KR20170099207A - Light emitting device and method of fabricating the same - Google Patents

Abstract

According to an embodiment, the present invention relates to a light emitting device and a method for fabricating the same, which reduce fabricating costs and simplify a manufacturing process. The light emitting device comprises: a light emitting structure including a first semiconductor layer, an active layer including europium, and a second semiconductor layer which are sequentially stacked; a first electrode electrically connected with the first semiconductor layer; and a second electrode electrically connected with the second semiconductor layer.

Description

TECHNICAL FIELD [0001] The present invention relates to a light emitting device,

Embodiments of the present invention relate to a light emitting device and a method of manufacturing the same.

A light emitting diode (LED) is one of light emitting devices that emits light when current is applied. The light emitting diode is capable of emitting light with high efficiency at a low voltage, thus providing excellent energy saving effect. In recent years, the problem of luminance of a light emitting diode has been greatly improved, and it has been applied to various devices such as a backlight unit of a liquid crystal display device, a display board, a display device, and a home appliance.

In particular, the light emitting diode may be formed in a very small size as a micro size, and may be arranged for each pixel defined by intersecting the data line and the gate line of the display device.

However, the substrate for forming the light emitting diode that emits red light and the substrate for forming the light emitting diode that emits green or blue light are different from each other. For example, a substrate for forming a light emitting diode emitting red light is gallium arsenide (GaAs), and a substrate for forming a light emitting diode emitting green or blue light is sapphire ( Al ₂ O ₃ ).

Thus, light emitting diodes emitting green or blue light and light emitting diodes emitting red light have to be formed on different substrates. Further, the material of the active layer of the light emitting diode that emits red light is also different from the active layer of the light emitting diode that emits green or blue light, complicating the process and increasing the manufacturing cost.

Embodiments of the present invention provide a light emitting device and a method of manufacturing the same that reduce manufacturing costs and simplify the process.

The light emitting device of the embodiment includes a light emitting structure including a first semiconductor layer sequentially stacked, an active layer including europium, and a second semiconductor layer; A first electrode electrically connected to the first semiconductor layer; And a second electrode electrically connected to the second semiconductor layer.

A method of manufacturing a light emitting device according to an embodiment includes forming a light emitting structure in which a first semiconductor layer, an active layer including europium, and a second semiconductor layer are sequentially stacked on a substrate; Forming a first electrode electrically connected to the first semiconductor layer; And a second electrode electrically connected to the second semiconductor layer.

In another embodiment, a method of manufacturing a light emitting device includes forming a first semiconductor layer on a substrate including first, second, and third regions; Forming a first active layer including indium on the first semiconductor layer using a first mask exposing only the first region; Forming a second active layer including indium on the first semiconductor layer using a second mask exposing only the second region; Forming a third active layer including europium on the first semiconductor layer using a third mask exposing only the third region; And a second semiconductor layer is formed on the first semiconductor layer and the first, second and third active layers to form a first semiconductor layer, a first active layer, a second active layer, Forming a light emitting structure; Forming a first, a second, and a third light emitting structure in the first, second, and third regions, respectively, by separating the light emitting structure; Forming a first electrode connected to each of the first semiconductor layers of the first, second, and third light emitting structures, respectively; And forming a second electrode connected to each of the second semiconductor layers of the first, second, and third light emitting structures, respectively.

According to the embodiment, the light emitting device and the manufacturing method thereof according to the embodiment of the present invention can reduce manufacturing cost and simplify the manufacturing process by forming light emitting diodes emitting red, green and blue light from the same substrate.

1A, 1B, and 1C are sectional views of a light emitting device of the present invention.
2A to 2G are cross-sectional views illustrating a method of manufacturing a light emitting device according to an embodiment of the present invention.
3A to 3K are cross-sectional views illustrating a method of manufacturing a light emitting device according to another embodiment of the present invention.

While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that the embodiments of the present invention are not intended to be limited to the specific embodiments but include all modifications, equivalents, and alternatives falling within the spirit and scope of the embodiments.

Terms including ordinals, such as first, second, etc., may be used to describe various elements, but the elements are not limited to these terms. The terms are used for the purpose of distinguishing one component from another. For example, without departing from the scope of the embodiments, the second component may be referred to as a first component, and similarly, the first component may also be referred to as a second component. And / or < / RTI > includes any combination of a plurality of related listed items or any of a plurality of related listed items.

It is to be understood that when an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, . On the other hand, when an element is referred to as being "directly connected" or "directly connected" to another element, it should be understood that there are no other elements in between.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the embodiments of the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprises" or "having" and the like are used to specify that there is a feature, a number, a step, an operation, an element, a component or a combination thereof described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

In the description of the embodiments, in the case where one element is described as being formed "on or under" another element, the upper (upper) or lower (lower) or under are all such that two elements are in direct contact with each other or one or more other elements are indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings, wherein like or corresponding elements are denoted by the same reference numerals, and redundant description thereof will be omitted.

Hereinafter, the light emitting device of the embodiment will be described in detail with reference to the accompanying drawings.

1A is a cross-sectional view of a light emitting device of the present invention.

1A, the light emitting device 220 of the present invention includes a substrate 100, a first semiconductor layer 110a formed on the substrate 100, an active layer 120a, and a second semiconductor layer 130a. And includes a structure 210a, a first electrode 140a connected to the first semiconductor layer 110a, and a second electrode 160a electrically connected to the second semiconductor layer 130a. In this case, the active layer 120a includes a compound semiconductor doped with europium (Eu).

The substrate 100 may be formed of a material selected from sapphire (Al ₂ O ₃ ), SiC, GaN, ZnO, Si, GaP, InP and Ge. The substrate 100 can be easily separated from the light emitting structure 210a for thinning the light emitting device 220. [

The first semiconductor layer 110a may be formed of a compound semiconductor such as group III-V, group II-VI, or the like, and the first dopant may be doped. A first semiconductor having a composition formula of the semiconductor layer (110a) is _{In x Al y Ga 1 -x- y} N (0≤x≤≤1, 0≤≤y≤≤1, 0≤≤x + y≤≤1) Or a material selected from AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. When the first dopant is an n-type dopant such as Si, Ge, Sn, Se, or Te, the first semiconductor layer 110a may be an n-type semiconductor layer.

The second semiconductor layer 130a may be formed of a compound semiconductor such as group III-V, group II-VI, or the like, and the second dopant may be doped. The second semiconductor layer 130a is a semiconductor having a composition formula of Al _x In _y Ga _(1-xy) N (0? _{X ? 1, 0? Y ? 1} , 0? X + y? Material, InAlGaN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, but is not limited thereto. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second semiconductor layer 130a may be a p-type semiconductor layer.

For example, the active layer 120a may be formed of a compound semiconductor such as GaN, InGaN, AlGaN, InAlGaN, and the like, and may be formed of a compound semiconductor such as Eu, Or a structure in which europium is doped in the same compound semiconductor material.

The europium doped in the active layer 120a is in an ion state. Electrons and holes injected from the first electrode 140a and the second electrode 160a are recombined in the active layer 120a to generate transition in the europium ions Eu3 ⁺ 670 nm) light can be emitted.

One end of the first electrode 140a contacts the first semiconductor layer 110a and the other end of the first electrode 140a extends to the upper surface of the substrate 100. [ Accordingly, when the light emitting structure 210a is separated from the substrate 100, the first electrode 140a may be exposed from the lower surface of the light emitting device 220. [

In order to display an image by arranging the light emitting element 220 for each pixel of the display device and driving the light emitting element 220, the light emitting element 220 must be electrically connected to the circuit pattern of the pixel. The substrate 100 of the light emitting device 220 is removed and the light emitting device 220 is disposed on the pixels of the display device so that the first electrode 140a exposed from the lower portion of the light emitting device 220 is electrically connected to the circuit pattern .

The insulating layer 150a may be disposed to surround the first electrode 140a and the light emitting structure 210a to expose a portion of the second semiconductor layer 130a. The insulating layer 150a prevents electrical connection between the first electrode 140a and the second electrode 160a. An insulating film (150a) as described above is at least one selected from the group consisting of _{SiO 2, Si x O y,} Si 3 N 4, Si x N y, SiO x N y, Al 2 O 3, TiO 2, AlN , etc. But is not limited thereto.

The second electrode 160a may be electrically connected to the second semiconductor layer 130a exposed by the insulating layer 150a. Although not shown, an ohmic layer may be further disposed between the second semiconductor layer 130a and the second electrode 160a. Current can be uniformly diffused from the second electrode 160a to the second semiconductor layer 130a through the ohmic layer.

The ohmic layer may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide ZnO, ZnO, IrOx, RuOx, NiO, Al2O3, Al2O3, Al2O3, Al2O3, ATO, GZO, IZON, IZO, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, Au, Hf / RuOx / ITO, Ni / IrOx / And it is not limited to such a material.

1B and 1C are cross-sectional views of a light emitting device according to an embodiment of the present invention that emits blue light and green light, respectively.

The light emitting device 230 that emits blue light in FIG. 1B and the light emitting device 240 that emits green light in FIG. 1C have the same components except for the light emitting device 220 and the active layer in FIG. Therefore, description of the remaining components except for the active layer is omitted.

1B, the active layer 120b of the light emitting device 230 that emits blue light may include indium (In) doped in a compound semiconductor material such as GaN, InGaN, AlGaN, and InAlGaN. 1C, the active layer 120c of the light emitting device 240 emitting green light may include indium (In) doped in a compound semiconductor material such as GaN, InGaN, AlGaN, InAlGaN, and the like. At this time, the active layer 120b of the light emitting device 230 emitting blue light and the active layer 120c of the light emitting device 240 emitting green light have different doping densities of indium.

The light emitting element 240 including the active layer 120c having a high indium content emits green (490 nm to 560 nm) light, and the indium The light emitting device 230 including the active layer 120b having a low content may emit blue light (440 nm to 480 nm). The indium concentration to be doped in the active layer is easily adjustable, and the color purity of blue and green can be controlled by adjusting the concentration of indium.

As described above, the conventional light emitting device emitting red light is formed on a substrate containing gallium arsenide (GaAs). The active layer of the light emitting device emitting red light is made of a material such as GaP and the light emitting device emitting green light or blue light is doped with indium (In) to a compound semiconductor material such as GaN, InGaN, AlGaN, InAlGaN, . Therefore, the light emitting element that emits red light and the light emitting element that emits blue light and green light can not be formed on the same substrate through the same process. Moreover, since the driving voltage and the current condition of each light emitting element are different, the reliability of the light emitting element that emits different light is different from each other, and the manufacturing cost is increased and the process is complicated.

On the other hand, the present invention can be formed on a substrate 100 including sapphire, such as the light emitting devices 220 and 230 emitting blue light and green light, respectively. The active layers 120a, 120b and 120c of the light emitting devices 220, 230 and 240 emitting red, blue and green light are doped with europium (Eu) or indium (In) Therefore, the present invention can form the light emitting devices 220, 230, and 240 emitting blue and green light in the same process. Accordingly, the present invention has the same current injection conditions for driving the light emitting devices 22, 230, and 240, and can reduce manufacturing cost and simplify the process.

Furthermore, since the substrate including the conventional gallium arsenide (GaAs) is opaque, a separate technique for separating the substrate is required. However, the substrate 100 including sapphire is light-transmissive and has a laser lift off (LLO) Can be easily separated by using a method. Accordingly, the light emitting devices 220, 230, and 240 of the present invention can be separated on the substrate 100 by a laser lift off (LLO) method, and can be disposed in each pixel of the display device.

Hereinafter, a method for manufacturing a light emitting device according to an embodiment of the present invention will be described in detail.

FIGS. 2A to 2G are cross-sectional views illustrating a method of manufacturing a light emitting device according to an embodiment of the present invention, and show a method of manufacturing a light emitting device that emits red light.

2A, a light emitting structure 130 is formed on a substrate 100. Referring to FIG. The substrate 100 may be formed of a material selected from sapphire (Al ₂ O ₃ ), SiC, GaN, ZnO, Si, GaP, InP and Ge. The light emitting structure 210 may include a plurality of compound semiconductor layers and the light emitting structure 210 may include a first semiconductor layer 110a, an active layer 120a, and a second semiconductor layer 130a on the substrate 100 And then growing them in order.

The light emitting structure 210 may be formed using a material such as a molecular beam epitaxy (MBE), a physical vapor deposition (PVD), a chemical vapor deposition (CVD), a plasma laser deposition (PLD) sputtering, metal organic chemical vapor deposition, or the like.

The first semiconductor layer 110a may be formed of a compound semiconductor such as group III-V, group II-VI, or the like, and the first dopant may be doped. A first semiconductor having a composition formula of the semiconductor layer (110a) is _{In x Al y Ga 1 -x- y} N (0≤x≤≤1, 0≤≤y≤≤1, 0≤≤x + y≤≤1) Or a material selected from AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. When the first dopant is an n-type dopant such as Si, Ge, Sn, Se, or Te, the first semiconductor layer 110a may be an n-type semiconductor layer.

The active layer 120a is provided between the first semiconductor layer 110a and the second semiconductor layer 130a. The active layer 120a is a layer where electrons (or holes) injected through the first semiconductor layer 110a and holes (or electrons) injected through the second semiconductor layer 130a meet. The active layer 120a may transition to a low energy level as electrons and holes recombine, and may generate light having a wavelength corresponding thereto.

The active layer 120a may be formed of a compound semiconductor of a group III-V or II-VI group doped with a second dopant, and the second dopant may be a compound semiconductor of europium (Eu) . The europium doped in the active layer 130b is in an ion state, and transition occurs in the europium ion (Eu ^{3 +} ) to emit red light (590 nm to 670 nm).

Although not shown, the active layer of the light emitting device emitting blue light or green light is doped with indium (In) in the active layer, and the active layer of the light emitting device emitting blue light and the active layer of the light emitting device emitting green light have a doping concentration of indium It is different.

The second semiconductor layer 130a may be formed of a compound semiconductor such as group III-V, group II-VI, or the like, and the second dopant may be doped. The second semiconductor layer 130a is a semiconductor having a composition formula of Al _x In _y Ga _(1-xy) N (0? _{X ? 1, 0? Y ? 1} , 0? X + y? Material, InAlGaN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, but is not limited thereto. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second semiconductor layer 130a may be a p-type semiconductor layer.

2B, the light emitting structure 210 is mesa-etched to remove a portion of the first semiconductor layer 110a, the active layer 120a, and the second semiconductor layer 130a. The first semiconductor layer 110a may be exposed by mesa etching. Then, as shown in FIG. 2C, isolation etching is performed to separate the adjacent light emitting structures. The substrate 100 between the adjacent light emitting structures can be exposed through the isolation etching.

The first electrode 140a which is electrically connected to the exposed first semiconductor layer 110a by partially removing the first semiconductor layer 110a, the active layer 120a and the second semiconductor layer 130a, . One end of the first electrode 140a may be directly connected to the first semiconductor layer 110a and the other end may extend to an upper surface of the substrate 100. [ The first electrode 140a may be formed of a transparent conductive oxide (TCO) or an opaque metal, or may be formed of one or a plurality of layers of a transparent conductive oxide film and an opaque metal.

2E, an insulating layer 150a is formed on the light emitting structure 210a and the substrate 100 to expose a part of the second semiconductor layer 130a. The insulating film 150a may be formed of at least one selected from the group consisting of SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , But is not limited thereto. The insulating layer 150a may insulate the second electrode 160a from the first electrode 140a and the insulating layer 150a may be formed to completely surround the first electrode 140a.

Then, as shown in FIG. 2F, the second electrode 160a is formed on the second semiconductor layer 130a exposed by the insulating film 150a. The second electrode 160a is electrically connected to the second semiconductor layer 130a.

Although not shown, an ohmic layer may be further formed between the second semiconductor layer 130a and the second electrode 160a. The ohmic layer may be formed on the light emitting structure 210 after the light emitting structure 210 is formed and may be separated into a plurality of light emitting structures 210 when the light emitting structure 210 is mesa etched, You may.

2G, the light emitting structure can be separated from the substrate 100 using a laser lift off (LLO) method or the like. Particularly, the light emitting device can be formed in a very small size of several tens of micro (micro) size, and the light emitting device 220 in which the substrate 100 is removed as described above can be disposed in each pixel of the display device to display an image.

Although the method of manufacturing the light emitting device 220 emitting red light has been described above, the light emitting devices 230 and 240 emitting blue and green light may be formed on the substrate 100 in the same manner. In this case, the light emitting devices 220, 230, and 240 may be formed by modifying only the material forming the active layer 120a.

In addition, all the light emitting devices 220, 230, and 240 emitting blue, green, and red light may be formed on one substrate 100.

3A to 3K are cross-sectional views illustrating a method of manufacturing a light emitting device according to another embodiment of the present invention.

The first semiconductor layer 110 is formed on the entire surface of the substrate 100 including the first, second, and third regions A, B, and C, as shown in FIG. The first semiconductor layer 110 may be formed of a compound semiconductor such as Group III-V, Group II-VI, or the like, and the first dopant may be doped.

The first semiconductor layer 110 may be formed using a material such as a molecular beam epitaxy (MBE), a physical vapor deposition (PVD), a chemical vapor deposition (CVD), a plasma laser deposition (PLD) , Sputtering, metal organic chemical vapor deposition, or the like.

3B, a first active layer 120a is formed in the first region A by using a first mask 300a exposing only the first semiconductor layer 110 corresponding to the first region A, do. For example, in order for the light emitting device including the first active layer 120a to emit red light, the first active layer 120a may be formed of a compound semiconductor of III-V group or II-VI group including europium have.

3C, a second active layer 120b is formed in the second region B by using a second mask 300b exposing only the first semiconductor layer 110 corresponding to the second region B, do. For example, in order for the light emitting device including the second active layer 120b to emit blue light, the second active layer 120b may be formed of a compound semiconductor of III-V group or II-VI group including indium have.

3D, a third active layer 120c is formed in the third region C by using a third mask 300c exposing only the first semiconductor layer 110 corresponding to the third region C, do. For example, in order for the light emitting device including the third active layer 120c to emit green light, the third active layer 120c may be formed of a compound semiconductor of III-V group or II-VI group including indium have. At this time, a higher concentration of indium (In) may be doped in the third active layer 120c than in the second active layer 120b.

In another embodiment of the present invention, the first, second and third active layers 120a, 120b and 120c of different materials are formed on the first semiconductor layer 110 by using masks 300a, 300b and 300c, .

Next, as shown in FIG. 3E, the second semiconductor layer 130 is formed on the first, second, and third active layers 120a, 120b, and 120c. The second semiconductor layer 130 may be formed of a compound semiconductor such as group III-V, group II-VI, or the like, and the second dopant may be doped. The second semiconductor layer 130 may be integrally formed on the entire surface of the first, second, and third regions A, B, and C, respectively.

The light emitting structure 140 is mesa-etched to form the first semiconductor layer 110, the first, second and third active layers 120a, 120b and 120c and the second semiconductor layer 130 ). The first semiconductor layer 110 may be exposed by mesa etching. As shown in FIG. 3G, the isolation structure 140 is separated by performing isolation etching, and the separated first, second, and third light emitting structures 210a, 210b, and 210c are formed in different active layers 120a , 120b, and 120c. The substrate 100 may be exposed in a region where the first, second, and third light emitting structures 210a, 210b, and 210c are separated from each other.

Referring to FIG. 3H, a first electrode 140 electrically connected to the first semiconductor layer 110 is formed. The first electrode 140 surrounds the sides of the first, second, and third light emitting structures 210a, 210b, and 210c. Specifically, one end of the first electrode 140 is connected to the first semiconductor layer 110 and the other end may extend to the upper surface of the substrate 100. [

Next, as shown in FIG. 3I, an insulating film 150 is formed to expose a part of the second semiconductor layer 130. The insulating film 150 may be formed of at least one selected from the group consisting of SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , But is not limited thereto. The insulating layer 150 may insulate the second electrode 160 and the first electrode 140 from each other and the insulating layer 150 may be formed to completely surround the first electrode 140. However,

3J, the second electrode 160 is formed on the second semiconductor layer 130 exposed by the insulating film 150. [0050] Next, as shown in FIG. The second electrode 160 is electrically connected to the second semiconductor layer 130.

As shown in FIG. 3K, the desired light emitting devices 220, 230, and 240 can be selectively separated from the substrate 100 using a laser lift off (LLO) method or the like.

As described above, another embodiment of the present invention can form light emitting devices 220, 230, and 240 that emit different lights on one substrate 100 using masks 300a, 300b, and 300c. have. In this case, the manufacturing cost can be reduced.

 The light emitting devices 220, 230, and 240 of the present invention are formed in a micro size (50 μm × 50 μm or less) smaller than the pixel size of the display device so that the data line and the gate line of the display device intersect with each other For each pixel. In this case, the light emitting devices 220, 230, and 240 are not the liquid crystal cells of the display device or the backlight unit disposed on the back surface of the organic light emitting cell, but the first electrodes 140a, 140b, and 140c are connected to the data lines And the second electrodes 160a, 160b, and 160c are connected to the common electrode, and can be directly driven by the driving unit of the display device.

Therefore, the display device including the light-emitting device of the present invention can display an image through red, green, and blue light, respectively, generated in the light-emitting device without a color filter.

It will be apparent to those skilled in the art that various changes, substitutions, and alterations can be made hereto without departing from the spirit and scope of the invention as defined in the appended claims. Will be apparent to those of ordinary skill in the art.

100: substrate 110, 110a, 110b, 110c: first semiconductor layer
120a, 120b, 120c: active layer 130, 130a, 130b, 130c:
140a, 140b, 140c: first electrodes 150a, 150b, 150c:
160a, 150b, 160c: second electrode 140, 210, 210a, 210b, 210c:
220, 230, 240: light emitting element 300a, 300b, 300c: mask

Claims (14)

A light emitting structure including a first semiconductor layer sequentially stacked, an active layer including europium, and a second semiconductor layer;
A first electrode electrically connected to the first semiconductor layer; And
And a second electrode electrically connected to the second semiconductor layer. The method according to claim 1,
And a substrate disposed under the light emitting structure,
Wherein the first electrode has one end connected to the first semiconductor layer and the other end extends to an upper surface of the substrate. 3. The method of claim 2,
Wherein the substrate comprises sapphire. Forming a light emitting structure in which a first semiconductor layer, an active layer including europium, and a second semiconductor layer are sequentially stacked on a substrate;
Forming a first electrode electrically connected to the first semiconductor layer; And
And forming a second electrode electrically connected to the second semiconductor layer. 5. The method of claim 4,
Wherein the substrate comprises sapphire. 5. The method of claim 4,
Wherein the first electrode has one end connected to the first semiconductor layer and the other end extends to an upper surface of the substrate. 5. The method of claim 4,
And separating the light emitting structure and the substrate. 8. The method of claim 7,
And separating the light emitting structure and the substrate by a laser lift-off method. Forming a first semiconductor layer on a substrate comprising first, second and third regions;
Forming a first active layer including indium on the first semiconductor layer using a first mask exposing only the first region;
Forming a second active layer including indium on the first semiconductor layer using a second mask exposing only the second region;
Forming a third active layer including europium on the first semiconductor layer using a third mask exposing only the third region;
And a second semiconductor layer is formed on the first semiconductor layer and the first, second and third active layers to form a first semiconductor layer, a first active layer, a second active layer, Forming a light emitting structure;
Forming a first, a second, and a third light emitting structure in the first, second, and third regions, respectively, by separating the light emitting structure;
Forming a first electrode connected to each of the first semiconductor layers of the first, second, and third light emitting structures, respectively; And
And forming a second electrode connected to each of the second semiconductor layers of the first, second, and third light emitting structures. 10. The method of claim 9,
Wherein a content of indium contained in the first active layer is different from a content of indium contained in the second active layer. 10. The method of claim 9,
Wherein the substrate comprises sapphire. 10. The method of claim 9,
Wherein the first electrode has one end connected to the first semiconductor layer and the other end extends to an upper surface of the substrate. 10. The method of claim 9,
And separating the first, second, and third light emitting structures from the substrate. 14. The method of claim 13,
And separating the light emitting structure and the substrate by a laser lift-off method.

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