JP6442177B2 - Light emitting element - Google Patents

Description

  Embodiments relate to a light emitting device.

  Light emitting devices such as light emitting diodes and laser diodes using a semiconductor group 3-5 or 2-6 compound semiconductor material are red, green, blue and ultraviolet rays due to the development of thin film growth technology and device materials. It is possible to implement various colors, such as fluorescent materials, and by combining colors, it is possible to implement efficient white light, which is lower than existing light sources such as fluorescent and incandescent lamps. It has advantages such as power consumption, semi-permanent lifetime, fast response speed, safety and environmental friendliness.

  Therefore, a transmission module of optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, a fluorescent lamp or an incandescent lamp is substituted. Its application has been extended to white light-emitting diode illuminating devices, automobile headlights and signal lights.

  A light emitting element including a plurality of light emitting cells connected in series or in parallel has a bridge electrode that electrically connects adjacent light emitting cells. In a light-emitting element including a plurality of light-emitting cells, there may be a problem of reliability such that the current is concentrated on a bridge electrode having a small area and the bridge electrode is burnt when the light-emitting element is operated.

  Embodiments seek to provide a light emitting device with improved reliability.

  A light emitting device according to an embodiment includes a plurality of light emitting cells; and a bridge electrode that electrically connects two adjacent light emitting cells, wherein the plurality of light emitting cells includes a first conductive semiconductor layer, A second conductive semiconductor layer, a light emitting structure including an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer, a first electrode on the first conductive semiconductor layer, and A second electrode on the second conductivity type semiconductor layer, and the bridge electrode has a portion thicker than the first electrode or the second electrode.

  The width of the bridge electrode may be larger than the width of the first electrode or the second electrode.

  The light emitting structure may include an etching region that is partially etched to expose the first conductive semiconductor layer, and the first electrode is disposed on the exposed first conductive semiconductor layer. it can.

  The bridge electrode includes a first portion that contacts the first electrode of one of the two adjacent light emitting cells, a second portion that contacts the second electrode of the other light emitting cell, the first portion, And a third portion between the second portion.

  The bridge electrode may have the largest thickness of the third portion.

  The third portion may be disposed between two adjacent light emitting cells.

  The bridge electrode may have the same height as the first electrode or the second electrode in the first portion or the second portion, respectively.

  There may be a plurality of the bridge electrodes.

  A part of the first part may be disposed on the first electrode, and a part of the second part may be disposed on the second electrode.

  The bridge electrode further includes a fourth part disposed between the first part and the third part and between the second part and the third part, and the thickness of the fourth part is It may be smaller than the thickness of each of the first part, the second part, or the third part.

  A light emitting device according to another embodiment includes: a plurality of light emitting cells; and a bridge electrode that electrically connects two adjacent light emitting cells; and the plurality of light emitting cells includes a first conductive semiconductor layer. , A second conductive semiconductor layer, and a light emitting structure including an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer, and the bridge electrode includes two adjacent light emitting cells. A first conductive semiconductor layer of one of the light emitting cells is electrically connected to a second conductive semiconductor layer of the other light emitting cell, and a plurality of bridge electrodes are provided between two adjacent light emitting cells. Exists.

  The plurality of light emitting cells each further include a first electrode on a first conductive type semiconductor layer and a second electrode on the second conductive type semiconductor layer, and the bridge electrode is one of two adjacent light emitting cells. A plurality of the light emitting cells may be spaced apart from each other between the first electrode of one of the light emitting cells and the second electrode of the other light emitting cell.

  The first electrode and the second electrode may have a longitudinal direction in a first direction, and the plurality of bridge electrodes may have the same longitudinal direction as the first direction, or different from the first direction. You may have the longitudinal direction of a 2nd direction.

  The plurality of bridge electrodes include a first part on the first conductive type semiconductor layer of one of the two adjacent light emitting cells and a second part on the second conductive type semiconductor layer of the other light emitting cell. A portion and a third portion between the first portion and the second portion.

  Each thickness of the first part or the second part may be the same as the thickness of the third part.

  Each of the plurality of bridge electrodes may be wider than the first electrode or the second electrode.

  The light emitting device may further include: a substrate disposed under the plurality of light emitting cells; and first unevenness formed in a region of an upper surface of the substrate located between adjacent light emitting cells. it can.

  The third portion of the bridge electrode is disposed on the region of the upper surface of the substrate located between the adjacent light emitting cells, and the first unevenness is formed on the upper surface of the third portion of the bridge electrode. 2nd unevenness | corrugation corresponding to can be formed.

  The height of the upper surface of the third portion of the bridge electrode with respect to the upper surface of the substrate may be lower than or the same as the height of the upper surface of the first portion of the bridge electrode.

  According to the embodiment, a light-emitting element with improved reliability can be manufactured by improving the phenomenon of current concentration on the bridge electrode. Also, the efficiency can be improved by reducing the resistance at the high resistance portion.

It is a top view of the light emitting element concerning a 1st embodiment. It is a top view which expands and shows a part of FIG. It is sectional drawing which cut | disconnected FIG. 2 in the AA direction and was seen from the front. It is a top view which expands and shows a part of light emitting element which concerns on 2nd Embodiment. It is a top view which expands and shows a part of light emitting element which concerns on 3rd Embodiment. It is a top view which expands and shows a part of light emitting element concerning 4th Embodiment. It is sectional drawing which cut | disconnected FIG. 6 in the AA direction and was seen from the front. It is a sectional side view of a part of the light emitting device according to the fifth embodiment. It is a sectional side view of a part of the light emitting device according to the sixth embodiment. It is a top view of the light emitting element concerning a 7th embodiment. It is a top view which expands and shows a part of FIG. It is sectional drawing which cut | disconnected FIG. 11 in the BB direction and was seen from the front. It is a sectional side view of a part of the light emitting device according to the eighth embodiment. It is a sectional side view of a part of the light emitting device according to the ninth embodiment. It is a top view of the light emitting element concerning a 10th embodiment. It is a top view which expands and shows a part of FIG. It is sectional drawing which cut | disconnected FIG. 16 in the BB direction. It is a sectional side view of a part of the light emitting device according to the eleventh embodiment. It is sectional drawing of the light emitting element which concerns on 12th Embodiment. It is sectional drawing of the light emitting element which concerns on 13th Embodiment. It is a figure which shows one Embodiment of the light emitting element package containing the light emitting element which concerns on embodiment. It is a figure which shows one Embodiment of the headlamp by which the light emitting element or light emitting element package which concerns on embodiment is arrange | positioned. It is a figure which shows one Embodiment of the display apparatus by which the light emitting element package which concerns on embodiment is arrange | positioned.

  Hereinafter, each embodiment will become clear through the accompanying drawings and description of each embodiment. In the description of the embodiments, each layer (film), region, pattern, or structure is “on” or “under” the substrate, each layer (film), region, pad, or pattern. In the case described as being formed, “upper / upper” (on) and “lower / lower” are formed “directly” or “indirectly”. Including everything. The reference for the upper / upper or lower / lower of each layer will be described with reference to the drawings.

  In the drawings, the size is exaggerated, omitted, or schematically shown for convenience and clarity of description. Also, the size of each component does not necessarily accurately reflect the actual size. The same reference numerals denote the same elements throughout the drawings.

  1 is a plan view of the light emitting device according to the first embodiment, FIG. 2 is an enlarged plan view showing a part of FIG. 1, and FIG. 3 is a front view of FIG. 2 cut in the AA direction. It is sectional drawing seen from.

  Referring to FIGS. 1 to 3, the light emitting device 200 </ b> A according to the first embodiment includes a plurality of light emitting cells 100 and a bridge electrode that electrically connects two adjacent light emitting cells 100. electrode) 150.

  The plurality of light emitting cells 100 include LEDs (Light Emitting Diodes) using a plurality of compound semiconductor layers, for example, a semiconductor layer of a group 3-5 group or a group 2-6 group element. It may be a colored LED that emits light such as red, or may be a white LED or a UV LED. The emitted light of the LED can be embodied in various ways by changing the kind and concentration of the material forming the semiconductor layer, but is not limited thereto.

  A substrate 110 is disposed below the plurality of light emitting cells 100. The plurality of light emitting cells 100 are supported by the substrate 110 and are spaced apart from each other on the substrate 110.

The substrate 110 can be formed using a material suitable for growth of a semiconductor material or a material having excellent thermal conductivity. As the substrate 110, for example, at least one of sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge, and Ga ₂ O ₃ can be used. The substrate 110 can be subjected to wet cleaning or plasma treatment to remove surface impurities.

  The plurality of light emitting cells 100 includes a first conductive semiconductor layer 122, a second conductive semiconductor layer 126, and an active layer 124 between the first conductive semiconductor layer 122 and the second conductive semiconductor layer 126. A first electrode 130 on the first conductive type semiconductor layer 122, and a second electrode 140 on the second conductive type semiconductor layer 126.

  The light emitting structure 120 may be formed by, for example, metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), or plasma-enhanced chemical vapor deposition (PECVD). It can be formed using a method such as a line growth method (MBE), a hydride vapor phase epitaxy (HVPE), or the like, but is not limited thereto.

  The first conductivity type semiconductor layer 122 can be formed of a semiconductor compound, and can be formed of a compound semiconductor such as a group 3-5 group or a group 2-6 group. Moreover, the 1st conductivity type dopant may be doped. When the first conductive semiconductor layer 122 is an n-type semiconductor layer, the first conductive dopant may include Si, Ge, Sn, Se, Te, etc. as an n-type dopant, but is not limited thereto. Not. When the first conductive semiconductor layer 122 is a p-type semiconductor layer, the first conductive dopant may include Mg, Zn, Ca, Sr, Ba, etc. as a p-type dopant, but is not limited thereto. Not.

The first conductivity type semiconductor layer 122 includes a semiconductor material having a composition formula of Al _x In _y Ga _(1-xy) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). be able to. The first conductive semiconductor layer 122 may include at least one element of Ga, N, In, Al, As, and P, and includes GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, It can be formed of any one or more of InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, and InP.

  The second conductivity type semiconductor layer 126 can be formed of a semiconductor compound, for example, can be formed of a compound semiconductor such as a group 3-5 group or a group 2-6 group. Moreover, the 2nd conductivity type dopant may be doped. When the second conductive semiconductor layer 126 is a p-type semiconductor layer, the second conductive dopant may include Mg, Zn, Ca, Sr, Ba, etc. as a p-type dopant, but is not limited thereto. . When the second conductive semiconductor layer 126 is an n-type semiconductor layer, the second conductive dopant may include Si, Ge, Sn, Se, Te, etc. as an n-type dopant, but is not limited thereto. .

The second conductivity type semiconductor layer 126 includes a semiconductor material having a composition formula of Al _x In _y Ga _(1-xy) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). be able to. The second conductive semiconductor layer 126 may include at least one element of Ga, N, In, Al, As, and P, and includes GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, It can be formed of any one or more of InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, and InP.

  Hereinafter, a case where the first conductive semiconductor layer 122 is an n-type semiconductor layer and the second conductive semiconductor layer 126 is a p-type semiconductor layer will be described as an example.

  On the second conductivity type semiconductor layer 126, a semiconductor having a polarity opposite to that of the second conductivity type, for example, when the second conductivity type semiconductor layer 126 is a p type semiconductor layer, an n type semiconductor layer (not shown). Can be formed. Accordingly, the light emitting structure can be implemented by any one of an np junction structure, a pn junction structure, an npn junction structure, and a pnp junction structure.

  An active layer 124 is disposed between the first conductive semiconductor layer 122 and the second conductive semiconductor layer 126.

  The active layer 124 is a layer that emits light having an energy determined by an energy band specific to an active layer (light emitting layer) material when electrons and holes meet. When the first conductivity type semiconductor layer 122 is an n-type semiconductor layer and the second conductivity type semiconductor layer 126 is a p-type semiconductor layer, electrons are injected from the first conductivity type semiconductor layer 122 and the second conductivity type. Holes can be injected from the semiconductor layer 126.

The active layer 124 may be formed of at least one of a single well structure, a multi-well structure, a quantum wire (Quantum-Wire) structure, and a quantum dot (Quantum Dot) structure. For example, the active layer 124 may be formed by injecting trimethylgallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and trimethylindium gas (TMIn) to form a multiple quantum well structure. Although it is good, it is not limited to this.

  When the active layer 124 is formed in a multi-well structure, the well layer / barrier layer of the active layer 124 includes InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, and GaP (InGaP). ) / AlGaP, but it is not limited to this. The well layer may be formed of a material having a band gap smaller than that of the barrier layer.

  A buffer layer 112 may be disposed between the light emitting structure 120 and the substrate 110. The buffer layer 112 is for reducing a lattice mismatch and a difference in thermal expansion coefficient between the materials of the light emitting structure 120 and the substrate 110. The material of the buffer layer 112 may be a group 3-5 group or a group 2-6 group compound semiconductor. For example, the buffer layer 112 may be formed of at least one of GaN, InN, AlN, InGaN, InAlGaN, and AlInN. it can.

  An undoped semiconductor layer 114 may be disposed between the substrate 110 and the first conductivity type semiconductor layer 122. The undoped semiconductor layer 114 is a layer formed for improving the crystallinity of the first conductivity type semiconductor layer 122 and may be formed of the same material as the first semiconductor layer 122 or a different material from the first semiconductor layer 122. it can. The undoped semiconductor layer 114 exhibits lower electrical conductivity than the first conductivity type semiconductor layer 122 because the first conductivity type dopant is not doped. The undoped semiconductor layer 114 may be disposed on the buffer layer 112 in contact with the first conductivity type semiconductor layer 122. The undoped semiconductor layer 114 grows at a temperature higher than the growth temperature of the buffer layer 112 and exhibits better crystallinity than the buffer layer 112.

  According to the embodiment, the light emitting structure 120 may include an inclined surface on the side surface. When the side surface of the light emitting structure 120 includes an inclined surface, the side surface that is the inclined surface can form an obtuse angle with the substrate 110.

  The light emitting structure 120 includes an etching region E that is partially etched to expose the first conductive semiconductor layer 122. That is, a part of the second conductive semiconductor layer 126, the active layer 124, and the first conductive semiconductor layer 122 of the light emitting structure 120 is selectively etched, and a part of the first conductive semiconductor layer 122 is exposed. The The first electrode 130 is disposed on the first conductive semiconductor layer 122 exposed by the etching region E, and the second electrode 140 is disposed on the second conductive semiconductor layer 126 that is not etched. The first electrode 130 is electrically connected to the first conductive semiconductor layer 122, and the second electrode 140 is electrically connected to the second conductive semiconductor layer 126.

  The first electrode 130 and the second electrode 140 are made of molybdenum (Mo), chromium (Cr), nickel (Ni), gold (Au), aluminum (Al), titanium (Ti), platinum (Pt), vanadium (V). , Tungsten (W), lead (Pd), copper (Cu), rhodium (Rh), or iridium (Ir), and may be formed in a single layer or a multilayer structure.

  A transparent electrode layer 142 may be disposed on the second conductive semiconductor layer 126 before the second electrode 140 is formed.

  According to the embodiment, a part of the transparent electrode layer 142 is opened so that the second conductive semiconductor layer 126 is exposed, and the second conductive semiconductor layer 126 and the second electrode 140 can be in contact with each other.

  Alternatively, as shown in FIG. 3, the second conductive semiconductor layer 126 and the second electrode 140 may be electrically connected with the transparent electrode layer 142 interposed therebetween.

  The transparent electrode layer 142 is for improving the electrical characteristics of the second conductive semiconductor layer 126 and improving the electrical contact with the second electrode 140, and can be formed in a layer or a plurality of patterns.

  A transparent conductive layer and a metal may be selectively used for the transparent electrode layer 142. For example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IAZO), indium zinc oxide (IGZO), IGZO (indium zinc oxide), IGZO (indium zinc indium oxide) aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, Ix, Rx / ITO, Ni / IrOx / Au, or Ni / I It may be formed to include at least one of Ox / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, Au, and Hf. However, it is not limited to these materials.

  A bridge electrode 150 is disposed between two adjacent light emitting cells 100. The bridge electrode 150 electrically connects two adjacent light emitting cells 100. As shown in FIGS. 1 to 3, the bridge electrode 150 continuously connects the first electrode 130 of one of the two adjacent light emitting cells 100 and the second electrode 140 of the other light emitting cell 100. By connecting in such a manner, a plurality of light emitting cells 100 can be connected in series. Alternatively, the bridge electrode 150 is not illustrated, but the electrodes (130 and 130; 140 and 140) of the same polarity are used in one of the adjacent two light emitting cells 100 and the other light emitting cell 100. A plurality of light emitting cells 100 may be connected in parallel by connection.

  As an example, referring to FIG. 3, the bridge electrode 150 connects two adjacent light emitting cells 100 in series. Specifically, the bridge electrode 150 includes the second light emission from the second electrode 140 of one of the two adjacent light emitting cells 100 along the side surface of the light emitting cell 100 and the side surface of the other light emitting cell 100. The two light emitting cells 100 adjacent to each other can be connected in series by extending to the first electrode 130 of the cell 100.

  The bridge electrode 150 may include the same material as the first electrode 130 or the second electrode 140, for example, molybdenum (Mo), chromium (Cr), nickel (Ni), gold (Au), aluminum (Al ), Titanium (Ti), platinum (Pt), vanadium (V), tungsten (W), lead (Pd), copper (Cu), rhodium (Rh) or iridium (Ir). It can be formed in a layer or multilayer structure.

  An insulating layer 160 is disposed on the side surface of the light emitting structure 120. The insulating layer 160 is disposed between the light emitting cell 100 and the bridge electrode 150 in a portion where the bridge electrode 150 exists.

  The insulating layer 160 serves to electrically isolate the adjacent light emitting cells 100 or between the bridge electrode 150 and the light emitting cells 100. The insulating layer 160 can prevent an electrical short circuit between the adjacent light emitting cells 100, and can prevent an electrical short circuit between the first conductive semiconductor layer 122 and the second conductive semiconductor layer 126 in one light emitting cell 100. Can do.

The insulating layer 160 can be made of a non-conductive oxide or nitride. For example, the insulating layer 160 can be made of a silicon oxide (SiO ₂ ) layer, an oxynitride layer, or an aluminum oxide layer, but is not limited thereto. .

  The bridge electrode 150 may not have a uniform thickness as a whole. The bridge electrode 150 may have a thicker portion than the first electrode 130 or the second electrode 140.

  The bridge electrode 150 includes a first portion 151 in contact with the first electrode 130 of one of the two adjacent light emitting cells 100, and a second portion 152 in contact with the second electrode 140 of the other light emitting cell 100. A third portion 153 between the first portion 151 and the second portion 152, and between the first portion 151 and the third portion 153 or between the second portion 152 and the third portion 153. And a fourth portion 154 located on the side surface of the light emitting cell 100.

  The first portion 151 is disposed on the first conductive semiconductor layer 122 while being in contact with the first electrode 130 of one of the two adjacent light emitting cells 100, and the second portion 152 The second conductive type semiconductor layer 126 may be disposed in contact with the second electrode 140 of the light emitting cell 100. The first portion 151 may be a portion disposed on the first conductive semiconductor layer 122 exposed by the etching region E of the light emitting structure 120.

  In addition, the first portion 151 may be positioned on the first electrode 130 of one of the two adjacent light emitting cells 100 and is simultaneously disposed on the first conductive semiconductor layer 122. . The second portion 152 may be located on the second electrode 140 of the other light emitting cell 100 and may be disposed on the second conductive semiconductor layer 126. The first portion 151 may be a portion disposed on the first conductive semiconductor layer 122 exposed by the etching region E of the light emitting structure 120.

  The third portion 153 is disposed between two adjacent light emitting cells 100 and is disposed on the substrate 110. That is, the third portion 153 may be disposed in a separation space between two adjacent light emitting cells 100 disposed on the substrate 110.

  A fourth portion 154 of the bridge electrode 150 may be disposed between the first portion 151 and the third portion 153 and between the second portion 152 and the third portion 153. The fourth portion 154 electrically connects the first portion 151 and the third portion 153, and the second portion and the third portion.

In the bridge electrode 150, the thickness T _B3 of the third portion 153 may be larger than the thickness T ₁ of the first electrode 130 or the thickness T ₂ of the second electrode 140. Bridge electrode 150, rather than the overall thickness is constant, it may be greater than the thickness of the third portion thickness T _B3 of 153 the first portion 151 or second portion 152. The bridge electrode 150, the thickness _{T B4} of the fourth portion 154, the same as the thickness of either of the first portion 151 or second portion 152, or the thickness of the first portion 151 or second portion 152 It may be smaller than this. Bridge electrode 150 has a thickness _{T B3} of the third portion 153 may be maximized.

  According to the embodiment, by forming at least a part of the bridge electrode 150 thicker than the first electrode 130 or the second electrode 140 and increasing the area of the bridge electrode 150, the area of the bridge electrode 150 is reduced during the operation of the light emitting device. It is possible to improve the problem of reliability reduction such as the current concentrated on the bridge electrode 150 and the bridge electrode 150 being burnt.

  Depending on the embodiment, the bridge electrode 150 may have the same thickness as the first electrode 130 or the second electrode 140 in the first portion 151 or the second portion 152.

  Alternatively, the bridge electrode 150 may have the same height as the first electrode 130 or the second electrode 140 in the first portion 151 or the second portion 152, respectively. That is, the bridge electrode 150 is in contact with the first electrode 130 without having a step with the first electrode 130 on the surface of the first portion 151, and has no step with the second electrode 140 on the surface of the second portion 152. It can be in contact with the second electrode 140.

Referring again to FIG. 1, the light emitting cells 100Z ₁ arranged at one end in the arrangement of the plurality of light emitting cells 100, by the second electrode 140 includes a second electrode pad 140P, the area for wire bonding Can be secured. Similarly, light emitting cells 100Z ₂ arranged at the other end in the arrangement of the plurality of light emitting cells 100, by the first electrode 130 includes a first electrode pad 130P, ensuring an area for wire bonding Can do.

  FIG. 4 is an enlarged plan view showing a part of the light emitting device according to the second embodiment. The content overlapping with the above-described embodiment will not be described again, and the following description will focus on the differences. 4 is the same as FIG. 3 as viewed from the front when cut in the AA direction. Therefore, FIG.

  Referring to FIG. 4, the light emitting device 200 </ b> B according to the second embodiment includes a plurality of light emitting cells 100 and a bridge electrode 150 that electrically connects two adjacent light emitting cells 100.

  The thickness of the bridge electrode 150 is not constant as a whole. The bridge electrode 150 has a thicker portion than the first electrode 130 or the second electrode 140.

  The bridge electrode 150 includes a first portion 151 in contact with the first electrode 130 of one of the two adjacent light emitting cells 100, and a second portion 152 in contact with the second electrode 140 of the other light emitting cell 100. A third portion 153 between the first portion 151 and the second portion 152, and between the first portion 151 and the third portion 153 or between the second portion 152 and the third portion 153. And a fourth portion 154 located on the side surface of the light emitting cell 100.

In the bridge electrode 150, the thickness T _B3 of the third portion 153 may be larger than the thickness T ₁ of the first electrode 130 or the thickness T ₂ of the second electrode 140. Bridge electrode 150, rather than the overall thickness is constant, it may be greater than the thickness of the third portion thickness T _B3 of 153 the first portion 151 or second portion 152. The bridge electrode 150, or the thickness _{T B4} of the fourth portion 154 is the same as the thickness of the first portion 151 or second portion 152, or than the thickness of the first portion 151 or second portion 152 May be small. Bridge electrode 150 has a thickness _{T B3} of the third portion 153 may be maximized.

The difference from the light emitting element 200A to the light emitting device 200B according to the second embodiment according to the first embodiment, the width _{W 2} of width _{W B} is the width _{W 1} or the second electrode 140 of the first electrode 130 of the bridge electrode 150 Is larger than

Width _{W B} of the bridge electrode 150 may be a 25Myuemu～35myuemu. For example, the width _{W B} of the bridge electrode 50 may be 30 [mu] m. The width _{W 2} of width _{W 1} or the second electrode 140 of the first electrode 130 may be a 5 m to 10 m. For example, the width W ₁ of the first electrode 130 or the width W ₂ of the second electrode 140 may be 7 μm, and the width W ₁ of the first electrode 130 is smaller than or equal to the second electrode width W _2. There may be.

According to the second embodiment, the width _{W B} of the bridge electrode 150 made wider than the width _{W 2} of width _{W 1} or the second electrode 140 of the first electrode 130, by widening the area of the bridge electrode 150, reliability Can be further improved, and problems such as poor disconnection of the bridge electrode 150 can be improved. Bridge electrode 150, since it is arranged on an edge portion of the light emitting cell 100, the light absorption due to the increase of the width W _B of the bridge electrode 150 can be minimized.

  FIG. 5 is an enlarged plan view showing a part of the light emitting device according to the third embodiment. The content overlapping with the above-described embodiment will not be described again, and the following description will focus on the differences. 5 is the same as FIG. 3 as viewed from the front when cut in the AA direction. Therefore, FIG.

  Referring to FIG. 5, the light emitting device 200 </ b> C according to the third embodiment includes a plurality of light emitting cells 100 and a bridge electrode 150 that electrically connects two adjacent light emitting cells 100.

  The light emitting element 200C according to the third embodiment is different from the light emitting element 200A according to the first embodiment in that a plurality of bridge electrodes 150 are disposed between two adjacent light emitting cells 100.

  For example, two bridge electrodes 150 that are spaced apart from each other can be disposed between two adjacent light emitting cells 100.

  The width of each of the two bridge electrodes 150 spaced apart from each other may be larger than the width of the first electrode 130 or the width of the second electrode 140.

  Each of the two bridge electrodes 150 spaced apart from each other may have a width of 15 μm to 25 μm. For example, the width of each of the two bridge electrodes 150 may be 20 μm. In addition, the width of the first electrode 130 or the width of the second electrode 140 can be the same as described in FIG.

  The thickness of the bridge electrode 150 is not constant as a whole. Each bridge electrode 150 has a thicker portion than the first electrode 130 or the second electrode 140.

  The bridge electrode 150 includes a first portion 151 in contact with the first electrode 130 of one of the two adjacent light emitting cells 100, and a second portion 152 in contact with the second electrode 140 of the other light emitting cell 100. A third portion 153 between the first portion 151 and the second portion 152, respectively, and between the first portion 151 and the third portion 153 or between the second portion 152 and the third portion 153. And a fourth portion 154 located on the side surface of the light emitting cell 100.

In the bridge electrode 150, the thickness T _B3 of the third portion 153 may be larger than the thickness T ₁ of the first electrode 130 or the thickness T ₂ of the second electrode 140. Bridge electrode 150, rather than the overall thickness is constant, it may be greater than the thickness of the third portion thickness T _B3 of 153 the first portion 151 or second portion 152. The bridge electrode 150, the thickness _{T B4} of the fourth portion 154, the same as the thickness of either of the first portion 151 or second portion 152, or the thickness of the first portion 151 or second portion 152 It may be smaller than this. Bridge electrode 150 has a thickness _{T B3} of the third portion 153 may be maximized.

  According to the third embodiment, by arranging a plurality of bridge electrodes 150 between two adjacent light emitting cells 100, the area of the bridge electrode 150 can be increased as a result. Even if it is disconnected, the disconnection failure can be solved by the other bridge electrode 150, so that the reliability can be improved. Since the bridge electrode 150 is disposed at the edge portion of the light emitting cell 100, light absorption due to an increase in the number of the bridge electrodes 150 can be minimized.

  FIG. 6 is an enlarged plan view showing a part of the light emitting device according to the fourth embodiment, and FIG. 7 is a cross-sectional view of FIG. The content overlapping with the above-described embodiment will not be described again, and the following description will focus on the differences.

  Referring to FIGS. 6 and 7, the light emitting device 200 </ b> D according to the fourth embodiment includes a plurality of light emitting cells 100 and a bridge electrode 150 that electrically connects two adjacent light emitting cells 100.

  The bridge electrode 150 may not have a uniform thickness as a whole. The bridge electrode 150 may have a thicker portion than the first electrode 130 or the second electrode 140.

  The bridge electrode 150 includes a first portion 151 in contact with the first electrode 130 of one of the two adjacent light emitting cells 100, and a second portion 152 in contact with the second electrode 140 of the other light emitting cell 100. A third portion 153 between the first portion 151 and the second portion 152, and between the first portion 151 and the third portion 153 or between the second portion 152 and the third portion 153. And a fourth portion 154 located on the side surface of the light emitting cell 100.

  The first portion 151 is in contact with the upper surface of the first electrode 130 of one of the two adjacent light emitting cells 100. That is, a part of the first portion 151 is disposed on the first conductive semiconductor layer 122 of one of the two adjacent light emitting cells 100, and the other part is The light emitting cell 100 is disposed on the first electrode 130 of one of the light emitting cells 100. The second portion 152 is in contact with the upper surface of the second electrode 140 of the other light emitting cell 100. That is, a part of the second portion 152 is disposed on the second conductive semiconductor layer 126 of the other light emitting cell 100 and the other part is a second electrode of the other light emitting cell 100. 140 is disposed at the top.

In the bridge electrode 150, the thickness T _B3 of the third portion 153 may be larger than the thickness T ₁ of the first electrode 130 or the thickness T ₂ of the second electrode 140. Bridge electrode 150, rather than the overall thickness is constant, it may be greater than the thickness of the third portion thickness T _B3 of 153 the first portion 151 or second portion 152. The bridge electrode 150, the thickness _{T B4} of the fourth portion 154, the same as the thickness of either of the first portion 151 or second portion 152, or the thickness of the first portion 151 or second portion 152 It may be smaller than this. Bridge electrode 150 has a thickness _{T B3} of the third portion 153 may be maximized. According to the embodiment, the area of the bridge electrode 150 is increased in a portion where the resistance is high, such as a connection portion between the electrodes 130 and 140 of the light emitting cell 100 and the bridge electrode 150, so that the bridge having a small area is operated during the operation of the light emitting device. It is possible to improve the problem of lowering reliability such that the current concentrates on the electrode 150 and the bridge electrode 150 is burnt.

  FIG. 8 is a side sectional view of a part of the light emitting device according to the fifth embodiment. The content overlapping with the above-described embodiment will not be described again, and the following description will focus on the differences. The plan view of FIG. 8 is the same as that of FIG.

  Referring to FIG. 8, a light emitting device 200E according to the fifth embodiment includes a plurality of light emitting cells 100 and a bridge electrode 150 that electrically connects two adjacent light emitting cells 100.

  The bridge electrode 150 includes a first portion 151 in contact with the first electrode 130 of one of the two adjacent light emitting cells 100, and a second portion 152 in contact with the second electrode 140 of the other light emitting cell 100. A third portion 153 between the first portion 151 and the second portion 152, and between the first portion 151 and the third portion 153 or between the second portion 152 and the third portion 153. And a fourth portion 154 located on the side surface of the light emitting cell 100. The first portion 151 may be in contact with the upper surface and at least one side surface of the first electrode 130. The first portion 151 may be disposed so as to surround the first electrode 130. In addition, the second portion 152 may be in contact with the upper surface and at least one side surface of the second electrode 140. The second portion 152 may be disposed so as to surround the second electrode 140.

The first portion 151, the thickness T _B11 of the portion located on the first conductive type semiconductor layer 122, the thickness T _B12 of the portion located on the first electrode 130 be substantially the same Good. In the second portion 152, the thickness _{TB21 of the} portion located on the second conductive type semiconductor layer 126 and the thickness _{TB22 of the} portion located on the second electrode 140 are substantially the same. May be.

  FIG. 9 is a side sectional view of a part of the light emitting device according to the sixth embodiment. The content overlapping with the above-described embodiment will not be described again, and the following description will focus on the differences.

  Referring to FIG. 9, the light emitting device 200 </ b> F according to the sixth embodiment includes a plurality of light emitting cells 100 and a bridge electrode 150 that electrically connects two adjacent light emitting cells 100.

  The light emitting element 200F is passivated on the surface of the light emitting element 200F except for a portion where the bridge electrode 151 and the first electrode 130 are electrically connected and a portion where the bridge electrode 152 and the second electrode 140 are electrically connected. Layer 160 can be disposed.

  10 is a plan view of the light emitting device according to the seventh embodiment, FIG. 11 is a plan view showing a part of FIG. 9 in an enlarged manner, and FIG. 12 is a front view of FIG. 11 cut in the BB direction. It is sectional drawing seen from. The content overlapping with the above-described embodiment will not be described again, and the following description will focus on the differences.

  Referring to FIGS. 10 to 12, a light emitting device 300 </ b> A according to the seventh embodiment includes a plurality of light emitting cells 100 and a bridge electrode 150 that electrically connects two adjacent light emitting cells 100.

  A substrate 110 is disposed below the plurality of light emitting cells 100. The plurality of light emitting cells 100 are supported by the substrate 110 and are spaced apart from each other on the substrate 110.

  A plurality of bridge electrodes 150 are disposed between two adjacent light emitting cells 100. The bridge electrode 150 electrically connects two adjacent light emitting cells 100.

  The bridge electrode 150 electrically connects the first conductive semiconductor layer 122 of one of the two adjacent light emitting cells 100 and the second conductive semiconductor layer 126 of the other light emitting cell 100. be able to.

  According to the fourth embodiment, by arranging a plurality of bridge electrodes 150 between two adjacent light emitting cells 100, the area of the bridge electrode 150 can be increased as a result. Even if it is disconnected, the disconnection failure can be solved by the other bridge electrode 150, so that the reliability can be improved.

  The plurality of bridge electrodes 150 include a first portion 151 on the first conductive type semiconductor layer 122 of one of the two adjacent light emitting cells 100 and a second conductive type semiconductor of the other light emitting cell 100. A second portion 152 on the layer 126 and a third portion 153 between the first portion 151 and the second portion 152 may be included. The first portion 151 may be a portion disposed on the first conductive semiconductor layer 122 exposed by the etching region E of the light emitting structure 120.

  The third portion 153 is disposed between two adjacent light emitting cells 100 and is disposed on the substrate 110. That is, the third portion 153 may be disposed in a separation space between two adjacent light emitting cells 100 disposed on the substrate 110.

  The bridge electrode 150 between the first portion 151 and the third portion 153 and the bridge electrode 150 between the second portion 152 and the third portion 153 are portions disposed on the side surface of the light emitting structure 120. obtain.

  In the seventh embodiment, the bridge electrode 150 is directly electrically connected to the first conductive semiconductor layer 122 and the second conductive semiconductor layer 126 of the light emitting cell 100 without a separate first electrode or second electrode. Also good. That is, the bridge electrode 150 is in contact with the first conductive type semiconductor layer 122 of one of the two adjacent light emitting cells 100 and the first portion 151, and the second conductive type semiconductor layer of the other light emitting cell 100. 126 and the second portion 152 may contact each other.

Referring to FIG. 10, the light emitting cell 100 </ b> Z <b> ₁ disposed at one end in the array of the plurality of light emitting cells 100 has the second electrode pad 140 </ b> P disposed on the second conductive semiconductor layer 126, thereby performing wire bonding. The area for can be secured. Similarly, light emitting cells 100Z ₂ arranged at the other end in the arrangement of the plurality of light emitting cells 100, since the first electrode pad 130P is disposed on the first conductive type semiconductor layer 122, for wire bonding Can be ensured.

  FIG. 13 is a side sectional view of a part of the light emitting device according to the eighth embodiment. The content overlapping with the above-described embodiment will not be described again, and the following description will focus on the differences. Since the plan view of FIG. 13 is the same as FIG. 11, reference is made to FIG.

  Referring to FIG. 13, the light emitting device 300 </ b> B according to the eighth embodiment includes a plurality of light emitting cells 100 and a bridge electrode 150 that electrically connects two adjacent light emitting cells 100.

  The light emitting element 300B according to the eighth embodiment is different from the light emitting element 300A according to the seventh embodiment in that the thickness of the bridge electrode 150 is not constant as a whole.

  The bridge electrode 150 includes a first portion 151 on the first conductive type semiconductor layer 122 of one of the two adjacent light emitting cells 100 and a second conductive type semiconductor layer 126 of the other light emitting cell 100. A second portion 152 and a third portion 153 between the first portion 151 and the second portion 152, and between the first portion 151 and the third portion 153 or the second portion 152. A fourth portion 154 may be included that is electrically connected between the first portion 153 and the third portion 153 and located on the side surface of the light emitting cell 100. The first portion 151 may be a portion disposed on the first conductive semiconductor layer 122 exposed by the etching region E of the light emitting structure 120.

  The third portion 153 is disposed between two adjacent light emitting cells 100 and is disposed on the substrate 110. That is, the third portion 153 may be disposed in a separation space between two adjacent light emitting cells 100 disposed on the substrate 110.

  A fourth portion 154 of the bridge electrode 150 may be disposed on the side surface between the first portion 151 and the third portion 153 and between the second portion 152 and the third portion 153. The fourth portion 154 electrically connects the first portion 151 and the third portion 153, and the second portion and the third portion.

The bridge electrode 150 may have a thickness T _B3 of the third portion 153 greater than a thickness T _B1 of the first portion 151 or a thickness T _B2 of the second portion 152. The bridge electrode 150, the thickness _{T B4} of the fourth portion 154, the same as the thickness of either of the first portion 151 or second portion 152, or the thickness of the first portion 151 or second portion 152 It may be smaller than this. Bridge electrode 150 has a thickness _{T B3} of the third portion 153 may be maximized.

  According to the eighth embodiment, by forming at least a part of the bridge electrode 150 thick and widening the area of the bridge electrode 150, current is concentrated on the bridge electrode 150 having a small area during the operation of the light emitting device. It is possible to improve the problem of reliability deterioration such as the bridge electrode 150 being burnt.

  FIG. 14 is a side sectional view of a part of the light emitting device according to the ninth embodiment. The content overlapping with the above-described embodiment will not be described again, and the following description will focus on the differences. The plan view of FIG. 14 is the same as FIG.

  Referring to FIG. 14, a light emitting device 300 </ b> C according to the ninth embodiment includes a plurality of light emitting cells 100 and a bridge electrode 150 that electrically connects two adjacent light emitting cells 100.

  The bridge electrode 150 includes a first portion 151 on the first conductive type semiconductor layer 122 of one of the two adjacent light emitting cells 100 and a second conductive type semiconductor layer 126 of the other light emitting cell 100. A second portion 152 and a third portion 153 between the first portion 151 and the second portion 152, and between the first portion 151 and the third portion 153 or the second portion 152. A fourth portion 154 may be included that is electrically connected between the first portion 153 and the third portion 153 and located on the side surface of the light emitting cell 100. The first portion 151 may be a portion disposed on the first conductive semiconductor layer 122 exposed by the etching region E of the light emitting structure 120.

The light emitting device 300C according to the ninth embodiment is different from the light emitting device 300B according to the eighth embodiment in that the thickness T _B1 of the first portion 151 or the thickness T _B2 of the second portion 152 is the fourth portion 154. _Is greater than the thickness _TB4 . The thickness T _B1 of the first portion 151 or the thickness T _B2 of the second portion 152 is smaller than the thickness T _{B3 of} the third portion 153 or the same as the thickness T _B3 of the third portion 153. Or it may be substantially the same.

  According to the embodiment, by increasing the area of the bridge electrode 150 in a portion where the resistance is high, such as a connection portion between the first and second conductive semiconductor layers 122 and 126 of the light emitting cell 100 and the bridge electrode 150, In addition, it is possible to improve the problem of lowering reliability such that the current is concentrated on the bridge electrode 150 having a small area and the bridge electrode 150 is burnt.

  15 is a plan view of the light emitting device according to the tenth embodiment, FIG. 16 is a plan view showing a part of FIG. 15 in an enlarged manner, and FIG. 17 is a sectional view of FIG. 16 cut in the BB direction. It is. The content overlapping with the above-described embodiment will not be described again, and the following description will focus on the differences.

  Referring to FIGS. 15 to 17, the light emitting device 300 </ b> D according to the tenth embodiment includes a plurality of light emitting cells 100 and a bridge electrode 150 that electrically connects two adjacent light emitting cells 100.

  A substrate 110 is disposed below the plurality of light emitting cells 100. The plurality of light emitting cells 100 are supported by the substrate 110 and are spaced apart from each other on the substrate 110.

  A plurality of bridge electrodes 150 are disposed between two adjacent light emitting cells 100. The bridge electrode 150 electrically connects two adjacent light emitting cells 100.

  A plurality of bridge electrodes 150 are disposed between the first electrode 130 of one of the two adjacent light emitting cells 100 and the second electrode 140 of the other light emitting cell 100. .

  The bridge electrode 150 includes a first portion 151 in contact with the first electrode 130 of one of the two adjacent light emitting cells 100, and a second portion 152 in contact with the second electrode 140 of the other light emitting cell 100. , And a third portion 153 between the first portion 151 and the second portion 152.

  The first portion 151 is disposed on the first conductive semiconductor layer 122 while being in contact with the first electrode 130 of one of the two adjacent light emitting cells 100, and the second portion 152 The second conductive type semiconductor layer 126 may be disposed in contact with the second electrode 140 of the light emitting cell 100. The first portion 151 may be a portion disposed on the first conductive semiconductor layer 122 exposed by the etching region E of the light emitting structure 120.

  The third portion 153 is disposed between two adjacent light emitting cells 100 and is disposed on the substrate 110. That is, the third portion 153 may be disposed in a separation space between two adjacent light emitting cells 100 disposed on the substrate 110.

  The bridge electrode 150 between the first portion 151 and the third portion 153 and the bridge electrode 150 between the second portion 152 and the third portion 153 are portions disposed on the side surface of the light emitting structure 120. obtain.

  Referring to FIG. 16, the first electrode 130 and the second electrode 140 may be arranged to have a longitudinal direction of the first direction. The plurality of bridge electrodes 150 may have a longitudinal direction in a second direction different from the first direction. As an example, the first direction and the second direction may be orthogonal.

  According to the embodiment, the bridge electrode 150 is between the first electrode 130 arranged to have the longitudinal direction of the first direction and the second electrode 140 arranged to have the longitudinal direction of the first direction, A plurality may be spaced apart so as to have the longitudinal direction of the second direction. At this time, in each of the plurality of bridge electrodes 150, the first portion 151 is in contact with the first electrode 130, and the second portion 152 is in contact with the second electrode 140.

  The bridge electrode 150 may have the same thickness as the first electrode 130 or the second electrode 140 in the first part 151 or the second part 152, respectively.

  Alternatively, the bridge electrode 150 may have the same height as the first electrode 130 or the second electrode 140 in the first portion 151 or the second portion 152, respectively. That is, the bridge electrode 150 is in contact with the first electrode 130 without having a step with the first electrode 130 on the surface of the first portion 151, and has no step with the second electrode 140 on the surface of the second portion 152. It can be in contact with the second electrode 140.

Referring again to Figure 15, the light emitting cells 100Z ₁ arranged at one end in the arrangement of the plurality of light emitting cells 100, by the second electrode 140 includes a second electrode pad 140P, the area for wire bonding Can be secured. Similarly, light emitting cells 100Z ₂ arranged at the other end in the arrangement of the plurality of light emitting cells 100, by the first electrode 130 includes a first electrode pad 130P, ensuring an area for wire bonding Can do.

  FIG. 18 is a side sectional view of a part of the light emitting device according to the eleventh embodiment. The content overlapping with the above-described embodiment will not be described again, and the following description will focus on the differences. Since the plan view of FIG. 18 is the same as FIG. 16, reference is made to FIG.

  Referring to FIG. 18, a light emitting device 300E according to the eleventh embodiment includes a plurality of light emitting cells 100 and a bridge electrode 150 that electrically connects two adjacent light emitting cells 100.

  The light emitting element 300E according to the eleventh embodiment is different from the light emitting element 300D according to the tenth embodiment in that the thickness of the bridge electrode 150 is not constant as a whole.

  The bridge electrode 150 includes a first portion 151 on the first conductive type semiconductor layer 122 of one of the two adjacent light emitting cells 100 and a second conductive type semiconductor layer 126 of the other light emitting cell 100. A second portion 152 and a third portion 153 between the first portion 151 and the second portion 152, and between the first portion 151 and the third portion 153 or the second portion 152. A fourth portion 154 may be included that is electrically connected between the first portion 153 and the third portion 153 and located on the side surface of the light emitting cell 100. The first portion 151 may be a portion disposed on the first conductive semiconductor layer 122 exposed by the etching region E of the light emitting structure 120.

  The third portion 153 is disposed between two adjacent light emitting cells 100 and is disposed on the substrate 110. That is, the third portion 153 may be disposed in a separation space between two adjacent light emitting cells 100 disposed on the substrate 110.

  A fourth portion 154 of the bridge electrode 150 may be disposed on the side surface between the first portion 151 and the third portion 153 and between the second portion 152 and the third portion 153. The fourth portion 154 electrically connects the first portion 151 and the third portion 153, and the second portion and the third portion.

In the bridge electrode 150, the thickness T _B3 of the third portion 153 may be larger than the thickness T ₁ of the first electrode 130 or the thickness T ₂ of the second electrode 140. Bridge electrode 150, rather than the overall thickness is constant, the thickness T _B3 of the third portion 153 may be greater than the thickness of the first portion 151 or second portion 152. The bridge electrode 150, the thickness _{T B4} of the fourth portion 154, the same as the thickness of either of the first portion 151 or second portion 152, or the thickness of the first portion 151 or second portion 152 It may be smaller than this. Bridge electrode 150 has a thickness _{T B3} of the third portion 153 may be maximized.

  According to the eleventh embodiment, at least a part of the bridge electrode 150 is formed thick and the area of the bridge electrode 150 is widened, so that current concentrates on the bridge electrode 150 having a small area during the operation of the light emitting element. It is possible to improve the problem of reliability deterioration such as the bridge electrode 150 being burnt.

  The bridge electrode 150 may have the same thickness as the first electrode 130 or the second electrode 140 in the first part 151 or the second part 152, respectively.

  Alternatively, the bridge electrode 150 may have the same height as the first electrode 130 or the second electrode 140 in the first portion 151 or the second portion 152, respectively. That is, the bridge electrode 150 is in contact with the first electrode 130 without having a step with the first electrode 130 on the surface of the first portion 151, and has no step with the second electrode 140 on the surface of the second portion 152. It can be in contact with the second electrode 140.

  FIG. 19 is a cross-sectional view of a light emitting device 400A according to the twelfth embodiment. The same reference numerals as those in FIG. 3 denote the same components, and the description of the same components is omitted.

  Referring to FIG. 19, unevenness 110 a that improves light extraction by scattering light emitted from the light emitting structure 120 may be formed on the upper surface of the substrate 110. For example, the substrate 110 may be PSS (Patterned Sapphire Substrate).

The unevenness 110a can also be formed in a region of the upper surface of the substrate 110 located between adjacent light emitting cells (hereinafter referred to as “first region S ₁ of the substrate 110”).

A portion of the first region _S insulating layer 160 disposed on the uneven 110a formed on the _first substrate 110 may have a curved surface corresponding to the uneven 110a, the shape of the curved surface of the insulating layer 160, irregularity 110a The shape of the outer peripheral surface may be the same.

In addition, an unevenness 153 a corresponding to the unevenness 110 a of the substrate 110 may be formed on the upper surface of the third portion 153 of the bridge electrode 150 disposed on the insulating layer 160 located in the first region S ₁ of the substrate 110. it can. The unevenness 153 a of the third portion 153 of the bridge electrode 150 may include a plurality of protrusions protruding from the upper surface of the third portion 153 of the bridge electrode 150.

The thickness _{T B3} of the third portion 153 of the bridge electrode 150 may be greater than the thickness of the first portion 151 or second portion 152 of the bridge electrode 150.

The thickness _{T B3} of the third portion 153 of the bridge electrode 150 may be less than or equal to the sum of the thickness and the first thickness _{T 5} of the first portion 151 of the bridge electrode 150. The first thickness T ₅ may be the sum of the thicknesses of the buffer layer 112, the undoped semiconductor layer 114, and the etching region E of the light emitting structure 120.

  That is, the height of the upper surface of the third portion 153 of the bridge electrode 150 with respect to the upper surface of the substrate 110 may be smaller than or the same as the height of the upper surface of the first portion 151 of the bridge electrode 150. .

  FIG. 20 is a cross-sectional view of a light emitting device 400B according to the thirteenth embodiment. The same reference numerals as those in FIG. 12 indicate the same configuration, and the description of the same configuration is omitted.

Referring to FIG. 20, the third portion 153 of the bridge electrode 150 disposed on the insulating layer 160 located in the first region S ₁ of the substrate 110 may include unevenness 153 a corresponding to the unevenness 110 a of the substrate 110. . The unevenness 153 a of the third portion 153 of the bridge electrode 150 may include a plurality of protrusions protruding from the upper surface of the third portion 153 of the bridge electrode 150.

  When compared with the twelfth embodiment, the third embodiment is different in that the thicknesses of the first to third portions 151, 152, 153 of the bridge electrode 150 are all the same.

  FIG. 21 is a view showing an embodiment of a light emitting device package including the light emitting device according to the embodiment.

  The light emitting device package 400 according to an embodiment includes a body 310, a first lead frame 421 and a second lead frame 422 disposed on the body 310, and the first lead frame 421 disposed on the body 310. The light emitting device (200; 300) according to each of the above-described embodiments, which is electrically connected to the second lead frame 422, and a molding part 440 formed in the cavity are included. A cavity can be formed in the body 310. As described above, the light emitting element (200; 300) is formed by forming a plurality of light emitting cells connected in series or in parallel as one chip.

  The body 310 may include a silicon material, a synthetic resin material, or a metal material. When the body 310 is made of a conductive material such as a metal material, an insulating layer is coated on the surface of the body 310 to prevent an electrical short circuit between the first and second lead frames 421 and 422. can do.

  The first lead frame 421 and the second lead frame 422 are electrically separated from each other, and supply current to the light emitting device 200; 300. In addition, the first lead frame 421 and the second lead frame 422 may reflect light generated from the light emitting device (200; 300) to increase light efficiency. The generated heat can be discharged to the outside.

  The light emitting device (200; 300) may be disposed on the body 310, or may be disposed on the first lead frame 421 or the second lead frame 422. In the present embodiment, the first lead frame 421 and the light emitting element (200; 300) are directly energized, and the second lead frame 422 and the light emitting element (200; 300) are connected via a wire 430. The light emitting elements (200; 300) may be connected to the lead frames 421 and 422 by a flip chip method or a die bonding method in addition to the wire bonding method.

  The molding part 440 may surround and protect the light emitting device (200; 300). In addition, a phosphor 450 is included on the molding part 440, and the wavelength of light emitted from the light emitting device (200; 300) can be changed.

  The phosphor 450 may include a garnet-based phosphor, a silicate-based phosphor, a nitride-based phosphor, or an oxynitride-based phosphor.

For example, the garnet phosphor may be YAG (Y ₃ Al ₅ O ₁₂ : Ce ³⁺ ) or TAG (Tb ₃ Al ₅ O ₁₂ : Ce ³⁺ ), and the silicate phosphor may be (Sr, Ba, Mg, Ca) ₂ SiO ₄ : Eu ²⁺ may be used, and the nitride phosphor may be CaAlSiN ₃ : Eu ²⁺ containing SiN, and the oxynitride phosphor may be SiON. _{Si 6-x} containing ^{_{Al x O x N 8-x}} : may be Eu 2+ (0 <x <6 ).

  The light in the first wavelength region emitted from the light emitting device (200; 300) is excited by the phosphor 450 and converted into light in the second wavelength region, and the light in the second wavelength region is converted into a lens (FIG. The light path can be changed while passing through (not shown).

  A plurality of light emitting device packages according to the embodiment may be arrayed on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, may be disposed on the light path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member can function as a light unit. Still other embodiments may be implemented with a display device, a pointing device, and a lighting system including the semiconductor light emitting device or the light emitting device package described in the above embodiments. For example, the lighting system includes a lamp and a streetlight. Can do.

  Hereinafter, a headlamp and a backlight unit will be described as an embodiment of an illumination system in which the above-described light emitting element or light emitting element package is arranged.

  FIG. 22 is a diagram illustrating an embodiment of a headlamp in which the light emitting device or the light emitting device package according to the embodiment is arranged.

  Referring to FIG. 22, the light emitted from the light emitting module 710 in which the light emitting device or the light emitting device package according to the embodiment is disposed is reflected by the reflector 720 and the shade 730, and then passes through the lens 740 and forwards the vehicle body. Can head to.

  The light emitting module 710 may have a plurality of light emitting elements mounted on a circuit board, but is not limited thereto.

  FIG. 23 is a diagram illustrating an embodiment of a display device in which the light emitting device package according to the embodiment is arranged.

  Referring to FIG. 23, the display device 800 according to the embodiment includes light emitting modules 830 and 835, a reflector 820 on a bottom cover 810, and light emitted from the light emitting module disposed in front of the reflector 820. A light guide plate 840 that guides the front of the display device, a first prism sheet 850 and a second prism sheet 860 disposed in front of the light guide plate 840, and a panel 870 disposed in front of the second prism sheet 860. And a color filter 880 disposed in front of the panel 870.

  The light emitting module includes the above-described light emitting device package 835 on the circuit board 830. Here, a PCB or the like can be used as the circuit board 830, and the light emitting element package 835 may be any one of the embodiments.

  The bottom cover 810 can house components in the display device 800. The reflection plate 820 may be provided as a separate component as shown in the figure, or may be provided in a form in which the rear surface of the light guide plate 840 or the front surface of the bottom cover 810 is coated with a highly reflective material. is there.

  Here, the reflecting plate 820 can be made of a material that has a high reflectance and can be used in an ultra-thin shape, and can use polyethylene terephthalate (PET).

  The light guide plate 840 scatters light emitted from the light emitting device package module so that the light is uniformly distributed over the entire area of the screen of the liquid crystal display device. Accordingly, the light guide plate 840 is made of a material having a good refractive index and transmittance, and can be formed of polymethyl methacrylate (PMMA), polycarbonate (PolyCarbonate; PC), polyethylene (PolyEthylene; PE), or the like. In addition, an air guide method in which the light guide plate is omitted and light is transmitted in the space on the reflection sheet 820 is also possible.

  The first prism sheet 850 is formed of a transparent and elastic polymer material on one surface of a support film, and the polymer has a prism layer in which a plurality of three-dimensional structures are repeatedly formed. Can do. Here, as shown in the figure, the plurality of patterns may be provided with peaks and valleys repeatedly in a stripe shape.

  The crest and trough directions on one surface of the support film in the second prism sheet 860 may be perpendicular to the crest and trough directions on the one surface of the support film in the first prism sheet 850. This is because the light transmitted from the light emitting module and the reflection sheet is uniformly dispersed in all directions of the panel 870.

  In the present embodiment, the first prism sheet 850 and the second prism sheet 860 constitute an optical sheet, but the optical sheet may be composed of other combinations, for example, a microlens array, and a diffusion sheet and a microlens. A combination with an array or a combination of one prism sheet and a microlens array may be used.

  Although the liquid crystal display panel (Liquid crystal display) may be arranged as the panel 870, other types of display devices that require a light source may be provided in addition to the liquid crystal display panel.

  In the panel 870, a liquid crystal is positioned between the glass bodies, and a polarizing plate is placed on both glass bodies in order to use light polarization. Here, the liquid crystal has an intermediate characteristic between a liquid and a solid, and the liquid crystal, which is an organic molecule having fluidity like a liquid, has a state regularly arranged like a crystal, An image is displayed using the property that the molecular arrangement is changed by an external electric field.

  A liquid crystal display panel used for a display device is an active matrix system, and a transistor is used as a switch for adjusting a voltage supplied to each pixel.

  A color filter 880 is provided in front of the panel 870, and light projected from the panel 870 can express an image by transmitting only red, green, and blue light for each pixel. .

  The features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like exemplified in each embodiment can be implemented by combining or modifying other embodiments by those having ordinary knowledge in the field to which the present invention belongs. Therefore, contents relating to such combinations and modifications should be construed as being included in the scope of the present invention.

100 light emitting cell 110 substrate 120 light emitting structure 122 first conductive semiconductor layer 124 active layer 126 second conductive semiconductor layer 130 first electrode 140 second electrode 150 bridge electrode 151 first portion 152 second portion 153 third portion 160 Insulating layer 200A to 200C, 300A to 300D Light emitting element 310 Package body 421, 422 First and second lead frames 430 Wire 440 Molding part 450 Phosphor 710 Light emitting module 720 Reflector 730 Shade 800 Display device 810 Bottom cover 820 Reflector 840 Light guide plate 850 First prism sheet 860 Second prism sheet 870 Panel 880 Color filter

Claims (10)

A substrate,
A plurality of light emitting cells disposed on the substrate;
A bridge electrode that electrically connects two adjacent light emitting cells;
An insulating layer disposed between the light emitting cell and the bridge electrode;
The plurality of light emitting cells includes a first conductive semiconductor layer, a second conductive semiconductor layer, a light emitting structure including an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer; A first electrode on the first conductivity type semiconductor layer and a second electrode on the second conductivity type semiconductor layer,
The bridge electrode is
A first portion disposed on an upper surface of the first conductive type semiconductor layer and in contact with a first electrode of one of the two adjacent light emitting cells;
A second portion disposed on the upper surface of the second conductive semiconductor layer and in contact with the other second electrode of the two adjacent light emitting cells;
A third portion disposed between the first portion and the second portion;
A fourth portion disposed between the first portion and the third portion and between the second portion and the third portion ;
The thickness of the third part is greater than the thickness of the first part, the thickness of the second part, and the thickness of the fourth part,
The thickness of the third portion of the bridge electrode is greater than the thickness of the first electrode and the thickness of the second electrode,
The substrate includes a first uneven that will be formed in the first region of the upper surface of the substrate located between the two adjacent light emitting cells,
The third portion of the bridge electrode is disposed on the first region of the substrate ;
The bridge electrode includes a second unevenness formed on an upper surface of the third portion of the bridge electrode. The shorter one of the horizontal length and the vertical length of the bridge electrode is the shorter of the horizontal length and the vertical length of the first electrode or the second electrode . The light emitting device according to claim 1, wherein the light emitting device is longer than the length .   The light emitting structure includes an etching region that is partially etched to expose the first conductive semiconductor layer, and the first electrode is disposed on the exposed first conductive semiconductor layer. The light emitting device according to claim 1. A portion of the insulating layer disposed on the first region has a curved surface,
Wherein the shape of the curved surface, the first an uneven same shape of light-emitting element according to any one of claims 1 to 3. 5. The light emitting device according to claim 1, wherein the third portion of the bridge electrode includes a plurality of protrusions protruding from an upper surface of the third portion.   The light emitting device according to claim 1, wherein the third portion is disposed between two adjacent light emitting cells.   The light emitting device according to any one of claims 1 to 6, wherein the bridge electrode has the same height as the first electrode or the second electrode in the first portion or the second portion, respectively.   The light emitting device according to claim 1, wherein a plurality of the bridge electrodes are present between two adjacent light emitting cells. 2. The light emitting device according to claim 1, wherein a part of the first part is disposed on the first electrode and a part of the second part is disposed on the second electrode. Before Symbol thickness of the fourth part, the smaller than the first portion or each of the thickness of the second part partial light-emitting element according to any one of claims 1 to 9.

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