KR102489464B1 - Light emitting device and method of fabricating the same - Google Patents

Abstract

The embodiment relates to a light emitting device with reduced manufacturing cost and a simplified process and a manufacturing method thereof, and the light emitting device of the embodiment includes a light emitting structure including a first semiconductor layer, an active layer containing europium, and a second semiconductor layer sequentially stacked. ; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the second semiconductor layer.

Description

Light emitting device and manufacturing method thereof

Embodiments of the present invention relate to a light emitting device and a manufacturing method thereof.

A light emitting diode (LED) is one of light emitting devices that emits light when a current is applied thereto. A light emitting diode can emit light with high efficiency at a low voltage and thus has an excellent energy saving effect. Recently, the luminance problem of light emitting diodes has been greatly improved, and they are applied to various devices such as backlight units of liquid crystal display devices, electronic signboards, displays, and home appliances.

In particular, light emitting diodes may be formed very small in a micro size and disposed in each pixel defined by crossing a data line and a gate line of a display device.

However, a substrate for forming a light emitting diode emitting red light is different from a substrate for forming a light emitting diode emitting green or blue light. For example, a substrate for forming a light emitting diode emitting red light is gallium arsenide (GaAs), and a substrate for forming a light emitting diode emitting green or blue light is sapphire ( Al ₂ O ₃ ).

Therefore, light emitting diodes emitting green or blue light and light emitting diodes emitting red light must be formed on substrates made of different materials. In addition, the material of the active layer of the light emitting diode emitting red light is also different from that of the active layer of the light emitting diode emitting green or blue light, which complicates the process and increases manufacturing cost.

Embodiments of the present invention provide a light emitting device and a method for manufacturing the same, which reduce manufacturing costs and simplify processes.

The light emitting device of the embodiment includes a light emitting structure including a first semiconductor layer, an active layer containing europium, and a second semiconductor layer sequentially stacked; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the second semiconductor layer.

A method of manufacturing a light emitting device of an embodiment includes forming a light emitting structure in which a first semiconductor layer, an active layer containing europium, and a second semiconductor layer are sequentially stacked on a substrate; forming a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the second semiconductor layer.

A method of manufacturing a light emitting device according to another embodiment includes forming a first semiconductor layer on a substrate including first, second, and third regions; forming a first active layer containing indium on the first semiconductor layer using a first mask exposing only the first region; forming a second active layer containing indium on the first semiconductor layer using a second mask exposing only the second region; forming a third active layer containing europium on the first semiconductor layer using a third mask exposing only the third region; Forming a second semiconductor layer on the first semiconductor layer and the first, second and third active layers to include the first semiconductor layer, the first, second and third active layers and the second semiconductor layer Forming a light emitting structure; separating the light emitting structure to form first, second, and third light emitting structures in the first, second, and third regions, respectively; Forming a first electrode connected to the first semiconductor layer of the first, second, and third light emitting structures, respectively; and forming second electrodes respectively connected to the second semiconductor layer of the first, second, and third light emitting structures.

According to the embodiment, the light emitting device and its manufacturing method according to embodiments of the present invention can reduce manufacturing costs and simplify processes by forming light emitting diodes emitting red, green, and blue light on the same substrate.

1A, 1B and 1C are cross-sectional views of a light emitting device of the present invention.
2A to 2G are process cross-sectional views illustrating a method of manufacturing a light emitting device according to an embodiment of the present invention.
3A to 3K are process cross-sectional views illustrating a method of manufacturing a light emitting device according to another embodiment of the present invention.

Since the present invention can make various changes and have various embodiments, specific embodiments will be illustrated and described in the drawings. However, this is not intended to limit the embodiments of the present invention to specific embodiments, and should be understood to include all changes, equivalents, or substitutes included in the spirit and technical scope of the embodiments.

Terms including ordinal numbers, such as first and second, may be used to describe various components, but the components are not limited by the terms. The terms are used for the purpose of distinguishing one component from another. For example, a second element may be named a first element without departing from the scope of rights of an embodiment, and similarly, the first element may also be named a second element. The terms and/or include any combination of a plurality of related recited items or any of a plurality of related recited items.

It is understood that when an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, but other elements may exist in the middle. It should be. On the other hand, when a component is referred to as “directly connected” or “directly connected” to another component, it should be understood that no other component exists in the middle.

Terms used in this application are only used to describe specific embodiments, and are not intended to limit the embodiments of the present invention. Singular expressions include plural expressions unless the context clearly dictates otherwise. In this application, terms such as "comprise" or "having" are intended to designate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, but one or more other features It should be understood that the presence or addition of numbers, steps, operations, components, parts, or combinations thereof is not precluded.

In the description of the embodiment, in the case where an element is described as being formed “on or under” of another element, on or under (on or under) or under) includes both elements formed by directly contacting each other or by indirectly placing one or more other elements between the two elements. In addition, when expressed as "on or under", it may include the meaning of not only the upward direction but also the downward direction based on one element.

Hereinafter, the embodiment will be described in detail with reference to the accompanying drawings, but the same or corresponding components regardless of reference numerals are given the same reference numerals, and overlapping descriptions thereof will be omitted.

Hereinafter, a light emitting device of an embodiment will be described in detail with reference to the accompanying drawings.

1A is a cross-sectional view of a light emitting device of the present invention.

As shown in FIG. 1A, the light emitting device 220 of the present invention emits light including a substrate 100, a first semiconductor layer 110a formed on the substrate 100, an active layer 120a, and a second semiconductor layer 130a. It includes a structure 210a, a first electrode 140a connected to the first semiconductor layer 110a, and a second electrode 160a electrically connected to the second semiconductor layer 130a. At this time, the active layer 120a includes a compound semiconductor doped with europium (Eu).

The substrate 100 may be formed of a material selected from sapphire (Al ₂ O ₃ ), SiC, GaN, ZnO, Si, GaP, InP, and Ge, but is not limited thereto. The substrate 100 may be easily separated from the light emitting structure 210a to reduce the thickness of the light emitting device 220 .

The first semiconductor layer 110a may be implemented with a compound semiconductor such as group III-V or group II-VI, and may be doped with a first dopant. The first semiconductor layer 110a is a semiconductor having a composition formula of In _x Al _y Ga ₁ -x- _y N ( _0≤x≤≤1 , 0≤≤y≤≤1, 0≤≤x+y≤≤1) It may be formed of a material selected from AlInN, AlGaAs, GaP, GaAs, GaAsP, or AlGaInP. When the first dopant is an n-type dopant such as Si, Ge, Sn, Se, or Te, the first semiconductor layer 110a may be an n-type semiconductor layer.

The second semiconductor layer 130a may be implemented with a compound semiconductor such as group III-V or group II-VI, and may be doped with a second dopant. The second semiconductor layer 130a is a semiconductor having a composition formula of Al _x In _y Ga _(1-xy) N (0≤x≤≤1, 0≤≤y≤≤1, 0≤≤x+y≤≤1) It may be formed of any one or more of materials, InAlGaN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP, but is not limited thereto. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second semiconductor layer 130a may be a p-type semiconductor layer.

The active layer 120a may be implemented with a compound semiconductor such as group III-V or group II-VI doped with europium (Eu). For example, the active layer 120a may be formed of GaN, InGaN, AlGaN, InAlGaN, The same compound semiconductor material may be doped with europium.

Europium doped in the active layer 120a is in an ionic state. Electrons and holes injected from the first electrode 140a and the second electrode 160a recombine in the active layer 120a, and a transition occurs in the europium ion (Eu ³⁺ ), resulting in a red color (590 nm to 590 nm) in the active layer 120a. 670 nm) light can be emitted.

One end of the first electrode 140a may contact the first semiconductor layer 110a and the other end may extend to the upper surface of the substrate 100 . Therefore, when the light emitting structure 210a is separated from the substrate 100, the first electrode 140a may be exposed on the lower surface of the light emitting device 220.

In order to display an image by disposing the light emitting element 220 for each pixel of the display device and driving the light emitting element 220, the light emitting element 220 must be electrically connected to the circuit pattern of the pixel. Therefore, the substrate 100 of the light emitting element 220 is removed and the light emitting element 220 is disposed on the pixel of the display device so that the first electrode 140a exposed from the lower part of the light emitting element 220 is electrically connected to the circuit pattern. can be connected.

The insulating layer 150a may be disposed to surround the first electrode 140a and the light emitting structure 210a so as to expose a portion of the second semiconductor layer 130a. The insulating film 150a prevents electrical connection between the first electrode 140a and the second electrode 160a. The insulating film 150a as described above is at least one selected from the group consisting of SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, etc. can be formed, but is not limited thereto.

The second electrode 160a may be electrically connected to the second semiconductor layer 130a exposed by the insulating layer 150a. Although not shown, an ohmic layer may be further disposed between the second semiconductor layer 130a and the second electrode 160a. Current can be uniformly diffused from the second electrode 160a to the second semiconductor layer 130a through the ohmic layer.

The ohmic layer is ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, or Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, Au, Hf It may be formed including at least one of, but is not limited to these materials.

1b and 1c are cross-sectional views of a light emitting device of an embodiment of the present invention emitting blue light and green light, respectively.

The light emitting device 230 emitting blue light of FIG. 1B and the light emitting device 240 emitting green light of FIG. 1C have the same components as the light emitting device 220 of FIG. 1A except for an active layer. Therefore, descriptions of components other than the active layer are omitted.

As shown in FIG. 1B , the active layer 120b of the light emitting device 230 emitting blue light may include indium (In) doped in a compound semiconductor material such as GaN, InGaN, AlGaN, or InAlGaN. Also, as shown in FIG. 1C , the active layer 120c of the light emitting device 240 emitting green light may include indium (In) doped in a compound semiconductor material such as GaN, InGaN, AlGaN, or InAlGaN. In this case, the active layer 120b of the light emitting element 230 emitting blue light and the active layer 120c of the light emitting element 240 emitting green light have different indium doping concentrations.

As the indium content increases, the wavelength of light emitted from the active layer shifts from a short wavelength to a long wavelength, so the light emitting device 240 including the active layer 120c having a high indium content emits green (490 nm to 560 nm) light. The light emitting device 230 including the active layer 120b having a low content may emit blue (440 nm to 480 nm) light. The concentration of indium doped into the active layer can be easily controlled, and the purity of blue and green colors can be adjusted by adjusting the concentration of indium.

As described above, a conventional light emitting element emitting red light is formed on a substrate containing gallium arsenide (GaAs). In addition, the active layer of the light emitting device emitting red light is made of a material such as GaP, and the light emitting device emitting green or blue light is doped with indium (In) in a compound semiconductor material such as GaN, InGaN, AlGaN, or InAlGaN. is a structure Therefore, a light emitting element emitting red light and a light emitting element emitting blue and green light cannot be formed on the same substrate through the same process. Furthermore, since the driving voltage and current conditions of each light emitting device are different, the reliability of the light emitting devices emitting different lights is different, and the manufacturing cost is increased and the process is complicated.

On the other hand, in the present invention, the light emitting device 220 emitting red light may be formed on the substrate 100 including sapphire, like the light emitting devices 230 and 240 emitting blue and green light. In addition, the active layers 120a, 120b, and 120c of the light emitting devices 220, 230, and 240 emitting red, blue, and green light are all GaN-based materials doped with europium (Eu) or indium (In), Since it can be formed, the present invention can form the light emitting elements 220, 230, and 240 emitting blue and green light through the same process. Therefore, in the present invention, current injection conditions for driving each of the light emitting devices 22, 230, and 240 are the same, and manufacturing costs can be reduced and processes can be simplified.

Moreover, since a conventional substrate containing gallium arsenide (GaAs) is opaque, a separate technique for separating the substrate is required, but the substrate 100 containing sapphire has light transmission, so that laser lift off (LLO) It can be easily separated using the method. Accordingly, the light emitting devices 220 , 230 , and 240 of the present invention may be separated from the substrate 100 by a laser lift off (LLO) method and disposed on each pixel of the display device.

Hereinafter, a method of manufacturing a light emitting device according to an embodiment of the present invention will be described in detail.

2a to 2g are process cross-sectional views illustrating a method of manufacturing a light emitting device according to an embodiment of the present invention, showing a method of manufacturing a light emitting device emitting red light.

As shown in FIG. 2A , the light emitting structure 130 is formed on the substrate 100 . The substrate 100 may be formed of a material selected from sapphire (Al ₂ O ₃ ), SiC, GaN, ZnO, Si, GaP, InP, and Ge, but is not limited thereto. The light emitting structure 210 may include a plurality of compound semiconductor layers, and the light emitting structure 210 may include a first semiconductor layer 110a, an active layer 120a, and a second semiconductor layer 130a on the substrate 100. It can be formed by growing them sequentially.

The light emitting structure 210 may be formed by molecular beam epitaxy (MBE), physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), or sputtering. It can be formed through methods such as sputtering and metal organic chemical vapor deposition.

The first semiconductor layer 110a may be implemented with a compound semiconductor such as group III-V or group II-VI, and may be doped with a first dopant. The first semiconductor layer 110a is a semiconductor having a composition formula of In _x Al _y Ga ₁ -x- _y N ( _0≤x≤≤1 , 0≤≤y≤≤1, 0≤≤x+y≤≤1) It may be formed of a material selected from AlInN, AlGaAs, GaP, GaAs, GaAsP, or AlGaInP. When the first dopant is an n-type dopant such as Si, Ge, Sn, Se, or Te, the first semiconductor layer 110a may be an n-type semiconductor layer.

The active layer 120a is provided between the first semiconductor layer 110a and the second semiconductor layer 130a. The active layer 120a is a layer in which electrons (or holes) injected through the first semiconductor layer 110a and holes (or electrons) injected through the second semiconductor layer 130a meet. The active layer 120a as described above transitions to a lower energy level as electrons and holes recombine, and can generate light having a wavelength corresponding thereto.

In order for the light emitting device to emit red light, the active layer 120a may be implemented with a compound semiconductor such as group III-V or group II-VI doped with a second dopant, and the second dopant may be europium (Eu). can Europium doped in the active layer 130b is in an ionic state, ^{and red (590 nm to 670 nm) light may be emitted by a transition occurring in the europium ion (Eu 3+ )} .

Although not shown, the active layer of the light emitting device emitting blue or green light is doped with indium (In), and the active layer of the light emitting device emitting blue light and the active layer of the light emitting device emitting green light have an indium doping concentration. It is different.

Also, the second semiconductor layer 130a may be implemented with a compound semiconductor such as group III-V or group II-VI, and may be doped with a second dopant. The second semiconductor layer 130a is a semiconductor having a composition formula of Al _x In _y Ga _(1-xy) N (0≤x≤≤1, 0≤≤y≤≤1, 0≤≤x+y≤≤1) It may be formed of any one or more of materials, InAlGaN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP, but is not limited thereto. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second semiconductor layer 130a may be a p-type semiconductor layer.

Subsequently, as shown in FIG. 2B, the light emitting structure 210 is mesa-etched to remove portions of the first semiconductor layer 110a, the active layer 120a, and the second semiconductor layer 130a. The first semiconductor layer 110a may be exposed by mesa etching. Then, as shown in FIG. 2c, isolation etching is performed to separate adjacent light emitting structures. The substrate 100 between adjacent light emitting structures may be exposed through isolation etching.

As shown in FIG. 2D, the first electrode 140a electrically connected to the exposed first semiconductor layer 110a by partially removing the first semiconductor layer 110a, the active layer 120a, and the second semiconductor layer 130a is formed. form One end of the first electrode 140a may be directly connected to the first semiconductor layer 110a, and the other end may extend to the upper surface of the substrate 100. The first electrode 140a may be formed of a transparent conductive oxide (TCO) or an opaque metal, or may be formed of one or a plurality of layers in which a transparent conductive oxide film and an opaque metal are mixed.

Subsequently, as shown in FIG. 2E , an insulating film 150a is formed on the light emitting structure 210a and the substrate 100 to expose a portion of the second semiconductor layer 130a. The insulating film 150a may be formed by selecting at least one from the group consisting of SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, and the like. and is not limited thereto. The insulating film 150a insulates the second electrode 160a from the first electrode 140a, and the insulating film 150a is preferably formed to completely surround the first electrode 140a.

And, as shown in FIG. 2F, a second electrode 160a is formed on the second semiconductor layer 130a exposed by the insulating film 150a. The second electrode 160a is electrically connected to the second semiconductor layer 130a.

Although not shown, an ohmic layer may be further formed between the second semiconductor layer 130a and the second electrode 160a. The ohmic layer is formed on the light emitting structure 210 after the light emitting structure 210 is formed, and is separated into a plurality of pieces when the light emitting structure 210 is mesa-etched, or individually formed on the light emitting structure 210a separated into a plurality of pieces. You may.

And, as shown in FIG. 2G , the light emitting structure may be separated from the substrate 100 using a laser lift off (LLO) method or the like. In particular, an image can be displayed by forming a light emitting element as small as several tens of microns and disposing the light emitting element 220 from which the substrate 100 is removed as described above at each pixel of the display device.

Although the manufacturing method of the light emitting device 220 emitting red light has been described above, the light emitting devices 230 and 240 emitting blue and green light may also be formed on the substrate 100 in the same manner. In this case, the light emitting elements 220, 230, and 240 may be formed by changing only the material forming the active layer 120a.

In addition, all of the light emitting devices 220 , 230 , and 240 emitting blue, green, and red light may be formed on one substrate 100 .

3A to 3K are process cross-sectional views illustrating a method of manufacturing a light emitting device according to another embodiment of the present invention.

As shown in FIG. 3A , a first semiconductor layer 110 is formed on the entire surface of the substrate 100 including the first, second, and third regions A, B, and C. The first semiconductor layer 110 may be implemented with a compound semiconductor such as group III-V or group II-VI, and may be doped with a first dopant.

The first semiconductor layer 110 is formed by molecular beam epitaxy (MBE), physical vapor deposition (PVD), chemical vapor deposition (CVD), or plasma laser deposition (PLD). , sputtering, metal organic chemical vapor deposition, and the like.

Subsequently, as shown in FIG. 3B, a first active layer 120a is formed in the first region A using a first mask 300a exposing only the first semiconductor layer 110 corresponding to the first region A. do. For example, in order for the light emitting device including the first active layer 120a to emit red light, the first active layer 120a may be formed of a compound semiconductor such as group III-V or group II-VI containing europium. there is.

And, as shown in FIG. 3C, the second active layer 120b is formed in the second region (B) using the second mask (300b) exposing only the first semiconductor layer 110 corresponding to the second region (B). do. For example, in order for a light emitting device including the second active layer 120b to emit blue light, the second active layer 120b may be formed of a compound semiconductor such as group III-V or group II-VI including indium. there is.

Subsequently, as shown in FIG. 3D, a third active layer 120c is formed in the third region C using a third mask 300c exposing only the first semiconductor layer 110 corresponding to the third region C. do. For example, in order for the light emitting device including the third active layer 120c to emit green light, the third active layer 120c may be formed of a compound semiconductor such as group III-V or group II-VI including indium. there is. In this case, the third active layer 120c may be doped with a higher concentration of indium (In) than the second active layer 120b.

In another embodiment of the present invention as described above, the first, second, and third active layers 120a, 120b, and 120c of different materials are formed on the first semiconductor layer 110 using the masks 300a, 300b, and 300c. can form

Subsequently, as shown in FIG. 3E, a second semiconductor layer 130 is formed on the first, second, and third active layers 120a, 120b, and 120c. The second semiconductor layer 130 may be implemented with a compound semiconductor such as group III-V or group II-VI, and may be doped with a second dopant. The second semiconductor layer 130 may be integrally formed on the entire surface of the first, second, and third regions A, B, and C.

As shown in FIG. 3F, the light emitting structure 140 is mesa-etched to form the first semiconductor layer 110, the first, second, and third active layers 120a, 120b, and 120c, and the second semiconductor layer 130 ) part of the The first semiconductor layer 110 may be exposed by mesa etching. Subsequently, as shown in FIG. 3G, isolation etching is performed to separate the light emitting structure 140, and the separated first, second, and third light emitting structures 210a, 210b, and 210c are different from each other in active layers 120a. , 120b, 120c). In addition, the substrate 100 may be exposed in regions where the first, second, and third light emitting structures 210a, 210b, and 210c are separated from each other.

As shown in FIG. 3H , a first electrode 140 electrically connected to the first semiconductor layer 110 is formed. At this time, the first electrode 140 surrounds the side surfaces of the first, second, and third light emitting structures 210a, 210b, and 210c, and specifically, one end of the first electrode 140 is the first semiconductor layer ( 110) and the other end may extend to the upper surface of the substrate 100.

Next, as shown in FIG. 3I , an insulating film 150 is formed to expose a portion of the second semiconductor layer 130 . The insulating film 150 may be formed by selecting at least one from the group consisting of SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, and the like. and is not limited thereto. The insulating film 150 insulates the second electrode 160 and the first electrode 140 to be described later, and the insulating film 150 may be formed to completely surround the first electrode 140, but is not limited thereto.

Then, as shown in FIG. 3J , a second electrode 160 is formed on the second semiconductor layer 130 exposed by the insulating film 150 . The second electrode 160 is electrically connected to the second semiconductor layer 130 .

And, as shown in FIG. 3K , desired light emitting elements 220 , 230 , and 240 may be selectively separated from the substrate 100 using a laser lift off (LLO) method or the like.

As described above, in another embodiment of the present invention, the light emitting devices 220, 230, and 240 emitting different lights may be formed on one substrate 100 using the masks 300a, 300b, and 300c. there is. In this case, manufacturing cost can be reduced.

The light emitting elements 220, 230, and 240 of the present invention as described above are formed in a micro size (less than 50 μm × 50 μm) smaller than the pixel size of the display device, and the data line and the gate line of the display device cross each other. It can be arranged for each defined pixel. In this case, the light emitting elements 220, 230, and 240 are not a backlight unit disposed on the back of a liquid crystal cell or an organic light emitting cell of a display device, but first electrodes 140a, 140b, and 140c are connected to a data line in a pixel. , the second electrodes 160a, 160b, and 160c are connected to the common electrode, so that they can be directly driven by the driver of the display device.

Accordingly, the display device including the light emitting device of the present invention can display an image through red, green, and blue lights generated from the light emitting device, respectively, without a color filter.

The embodiments of the present invention described above are not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes are possible within a range that does not deviate from the technical spirit of the embodiments. It will be clear to those skilled in the art.

100: substrate 110, 110a, 110b, 110c: first semiconductor layer
120a, 120b, 120c: active layer 130, 130a, 130b, 130c: second semiconductor layer
140a, 140b, 140c: first electrode 150a, 150b, 150c: insulating layer
160a, 150b, 160c: Second electrode 140, 210, 210a, 210b, 210c: Light emitting structure
220, 230, 240: light emitting element 300a, 300b, 300c: mask

Claims (14)

A substrate divided into a first region, a second region, and a third region, a first semiconductor layer formed on the first, second, and third regions of the substrate, and formed on the first semiconductor layer on the first region and a first active layer containing europium, formed on the first semiconductor layer on the second region, and containing indium, and formed on the first semiconductor layer on the third region and formed on the second active layer, first, second, and third light emitting structures including a third active layer containing a lot of indium, and a second semiconductor layer formed on the first, second, and third active layers;
a first electrode electrically connected to the first semiconductor layer;
a second electrode electrically connected to the second semiconductor layer; and
Including an insulating layer disposed on the light emitting structure,
The first electrode includes a first end connected to the first semiconductor layer and a second end disposed on a side surface of the first semiconductor layer,
The insulating layer entirely covers the upper and side surfaces of the first electrode. According to claim 1,
Further comprising a substrate disposed under the light emitting structure,
The first electrode is a light emitting element in which the second end extends to the upper surface of the substrate. According to claim 2,
The substrate is a light emitting device comprising sapphire. Dividing the substrate into a first region, a second region, and a third region;
A first semiconductor layer is formed on the first, second, and third regions of the substrate, a first active layer containing europium is formed on the first semiconductor layer on the first region, and a first active layer is formed on the second region. A second active layer containing indium is formed on one semiconductor layer, a third active layer containing more indium than the second active layer is formed on the first semiconductor layer on the third region, and the first and second active layers are formed. , forming a second semiconductor layer on the third active layer to form the first, second, and third light emitting structures;
forming a first electrode electrically connected to the first semiconductor layer;
Forming an insulating layer on the light emitting structure and the first electrode;
Forming a second electrode electrically connected to the second semiconductor layer,
The first electrode has a first end connected to the first semiconductor layer and a second end extending to the upper surface of the substrate,
Wherein the insulating layer entirely covers the top and side surfaces of the first electrode. According to claim 4,
A method of manufacturing a light emitting device in which the substrate comprises sapphire. delete According to claim 4,
Method of manufacturing a light emitting device further comprising the step of separating the light emitting structure and the substrate. According to claim 7,
Method of manufacturing a light emitting device for separating the light emitting structure and the substrate by a laser lift-off method. forming a first semiconductor layer on a substrate including first, second and third regions;
forming a first active layer containing indium on the first semiconductor layer using a first mask exposing only the first region;
forming a second active layer containing indium on the first semiconductor layer using a second mask exposing only the second region;
forming a third active layer containing europium on the first semiconductor layer using a third mask exposing only the third region;
Forming a second semiconductor layer on the first semiconductor layer and the first, second and third active layers to include the first semiconductor layer, the first, second and third active layers and the second semiconductor layer Forming a light emitting structure;
separating the light emitting structure to form first, second, and third light emitting structures in the first, second, and third regions, respectively;
Forming a first electrode connected to the first semiconductor layer of the first, second, and third light emitting structures, respectively; and
Method of manufacturing a light emitting device comprising the step of forming a second electrode connected to the second semiconductor layer of the first, second, and third light emitting structures, respectively. According to claim 9,
Method of manufacturing a light emitting device in which the indium contained in the first active layer and the indium content contained in the second active layer are different. According to claim 9,
A method of manufacturing a light emitting device in which the substrate comprises sapphire. According to claim 9,
The first electrode has one end connected to the first semiconductor layer and the other end extending to the upper surface of the substrate. According to claim 9,
Method of manufacturing a light emitting device further comprising the step of separating the first, second and third light emitting structures and the substrate. According to claim 13,
Method of manufacturing a light emitting device for separating the light emitting structure and the substrate by a laser lift-off method.

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