TW201417339A - Flip-chip light emitting diode and application thereof - Google Patents

Abstract

A flip-chip light emitting diode is disclosed, which includes: a substrate, a semiconductor multilayer structure, first and second electrode, first and second diamond-like-carbon/conductive-material composite structures, and a passivation layer, wherein, the passivation layer with a stacked structure of a material of different refractive index, and first and second diamond-like-carbon/conductive-material can buffer thermal stress in the flip-chip light emitting diode. Therefore, the flip-chip light emitting diode can improve the whole photoelectric efficiency and avoid its characteristic decreased, so that improving its reliability and service life. A method of manufacturing the abovementioned flip-chip light emitting diode and application thereof is also disclosed.

Description

Flip-chip luminescent diode and its application

The present invention relates to a flip-chip light-emitting diode, a method of manufacturing the same, and a package structure on a wafer board using the same, in particular, a structure capable of achieving a coefficient of thermal expansion mismatch and an increase in output light rate. A crystalline light-emitting diode and a method of manufacturing the same, and a package structure on a wafer board using the same.

In 1962, Nick of General Electric Company. Nick Holonyak Jr. developed the first practical application of Light Emitting Diode (LED), and with the ever-increasing technology, various color LEDs should also be developed. . Under the premise of the pursuit of sustainable development by human beings today, the low power consumption of LEDs and the long-lasting illumination have gradually replaced the indicators used in daily life for lighting or various electrical equipment. Or use of light sources. What's more, the development of light-emitting diodes towards multi-color and high brightness has been applied to large outdoor display billboards or traffic signs.

Since the beginning of the 21st century, the electronic industry has flourished, and electronic products have become an indispensable part of life. Therefore, enterprises are mainly engaged in the development of electronic products with versatility and high-efficiency development. For a variety of electronic products. In particular, there are an increasing number of portable electronic products, and the volume and weight of electronic products are getting smaller and smaller. The volume of the road carrier board also becomes smaller. Therefore, the heat dissipation effect of the circuit carrier board becomes one of the problems worthy of attention.

In the case of a light-emitting diode wafer which is frequently used today, since the light-emitting luminance is high enough, it can be widely used in various electronic devices such as a display backlight, a small projector, and illumination. However, at present, nearly 80% of the input power of the LED is converted into thermal energy. If the carrier carrying the LED component cannot effectively dissipate heat, the temperature of the interface of the LED array is increased, in addition to affecting the luminous intensity. In addition, the heat may be accumulated in the LED chip to cause thermal expansion of the layers, which may cause damage to the structure and adversely affect the life of the product. In addition, the light excited by the LED is diffused by radiation. Not all light is scattered through the surface of the light-emitting diode, resulting in poor light output and the most effective light output rate.

According to the above, the applicant has disclosed that the stacked structure or the multi-layer structure composed of the diamond-like carbon and the conductive material can effectively improve the heat dissipation of the light-emitting diode in the patent applications of the Republic of China Patent Nos. 100146548, 100146551 and 101120872. Efficiency and mitigation or removal of the adverse effects of thermal expansion of the LED, but the relevant previous case does not disclose the optimized stack cooling efficiency. Therefore, in order to optimize the heat dissipation efficiency, the applicant has specifically studied the specific conductive materials and the diamond-like carbon after proper stacking to optimize the heat dissipation efficiency of the light-emitting diode.

The main object of the present invention is to provide a flip-chip type light-emitting diode which has a structural design for alleviating the difference in thermal expansion coefficient and increasing the output light rate, and can continuously dissipate heat during the operation of the light-emitting diode to generate heat. Even if some of the heat is not dissipated from the light-emitting diode to cause thermal expansion or deformation of the overall structure, the multi-layer composite structure of the diamond-like carbon/conductive material provided therein can alleviate the corresponding thermal stress, and the protection is not damaged, and can The output light rate is increased by concentrating the light beam by the insulating protective layer.

To achieve the above object, an aspect of the present invention provides a flip-chip light emitting diode comprising: a substrate having a first surface and a second surface opposite to the first surface; a semiconductor epitaxial multilayer composite The structure is disposed above the second surface of the substrate and includes a first semiconductor epitaxial layer, a second semiconductor epitaxial layer, and a blind via, wherein the first semiconductor epitaxial layer and the second semiconductor epitaxial layer Layers are stacked, and the blind holes penetrate through the second semiconductor epitaxial layer; a first electrode is disposed above the first semiconductor epitaxial layer of the semiconductor epitaxial multilayer composite structure; a first type of drilled carbon/conductive material a multilayer composite structure is filled in the blind via of the semiconductor epitaxial multilayer composite structure and overlying the first electrode, and electrically connected to the first semiconductor epitaxial layer of the semiconductor epitaxial multilayer composite structure; a second electrode over the second semiconductor epitaxial layer of the semiconductor epitaxial multilayer composite structure; and a second type of carbon/conductive material multilayer composite structure located on the semiconductor epitaxial multilayer The second engagement structure of the upper electrode, and the second semiconductor epitaxial layer epitaxial semiconductor multilayer composite structure of the electrical connection. In another aspect of the invention, the flip-chip light emitting diode further includes an insulating protective layer covering the semiconductor epitaxial multilayer composite junction Forming a sidewall of the first semiconductor epitaxial layer and a sidewall of the second semiconductor epitaxial layer, and an inner wall surface of the blind via to isolate the first diamond-like carbon/conductive material multilayer composite structure from the second semiconductor Contact between the epitaxial layers.

The above-mentioned flip-chip light-emitting diode of the present invention is electrically connected to the corresponding electrode of the N-type semiconductor epitaxial layer and the P-type semiconductor epitaxial layer in the semiconductor epitaxial multilayer composite structure, and is designed on the corresponding electrode thereof. Sputtered into a multi-layer composite structure of diamond-like carbon/conductive material. In other words, the corresponding N-type electrode disposed on the surface of the epitaxial layer of the N-type semiconductor can deposit a metal generally as an N-type electrode, deposit a diamond-like carbon, and selectively deposit a suitable conductive material layer and a diamond-like carbon layer. According to this, a multi-layer composite structure of a diamond-like carbon/conductive material is formed to serve as an N-type composite structure corresponding to the N-type electrode. Similarly, for the P-type semiconductor epitaxial layer, the metal generally used as the P-type electrode can be deposited first, and then the diamond-like carbon can be deposited, and the applicable conductive material layer and the diamond-like carbon layer can be selectively deposited repeatedly, thereby forming a diamond-like drill. A carbon/conductive material multilayer composite structure is used as a P-type composite structure corresponding to a P-type electrode.

The insulating protective layer is a stacked structure having different refractive index materials. When the light emitting diode is supplied with current, the electrons can be excited to form light, and the light is diffused toward the surface and the side surface of the light emitting diode. The light diffusing can be enhanced by reflecting the diffused side light to the light-emitting surface of the flip-chip light-emitting diode by an insulating protective layer.

The above-mentioned diamond-like carbon/conductive material multilayer composite structure can make the flip-chip light-emitting diode of the present invention have a buffering capacity for stress caused by a difference in thermal expansion coefficient. In other words, the above-mentioned diamond-like carbon/conductive material multilayer composite structure can accelerate heat dissipation during the operation of the light-emitting diode to generate heat. Loss, even if part of the heat is not lost in the self-luminous diode and accumulates to cause thermal expansion of the overall structure, the diamond-like carbon/conductive material multilayer composite structure can also buffer the corresponding thermal stress, and can protect the rest of the flip-chip light-emitting diode The components are not damaged.

In summary, the flip-chip light-emitting diode of the present invention can improve the overall output light rate and avoid the deterioration of the photoelectric characteristics of the component, thereby improving the reliability and the lifetime.

In the above flip-chip light-emitting diode of the present invention, the insulating protective layer is provided by stacking two or more different refractive index materials; wherein the different refractive index materials may be at least one selected from the group consisting of diamond-like carbon (DLC), a group consisting of titanium oxide (Ti _x O _y ), cerium oxide (SiO ₂ ), cerium nitride (SiN), gallium arsenide (GaAs), and aluminum arsenide (AlAs), wherein titanium oxide (Ti _{x )} O _y ) may be used, for example, titanium oxide (TiO), titanium dioxide (TiO ₂ ) or titanous oxide (Ti ₂ O ₃ ), etc.; in the present invention, different refractive index materials in the insulating protective layer may be periodically stacked in sequence It is provided with the characteristics of a Bragg Reflector (DBR), and the light emitted to the side of the light-emitting diode can be reflected by the insulating protective layer to the light-emitting surface of the flip-chip light-emitting diode, thereby improving the output. In addition, in the present invention, a metal protective layer may be further disposed on the outer side of the insulating protective layer, and the metal protective layer may be at least one selected from the group consisting of aluminum (Al), titanium (Ti), molybdenum (Mo), and nickel ( a group of Ni), silver (Ag), gold (Au), platinum (Pt), or an alloy thereof, and thus, by the metal The protective layer can further increase the reflectance of the light emitted from the light emitting diode to the side surface to the light emitting surface of the flip chip type light emitting diode, thereby further improving the output light rate.

Preferably, the second surface can be formed into a patterned surface by etching or development treatment, and the light-emitting diode can be effectively improved in light-emitting rate, and the polarization and the light field distribution can be controlled.

In addition, the first surface may be formed into a patterned surface or a roughened surface by etching or development treatment, and the light extraction rate of the light emitting diode may be effectively improved.

In the above flip-chip light-emitting diode of the present invention, the semiconductor epitaxial multilayer composite structure may further comprise an undoped semiconductor epitaxial layer, the undoped semiconductor epitaxial layer being sandwiched between the first semiconductor epitaxial layer Between the second surface of the substrate; therefore, the undoped semiconductor epitaxial layer acts as a buffer layer between the first semiconductor epitaxial layer and the substrate, avoiding the first semiconductor epitaxial layer and the The degree of lattice mismatch between the substrates is too large, and the epitaxial defect density is prevented from being excessively high when the first semiconductor epitaxial layer is grown, and the above-mentioned flip-chip light-emitting diode can be prevented from having electrostatic discharge and current leakage. The situation.

In the above flip-chip light-emitting diode of the present invention, the semiconductor epitaxial multilayer composite structure may selectively further comprise an active intermediate layer sandwiched between the first semiconductor epitaxial layer and the second semiconductor Lei Between the layers. In addition, the blind via hole is disposed in the flip-chip light emitting diode structure of the present invention, and the blind via penetrates through the active intermediate layer. In the present invention, the active intermediate layer may be a multiple quantum well layer for improving the efficiency of converting electrical energy into light energy in the light-emitting diode.

Preferably, the first semiconductor epitaxial layer, the first electrode, and the first diamond-like carbon/conductive material multilayer composite structure are N-type, the second semiconductor The epitaxial layer, the second electrode, and the second diamond-like carbon/conductive material multilayer composite structure are P-type.

The conductive material layer or the conductive material may be selected from the group consisting of indium tin oxide (ITO), aluminum zinc oxide (AZO), zinc oxide (ZnO), graphene, titanium. (Ti), aluminum (Al), chromium (Cr), nickel (Ni), platinum (Pt), molybdenum (Mo), tungsten (W), silver (Ag), platinum (Pt), and gold (Au) At least one of the group groups. In other words, the conductive material layer or the metal may be composed of an alloy or a metal mixture of the above materials. Since the diamond-like carbon has a better coefficient of thermal expansion (CTE), the multi-layer composite structure of the drilled carbon/conductive material as an electrode can be used to buffer thermal expansion when the overall light-emitting diode is thermally expanded. The stress, so the overall structure of the light-emitting diode is not easily affected, and at the same time, the heat loss of the light-emitting diode during operation can be accelerated, and the possibility that the overall structure of the light-emitting diode is damaged by heat is reduced. For example, aluminum (Al), titanium (Ti), molybdenum (Mo), nickel (Ni), platinum (Pt), and gold (Au) may be used as the conductive material layer, and the conductive diamond-like carbon layer By laminating one another, a multi-layer composite structure of a drilled carbon/conductive material as described in the present invention can be constructed.

In a specific aspect of the present invention, the first type of carbon/conductive material multilayer composite structure may include a first type of carbon/metal stack and a first metal alloy layer, and the first metal alloy layer And disposed on the first type of drilled carbon/metal stack layer; and the second type of drilled carbon/conductive material multilayer composite structure may include a second diamond-like carbon/metal stack layer and a second metal alloy layer, and the first a two metal alloy layer is disposed on the second type of drill carbon/metal stack On the floor. For example, the first type of drilled carbon/metal stack layer and the second type of drilled carbon/metal stack layer may be a multi-layer structure in which 1 to 10 layers of diamond-like carbon and 1 to 10 layers of titanium are alternately stacked, and The diamond-like carbon is electrically connected to the first metal alloy layer and the second metal alloy layer independently; in another aspect of the invention, the first diamond-like carbon/metal stack layer and the second diamond-like carbon layer The metal-stacking layer may be a multi-layer structure in which 2 to 4 layers of diamond-like carbon and 2 to 4 layers of titanium are alternately stacked, and the first metal alloy layer and the second metal alloy layer are electrically connected to each other independently by diamond-like carbon; The first metal alloy layer and the second metal alloy layer may be a three-layer structure in which titanium/molybdenum/titanium are sequentially stacked, and each of the first diamond-like carbon/metal stack layers is electrically connected to each other by titanium. And the second type of drilled carbon/metal stack layer. Accordingly, the multi-layer composite structure of the carbon/conductive material can form 5 to 23 layers of a multi-layer composite structure formed by stacking carbon-like carbon, titanium and molybdenum, thereby optimizing the flip-chip light-emitting diode of the present invention. Heat dissipation efficiency.

In a preferred aspect of the present invention, the first type of drilled carbon/metal stack layer and the second type of drilled carbon/metal stack layer may be a multi-layer structure in which two layers of diamond-like carbon and two layers of titanium are alternately stacked. The first metal alloy layer and the second metal alloy layer may be a three-layer structure in which titanium/molybdenum/titanium is sequentially stacked, so that the carbon/conductive material multilayer composite structure can form 7 layers. a multilayer composite structure formed by stacking carbon, titanium and molybdenum; in another preferred aspect of the invention, the first type of carbon/metal stack layer and the second carbon/metal stack The multi-layer structure in which four layers of diamond-like carbon and four layers of titanium are alternately stacked, and the first metal alloy layer and the second metal alloy layer may be a three-layer structure in which titanium/molybdenum/titanium is sequentially stacked. Therefore, this type of drill The carbon/conductive material multi-layer composite structure can form 11 layers of a multi-layer composite structure formed by stacking carbon-like carbon, titanium and molybdenum; in the present invention, the first type of carbon/metal stacking layer and the second type of carbon-drilling layer The metal-stacking layer, or the first metal alloy layer and the second metal alloy layer, can be arbitrarily adjusted at any time according to the needs of use, and the foregoing structures can all have the same or different number of laminations or components, and the present invention Not limited to this.

In the flip-chip light emitting diode of the present invention, the surface of the first type of carbon/conductive material multilayer composite structure and the surface of the second type of carbon/conductive material multilayer composite structure may form a coplanar plane; or, the first type The surface of the conductive diamond-like carbon layer of the carbon/conductive material multi-layer composite structure and the surface of the conductive diamond-like carbon layer of the second type of carbon/conductive material multilayer composite structure may form a common plane; or, the first type of drill carbon/ The surface of the multi-layer composite structure of the conductive material and the surface of the second type of carbon/conductive material multilayer composite structure may form a coplanar surface.

The flip-chip light-emitting diode of the present invention may further optionally include: a first metal solder layer on the first type of carbon/conductive material multilayer composite structure; and a second metal solder layer in the second The diamond-like carbon/conductive material multilayer composite structure, wherein a surface of the second metal solder layer forms a coplanar with a surface of the first metal solder layer. The above-mentioned flip-chip light-emitting diode of the present invention, as the name implies, is flip-chip bonded to another circuit carrier, so that the surface of the P-type electrode and the N-type electrode of the final LED is used for bonding the metal solder layer. They usually form a coplanar plane with each other.

The material of the first metal solder layer or the second metal solder layer may be selected from the group consisting of bismuth (Si), nickel (Ni), titanium (Ti), aluminum (Al), platinum (Pt), gold (Au), and tin (Sn). At least one of the group of indium (In), chromium (Cr), or an alloy thereof. change In other words, the first metal solder layer or the second metal solder layer may be formed using an alloy or a metal mixture of the above materials, and is selected to be a material having a high thermal diffusivity, so that the heat dissipation efficiency is improved when the flip chip type LED is used.

The flip-chip light-emitting diode of the present invention may optionally further comprise a reflective layer sandwiched between the semiconductor epitaxial multilayer composite structure and the second electrode, and the reflective layer may be made of indium tin oxide (indium). Tin oxide, ITO), aluminum zinc oxide (AZO), zinc oxide (ZnO), graphene, aluminum, silver, nickel (Ni), cobalt (Co), palladium (Pd), platinum ( Pt), gold (Au), zinc (Zn), tin (Sn), antimony (Sb), lead (Pb), copper (Cu), copper silver (CuAg), nickel silver (NiAg), alloys thereof, or Metal mixture. The above copper silver (CuAg) and nickel silver (NiAg) refer to a eutectic metal. In other words, it can also be a multi-layer metal structure, in addition to achieving the reflection effect, the effect of forming an ohmic contact can also be achieved.

In order to achieve the above object, another aspect of the present invention provides a chip on board (COB) including: a circuit carrier board; and the above-mentioned flip chip type light emitting diode of the present invention The first metal solder layer and the second metal solder layer are packaged on the circuit carrier.

In the above-mentioned wafer-on-board package structure, the circuit carrier board may comprise an insulating layer and a circuit substrate, wherein the insulating layer is made of insulating diamond-like carbon, aluminum oxide, ceramic, diamond-containing epoxy. The resin, or a composition thereof, or a metal material having a surface covered with the insulating layer, and the circuit substrate may be a metal plate, a ceramic plate or a substrate. In addition, the The surface of the circuit carrier can also optionally include a type of drilled carbon layer to increase heat dissipation.

The embodiments of the present invention are described by way of specific examples, and those skilled in the art can readily appreciate the other advantages and advantages of the present invention. The present invention may be embodied or applied in various other specific embodiments, and various modifications and changes can be made without departing from the spirit and scope of the invention.

The drawings in the embodiments of the present invention are simplified schematic diagrams. However, the drawings show only the components related to the present invention, and the components shown therein are not in actual implementation, and the number of components, the shape, and the like in actual implementation are a selective design, and the component layout thereof. The pattern may be more complicated.

Embodiment 1

1A to FIG. 1H are schematic diagrams showing the flow structure of a method for preparing a flip-chip light-emitting diode according to Embodiment 1 of the present invention. First, as shown in FIG. 1A, a substrate 20 is provided having a first surface 201 and a second surface 202 opposite to the first surface 201. Next, as shown in FIG. 1B, a semiconductor epitaxial multilayer composite structure 21 is formed over the second surface 202 of the substrate 20, wherein the semiconductor epitaxial multilayer composite structure 21 comprises an undoped semiconductor epitaxial layer 211, a first semiconductor epitaxial layer 212, an active intermediate layer 213, and a second semiconductor epitaxial layer 214, wherein the undoped semiconductor epitaxial layer 211, the first semiconductor epitaxial layer 212, the active intermediate layer 213 and the second semiconductor epitaxial layer 214 are stacked, and the undoped semiconductor epitaxial layer 211 is sandwiched between the first semiconductor epitaxial layer 212. The active intermediate layer 213 is interposed between the first semiconductor epitaxial layer 212 and the second semiconductor epitaxial layer 214. In this embodiment, the material of the semiconductor epitaxial multilayer composite structure 21 is gallium nitride (GaN), and the first semiconductor epitaxial layer 212 is N-type, and the second semiconductor epitaxial layer 214 is P-type. The undoped semiconductor epitaxial layer 211 serves as a buffer layer between the first semiconductor epitaxial layer 212 and the substrate 20 to avoid lattice mismatch between the first semiconductor epitaxial layer 212 and the substrate 20. The degree is too large, and when the first semiconductor epitaxial layer 212 is grown, the epitaxial defect density is excessively high, and the situation that the flip-chip emitting diode of the embodiment has electrostatic discharge and current leakage can be avoided. However, the material suitable for the semiconductor epitaxial multilayer composite structure of the present invention is not limited thereto, and other materials commonly used in the art may also be used. In addition, the active intermediate layer can be selected according to requirements. In the embodiment, the active intermediate layer 213 is a multi-quantum well layer for improving the efficiency of converting electrical energy into light energy in the light-emitting diode.

Referring to FIG. 1B, a reflective layer 22 is formed on the surface of the second semiconductor epitaxial layer 214 of the semiconductor epitaxial multilayer composite structure 21. In this embodiment, the reflective layer 22 may be selected from indium tin oxide (ITO), aluminum zinc oxide (AZO), zinc oxide (ZnO), graphene, aluminum, and silver. , nickel (Ni), cobalt (Co), palladium (Pd), platinum (Pt), gold (Au), zinc (Zn), tin (Sn), antimony (Sb), lead (Pb), copper (Cu) , copper and silver (CuAg), And at least one of the groups of nickel silver (NiAg), in other words, it can also be a multi-layer metal structure, in addition to achieving a reflection effect, the effect of forming an ohmic contact can also be achieved. This step of forming a reflective layer can be selectively performed as desired by those skilled in the art to which the present invention pertains. In other words, if a reflective layer is not intended to be provided, the step of forming the reflective layer 22 can be skipped without being performed.

Then, referring to FIG. 1C, a blind via 23 is formed in the semiconductor epitaxial multilayer composite structure 21, wherein the blind via 23 penetrates the second semiconductor epitaxial layer 214, and the blind via 23 abuts the first semiconductor On the epitaxial layer 212. Next, referring to FIG. 1 , a second electrode 241 is formed over the second semiconductor epitaxial layer 214 . Referring to FIG. 1E , a first electrode 251 is formed in the blind via 23 , and the first electrode 251 is located on the first semiconductor epitaxial layer 212 of the semiconductor epitaxial multilayer composite structure 21 . In this embodiment, the material of the second electrode 241 and the first electrode 251 is a chromium/gold/platinum alloy, and the second electrode 241 is a P-type, and the first electrode 251 is an N-type.

Next, referring to FIG. 1F, an insulating protective layer 26 is formed covering the sidewall of the reflective layer 22, the sidewall of the second electrode 241 is exposed to a portion of the surface of the second electrode 241, and the semiconductor epitaxial multilayer composite structure 21 is covered. a sidewall of the first semiconductor epitaxial layer 212, a sidewall of the active intermediate layer 213, a sidewall of the second semiconductor epitaxial layer 214, and an inner wall surface of the blind via 23 and exposed by the blind via 23 The surface of the first electrode 251. The insulating protective layer 26 is a stacked structure having different reflective materials (described in FIG. 2A) for protecting the first semiconductor epitaxial layer 212, the second semiconductor epitaxial layer 214, and the The side wall of the active intermediate layer 213, and isolates the The first electrode 251, the second semiconductor epitaxial layer 214, and the active intermediate layer 213 are in direct contact with another subsequently formed member.

Furthermore, as shown in FIG. 1G, a first type of carbon/conductive material multilayer composite structure 252 and a second type of carbon/conductive material multilayer composite are formed on the first electrode 251 and the second electrode 241, respectively. a structure 242, and the first type of drilled carbon/conductive material multilayer composite structure 252 is filled in the blind hole 23 of the inner wall surface covered with the insulating protective layer 26, and contacts the first electrode 251, so that the first type of drill The carbon/conductive material multilayer composite structure 252 forms a coplanar with the second type of carbon/conductive material multilayer composite structure 242.

Finally, as shown in FIG. 1H, a first metal solder layer 29 is formed on the surface of the first type of carbon/conductive material multilayer composite structure 252 and the second type of carbon/conductive material multilayer composite structure 242, respectively. The second metal solder layer 28, wherein the surface of the first metal solder layer 29 and the surface of the second metal solder layer 28 form a coplanar plane. In this embodiment, the first metal solder layer 29 and the second metal solder layer 28 are composed of a gold layer and a gold tin layer, and the gold tin layer is a eutectic conductive material layer.

Accordingly, as shown in FIG. 1A to FIG. 1H, the above-mentioned flip-chip light-emitting diode comprises a substrate 20 having a first surface 201 and a second surface 202 opposite to the first surface 201. a semiconductor epitaxial multilayer composite structure 21 is disposed on the second surface 202 of the substrate 20, and the semiconductor epitaxial multilayer composite structure 21 includes an undoped semiconductor epitaxial layer 211, a first semiconductor epitaxial layer 212, An active intermediate layer 213 and a second semiconductor epitaxial layer 214, wherein the undoped semiconductor epitaxial layer 211, the first semiconductor epitaxial layer 212, the active intermediate layer 213, and the second semiconductor epitaxial layer Floor 214 is a stacked arrangement, and the undoped semiconductor epitaxial layer 211 is interposed between the first semiconductor epitaxial layer 212 and the substrate 20, and the active intermediate layer 213 is sandwiched between the first semiconductor Between the crystal layer 212 and the second semiconductor epitaxial layer 214; a reflective layer 22 on the surface of the second semiconductor epitaxial layer 214 of the semiconductor epitaxial multilayer structure 21; a blind via 23 disposed on the semiconductor strip In the crystalline multilayer composite structure 21, and through the reflective layer 22, the second semiconductor epitaxial layer 214 and the active intermediate layer 213, the blind via 23 is resisted on the first semiconductor epitaxial layer 212; The first electrode 251 is disposed on the blind hole 23 of the semiconductor epitaxial multilayer composite structure 21, and is disposed above the first semiconductor epitaxial layer 212 of the semiconductor epitaxial multilayer composite structure 21; A type of carbon/conductive material multilayer composite structure 252 is filled in the blind via 23 of the semiconductor epitaxial multilayer composite structure 21 and overlying the first electrode 251, and electrically connected to the semiconductor epitaxial multilayer composite The first semiconductor epitaxial layer 212 of the structure 21; a first metal solder layer 29 is disposed on the first diamond-like carbon/conductive material multilayer composite structure 252; a second electrode 241 is disposed above the second semiconductor epitaxial layer 214 of the semiconductor epitaxial multilayer composite structure 21, and The second semiconductor epitaxial layer 214 of the semiconductor epitaxial multilayer composite structure 21 is electrically connected via the reflective layer 22; a second type of carbon/conductive material multilayer composite structure 242 is located in the semiconductor epitaxial multilayer composite structure 21 Above the second electrode 241, and electrically connected to the second semiconductor epitaxial layer 214 of the semiconductor epitaxial multilayer composite structure 21; a second metal solder layer 28 located in the second diamond-like carbon/conductive material multilayer composite a structure 242; wherein, the surface of the second type of carbon/conductive material multilayer composite structure 242 and the first type of carbon/conductive material multilayer composite structure The surface of 252 forms a coplanar plane, and the surface of the second metal solder layer 28 and the surface of the first metal solder layer 29 also form a coplanar surface; and an insulating protective layer 26 that is insulated from the first electrode 251. The second electrode 241, the reflective layer 22, the sidewalls of the first semiconductor epitaxial layer 212 and the second semiconductor epitaxial layer 214, and the inner wall surface of the blind via 23, and isolate the first diamond-like carbon Direct contact between the conductive material multilayer composite structure 252 and the second semiconductor epitaxial layer 214.

2A and 2B are schematic views showing the side structure of the first embodiment of the present invention. 2A is a side view of the embodiment of the present invention, which is taken from the portion A taken by the dotted line in FIG. 1H, and the insulating protective layer 26 is disposed on the outer side of the semiconductor epitaxial multilayer composite structure 21, which includes a first An insulating layer 261 and a second insulating layer 262, the first insulating layer 261 and the second insulating layer 262 are stacked; wherein the materials of the first insulating layer 261 and the second insulating layer 262 are respectively Different refractive index materials may be made, and at least one of different refractive index materials may be selected from the group consisting of diamond-like carbon (DLC), titanium oxide (Ti _x O _y ), cerium oxide (SiO ₂ ), and tantalum nitride (SiN). a group of gallium arsenide (GaAs) and aluminum arsenide (AlAs); the first insulating layer 261 and the second insulating layer 262 are periodically stacked periodically to have a Bragg reflector The light emitted from the surface of the flip-chip light-emitting diode of the present embodiment can be reflected by the insulating protective layer 26 to the light-emitting surface of the flip-chip light-emitting diode, thereby improving the output light rate. In this embodiment, the material of the first insulating layer 261 is cerium oxide (SiO2, refractive index: 1.55), and the material of the second insulating layer 262 is titanium dioxide (TiO ₂ , refractive index: 2.51), and the first An insulating layer 261 and the second insulating layer 262 are alternately formed into a 14-layer stacked structure.

2B is a schematic view showing another side structure of the present embodiment, except that the insulating protective layer 26 is disposed on the outer side of the semiconductor epitaxial multilayer composite structure 21, and includes a first insulating layer 261 and a second insulating layer. A metal protective layer 27 is disposed on the outermost side of the insulating protective layer 26, and the metal protective layer 27 can be at least one selected from the group consisting of aluminum (Al), titanium (Ti), molybdenum (Mo), and nickel (Ni). a group of silver (Ag), gold (Au), platinum (Pt), or an alloy thereof, and therefore, the flip-chip light emitting diode emission of the present embodiment can be further increased by the metal protective layer 27. The light from the side is reflected to the reflectivity of the light-emitting surface of the flip-chip light-emitting diode, thereby further increasing the output light rate. In the present embodiment, the metal protective layer 27 is composed of silver (Ag, refractive index: 0.329).

3A is a schematic view showing a stacking structure of a first type of carbon/conductive material multilayer composite structure 252 according to a first embodiment of the present invention. Referring to FIG. 3A, which is taken from the portion B of the dotted line of FIG. 1G, the first type of carbon/conductive material multilayer composite structure 252 includes a layer 2 diamond-like carbon 25211 and 2 layers of titanium 25213. a first type of drilled carbon/metal stack layer 2521 formed by stacking, and a first metal alloy layer 2522 formed by sequentially stacking titanium 25223/molybdenum 25222/titanium 25223, and the first metal alloy layer 2522 is And disposed on the first type of drilled carbon/metal stack layer 2521; the second type of drilled carbon/conductive material multilayer composite structure 242 of the first embodiment has substantially the same stack as the first type of drilled carbon/conductive material multilayer composite structure 252 The structure comprises a second type of carbon/metal stack layer and a second metal alloy layer (not shown), and the second metal alloy layer is disposed on the second diamond-like carbon/metal stack layer, wherein , The second type of carbon/metal stacking layer is a multi-layer structure in which two layers of diamond-like carbon and two-titanium are alternately stacked, and the second metal alloy layer is also a three-layer structure in which titanium/molybdenum/titanium is sequentially stacked. However, the thickness of each stacked layer in the first type of carbon/conductive material multilayer composite structure 252 is greater than the thickness of each stacked layer in the second diamond-like carbon/metal stacked layer, according to which the first type of drilling of the first embodiment is The carbon/conductive material multilayer composite structure 252 and the second diamond-like carbon/conductive material multilayer composite structure 242 can form a coplanar plane. However, it should be understood that, in the first embodiment, although the thickness of the stacked layer is adjusted, the first type of carbon/conductive material multilayer composite structure 252 and the second type of carbon/conductive material multilayer composite structure 242 form a coplanar. However, those skilled in the art can also adjust the number of stacked layers of diamond-like carbon or conductive materials (titanium, molybdenum) according to their needs, so that the first type of carbon/conductive material multilayer composite structure 252 and the same The second type of carbon/conductive material multilayer composite structure 242 forms a coplanar plane, and the invention is not limited thereto.

Embodiment 2

Referring to FIG. 1A to FIG. 1H, and referring to FIG. 3B together, the flip-chip light-emitting diode system obtained in this embodiment is substantially the same as the structure of the first embodiment, and the difference lies in the first type of carbon/metal stacking layer. The 2521 series is formed by stacking 4 layers of diamond-like carbon 25211 and 4 layers of titanium 25213, and the second type of carbon/metal stacking layer is also formed by stacking 4 layers of diamond-like carbon and 4 layers of titanium (not shown). ). Similarly, the thickness of the stacked layer in the first type of carbon/conductive material multilayer composite structure 252 is greater than the second type of carbon/metal stacked layer, so that the first type of carbon/conductive material multilayer composite structure 252 and the first The second type of carbon/conductive material multilayer composite structure 242 can form a coplanar plane. Therefore, in this embodiment In the second, the first type of carbon/conductive material multilayer composite structure 252 formed includes a first type of drilled carbon/metal stack layer 2521 which is formed by stacking 4 layers of diamond-like carbon 25211 and 4 layers of titanium 25213, and The first metal alloy layer 2522 is formed by sequentially stacking titanium 25223/molybdenum 25222/titanium 25223; the second type of carbon/conductive material multilayer composite structure comprises four layers of diamond-like carbon and four layers of titanium alternately stacked. The first type of carbon/metal stacking layer is formed, and a second metal alloy layer (not shown) is formed by sequentially stacking titanium/molybdenum/titanium.

Accordingly, the flip-chip light-emitting diode of the second embodiment comprises: a substrate 20 having a first surface 201 and a second surface 202 opposite to the first surface 201; a semiconductor epitaxial multilayer composite The structure 21 is located on the second surface 202 of the substrate 20 and the semiconductor epitaxial multilayer composite structure 21 comprises an undoped semiconductor epitaxial layer 211, a first semiconductor epitaxial layer 212, an active intermediate layer 213, and a second semiconductor epitaxial layer 214, wherein the undoped semiconductor epitaxial layer 211, the first semiconductor epitaxial layer 212, the active intermediate layer 213, and the second semiconductor epitaxial layer 214 are stacked. The undoped semiconductor epitaxial layer 211 is interposed between the first semiconductor epitaxial layer 212 and the substrate 20, and the active intermediate layer 213 is interposed between the first semiconductor epitaxial layer 212 and the first Between the two semiconductor epitaxial layers 214; a reflective layer 22 on the surface of the second semiconductor epitaxial layer 214 of the semiconductor epitaxial multilayer composite structure 21; a blind via 23 disposed in the semiconductor epitaxial multilayer composite structure 21 And extending through the reflective layer 22, the second semiconductor The epitaxial layer 214 and the active intermediate layer 213, and the blind via 23 is resisted on the first semiconductor epitaxial layer 212; a first electrode 251, the first electrode 251 is disposed on the semiconductor epitaxial multilayer composite structure 21 of the blind hole 23, and it is located at Above the first semiconductor epitaxial layer 212 of the semiconductor epitaxial multilayer composite structure 21; a first type of carbon/conductive material multilayer composite structure 252 is filled in the blind via 23 of the semiconductor epitaxial multilayer composite structure 21, And covering the first electrode 251 above the second electrode 251, and electrically connecting the first semiconductor epitaxial layer 212 of the semiconductor epitaxial multilayer structure 21; a first metal solder layer 29, located in the first diamond-like carbon/conductive material a second electrode 241 is disposed over the second semiconductor epitaxial layer 214 of the semiconductor epitaxial multilayer structure 21, and is electrically connected to the semiconductor epitaxial multilayer structure 21 via the reflective layer 22. The second semiconductor epitaxial layer 214; a second type of carbon/conductive material multilayer composite structure 242 is disposed above the second electrode 241 of the semiconductor epitaxial multilayer composite structure 21, and electrically connected to the semiconductor epitaxial multilayer The second semiconductor epitaxial layer 214 of the composite structure 21; a second metal solder layer 28 on the second diamond-like carbon/conductive material multilayer composite structure 242; wherein the second type of carbon/conductive material multilayer The surface of the structure 242 is coplanar with the surface of the first type of carbon/conductive material multilayer composite structure 252, and the surface of the second metal solder layer 28 and the surface of the first metal solder layer 29 also form a coplanar surface; And an insulating protective layer 26 that isolates the sidewalls of the first electrode 251, the second electrode 241, the reflective layer 22, the first semiconductor epitaxial layer 212, and the second semiconductor epitaxial layer 214, and The inner wall surface of the blind hole 23 is insulated from direct contact between the first diamond-like carbon/conductive material multilayer composite structure 252 and the second semiconductor epitaxial layer 214.

Comparative example

In order to compare the heat dissipation effect of the carbon-coated/conductive material multilayer composite structure of the present invention, the flip-chip light-emitting diode obtained in the first embodiment is substantially the same as the structure of the first embodiment, except that the first metal alloy is different. The layer and the second metal alloy layer are a titanium/dye-like carbon/titanium stack structure; similarly, the flip-chip light-emitting diode obtained in the second embodiment is substantially the same as the structure of the second embodiment, and the difference is The first metal alloy layer and the second metal alloy layer are also a titanium/dye-like carbon/titanium stack structure. It should be understood that, in general, in the case of energization, the greater the resistance of an object, the more likely it is that the electrical energy flowing through the object is converted to heat loss. Accordingly, in the first and second embodiments and the first and second comparative examples, the difference in heat dissipation effect can be compared via a resistance test result.

Please refer to FIG. 4A , which is a horizontal resistance test chart of a multilayer carbon/conductive material multilayer composite structure according to the first and second embodiments of the present invention, wherein the horizontal axis is voltage (V) and the vertical axis is current ( A). As shown in FIG. 4A, when the first metal alloy layer and the second metal alloy layer are a titanium/molybdenum/titanium stacked structure, the titanium/diamond-like carbon is compared to the first metal alloy layer and the second metal alloy layer. / Titanium stacked structure, the carbon/conductive material multilayer composite structure of the first embodiment and the second embodiment has a large current (A) under the same voltage (V) condition, that is, the horizontal resistance is small. In addition, comparing the results of the horizontal electric group test of the multi-layer composite structure of the drilled carbon/conductive material such as the first and second embodiments, it is found that when the number of stacked layers of the diamond-like carbon/metal stack layer is increased, it is also helpful to reduce the Horizontal resistance. Please refer to FIG. 4B , which is a vertical resistance test diagram of a multilayer carbon/conductive material multilayer composite structure according to the first and second embodiments of the present invention, wherein the horizontal axis is voltage (V) and the vertical axis is current ( A). As shown in FIG. 4B, when the first metal alloy layer and the second metal alloy layer are a titanium/molybdenum/titanium stacked structure, The first metal alloy layer and the second metal alloy layer are titanium/dye-like carbon/titanium stacked structures, and the multilayer carbon/conductive material multilayer composite structures of Embodiments 1 and 2 are under the same voltage (V) condition. Small current (A), that is, the vertical resistance is large. Similarly, comparing the vertical electric group test results of the carbon/conductive multilayer composite structure of Examples 1 and 2, it can also be found that when the number of stacked layers of the diamond-like carbon/metal stack layer is increased, it also contributes to improvement. Its vertical resistance. Accordingly, it can be seen from the above two resistance test results that when the first metal alloy layer and the second metal alloy layer are a titanium/molybdenum/titanium stacked structure, the heat dissipation effect of the diamond-like carbon/conductive material multilayer composite structure is better; And when the number of stacked layers of the diamond-like carbon/metal stack layer is increased, it also helps to improve the heat dissipation effect.

Embodiment 3

Please refer to FIG. 5 , which is a schematic structural diagram of a flip-chip light-emitting diode according to Embodiment 3 of the present invention. As shown in FIG. 5, the present embodiment is substantially the same as the flip-chip LED of the first embodiment, and includes a substrate 40 having a first surface 401 and a first surface 401 opposite to the first surface 401. a second surface 402; a semiconductor epitaxial multilayer composite structure 41 on the second surface 402 of the substrate 40 and the semiconductor epitaxial multilayer composite structure 41 includes an undoped semiconductor epitaxial layer 411, a first semiconductor a seed layer 412, an active intermediate layer 413, and a second semiconductor epitaxial layer 414, wherein the undoped semiconductor epitaxial layer 411, the first semiconductor epitaxial layer 412, the active intermediate layer 413, and the first The two semiconductor epitaxial layers 414 are stacked, and the undoped semiconductor epitaxial layer 411 is interposed between the first semiconductor epitaxial layer 412 and the substrate 40, and the active intermediate layer 413 is interposed. Between the first semiconductor epitaxial layer 412 and the second semiconductor epitaxial layer 414; a reflective layer 42. The surface of the second semiconductor epitaxial layer 414 of the semiconductor epitaxial multilayer composite structure 41; a blind via 43 disposed in the semiconductor epitaxial multilayer composite structure 41, and extending through the reflective layer 42 and the second semiconductor The epitaxial layer 414 and the active intermediate layer 413, and the blind via 43 is resisted on the first semiconductor epitaxial layer 412; a first electrode 451 disposed on the semiconductor epitaxial multilayer composite structure The blind hole 43 of the 41 is located above the first semiconductor epitaxial layer 412 of the semiconductor epitaxial multilayer composite structure 41; a first type of carbon/conductive material multilayer composite structure 452 is filled in the semiconductor The blind via hole 43 of the crystalline multilayer composite structure 41 is over the first electrode 451 and electrically connected to the first semiconductor epitaxial layer 412 of the semiconductor epitaxial multilayer composite structure 41; a first metal solder layer 49, on the first type of carbon/conductive material multilayer composite structure 452; a second electrode 441 is located above the second semiconductor epitaxial layer 414 of the semiconductor epitaxial multilayer composite 41, and through the reflective layer 42 Electrically connecting the semiconductor The second semiconductor epitaxial layer 414 of the epitaxial multilayer composite structure 41; a second type of carbon/conductive material multilayer composite structure 442 is disposed above the second electrode 441 of the semiconductor epitaxial multilayer composite structure 41, and is electrically The second semiconductor epitaxial layer 414 of the semiconductor epitaxial multilayer composite structure 41 is connected to the second metal-like solder layer 48 on the second diamond-like carbon/conductive material multilayer composite structure 442; wherein the second type The surface of the drilled carbon/conductive material multilayer composite structure 442 forms a coplanar surface with the surface of the first type of drilled carbon/conductive material multilayer composite structure 452, and the surface of the second metal solder layer 48 and the first metal solder layer 49 The surface also forms a common plane; and an insulating protective layer 46 is provided to isolate the first electrode 451, the second electrode 441, the reflective layer 42, the first half a conductor epitaxial layer 412 and sidewalls of the second semiconductor epitaxial layer 414, and an inner wall surface of the blind via 43 and isolating the first diamond-like carbon/conductive material multilayer composite structure 452 and the second semiconductor epitaxial layer In the present embodiment, the first surface 401 of the substrate 40 can be formed into a roughened surface by an etching process. On the other hand, the first surface 401 of the substrate 40 can be formed by an etching process. The second surface 402 of the substrate 40 can form a patterned surface by a lithography, thereby effectively improving the light-emitting rate of the flip-chip light-emitting diode of the present invention, and can control the flip-chip light-emitting light of the embodiment. Polar body polarization and light field distribution.

Embodiment 4

Referring to FIG. 6, it is a schematic structural view of a package structure on a wafer board of the present embodiment. As shown in FIG. 6, the package structure on the wafer board includes: a circuit carrier board 6; and the flip chip type light emitting diode 2 obtained in the first embodiment, through the first metal solder layer 29 and the first The two-metal soldering layer 28 is electrically connected to the circuit carrier board 6. The circuit carrier board 6 includes an insulating layer 61, a circuit board 60, and an electrical connection pad 63. The material of the insulating layer 61 can be selected from diamond-like carbon. The aluminum oxide, the ceramic, the diamond-containing epoxy resin, or a mixture of the above materials, the circuit substrate 60 is a metal plate, a ceramic plate or a substrate.

In the package structure of the wafer board, the first metal solder layer 29 and the second metal solder layer 28 and the circuit carrier 6 can be formed by soldering through the solder 62 formed on the surface of the electrical connection pad 63. The electrical connection pads 63 are electrically connected.

Embodiment 5

Referring to FIG. 7, it is a schematic structural view of a package structure on a wafer board of the present embodiment. As shown in FIG. 7, the package structure on the wafer board includes: a circuit carrier 6; and the flip chip type light emitting diode 4 obtained in the second embodiment, through the first metal solder layer 49 and the first The second metal soldering layer 48 is electrically connected to the circuit carrier board 6. The circuit carrier board 6 includes an insulating layer 61, a circuit board 60, and an electrical connection pad 63. The insulating layer 61 is made of a diamond-like carbon. The aluminum oxide, the ceramic, the diamond-containing epoxy resin, or a mixture of the above materials, the circuit substrate 60 is a metal plate, a ceramic plate or a substrate.

In the package structure of the wafer board, the first metal solder layer 49 and the second metal solder layer 48 and the circuit carrier 6 can be formed by soldering through the solder 62 formed on the surface of the electrical connection pad 63. The electrical connection pads 63 are electrically connected.

In summary, the flip-chip light-emitting diode of the present invention has a structural thermal expansion mismatch and a concentrated light-emitting structure design, and can continuously heat the heat generated by the light-emitting diode. Lost. Even if some of the heat is not dissipated in the self-luminous diode to promote thermal expansion of the overall structure, the multi-layer composite structure of the diamond-like carbon/conductive material disposed therein can buffer the corresponding thermal stress, and the protection is not damaged, and the beam can be concentrated. Glow out the light and increase the light rate.

The above-mentioned embodiments are merely examples for convenience of description, and the scope of the claims is intended to be limited to the above embodiments.

2, 4‧‧‧ flip-chip light-emitting diode

20, 40‧‧‧ substrate

201, 401‧‧‧ first surface

202, 402‧‧‧ second surface

21, 41‧‧‧Semiconductor epitaxial multilayer composite structure

211, 411‧‧‧ undoped semiconductor epitaxial layer

212, 412‧‧‧ first semiconductor epitaxial layer

213, 413‧‧‧ active intermediate layer

214, 414‧‧‧Second semiconductor epitaxial layer

22, 42‧‧‧reflective layer

23, 43‧‧ ‧ blind holes

2411, 441‧‧‧ second electrode

242, 442‧‧‧Second type of carbon/conductive material multilayer composite structure

251, ‧‧‧‧first electrode

252, 452‧‧‧First class of carbon/conductive material multilayer composite structures

2521‧‧‧First class carbon/metal stacking layer

25211‧‧‧Drilling carbon

25213,25223‧‧‧Titanium

2522‧‧‧First metal alloy layer

25222‧‧‧Mo

26, 46‧‧‧Insulating protective layer

261‧‧‧First insulation

262‧‧‧Second insulation

27‧‧‧Metal protective layer

28, 48‧‧‧Second metal welding layer

29, 49‧‧‧First metal welding layer

6‧‧‧Circuit carrier board

60‧‧‧ circuit board

61‧‧‧Insulation

62‧‧‧ solder

63‧‧‧Electrical connection pads

1A to FIG. 1H are schematic structural diagrams showing a method for preparing a flip-chip light-emitting diode according to Embodiment 1 of the present invention.

2A and 2B are schematic views showing the side structure of the first embodiment of the present invention.

3A and 3B are schematic views showing a multi-layer composite structure of a drilled carbon/conductive material such as a flip-chip type light-emitting diode of the present invention.

4A and FIG. 4B are resistance test diagrams of a multi-layer composite structure of a drilled carbon/conductive material such as a flip-chip type light-emitting diode of the present invention.

FIG. 5 is a schematic structural view of a flip-chip type light emitting diode according to Embodiment 2 of the present invention.

FIG. 6 is a schematic view showing the structure of a package structure on a wafer board in the first embodiment of the present invention.

FIG. 7 is a schematic structural view showing a package structure on a wafer board in Embodiment 2 of the present invention.

2‧‧‧Flip-chip light-emitting diode

20‧‧‧Substrate

201‧‧‧ first surface

202‧‧‧ second surface

21‧‧‧Semiconductor epitaxial multilayer composite structure

211‧‧‧ Undoped semiconductor epitaxial layer

212‧‧‧First semiconductor epitaxial layer

213‧‧‧Active intermediate layer

214‧‧‧Second semiconductor epitaxial layer

22‧‧‧reflective layer

23‧‧‧Blind holes

241‧‧‧second electrode

242‧‧‧Second type of carbon/conductive material multilayer composite structure

251‧‧‧First electrode

252‧‧‧First class of carbon/conductive material multilayer composite structure

26‧‧‧Insulation protection layer

28‧‧‧Second metal soldering layer

29‧‧‧First metal soldering layer

Claims (22)

A flip-chip light emitting diode comprising: a substrate having a first surface and a second surface opposite to the first surface; a semiconductor epitaxial multilayer composite structure over the second surface of the substrate And including a first semiconductor epitaxial layer, a second semiconductor epitaxial layer, and a blind via, wherein the first semiconductor epitaxial layer and the second semiconductor epitaxial layer are stacked, and the blind via extends through the a semiconductor epitaxial layer; a first electrode located above the first semiconductor epitaxial layer of the semiconductor epitaxial multilayer composite structure; a first type of carbon/conductive material multilayer composite structure filled with the semiconductor epitaxial multilayer The blind hole of the composite structure covers the first electrode and is electrically connected to the first semiconductor epitaxial layer of the semiconductor epitaxial multilayer composite structure; and a second electrode is disposed on the semiconductor epitaxial multilayer composite structure Above the second semiconductor epitaxial layer; and a second type of carbon/conductive material multilayer composite structure, located above the second electrode of the semiconductor epitaxial multilayer composite structure, and electrically connected The semiconductor epitaxial semiconductor epitaxial layer of the second multilayer composite structures. The flip-chip light-emitting diode according to claim 1, further comprising an insulating protective layer covering the sidewall of the first semiconductor epitaxial layer of the semiconductor epitaxial multilayer composite structure and the second semiconductor beam a sidewall of the crystal layer and an inner wall surface of the blind via to isolate contact between the first type of carbon/conductive material multilayer composite structure and the second semiconductor epitaxial layer. The flip-chip light-emitting diode according to claim 2, wherein the insulating protective layer is provided by stacking two or more different refractive index materials. The flip-chip light-emitting diode according to claim 3, wherein the different refractive index material is at least one selected from the group consisting of insulated carbon (Isolated DLC), titanium oxide (Ti _x O _y ), and dioxide. A group consisting of yttrium (SiO2), gallium arsenide (GaAs), and aluminum arsenide (AlAs). The flip-chip light-emitting diode according to claim 2, further comprising a metal protective layer disposed on an outer side of the insulating protective layer. The flip-chip light-emitting diode according to claim 5, wherein the metal protective layer is at least one selected from the group consisting of aluminum (Al), titanium (Ti), molybdenum (Mo), nickel (Ni), and silver. A group consisting of (Ag), gold (Au), platinum (Pt), or an alloy thereof. The flip-chip light-emitting diode according to claim 1, wherein the second surface is a patterned surface. The flip-chip light-emitting diode according to claim 1, wherein the first surface is a patterned surface or a roughened surface. The flip-chip light-emitting diode according to claim 1, wherein the semiconductor epitaxial multilayer composite further comprises an undoped semiconductor epitaxial layer, the undoped semiconductor epitaxial layer being interposed A semiconductor epitaxial layer is between the second surface of the substrate. The flip-chip light-emitting diode according to claim 1, wherein the semiconductor epitaxial multilayer composite further comprises an active intermediate layer interposed between the first semiconductor epitaxial layer and the first Between two semiconductor epitaxial layers. The flip-chip light-emitting diode according to claim 1, wherein the first type of carbon/conductive material multilayer composite structure comprises a first type of carbon/metal stack and a first metal alloy. a layer, and the first metal alloy layer is disposed on the first diamond-like carbon/metal stack layer; and the second diamond-like carbon/conductive material multilayer composite structure includes a second diamond-like carbon/metal stack layer and a second metal alloy layer, and the second metal alloy layer is disposed on the second diamond-like carbon/metal stack layer. The flip-chip light-emitting diode according to claim 11, wherein the first type of carbon/metal stacking layer and the second type of carbon/metal stacking layer are 1 to 10 layers of diamonds The carbon and the 1 to 10 layers of titanium are alternately stacked to form a multi-layer structure, and the first metal alloy layer and the second metal alloy layer are electrically connected to each other independently by the diamond-like carbon. The flip-chip light emitting diode according to claim 11, wherein the first type of carbon/metal stacking layer and the second type of carbon/metal stacking layer are 2 to 4 layers of diamonds A multi-layer structure in which carbon is alternately stacked with 2 to 4 layers of titanium. The flip-chip light-emitting diode according to claim 11, wherein the first metal alloy layer and the second metal alloy layer are three-layer structure in which titanium/molybdenum/titanium are sequentially stacked. And electrically interconnecting the first diamond-like carbon/metal stack layer and the second diamond-like carbon/metal stack layer with titanium. The flip-chip light-emitting diode according to claim 1, wherein the surface of the first type of carbon/conductive material multilayer composite structure is The surface of the second type of carbon/conductive material multilayer composite structure forms a coplanar plane. The flip-chip light-emitting diode according to claim 1, further comprising: a first metal solder layer on the first type of carbon/conductive material multilayer composite structure; and a second metal solder layer The second metal-welded layer has a surface that is coplanar with the surface of the first metal solder layer. The flip-chip light-emitting diode according to claim 16, wherein the material of the first metal solder layer or the second metal solder layer is selected from the group consisting of nickel (Ni), titanium (Ti), and aluminum (Al). At least one of the group consisting of platinum (Pt), gold (Au), tin (Sn), indium (In), chromium (Cr), or alloys thereof. The flip-chip light-emitting diode according to claim 1, further comprising a reflective layer sandwiched between the semiconductor epitaxial multilayer composite structure and the second electrode. The flip-chip light-emitting diode according to claim 1, wherein the first semiconductor epitaxial layer, the first electrode, and the first diamond-like carbon/conductive material multilayer composite structure are N-type, The second semiconductor epitaxial layer, the second electrode, and the second diamond-like carbon/conductive material multilayer composite structure are P-type. A chip on board (COB) comprising: a circuit carrier; The flip-chip light-emitting diode according to any one of the preceding claims, wherein the first metal solder layer and the second metal solder layer are encapsulated on the circuit carrier. The package structure on a wafer-on-board according to claim 20, wherein the circuit carrier comprises an insulating layer and a circuit substrate, the material of the insulating layer is selected from the group consisting of diamond-like carbon, alumina, ceramic, And at least one of the groups of diamond-containing epoxy resins. The package structure on a wafer-on-board according to claim 21, wherein the circuit substrate is a metal plate, a ceramic plate or a substrate.