KR100966372B1 - Monolithic light emitting diode array and method of manufacturing the same - Google Patents

Abstract

The light emitting diode array includes a substrate having an electrically insulating property, and a plurality of LED cells spaced from each other by at least one side inclined by an isolation region exposing the substrate on the substrate, wherein the LED cells are sequentially disposed on the substrate. And a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer formed thereon; and a first connection formed on the inclined side surface of the first conductive semiconductor layer of the LED cell and extending to the isolation region. A transparent electrode layer formed on the metal electrode layer having an extension part and a second connection extension part formed on the second conductive semiconductor layer of the LED cell and extending to the isolation region according to an inclined side of the LED cell; An insulating layer formed on the surface of the LED cell such that the active layer of the LED cell and the first conductive semiconductor layer are electrically insulated from each other, wherein the first and second connection extensions are at least different from each other. It is characterized in that it is connected to the first or second connection extension corresponding to the LED cell.

Light Emitting Diodes, Arrays, Monolithic, Alternating Voltage

Description

MONOLITHIC LIGHT EMITTING DIODE ARRAY AND METHOD OF MANUFACTURING THE SAME

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a monolithic light emitting diode array, and more particularly, to a monolithic light emitting diode array having a wiring structure suitable for various connection types such as series or parallel of light emitting diodes and a method of manufacturing the same.

Since semiconductor light emitting diodes have an advantageous advantage as a light source in terms of output, efficiency and reliability, they have recently been actively researched and developed as high power and high efficiency light sources that can replace backlights of lighting devices or display devices.

In general, light emitting diodes are driven at low direct current. Thus, driving a light emitting diode at a regular voltage (AC 220V) requires an additional circuit (eg, an AC / DC converter) that supplies a low DC output voltage.

However, the introduction of such additional circuits not only complicates the configuration of the LED module, but can also reduce its efficiency and reliability. In addition, the complex structure may cause errors in the individual LED mounting and assembly process, in which case the LED device can be destroyed by a high reverse bias voltage.

In order to solve this problem, an LED array having a wiring connection capable of driving an AC voltage has been proposed. However, since an additional wiring connection process is introduced after the electrode forming process for each LED cell, the process becomes very complicated. In terms of luminous efficiency, since many wirings are formed on the surface of the LED cell, there is a problem that the light extraction efficiency is lowered. In addition, there is a problem that the wiring between the LED cells is difficult to deposit so that a short circuit does not occur due to the stepped structure of the LED cells.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems of the prior art, and an object thereof is to provide a light emitting diode array having a wiring structure which can be provided through a simpler process and has excellent stability and reliability.

Another object of the present invention is to provide a method of manufacturing a light emitting diode array which can simplify the process and improve the stability and reliability of the wiring structure.

In order to achieve the above technical problem, an aspect of the present invention,

A plurality of LED cells spaced apart from each other by at least one side surface and spaced apart from each other by a substrate having an electrically insulating property, and a separation region where the substrate is exposed on the substrate, wherein the LED cells are each sequentially formed on the substrate. And a semiconductor layer, an active layer, and a second conductive semiconductor layer, and a metal electrode layer formed on the inclined side surface of the first conductive semiconductor layer of the LED cell and having a first connection extension extending to the isolation region. And a transparent electrode layer formed on the second conductive semiconductor layer of the LED cell, the second electrode extending part extending to the isolation region according to the inclined side of the LED cell, and the transparent electrode layer and the active layer of the LED cell. And an insulating layer formed on the surface of the LED cell such that the first conductive semiconductor layer is electrically insulated from each other, wherein the first and second connection extensions are formed of at least one first or second The light emitting diode array is connected to the second connection extension.

A first connection extension of at least one LED cell of the plurality of LED cells may be connected to a second connection extension of another LED cell such that different polarities are connected to implement a series connection structure between at least some LED cells.

A first connection extension of at least one LED cell of the plurality of LED cells may be connected to a first connection extension of another LED cell such that the same polarity is connected to implement a parallel connection structure between at least some other LED cells. In addition, a first connection extension of at least one LED cell of the plurality of LED cells may be connected to a first connection extension of another LED cell.

Preferably, the plurality of LED cells are disposed adjacent to each other LED cells to be directly connected by the first and second connection extension, the opposite surface may be formed in the inclined side.

It is preferable that the inclined side surfaces of the plurality of LED cells are inclined at an angle of 30 to 60 degrees.

In order to sufficiently secure the connection area of the first conductive semiconductor layer for the metal electrode layer, the first conductive semiconductor layer of the plurality of LED cells may be exposed by etching the second conductive semiconductor layer and a part of the active layer. It may have a top surface area. The metal electrode layer may be formed up to an upper surface region of the first conductive semiconductor layer.

Preferably, the first and second connection extensions may be connected to be driven by AC voltages of the plurality of LED cells.

According to another aspect of the present invention, there is provided a light emitting stack including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer sequentially grown on an electrically insulating substrate, and the substrate is exposed and separated. Selectively etching the light emitting stack to form a plurality of LED cells at least one side inclined from one another by a region, and the separation region on at least one side of the first conductive semiconductor layer of the LED cell Forming a metal electrode layer having a first connection extension extending to and forming an insulating layer such that the insulating layer is electrically insulated from at least the surfaces of the first conductivity-type semiconductor layer and the active layer of the corresponding LED cell; Forming a transparent electrode layer having a first connection extension extending to the isolation region on the conductive semiconductor layer, wherein the first and second connection extension are at least Provided is a light emitting diode array manufacturing method characterized in that connected to the first or second connection extension corresponding to another LED cell.

Preferably, the step of selectively etching the light emitting stack, forming a resist pattern having a shape corresponding to a desired LED cell structure on the surface of the light emitting stack, and dry the light emitting stack with the resist pattern Etching may be included.

In a particular embodiment, the forming of the metal electrode layer is performed after forming the insulating layer, and the insulating layer may be formed to expose the surface of the second conductive semiconductor layer to be formed of the metal electrode layer.

According to the present invention, the number of unit processes can be greatly reduced by replacing a separate wiring step with an electrode forming step of each cell. Since the wiring area extending from the p-type semiconductor layer is formed as a transparent electrode layer, not only the area where light can be emitted is increased, but also the side area of the LED cell is mainly used to connect the n-type semiconductor layer and the metal electrode layer. Loss due to scattering that can be caused can be reduced, which is also very advantageous in terms of luminous efficiency. In addition, by implementing the connection between the wiring of each cell along the inclined side, it is possible to significantly reduce the occurrence of defects, such as difficulty in the deposition process or short circuit due to the step.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings.

1A and 1B are side cross-sectional and plan views, respectively, illustrating an LED array according to one embodiment of the present invention. This embodiment shows wiring between electrodes of different polarities required for series connection of LED cells. For convenience of understanding, the portion corresponding to the active layer is omitted in the plan view of FIG. 1B.

As shown in FIG. 1A together with FIG. 1B, the LED array 10 according to the present embodiment includes first and second LED cells 10A and 10B formed on a substrate 11 having electrical insulation. . When composed of nitride semiconductors of the LED cells 10A and 10B, the substrate 11 may be a substrate such as a sapphire substrate.

The first and second LED cells 10A and 10B are spaced apart from each other by an isolation region where the substrate 11 is exposed. The separation region may be used as a space for forming connection wirings between the cells 10A and 10B.

The first and second LED cells 10A and 10B may be formed of the first conductive semiconductor layers 12a and 12b, the active layers 15a and 15b, and the second conductive semiconductor layers sequentially formed on the substrate 11, respectively. (16a, 16b) and has an inclined side surface. Since each layer can be formed by the same process, the layers corresponding to the two cells 10A and 10B have the same level.

In addition, as in the present embodiment, all sides may be provided as inclined surfaces, but at least one side may be configured as inclined sides as necessary. Since the inclined side surfaces of the LED cells 10A and 10B have a structure for easily forming a wiring, the LED cells 10A and 10B face each other LED cells 10B and 10A to be connected thereto among various aspects of the LED cells 10A and 10B. Only the sides can be selectively implemented as inclined sides.

When the side inclination angle θ of the LED cells 10A and 10B is small, the step difference of the electrode wiring is secured while sufficiently securing the electrode connection region I utilizing the side surfaces of the first conductivity-type semiconductor layers 12a and 12b. There is an advantage that can be solved, but when the inclination angle θ is too small, there is a disadvantage that the light emitting area is relatively small. The inclination angle θ of this side may be appropriately selected in the range of 10 to 80 °, but may preferably have a range of 30 to 60 °.

The planar structure of each of the LED cells 10A and 10B is illustrated as a quadrangle as shown in FIG. 1B, but different shapes (eg, triangles and hexagons) are more advantageous for integration depending on the position and number of other cells to which each cell is connected. Could be employed.

In the present invention, the wiring structure is implemented with the same material as the electrode material together with the electrode formation, without a metal deposition process for a separate wiring.

That is, as shown in FIG. 1A, the metal electrode layers 22a and 22b of the first and second LED cells 10A and 10B have a first conductivity of the corresponding LED cells 10A and 10B similarly to the conventional electrodes. In addition to being connected to the semiconductor semiconductor layers 12a and 12b, the substrate 11 is formed to have a portion (hereinafter referred to as a "first connection extension") that extends to the exposed isolation region.

In particular, the metal electrode layers 22a and 22b are mainly formed on the inclined side surfaces of the first conductivity-type semiconductor layers 12a and 12b. As in the present exemplary embodiment, a mesa structure may be additionally provided to expose some top regions of the first conductivity-type semiconductor layers 12a and 12b and the metal electrode layers 22a and 22b may be deposited up to the top regions to ensure more stable connection. Can be.

In addition, the transparent electrode layers 25a and 25b of the first and second LED cells 10A and 10B are similar to conventional electrodes, and the second conductivity type semiconductor layers 16a and 16b of the corresponding LED cells 10A and 10B are similar. In addition to being formed on, it has a portion (hereinafter referred to as a "second connection extension") extending to the separation region according to the inclined sides of the corresponding LED cells 10A and 10B.

Since the second connection extension portions of the transparent electrode layers 25a and 25b inevitably pass through the surfaces of the LED cells 10A and 10B, the LED cells 10A and 25A may be prevented from being connected to the active layer or the first conductive semiconductor layer. The insulating layers 23a and 23b are further formed on the surface of 10B). The insulating layers 23a and 23b for preventing such unwanted connection are excluded from the connection regions of the first conductive semiconductor layers 12a and 12b for the metal electrode layers 22a and 22b, as in the present embodiment. And formed almost on the entire surface to serve as a passivation layer.

The first connection extension portions of the metal electrode layers 22a and 22b and the second connection extension portions of the transparent electrode layers 25a and 25b may be connected to each other in the separation region. This wiring connection may be realized by connecting the second connection extension of the first LED cell 10A and the first connection extension of the second LED cell 10B in FIG. 1A.

As described above, according to the present embodiment, the wiring structure of the first and second LED cells 10A and 10B can be realized by extending the deposition regions of the metal electrode layers 22a and 22b and the transparent electrode layers 25a and 25b. Therefore, the electrode forming step and the wiring step can be executed simultaneously, and a part of the wiring covering the surfaces of the LED cells 10A and 10B is formed of the same light-transmitting material as the transparent electrode layers 25a and 25b, so that higher light quantity extraction can be achieved. You can expect the effect of.

In this embodiment, although the electrode connection of the different polarity for the two LED cells (10A, 10B) is illustrated, it can be implemented in a variety of applications.

That is, three or more LED cells can be implemented (see FIG. 4B), and the same polarity connection structure (FIGS. 5A and 5B) can be implemented in a similar manner, and can be driven between AC cells so as to be driven by an AC voltage. AC-driven LED arrays can also be implemented by connecting connection extensions.

2A to 2E are side cross-sectional views of processes for explaining a manufacturing process of the LED array shown in FIG. 1A.

As shown in FIG. 2A, a light emitting stack is formed by sequentially growing the first conductive semiconductor layer 12, the active layer 15, and the second conductive semiconductor layer 16 on the crystal growth insulating substrate 11. . As described above, the light emitting stack may be a nitride single crystal, and in this case, the insulating substrate 11 may be a sapphire substrate.

Subsequently, as illustrated in FIG. 2B, the light emitting stack is selectively etched such that the plurality of LED cells 10A and 10B are formed to be spaced apart from each other by the separation region exposed to the substrate 11.

The first and second LED cells 10A and 10B obtained in the present etching process are formed to have inclined side surfaces. This etching process can be realized by performing dry etching after forming the resist patterns 18a and 18b shown in FIG. That is, the resist patterns 18a and 18b may be employed as materials that can be etched similarly to the light emitting laminate in the dry etching process to be applied, and are formed to correspond to the shapes of the desired LED cells 10A and 10B according to their relative etching rates. do.

More specifically, as shown in FIG. 3, a dry etching process using the resist patterns 18a and 18b having the mesa structure M ′ is performed once to dry the mesa structure M shown in FIG. 2B. It can be obtained by an etching process. Of course, the present etching process may be performed twice as a dry etching process for forming the LED cells 10A and 10B having inclined sides and a dry etching process for forming a mesa structure as necessary.

Next, as shown in FIG. 2C, metal electrode layers 22a and 22b extending to the isolation region are formed on at least one side of the first conductivity-type semiconductor layers 12a and 12b.

As in the present embodiment, in the case of forming the LED cells 10A and 10B having the mesa structure M, it can be further formed in the upper surface regions of the first conductivity-type semiconductor layers 12a and 12b. However, since the side surfaces of the LED cells 10A and 10B are inclined, the area of the side surfaces of the first conductive semiconductor layers 12a and 12b may be relatively large. Therefore, when the side inclination angle is small, the electrode connection may be realized by utilizing only the side surfaces of the first conductivity type semiconductor layers 12a and 12b without a mesa structure.

Next, as shown in FIG. 2D, the insulating layers 23a and 23b are electrically insulated from at least the surfaces of the first conductivity-type semiconductor layers 12a and 12b and the active layers 15a and 15b of the corresponding LED cells 10A and 10B. Form.

As the insulating layers 23a and 23b, conventional light-transmitting insulating materials such as SiO ₂ and SiN _x may be used. The insulating layers 23a and 23b are formed in the regions of the first conductive semiconductor layers 12a and 12b and the active layers 15a and 15b corresponding to the regions where the transparent electrode layers 25a and 25b are to be formed in a subsequent process. Although sufficient, as in the present embodiment, it can be formed on the entire surface of the LED cells 10A and 10B except for the region where the metal electrode layers 22a and 22b are formed, and can be used as a passivation layer. This insulating layer forming process may be carried out before the metal electrode layers 22a and 22b forming process shown in FIG. 2C as necessary.

Next, as shown in FIG. 2E, transparent electrode layers 25a and 25b having first connection extensions extending to the isolation regions are formed on the second conductive semiconductor layers 16a and 16b of the LED cells 10A and 10B. Form.

The transparent electrode layers 25a and 25b may be electrically insulated from the regions of the first conductivity-type semiconductor layers 12a and 12b and the active layers 15a and 15b by the insulating layers 23a and 23b formed in the step of FIG. 2D. have. The first connection extension portion of the transparent electrode layers 25a and 25b of the first LED cell 10A may be connected to the second connection extension portion of the metal electrode layers 22a and 22b of the second LED cell 10B. It extends to form. As a result, a wiring structure for connection between electrodes of different polarities may be realized only by the deposition process for the electrodes of each of the LED cells 10A and 10B.

Of course, in the above-described embodiment, the first connection extension of at least one of the plurality of LED cells is connected to the second connection extension of another LED cell such that different polarities are connected to implement a series connection structure between the LED cells. Although illustrated in the form connected to, it may have a structure in which electrodes of the same polarity are connected between some other LED cells (see FIGS. 5A and 5B).

4A is an AC driving LED circuit, and FIG. 4B is a plan view illustrating an LED array implemented according to the LED circuit of FIG. 4A as an example of the present invention.

Fig. 4A shows a simple AC driven LED circuit. Like the equivalent circuit shown in Fig. 4A, the first and second LED cells 30A, 30B and the third and fourth LED cells 30C, 30C are connected in series in two columns, respectively. In addition, the first and third LED cells 30A and 30C and the second and fourth LED cells 30B and 30D are connected to the first and second external contacts C1 and C2 through electrodes having different polarities, respectively. do.

In such a circuit, when a predetermined alternating voltage is applied to the first and second external contacts C1 and C2, two columns of LED cells emit light alternately, so that light emission corresponding to two LED cells can be continuously obtained. have. More specifically, the heat of the first and second LED cells 30A and 30B may be driven in a half cycle, and the heat of the third and fourth LED cells 30C and 30D may be driven in another half cycle.

As such, the four LED cells 30A, 30B, 30C, and 30D shown in FIG. 4A take a manner in which electrodes of different polarities are connected to each other. This connection may be implemented as an arrangement as shown in FIG. 4B (in FIG. 4B the active layer is omitted for simplicity).

Referring to FIG. 4B, each of the LED cells 30A, 30B, 30C, and 30D is formed of the first conductive semiconductor layer 32a, 32b, 32c, and 32d, and the active layer (not shown) similarly to the form described with reference to FIGS. 1A and 1B. C) and second conductivity-type semiconductor layers 36a, 36b, 36c, and 36d. In addition, the metal electrode layers 42a, 42b, 42c, and 42d of each of the LED cells 30A, 30B, 30C, and 30D are connected to the first conductivity type semiconductor layers 32a, 32b, 32c, and 32d to be connected to the LED cells. Extends into an adjacent separation region. Similarly, the transparent electrode layers 45a, 45b, 45c, and 45d of each of the LED cells 30A, 30B, 30C, and 30D are formed on the second conductive semiconductor layers 36a, 36b, 36c, and 36d, respectively. Along the inclined side of the cell, it extends to the isolation region so as to be connected to the metal electrode layer of the LED cell to be connected.

Through this connection, the LED cells 30A, 30B, 30C, and 30D may be connected to different polarities so as to correspond to the circuit shown in FIG. 4A. In addition, as in the present embodiment, when the plurality of LED cells 30A, 30B, 30C, and 30D are connected to each other, it is preferable to arrange LED cells to be directly connected to each other.

The AC driven LED arrays of FIGS. 4A and 4B are just examples of various forms. In addition to the circuits or arrays illustrated herein, various forms may be implemented, and in some cases, connection of electrodes having the same polarity may be required, and three or more LEDs may be connected to the same contact point. .

5A and 5B are side cross-sectional views each showing an LED array according to another embodiment of the present invention (connection of the same polarity).

As shown in Fig. 5A, the LED array 50 according to the present embodiment includes first and second LED cells 50A and 50B formed on a substrate 51 having electrical insulation. The two LED cells 50A and 50B are formed on the substrate 11, respectively, in order to form first conductive semiconductor layers 52a and 52b, active layers 55a and 55b, and second conductive semiconductor layers 56a and 56a. 56b) and has an inclined side.

In the present embodiment, the first LED cell 50A and the second LED cell 50B have a structure sharing the transparent electrode layer 65 corresponding to the second electrode. That is, the transparent electrode layers 65 of the first and second LED cells 50A and 50B extend to the isolation region and are connected to each other. Second electrodes of the first and second LED cells may be connected to each other. In addition, each LED cell 50A, 50B has insulating layers 63a, 63b to prevent the connection between the transparent electrode layer and the surface of the unwanted cell.

Of course, although not shown, the first and second LED cells 50A and 50B may include a transparent electrode layer or a metal electrode layer of another cell disposed adjacent to another side not shown, and a metal electrode layer corresponding to the first electrode thereof. Each connection extension may be connected to each other.

As another example, the LED array 70 shown in FIG. 5B includes first and second LED cells 70A, 70B formed on a substrate 71 having electrical insulation. Similar to the previous example, the two LED cells 70A and 70B are formed of the first conductive semiconductor layers 72a and 72b, the active layers 75a and 75b, and the second conductive layers sequentially formed on the substrate 71, respectively. Type semiconductor layers 76a and 76b and have inclined side surfaces.

In the present embodiment, the first LED cell 70A and the second LED cell 70B have a structure sharing the metal electrode layer 82 corresponding to the first electrode. That is, the metal electrode layers 82 of the first and second LED cells 70A and 70B extend to the isolation region and are connected to each other. First electrodes of the first and second LED cells 50A and 50B may be connected to each other.

In addition, each LED cell 70A, 70B has an insulating layer 83 for protecting the device. Of course, although not shown, the first and second LED cells 70A and 70B are insulated from the insulating layer 83 when the transparent electrode layer extends for connection with other cells disposed adjacent to other side not shown. ) May be used as a layer to prevent electrical connection with the active layer of the LED cell and the first conductivity type semiconductor layer.

As such, the present invention is not limited by the above-described embodiments and the accompanying drawings, and is intended to be limited by the appended claims, and various forms of substitution may be made without departing from the technical spirit of the present invention described in the claims. It will be apparent to one of ordinary skill in the art that modifications, variations and variations are possible.

1A and 1B are side cross-sectional and plan views, respectively, illustrating an LED array according to one embodiment (connection of different polarities) of the present invention.

2A to 2E are side cross-sectional views of processes for explaining a manufacturing process of the LED array shown in FIG. 1A.

3 is a cross-sectional view illustrating the etching process for obtaining the LED cell structure of FIG. 2B.

FIG. 4A is an LED circuit that can be driven for an alternating current operation, and FIG. 4B is a plan view showing an LED array implemented according to the LED circuit of FIG. 4A as an example of the present invention.

5A and 5B are side cross-sectional views each showing an LED array according to another embodiment of the present invention (connection of the same polarity).

Claims (20)

A substrate having electrical insulation; A plurality of LED cells spaced apart from each other and inclined at least one side by an isolation region in which the substrate is exposed on the substrate—the LED cells each having a first conductivity type semiconductor layer, an active layer, and a second layer sequentially formed on the substrate; A conductive semiconductor layer; A metal having a first connection extension formed on a portion of an upper surface of the first conductivity-type semiconductor layer exposed by a mesa structure in the LED cell and an inclined side surface of the first conductivity-type semiconductor layer and extending to the isolation region; An electrode layer; A transparent electrode layer formed on the second conductive semiconductor layer of the LED cell and having a second connection extension part extending to the isolation region according to an inclined side surface of the LED cell; And An insulating layer formed on the surface of the LED cell such that the transparent electrode layer, the active layer of the corresponding LED cell, and the first conductive semiconductor layer are electrically insulated from each other, And the first and second connection extensions are connected to first or second connection extensions corresponding to at least another LED cell. The method of claim 1, And a first connection extension of at least one LED cell of the plurality of LED cells is connected to a second connection extension of another LED cell. The method of claim 1, And a first connection extension of at least one LED cell of the plurality of LED cells is connected to a first connection extension of another LED cell. delete The method of claim 1, The plurality of LED cells are LED cells to be directly connected by the first and second connection extension is disposed adjacent, the light emitting diode array characterized in that the opposite surface is formed in the inclined side. The method of claim 1, An inclined side surface of the plurality of LED cells is inclined at an angle of 30 to 60 ° LED array. The method of claim 1, And a first conductive semiconductor layer of the plurality of LED cells has an upper surface region in which a portion of the second conductive semiconductor layer and the active layer are etched and exposed. The method of claim 7, wherein The metal electrode layer is formed to the upper region of the first conductivity type semiconductor layer. The method of claim 1, And the first and second connection extensions are connected to be driven by AC voltages of the plurality of LED cells. Forming a light emitting laminate having a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially grown on the electrically insulating substrate; Selectively etching the light emitting stack to form a plurality of LED cells inclined at least one side thereof while being spaced apart from each other by the separation region where the substrate is exposed; Removing a portion of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer to form a mesa structure to expose a portion of the upper surface of the first conductive semiconductor layer; Forming a metal electrode layer having a first connection extension extending to the isolation region on the exposed top surface and at least one side surface of the first conductivity type semiconductor layer of the LED cell; And After forming the insulating layer to be electrically insulated at least on the surface of the first conductive semiconductor layer and the active layer of the LED cell, the second connection extension portion extending to the isolation region on the second conductive semiconductor layer of the LED cell Forming a transparent electrode layer having And the first and second connection extensions are connected to at least a first or second connection extension corresponding to at least another LED cell. The method of claim 10, And a first connection extension of at least one LED cell of the plurality of LED cells is connected to a second connection extension of another LED cell. The method of claim 10, And a first connection extension of at least one LED cell of the plurality of LED cells is connected to a first connection extension of another LED cell. delete The method of claim 10, Selectively etching the light emitting laminate, Forming a resist pattern having a shape corresponding to a desired LED cell structure on the surface of the light emitting stack, and dry etching the light emitting stack together with the resist pattern. . The method of claim 14, The plurality of LED cells are LED cells to be directly connected by the first and second connection extension is disposed adjacent, the light emitting diode array manufacturing method, characterized in that the opposite surface is formed in the inclined side. The method of claim 14, And a slanted side surface of the plurality of LED cells is inclined at an angle of 30 to 60 degrees. The method of claim 14, And a first conductive semiconductor layer of the plurality of LED cells has an upper surface region in which a portion of the second conductive semiconductor layer and the active layer are etched and exposed. The method of claim 17, The metal electrode layer is a light emitting diode array manufacturing method, characterized in that formed to the upper region of the first conductive semiconductor layer. The method of claim 10, The forming of the metal electrode layer is performed after forming the insulating layer, wherein the insulating layer is formed to expose the surface of the second conductive semiconductor layer to be formed of the metal electrode layer. . The method of claim 10, And the first and second connection extension parts are connected to be driven by AC voltages of the plurality of LED cells.

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