CN209626251U - A kind of semiconductor light-emitting elements, packaging body and light emitting device - Google Patents
A kind of semiconductor light-emitting elements, packaging body and light emitting device Download PDFInfo
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- CN209626251U CN209626251U CN201920651244.4U CN201920651244U CN209626251U CN 209626251 U CN209626251 U CN 209626251U CN 201920651244 U CN201920651244 U CN 201920651244U CN 209626251 U CN209626251 U CN 209626251U
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Abstract
A kind of semiconductor light-emitting elements, it includes the first conductive type semiconductor layer, the first electrode on the first conductive type semiconductor layer, first electrode includes the main weldering disc electrode for external routing, and main weldering disc electrode includes the ohmic contact layer contacted with the first conductive type semiconductor layer and wiring layers；Luminescent layer and second conductive type semiconductor layer on the downside of first conductive type semiconductor layer；There is current barrier layer on the downside of the second conductive type semiconductor layer of main weldering disc electrode vertical lower；There is second electrode, the surface of the wiring layers forms well-regulated difference of height, and the face between the ohmic contact layer and the first conductive type semiconductor layer is burnishing surface on the downside of current barrier layer.The design of the step design of wiring layers surface side or multiple figures can promote the dispersion lateral in wiring layers of routing power, weaken on the insulating layer on the downside of routing power vertical downward transportation to semiconductor light emitting sequence, so that the insulating layer below the main weldering disc electrode of first electrode be avoided to fall off.
Description
Technical field
It is related to a kind of semiconductor light-emitting elements, is specifically related to the semiconductor light-emitting elements with routing electrode.
Background technique
Light emitting diode is a kind of semiconductor devices for converting electrical energy into light.Compared with fluorescent lamp and incandescent lamp bulb,
LED has the advantages that such as low-power consumption, semipermanent life cycle, fast response time, safe and environmentally friendly.LED is more and more
Ground is used as the lighting device of such as various lamps and street lamp, the lighting unit of liquid crystal display device and other indoor and outdoors applications
Light source.
Existing light emitting diode includes horizontal type and vertical type.The light emitting diode of vertical type is by partly leading
Body light sequences are transferred on other substrates such as silicon, silicon carbide or metal substrate, and remove the work of original epitaxial growth substrate
Skill obtains, and compared to horizontal type, can be effectively improved the technology of support substrate bring extinction, current crowding or poor radiation
Problem.The transfer of substrate is usually bonding technology, and bonding is mainly the bonding of metal-metal high temperature and pressure, in semiconductor light emitting sequence
Metal bonding layer is formed between column side and substrate.The semiconductor sequence other side provides light emission side, and light emission side is configured with a routing
Electrode provides the injection or outflow of electric current, and the substrate below semiconductor sequence provides the outflow or inflow of electric current, and electricity is consequently formed
Stream passes perpendicularly through the light emitting diode of semiconductor light emitting sequence.
In order to improve light extraction efficiency, metallic reflector or metallic reflector are often designed in the metal bonding layer side
It combines to form ODR catoptric arrangement with current barrier layer, the light that goes out of metal bonding layer side is reflexed into light emission side, improves out light efficiency
Rate.
However using current barrier layer, current barrier layer below light emission side routing electrode due to routing outside
The case where falling off would tend to occur in the effect of power.
Utility model content
It is de- since the effect of routing external force would tend to occur in order to solve the current barrier layer below light emission side routing electrode
The problem of falling, the utility model provide a kind of following semiconductor light-emitting elements comprising the first conductive type semiconductor layer, first
First electrode on conductive type semiconductor layer, first electrode include the main weldering disc electrode for external routing, main weldering disc electrode
Including the ohmic contact layer contacted with the first conductive type semiconductor layer and wiring layers；
Luminescent layer and second conductive type semiconductor layer on the downside of first conductive type semiconductor layer；
There is current barrier layer on the downside of the second conductive type semiconductor layer of main weldering disc electrode vertical lower；
There is second electrode, it is characterised in that: the surface of the wiring layers forms well-regulated on the downside of current barrier layer
Difference of height, the face between the ohmic contact layer and the first conductive type semiconductor layer are burnishing surface.
Preferably, the well-regulated difference of height in the surface of the wiring layers is produced by multiple step structures and/or multiple figures
It is raw.
Preferably, multiple step structures are gradually reduced top surface horizontal area of the wiring layers from bottom surface to surface,
Top surface horizontal area is at least the half of bottom surface horizontal area.
Preferably, the top surface of the surface side of the wiring layers is plane.
Preferably, the wiring layers with a thickness of 1-2um.
Preferably, the wiring layers are that multiple regular figures on bottom and bottom combine to be formed.
Preferably, multiple regular figures are the column or taper platform or cylinder or cylindroid of square or polygon.
Preferably, at least there is ohmic contact layer, gold between the second electrode and second conductive type semiconductor layer
Belong to reflecting layer or electrically-conductive backing plate.
Preferably, the current barrier layer is oxide or nitride or fluoride.
Preferably, the ohmic contact layer is metal composites or transparency conducting layer.
Preferably, the wiring layers include at least one of Au, Ag, Al or Cu or the material of their combinations.
Preferably, the first conductive type semiconductor layer, luminescent layer and the second conductive type semiconductor layer are respectively
The material of AlxInyGa1-x-yP (0≤x≤1,0≤y≤1) and/or AlzGa1-zAs (0≤z≤1) is made.
It preferably, include the through hole of multiple exposed second conductive type semiconductor layer sides, electric current on current barrier layer
Barrier layer through hole is not located at below main weldering disc electrode.
The utility model provides a kind of packaging body of semiconductor light-emitting elements simultaneously, including first electrode, second electrode and
The first electrode of semiconductor light-emitting elements above-mentioned, packaging body is connected by the first electrode of metal wire and semiconductor light-emitting elements
It connects, the second electrode of packaging body and the second electrode of semiconductor light-emitting elements connect.
Preferably, the wiring layers of the first electrode of the semiconductor light-emitting elements include it is identical with metal wire ingredient at
Point.
The utility model provides a kind of light emitting device simultaneously, including use the packaging body of above-mentioned semiconductor light-emitting elements with
And the bracket of support packaging body.
The design of the step design of wiring layers surface side or multiple figures can promote routing power point lateral in wiring layers
It dissipates, weakens on the insulating layer on the downside of routing power vertical downward transportation to semiconductor light emitting sequence, to avoid being located at first electrode
Main weldering disc electrode below insulating layer fall off.
Detailed description of the invention
Fig. 1-11 is the structural schematic diagram of the semiconductor light-emitting elements of embodiment one.
Figure 12 is the structural schematic diagram of the semiconductor light-emitting elements of embodiment two.
Figure 13 is the structural schematic diagram of the semiconductor light-emitting elements of embodiment three.
Figure 14-17 is the schematic diagram of the encapsulating structure of example IV.
Specific embodiment
It is described in detail below with reference to structure of the schematic diagram to the semiconductor light-emitting elements of the utility model, into one
Step is introduced before the utility model, it should be understood that due to that can be transformed to specific embodiment, the utility model
It is not limited to following specific embodiments.It is also understood that since the scope of the utility model is only defined by the following claims,
Therefore embodiment used by is introductory, rather than restrictive.Unless otherwise stated, used herein of all
Technology and scientific words are identical as the meaning that those skilled in the art are commonly understood by.
Embodiment one
Fig. 1 is the schematic diagram of semiconductor light-emitting elements according to the embodiment.The semiconductor light-emitting elements of the present embodiment include:
Supporting substrate 101,101 1 surface side of supporting substrate include the metal layer stacked gradually, current barrier layer 105, partly lead from the bottom to top
Body light sequences, semiconductor light emitting sequence successively include the first conductive type semiconductor layer 106,107 and of luminescent layer from the bottom to top
Second Type conductive semiconductor layer 108, a front electrode 109 be located at the top of second conductive type semiconductor layer 107 and with
Electric connection.
Wherein the supporting substrate 101 can be electric conductivity, non-conductive substrate, light-transmitting substrate or thermal diffusivity base
Plate, conductive board are silicon, silicon carbide, metal substrate, and metal substrate is preferably copper, tungsten, molybdenum base plate；Non-conductive substrate can be with
It is aluminium nitride, sapphire substrate etc.；Radiating substrate is the high ceramic substrate of rate of heat dissipation, such as aluminium nitride.Supporting substrate 101 can
With the thickness with about 50 μm to about 300 μm.
Metal layer is divided by function can be for single layer or at least two layers, more preferably at least two one functional layers, wherein
At least one layer can be defined as metal bonding layer 102 according to function；The metal bonding layer 102 glues semiconductor light emitting sequence side
It is attached on supporting substrate 101, metal bonding layer 102 generallys use such as gold, tin, titanium, nickel, platinum metal, the bonding metal layer sheet
Body can be multilayer material combination.The upside of metal bonding layer 102 can also be included in metal layer and closer to semiconductor light emitting
The reflecting layer 103 of sequence, reflecting layer 103 can be by comprising in Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and Hf
The metal or alloy of at least one formed.The reflecting layer 103 can reflective semiconductor light sequences towards supporting substrate 101
The light of side radiation is back to semiconductor light emitting sequence, and radiate from light emission side.Reflecting layer 103 and metal bonding layer
It can also include metal barrier (not shown) between 102, the effect of metal barrier is to prevent the metal in reflecting layer from expanding
It is dissipated to bonding metal layer side, influences reflecting effect, the material of metal barrier can be the barrier metals material such as titanium, platinum, chromium.
Current barrier layer 105 has opening 1051 in multiple regions.Opening 1051 uniformly or non-uniformly be distributed in half
The side of conductor light sequences.The opening 1051 that the current barrier layer 105 of circle circled portion has as shown in figure 1.Current blocking
Layer 105 by having the insulating material of the electric conductivity less than reflecting layer 103 or ohmic contact layer 104, with low electric conductivity
The material of the first conductive type semiconductor layer of material or Schottky contacts is formed.For example, current barrier layer 105 can be by fluorine
At least one compound, nitride or oxide etc. composition, it is specific such as ZnO, SiO2、SiOx、SiOxNy、Si3N4、Al2O3、
At least one such as TiOx, MgF or GaF.Current barrier layer 105 is at least one layer of or multilayer different refractivity current barrier layer material
Material combination is formed, and the current barrier layer 105 is more preferably light transmission current barrier layer, and preferably at least 50% light energy
Enough pass through the current barrier layer.It is furthermore preferred that the refractive index of the current barrier layer is lower than the refraction of semiconductor light emitting sequence
Rate is 2.0 hereinafter, more preferably 1.5 or less.
May include ohmic contact layer 104 between metallic reflector 103 and current barrier layer 105, ohmic contact layer 104 to
The multiple openings for filling current barrier layer 105 less form multiple positions and are in electrical contact the first conductive type semiconductor layer 106.Ohm connects
Contact layer 104 is not contact 106 side of the first conductive type semiconductor layer in the form of entire, by electric power in semiconductor light emitting
It is uniformly transferred in sequence.Ohmic contact layer 104 can be by transparency conducting layer such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO
And at least one of ATO formation.Ohmic contact layer 104 can also alternatively use metal.The metal preferably closes
Golden material, such as golden zinc, gold germanium, gold germanium nickel or golden beryllium material, ohmic contact layer 104 can have single layer or multilayer.
Wherein semiconductor light emitting sequence is made of predominantly three-five compound-material, and semiconductor light emitting sequence includes first
Conductive type semiconductor layer 106, luminescent layer 107 and second conductive type semiconductor layer 108；The wherein first kind and Second Type
It is meant that different conductivity-types, may respectively be n-type doping or p-type doping, realize different conduction types, and at least distinguish
Electronics or hole are provided.N-type doping semiconductor layer can be doped with the n-type dopant of such as Si, Ge or Sn, p-type doping
Semiconductor layer can be doped with the p-type dopant of such as Mg, Zn, Ca, Sr or Ba.First conductive type semiconductor layer
106, luminescent layer 107, second conductive type semiconductor layer 108 specifically can be Al-Ca-In-N, gallium nitride, aluminum gallium nitride, aluminium indium phosphorus,
The materials such as AlGaInP or GaAs or aluminum gallium arsenide make to be formed.First conductive type semiconductor layer 106 or the second conduction type
It is included at least in semiconductor layer 108 and the coating of electronics or hole is provided, and may include other layers such as current extending, window
Mouth layer or ohmic contact layer etc., are configured according to doping concentration or constituent content difference as different multilayers.Luminescent layer is to mention
Supplied for electronic and hole-recombination provide the region of light radiation, and different materials, luminescent layer 107 may be selected according to the difference of emission wavelength
The usually periodic structure of single quantum well or multiple quantum wells.Luminescent layer be capable of providing it is conventional such as ultraviolet, blue light, it is green, yellow,
The radiation such as red, infrared light, the specific can be that 200 ~ 950nm radiation wave band, such as common nitride can be mixed such as gallium nitride base
The elements such as miscellaneous aluminium, indium mainly provide the radiation of 200 ~ 550nm wave band；Or common AlGaInP-based or gallium aluminium arsyl shines
Layer, provides the radiation of 550 ~ 950nm wave band.
Front electrode 109 is first electrode, is disposed in the light emission side of semiconductor light emitting sequence.Front electrode 109 is main
To include main electrode portion, main electrode execute the routing of wire bonding at which, main electrode mainly include for the second conduction
Type semiconductor layer forms the wiring layers 1092 on the ohmic contact layer 1091 and ohmic contact layer of Ohmic contact, the wiring layers
1092 surface is for outside routing when encapsulating.The wiring layers 1092 of front electrode 109 can need to set according to actual routing
Different shapes, specifically column or taper platform are counted into, the specific can be that at least one bottom surface, section or top surface are polygon
Shape or round or ellipse or polygon.As a preferred embodiment, front electrode 109 can also include from main electricity
The extending electrode 1093 that pole extends.The structural schematic diagram that slave front electrode side as shown in Figure 2 is overlooked, the extending electrode 1093
It shape can be formed in a predetermined pattern, usually the strip of multiple and different extending directions.
Part of the current barrier layer 105 immediately below front electrode main weldering disc electrode does not have opening, i.e. ohmic contact layer
104 do not form Ohmic contact immediately below front electrode main weldering disc electrode.Thus it designs, can reduce to the greatest extent and hang down from main weldering disc electrode
The current segment of semiconductor light emitting sequence is directly flowed through downwards, increases the current segment of horizontal proliferation as far as possible, promotes light distribution
Uniformity.
The semiconductor light-emitting elements further include opposite electrode 100, and opposite electrode 100 is second electrode, the present embodiment
Described in opposite electrode 100 be formed in 101 back side of supporting substrate in the form of entire, the supporting substrate of the present embodiment is to lead
Electrical supporting substrate, front electrode 109 and opposite electrode 100 are formed in two surface sides of supporting substrate.
Front electrode 109 and opposite electrode 100 are preferably that metal material is made.The metal material is multilayer, just
The ohmic contact layer 1091 and extending electrode 1093 of the main electrode of face electrode 109 are usually identical material, include at least gold germanium
Nickel or golden beryllium or golden zinc or gold germanium, wiring layers 1092 at least have component part identical with the material of external routing, with benefit
When routing metal alloying formed with outside routing connect, specific wiring layers 1092 generally include Au, Ag, Al or Cu or they
At least one of combined material.
As shown in figure 3, the patterned process of roughening treatment or rule for improving light extraction efficiency can be disposed in
On the top surface of Second Type conductive semiconductor layer 108.Wherein the main weldering disc electrode of the front electrode 109 and extension
The lower surface of electrode is smooth, be not roughened or rule patterned process.
Passivation layer 110 can be disposed at least one side surface of semiconductor light emitting sequence.Moreover, passivation layer 110
It can also be disposed on the top surface of Second Type conductive semiconductor layer.Passivation layer 110 is configured to electrically protect half
Conductor light sequences.
Hereinafter, it will describe the manufacturing method of luminescent device in detail, it will omit duplicate with previous embodiment
It explains.
Fig. 4 to Fig. 8 is the view for showing the manufacturing process of luminescent device according to the embodiment.
As shown in figure 4, preparing semiconductor light emitting sequence.Semiconductor light emitting sequence is formed in growth substrates 201.Growth lining
It bottom 201 can be by sapphire (Al2O3), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge and Ga2O3At least one of
It is formed, but not limited to this.Semiconductor light emitting sequence includes that second conductive type semiconductor layer 108, luminescent layer 107 and first are led
Electric type semiconductor layer 106.In order to guarantee epitaxial growth quality, buffer layer is made, or usually in growth substrates in order to subsequent
Growth substrates are removed, excessive layer, etching cut-off layer etc. can be made in growth substrates.In the present embodiment, growth substrates 201 are
Gallium arsenide substrate, wherein second conductive type semiconductor layer 108, luminescent layer 107 and the first conductive type semiconductor layer 106 are aluminium
Indium phosphorus, AlGaInP, aluminum gallium arsenide and GaAs material any combination multilayer material, emission wavelength be feux rouges or infrared.
As illustrated in figures 4-5, dielectric layer 105, ohmic contact layer 104, reflecting layer 103 are made.It is heavy using vapor deposition, electron beam
At least one of product technique, sputtering plating, electroplating technology and plasma enhanced chemical vapor deposition technique can form electricity
Dielectric layer, ohmic contact layer and reflecting layer.
As shown in fig. 6, preparation conductive supporting substrate 101.Use metal bonding layer 102 as adhesive layer by conductive supporting base
Plate 101 adheres to the surface of semiconductor light emitting sequence shown in 5 in figure.Although high temperature bonding can be used in the present example
Technique couples conductive supporting substrate by bonded layer, but plating or depositing operation formation conductive supporting substrate can be used.
Remove growth substrates 201.The structure that Fig. 7 shows wherein Fig. 6 spins upside down structure that is rear and removing growth substrates, raw
Long substrate can choose the removal of the distinct methods such as grinding, wet etching or laser lift-off according to material difference.The present embodiment uses
Grinding, wet etching remove gallium arsenide substrate, expose the surface of second conductive type semiconductor layer 108.
As shown in figure 8, production ohmic contact layer 1091 and extending electrode 1092 are in second conductive type semiconductor layer 108
Surface, wherein ohmic contact layer 1091 be certain area bulk, extending electrode 1093 along around ohmic contact layer 1091
The surface of second conductive type semiconductor layer 108 extends out, and extends close to edge side.The ohmic contact layer with
Face between first conductive type semiconductor layer is burnishing surface.In order to which ohmic contact layer 1091 and extending electrode 1093 are led with second
The surface of electric type semiconductor layer 108 forms good Ohmic contact, and the second conductive type semiconductor layer 108 can wrap
Include extension ohmic contact layer 1081 such as GaAs or the gallium phosphide of doping, 1081 property of can choose of extension ohmic contact layer
It is only remained in the part below extending electrode, rest part is etched removal, to prevent the extinction effect of this layer.
The ohmic contact layer 1091 and extending electrode 1093 is gold germanium nickel in the present embodiment, and described second is conductive
Type semiconductor luminescent layer is n-type doping.
As shown in figure 9, wiring layers 1092 are formed on ohmic contact layer 1091, wiring layers 1092 and ohmic contact layer 1091
Overlapping area should be less than area coverage of the ohmic contact layer 1091 in semiconductor light emitting sequence.Form rear electrode 100
In the back side of supporting substrate 101.
Wiring layers 1092 as shown in Figure 10 have the bottom surface contacted with ohmic contact layer and surface side, surface tool
There are side and top surfaces, there are 2 steps on side, step makes wiring layers 1092 from bottom to top surface there is sectional area gradually to subtract
Small trend, top surface are platform plane.
In order to obtain step, the wiring layers of a bottom can be made first, then by repeatedly opening light mask image, exposure bottom
The marginal portion of the partial region on surface, preferably bottom is covered by photoresist, and makes the wiring layers of remaining multilayer sectional area reduction,
Edge is consequently formed with step, top surface is the wiring layers of table top.The maximum gauge of top surface is preferably the maximum gauge of bottom surface
50%.The 30% of the preferred accounting core particles light-emitting surface area of the area of the bottom surface of wiring layers, the preferred accounting light-emitting surface of the area of top surface
Core particles area 15%.Rear electrode 100 is made to survey at the back side of substrate 101.
As shown in figure 11, the surface of the second conductive type semiconductor layer 108 of exposing is roughened or patterned process is with benefit
In light out.
Semiconductor light emitting sequence is separated into unit die area by chip separation process, and forms passivation layer 110
At least in the side wall and light emission side of semiconductor light emitting sequence, then separated by subsequent cutting technique to be formed it is independent multiple
Chip.
The step design of wiring layers surface side can promote the dispersion lateral in wiring layers of routing power, and it is vertical to weaken routing power
It is transmitted on the insulating layer on the downside of semiconductor light emitting sequence downwards, to avoid below the main weldering disc electrode of first electrode
Insulating layer falls off.
Embodiment two
As a kind of alternative of embodiment one, wiring layers 1092 as shown in figure 12 have a bottom, and bottom has
One bottom surface, bottom surface are located on ohmic contact layer 1091, and the bottom of wiring layers 1092 has a surface, and surface includes side and top
Face has multiple independent columns or taper platform structure on top surface.It is described it is multiple be at least two.Wiring layers surface side is set
Counting multiple figures can promote the dispersion lateral in wiring layers of routing power, weaken routing power vertical downward transportation to semiconductor light emitting
On insulating layer on the downside of sequence, so that the insulating layer below the main weldering disc electrode of first electrode be avoided to fall off.The thickness of bottom
Degree is at least not less than the thickness of figure, the horizontal area of the area of the bottom surface of bottom and multiple independent columns or taper platform structure
Ratio is at most 2.
Embodiment three
As a kind of alternative of embodiment one or two, wiring layers 1092, have a bottom surface, bottom as shown in fig. 13 that
Face faces ohmic contact layer side, has a surface, and surface includes top surface and side, have on side multiple step structures and
There is multiple columns or taper platform, multiple steps are at least 2, and step makes wiring layers 1092 from bottom surface side to top surface side on top surface
With the trend that sectional area is gradually reduced, top surface is at least two or multiple independent columns or taper platform structure.Independent column
At least one bottom surface and top surface of shape structure or taper platform are round, ellipse or polygon, such as rectangular or hexagon.
Wiring layers surface side, which is designed multiple figures, adds step to can promote the dispersion lateral in wiring layers of routing power, weakens
On insulating layer on the downside of routing power vertical downward transportation to semiconductor light emitting sequence, to avoid the main weldering disk positioned at first electrode
The insulating layer of base part falls off.
Example IV
The present embodiment provides the encapsulating structure for the semiconductor light-emitting elements for including embodiment one, longitdinal cross-section diagram such as Figure 14
It is shown.It include: package main body 10, first electrode layer 20 and the second electricity according to the encapsulation of embodiment semiconductor luminous element packing structure
Pole layer 30, the first electrode layer 20 and the second electrode lay 30 are disposed in package main body 10；Semiconductor light-emitting elements 40, should be partly
Conductor light-emitting component 40 is disposed in package main body 10 and is electrically coupled to the first and second electrode layers 20 and 30；Encapsulation
Resin 60, the potting resin 60 surround and cover semiconductor light-emitting elements 40, the first and second electrode layers 20 and 30.
Package main body 10 can choose to be formed by ceramics, synthetic resin material or metal material at least one or combination.
Package main body 10 can have cavity, and the bottom of cavity has first electrode layer 20 and the second electrode lay 30, and the bottom of cavity
For installing semiconductor light-emitting elements, which has inclined side surfaces in portion.
First electrode layer 20 and the second electrode lay 30 are mutually electrically decoupled, and provide electricity to semiconductor light-emitting elements
Power.Moreover, first electrode layer 20 and the second electrode lay 30 can reflect the light generated in semiconductor light-emitting elements to improve light
Efficiency.In addition, the heat generated in semiconductor light-emitting elements 40 can be discharged into outside by first electrode layer 20 and the second electrode lay 30
Portion.
The substrate for including, the electrode of semiconductor light-emitting elements 40 can be disposed in package main body 10 or first electrode layer
20 or the second electrode lay 30 on.
Semiconductor light-emitting elements described in installation diagram 11 are shown in Figure 15.In the present example, semiconductor is sent out
Optical element 40 forms wiring 50 by external routing and is electrically coupled to first electrode layer 20.Moreover, semiconductor light-emitting elements 40
The second electrode lay 30 is directly contacted by viscous glutinous agent 300 and is electrically coupled to the second electrode lay 30.Potting resin 60 can
To surround semiconductor light-emitting elements 40 to protect semiconductor light-emitting elements 40.Moreover, fluorophor can be contained in potting resin
Change the wavelength of the light emitted from luminescent device 100 in 60.
As shown in figure 16, wherein one end 501 of wiring 50 is usually sphere, the routing of the present embodiment semiconductor light-emitting elements
The material of layer 1092 includes ingredient identical with metal wire one end 501.And sphere is covered on wiring layers by the formation of routing power
In 1092 top surface side and table top.
Wiring layers 1092 shown in Figure 17 are the structural schematic diagram that body structure surface shown in embodiment two carries out routing.Wherein
One end 501 of wiring 50 passes through the effect of routing power, forms the surface for being covered on the bottom of wiring layers 1092 and column structure
Surface and side.
The design that bottom adds step or bottom to add column structure can effectively lateral dispersion routing power, reduction routing power hang down
It is directly transmitted to downwards on the insulating layer on the downside of semiconductor light emitting sequence, so that insulating layer be avoided to fall off.
One or more can be arranged on circuit base plate according to the semiconductor luminous element packing structure of the present embodiment, and
And the optical component of such as light guide plate, prismatic lens, diffusion sheet and flourescent sheet can be disposed in from light emitting device package and emit
Light path on.Light emitting device package, substrate and optical component may be used as back light unit or lighting unit.For example,
Lighting system may include back light unit, lighting unit, indicator unit, lamp, street lamp etc..
The above embodiments are only illustrative of the principle and efficacy of the utility model, and not for limitation, this is practical new
Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model
All equivalent modifications or change completed under mind and technical idea, should be covered by the claim of the utility model.
Claims (16)
1. a kind of semiconductor light-emitting elements comprising on the first conductive type semiconductor layer, the first conductive type semiconductor layer
First electrode, first electrode include the main weldering disc electrode for external routing, and main weldering disc electrode includes and the first conduction type half
The ohmic contact layer and wiring layers of conductor layer contact；
Luminescent layer and second conductive type semiconductor layer on the downside of first conductive type semiconductor layer；
There is current barrier layer on the downside of the second conductive type semiconductor layer of main weldering disc electrode vertical lower；
There is second electrode, it is characterised in that: the surface of the wiring layers forms well-regulated height on the downside of current barrier layer
Difference, the face between the ohmic contact layer and the first conductive type semiconductor layer are burnishing surface.
2. semiconductor light-emitting elements according to claim 1, it is characterised in that: the well-regulated height in the surface of the wiring layers
Low difference is generated by multiple step structures and/or multiple figures.
3. semiconductor light-emitting elements according to claim 2, it is characterised in that: multiple step structures make wiring layers
Top surface horizontal area from bottom surface to surface is gradually reduced, and top surface horizontal area is at least the half of bottom surface horizontal area.
4. semiconductor light-emitting elements according to claim 3, it is characterised in that: the top surface of the surface side of the wiring layers is
Plane is non-planar.
5. semiconductor light-emitting elements according to claim 4, it is characterised in that: the wiring layers with a thickness of 1-2um.
6. semiconductor light-emitting elements according to claim 2, it is characterised in that: the wiring layers are on bottom and bottom
Multiple regular figures combine to be formed.
7. semiconductor light-emitting elements according to claim 6, it is characterised in that: multiple regular figures be square or
The column or taper platform or cylinder or cylindroid of polygon.
8. semiconductor light-emitting elements according to claim 1, it is characterised in that: the second electrode and the second conductive-type
At least there is ohmic contact layer, metallic reflector or electrically-conductive backing plate between type semiconductor layer.
9. semiconductor light-emitting elements according to claim 1, it is characterised in that: the current barrier layer be oxide or
Nitride or fluoride.
10. semiconductor light-emitting elements according to claim 8, it is characterised in that: the ohmic contact layer is metal group
Close object or transparency conducting layer.
11. semiconductor light-emitting elements according to claim 1, it is characterised in that: the wiring layers include Au, Ag, Al
Or at least one of Cu or the material of their combinations.
12. a kind of semiconductor light-emitting elements according to claim 1, it is characterised in that: first conduction type half
Conductor layer, luminescent layer and second conductive type semiconductor layer be respectively AlxInyGa1-x-yP (0≤x≤1,0≤y≤1) and/or
The material of AlzGa1-zAs (0≤z≤1) is made.
13. a kind of semiconductor light-emitting elements according to claim 1, it is characterised in that: include multiple on current barrier layer
The through hole of exposure second conductive type semiconductor layer side, current barrier layer through hole are not located at below main weldering disc electrode.
14. a kind of packaging body of semiconductor light-emitting elements, it is characterised in that: including first electrode, second electrode and claim
The semiconductor light-emitting elements of any one of 1-13, the first electrode of packaging body pass through metal wire and semiconductor light-emitting elements the
The connection of one electrode, the second electrode of packaging body and the second electrode of semiconductor light-emitting elements connect.
15. the packaging body of semiconductor light-emitting elements according to claim 14, it is characterised in that: the semiconductor light emitting
The wiring layers of the first electrode of element include ingredient identical with metal wire ingredient.
16. a kind of light emitting device, the packaging body of the semiconductor light-emitting elements including claim 14-15 any one and support
The bracket of packaging body.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112420891A (en) * | 2020-09-21 | 2021-02-26 | 厦门士兰明镓化合物半导体有限公司 | Light emitting diode chip and manufacturing method thereof |
| WO2021129405A1 (en) * | 2019-12-23 | 2021-07-01 | 天津三安光电有限公司 | Semiconductor light-emitting element |
| WO2022257061A1 (en) * | 2021-06-10 | 2022-12-15 | 天津三安光电有限公司 | Light emitting diode and manufacturing method |
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2019
- 2019-05-08 CN CN201920651244.4U patent/CN209626251U/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2021129405A1 (en) * | 2019-12-23 | 2021-07-01 | 天津三安光电有限公司 | Semiconductor light-emitting element |
| CN112420891A (en) * | 2020-09-21 | 2021-02-26 | 厦门士兰明镓化合物半导体有限公司 | Light emitting diode chip and manufacturing method thereof |
| CN112420891B (en) * | 2020-09-21 | 2022-09-09 | 厦门士兰明镓化合物半导体有限公司 | Light emitting diode chip and manufacturing method thereof |
| WO2022257061A1 (en) * | 2021-06-10 | 2022-12-15 | 天津三安光电有限公司 | Light emitting diode and manufacturing method |
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