CN110957404A - High-voltage LED chip and manufacturing method thereof - Google Patents

High-voltage LED chip and manufacturing method thereof Download PDF

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Publication number
CN110957404A
CN110957404A CN201911302780.4A CN201911302780A CN110957404A CN 110957404 A CN110957404 A CN 110957404A CN 201911302780 A CN201911302780 A CN 201911302780A CN 110957404 A CN110957404 A CN 110957404A
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China
Prior art keywords
layer
electrode
bridging
thickness
substrate
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CN201911302780.4A
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Chinese (zh)
Inventor
仇美懿
庄家铭
徐亮
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Foshan Nationstar Semiconductor Co Ltd
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Foshan Nationstar Semiconductor Co Ltd
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Priority to CN201911302780.4A priority Critical patent/CN110957404A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer

Abstract

The invention discloses a high-voltage LED chip and a manufacturing method thereof, wherein the chip comprises a substrate, a plurality of light-emitting structures arranged on the front surface of the substrate, N electrodes and P electrodes arranged on the light-emitting structures, connecting electrodes and a bridging strengthening layer; the bridging strengthening layer comprises a Cr layer, a Ti layer, a Pt layer and an Au layer, wherein the Cr layer is arranged between the connecting electrode and the Ti layer, and the Pt layer is arranged between the Ti layer and the Au layer; the connecting electrode is used for forming conductive connection between the N electrode and the P electrode of two adjacent light-emitting structures, and the bridging strengthening layer is arranged on the connecting electrode so as to strengthen the connecting electrode and shunt current passing through the connecting electrode. According to the invention, the bridging strengthening layer is arranged on the connecting electrode, so that the current only flowing through the connecting electrode can be shunted to the bridging strengthening layer, the impact of pulse current on the bridging part of the connecting electrode is reduced, and the capability of resisting the pulse current impact of a chip is improved.

Description

High-voltage LED chip and manufacturing method thereof
Technical Field
The invention relates to the technical field of light emitting diodes, in particular to a high-voltage LED chip and a manufacturing method thereof.
Background
The existing high-voltage LED chip is mainly used for bulb lamps and ceiling lamps, and is a very common LED chip for household illumination. The household circuit often has the problem of current surge, which easily causes the burning of the high-voltage LED chip.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a conventional high-voltage LED chip, and includes a substrate 10, a plurality of light emitting structures 20 disposed on the substrate 10, and N electrodes 31 and P electrodes 32 disposed on the light emitting structures 20, where the N electrodes 31 and the P electrodes 32 between two adjacent light emitting structures form a bridge through a connection electrode 33, and a bridge 34 is relatively weak, so that a crack is easily generated at the bridge above the chip.
Disclosure of Invention
The present invention provides a high voltage LED chip and a method for manufacturing the same, wherein a bridging strengthening layer is disposed on a connection electrode to strengthen the connection electrode.
The present invention also solves the technical problem of providing a bridging reinforcement layer on a connection electrode to shunt current passing through the connection electrode.
In order to solve the technical problem, the invention provides a high-voltage LED chip, which comprises a substrate, a plurality of light-emitting structures arranged on the front surface of the substrate, an N electrode, a P electrode, a connecting electrode and a bridging strengthening layer, wherein the N electrode is arranged on the front surface of the substrate;
the N electrode and the P electrode are arranged on the light-emitting structures, the N electrodes and the P electrodes of two adjacent light-emitting structures are in conductive connection through the connecting electrodes, and the bridging strengthening layer is arranged on the connecting electrodes to strengthen the connecting electrodes and shunt current passing through the connecting electrodes;
the bridging strengthening layer comprises a Cr layer, a Ti layer, a Pt layer and an Au layer, wherein the Cr layer is arranged between the connecting electrode and the Ti layer, and the Pt layer is arranged between the Ti layer and the Au layer.
As an improvement of the scheme, the thickness of the Cr layer is 20-50 angstroms, the thickness of the Ti layer is 500-2000 angstroms, the thickness of the Pt layer is 500-2000 angstroms, and the thickness of the Au layer is 5000-30000 angstroms.
As an improvement of the scheme, the thickness of the Cr layer is 25-40 angstroms, the thickness of the Ti layer is 800-1500 angstroms, the thickness of the Pt layer is 500-1000 angstroms, and the thickness of the Au layer is 5000-20000 angstroms.
As an improvement of the above scheme, the light emitting structure includes an epitaxial layer and a transparent conductive layer, the epitaxial layer includes a first semiconductor layer, an active layer and a second semiconductor layer sequentially disposed on the substrate, the transparent conductive layer is disposed on the second semiconductor layer, the N electrode is disposed on the first semiconductor layer, and the P electrode is disposed on the transparent conductive layer.
As an improvement of the scheme, an isolation groove is arranged between the light-emitting structures, and insulating layers are arranged on the light-emitting structures and the isolation groove;
the connection electrode is arranged on the insulating layer and comprises a bridging portion and a connection portion, the bridging portion is located on the isolation groove, the connection portion is connected with the bridging portion, and the bridging strengthening layer is arranged on the bridging portion.
As an improvement of the above scheme, the chip further comprises an anti-stress layer arranged on the back surface of the substrate, wherein the anti-stress layer is used for preventing the chip from warping due to high temperature;
the stress resistant layer is made of one or more of AlN, AlGaN and GaN.
As an improvement of the above aspect, the stress resistance layer includes a GaN layer, an AlGaN layer, and an AlN layer, the GaN layer being disposed between the substrate and the AlGaN layer, and the AlN layer being disposed on the AlGaN layer.
As an improvement of the scheme, the thickness of the stress resistance layer is 1.0-1.2 times of that of the epitaxial layer.
Correspondingly, the invention also provides a manufacturing method of the high-voltage LED chip, which comprises the following steps:
forming a plurality of light-emitting structures on the front surface of the substrate;
forming an N electrode and a P electrode on the light emitting structure;
forming a connecting electrode, wherein the connecting electrode is used for electrically connecting the N electrode and the P electrode of two adjacent light-emitting structures;
and forming a bridging strengthening layer on the connecting electrode, wherein the bridging strengthening layer comprises a Cr layer, a Ti layer, a Pt layer and an Au layer, the Cr layer is arranged between the connecting electrode and the Ti layer, and the Pt layer is arranged between the Ti layer and the Au layer.
As an improvement of the scheme, an anti-stress layer is formed on the back surface of the substrate, and the anti-stress layer is made of one or more of AlN, AlGaN and GaN.
The implementation of the invention has the following beneficial effects:
according to the invention, the bridging strengthening layer is arranged on the connecting electrode, so that the current only flowing through the connecting electrode can be shunted to the bridging strengthening layer, the impact of pulse current on the bridging part of the connecting electrode is reduced, and the capability of resisting the pulse current impact of a chip is improved.
According to the invention, the stress-resistant layer is arranged on the back surface of the substrate, and because the constituent elements of the stress-resistant layer and the constituent elements of the epitaxial layer are the same elements, namely the structure of the same elements is arranged on the two sides of the substrate, the stress on the two sides of the substrate can be balanced, and the substrate is prevented from warping under the high-temperature condition.
Drawings
FIG. 1 is a schematic structural diagram of a conventional high-voltage LED chip;
FIG. 2 is a schematic diagram of a high voltage LED chip according to the present invention;
FIG. 3 is a top view of a high voltage LED chip of the present invention;
FIG. 4 is a schematic structural view of a bridging strengthening layer of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings.
Referring to fig. 2 and 3, the high voltage LED chip provided by the present invention includes a substrate 10, a plurality of light emitting structures 20 disposed on a front surface of the substrate 10, an N electrode 31, a P electrode 32, a connection electrode 33, and a bridging strengthening layer 40.
The substrate 10 of the present invention is preferably a sapphire substrate, and the light emitting structure 20 of the present invention includes an epitaxial layer including a first semiconductor layer 21, a second semiconductor layer 22, and a second semiconductor layer 23 sequentially disposed on the substrate 10, and a transparent conductive layer 24. Preferably, the material of the epitaxial layer of the present invention is preferably a gallium nitride material.
The substrate of the invention can also be selected from materials such as silicon, silicon carbide and the like, and the epitaxial layer can also be selected from materials such as gallium arsenide and the like.
It should be noted that, the light emitting structures 20 of the present invention are disposed with the isolation grooves 25 therebetween, and the isolation grooves 25 separate the light emitting structures 20.
In order to protect the light emitting structure 20 and prevent the chip from short circuit, the chip of the present invention further includes an insulating layer 60, and the insulating layer 60 covers the light emitting structure 20. Further, the insulating layer 60 extends along the light emitting structure 20 to cover the isolation trench 25.
The N electrode 31 is disposed on the first semiconductor 21, and the P electrode 32 is disposed on the transparent conductive layer 24.
The connection electrode 33 of the present invention electrically conductively connects the N-electrode 31 and the P-electrode 32 of the adjacent two light emitting structures 20 and electrically connects all the light emitting structures 20 in series.
The connection electrode 33 of the present invention is provided on the insulating layer 60, the connection electrode 33 includes a bridge portion and a connection portion, the bridge portion is located on the isolation groove 25, the connection portion is connected to the bridge portion, and the bridge reinforcing layer 40 is provided on the bridge portion.
According to the invention, the bridging strengthening layer is arranged on the connecting electrode, so that the current only flowing through the connecting electrode can be shunted to the bridging strengthening layer, the impact of pulse current on the bridging part of the connecting electrode is reduced, and the capability of resisting the pulse current impact of a chip is improved.
In order to further improve the effect of the bridge reinforcing layer, the area of the bridge reinforcing layer is equal to or larger than the area of the bridge portion. Preferably, the side length of the bridging strengthening layer is 3-5 μm larger than that of the bridging part, so that the shunting effect is optimal.
Referring to fig. 4, the bridge strengthening layer 40 includes a Cr layer 41, a Ti layer 42, a Pt layer 43, and an Au layer 44, the Cr layer 41 being disposed between the connection electrode 33 and the Ti layer 42, the Pt layer 43 being disposed between the Ti layer 42 and the Au layer 44.
The Cr layer serves as an adhesion layer for adhering the bridge reinforcing layer to the connection electrode, and if the thickness of Cr is too large, the Cr layer is likely to be broken. The Ti layer and the Pt layer are used as a barrier layer to prevent the metal of the bridging strengthening layer from diffusing mutually to cause a cavity, so that the aging is poor, if the thickness of the Ti layer is too thick, the voltage of the chip can be increased, and if the thickness of the Ti layer and the Pt layer is too thin, the effect cannot be achieved.
The bridging strengthening layer not only shunts the current of the connecting electrode to the bridging strengthening layer, but also ensures that the bridging strengthening layer is not easy to separate from the connecting electrode and does not influence the light-emitting efficiency of the chip by the mutual matching of the Cr layer, the Ti layer, the Pt layer and the Au layer.
Preferably, the thickness of the Cr layer is 20-50 angstroms, the thickness of the Ti layer is 500-2000 angstroms, the thickness of the Pt layer is 500-2000 angstroms, and the thickness of the Au layer is 5000-30000 angstroms.
Preferably, the thickness of the Cr layer is 25-40 angstroms, the thickness of the Ti layer is 800-1500 angstroms, the thickness of the Pt layer is 500-1000 angstroms, and the thickness of the Au layer is 5000-20000 angstroms.
Because the chip of the invention is higher than the LED chip, the chip works under the condition of large current, the area of the substrate is larger than that of the conventional chip, and the substrate is easy to generate warping deformation under the condition of high-temperature stress when the chip works. The stress resistant layer 50 is arranged on the back surface of the substrate 10 and used for preventing the chip from warping due to high temperature.
The stress resistance layer 50 of the present invention is made of one or more of AlN, AlGaN, and GaN. The material has the same type of element as that of the light-emitting structure.
According to the invention, the stress-resistant layer and the epitaxial layer are arranged on two sides of the substrate, and the stress on two sides of the substrate can be balanced and the substrate can be prevented from warping under a high-temperature condition because the structures of the same type of elements are arranged on two sides of the substrate. The stress resistance layer 50 of the present invention has a single-layer structure or a multi-layer structure.
Preferably, the stress resistance layer 50 is a single-layer structure and made of GaN.
Preferably, the stress resistance layer 50 is a multilayer structure, and includes a GaN layer, an AlGaN layer, and an AlN layer, where the GaN layer is disposed between the substrate and the AlGaN layer, and the AlN layer is disposed on the AlGaN layer.
Further, the thickness of the stress resistance layer 50 is similar to that of the epitaxial layer, and specifically, the thickness of the stress resistance layer is 1.0-1.2 times of that of the epitaxial layer. Specifically, the thickness of the stress resistance layer is greater than or equal to 5 μm.
Correspondingly, the invention also provides a manufacturing method of the high-voltage LED chip, which comprises the following steps:
firstly, forming a plurality of light-emitting structures on the front surface of a substrate;
specifically, an epitaxial layer is formed on the front surface of a substrate, and the epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially arranged on the substrate; etching the epitaxial layer to the front side of the substrate to form an isolation groove; etching the epitaxial layer until the first semiconductor layer is etched to form an exposed area; a transparent conductive layer is formed on the second semiconductor layer.
The substrate is preferably a sapphire substrate, the light-emitting structure comprises an epitaxial layer and a transparent conducting layer, and the epitaxial layer comprises a first semiconductor layer, a second semiconductor layer and a second semiconductor layer which are sequentially arranged on the substrate. Preferably, the material of the epitaxial layer of the present invention is preferably a gallium nitride material.
The substrate of the invention can also be selected from materials such as silicon, silicon carbide and the like, and the epitaxial layer can also be selected from materials such as gallium arsenide and the like.
Forming an N electrode and a P electrode on the light-emitting structure;
specifically, an N electrode is formed on the first semiconductor layer in the exposed region, and a P electrode is formed on the transparent conductive layer.
Further, an insulating layer is formed on the light emitting structure and the isolation groove. The insulating layer is made of an insulating material.
Thirdly, forming a connecting electrode;
specifically, a connecting electrode is formed on the insulating layer, and the connecting electrode is used for electrically connecting the N electrode and the P electrode of two adjacent light-emitting structures.
The connecting electrode comprises a bridging part and a connecting part, the bridging part is positioned on the isolation groove, and the connecting part is connected with the bridging part.
Fourthly, forming a bridging strengthening layer on the connecting electrode;
the bridging strengthening layer comprises a Cr layer, a Ti layer, a Pt layer and an Au layer, wherein the Cr layer is arranged between the connecting electrode and the Ti layer, and the Pt layer is arranged between the Ti layer and the Au layer.
The Cr layer serves as an adhesion layer for adhering the bridge reinforcing layer to the connection electrode, and if the thickness of Cr is too large, the Cr layer is likely to be broken. The Ti layer and the Pt layer are used as a barrier layer to prevent the metal of the bridging strengthening layer from diffusing mutually to cause a cavity, so that the aging is poor, if the thickness of the Ti layer is too thick, the voltage of the chip can be increased, and if the thickness of the Ti layer and the Pt layer is too thin, the effect cannot be achieved.
Preferably, the thickness of the Cr layer is 20-50 angstroms, the thickness of the Ti layer is 500-2000 angstroms, the thickness of the Pt layer is 500-2000 angstroms, and the thickness of the Au layer is 5000-30000 angstroms.
Preferably, the thickness of the Cr layer is 25-40 angstroms, the thickness of the Ti layer is 800-1500 angstroms, the thickness of the Pt layer is 500-1000 angstroms, and the thickness of the Au layer is 5000-20000 angstroms.
In order to further improve the effect of the bridge reinforcing layer, the area of the bridge reinforcing layer is equal to or larger than the area of the bridge portion. Preferably, the side length of the bridging strengthening layer is 3-5 μm larger than that of the bridging part, so that the shunting effect is optimal.
Fifthly, forming an anti-stress layer on the back surface of the substrate;
because the chip of the invention is higher than the LED chip, the chip works under the condition of large current, the area of the substrate is larger than that of the conventional chip, and the substrate is easy to generate warping deformation under the condition of high-temperature stress when the chip works. The stress-resistant layer is arranged on the back surface of the substrate and used for preventing the chip from warping due to high temperature.
The stress-resistant layer is made of one or more of AlN, AlGaN and GaN. The material has the same type of element as that of the light-emitting structure.
According to the invention, the stress-resistant layer and the epitaxial layer are arranged on two sides of the substrate, and the stress on two sides of the substrate can be balanced and the substrate can be prevented from warping under a high-temperature condition because the structures of the same type of elements are arranged on two sides of the substrate. The stress resistant layer of the invention is a single-layer structure or a multi-layer structure.
Preferably, the stress resistance layer is of a single-layer structure and is made of GaN.
Preferably, the stress resistance layer is of a multilayer structure and comprises a GaN layer, an AlGaN layer and an AlN layer, the GaN layer is arranged between the substrate and the AlGaN layer, and the AlN layer is arranged on the AlGaN layer.
Further, the thickness of the stress resistance layer is similar to that of the epitaxial layer, and specifically, the thickness of the stress resistance layer is 1.0-1.2 times of that of the epitaxial layer. Specifically, the thickness of the stress resistance layer is greater than or equal to 5 μm.
While the invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not to be limited to the disclosed embodiment, but on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

Claims (10)

1. A high-voltage LED chip is characterized by comprising a substrate, a plurality of light-emitting structures arranged on the front surface of the substrate, an N electrode, a P electrode, a connecting electrode and a bridging strengthening layer;
the N electrode and the P electrode are arranged on the light-emitting structures, the N electrodes and the P electrodes of two adjacent light-emitting structures are in conductive connection through the connecting electrodes, and the bridging strengthening layer is arranged on the connecting electrodes to strengthen the connecting electrodes and shunt current passing through the connecting electrodes;
the bridging strengthening layer comprises a Cr layer, a Ti layer, a Pt layer and an Au layer, wherein the Cr layer is arranged between the connecting electrode and the Ti layer, and the Pt layer is arranged between the Ti layer and the Au layer.
2. The high voltage LED chip of claim 1, wherein the Cr layer has a thickness of 20-50 angstroms, the Ti layer has a thickness of 500-2000 angstroms, the Pt layer has a thickness of 500-2000 angstroms, and the Au layer has a thickness of 5000-30000 angstroms.
3. The high-voltage LED chip as recited in claim 2, wherein the Cr layer has a thickness of 25-40 angstroms, the Ti layer has a thickness of 800-1500 angstroms, the Pt layer has a thickness of 500-1000 angstroms, and the Au layer has a thickness of 5000-20000 angstroms.
4. The high voltage LED chip of claim 1, wherein said light emitting structure comprises an epitaxial layer and a transparent conductive layer, said epitaxial layer comprising a first semiconductor layer, an active layer and a second semiconductor layer sequentially disposed on a substrate, said transparent conductive layer disposed on the second semiconductor layer, said N electrode disposed on the first semiconductor layer, said P electrode disposed on the transparent conductive layer.
5. The high voltage LED chip of claim 1, wherein isolation trenches are disposed between the light emitting structures, and insulating layers are disposed on the light emitting structures and the isolation trenches;
the connection electrode is arranged on the insulating layer and comprises a bridging portion and a connection portion, the bridging portion is located on the isolation groove, the connection portion is connected with the bridging portion, and the bridging strengthening layer is arranged on the bridging portion.
6. The high voltage LED chip of claim 4, further comprising a stress resistant layer disposed on the backside of the substrate, wherein the stress resistant layer is configured to prevent the chip from warping due to high temperature;
the stress resistant layer is made of one or more of AlN, AlGaN and GaN.
7. The high voltage LED chip of claim 6, wherein said stress resistant layer comprises a GaN layer disposed between the substrate and the AlGaN layer, an AlGaN layer, and an AlN layer disposed on the AlGaN layer.
8. The high-voltage LED chip according to claim 6 or 7, wherein the thickness of the stress-resistant layer is 1.0-1.2 times the thickness of the epitaxial layer.
9. A manufacturing method of a high-voltage LED chip is characterized by comprising the following steps:
forming a plurality of light-emitting structures on the front surface of the substrate;
forming an N electrode and a P electrode on the light emitting structure;
forming a connecting electrode, wherein the connecting electrode is used for electrically connecting the N electrode and the P electrode of two adjacent light-emitting structures;
and forming a bridging strengthening layer on the connecting electrode, wherein the bridging strengthening layer comprises a Cr layer, a Ti layer, a Pt layer and an Au layer, the Cr layer is arranged between the connecting electrode and the Ti layer, and the Pt layer is arranged between the Ti layer and the Au layer.
10. The method for manufacturing the high-voltage LED chip according to claim 9, wherein an anti-stress layer is formed on the back surface of the substrate, and the anti-stress layer is made of one or more of AlN, AlGaN and GaN.
CN201911302780.4A 2019-12-17 2019-12-17 High-voltage LED chip and manufacturing method thereof Pending CN110957404A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
CN201911302780.4A CN110957404A (en) 2019-12-17 2019-12-17 High-voltage LED chip and manufacturing method thereof

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CN110957404A true CN110957404A (en) 2020-04-03

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111661815A (en) * 2020-06-04 2020-09-15 上海南麟集成电路有限公司 MEMS touch sensor and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111661815A (en) * 2020-06-04 2020-09-15 上海南麟集成电路有限公司 MEMS touch sensor and manufacturing method thereof
CN111661815B (en) * 2020-06-04 2021-01-19 上海南麟集成电路有限公司 MEMS touch sensor and manufacturing method thereof

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