and a third side part 63 of the body 111 and the fourth side part 64) may be defined as XX. The first axis Y-Y may be perpendicular to the second axis X-X. The first axis Y-Y of the light emitting device may be a longitudinal direction of the body 111 and the second axis X-X may be a width direction of the body 111.

The length Y1 of the third side surface portion 63 or the fourth side surface portion 64 of the body 111 may be equal to or greater than the width X1 of the first side surface portion 61 or the second side surface portion 62 And may be formed longer than the width X1 of the first side surface portion 61 or the second side surface portion 62, for example, 1.2 times longer than the width X1.

The body 111 includes a cavity 101 having an open upper portion and a predetermined depth and the cavity 101 has a shape such as a cup structure or a recess structure having a lower depth than the upper surface of the body 111 . A plurality of lead frames 121 and 131 and a gap portion 115 may be disposed on the bottom of the cavity 101 and the gap portion 115 is disposed between the plurality of lead frames 121 and 131.

The cavity 101 may include a plurality of inner sides 11 to 16. The inner surfaces 11 to 16 of the cavity 101 may be formed with more than four, for example, five or six or more. It is assumed that the cavity 101 of the embodiment is formed by six inner sides 11 to 16 and at least one of the first to sixth inner sides 11 to 16 includes a curved surface in a predetermined section Or may be connected to a curved surface.

At least one of the inner side faces 11 to 16 is inclined outward with respect to the thickness direction Z0 of the light emitting chip 171. For example, And may be formed to be inclined with respect to the upper surface of the lead frames 121 and 131 or the horizontal bottom of the cavity 101. [ The inner surfaces 11 to 16 of the cavity 101 of the embodiment may be described as being formed as inclined surfaces, but the present invention is not limited thereto. For example, at least one of the inner surfaces 11 to 16 of the cavity 101 may be formed perpendicular to the upper surface of the lead frames 121 and 131 or the horizontal bottom of the cavity, but the invention is not limited thereto.

2 and 3, the cavity 101 is formed such that the sum of the inner angles of the inner sides 11 to 16 is equal to or greater than 400 degrees, and the boundary region in which the inner angle is obtuse- For example, it may include four regions.

The inner side surfaces 11 to 16 of the cavity 101 may be defined as first to sixth inner side surfaces 11 to 16 and the first inner side surface 11 may be defined by the first side surface 11 of the body 111, The second inner side surface 12 corresponds to the second side surface portion 62 of the body 111 and the third inner side surface 13 corresponds to the third side surface portion 63 of the body 111, The fourth inner side surface 14 corresponds to the fourth side surface portion 64 of the body 111 and the fifth inner side surface 15 corresponds to the third inner side surface 13 and the second inner side surface 12 ) And is formed at an obtuse angle with at least one of the third inner side surface (13) and the second inner side surface (12), and the sixth inner side surface (16) is formed between the fourth inner side surface (14) (12) and is formed at an obtuse angle with at least one of the fourth inner side surface (14) and the second inner side surface (12).

The first to fourth inner sides 11 to 14 may be disposed to correspond to the sides of the light emitting chip 171, respectively.

The inner angle? 2 between the fifth inner side surface 15 and the third inner side surface 13 can be formed in an obtuse angle range of, for example, 130 to 170 degrees. The angle between the sixth inner side surface 16 and the fourth inner side surface 14 may be formed in the range of the angle? 2 or may be the same as the angle? 2.

An internal angle? 3 between the fifth inner side surface 15 and the second inner side surface 12 may be formed in an obtuse angle range of, for example, 140 to 165 degrees. The inner angle between the sixth inner side surface 16 and the second inner side surface 12 may be in the range of the angle? 3 or may be the same as the angle? 3. The fifth inner side surface 15 may be formed at an angle? 1 of less than 90 degrees, for example, in a range of 10 to 50 degrees from a straight line segment extending from the third inner side surface 13.

The first inner side surface 11 and the second inner side surface 12 are parallel to each other and the third inner side surface 13 and the fourth inner side surface 14 are parallel to each other and the first inner side surface 16 ) And the second inner side surface (12). The fifth and sixth inner sides 15 and 16 are formed in an oblique shape not parallel to the first to fourth inner sides 11 to 14. Corner portions between the first to sixth inner side surfaces 11 to 16 may be formed by curved surfaces or angled surfaces, but the present invention is not limited thereto.

The second width D2 of the second inner side surface 12 of the cavity 101 may be narrower than the first width D1 of the first inner side surface 11. [ The second width D2 may be 1.5 times or more, for example, 2.5 to 3.5 times narrower than the first width D1. The second width D2 may be less than the width X3 of the light emitting chip 171 and less than 3.5 times the width X1 of the body 111. [ The first width D1 may be equal to or greater than 1.2 times the width X3 of the light emitting chip 171. The second width D2 may be in the range of 0.42 mm ± 0.05 mm, and may be changed according to the size of the light emitting chip 171. The first width D1 and the second width D2 may be the length of a boundary portion between the first and second inner sides 11 and 12 and the upper surface of the body 111. [

The second width D2 may be narrower than the first width D1 by a factor of, for example, about 2.5 to 3.5 so as to provide a cavity structure having an asymmetric structure in either axial direction, It is possible to prevent a decrease in optical loss as compared with a structure in which the protection chip 173 is disposed in the cavity 101 by disposing the protection chip 173 in the body 111. [

The difference between the second width D2 and the first width D1 may be set in consideration of the size of the protection chip 173 and the bonding area of the wire 175 in the second lead frame 131. [ For example, when the number of the wires 175 is one, the difference between the second width D2 and the first width D1 may be larger, but the present invention is not limited thereto.

Further, the cavity can be provided in a symmetrical structure in the other axial direction, so that deterioration of the light extraction efficiency can be prevented. The second width D2 of the second inner side surface 12 of the cavity 101 is formed to be narrower than the first width D1 of the first inner side surface 11 so that the cavity 5 having the four inner side surfaces By providing a cavity having one or more inner sides, the light loss can be minimized.

The center of the first inner side surface 11 and the center of the second inner side surface 12 of the cavity 101 may be arranged on the same center line, for example, on the same line as the first axis Y-Y. As another example, any one of the center of the first inner side surface 11 and the center of the second inner side surface 12 of the cavity 101 may be arranged to be shifted from the first axis YY, Do not.

The maximum distance between the fifth inner side surface 15 and the sixth inner side surface 16 of the cavity 101 is a distance D1 between the third inner side surface 13 and the fourth inner side surface 14 , And the minimum spacing may be the same as the width D2 of the second inner side 12.

The width E1 of the fifth inner side surface 15 or the sixth inner side surface 16 is smaller than the width D1 of the first inner side surface 11 and the width D2 of the second inner side surface 12 ). ≪ / RTI > The width D1 of the first inner side surface 11 and the width A1 of the third or fourth inner side surfaces 13 and 14 may be the same or different and are not limited thereto. The distance A2 is a distance from the horizontal line of the second inner side surface 12 of the cavity 101 to the inflection point between the third inner side surface 13 and the fifth inner side surface 15, 14 and the sixth inner side 16, and is shorter than the width A1.

The length Y2 of the cavity 101 in the direction of the first axis YY may be greater than the width D1 of the direction of the second axis XX. For example, the length Y2 may be 1.2 times the width D1 For example, 1.4 times or more. The cavity 101 has a substantially line-symmetrical shape with respect to the first axis Y-Y and an asymmetrical shape with respect to the second axis X-X.

The shape of the top surface of the first lead frame 121 exposed at the bottom of the cavity 101 may be a rectangle or a rectangle and the shape of the cavity 101 May be formed in a trapezoidal shape. The width of the portion of the cavity 101 adjacent to the second inner side surface 12 is larger than the width of the portion of the first lead frame 131 adjacent to the second inner side surface 12 of the cavity 101. [ 121, respectively.

The angle? 4 between the first inner side surface 11 and the second inner side surface 12 of the cavity 101 is set to be larger than the upper surface of the lead frames 121 and 131 or the bottom surface of the cavity 101 as shown in FIG. For example, in the range of 91 to 120 degrees. The angle? 4 of the first inner side surface 11 or the second inner side surface 12 may be the same or different and is not limited thereto.

5, an angle [theta] 5 of the third inner side surface 13 or the fourth inner side surface 14 of the cavity 101 is 90 [deg.] Relative to the upper surface of the lead frames 121, 131 or the bottom of the cavity 101 For example, in the range of 91 to 120 degrees. The angle? 5 of the third inner side surface 13 or the fourth inner side surface 14 may be the same or different from each other, but the present invention is not limited thereto.

The first to fourth inner sides 11, 12, 13 and 14 of the cavity 101 may be inclined at the same angle with respect to the upper surface of the lead frames 121 and 131 or the bottom of the cavity 101, For example, the angles? 4 and? 5 may be in the range of 91 to 97.

The first inner side surface 11 of the cavity 101 is adjacent to the first side surface S1 of the light emitting chip 171 and the second inner side surface 12 is adjacent to the second side surface S2 of the light emitting chip 171 The third inner side surface 13 is adjacent to the third side surface S3 of the light emitting chip and the fourth inner side surface 14 is adjacent to the fourth side surface S4 of the light emitting chip 171 do. Here, the light emitting chip 171 may have a polygonal shape or a shape having a curved surface when viewed from above, but the present invention is not limited thereto. The light emitting chip 171 has a gap between the first to fourth inner sides 11 to 14 of the cavity 101 corresponding to the respective side faces S1 to S4 and the second inner side face 12, To the third inner side surface (11-13).

4 and 5, the body 111 includes a support body 112 disposed below the lead frames 121 and 131, a reflection body 113 disposed on the lead frames 121 and 131, And a gap portion 115 disposed between the first and second lead frames 121 and 131. The support body 112, the reflection body 113, and the gap part 115 may be connected to each other. The reflective body 113 may be formed to have a thickness T3 (for example, 150 mu m or more) that is thicker than the thickness of the support body 112. [ The reflective body 113 may have a thickness T3 of 50% or more of the thickness T1 of the body 111. [ Here, the depth of the cavity 101 may be defined as the thickness T3 of the reflective body 113.

A distance F1 between the first side surface portion 61 of the body 111 and the first inner side surface 11 of the cavity 101 is larger than a distance F1 between the second side surface portion 62 and the cavity 101, Of the second inner side surface 12 of the first and second inner surfaces 12a, 12b. The gap F2 is formed to be wider than the gap F1 so that the second lead frame 131 can be supported. The thickness T2 of the lead frames 121 and 131 may be equal to the thickness of the support body 112. [

Referring to FIGS. 2 and 6 to 13, the lead frame 121 includes a first lead frame 121 and a second lead frame 121. The first lead frame 121 is disposed on the bottom of the cavity 101, 1, the third and fourth inner sides 11, 13, and 14, respectively. The first lead frame 121 includes at least one first protrusion 126 exposed at the first side portion 61 of the body 111 and a second protrusion 127 exposed at the third side portion 63. [ And a third projection 128 exposed to the fourth side portion 64. The first through third protrusions 126-128 are separated from the lower surface 117 of the body 111 by a predetermined gap G1. The gap G1 may be equal to or larger than 10 mu m and may be equal to or smaller than 50% of the thickness T2 of the first lead frame 121. [ If the gap G1 is too large, the thickness of the protrusions of the first lead frame 121 becomes too thin, heat dissipation efficiency can be lowered, rigidity can be weakened, and the bonding force with the body 112 Can be degraded. If the gap G1 is too small, the support body, which is the lower part of the body 112, may be damaged.

The depth B4 and width of the first recess 122 may increase the bottom area of the gap 115. The bottom area of the gap portion 115 is increased by two times or more as compared with the structure having no recess, so that the region between the first and second lead frames 121 and 131 can be reinforced. The penetration path of the moisture penetrating into the first lead frame 121 on which the light emitting chip 171 is mounted can be increased more than twice.

The inner region of the second lead frame 131 is disposed at the bottom of the cavity 101 and the outer region of the second lead frame 131 is located below the second, fifth, and sixth inner sides 12, 15, . The second lead frame 131 includes at least one fourth protrusion 136 exposed at the second side portion 62 of the body 111, a fifth protrusion 137 exposed at the third side portion 63, And a sixth projection 138 exposed to the fourth side portion 64.

11 and 12, the first protrusion 126 of the first lead frame 121 and the fourth protrusion 136 of the second lead frame 131 may protrude in a plurality of directions. The second and third protrusions 127 and 128 of the first lead frame 121 protrude in opposite directions and the fifth and sixth protrusions 137 and 138 of the second lead frame 131 protrude in opposite directions do. The corner portions of the first and second lead frames 121 and 131 may be angular or curved.

6 to 9, the fourth to sixth protrusions 136, 137 and 138 are separated from the lower surface 117 of the body 111 by a predetermined gap G1. The gap G1 may be 10 占 퐉 or more and 50% or less of the thickness T2 of the second lead frame 131. If the gap G1 is too large, the thickness of the projections of the second deck frame 13 becomes too thin, the heat dissipation efficiency can be lowered, the rigidity can be weakened, and the bonding force with the body 112 Can be degraded. If the gap G1 is too small, the support body, which is the lower part of the body 112, may be damaged.

As shown in Figs. 4, 5 and 10, the first and second lead frames 121 and 131 include lead areas that can be bonded onto a PCB (PCB). The first lead region 125 of the first lead frame 121 is exposed to the lower surface 117 of the body 111 and disposed between the first and second recess portions 122 and 123. The second lead region 135 of the second lead frame 131 is exposed to the lower surface 137 of the body 111 and disposed between the gap portion 115 and the third recess portion 133 .

The gap B5 between the first and second lead regions 125 and 135 is further spaced from the gap between the first and second lead frames 121 and 131 at the bottom of the cavity 101. [ The length B2 of the first lead region 125 may be longer than the length C2 of the second lead region 135, but the present invention is not limited thereto. The length B2 of the first lead region 125 may be in the range of 0.5 mm ± 0.1 mm and the length C2 of the second lead region 135 may be in the range of 0.4 mm ± 0.05 mm. have. Since the area of the first lead region 125 is larger than that of the second lead region 135, heat can be effectively dissipated.

In addition, the interval B5 between the first and second lead regions 125 and 135 takes into consideration the distance from the circuit pattern of the substrate, and it is possible to provide the general-purpose light emitting device. Accordingly, the bottom surface area of the first lead frame 121 is narrower than the top surface area of the first lead frame 121, for example, 30% or less. The upper surface length B1 of the first lead frame 121 may be wider than the upper surface length C1 of the second lead frame 131 by 30% or more. This difference in length can improve the heat radiation efficiency of the light emitting chip 171.

The first lead frame 121 may have a plurality of recesses that are in contact with or coupled to the support body 112 of the body 111. For example, And a scep portion 123. The first recess 122 is formed in a region between the first lead region 125 of the first lead frame 121 and the gap portion 115 and the support body 112 is disposed do. The first lead frame 121 extends under the third side surface portion 63 and the fourth side surface portion 64 of the body 111 and the width of the first recess portion 122 is smaller than the width of the body 111 Is the same width as the width X1, that is, the interval between the third side portion 63 and the fourth side portion 64, or the same width as the length of the first side portion 11. The depth B4 of the first recess portion 122 is formed to be twice as wide as the width B3 of the second recess portion 123. The first recess portion 122 is disposed in a stepped structure below the inner region of the first lead frame 121 and is coupled to the support body 112 of the body 111.

The first recess 122 has a depth B4 in the range of 30 to 60% of the length B1 of the first lead frame 121 and has a depth B4 Stage structure. The height T4 of the first recess 122 may be equal to or less than 50% of the thickness T2 of the first lead frame 121 as a distance from the bottom surface 117 of the body 111 have.

The first recess 122 of the first lead frame 121 is divided into a region recessed from the gap portion 115 at a predetermined depth B4 in the direction of the first side portion 11 of the body 111 do. The upper thickness T5 of the first lead frame 121 in the region of the first recess 122 may range from 30 to 70% of the thickness T2 of the first lead frame 121, for example, 50% Or more. The thickness T5 may be equal to the thickness of the second protrusion 128 and the third protrusion 138. The depth B4 of the first recess 122 may be the same as or different from the length of the second protrusion 128 or the third protrusion 138.

The second recess 123 of the first lead frame 121 is adjacent to the first side 61 of the body 111 and below the first protrusion 126 the first lead area 125 And is coupled to a lower portion of the body 111, that is, The upper thickness T5 of the second lead frame 121 in the region of the second recess portion 123 is in the range of 30 to 70% of the thickness T2 of the first lead frame 121, for example, 50% Or more.

The second lead frame 131 includes third and fourth recessed portions 133 and 134 having a stepped structure below the fourth through sixth protrusions 136 and 137 and a third recessed portion 133 is formed in the third recessed portion 133 A supporting body 112 which is a lower portion of the body 111 is joined as a stepped region from the second lead region 135 of the second lead frame 131. [ The upper thickness T5 of the second lead frame 131 in the third recess portion 133 may be smaller than the thickness T2 of the second lead frame 131, For example, 50% or more of the thickness (T2) of the first electrode 131. The third recess portion 133 is an area in which the lower region of the second lead frame 131 is etched and the height of the third recess portion 133 is an interval between the second lead frame 131 and the lower surface 117 of the body 111, Of the thickness (T2) of the first electrode (131). The fourth recess portion 134 may be formed in a stepped structure below the fifth and sixth protrusions 137 and 138.

The top surface width or bottom surface area of the second lead frame 121 may be wider than the bottom width or bottom surface area.

The length B3 of the second recess 123 of the first lead frame 121 and the length C3 of the third recess 133 of the second lead frame 131 are equal to each other, And may be formed in a range of 0.8 μm or more, for example, 0.8 μm to 30 μm. The lengths B3 and C3 of the second and third recessed portions 123 and 133 may be a minimum thickness at which the support body 112 of the body 111 may not be damaged.

The length B4 of the first recess 122 in the lower region of the first lead frame 121 may be at least twice the length B3 of the second recess 123. [ The first recess portion 122 is spaced apart from the lower surface of the body 111 and the moisture penetration path to the upper surface of the first lead frame 121 on which the light emitting chip 171 is mounted Can be increased.

In addition, the second and third recesses 123 and 133 may be curved surfaces having a predetermined curvature at a bent portion. Such a curved surface may increase the contact area with the support body 112, You can increase the path. In addition, the first recess 122 may have a curved surface having a predetermined curvature at a bent portion adjacent to the first lead region 125.

A gap portion 115 is disposed in an area between the first lead frame 121 and the second lead frame 131. The gap portion 115 is formed in a space May be formed to be two times wider than the width at the bottom of the cavity.

The thickness T2 of the first and second lead frames 121 and 131 may be in the range of 0.15 mm to 0.8 mm, for example, in the range of 0.25 mm to 0.35 mm. The first lead frame 121 and the second lead frame 131 may be formed of a metal material such as titanium, copper, nickel, gold, chromium, tantalum, And may include at least one of tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), and phosphorous (P) and may be formed of a single metal layer or a multilayer metal layer. Thicknesses T2 of the first and second lead frames 121 and 131 have the same thickness, but the present invention is not limited thereto.

At least one light emitting chip 171 may be disposed on the first lead frame 121 and an adhesive may be disposed between the light emitting chip 171 and the second lead frame 131. The light emitting chip 171 may be disposed closer to the first inner side surface 11 than the second inner side surface 12 of the cavity 101. [ The center of the light emitting chip 171 may be disposed at a position different from the central axis Z0 of the light emitting element.

The adhesive may be a conductive adhesive or an insulating adhesive. In an embodiment, the light emitting chip 171 and the first lead frame 121 are bonded to each other with a conductive adhesive, and the first lead frame 121 and the light emitting chip 171 are electrically connected. The light emitting chip 171 may be electrically connected to the second lead frame 131 using a connecting member such as at least one wire 175.

The light emitting chip 171 can selectively emit light from a visible light band to an ultraviolet band, and can be selected from a red LED chip, a blue LED chip, a green LED chip, a yellow green LED chip, and a white LED chip . The light emitting chip 171 includes an LED chip including at least one of a compound semiconductor of Group III-V elements and a compound semiconductor of Group II-VII elements. One or more light emitting chips 171 may be disposed in the cavity 101, but the present invention is not limited thereto. The light emitting chip 171 may be a vertical type chip in which the anode and the cathode electrodes are vertically arranged or a flip chip in which the anode and the cathode electrodes are arranged in either one direction, It may be a balanced chip. The lateral length Y3 of the light emitting chip 171 may be in the range of 0.5 mm to 1.5 mm and the longitudinal length X3 may be in the range of 0.5 mm to 1.5 mm. I do not. The lengths of the light emitting chips 171 may be the same or different. The thickness of the light emitting chips 171 may be 100-300 μm.

The protection chip 173 is disposed on the second lead frame 131 and connected to the first lead frame 121 by a connection member such as a wire 176 or a conductive pattern. The protection chip 173 is embedded in the body 111 and is disposed outside the fifth inside surface 15 of the cavity 101. [ A wire 176 connected to the protection chip 173 may be disposed in the body 111 and may be partially exposed from the body 111. However, the present invention is not limited thereto.

3, the interval A3 between the fifth inner side face 15 of the cavity 101 and the corner portion of the body 111 may be in the range of 5 mm or more, for example, in the range of 5.82 to 6.59 mm, The gap A3 may provide a space in which the protective chip 173 can be bonded.

As another example, the protective chip 173 may be disposed in the body 111, which is an area outside the other area, for example, the sixth outer side 15 of the cavity 101, 5 inner side 15 and the sixth outer side 16 of the body. The protection chip 173 may be a chip such as a thyristor, a zener diode, or a TVS (Transient Voltage Suppression), but is not limited thereto.

A molding member 161 is disposed in the cavity 101 and the molding member 161 covers the light emitting chip 171. The molding member 161 includes a light-transmitting resin layer such as silicon or epoxy, and may be formed as a single layer or a multi-layer. The molding member 161 may include a phosphor for converting the wavelength of light emitted onto the light emitting chip 171. The phosphor may excite a part of the light emitted from the light emitting chip 171, And is emitted as light of a wavelength. The phosphor may be selectively formed from YAG, TAG, Silicate, Nitride, and Oxy-nitride based materials. The phosphor may include at least one of a red phosphor, a yellow phosphor, and a green phosphor, but the present invention is not limited thereto. The upper surface of the molding member 161 may have a flat shape, a concave shape, a convex shape, or the like, and may be a light output surface. A lens may be disposed on the molding member 161. The lens may include a convex lens with respect to the light emitting chip 171, a concave lens, and a convex lens having a total reflection surface in the central portion. Do not.

As another example, a phosphor layer may be further disposed on the molding member 161 and the light emitting chip 171, and the inner faces 11 to 16 of the cavity 101 and the light emitting chip 171 A molding member having a reflection characteristic between the side surfaces can be disposed. The reflective material includes a material having a property of reflecting 70% or more of the emission wavelength of the light emitting chip 171. The light-transmissive molding member may be disposed on the molding member having the reflection characteristic, but the invention is not limited thereto.

13 and 14 show another structure of Figs. 11 and 12, in which the first and fourth projections 126A and 136A of the first and second lead frames 131 are arranged in a single unit. The protrusions protruding from the first and second lead frames 131 may protrude one or more than one, but the invention is not limited thereto.

15 is a plan view showing a light emitting device according to the second embodiment. In describing the second embodiment, the same parts as those of the first embodiment will be described with reference to the first embodiment.

15, the light emitting device includes a body 111 having a cavity 101, a plurality of lead frames 121 and 131, a light emitting chip 171, a wire 175, and a molding member.

The first to sixth inner sides 11 to 16 of the cavity 101 may include a curved surface having at least one of edge areas between adjacent inner sides having a predetermined curvature. For example, the edge regions between the first and third inner side surfaces 11, 13 and the first and fourth inner side surfaces 11, 14 are connected by curved surfaces R5, R6 having a predetermined curvature The internal angle 7 between the first and third inner side surfaces 11 and 13 or between the first and fourth inner side surfaces 11 and 14 may be in the range of 88 to 92 degrees. The curvatures of the curved surfaces R5 and R6 include a range of 0.05 +/- 0.01 mm, and they may be formed to be equal to each other.

The third inner side surface 13 and the fifth inner side surface 15 of the cavity 101 and the edge area between the fourth inner side surface 14 and the sixth inner side surface 16 are curved surfaces having a predetermined curvature (14) and the sixth inner side (16), wherein the third inner side surface (13) and the fifth inner side surface (15) The internal angle [theta] 6 between the line segments can be formed in the range of 120 to 165 degrees. The curvatures of the curved surfaces R1 and R2 include a range of 0.80 ± 0.08 mm, and they may be formed to be equal to each other.

A corner region between the second inner side surface 12 and the fifth inner side surface 15 of the cavity 101 and between the second inner side surface 12 and the sixth inner side surface 16 is a curved surface having a predetermined curvature R3 and R4 between the first and second inner side surfaces 12 and 15 and between the extended virtual line segments for the plane of the second inner side surface 12 and the fifth inner side surface 15 or the second inner side surface 12 and the sixth inner side surface 16. [ 8 may be in the range of 110 to 160 degrees. The curvature between the curved surfaces R3 and R4 may be smaller than the curvature of the curved surfaces R1 and R2 and may be greater than the curvature of the curved surfaces R5 and R6.

The third inner side surface 13 and the fifth inner side surface 15 of the cavity 101 and the inflection point between the fourth inner side surface 14 and the sixth inner side surface 16 are located at the gap portion 115 And is formed on the adjacent first lead frame 121.

Here, the curved surfaces R1-R6 may be contours tangent to the bottom of the cavity 101, center portions of the corner areas, or contours tangent to the top surface of the body 111. [

Fig. 16 shows an example in which the light emitting element of Fig. 15 is modified. In the description of Fig. 16, the same parts as those of the first and second embodiments will be described with reference to the first and second embodiments.

16, the light emitting element has a third inner side surface 13 and a fifth inner side surface 15 of the cavity 101, and an edge between the fourth inner side surface 14 and the sixth inner side surface 16 The area is the inflection point R11, R12, and may be curved or angled. The inner angle? 61 between the third inner side surface 13 and the fifth inner side surface 15 of the cavity 101 and between the fourth inner side surface 14 and the sixth inner side surface 16 is 120 to 165 degrees . ≪ / RTI >

The inflection point between the third inner side surface 13 and the fifth inner side surface 15 of the cavity 101 of the cavity 101 or between the fourth inner side surface 14 and the sixth inner side surface 16 And may be formed in a region where the first lead frame 121 and the gap portion 115 are in contact with each other.

17 shows an example in which the light emitting element of Fig. 15 is modified. In the description of Fig. 17, the description of the first and second embodiments will be referred.

17, the light emitting device has a third inner side surface 13 and a fifth inner side surface 15 of the cavity 101, and an edge between the fourth inner side surface 14 and the sixth inner side surface 16, The portion is an inflection point R13, R14, and a curved surface or an angled surface can be formed. The inner angle? 62 between the third inner side surface 13 and the fifth inner side surface 15 of the cavity 101 and between the fourth inner side surface 14 and the sixth inner side surface 16 is in the range of 120 to 165 degrees As shown in FIG.

The inflection points R13 and R14 between the third inner side surface 13 and the fifth inner side surface 15 of the cavity 101 and between the fourth inner side surface 14 and the sixth inner side surface 16 are the same as the above- And may be disposed in the gap portion 115 between the first lead frame 121 and the second lead frame 131. The inflection points R13 and R14 are separated from the horizontal line segment of the second side portion 12 of the body 111 by a predetermined distance A22 and the distance A22 is longer than the length of the second lead frame 131 It can be longer. As another example, the inflection points R13 and R14 may be disposed on the second lead frame 131 adjacent to the gap portion 115 or formed on the boundary portion between the gap portion 115 and the second lead frame 131 .

16 and 17, the embodiment includes an inner side surface 15,16 connected between the second inner side surface 12 of the cavity 101 and the third and fourth inner side surfaces 13,14. May be connected to one or a plurality of planes or curved surfaces, and may include a straight line section in some sections.

18 is a plan view showing a light emitting device according to the third embodiment. In describing the third embodiment, the same parts as those of the first embodiment will be described with reference to the first embodiment.

18, the light emitting device has a structure in which the inner side surfaces 15A, 16A connecting the second inner side surface 12 of the cavity 101 and the third and fourth inner side surfaces 13, But may be formed only with curved surfaces R15 and R16 having a predetermined curvature.

19 is a plan view of a light emitting device according to the fourth embodiment. In describing the fourth embodiment, the same parts as those of the first embodiment will be described with reference to the first embodiment.

19, the light emitting device includes a plurality of inner surfaces 21 to 28 in a cavity 101 of a body 111, and two or more inner surfaces among the plurality of inner surfaces 21 to 28 are light emitting Corresponds to one side 171A of the chip 171.

The inner side surfaces 21 to 28 of the cavity 101 have first and second inner surfaces 21 and 22 corresponding to each other and third and fourth inner surfaces 21 and 22 adjacent to the first inner surface 21, And a fourth inner side surface (25, 26) formed between the third inner side surface (23) and the second inner side surface (22) Between the inner side surface 24 and the second inner side surface 22, the seventh and eighth inner side surfaces 27, 28 are formed.

The angles? 9,? 10 and? 11 bent from the third inner side surface 23 or the fourth inner side surface 24 to the second inner side surface 22 may be different from each other, theta] 10, [theta] 11) may be formed in the range of 100 to 170 degrees.

The lengths E3 and E4 of the fifth inner side surface 25 or the seventh inner side surface 24 and the sixth inner side surface 26 or the eighth inner side surface 28 may be equal to or different from each other, For example, the length E4 of the seventh or eighth inner side 27,28 may be longer than the length E3 of the fifth or sixth inner side 25,26, but is not limited thereto. Further, the corner portion between the inner surfaces 21 to 28 of the cavity 101 may be a curved surface or an angled surface, but is not limited thereto.

20 is a side sectional view showing a light emitting device according to the fifth embodiment. In describing the fifth embodiment, the same parts as those of the first embodiment will be described with reference to the first embodiment.

20, at least one of the inner surfaces 31-37 of the cavity 101 of the body 111 includes a curved surface which is convex toward the center of the cavity 101. As shown in FIG. For example, the first and second inner side surfaces 31 and 32 and the third and fourth inner side surfaces 33 and 34 corresponding to each other are disposed, and the third inner side surface 33 and the second inner side surface A fifth inner side surface 35 having a convex curved surface R6 convex toward the center of the cavity 101 between the fourth inner side surface 34 and the second inner side surface 32, And a sixth inner side surface 36 having a curved surface R7 which is convex in the center direction of the second inner side surface 36a. The fifth and sixth inner side surfaces 35 and 36 may be formed as inclined surfaces with respect to the thickness direction of the body 111, or may be formed as a rectangular surface, but the present invention is not limited thereto.

The fifth and sixth inner side surfaces 35 and 36 of the cavity 101 protrude in the center direction of the cavity 101 so that the width D21 of the second inner side surface 32 of the cavity 101, Can be formed longer than in the first embodiment. It is effective to secure a space on which the protection chip 173 can be mounted. The gap between the fifth and sixth inner side surfaces 35 and 36 is gradually narrowed, thereby effectively reflecting the light emitted from the light emitting chip 171.

21 is a side sectional view showing a light emitting device according to the fifth embodiment. The structure of the cavity 101 of the light emitting device of FIG. 21 may include any one of the structures shown in the first to fourth embodiments, and the same portions will be described with reference to the description of the above embodiments.

21, the phosphor layer 181 is disposed on the light emitting chip 171, the phosphor is not added in the molding member 161, or the phosphor added to the phosphor layer 181 is different from the phosphor Can be added.

The phosphor layer 181 may have a smaller area than the upper surface area of the light emitting chip 171 or may be formed on the upper surface and the side surface of the light emitting chip 171. However, The phosphor layer 181 may include at least one of blue, red, yellow and green phosphors.

Further, the second lead frame 131 may be further formed in a region corresponding to the gap portion 115 of the fourth recess portion 133, but the present invention is not limited thereto. The center of the light emitting chip 171 may be disposed at a position different from the central axis Z0 of the light emitting element.

 22 is a side sectional view showing a light emitting device according to the sixth embodiment. The structure of the cavity 101 of the light emitting device of FIG. 22 may include any one of structures shown in the first to fourth embodiments, and the same portions will be described with reference to the description of the embodiments.

22, the light emitting device includes a light emitting chip 171 disposed on at least one of the first lead frame 121 and the second lead frame 131, and the light emitting chip 171 is disposed within the cavity 101 .

The cavity 101 is formed with a first molding member 161A having a lower height than the upper surface of the light emitting chip 171 and a molding member 161A disposed on the light emitting chip 171 and the first molding member 161A 161B. The first and second molding members 161A and 161B may include a metal oxide and may include, for example, the same metal oxide or different metal oxide.

The first molding member 161A includes a first metal oxide, and the second molding member 161B includes a second metal oxide. The first metal oxide is _{SiO 2, SiO x, SiO x} N y, Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ Among and includes one, wherein the second metal oxide is _{SiO 2, SiO x, SiO x} N y, Si ₃ N ₄ , Al ₂ O ₃ , and TiO ₂ .

The first metal oxide may be added in the range of 7.5 to 12.5 wt% in the first molding member 161A. Accordingly, the first molding member 161A functions as a reflective layer disposed around the light emitting chip 171. By making the first molding member 161A function as a reflection layer, it is possible to compensate for the deviation of the directivity angle distributions of the light emitted from the cavity 101 having an asymmetrical structure disclosed in the above embodiment. 24 is a distribution of directivity angles when the reflective first molding member 16A is not present in the cavity of the light emitting device, and FIG. 25 is a graph showing the distribution of directivity when the reflective first molding member 16A is disposed in the cavity of the light emitting device. Fig. The difference between the directivity distribution of the first axis YY and the directivity distribution of the second axis XX of Fig. 1 in the side zone Z1 is reduced to 2 degrees or less, as shown in the comparison charts of Figs. 24 and 25 .

The second metal oxide may be added in the range of 7.5 to 12.5 wt% in the second molding member. Whereby the second molding member can function as a diffusion layer on the light emitting chip.

Although not shown in the embodiment, a phosphor layer may be disposed between the light emitting chip and the second molding member, or a phosphor may be added in the second molding member.

23 is a side sectional view showing a light emitting device according to the seventh embodiment. The structure of the cavity 101 of the light emitting device in FIG. 23 may include any one of the structures shown in the first to fourth embodiments, and the same portions will be described with reference to the description of the above embodiments.

23, the bottom of the cavity 101 of the body 111 may be formed in a plane in which the area where the light emitting chip 171 is disposed and the area where the light emitting chip 171 is not disposed are different from each other . For example, the upper surface of the first lead frame 121 on which the light emitting chip 171 is mounted and the upper surface of the second lead frame 131 spaced apart from the light emitting chip 171 are arranged on different planes. The upper surface of the second lead frame 131 is disposed higher than the upper surface of the first lead frame 121 by a predetermined gap G2 and the gap between the first and second lead frames 121 and 131 115 to support the first and second lead frames 121, 131.

The upper surface of the second lead frame 131 may have a height difference G2 between the upper surfaces of the first lead frames 121 that is 50% or less of the thickness T2 of the first lead frame 121, % ≪ / RTI >

The second lead frame 131 includes a bonding portion 125B disposed at the bottom of the cavity and a lead region 135A disposed at the bottom of the body. The lead region 135A may be bent from the bonding portion 125B.

The gap portion 115A between the first and second lead frames 121 and 131 may be formed as a sloped surface 115B corresponding to the light emitting chip 171, The light emitted from the light emitting chip 171 can be effectively reflected. The height H2 of the cavity 101 on the second inner side surface 12 of the cavity 101 is equal to the height H1 of the cavity 101 on the first inner side 11 of the cavity 101 ). ≪ / RTI >

The phosphor layer 181 may be disposed on the light emitting chip 171 and the phosphor layer 181 may be disposed on the upper surface or the upper surface and the side surface of the light emitting chip 171. However,

26 is a side sectional view showing an example of a light emitting chip according to the embodiment.

Referring to FIG. 26, the light emitting chip includes a substrate 311, a buffer layer 312, a light emitting structure 310, a first electrode 316, and a second electrode 317. The substrate 311 includes a substrate of a light-transmitting or non-light-transmitting material, and also includes a conductive or insulating substrate.

The buffer layer 312 reduces the lattice constant difference between the substrate 311 and the material of the light emitting structure 310, and may be formed of a nitride semiconductor. A nitride semiconductor layer not doped with a dopant may be further formed between the buffer layer 312 and the light emitting structure 310 to improve crystal quality.

The light emitting structure 310 includes a first conductive semiconductor layer 313, an active layer 314, and a second conductive semiconductor layer 315.

The first conductivity type semiconductor layer 313 is formed of a Group III-V compound semiconductor doped with a first conductivity type dopant, and the first conductivity type semiconductor layer 313 is formed of In _x Al _y Ga _{1 -x- y} N (0? x? 1, 0? y? 1, 0? x + y? 1). The first conductive semiconductor layer 313 may be a stacked structure of layers including at least one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, . ≪ / RTI > The first conductive type semiconductor layer 313 is an n-type semiconductor layer, and the first conductive type dopant is an n-type dopant including Si, Ge, Sn, Se, and Te.

A first clad layer may be formed between the first conductive semiconductor layer 313 and the active layer 314. [ The first clad layer may be formed of a GaN-based semiconductor, and the band gap of the first clad layer may be greater than a bandgap of the active layer 314. The first cladding layer is formed in the first conductivity type and serves to constrain carriers.

The active layer 314 is disposed on the first conductive semiconductor layer 313 and selectively includes a single quantum well, a multiple quantum well (MQW), a quantum wire structure, or a quantum dot structure. do. The active layer 314 includes a well layer and a barrier layer period. The well layer comprises a composition formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1), and wherein the barrier layer is In _x Al _y And Ga _1-xy N (0? X? 1, 0? Y? 1, 0? X + y? 1). The period of the well layer / barrier layer may be one or more cycles using a lamination structure of, for example, InGaN / GaN, GaN / AlGaN, InGaN / AlGaN, InGaN / InGaN, and InAlGaN / InAlGaN. The barrier layer may be formed of a semiconductor material having a band gap higher than a band gap of the well layer.

A second conductive semiconductor layer 315 is formed on the active layer 314. The second conductive semiconductor layer 315 may include a semiconductor doped with a second conductive dopant, such as In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y ? 1, y? 1). The second conductive semiconductor layer 315 may be formed of any one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP. The second conductivity type semiconductor layer 315 may be a p-type semiconductor layer, and the second conductivity type dopant may include Mg, Zn, Ca, Sr, and Ba as a p-type dopant.

The second conductive semiconductor layer 315 may include a superlattice structure, and the superlattice structure may include an InGaN / GaN superlattice structure or an AlGaN / GaN superlattice structure. The superlattice structure of the second conductivity type semiconductor layer 315 may protect the active layer 314 by diffusing a current contained in the voltage abnormally.

The first conductivity type semiconductor layer 313 may be a p-type semiconductor layer, and the second conductivity type semiconductor layer 315 may be an n-type semiconductor layer. can do. A first conductive semiconductor layer having a polarity opposite to that of the second conductive type may be further disposed on the second conductive type semiconductor layer 315.

The light emitting structure 310 may have any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure. Here, p is a p-type semiconductor layer, and n is an n-type semiconductor layer, and the - includes a structure in which the p-type semiconductor layer and the n-type semiconductor layer are in direct contact or indirect contact. Hereinafter, for convenience of explanation, the uppermost layer of the light emitting structure 310 will be described as the second conductive type semiconductor layer 315.

A first electrode 316 is disposed on the first conductive type semiconductor layer 313 and a second electrode 317 having a current diffusion layer is disposed on the second conductive type semiconductor layer 315. The first and second electrodes 316 and 317 may be connected by wires or by other connection methods.

27 is a view showing another example of the light emitting chip according to the embodiment. In describing the embodiment, the same parts as those in Fig. 26 are omitted and briefly explained.

Referring to FIG. 27, a light emitting chip according to an embodiment includes a contact layer 321 formed under the light emitting structure 310, a reflective layer 324 formed under the contact layer 321, And a passivation layer 323 may be formed around the reflective layer 324 and the light emitting structure 310. [

The first electrode 316 disposed on the light emitting structure 310 may include one or a plurality of pads to which wires are bonded.

The light emitting chip may be formed by forming a contact layer 321, a protective layer 323, a reflective layer 324, and a supporting member 325 under the second conductive type semiconductor layer 315, have.

The contact layer 321 is in ohmic contact with the lower layer of the light emitting structure 310, for example, the second conductivity type semiconductor layer 315. The material of the contact layer 321 may be selected from a metal oxide, a metal nitride, an insulating material, (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO) a material selected from the group consisting of an oxide, an antimony tin oxide (ATO), a gallium zinc oxide (GZO), Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, . In addition, the metal material and the light transmitting conductive material such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, and ATO can be used in a multilayer structure. For example, IZO / Ni, AZO / Ag, IZO / / Ag / Ni or the like. The contact layer 321 may further include a current blocking layer to correspond to the electrode 316.

The protective layer 323 may be selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO) (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), SiO 2, SiO x, SiO x N y, Si ₃ N ₄ , Al ₂ O ₃ , and TiO ₂ . The protective layer 323 may be formed using a sputtering method, a deposition method, or the like, and metal such as the reflective layer 324 may prevent the layers of the light emitting structure 310 from being short-circuited.

The reflective layer 324 may be formed of a material selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf and combinations thereof. The reflective layer 324 may be formed to have a width larger than the width of the light emitting structure 310, which may improve the light reflection efficiency. A metal layer for bonding and a metal layer for thermal diffusion may be further disposed between the reflective layer 324 and the support member 325, but the present invention is not limited thereto.

The support member 325 may be a base substrate made of a metal such as copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), copper-tungsten (Cu- Si, Ge, GaAs, ZnO, SiC). A bonding layer may be further formed between the supporting member 325 and the reflective layer 324, and the bonding layer may bond the two layers together. The above-described light emitting chip is merely an example, and is not limited to the features disclosed above. The light emitting chip may be selectively applied to the light emitting device, but the present invention is not limited thereto.

<Lighting system>

The light emitting device or the light emitting device according to the embodiment can be applied to the illumination system. The lighting system includes a structure in which a plurality of light emitting elements are arrayed, and includes a display device shown in Figs. 28 and 29, a lighting device shown in Fig. 30, and may include an illumination lamp, a traffic light, a vehicle headlight, have.

28 is an exploded perspective view of a display device having a light emitting element according to an embodiment.

28, a display device 1000 according to an embodiment includes a light guide plate 1041, a light source module 1031 for providing light to the light guide plate 1041, and a reflection member 1022 An optical sheet 1051 on the light guide plate 1041 and a display panel 1061 on the optical sheet 1051 and the light guide plate 1041 and the light source module 1031 and the reflection member 1022 But is not limited to, a bottom cover 1011.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 serves to diffuse light into a surface light source. The light guide plate 1041 may be made of a transparent material such as acrylic resin such as polymethyl methacrylate (PET), polyethylene terephthalate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate Resin. &Lt; / RTI &gt;

The light source module 1031 provides light to at least one side of the light guide plate 1041, and ultimately acts as a light source of the display device.

The light source module 1031 includes at least one light source module 1031 and may directly or indirectly provide light from one side of the light guide plate 1041. The light source module 1031 includes a substrate 1033 and a light emitting device or a light emitting device 1035 according to the embodiment described above and the light emitting device or the light emitting device 1035 is mounted on the substrate 1033 at a predetermined interval . &Lt; / RTI &gt;

The substrate 1033 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the substrate 1033 may include not only a general PCB, but also a metal core PCB (MCPCB), a flexible PCB (FPCB), and the like. When the light emitting element 1035 is mounted on the side surface of the bottom cover 1011 or on the heat radiation plate, the substrate 1033 can be removed. Here, a part of the heat radiating plate may be in contact with the upper surface of the bottom cover 1011.

The plurality of light emitting devices 1035 may be mounted on the substrate 1033 such that the light emitting surface is spaced apart from the light guiding plate 1041 by a predetermined distance. However, the present invention is not limited thereto. The light emitting device 1035 may directly or indirectly provide light to the light-incident portion, which is one surface of the light guide plate 1041, but the present invention is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflection member 1022 reflects the light incident on the lower surface of the light guide plate 1041 so as to face upward, thereby improving the brightness of the light unit 1050. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light source module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, including first and second transparent substrates facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. Such a display device 1000 can be applied to various types of portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet condenses incident light into a display area. The brightness enhancing sheet improves the brightness by reusing the lost light. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

Here, the optical path of the light source module 1031 may include the light guide plate 1041 and the optical sheet 1051 as an optical member, but the invention is not limited thereto.

29 is a view showing a display device having a light emitting element according to an embodiment.

29, the display device 1100 includes a bottom cover 1152, a substrate 1120 on which the above-described light emitting device 1124 is arrayed, an optical member 1154, and a display panel 1155.

The substrate 1120 and the light emitting device 1124 may be defined as a light source module 1160. The bottom cover 1152, the at least one light source module 1160, and the optical member 1154 may be defined as a light unit 1150. The bottom cover 1152 may include a receiving portion 1153, but the present invention is not limited thereto. The light source module 1160 includes a substrate 1120 and a plurality of light emitting devices or light emitting devices 1124 arranged on the substrate 1120.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of PC material or PMMA (poly methyl methacrylate), and the light guide plate may be removed. The diffusion sheet diffuses incident light, and the horizontal and vertical prism sheets condense incident light into a display area. The brightness enhancing sheet enhances brightness by reusing the lost light.

The optical member 1154 is disposed on the light source module 1160 and performs surface light source, diffusion, and light condensation of light emitted from the light source module 1160.

30 is an exploded perspective view of a lighting apparatus having a light emitting element according to the embodiment.

30, the lighting apparatus according to the embodiment includes a cover 2100, a light source module 2200, a heat discharger 2400, a power supply unit 2600, an inner case 2700, and a socket 2800 . Further, the illumination device according to the embodiment may further include at least one of the member 2300 and the holder 2500. The light source module 2200 may include a light emitting device or a light emitting device package according to the embodiment.

For example, the cover 2100 may have a shape of a bulb or a hemisphere, and may be provided in a shape in which the hollow is hollow and a part is opened. The cover 2100 may be optically coupled to the light source module 2200 and may be coupled to the heat discharger 2400. The cover 2100 may have a recess portion to be coupled with the heat discharging body 2400.

The inner surface of the cover 2100 may be coated with a milky white paint having a diffusion material. The light from the light source module 2200 can be scattered and diffused to emit to the outside using the milky white material.

The cover 2100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 2100 may be transparent so that the light source module 2200 is visible from the outside, and may be opaque. The cover 2100 may be formed by blow molding.

The light source module 2200 may be disposed on one side of the heat discharging body 2400. Accordingly, heat from the light source module 2200 is conducted to the heat discharger 2400. The light source module 2200 may include a light emitting device 2210, a connection plate 2230, and a connector 2250.

The member 2300 is disposed on the upper surface of the heat discharging body 2400 and has guide grooves 2310 into which a plurality of illumination elements 2210 and a connector 2250 are inserted. The guide groove 2310 corresponds to the substrate of the illumination device 2210 and the connector 2250.

The surface of the member 2300 may be coated or coated with a white paint. The member 2300 reflects the light reflected by the inner surface of the cover 2100 toward the cover 2100 in the direction toward the light source module 2200. Therefore, the light efficiency of the illumination device according to the embodiment can be improved.

The member 2300 may be made of an insulating material, for example. The connection plate 2230 of the light source module 2200 may include an electrically conductive material. Therefore, electrical contact can be made between the heat discharging body 2400 and the connecting plate 2230. The member 2300 may be formed of an insulating material to prevent an electrical short circuit between the connection plate 2230 and the heat discharging body 2400. The heat discharger 2400 receives heat from the light source module 2200 and heat from the power supply unit 2600 to dissipate heat.

The holder 2500 blocks the receiving groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 housed in the insulating portion 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510. The guide protrusion 2510 may have a hole through which the protrusion 2610 of the power supply unit 2600 passes.

The power supply unit 2600 processes or converts an electrical signal provided from the outside and provides the electrical signal to the light source module 2200. The power supply unit 2600 is housed in the receiving groove 2719 of the inner case 2700 and is sealed inside the inner case 2700 by the holder 2500.

The power supply unit 2600 may include a protrusion 2610, a guide 2630, a base 2650, and an extension 2670.

The guide portion 2630 has a shape protruding outward from one side of the base 2650. The guide portion 2630 may be inserted into the holder 2500. A plurality of components may be disposed on one side of the base 2650. The plurality of components may include, for example, a DC converter, a driving chip for controlling driving of the light source module 2200, an ESD (ElectroStatic discharge) protection device for protecting the light source module 2200, The present invention is not limited thereto.

The extension portion 2670 has a shape protruding outward from the other side of the base 2650. The extension portion 2670 is inserted into the connection portion 2750 of the inner case 2700 and receives an external electrical signal. For example, the extension portion 2670 may be provided to be equal to or smaller than the width of the connection portion 2750 of the inner case 2700. The extension 2670 may be electrically connected to the socket 2800 through a wire.

The inner case 2700 may include a molding part together with the power supply part 2600. The molding part is a hardened portion of the molding liquid so that the power supply unit 2600 can be fixed inside the inner case 2700.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Will be clear to those who have knowledge of. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

11-16, 21-28, 31-36, 15A, 16A: inner side
61-64:
101: cavity
111: Body
121, 131: Lead frame
122, 123, 133:
125, 135:
161, 161A and 161B:
171: Light emitting chip
173: Protective chip
181: phosphor layer

Claims (23)

A body having a cavity including a plurality of inner sides;
A first lead frame disposed at the bottom of the cavity;
A second lead frame disposed at the bottom of the cavity; And
And a light emitting chip disposed on the first lead frame,
Wherein the cavity has a first inner side adjacent to the light emitting chip, a second inner side opposite to the first inner side, and a third inner side and a fourth inner side, which are connected to the first inner side, A fifth inner surface disposed between the second inner surface and the third inner surface, and a sixth inner surface disposed between the second inner surface and the fourth inner surface,
The fifth inner side surface and the sixth inner side surface are not parallel to the first inner side surface to the fourth inner side surface,
The width of the first inner side surface is larger than the width of the second inner side surface,
An inner angle between the fifth inner side surface and the third inner side surface, and an inner angle between the sixth inner side surface and the fourth inner side surface is an obtuse angle,
The inner angle between the second inner side surface and the fifth inner side surface and the inner angle between the second inner side surface and the sixth inner side surface are obtuse,
The body includes a support body disposed under the first lead frame and the second lead frame, a reflective body disposed on the first lead frame and the second lead frame, And a gap portion which is disposed between the first electrode and the second electrode,
Wherein the first lead frame extends below the first inner side, the third inner side and the fourth inner side,
And the second lead frame extends below the second inner side surface, the fifth inner side surface, and the sixth inner side surface. The method according to claim 1,
Wherein the first lead frame includes a first recess portion recessed from the gap portion to a predetermined depth in the direction of the first side surface of the body,
And the first lead frame includes a second recess portion adjacent to the first side portion of the body and coupled with the support body. 3. The method of claim 2,
Wherein the first inner side surface and the second inner side surface are parallel to each other,
The third inner side surface and the fourth inner side surface are parallel to each other,
Wherein the third inner side surface and the fourth inner side surface are formed in a direction orthogonal to the first inner side surface and the second inner side surface. The method of claim 3,
Wherein a width of the second inner side surface is smaller than a width of the light emitting chip. The method according to claim 3 or 4,
Wherein a width of the fifth inner side surface or the sixth inner side surface is smaller than a width of the first inner side surface and larger than a width of the second inner side surface. The method of claim 3,
Wherein the width of the second inner side is narrower than the width of the first inner side by 2.5 to 3.5 times. The method according to claim 6,
And an inflection point between the third inner side surface and the fifth inner side surface and an inflection point between the fourth inner side surface and the sixth inner side surface are disposed on the first lead frame. The method according to claim 6,
And an inflection point between the third inner side surface and the fifth inner side surface and an inflection point between the fourth inner side surface and the sixth inner side surface are disposed in the gap portion. 9. The method of claim 8,
A first molding member disposed around the light emitting chip among the regions in the cavity and having a first metal oxide; And a second molding member having a second metal oxide different from the first metal oxide and disposed on the light emitting chip and the first molding member. 9. The method of claim 8,
And a protective chip disposed on the second lead frame and disposed in the body,
And the protection chip is disposed adjacent to the fifth inner side surface. delete delete delete delete delete delete delete delete delete delete delete delete delete

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